Showing 1–12 of 12 results for author: Yüksel, İ E

An Experimental Characterization of Combined RowHammer and RowPress Read Disturbance in Modern DRAM Chips

Authors: Haocong Luo, Ismail Emir Yüksel, Ataberk Olgun, A. Giray Yağlıkçı, Mohammad Sadrosadati, Onur Mutlu

Abstract: DRAM read disturbance can break memory isolation, a fundamental property to ensure system robustness (i.e., reliability, security, safety). RowHammer and RowPress are two different DRAM read disturbance phenomena. RowHammer induces bitflips in physically adjacent victim DRAM rows by repeatedly opening and closing an aggressor DRAM row, while RowPress induces bitflips by kee** an aggressor DRAM r… ▽ More DRAM read disturbance can break memory isolation, a fundamental property to ensure system robustness (i.e., reliability, security, safety). RowHammer and RowPress are two different DRAM read disturbance phenomena. RowHammer induces bitflips in physically adjacent victim DRAM rows by repeatedly opening and closing an aggressor DRAM row, while RowPress induces bitflips by kee** an aggressor DRAM row open for a long period of time. In this study, we characterize a DRAM access pattern that combines RowHammer and RowPress in 84 real DDR4 DRAM chips from all three major DRAM manufacturers. Our key results show that 1) this combined RowHammer and RowPress pattern takes significantly smaller amount of time (up to 46.1% faster) to induce the first bitflip compared to the state-of-the-art RowPress pattern, and 2) at the minimum aggressor row activation count to induce at least one bitflip, the bits that flip are different across RowHammer, RowPress, and the combined patterns. Based on our results, we provide a key hypothesis that the read disturbance effect caused by RowPress from one of the two aggressor rows in a double-sided pattern is much more significant than the other. △ Less

Submitted 21 June, 2024; v1 submitted 18 June, 2024; originally announced June 2024.

Comments: To appear at DSN Disrupt 2024 (June 2024)

Simultaneous Many-Row Activation in Off-the-Shelf DRAM Chips: Experimental Characterization and Analysis

Authors: Ismail Emir Yuksel, Yahya Can Tugrul, F. Nisa Bostanci, Geraldo F. Oliveira, A. Giray Yaglikci, Ataberk Olgun, Melina Soysal, Haocong Luo, Juan Gómez-Luna, Mohammad Sadrosadati, Onur Mutlu

Abstract: We experimentally analyze the computational capability of commercial off-the-shelf (COTS) DRAM chips and the robustness of these capabilities under various timing delays between DRAM commands, data patterns, temperature, and voltage levels. We extensively characterize 120 COTS DDR4 chips from two major manufacturers. We highlight four key results of our study. First, COTS DRAM chips are capable of… ▽ More We experimentally analyze the computational capability of commercial off-the-shelf (COTS) DRAM chips and the robustness of these capabilities under various timing delays between DRAM commands, data patterns, temperature, and voltage levels. We extensively characterize 120 COTS DDR4 chips from two major manufacturers. We highlight four key results of our study. First, COTS DRAM chips are capable of 1) simultaneously activating up to 32 rows (i.e., simultaneous many-row activation), 2) executing a majority of X (MAJX) operation where X>3 (i.e., MAJ5, MAJ7, and MAJ9 operations), and 3) copying a DRAM row (concurrently) to up to 31 other DRAM rows, which we call Multi-RowCopy. Second, storing multiple copies of MAJX's input operands on all simultaneously activated rows drastically increases the success rate (i.e., the percentage of DRAM cells that correctly perform the computation) of the MAJX operation. For example, MAJ3 with 32-row activation (i.e., replicating each MAJ3's input operands 10 times) has a 30.81% higher average success rate than MAJ3 with 4-row activation (i.e., no replication). Third, data pattern affects the success rate of MAJX and Multi-RowCopy operations by 11.52% and 0.07% on average. Fourth, simultaneous many-row activation, MAJX, and Multi-RowCopy operations are highly resilient to temperature and voltage changes, with small success rate variations of at most 2.13% among all tested operations. We believe these empirical results demonstrate the promising potential of using DRAM as a computation substrate. To aid future research and development, we open-source our infrastructure at https://github.com/CMU-SAFARI/SiMRA-DRAM. △ Less

Submitted 9 May, 2024; originally announced May 2024.

