-
High-purity and stable single-photon emission in bilayer WSe$_2$ via phonon-assisted excitation
Authors:
Claudia Piccinini,
Athanasios Paralikis,
José Ferreira Neto,
Abdulmalik Abdulkadir Madigawa,
Paweł Wyborski,
Vikas Remesh,
Luca Vannucci,
Niels Gregersen,
Battulga Munkhbat
Abstract:
The excitation scheme is essential for single-photon sources as it prepares the exciton state, defines the decay dynamics, and influences the spectral diffusion of the emitted single photons. Here, we investigate the impact of different optical excitation strategies on the single-photon emission characteristics of bilayer WSe$_2$ quantum emitters. Under phonon-assisted excitation, we achieve narro…
▽ More
The excitation scheme is essential for single-photon sources as it prepares the exciton state, defines the decay dynamics, and influences the spectral diffusion of the emitted single photons. Here, we investigate the impact of different optical excitation strategies on the single-photon emission characteristics of bilayer WSe$_2$ quantum emitters. Under phonon-assisted excitation, we achieve narrow and stable single-photon emission with an excellent purity reaching $ 0.94\pm 0.02\,$. Furthermore, the decay time is reduced by more than an order of magnitude from $(16.65 \pm 2.39)\,$ns for above-band excitation to $(1.33 \pm 0.04)\,$ns for phonon-assisted excitation. Finally, we observe a suppressed spectral wandering along with a two-fold reduction of the spectral linewidth. Our comprehensive investigation highlights the critical role of the excitation method in optimizing the performance of WSe$_2$-based quantum emitters.
△ Less
Submitted 11 June, 2024;
originally announced June 2024.
-
Impact of MBE-grown (In,Ga)As/GaAs metamorphic buffers on excitonic and optical properties of single quantum dots with single-photon emission tuned to the telecom range
Authors:
Paweł Wyborski,
Michał Gawełczyk,
Paweł Podemski,
Piotr Andrzej Wroński,
Mirosława Pawlyta,
Sandeep Gorantla,
Fauzia Jabeen,
Sven Höfling,
Grzegorz Sęk
Abstract:
Tuning GaAs-based quantum emitters to telecom wavelengths makes it possible to use the existing mature technology for applications in, e.g., long-haul ultra-secure communication in the fiber networks. A promising method re-developed recently is to use a metamorphic InGaAs buffer that redshifts the emission by reducing strain. However, the impact of such a buffer causes also a simultaneous modifica…
▽ More
Tuning GaAs-based quantum emitters to telecom wavelengths makes it possible to use the existing mature technology for applications in, e.g., long-haul ultra-secure communication in the fiber networks. A promising method re-developed recently is to use a metamorphic InGaAs buffer that redshifts the emission by reducing strain. However, the impact of such a buffer causes also a simultaneous modification of other quantum dot properties. Knowledge of these effects is crucial for actual implementations of QD-based non-classical light sources for quantum communication schemes. Here, we thoroughly study single GaAs-based quantum dots grown by molecular-beam epitaxy on specially designed, digital-alloy InGaAs metamorphic buffers. With a set of structures varying in the buffer indium content and providing quantum dot emission through the telecom spectral range up to 1.6 $μ$m, we analyze the impact of the buffer and its composition on QD structural and optical properties. We identify the mechanisms of quantum dot emission shift with varying buffer composition. We also look into the charge trap** processes and compare excitonic properties for different growth conditions with single-dot emission successfully shifted to both, the second and the third telecom windows.
△ Less
Submitted 26 November, 2023; v1 submitted 29 April, 2023;
originally announced May 2023.
-
Observation of room temperature excitons in an atomically thin topological insulator
Authors:
Marcin Syperek,
Raul Stühler,
Armando Consiglio,
Paweł Holewa,
Paweł Wyborski,
Łukasz Dusanowski,
Felix Reis,
Sven Höfling,
Ronny Thomale,
Werner Hanke,
Ralph Claessen,
Domenico Di Sante,
Christian Schneider
Abstract:
Optical spectroscopy of ultimately thin materials has significantly enhanced our understanding of collective excitations in low-dimensional semiconductors. This is particularly reflected by the rich physics of excitons in atomically thin crystals which uniquely arises from the interplay of strong Coulomb correlation, spin-orbit coupling (SOC), and lattice geometry. Here we extend the field by repo…
▽ More
Optical spectroscopy of ultimately thin materials has significantly enhanced our understanding of collective excitations in low-dimensional semiconductors. This is particularly reflected by the rich physics of excitons in atomically thin crystals which uniquely arises from the interplay of strong Coulomb correlation, spin-orbit coupling (SOC), and lattice geometry. Here we extend the field by reporting the observation of room temperature excitons in a material of non-trivial global topology. We study the fundamental optical excitation spectrum of a single layer of bismuth atoms epitaxially grown on a SiC substrate (hereafter bismuthene or Bi/SiC) which has been established as a large-gap, two-dimensional (2D) quantum spin Hall (QSH) insulator. Strongly developed optical resonances are observed to emerge around the direct gap at the K and K' points of the Brillouin zone, indicating the formation of bound excitons with considerable oscillator strength. These experimental findings are corroborated, concerning both the character of the excitonic resonances as well as their energy scale, by ab-initio \emph{GW} and Bethe-Salpeter equation calculations, confirming strong Coulomb interaction effects in these optical excitations. Our observations provide the first evidence of excitons in a 2D QSH insulator at room temperature, with excitonic and topological physics deriving from the very same electronic structure.
