Showing 1–50 of 55 results for author: Wurstbauer, U

Quadratic optical response of CrSBr controlled by spin-selective interlayer coupling

Authors: Marie-Christin Heißenbüttel, Pierre-Maurice Piel, Julian Klein, Thorsten Deilmann, Ursula Wurstbauer, Michael Rohlfing

Abstract: The optical properties of the layered magnet CrSBr are dominated by intralayer excitons: the antiferromagnetic order between the layers makes layer-to-layer charge hop**, and therefore interlayer excitons, spin-forbidden. An external magnetic field, however, continuously drives the magnetic order towards layer-to-layer ferromagnetic, which opens spin-allowed charge-transfer channels between the… ▽ More The optical properties of the layered magnet CrSBr are dominated by intralayer excitons: the antiferromagnetic order between the layers makes layer-to-layer charge hop**, and therefore interlayer excitons, spin-forbidden. An external magnetic field, however, continuously drives the magnetic order towards layer-to-layer ferromagnetic, which opens spin-allowed charge-transfer channels between the layers. Here we elaborate how their admixture changes the composition and nature of the excitons, leading to an extension over many layers, and causes a quadratic red-shift with respect to the external magnetic field. We address these effects by ab-initio $GW$-BSE calculations as a function of magnetic field and cast the data into a minimal four-band model to elucidate the interplay between the various interaction and coupling mechanisms. Our findings should be generally valid for antiferromagnetic layered magnets with and without external magnetic fields, and moreover for any couple of layers with different spin directions. Our insights help to systematically address excitons and predict their optical signatures in such systems. △ Less

Submitted 29 March, 2024; originally announced March 2024.

Comments: 9 pages, 3 figures

Collective charge excitations between moiré-minibands in twisted WSe2 bilayers from resonant inelastic light scattering

Authors: Nihit Saigal, Lennart Klebl, Hendrik Lambers, Sina Bahmanyar, Veljko Antić, Dante M. Kennes, Tim O. Wehling, Ursula Wurstbauer

Abstract: We establish low-temperature resonant inelastic light scattering (RILS) spectroscopy as a tool to probe the formation of a series of moiré-bands in twisted WSe_{2} bilayers by accessing collective intermoiré-band excitations (IMBE). We observe resonances in RILS spectra at energies in agreement with inter-moiré band transitions obtained from an ab-initio based continuum model. Transitions between… ▽ More We establish low-temperature resonant inelastic light scattering (RILS) spectroscopy as a tool to probe the formation of a series of moiré-bands in twisted WSe_{2} bilayers by accessing collective intermoiré-band excitations (IMBE). We observe resonances in RILS spectra at energies in agreement with inter-moiré band transitions obtained from an ab-initio based continuum model. Transitions between the first and second inter-moiré band for a twist angle of about 8° are reported and between first and second, third and higher bands for a twist of about 3°. The signatures from IMBE for the latter highlight a strong departure from parabolic bands with flat minibands exhibiting very high density of states in accord with theory. These observations allow to quantify the transition energies at the K-point where the states relevant for correlation physics are hosted. △ Less

Submitted 14 June, 2024; v1 submitted 22 October, 2023; originally announced October 2023.

Comments: 6 pages, 3 figures and SI with 12 pages and 8 SI figures

Exciton-phonon-scattering: A competition between bosonic and fermionic nature of bound electron-hole pairs

Authors: Manuel Katzer, Malte Selig, Lukas Sigl, Mirco Troue, Johannes Figueiredo, Jonas Kiemle, Florian Sigger, Ursula Wurstbauer, Alexander W. Holleitner, Andreas Knorr

Abstract: The question of macroscopic occupation and spontaneous emergence of coherence for exciton ensembles has gained renewed attention due to the rise of van der Waals heterostructures made of atomically thin semiconductors. The hosted interlayer excitons exhibit nanosecond lifetimes, long enough to allow for excitonic thermalization in time. Several experimental studies reported signatures of macroscop… ▽ More The question of macroscopic occupation and spontaneous emergence of coherence for exciton ensembles has gained renewed attention due to the rise of van der Waals heterostructures made of atomically thin semiconductors. The hosted interlayer excitons exhibit nanosecond lifetimes, long enough to allow for excitonic thermalization in time. Several experimental studies reported signatures of macroscopic occupation effects at elevated exciton densities. With respect to theory, excitons are composite particles formed by fermionic constituents, and a general theoretical argument for a bosonic thermalization of an exciton gas beyond the linear regime is still missing. Here, we derive an equation for the phonon mediated thermalization at densities above the classical limit, and identify which conditions favor the thermalization of fermionic or bosonic character, respectively. In cases where acoustic, quasielastic phonon scattering dominates the dynamics, our theory suggests that transition metal dichalcogenide (TMDC) excitons might be bosonic enough to show bosonic thermalization behaviour and decreasing dephasing for increasing exciton densities. This can be interpreted as a signature of an emerging coherence in the exciton ground state, and agrees well with the experimentally observed features, such as a decreasing linewidth for increasing densities. △ Less