Comments: To appear in DSN 2024

Leveraging Adversarial Detection to Enable Scalable and Low Overhead RowHammer Mitigations

Authors: Oğuzhan Canpolat, A. Giray Yağlıkçı, Ataberk Olgun, İsmail Emir Yüksel, Yahya Can Tuğrul, Konstantinos Kanellopoulos, Oğuz Ergin, Onur Mutlu

Abstract: RowHammer is a prime example of read disturbance in DRAM where repeatedly accessing (hammering) a row of DRAM cells (DRAM row) induces bitflips in other physically nearby DRAM rows. RowHammer solutions perform preventive actions (e.g., refresh neighbor rows of the hammered row) that mitigate such bitflips to preserve memory isolation, a fundamental building block of security and privacy in modern… ▽ More RowHammer is a prime example of read disturbance in DRAM where repeatedly accessing (hammering) a row of DRAM cells (DRAM row) induces bitflips in other physically nearby DRAM rows. RowHammer solutions perform preventive actions (e.g., refresh neighbor rows of the hammered row) that mitigate such bitflips to preserve memory isolation, a fundamental building block of security and privacy in modern computing systems. However, preventive actions induce non-negligible memory request latency and system performance overheads as they interfere with memory requests in the memory controller. As shrinking technology node size over DRAM chip generations exacerbates RowHammer, the overheads of RowHammer solutions become prohibitively large. As a result, a malicious program can effectively hog the memory system and deny service to benign applications by causing many RowHammer preventive actions. In this work, we tackle the performance overheads of RowHammer solutions by tracking the generators of memory accesses that trigger RowHammer solutions. To this end, we propose BreakHammer. BreakHammer cooperates with existing RowHammer solutions to identify hardware threads that trigger preventive actions. To do so, BreakHammer estimates the RowHammer likelihood of a thread, based on how frequently it triggers RowHammer preventive actions. BreakHammer limits the number of on-the-fly requests a thread can inject into the memory system based on the thread's RowHammer likelihood. By doing so, BreakHammer significantly reduces the number of performed counter-measures, improves the system performance by an average (maximum) of 48.7% (105.5%), and reduces the maximum slowdown induced on a benign application by 14.6% with near-zero area overhead (e.g., 0.0002% of a highend processor's chip area). △ Less

Submitted 20 April, 2024; originally announced April 2024.

Amplifying Main Memory-Based Timing Covert and Side Channels using Processing-in-Memory Operations

Authors: Konstantinos Kanellopoulos, F. Nisa Bostanci, Ataberk Olgun, A. Giray Yaglikci, Ismail Emir Yuksel, Nika Mansouri Ghiasi, Zulal Bingol, Mohammad Sadrosadati, Onur Mutlu

Abstract: The adoption of processing-in-memory (PiM) architectures has been gaining momentum because they provide high performance and low energy consumption by alleviating the data movement bottleneck. Yet, the security of such architectures has not been thoroughly explored. The adoption of PiM solutions provides a new way to directly access main memory, which can be potentially exploited by malicious user… ▽ More The adoption of processing-in-memory (PiM) architectures has been gaining momentum because they provide high performance and low energy consumption by alleviating the data movement bottleneck. Yet, the security of such architectures has not been thoroughly explored. The adoption of PiM solutions provides a new way to directly access main memory, which can be potentially exploited by malicious user applications. We show that this new way to access main memory opens opportunities for high-throughput timing attack vectors that are hard-to-mitigate without significant performance overhead. We introduce IMPACT, a set of high-throughput main memory-based timing attacks that leverage characteristics of PiM architectures to establish covert and side channels. IMPACT enables high-throughput communication and private information leakage. To achieve this, IMPACT (i) eliminates expensive cache bypassing steps required by processor-centric main memory and cache-based timing attacks and (ii) leverages the intrinsic parallelism of PiM operations. First, we showcase two covert-channel attack variants that run on the host CPU and leverage PiM architectures to gain direct and fast access to main memory and establish high-throughput communication covert channels. Second, we showcase a side-channel attack on a DNA sequence analysis application that leaks the private characteristics of a user's sample genome by leveraging PiM operations. Our results demonstrate that (i) our covert channels achieve up to 14.16 Mb/s communication throughput, which is 6.38x faster than the state-of-the-art main memory-based covert channels, and (ii) our side-channel attack allows the attacker to determine the properties of a sample genome at a throughput of 7.5 Mb/s with 96% accuracy. We discuss and evaluate several countermeasures for IMPACT to enable secure and robust PiM architectures. △ Less