△ Less
Submitted 27 March, 2023; v1 submitted 13 September, 2022;
originally announced September 2022.
-
Excited states of neutral and charged excitons in single strongly asymmetric InP-based nanostructures emitting in the telecom C band
Authors:
M. Gawełczyk,
P. Wyborski,
P. Podemski,
J. P. Reithmaier,
S. Höfling,
G. Sęk
Abstract:
We investigate strongly asymmetric self-assembled nanostructures with one of dimensions reaching hundreds of nanometers. Close to the nanowire-like type of confinement, such objects are sometimes assigned as one-dimensional in nature. Here, we directly observe the spectrum of exciton excited states corresponding to longitudinal quantization. This is based on probing the optical transitions via pol…
▽ More
We investigate strongly asymmetric self-assembled nanostructures with one of dimensions reaching hundreds of nanometers. Close to the nanowire-like type of confinement, such objects are sometimes assigned as one-dimensional in nature. Here, we directly observe the spectrum of exciton excited states corresponding to longitudinal quantization. This is based on probing the optical transitions via polarization-resolved microphotoluminescence excitation ($μ$PLE) measurement performed on single nanostructures combined with theoretical calculation of neutral and charged exciton optical properties. We successfully probe absorption-like spectra for individual bright states forming the exciton ground-state fine structure, as well as for the negatively charged exciton. Confronting the calculated spectrum of excitonic absorption with $μ$PLE traces, we identify optical transitions involving states that contain carriers at various excited levels related to the longest dimension. Based on cross-polarized excitation-detection scheme, we show very well conserved spin configuration during orbital relaxation of the exciton from a number of excited states comparable to the quasi-resonant pum** via the optical phonon, and no polarization memory for the trion, as theoretically expected.
△ Less
Submitted 28 June, 2021;
originally announced June 2021.
-
InP-based single-photon sources operating at telecom C-band with increased extraction efficiency
Authors:
A. Musiał,
M. Mikulicz,
P. Mrowiński,
A. Zielińska,
P. Sitarek,
P. Wyborski,
M. Kuniej,
J. P. Reithmaier,
G. Sęk,
M. Benyoucef
Abstract:
In this work we demonstrate a triggered single-photon source operating at the telecom C-band with photon extraction efficiency exceeding any reported values in this range. The non-classical light emission with low probability of the multiphoton events is realized with single InAs quantum dots (QDs) grown by molecular beam epitaxy and embedded directly in an InP matrix. Low QD spatial density on th…
▽ More
In this work we demonstrate a triggered single-photon source operating at the telecom C-band with photon extraction efficiency exceeding any reported values in this range. The non-classical light emission with low probability of the multiphoton events is realized with single InAs quantum dots (QDs) grown by molecular beam epitaxy and embedded directly in an InP matrix. Low QD spatial density on the order of 5x108 cm-2 to ~2x109 cm-2 and symmetric shape of these nanostructures together with spectral range of emission makes them relevant for quantum communication applications. The engineering of extraction efficiency is realized by combining a bottom distributed Bragg reflector consisting of 25 pairs of InP/In0.53Ga0.37Al0.1As layers and cylindrical photonic confinement structures. Realization of such technologically non-demanding approach even in a non-deterministic fashion results in photon extraction efficiency of (13.3+/-2)% into 0.4 numerical aperture detection optics at approx. 1560 nm emission wavelength, i.e., close to the center of the telecom C-band.
△ Less
Submitted 31 January, 2021;
originally announced February 2021.