Submitted 21 March, 2023; originally announced March 2023.

Extended spatial coherence of interlayer excitons in MoSe$_2$/WSe$_2$ heterobilayers

Authors: Mirco Troue, Johannes Figueiredo, Lukas Sigl, Christos Paspalides, Manuel Katzer, Takashi Taniguchi, Kenji Watanabe, Malte Selig, Andreas Knorr, Ursula Wurstbauer, Alexander W. Holleitner

Abstract: We report on the spatial coherence of interlayer exciton ensembles as formed in MoSe$_2$/WSe$_2$ heterostructures and characterized by point-inversion Michelson-Morley interferometry. Below 10 K, the measured spatial coherence length of the interlayer excitons reaches values equivalent to the lateral expansion of the exciton ensembles. In this regime, the light emission of the excitons turns out t… ▽ More We report on the spatial coherence of interlayer exciton ensembles as formed in MoSe$_2$/WSe$_2$ heterostructures and characterized by point-inversion Michelson-Morley interferometry. Below 10 K, the measured spatial coherence length of the interlayer excitons reaches values equivalent to the lateral expansion of the exciton ensembles. In this regime, the light emission of the excitons turns out to be homogeneously broadened in energy with a high temporal coherence. At higher temperatures, both the spatial coherence length and the temporal coherence time decrease, most likely because of thermal processes. The presented findings point towards a spatially extended, coherent many-body state of interlayer excitons at low temperature. △ Less

Submitted 20 February, 2023; originally announced February 2023.

Exciton manifolds in highly ambipolar doped WS2

Authors: David Otto Tiede, Nihit Saigal, Hossein Ostovar, Vera Döring, Hendrik Lambers, Ursula Wurstbauer

Abstract: The disentanglement of single and many particle properties in 2D semiconductors and their dependencies on high carrier concentration is challenging to experimentally study by pure optical means. We establish an electrolyte gated WS2 monolayer field-effect structure capable to shift the Fermi level from the valence into the conduction band suitable to optically trace exciton binding as well as the… ▽ More The disentanglement of single and many particle properties in 2D semiconductors and their dependencies on high carrier concentration is challenging to experimentally study by pure optical means. We establish an electrolyte gated WS2 monolayer field-effect structure capable to shift the Fermi level from the valence into the conduction band suitable to optically trace exciton binding as well as the single particle band gap energies in the weakly doped regime. Combined spectroscopic imaging ellipsometry and photoluminescence spectroscopies spanning large n- and p-type do** with charge carrier densities up to 10^14 cm-2 enable to study screening phenomena and do** dependent evolution of the rich exciton manifold whose origin is controversially discussed in literature. We show that the two most prominent emission bands in photoluminescence experiments are due to the recombination of spin-forbidden and momentum-forbidden charge neutral excitons activated by phonons. The observed interband transitions are redshifted and drastically weakened under electron or hole do**. This field-effect platform is not only suitable for studying exciton manifold but is also suitable for combined optical and transport measurements on degenerately doped atomically thin quantum materials at cryogenic temperatures. △ Less

Submitted 17 August, 2022; originally announced August 2022.

Comments: 10 pages, 5 figures, 1 table

Spectroscopic imaging ellipsometry of two-dimensional TMDC heterostructures

Authors: Florian Sigger, Hendrik Lambers, Nisi Katharina, Julian Klein, Nihit Saigal, Alexander W. Holleitner, Ursula Wurstbauer