Submitted 22 April, 2024; v1 submitted 17 April, 2024; originally announced April 2024.

CoMeT: Count-Min-Sketch-based Row Tracking to Mitigate RowHammer at Low Cost

Authors: F. Nisa Bostanci, Ismail Emir Yuksel, Ataberk Olgun, Konstantinos Kanellopoulos, Yahya Can Tugrul, A. Giray Yaglikci, Mohammad Sadrosadati, Onur Mutlu

Abstract: We propose a new RowHammer mitigation mechanism, CoMeT, that prevents RowHammer bitflips with low area, performance, and energy costs in DRAM-based systems at very low RowHammer thresholds. The key idea of CoMeT is to use low-cost and scalable hash-based counters to track DRAM row activations. CoMeT uses the Count-Min Sketch technique that maps each DRAM row to a group of counters, as uniquely as… ▽ More We propose a new RowHammer mitigation mechanism, CoMeT, that prevents RowHammer bitflips with low area, performance, and energy costs in DRAM-based systems at very low RowHammer thresholds. The key idea of CoMeT is to use low-cost and scalable hash-based counters to track DRAM row activations. CoMeT uses the Count-Min Sketch technique that maps each DRAM row to a group of counters, as uniquely as possible, using multiple hash functions. When a DRAM row is activated, CoMeT increments the counters mapped to that DRAM row. Because the map** from DRAM rows to counters is not completely unique, activating one row can increment one or more counters mapped to another row. Thus, CoMeT may overestimate, but never underestimates, a DRAM row's activation count. This property of CoMeT allows it to securely prevent RowHammer bitflips while properly configuring its hash functions reduces overestimations. As a result, CoMeT 1) implements substantially fewer counters than the number of DRAM rows in a DRAM bank and 2) does not significantly overestimate a DRAM row's activation count. Our comprehensive evaluations show that CoMeT prevents RowHammer bitflips with an average performance overhead of only 4.01% across 61 benign single-core workloads for a very low RowHammer threshold of 125, normalized to a system with no RowHammer mitigation. CoMeT achieves a good trade-off between performance, energy, and area overheads. Compared to the best-performing state-of-the-art mitigation, CoMeT requires 74.2x less area overhead at the RowHammer threshold 125 and incurs a small performance overhead on average for all RowHammer thresholds. Compared to the best-performing low-area-cost mechanism, at a very low RowHammer threshold of 125, CoMeT improves performance by up to 39.1% while incurring a similar area overhead. CoMeT is openly and freely available at https://github.com/CMU-SAFARI/CoMeT. △ Less

Submitted 28 February, 2024; originally announced February 2024.

Comments: To appear at HPCA 2024

Functionally-Complete Boolean Logic in Real DRAM Chips: Experimental Characterization and Analysis

Authors: Ismail Emir Yuksel, Yahya Can Tugrul, Ataberk Olgun, F. Nisa Bostanci, A. Giray Yaglikci, Geraldo F. Oliveira, Haocong Luo, Juan Gómez-Luna, Mohammad Sadrosadati, Onur Mutlu

