Showing 1–8 of 8 results for author: Wyrick, J

Analog Quantum Simulator of a Quantum Field Theory with Fermion-Spin Systems in Silicon

Authors: Ali Rad, Alexander Schuckert, Eleanor Crane, Gautam Nambiar, Fan Fei, Jonathan Wyrick, Richard M. Silver, Mohammad Hafezi, Zohreh Davoudi, Michael J. Gullans

Abstract: Simulating fermions coupled to spin degrees of freedom, relevant for a range of quantum field theories, represents a promising application for quantum simulators. Map** fermions to qubits is challenging in $2+1$ and higher spacetime dimensions, and map** bosons demands substantial quantum-computational overhead. These features complicate the realization of mixed fermion-boson quantum systems i… ▽ More Simulating fermions coupled to spin degrees of freedom, relevant for a range of quantum field theories, represents a promising application for quantum simulators. Map** fermions to qubits is challenging in $2+1$ and higher spacetime dimensions, and map** bosons demands substantial quantum-computational overhead. These features complicate the realization of mixed fermion-boson quantum systems in digital quantum computers. We propose a native fermion-(large-)spin analog quantum simulator by utilizing dopant arrays in silicon. Specifically, we show how to use a dynamical lattice of coupled nuclear spins and conduction-band electrons to realize a quantum field theory: an extended Jackiw-Rebbi model involving coupled fermions and quantum rotors. We demonstrate the feasibility of observing dynamical mass generation and a confinement-deconfinement quantum phase transition in 1+1 dimensions on this platform, even in the presence of strong long-range Coulomb interactions. Furthermore, we employ finite-temperature Hartree-Fock-Bogoliubov simulations to investigate the dynamics of mass generation in two-dimensional square and honeycomb arrays, showing that this phenomenon can be simulated with realistic experimental parameters. Our findings reveal two distinct phases, and demonstrate robustness against the addition of Coulomb interactions. Finally, we discuss experimental signatures of the phases through transport and local charge sensing in dopant arrays. This study lays the foundation for quantum simulations of quantum field theories exhibiting fermions coupled to spin degrees of freedom using donors in silicon. △ Less

Submitted 3 July, 2024; originally announced July 2024.

Enhanced Atomic Precision Fabrication by Adsorption of Phosphine into Engineered Dangling Bonds on H-Si Using STM and DFT

Authors: Jonathan Wyrick, Xiqiao Wang, Pradeep Namboodiri, Ranjit V. Kashid, Fan Fei, Joseph Fox, Richard M. Silver

Abstract: Do** of Si using the scanning probe hydrogen depassivation lithography technique has been shown to enable placing and positioning small numbers of P atoms with nanometer accuracy. Several groups have now used this capability to build devices that exhibit desired quantum behavior determined by their atomistic details. What remains elusive, however, is the ability to control the precise number of… ▽ More Do** of Si using the scanning probe hydrogen depassivation lithography technique has been shown to enable placing and positioning small numbers of P atoms with nanometer accuracy. Several groups have now used this capability to build devices that exhibit desired quantum behavior determined by their atomistic details. What remains elusive, however, is the ability to control the precise number of atoms placed at a chosen site with 100% yield, thereby limiting the complexity and degree of perfection achievable. As an important step towards precise control of dopant number, we explore the adsorption of the P precursor molecule, phosphine, into atomically perfect dangling bond patches of intentionally varied size consisting of 3 adjacent Si dimers along a dimer row, 2 adjacent dimers, and 1 single dimer. Using low temperature scanning tunneling microscopy, we identify the adsorption products by generating and comparing to a catalog of simulated images, explore atomic manipulation after adsorption in select cases, and follow up with incorporation of P into the substrate. For 1-dimer patches we demonstrate that manipulation of the adsorbed species leads to single P incorporation in 12 out of 12 attempts. Based on the observations made in this study, we propose this 1-dimer patch method as a robust approach that can be used to fabricate devices where it is ensured that each site of interest has exactly one P atom. △ Less

Submitted 18 October, 2022; v1 submitted 22 December, 2021; originally announced December 2021.