Abstract: Semiconducting two-dimensional materials and their heterostructures gained a lot of interest for applications as well as fundamental studies due to their rich optical properties. Assembly in van der Waals heterostacks can significantly alter the intrinsic optical properties as well as the wavelength-dependent absorption and emission efficiencies making a direct comparison of e.g. photoluminescence… ▽ More Semiconducting two-dimensional materials and their heterostructures gained a lot of interest for applications as well as fundamental studies due to their rich optical properties. Assembly in van der Waals heterostacks can significantly alter the intrinsic optical properties as well as the wavelength-dependent absorption and emission efficiencies making a direct comparison of e.g. photoluminescence intensities difficult. Here, we determine the dielectric function for the prototypical MoSe2/WSe2 heterobilayer and their individual layers. Apart from a redshift of 18 meV - 44 meV of the energetically lowest interband transitions, we find that for larger energies the dielectric function can only be described by treating the van der Waals heterobilayer as a new artificial homobilayer crystal rather than a stack of individual layers. The determined dielectric functions are applied to calculate the Michelson contrast of the individual layers and the bilayer in dependence of the oxide thickness of often used Si/SiO2 substrates. Our results highlight the need to consider the altered dielectric functions impacting the Michelson interference in the interpretation of intensities in optical measurements such as Raman scattering or photoluminescence. △ Less

Submitted 11 July, 2022; originally announced July 2022.

Comments: 6 pages, 4 figures

The bulk van der Waals layered magnet CrSBr is a quasi-1D material

Authors: Julian Klein, Benjamin **ault, Matthias Florian, Marie-Christin Heißenbüttel, Alexander Steinhoff, Zhigang Song, Kierstin Torres, Florian Dirnberger, Jonathan B. Curtis, Mads Weile, Aubrey Penn, Thorsten Deilmann, Rami Dana, Rezlind Bushati, Jiamin Quan, Jan Luxa, Zdenek Sofer, Andrea Alù, Vinod M. Menon, Ursula Wurstbauer, Michael Rohlfing, Prineha Narang, Marko Lončar, Frances M. Ross

Abstract: Correlated quantum phenomena in one-dimensional (1D) systems that exhibit competing electronic and magnetic order are of strong interest for studying fundamental interactions and excitations, such as Tomonaga-Luttinger liquids and topological orders and defects with properties completely different from the quasiparticles expected in their higher-dimensional counterparts. However, clean 1D electron… ▽ More Correlated quantum phenomena in one-dimensional (1D) systems that exhibit competing electronic and magnetic order are of strong interest for studying fundamental interactions and excitations, such as Tomonaga-Luttinger liquids and topological orders and defects with properties completely different from the quasiparticles expected in their higher-dimensional counterparts. However, clean 1D electronic systems are difficult to realize experimentally, particularly magnetically ordered systems. Here, we show that the van der Waals layered magnetic semiconductor CrSBr behaves like a quasi-1D material embedded in a magnetically ordered environment. The strong 1D electronic character originates from the Cr-S chains and the combination of weak interlayer hybridization and anisotropy in effective mass and dielectric screening with an effective electron mass ratio of $m^e_X/m^e_Y \sim 50$. This extreme anisotropy experimentally manifests in strong electron-phonon and exciton-phonon interactions, a Peierls-like structural instability and a Fano resonance from a van Hove singularity of similar strength of metallic carbon nanotubes. Moreover, due to the reduced dimensionality and interlayer coupling, CrSBr hosts spectrally narrow (1 meV) excitons of high binding energy and oscillator strength that inherit the 1D character. Overall, CrSBr is best understood as a stack of weakly hybridized monolayers and appears to be an experimentally attractive candidate for the study of exotic exciton and 1D correlated many-body physics in the presence of magnetic order. △ Less

Submitted 2 March, 2023; v1 submitted 26 May, 2022; originally announced May 2022.

Comments: main: 16 pages, 5 figures; SI: 15 pages, 9 figures

Journal ref: ACS Nano (2023)

Domain Textures in the Fractional Quantum Hall Effect

Authors: Ziyu Liu, Ursula Wurstbauer, Lingjie Du, Ken W. West, Loren N. Pfeiffer, Michael J. Manfra, Aron Pinczuk

Abstract: Impacts of domain textures on low-lying neutral excitations in the bulk of fractional quantum Hall effect (FQHE) systems are probed by resonant inelastic light scattering. We demonstrate that large domains of quantum fluids support long-wavelength neutral collective excitations with well-defined wave vector (momentum) dispersion that could be interpreted by theories for uniform phases. Access to d… ▽ More Impacts of domain textures on low-lying neutral excitations in the bulk of fractional quantum Hall effect (FQHE) systems are probed by resonant inelastic light scattering. We demonstrate that large domains of quantum fluids support long-wavelength neutral collective excitations with well-defined wave vector (momentum) dispersion that could be interpreted by theories for uniform phases. Access to dispersive low-lying neutral collective modes in large domains of FQHE fluids such as long wavelength magnetorotons at filling factor v=1/3 offer significant experimental access to strong electron correlation physics in the FQHE. △ Less

Submitted 7 January, 2022; originally announced January 2022.

