Kondo scattering in underdoped Nd1-xSrxNiO2 infinite-layer superconducting thin films
Authors:
T. N. Shao,
Z. T. Zhang,
Y. J. Qiao,
Q. Zhao,
H. W. Liu,
X. X. Chen,
W. M. Jiang,
C. L. Yao,
X. Y. Chen,
M. H. Chen,
R. F. Dou,
C. M. Xiong,
G. M. Zhang,
Y. -F. Yang,
J. C. Nie
Abstract:
The recent discovery of superconductivity in infinite-layer nickelates generates tremendous research endeavors, but the ground state of their parent compounds is still under debate. Here, we report experimental evidences for the dominant role of Kondo scattering in the underdoped Nd1-xSrxNiO2 thin films. A resistivity minimum associated with logarithmic temperature dependence in both longitudinal…
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The recent discovery of superconductivity in infinite-layer nickelates generates tremendous research endeavors, but the ground state of their parent compounds is still under debate. Here, we report experimental evidences for the dominant role of Kondo scattering in the underdoped Nd1-xSrxNiO2 thin films. A resistivity minimum associated with logarithmic temperature dependence in both longitudinal and Hall resistivities are observed in the underdoped Nd1-xSrxNiO2 samples before the superconducting transition. A linear scaling behavior $σ_{xy}^{AHE}\simσ_{xx}$ between anomalous Hall conductivity $σ_{xy}^{AHE}$ and conductivity $σ_{xx}$ is revealed, verifying the dominant Kondo scattering at low temperature. The effect of weak (anti-)localization is found to be secondary. Our experiments can help clarifying the basic physics in the underdoped Nd1-xSrxNiO2 infinite-layer thin films.
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Submitted 13 September, 2022;
originally announced September 2022.
Magnetic domain-wall motion twisted by nanoscale probe-induced spin transfer
Authors:
J. Wang,
L. S. Xie,
C. S. Wang,
H. Z. Zhang,
L. Shu,
J. Bai,
Y. S. Chai,
X. Zhao,
J. C. Nie,
C. B. Cao,
C. Z. Gu,
C. M. Xiong,
Y. Sun,
J. Shi,
S. Salahuddin,
K. Xia,
C. W. Nan,
J. X. Zhang
Abstract:
A method for deterministic control of the magnetic order parameter using an electrical stimulus is highly desired for the new generation of spintronic and magnetoelectronic devices. Much effort has been focused on magnetic domain-wall motion manipulated by a successive injection of spin-polarized current into a magnetic nanostructure. However, an integrant high-threshold current density of 107~108…
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A method for deterministic control of the magnetic order parameter using an electrical stimulus is highly desired for the new generation of spintronic and magnetoelectronic devices. Much effort has been focused on magnetic domain-wall motion manipulated by a successive injection of spin-polarized current into a magnetic nanostructure. However, an integrant high-threshold current density of 107~108 A/cm2 inhibits the integration of those nanostructures with low-energy-cost technology. In addition, a precise determination of the location of domain walls at nanoscale seems difficult in artificially manufactured nanostructures. Here we report an approach to manipulate a single magnetic domain wall with a perpendicular anisotropy in a manganite/dielectric/metal capacitor using a probe-induced spin displacement. A spin angular momentum transfer torque occurs in the strongly correlated manganite film during the spin injection into the capacitor from the nanoscale magnetized tip with an ultralow voltage of 0.1 V, where the threshold spin-polarized current density is ~104 A/cm2 at the tip/manganite interface. The probe-voltage-controlled domain wall motion in the capacitor demonstrates a critical framework for the fundamental understanding of the manipulation of the nano-magnet systems with low energy consumption.
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Submitted 10 July, 2014;
originally announced July 2014.