Abstract: Processing-using-DRAM (PuD) is an emerging paradigm that leverages the analog operational properties of DRAM circuitry to enable massively parallel in-DRAM computation. PuD has the potential to reduce or eliminate costly data movement between processing elements and main memory. Prior works experimentally demonstrate three-input MAJ (MAJ3) and two-input AND and OR operations in commercial off-the-… ▽ More Processing-using-DRAM (PuD) is an emerging paradigm that leverages the analog operational properties of DRAM circuitry to enable massively parallel in-DRAM computation. PuD has the potential to reduce or eliminate costly data movement between processing elements and main memory. Prior works experimentally demonstrate three-input MAJ (MAJ3) and two-input AND and OR operations in commercial off-the-shelf (COTS) DRAM chips. Yet, demonstrations on COTS DRAM chips do not provide a functionally complete set of operations. We experimentally demonstrate that COTS DRAM chips are capable of performing 1) functionally-complete Boolean operations: NOT, NAND, and NOR and 2) many-input (i.e., more than two-input) AND and OR operations. We present an extensive characterization of new bulk bitwise operations in 256 off-the-shelf modern DDR4 DRAM chips. We evaluate the reliability of these operations using a metric called success rate: the fraction of correctly performed bitwise operations. Among our 19 new observations, we highlight four major results. First, we can perform the NOT operation on COTS DRAM chips with a 98.37% success rate on average. Second, we can perform up to 16-input NAND, NOR, AND, and OR operations on COTS DRAM chips with high reliability (e.g., 16-input NAND, NOR, AND, and OR with an average success rate of 94.94%, 95.87%, 94.94%, and 95.85%, respectively). Third, data pattern only slightly affects bitwise operations. Our results show that executing NAND, NOR, AND, and OR operations with random data patterns decreases the success rate compared to all logic-1/logic-0 patterns by 1.39%, 1.97%, 1.43%, and 1.98%, respectively. Fourth, bitwise operations are highly resilient to temperature changes, with small success rate fluctuations of at most 1.66% when the temperature is increased from 50C to 95C. We open-source our infrastructure at https://github.com/CMU-SAFARI/FCDRAM △ Less

Submitted 21 April, 2024; v1 submitted 28 February, 2024; originally announced February 2024.

Comments: A shorter version of this work is to appear at the 30th IEEE International Symposium on High-Performance Computer Architecture (HPCA-30), 2024

Spatial Variation-Aware Read Disturbance Defenses: Experimental Analysis of Real DRAM Chips and Implications on Future Solutions

Authors: Abdullah Giray Yağlıkçı, Yahya Can Tuğrul, Geraldo F. Oliveira, İsmail Emir Yüksel, Ataberk Olgun, Haocong Luo, Onur Mutlu

Abstract: Read disturbance in modern DRAM chips is a widespread phenomenon and is reliably used for breaking memory isolation, a fundamental building block for building robust systems. RowHammer and RowPress are two examples of read disturbance in DRAM where repeatedly accessing (hammering) or kee** active (pressing) a memory location induces bitflips in other memory locations. Unfortunately, shrinking te… ▽ More Read disturbance in modern DRAM chips is a widespread phenomenon and is reliably used for breaking memory isolation, a fundamental building block for building robust systems. RowHammer and RowPress are two examples of read disturbance in DRAM where repeatedly accessing (hammering) or kee** active (pressing) a memory location induces bitflips in other memory locations. Unfortunately, shrinking technology node size exacerbates read disturbance in DRAM chips over generations. As a result, existing defense mechanisms suffer from significant performance and energy overheads, limited effectiveness, or prohibitively high hardware complexity. In this paper, we tackle these shortcomings by leveraging the spatial variation in read disturbance across different memory locations in real DRAM chips. To do so, we 1) present the first rigorous real DRAM chip characterization study of spatial variation of read disturbance and 2) propose Svärd, a new mechanism that dynamically adapts the aggressiveness of existing solutions based on the row-level read disturbance profile. Our experimental characterization on 144 real DDR4 DRAM chips representing 10 chip designs demonstrates a large variation in read disturbance vulnerability across different memory locations: in the part of memory with the worst read disturbance vulnerability, 1) up to 2x the number of bitflips can occur and 2) bitflips can occur at an order of magnitude fewer accesses, compared to the memory locations with the least vulnerability to read disturbance. Svärd leverages this variation to reduce the overheads of five state-of-the-art read disturbance solutions, and thus significantly increases system performance. △ Less

Submitted 28 February, 2024; originally announced February 2024.