Comments: 11 pages, 4 figures, and Supplemental Material

Journal ref: Phys. Rev. Lett. 128, 017401 (2022)

Optical dipole orientation of interlayer excitons in MoSe$_{2}$-WSe$_{2}$ heterostacks

Authors: Lukas Sigl, Mirco Troue, Manuel Katzer, Malte Selig, Florian Sigger, Jonas Kiemle, Mauro Brotons-Gisbert, Kenji Watanabe, Takashi Taniguchi, Brian D. Gerardot, Andreas Knorr, Ursula Wurstbauer, Alexander W. Holleitner

Abstract: We report on the far-field photoluminescence intensity distribution of interlayer excitons in MoSe$_{2}$-WSe$_{2}$ heterostacks as measured by back focal plane imaging in the temperature range between 1.7 K and 20 K. By comparing the data with an analytical model describing the dipolar emission pattern in a dielectric environment, we are able to obtain the relative contributions of the in- and out… ▽ More We report on the far-field photoluminescence intensity distribution of interlayer excitons in MoSe$_{2}$-WSe$_{2}$ heterostacks as measured by back focal plane imaging in the temperature range between 1.7 K and 20 K. By comparing the data with an analytical model describing the dipolar emission pattern in a dielectric environment, we are able to obtain the relative contributions of the in- and out-of-plane transition dipole moments associated to the interlayer exciton photon emission. We determine the transition dipole moments for all observed interlayer exciton transitions to be (99 $\pm$ 1)% in-plane for R- and H-type stacking, independent of the excitation power and therefore the density of the exciton ensemble in the experimentally examined range. Finally, we discuss the limitations of the presented measurement technique to observe correlation effects in exciton ensembles. △ Less

Submitted 2 November, 2021; originally announced November 2021.

Tunable Two-Dimensional Group-III Metal Alloys

Authors: Siavash Rajabpour, Alexander Vera, Wen He, Benjamin N. Katz, Roland J. Koch, Margaux Lassaunière, Xuegang Chen, Cequn Li, Katharina Nisi, Hesham El-Sherif, Maxwell T. Wetherington, Chengye Dong, Aaron Bostwick, Chris Jozwiak, Adri C. T. van Duin, Nabil Bassim, Jun Zhu, Gwo-Ching Wang, Ursula Wurstbauer, Eli Rotenberg, Vincent Crespi, Su Ying Quek, Joshua A. Robinson

Abstract: Chemically stable quantum-confined 2D metals are of interest in next-generation nanoscale quantum devices. Bottom-up design and synthesis of such metals could enable the creation of materials with tailored, on-demand, electronic and optical properties for applications that utilize tunable plasmonic coupling, optical non-linearity, epsilon-near-zero behavior, or wavelength-specific light trap**.… ▽ More Chemically stable quantum-confined 2D metals are of interest in next-generation nanoscale quantum devices. Bottom-up design and synthesis of such metals could enable the creation of materials with tailored, on-demand, electronic and optical properties for applications that utilize tunable plasmonic coupling, optical non-linearity, epsilon-near-zero behavior, or wavelength-specific light trap**. In this work, we demonstrate that the electronic, superconducting and optical properties of air-stable two-dimensional metals can be controllably tuned by the formation of alloys. Environmentally robust large-area two-dimensional InxGa1-x alloys are synthesized by Confinement Heteroepitaxy (CHet). Near-complete solid solubility is achieved with no evidence of phase segregation, and the composition is tunable over the full range of x by changing the relative elemental composition of the precursor. The optical and electronic properties directly correlate with alloy composition, wherein the dielectric function, band structure, superconductivity, and charge transfer from the metal to graphene are all controlled by the indium/gallium ratio in the 2D metal layer. △ Less

Submitted 31 May, 2021; originally announced June 2021.

