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Nature of excitons in PPDT2FBT: PCBM solar cell: Role played by PCBM
Authors:
Subhamoy Sahoo,
Dhruvajyoti Barah,
Dinesh Kumar S,
Nithin Xavier,
Soumya Dutta,
Debdutta Ray,
Jayeeta Bhattacharyya
Abstract:
In organic semiconductor based bulk heterojunction solar cells, the presence of acceptor increases the formation of charge transfer (CT) excitons, thereby leading to higher exciton dissociation probabilities. In this work we used steady state EA measurements to probe the change in the nature of excitons as the blend composition of the solar cell active layer material is varied. We investigated ble…
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In organic semiconductor based bulk heterojunction solar cells, the presence of acceptor increases the formation of charge transfer (CT) excitons, thereby leading to higher exciton dissociation probabilities. In this work we used steady state EA measurements to probe the change in the nature of excitons as the blend composition of the solar cell active layer material is varied. We investigated blends of poly[(2,5-bis(2-hexyldecyloxy)phenylene)-alt-(5,6-difluoro-4,7-di(thiophen-2-yl)benzo[c]-[1,2,5]thiadiazole)] (PPDT2FBT) and (6,6)-Phenyl C71 butyric acid methyl ester (PCBM). Analysis of the EA spectra showed that in presence of fullerene based acceptor, like PCBM, CT characteristics of the excitons were modified, though, no new CT signature was observed in the blend. Enhancement in the CT characteristic in the blend was reflected in the photoluminescence (PL) measurements of the blends, where, PL quenching of $\sim$ 63\% was observed for 1\% PCBM. The quenching reaches saturation at about 20\% PCBM. However, the maximum efficiency of the devices was obtained for the blend having 50\% PCBM. Comparing experimental results with simulations, the variation of the device efficiency with PCBM percentage was shown to be arising from multiple factors like increase in polarizability and dipole moment of excitons, and the efficiency of the carrier collection from the bulk of the active layer.
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Submitted 11 July, 2022;
originally announced July 2022.
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Using Computer Vision to enhance Safety of Workforce in Manufacturing in a Post COVID World
Authors:
Prateek Khandelwal,
Anuj Khandelwal,
Snigdha Agarwal,
Deep Thomas,
Naveen Xavier,
Arun Raghuraman
Abstract:
The COVID-19 pandemic forced governments across the world to impose lockdowns to prevent virus transmissions. This resulted in the shutdown of all economic activity and accordingly the production at manufacturing plants across most sectors was halted. While there is an urgency to resume production, there is an even greater need to ensure the safety of the workforce at the plant site. Reports indic…
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The COVID-19 pandemic forced governments across the world to impose lockdowns to prevent virus transmissions. This resulted in the shutdown of all economic activity and accordingly the production at manufacturing plants across most sectors was halted. While there is an urgency to resume production, there is an even greater need to ensure the safety of the workforce at the plant site. Reports indicate that maintaining social distancing and wearing face masks while at work clearly reduces the risk of transmission. We decided to use computer vision on CCTV feeds to monitor worker activity and detect violations which trigger real time voice alerts on the shop floor. This paper describes an efficient and economic approach of using AI to create a safe environment in a manufacturing setup. We demonstrate our approach to build a robust social distancing measurement algorithm using a mix of modern-day deep learning and classic projective geometry techniques. We have deployed our solution at manufacturing plants across the Aditya Birla Group (ABG). We have also described our face mask detection approach which provides a high accuracy across a range of customized masks.
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Submitted 25 May, 2020; v1 submitted 11 May, 2020;
originally announced May 2020.
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Fracton-like phases from subsystem symmetries
Authors:
J. P. Ibieta-Jimenez,
L. N. Queiroz Xavier,
M. Petrucci,
P. Teotonio-Sobrinho
Abstract:
We study models with fracton-like order based on $\mathbb{Z}_2$ lattice gauge theories with subsystem symmetries in $d=2$ and $d=3$ spatial dimensions. The $3d$ model reduces to the $3$-dimensional Toric Code when subsystem symmetry is broken, giving an example of a subsystem symmetry enriched topological phase (SSET). Although not topologically protected, its ground state degeneracy has as leadin…
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We study models with fracton-like order based on $\mathbb{Z}_2$ lattice gauge theories with subsystem symmetries in $d=2$ and $d=3$ spatial dimensions. The $3d$ model reduces to the $3$-dimensional Toric Code when subsystem symmetry is broken, giving an example of a subsystem symmetry enriched topological phase (SSET). Although not topologically protected, its ground state degeneracy has as leading contribution a term which grows exponentially with the square of the linear size of the system. Also, there are completely mobile gauge charges living along with immobile fractons. Our method shows that fracton-like phases are also present in more usual lattice gauge theories. We calculate the entanglement entropy $S_A$ of these models in a sub-region $A$ of the lattice and show that it is equal to the logarithm of the ground state degeneracy of a particular restriction of the full model to $A$.
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Submitted 19 June, 2020; v1 submitted 20 August, 2019;
originally announced August 2019.
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Topological Entanglement Entropy in \(d\)-dimensions for Abelian Higher Gauge Theories
Authors:
J. P. Ibieta-Jimenez,
M. Petrucci,
L. N. Queiroz Xavier,
P. Teotonio-Sobrinho
Abstract:
We compute the topological entanglement entropy for a large set of lattice models in $d$-dimensions. It is well known that many such quantum systems can be constructed out of lattice gauge models. For dimensionality higher than two, there are generalizations going beyond gauge theories, which are called higher gauge theories and rely on higher-order generalizations of groups. Our main concern is a…
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We compute the topological entanglement entropy for a large set of lattice models in $d$-dimensions. It is well known that many such quantum systems can be constructed out of lattice gauge models. For dimensionality higher than two, there are generalizations going beyond gauge theories, which are called higher gauge theories and rely on higher-order generalizations of groups. Our main concern is a large class of $d$-dimensional quantum systems derived from Abelian higher gauge theories. In this paper, we derive a general formula for the bipartition entanglement entropy for this class of models, and from it we extract both the area law and the sub-leading terms, which explicitly depend on the topology of the entangling surface. We show that the entanglement entropy $S_A$ in a sub-region $A$ is proportional to $\log(GSD_{\tilde{A}})$, where \(GSD_{\tilde{A}}\) is the ground state degeneracy of a particular restriction of the full model to \(A\). The quantity $GSD_{\tilde{A}}$ can be further divided into a contribution that scales with the size of the boundary $\partial A$ and a term which depends on the topology of $\partial A$. There is also a topological contribution coming from $A$ itself, that may be non-zero when $A$ has a non-trivial homology. We present some examples and discuss how the topology of $A$ affects the topological entropy. Our formalism allows us to do most of the calculation for arbitrary dimension $d$. The result is in agreement with entanglement calculations for known topological models.
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Submitted 6 January, 2020; v1 submitted 2 July, 2019;
originally announced July 2019.