Comments: A shorter version of this work is to appear at the 30th IEEE International Symposium on High-Performance Computer Architecture (HPCA-30), 2024

PULSAR: Simultaneous Many-Row Activation for Reliable and High-Performance Computing in Off-the-Shelf DRAM Chips

Authors: Ismail Emir Yuksel, Yahya Can Tugrul, F. Nisa Bostanci, Abdullah Giray Yaglikci, Ataberk Olgun, Geraldo F. Oliveira, Melina Soysal, Haocong Luo, Juan Gomez Luna, Mohammad Sadrosadati, Onur Mutlu

Abstract: Data movement between the processor and the main memory is a first-order obstacle against improving performance and energy efficiency in modern systems. To address this obstacle, Processing-using-Memory (PuM) is a promising approach where bulk-bitwise operations are performed leveraging intrinsic analog properties within the DRAM array and massive parallelism across DRAM columns. Unfortunately, 1)… ▽ More Data movement between the processor and the main memory is a first-order obstacle against improving performance and energy efficiency in modern systems. To address this obstacle, Processing-using-Memory (PuM) is a promising approach where bulk-bitwise operations are performed leveraging intrinsic analog properties within the DRAM array and massive parallelism across DRAM columns. Unfortunately, 1) modern off-the-shelf DRAM chips do not officially support PuM operations, and 2) existing techniques of performing PuM operations on off-the-shelf DRAM chips suffer from two key limitations. First, these techniques have low success rates, i.e., only a small fraction of DRAM columns can correctly execute PuM operations because they operate beyond manufacturer-recommended timing constraints, causing these operations to be highly susceptible to noise and process variation. Second, these techniques have limited compute primitives, preventing them from fully leveraging parallelism across DRAM columns and thus hindering their performance benefits. We propose PULSAR, a new technique to enable high-success-rate and high-performance PuM operations in off-the-shelf DRAM chips. PULSAR leverages our new observation that a carefully crafted sequence of DRAM commands simultaneously activates up to 32 DRAM rows. PULSAR overcomes the limitations of existing techniques by 1) replicating the input data to improve the success rate and 2) enabling new bulk bitwise operations (e.g., many-input majority, Multi-RowInit, and Bulk-Write) to improve the performance. Our analysis on 120 off-the-shelf DDR4 chips from two major manufacturers shows that PULSAR achieves a 24.18% higher success rate and 121% higher performance over seven arithmetic-logic operations compared to FracDRAM, a state-of-the-art off-the-shelf DRAM-based PuM technique. △ Less

Submitted 18 March, 2024; v1 submitted 5 December, 2023; originally announced December 2023.

ABACuS: All-Bank Activation Counters for Scalable and Low Overhead RowHammer Mitigation

Authors: Ataberk Olgun, Yahya Can Tugrul, Nisa Bostanci, Ismail Emir Yuksel, Haocong Luo, Steve Rhyner, Abdullah Giray Yaglikci, Geraldo F. Oliveira, Onur Mutlu

Abstract: We introduce ABACuS, a new low-cost hardware-counter-based RowHammer mitigation technique that performance-, energy-, and area-efficiently scales with worsening RowHammer vulnerability. We observe that both benign workloads and RowHammer attacks tend to access DRAM rows with the same row address in multiple DRAM banks at around the same time. Based on this observation, ABACuS's key idea is to use… ▽ More We introduce ABACuS, a new low-cost hardware-counter-based RowHammer mitigation technique that performance-, energy-, and area-efficiently scales with worsening RowHammer vulnerability. We observe that both benign workloads and RowHammer attacks tend to access DRAM rows with the same row address in multiple DRAM banks at around the same time. Based on this observation, ABACuS's key idea is to use a single shared row activation counter to track activations to the rows with the same row address in all DRAM banks. Unlike state-of-the-art RowHammer mitigation mechanisms that implement a separate row activation counter for each DRAM bank, ABACuS implements fewer counters (e.g., only one) to track an equal number of aggressor rows. Our evaluations show that ABACuS securely prevents RowHammer bitflips at low performance/energy overhead and low area cost. We compare ABACuS to four state-of-the-art mitigation mechanisms. At a near-future RowHammer threshold of 1000, ABACuS incurs only 0.58% (0.77%) performance and 1.66% (2.12%) DRAM energy overheads, averaged across 62 single-core (8-core) workloads, requiring only 9.47 KiB of storage per DRAM rank. At the RowHammer threshold of 1000, the best prior low-area-cost mitigation mechanism incurs 1.80% higher average performance overhead than ABACuS, while ABACuS requires 2.50X smaller chip area to implement. At a future RowHammer threshold of 125, ABACuS performs very similarly to (within 0.38% of the performance of) the best prior performance- and energy-efficient RowHammer mitigation mechanism while requiring 22.72X smaller chip area. ABACuS is freely and openly available at https://github.com/CMU-SAFARI/ABACuS. △ Less