-
Optical and electronic properties of symmetric InAs/InGaAlAs/InP quantum dots formed by a ripening process in molecular beam epitaxy: a promising system for broad-range single-photon telecom emitters
Authors:
Paweł Holewa,
Michał Gawełczyk,
Aleksander Maryński,
Paweł Wyborski,
Johann Peter Reithmaier,
Grzegorz Sęk,
Mohamed Benyoucef,
Marcin Syperek
Abstract:
We present a detailed experimental optical study supported by theoretical modeling of InAs quantum dots (QDs) embedded in an InAlGaAs barrier lattice-matched to InP(001) grown with the use of a ripening step in molecular beam epitaxy. The method leads to the growth of in-plane symmetric QDs of low surface density, characterized by a multimodal size distribution resulting in a spectrally broad emis…
▽ More
We present a detailed experimental optical study supported by theoretical modeling of InAs quantum dots (QDs) embedded in an InAlGaAs barrier lattice-matched to InP(001) grown with the use of a ripening step in molecular beam epitaxy. The method leads to the growth of in-plane symmetric QDs of low surface density, characterized by a multimodal size distribution resulting in a spectrally broad emission in the range of $1.4-2.0$ $μ$m, essential for many near-infrared photonic applications. We find that, in contrast to the InAs/InP system, the multimodal distribution results here from a two-monolayer difference in QD height between consecutive families of dots. This may stem from the long-range ordering in the quaternary barrier alloy that stabilizes QD nucleation. Measuring the photoluminescence (PL) lifetime of the spectrally broad emission, we find a nearly dispersionless value of $1.3\pm0.3$ ns. Finally, we examine the temperature dependence of emission characteristics. We underline the impact of localized states in the wetting layer playing the role of carrier reservoir during thermal carrier redistribution. We determine the hole escape to the InAlGaAs barrier to be a primary PL quenching mechanism in these QDs.
△ Less
Submitted 18 November, 2020;
originally announced November 2020.
-
Optical and electronic properties of low-density InAs/InP quantum dot-like structures devoted to single-photon emitters at telecom wavelengths
Authors:
P. Holewa,
M. Gawełczyk,
C. Ciostek,
P. Wyborski,
S. Kadkhodazadeh,
E. Semenova,
M. Syperek
Abstract:
Due to their band-structure and optical properties, InAs/InP quantum dots (QDs) constitute a promising system for single-photon generation at third telecom window of silica fibers and for applications in quantum communication networks. However, obtaining the necessary low in-plane density of emitters remains a challenge. Such structures are also still less explored than their InAs/GaAs counterpart…
▽ More
Due to their band-structure and optical properties, InAs/InP quantum dots (QDs) constitute a promising system for single-photon generation at third telecom window of silica fibers and for applications in quantum communication networks. However, obtaining the necessary low in-plane density of emitters remains a challenge. Such structures are also still less explored than their InAs/GaAs counterparts regarding optical properties of confined carriers. Here, we report on the growth via metal-organic vapor phase epitaxy and investigation of low-density InAs/InP QD-like structures, emitting in the range of 1.2-1.7 $μ$m, which includes the S, C, and L bands of the third optical window. We observe multiple photoluminescence (PL) peaks originating from flat QDs with height of small integer numbers of material monolayers. Temperature-dependent PL reveals redistribution of carriers between families of QDs. Via time-resolved PL, we obtain radiative lifetimes nearly independent of emission energy in contrast to previous reports on InAs/InP QDs, which we attribute to strongly height-dependent electron-hole correlations. Additionally, we observe neutral and charged exciton emission from spatially isolated emitters. Using the 8-band k${\cdot}$p model and configuration-interaction method, we successfully reproduce energies of emission lines, the dispersion of exciton lifetimes, carrier activation energies, as well as the biexciton binding energy, which allows for a detailed and comprehensive analysis of the underlying physics.
△ Less
Submitted 16 December, 2019;
originally announced December 2019.
-
Single dot photoluminescence excitation spectroscopy in the telecommunication spectral range
Authors:
Paweł Podemski,
Aleksander Maryński,
Paweł Wyborski,
Artem Bercha,
Witold Trzeciakowski,
Grzegorz Sęk
Abstract:
Single dot photoluminescence excitation spectroscopy provides an insight into energy structure of individual quantum dots, energy transfer processes within and between the dots and their surroundings. The access to single dot energy structure is vital for further development of telecom-based quantum emitters, like single photon sources or entangled pair of photons. However, application of single d…
▽ More
Single dot photoluminescence excitation spectroscopy provides an insight into energy structure of individual quantum dots, energy transfer processes within and between the dots and their surroundings. The access to single dot energy structure is vital for further development of telecom-based quantum emitters, like single photon sources or entangled pair of photons. However, application of single dot photoluminescence excitation spectroscopy is limited mainly to dots emitting below 1 $μ$m, while nanostructures optically active in the telecommunication windows of 1.3 and 1.55 $μ$m are of particular interest, as they correspond to the desirable wavelengths in nanophotonic applications. This report presents an approach to photoluminescence excitation spectroscopy covering this application-relevant spectral range on single dot level. Experimental details are discussed, including issues related to the tunable excitation source and its spectral filtering, and illustrated with examples of photoluminescence excitation spectroscopy results from single quantum dots emitting in both the 1.3 and 1.55 $μ$m spectral ranges.
△ Less
Submitted 25 April, 2019; v1 submitted 22 March, 2019;
originally announced March 2019.
