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Fabrication of quantum emitters in aluminium nitride by Al-ion implantation and thermal annealing
Authors:
E. Nieto Hernández,
H. B. Yağcı,
V. Pugliese,
P. Aprà,
J. K. Cannon,
S. G. Bishop,
J. Hadden,
S. Ditalia Tchernij,
Olivero,
A. J. Bennett,
J. Forneris
Abstract:
Single-photon emitters (SPEs) within wide-bandgap materials represent an appealing platform for the development of single-photon sources operating at room temperatures. Group III- nitrides have previously been shown to host efficient SPEs which are attributed to deep energy levels within the large bandgap of the material, in a way that is similar to extensively investigated colour centres in diamo…
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Single-photon emitters (SPEs) within wide-bandgap materials represent an appealing platform for the development of single-photon sources operating at room temperatures. Group III- nitrides have previously been shown to host efficient SPEs which are attributed to deep energy levels within the large bandgap of the material, in a way that is similar to extensively investigated colour centres in diamond. Anti-bunched emission from defect centres within gallium nitride (GaN) and aluminium nitride (AlN) have been recently demonstrated. While such emitters are particularly interesting due to the compatibility of III-nitrides with cleanroom processes, the nature of such defects and the optimal conditions for forming them are not fully understood. Here, we investigate Al implantation on a commercial AlN epilayer through subsequent steps of thermal annealing and confocal microscopy measurements. We observe a fluence-dependent increase in the density of the emitters, resulting in creation of ensembles at the maximum implantation fluence. Annealing at 600 °C results in the optimal yield in SPEs formation at the maximum fluence, while a significant reduction in SPE density is observed at lower fluences. These findings suggest that the mechanism of vacancy formation plays a key role in the creation of the emitters, and open new perspectives in the defect engineering of SPEs in solid state.
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Submitted 31 October, 2023;
originally announced October 2023.
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Evanescent-field assisted photon collection from quantum emitters under a solid immersion lens
Authors:
S G Bishop,
J K Cannon,
H B Yagci,
R N Clark,
J P Hadden,
W Langbein,
A J Bennett
Abstract:
Solid-state quantum light sources are being intensively investigated for applications in quantum technology. A key challenge is to extract light from host materials with high refractive index, where efficiency is limited by refraction and total internal reflection. Here we show that an index-matched solid immersion lens can, if placed sufficiently close to the semiconductor, extract light coupled…
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Solid-state quantum light sources are being intensively investigated for applications in quantum technology. A key challenge is to extract light from host materials with high refractive index, where efficiency is limited by refraction and total internal reflection. Here we show that an index-matched solid immersion lens can, if placed sufficiently close to the semiconductor, extract light coupled through the evanescent field at the surface. Using both numerical simulations and experiments, we investigate how changing the thickness of the spacer between the semiconductor and lens impacts the collection efficiency (CE). Using automatic selection and measurement of 100 s of individually addressable colour centres in several aluminium nitride samples we demonstrate spacer-thickness dependent photon CE enhancement, with a mean enhancement factor of 4.2 and a highest measured photon detection rate of 743 kcps.
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Submitted 10 October, 2023;
originally announced October 2023.
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Polarization study of single color centers in aluminum nitride
Authors:
J. K. Cannon,
S. G. Bishop,
J. P. Hadden,
H. B. Yagci,
A. J. Bennett
Abstract:
Color centers in wide-bandgap semiconductors are a promising class of solid-state quantum light source, many of which operate at room temperature. We examine a family of color centers in aluminum nitride, which emits close to 620 nm. We present a technique to rapidly map an ensemble of these single photon emitters, identifying all emitters, not just those with absorption dipole parallel to the las…
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Color centers in wide-bandgap semiconductors are a promising class of solid-state quantum light source, many of which operate at room temperature. We examine a family of color centers in aluminum nitride, which emits close to 620 nm. We present a technique to rapidly map an ensemble of these single photon emitters, identifying all emitters, not just those with absorption dipole parallel to the laser polarization. We demonstrate a fast technique to determine their absorption polarization orientation in the c-plane, finding they are uniformly distributed in orientation, in contrast to many other emitters in crystalline materials.
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Submitted 10 October, 2023;
originally announced October 2023.