Submitted 2 May, 2024; v1 submitted 15 October, 2023; originally announced October 2023.

Comments: To appear in USENIX Security '24

TuRaN: True Random Number Generation Using Supply Voltage Underscaling in SRAMs

Authors: İsmail Emir Yüksel, Ataberk Olgun, Behzad Salami, F. Nisa Bostancı, Yahya Can Tuğrul, A. Giray Yağlıkçı, Nika Mansouri Ghiasi, Onur Mutlu, Oğuz Ergin

Abstract: Prior works propose SRAM-based TRNGs that extract entropy from SRAM arrays. SRAM arrays are widely used in a majority of specialized or general-purpose chips that perform the computation to store data inside the chip. Thus, SRAM-based TRNGs present a low-cost alternative to dedicated hardware TRNGs. However, existing SRAM-based TRNGs suffer from 1) low TRNG throughput, 2) high energy consumption,… ▽ More Prior works propose SRAM-based TRNGs that extract entropy from SRAM arrays. SRAM arrays are widely used in a majority of specialized or general-purpose chips that perform the computation to store data inside the chip. Thus, SRAM-based TRNGs present a low-cost alternative to dedicated hardware TRNGs. However, existing SRAM-based TRNGs suffer from 1) low TRNG throughput, 2) high energy consumption, 3) high TRNG latency, and 4) the inability to generate true random numbers continuously, which limits the application space of SRAM-based TRNGs. Our goal in this paper is to design an SRAM-based TRNG that overcomes these four key limitations and thus, extends the application space of SRAM-based TRNGs. To this end, we propose TuRaN, a new high-throughput, energy-efficient, and low-latency SRAM-based TRNG that can sustain continuous operation. TuRaN leverages the key observation that accessing SRAM cells results in random access failures when the supply voltage is reduced below the manufacturer-recommended supply voltage. TuRaN generates random numbers at high throughput by repeatedly accessing SRAM cells with reduced supply voltage and post-processing the resulting random faults using the SHA-256 hash function. To demonstrate the feasibility of TuRaN, we conduct SPICE simulations on different process nodes and analyze the potential of access failure for use as an entropy source. We verify and support our simulation results by conducting real-world experiments on two commercial off-the-shelf FPGA boards. We evaluate the quality of the random numbers generated by TuRaN using the widely-adopted NIST standard randomness tests and observe that TuRaN passes all tests. TuRaN generates true random numbers with (i) an average (maximum) throughput of 1.6Gbps (1.812Gbps), (ii) 0.11nJ/bit energy consumption, and (iii) 278.46us latency. △ Less

Submitted 20 November, 2022; originally announced November 2022.

MoRS: An Approximate Fault Modelling Framework for Reduced-Voltage SRAMs

Authors: İsmail Emir Yüksel, Behzad Salami, Oğuz Ergin, Osman Sabri Ünsal, Adrian Cristal Kestelman