Quantum Simulation of an Extended Fermi-Hubbard Model Using a 2D Lattice of Dopant-based Quantum Dots

Authors: Xiqiao Wang, Ehsan Khatami, Fan Fei, Jonathan Wyrick, Pradeep Namboodiri, Ranjit Kashid, Albert F. Rigosi, Garnett Bryant, Richard Silver

Abstract: The Hubbard model is one of the primary models for understanding the essential many-body physics in condensed matter systems such as Mott insulators and cuprate high-Tc superconductors. Recent advances in atomically precise fabrication in silicon using scanning tunneling microscopy (STM) have made possible atom-by-atom fabrication of single and few-dopant quantum dots and atomic-scale control of t… ▽ More The Hubbard model is one of the primary models for understanding the essential many-body physics in condensed matter systems such as Mott insulators and cuprate high-Tc superconductors. Recent advances in atomically precise fabrication in silicon using scanning tunneling microscopy (STM) have made possible atom-by-atom fabrication of single and few-dopant quantum dots and atomic-scale control of tunneling in dopant-based devices. However, the complex fabrication requirements of multi-component devices have meant that emulating two-dimensional (2D) Fermi-Hubbard physics using these systems has not been demonstrated. Here, we overcome these challenges by integrating the latest developments in atomic fabrication and demonstrate the analog quantum simulation of a 2D extended Fermi-Hubbard Hamiltonian using STM-fabricated 3x3 arrays of single/few-dopant quantum dots. We demonstrate low-temperature quantum transport and tuning of the electron ensemble using in-plane gates as efficient probes to characterize the many-body properties, such as charge addition, tunnel coupling, and the impact of disorder within the array. By controlling the array lattice constants with sub-nm precision, we demonstrate tuning of the hop** amplitude and long-range interactions and observe the finite-size analogue of a transition from Mott insulating to metallic behavior in the array. By increasing the measurement temperature, we simulate the effect of thermally activated hop** and Hubbard band formation in transport spectroscopy. We compare the analog quantum simulations with numerically simulated results to help understand the energy spectrum and resonant tunneling within the array. The results demonstrated in this study serve as a launching point for a new class of engineered artificial lattices to simulate the extended Fermi-Hubbard model of strongly correlated materials. △ Less

Submitted 17 October, 2021; originally announced October 2021.

Atomic-scale Control of Tunnel Coupling

Authors: Xiqiao Wang, Jonathan Wyrick, Ranjit V. Kashid, Pradeep Namboodiri, Scott W. Schmucker, Andrew Murphy, M. D. Stewart, Jr., Neil Zimmerman, Richard M. Silver

Abstract: Atomically precise donor-based quantum devices are a promising candidate for scalable solid-state quantum computing. Atomically precise design and implementation of the tunnel coupling in these devices is essential to realize gate-tunable exchange coupling, and electron spin initialization and readout. Current efforts in atomically precise lithography have enabled deterministic placement of single… ▽ More Atomically precise donor-based quantum devices are a promising candidate for scalable solid-state quantum computing. Atomically precise design and implementation of the tunnel coupling in these devices is essential to realize gate-tunable exchange coupling, and electron spin initialization and readout. Current efforts in atomically precise lithography have enabled deterministic placement of single dopant atoms into the Si lattice with sub-nm precision. However, critical challenges in atomically precise fabrication have meant systematic, atomic-scale control of the tunneling coupling has not been demonstrated. Here using a room-temperature grown locking layer and precise control over the entire atomic-scale fabrication process, we demonstrate atomic-scale control of the tunnel coupling in atomically precise single-electron transistors (SETs). Using the naturally occurring Si (100) 2x1 surface reconstruction lattice as an atomically-precise ruler, we systematically vary the number of lattice counts within the tunnel junction gaps and demonstrate exponential scaling of the tunneling resistance at the atomic limit. Using low-temperature transport measurements, we characterize the tunnel coupling asymmetry in a pair of nominally identical tunnel gaps that results from atomic-scale variation in the tunnel junction and show a resistance difference of four that corresponds to half a dimer row pitch difference in the effective tunnel gap distances - the intrinsic limit of hydrogen lithography precision on Si (100) 2x1 surfaces. Our results demonstrate the key capability to do atom-scale design and engineering of the tunnel coupling necessary for solid-state quantum computing and analog quantum simulation. △ Less