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Ultrahigh Green and Red Optical Gain Cross-sections from Solutions of Colloidal Quantum Well Heterostructures
Authors:
Savas Delikanli,
Onur Erdem,
Furkan Isik,
Hameed Dehghanpour Baruj,
Farzan Shabani,
Huseyin Bilge Yagci,
Hilmi Volkan Demir
Abstract:
Optical gain in solution, which provides high photostability as a result of continuous regeneration of the gain medium, is extremely attractive for optoelectronic applications. Here, we propose and demonstrate amplified spontaneous emission (ASE) in solution with ultralow thresholds of 30 mikroJ/cm2 in red and of 44 mikroJ/cm2 in green from engineered colloidal quantum well (CQW) heterostructures.…
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Optical gain in solution, which provides high photostability as a result of continuous regeneration of the gain medium, is extremely attractive for optoelectronic applications. Here, we propose and demonstrate amplified spontaneous emission (ASE) in solution with ultralow thresholds of 30 mikroJ/cm2 in red and of 44 mikroJ/cm2 in green from engineered colloidal quantum well (CQW) heterostructures. For this purpose, CdSe/CdS core/crown CQWs, designed to hit the green region, and CdSe/CdS/CdxZn1-xS core/crown/gradient-alloyed shell CQWs, further tuned to reach the red region by shell alloying, were employed to achieve high-performance ASE in the visible. The net modal gain of these CQWs reaches 530 cm-1 for the green and 201 cm-1 for the red, two orders of magnitude larger than those of colloidal quantum dots (QDs) in solution owing to intrinsically larger gain cross-sections of these CQWs. To explain the root cause for ultrahigh gain coefficient in solution, we show that for the first time that the gain cross-sections of these CQWs is 3.3x10-14 cm2 in the green and 1.3x10-14 cm2 in the red which are two orders magnitude larger compared to those of CQDs. These findings confirm the extraordinary prospects of these solution-processed CQWs as solution-based optical gain media in lasing applications.
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Submitted 16 December, 2020;
originally announced December 2020.
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'Meta-atomless' architecture based on an irregular continuous fabric of coupling-tuned identical nanopillars enables highly efficient and achromatic metasurfaces
Authors:
Hüseyin Bilge Yağcı,
Hilmi Volkan Demir
Abstract:
Metasurfaces are subwavelength-thick constructs, consisting of discrete meta-atoms, providing discretized levels of phase accumulation that collectively approximate a designed optical functionality. The meta-atoms utilizing geometric phase with polarization-converting structures produced encouraging implementations of optical components including metalenses. However, to date, a pending and fundame…
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Metasurfaces are subwavelength-thick constructs, consisting of discrete meta-atoms, providing discretized levels of phase accumulation that collectively approximate a designed optical functionality. The meta-atoms utilizing geometric phase with polarization-converting structures produced encouraging implementations of optical components including metalenses. However, to date, a pending and fundamental problem of this approach has been the low device efficiency that such resulting components suffer, an unwanted side effect of large lattice constants used for preventing inter-coupling of their meta-atoms. Although the use of near-field coupling for tuning electromagnetic resonances found its use in constructing efficient narrow-band designs, such structures fell short of providing high efficiency over a broad spectrum. Here, we propose and show that tightly packed fabric of identical dielectric nanopillar waveguides with continuously-tuned inter-coupling distances make excellent and complete achromatic metasurface elements. This architecture enables the scatterers to interact with the incoming wave extremely efficiently. As a proof-of-concept demonstration, we showed an achromatic cylindrical metalens, constructed from strongly coupled dielectric nanopillars of a single geometry as continuously-set phase elements in a 'meta-atomless' fashion, working in the entirety of 400-700 nm band. This metalens achieves over 85 percent focusing efficiency across this whole spectral range. To combat polarization sensitivity, we used hexagonally stacked nanopillars to build up a polarization-independent scatterer library. Finally, a circular metalens with polarization-independent operation and achromatic focusing was obtained. This is a paradigm shift in making an achromatic metasurface architecture by wovening identical nanopillars coupled into an irregular lattice constructed via careful tuning.
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Submitted 21 February, 2021; v1 submitted 11 December, 2020;
originally announced December 2020.
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Single-mode lasing from a single 7 nm thick monolayer of colloidal quantum wells in a monolithic microcavity
Authors:
Sina Foroutan-Barenji,
Onur Erdem,
Savas Delikanli,
Huseyin Bilge Yagci,
Negar Gheshlaghi,
Yemliha Altintas,
Hilmi Volkan Demir
Abstract:
In this work, we report the first account of monolithically-fabricated vertical cavity surface emitting lasers (VCSELs) of densely-packed, orientation-controlled, atomically flat colloidal quantum wells (CQWs) using a self-assembly method and demonstrate single-mode lasing from a record thin colloidal gain medium with a film thickness of 7 nm under femtosecond optical excitation. We used specially…
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In this work, we report the first account of monolithically-fabricated vertical cavity surface emitting lasers (VCSELs) of densely-packed, orientation-controlled, atomically flat colloidal quantum wells (CQWs) using a self-assembly method and demonstrate single-mode lasing from a record thin colloidal gain medium with a film thickness of 7 nm under femtosecond optical excitation. We used specially engineered CQWs to demonstrate these hybrid CQW-VCSELs consisting of only a few layers to a single monolayer of CQWs and achieved the lasing from these thin gain media by thoroughly modeling and implementing a vertical cavity consisting of distributed Bragg reflectors with an additional dielectric layer for mode tuning. Accurate spectral and spatial alignment of the cavity mode with the CQW films was secured with the help of full electromagnetic computations. While overcoming the long-pending problem of limited electrical conductivity in thicker colloidal films, such ultra-thin colloidal gain media can help enabling fully electrically-driven colloidal lasers.
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Submitted 16 October, 2020;
originally announced October 2020.