Photo-physics and electronic structure of lateral graphene/MoS2 and metal/MoS2 junctions

Authors: Shruti Subramanian, Quinn T. Campbell, Simon Moser, Jonas Kiemle, Philipp Zimmermann, Paul Seifert, Florian Sigger, Deeksha Sharma, Hala Al-Sadeg, Michael Labella III, Dacen Waters, Randall M. Feenstra, Roland J. Koch, Chris Jozwiak, Aaron Bostwick, Eli Rotenberg, Ismaila Dabo, Alexander Holleitner, Thomas E. Beechem, Ursula Wurstbauer, Joshua A. Robinson

Abstract: Integration of semiconducting transition metal dichalcogenides (TMDs) into functional optoelectronic circuitries requires an understanding of the charge transfer across the interface between the TMD and the contacting material. Here, we use spatially resolved photocurrent microscopy to demonstrate electronic uniformity at the epitaxial graphene/molybdenum disulfide (EG/MoS2) interface. A 10x large… ▽ More Integration of semiconducting transition metal dichalcogenides (TMDs) into functional optoelectronic circuitries requires an understanding of the charge transfer across the interface between the TMD and the contacting material. Here, we use spatially resolved photocurrent microscopy to demonstrate electronic uniformity at the epitaxial graphene/molybdenum disulfide (EG/MoS2) interface. A 10x larger photocurrent is extracted at the EG/MoS2 interface when compared to metal (Ti/Au) /MoS2 interface. This is supported by semi-local density-functional theory (DFT), which predicts the Schottky barrier at the EG/MoS2 interface to be ~2x lower than Ti/MoS2. We provide a direct visualization of a 2D material Schottky barrier through combination of angle resolved photoemission spectroscopy with spatial resolution selected to be ~300 nm (nano-ARPES) and DFT calculations. A bending of ~500 meV over a length scale of ~2-3 micrometer in the valence band maximum of MoS2 is observed via nano-ARPES. We explicate a correlation between experimental demonstration and theoretical predictions of barriers at graphene/TMD interfaces. Spatially resolved photocurrent map** allows for directly visualizing the uniformity of built-in electric fields at heterostructure interfaces, providing a guide for microscopic engineering of charge transport across heterointerfaces. This simple probe-based technique also speaks directly to the 2D synthesis community to elucidate electronic uniformity at domain boundaries alongside morphological uniformity over large areas. △ Less

Submitted 25 June, 2020; originally announced June 2020.

Unexpected Near-Infrared to Visible Non-linear Optical Properties from Two-Dimensional Polar Metals

Authors: Megan A. Steves, Yuanxi Wang, Natalie Briggs, Tian Zhao, Hesham El-Sherif, Brian Bersch, Shruti Subramanian, Chengye Dong, Timothy Bowen, Ana De La Fuente Duran, Katharina Nisi, Margaux Lassaunière, Ursula Wurstbauer, Nabil Bassim, Jose J. Fonseca, Jeremy T. Robinson, Vincent Crespi, Joshua Robinson, Kenneth L. Knappenberger Jr

Abstract: Near-infrared-to-visible second harmonic generation from air-stable two-dimensional polar gallium and indium metals is described. The photonic properties of 2D metals - including the largest second-order susceptibilities reported for metals (approaching 10nm$^2$/V) - are determined by the atomic-level structure and bonding of two-to-three-atom-thick crystalline films. The bond character evolved fr… ▽ More Near-infrared-to-visible second harmonic generation from air-stable two-dimensional polar gallium and indium metals is described. The photonic properties of 2D metals - including the largest second-order susceptibilities reported for metals (approaching 10nm$^2$/V) - are determined by the atomic-level structure and bonding of two-to-three-atom-thick crystalline films. The bond character evolved from covalent to metallic over a few atomic layers, changing the out-of-plane metal-metal bond distances by approximately ten percent (0.2 $\unicode{x212B}$), resulting in symmetry breaking and an axial electrostatic dipole that mediated the large nonlinear response. Two different orientations of the crystalline metal atoms, corresponding to lateral displacements < 2 $\unicode{x212B}$, persisted in separate micron-scale terraces to generate distinct harmonic polarizations. This strong atomic-level structure-property interplay suggests metal photonic properties can be controlled with atomic precision. △ Less

Submitted 24 August, 2020; v1 submitted 3 April, 2020; originally announced April 2020.