Submitted 26 July, 2019; v1 submitted 30 April, 2019; originally announced May 2019.

Quantifying Atom-scale Dopant Movement and Electrical Activation in Si:P Monolayers

Authors: Xiqiao Wang, Joseph A. Hagmann, Pradeep Namboodiri, Jonathan Wyrick, Kai Li, Roy E. Murray, Alline Myers, Frederick Misenkosen, M. D. Stewart, Jr., Curt A. Richter, Richard M. Silver

Abstract: Advanced hydrogen lithography techniques and low-temperature epitaxial overgrowth enable patterning of highly phosphorus-doped silicon (Si:P) monolayers (ML) with atomic precision. This approach to device fabrication has made Si:P monolayer systems a testbed for multiqubit quantum computing architectures and atomically precise 2-D superlattice designs whose behaviors are directly tied to the deter… ▽ More Advanced hydrogen lithography techniques and low-temperature epitaxial overgrowth enable patterning of highly phosphorus-doped silicon (Si:P) monolayers (ML) with atomic precision. This approach to device fabrication has made Si:P monolayer systems a testbed for multiqubit quantum computing architectures and atomically precise 2-D superlattice designs whose behaviors are directly tied to the deterministic placement of single dopants. However, dopant segregation, diffusion, surface roughening, and defect formation during the encapsulation overgrowth introduce large uncertainties to the exact dopant placement and activation ratio. In this study, we develop a unique method by combining dopant segregation/diffusion models with sputter profiling simulation to monitor and control, at the atomic scale, dopant movement using room-temperature grown locking layers (LL). We explore the impact of LL growth rate, thickness, rapid thermal anneal, surface accumulation, and growth front roughness on dopant confinement, local crystalline quality, and electrical activation within Si:P 2-D systems. We demonstrate that dopant movement can be more efficiently suppressed by increasing the LL growth rate than by increasing LL thickness. We find that the dopant segregation length can be suppressed below a single Si lattice constant by increasing LL growth rates at room temperature while maintaining epitaxy. Although dopant diffusivity within the LL is found to remain high even below the hydrogen desorption temperature, we demonstrate that exceptionally sharp dopant confinement with high electrical quality within Si:P monolayers can be achieved by combining a high LL growth rate with a low-temperature LL rapid thermal anneal. △ Less

Submitted 9 November, 2017; originally announced November 2017.

An On/Off Berry Phase Switch in Circular Graphene Resonators

Authors: Fereshte Ghahari, Daniel Walkup, Christopher Gutiérrez, Joaquin F. Rodriguez-Nieva, Yue Zhao, Jonathan Wyrick, Fabian D. Natterer, William G. Cullen, Kenji Watanabe, Takashi Taniguchi, Leonid S. Levitov, Nikolai B. Zhitenev, Joseph A. Stroscio

Abstract: The phase of a quantum state may not return to its original value after the system's parameters cycle around a closed path; instead, the wavefunction may acquire a measurable phase difference called the Berry phase. Berry phases typically have been accessed through interference experiments. Here, we demonstrate an unusual Berry-phase-induced spectroscopic feature: a sudden and large increase in th… ▽ More The phase of a quantum state may not return to its original value after the system's parameters cycle around a closed path; instead, the wavefunction may acquire a measurable phase difference called the Berry phase. Berry phases typically have been accessed through interference experiments. Here, we demonstrate an unusual Berry-phase-induced spectroscopic feature: a sudden and large increase in the energy of angular-momentum states in circular graphene p-n junction resonators when a small critical magnetic field is reached. This behavior results from turning on a $π$-Berry phase associated with the topological properties of Dirac fermions in graphene. The Berry phase can be switched on and off with small magnetic field changes on the order of 10 mT, potentially enabling a variety of optoelectronic graphene device applications. △ Less

Submitted 31 May, 2017; originally announced May 2017.