Abstract: On-chip memory (usually based on Static RAMs-SRAMs) are crucial components for various computing devices including heterogeneous devices, e.g., GPUs, FPGAs, ASICs to achieve high performance. Modern workloads such as Deep Neural Networks (DNNs) running on these heterogeneous fabrics are highly dependent on the on-chip memory architecture for efficient acceleration. Hence, improving the energy-effi… ▽ More On-chip memory (usually based on Static RAMs-SRAMs) are crucial components for various computing devices including heterogeneous devices, e.g., GPUs, FPGAs, ASICs to achieve high performance. Modern workloads such as Deep Neural Networks (DNNs) running on these heterogeneous fabrics are highly dependent on the on-chip memory architecture for efficient acceleration. Hence, improving the energy-efficiency of such memories directly leads to an efficient system. One of the common methods to save energy is undervolting i.e., supply voltage underscaling below the nominal level. Such systems can be safely undervolted without incurring faults down to a certain voltage limit. This safe range is also called voltage guardband. However, reducing voltage below the guardband level without decreasing frequency causes timing-based faults. In this paper, we propose MoRS, a framework that generates the first approximate undervolting fault model using real faults extracted from experimental undervolting studies on SRAMs to build the model. We inject the faults generated by MoRS into the on-chip memory of the DNN accelerator to evaluate the resilience of the system under the test. MoRS has the advantage of simplicity without any need for high-time overhead experiments while being accurate enough in comparison to a fully randomly-generated fault injection approach. We evaluate our experiment in popular DNN workloads by map** weights to SRAMs and measure the accuracy difference between the output of the MoRS and the real data. Our results show that the maximum difference between real fault data and the output fault model of MoRS is 6.21%, whereas the maximum difference between real data and random fault injection model is 23.2%. In terms of average proximity to the real data, the output of MoRS outperforms the random fault injection approach by 3.21x. △ Less

Submitted 19 July, 2022; v1 submitted 12 October, 2021; originally announced October 2021.

Comments: 13 pages, 10 figures. This work appears at the Transactions on Computer-Aided Design of Integrated Circuits and Systems: SI on Compiler Frameworks and Co-design Methodologies

An Experimental Study of Reduced-Voltage Operation in Modern FPGAs for Neural Network Acceleration

Authors: Behzad Salami, Erhan Baturay Onural, Ismail Emir Yuksel, Fahrettin Koc, Oguz Ergin, Adrian Cristal Kestelman, Osman S. Unsal, Hamid Sarbazi-Azad, Onur Mutlu

Abstract: We empirically evaluate an undervolting technique, i.e., underscaling the circuit supply voltage below the nominal level, to improve the power-efficiency of Convolutional Neural Network (CNN) accelerators mapped to Field Programmable Gate Arrays (FPGAs). Undervolting below a safe voltage level can lead to timing faults due to excessive circuit latency increase. We evaluate the reliability-power tr… ▽ More We empirically evaluate an undervolting technique, i.e., underscaling the circuit supply voltage below the nominal level, to improve the power-efficiency of Convolutional Neural Network (CNN) accelerators mapped to Field Programmable Gate Arrays (FPGAs). Undervolting below a safe voltage level can lead to timing faults due to excessive circuit latency increase. We evaluate the reliability-power trade-off for such accelerators. Specifically, we experimentally study the reduced-voltage operation of multiple components of real FPGAs, characterize the corresponding reliability behavior of CNN accelerators, propose techniques to minimize the drawbacks of reduced-voltage operation, and combine undervolting with architectural CNN optimization techniques, i.e., quantization and pruning. We investigate the effect of environmental temperature on the reliability-power trade-off of such accelerators. We perform experiments on three identical samples of modern Xilinx ZCU102 FPGA platforms with five state-of-the-art image classification CNN benchmarks. This approach allows us to study the effects of our undervolting technique for both software and hardware variability. We achieve more than 3X power-efficiency (GOPs/W) gain via undervolting. 2.6X of this gain is the result of eliminating the voltage guardband region, i.e., the safe voltage region below the nominal level that is set by FPGA vendor to ensure correct functionality in worst-case environmental and circuit conditions. 43% of the power-efficiency gain is due to further undervolting below the guardband, which comes at the cost of accuracy loss in the CNN accelerator. We evaluate an effective frequency underscaling technique that prevents this accuracy loss, and find that it reduces the power-efficiency gain from 43% to 25%. △ Less

Submitted 30 December, 2020; v1 submitted 4 May, 2020; originally announced May 2020.

Comments: To appear at the DSN 2020 conference