Journal ref: Science 356, 845-849 (2017)

Creating and Probing Electron Whispering Gallery Modes in Graphene

Authors: Yue Zhao, Jonathan Wyrick, Fabian D. Natterer, Joaquin Rodriguez-Nieva, Cyprian Lewandowski, Kenji Watanabe, Takashi Taniguchi, Leonid Levitov, Nikolai B. Zhitenev, Joseph A. Stroscio

Abstract: Designing high-finesse resonant cavities for electronic waves faces challenges due to short electron coherence lengths in solids. Previous approaches, e.g. the seminal nanometer-sized quantum corrals, depend on careful positioning of adatoms at clean surfaces. Here we demonstrate an entirely different approach, inspired by the peculiar acoustic phenomena in whispering galleries. Taking advantage o… ▽ More Designing high-finesse resonant cavities for electronic waves faces challenges due to short electron coherence lengths in solids. Previous approaches, e.g. the seminal nanometer-sized quantum corrals, depend on careful positioning of adatoms at clean surfaces. Here we demonstrate an entirely different approach, inspired by the peculiar acoustic phenomena in whispering galleries. Taking advantage of graphene's unique properties, namely gate-tunable light-like carriers, we create Whispering Gallery Mode (WGM) resonators defined by circular pn-junctions, induced by a scanning tunneling probe. We can tune the resonator size and the carrier concentration under the probe in a back-gated graphene device over a wide range, independently and in situ. The confined modes, revealed through characteristic resonances in the tunneling spectrum, originate from Klein scattering at pn junction boundaries. The WGM-type confinement and resonances are a new addition to the quantum electron-optics toolbox, paving the way to real-world electronic lenses and resonators. △ Less

Submitted 11 May, 2015; originally announced May 2015.

Journal ref: Science vol. 348, no. 6235, pp. 672-675, 2015

Quasiparticle scattering from topological crystalline insulator SnTe (001) surface states

Authors: Duming Zhang, Hongwoo Baek, Jeonghoon Ha, Tong Zhang, Jonathan E. Wyrick, Albert V. Davydov, Young Kuk, Joseph A. Stroscio

Abstract: Recently, the topological classification of electronic states has been extended to a new class of matter known as topological crystalline insulators. Similar to topological insulators, topological crystalline insulators also have spin-momentum locked surface states; but they only exist on specific crystal planes that are protected by crystal reflection symmetry. Here, we report an ultra-low temper… ▽ More Recently, the topological classification of electronic states has been extended to a new class of matter known as topological crystalline insulators. Similar to topological insulators, topological crystalline insulators also have spin-momentum locked surface states; but they only exist on specific crystal planes that are protected by crystal reflection symmetry. Here, we report an ultra-low temperature scanning tunneling microscopy and spectroscopy study on topological crystalline insulator SnTe nanoplates grown by molecular beam epitaxy. We observed quasiparticle interference patterns on the SnTe (001) surface that can be interpreted in terms of electron scattering from the four Fermi pockets of the topological crystalline insulator surface states in the first surface Brillouin zone. A quantitative analysis of the energy dispersion of the quasiparticle interference intensity shows two high energy features related to the crossing point beyond the Lifshitz transition when the two neighboring low energy surface bands near the point merge. A comparison between the experimental and computed quasiparticle interference patterns reveals possible spin texture of the surface states. △ Less

Submitted 5 May, 2014; originally announced May 2014.

Journal ref: Physical Review B 89, 245445 (2014)