Scalable single-photon sources in atomically thin MoS2

Authors: Julian Klein, Lukas Sigl, Samuel Gyger, Katja Barthelmi, Matthias Florian, Sergio Rey, Takashi Taniguchi, Kenji Watanabe, Frank Jahnke, Christoph Kastl, Val Zwiller, Klaus D. Jöns, Kai Müller, Ursula Wurstbauer, Jonathan J. Finley, Alexander W. Holleitner

Abstract: Real-world quantum applications, eg. on-chip quantum networks and quantum cryptography, necessitate large scale integrated single-photon sources with nanoscale footprint for modern information technology. While on-demand and high fidelity implantation of atomic scale single-photon sources in conventional 3D materials suffer from uncertainties due to the crystals dimensionality, layered 2D material… ▽ More Real-world quantum applications, eg. on-chip quantum networks and quantum cryptography, necessitate large scale integrated single-photon sources with nanoscale footprint for modern information technology. While on-demand and high fidelity implantation of atomic scale single-photon sources in conventional 3D materials suffer from uncertainties due to the crystals dimensionality, layered 2D materials can host point-like centers with inherent confinement to a sub-nm plane. However, previous attempts to truly deterministically control spatial position and spectral homogeneity while maintaining the 2D character have not been realized. Here, we demonstrate the on-demand creation and precise positioning of single-photon sources in atomically thin MoS2 with very narrow ensemble broadening and near-unity fabrication yield. Focused ion beam irradiation creates 100s to 1000s of mono-typical atomistic defects with anti-bunched emission lines with sub-10 nm lateral and 0.7 nm axial positioning accuracy. Our results firmly establish 2D materials as a scalable platform for single-photon emitters with unprecedented control of position as well as photophysical properties owing to the all-interfacial nature. △ Less

Submitted 20 February, 2020; originally announced February 2020.

Comments: 13 pages, 4 figures

Journal ref: ACS Photonics 8, 669-677 (2021)

Light-matter interaction in van der Waals heterostructures

Authors: Thorsten Deilmann, Michael Rohlfing, Ursula Wurstbauer

Abstract: Even if individual two-dimensional materials own various interesting and unexpected properties, the stacking of such layers leads to van der Waals solids which unite the characteristics of two dimensions with novel features originating from the interlayer interactions. In this topical review, we cover fabrication and characterization of van der Waals heterosructures with a focus on heterobilayers… ▽ More Even if individual two-dimensional materials own various interesting and unexpected properties, the stacking of such layers leads to van der Waals solids which unite the characteristics of two dimensions with novel features originating from the interlayer interactions. In this topical review, we cover fabrication and characterization of van der Waals heterosructures with a focus on heterobilayers made of monolayers of semiconducting transition metal dichalcogenides. Experimental and theoretical techniques to investigate those heterobilayers are introduced. Most recent findings focusing on different transition metal dichalcogenides heterostructures are presented and possible optical transitions between different valleys, appearance of moire patterns and signatures of moire excitons are discussed. The fascinating and fast growing research on van der Waals hetero-bilayers provide promising insights required for their application as emerging quantum-nano materials. △ Less

Submitted 19 February, 2020; originally announced February 2020.

Comments: 14 pages, 6 figures

Journal ref: J. Phys.: Condens. Matter 32, 333002 (2020)

Condensation signatures of photogenerated interlayer excitons in a van der Waals heterostack

Authors: Lukas Sigl, Florian Sigger, Fabian Kronowetter, Jonas Kiemle, Julian Klein, Kenji Watanabe, Takashi Taniguchi, Jonathan J. Finley, Ursula Wurstbauer, Alexander W. Holleitner

Abstract: Atomistic van der Waals heterostacks are ideal systems for high-temperature exciton condensation because of large exciton binding energies and long lifetimes. Charge transport and electron energy-loss spectroscopy showed first evidence of excitonic many-body states in such two-dimensional materials. Pure optical studies, the most obvious way to access the phase diagram of photogenerated excitons h… ▽ More Atomistic van der Waals heterostacks are ideal systems for high-temperature exciton condensation because of large exciton binding energies and long lifetimes. Charge transport and electron energy-loss spectroscopy showed first evidence of excitonic many-body states in such two-dimensional materials. Pure optical studies, the most obvious way to access the phase diagram of photogenerated excitons have been elusive. We observe several criticalities in photogenerated exciton ensembles hosted in MoSe2-WSe2 heterostacks with respect to photoluminescence intensity, linewidth, and temporal coherence pointing towards the transition to a coherent quantum state. For this state, the occupation is 100 percent and the exciton diffusion length is increased. The phenomena survive above 10 kelvin, consistent with the predicted critical condensation temperature. Our study provides a first phase-diagram of many-body interlayer exciton states including Bose Einstein condensation. △ Less

Submitted 21 January, 2020; originally announced January 2020.

Comments: 26 pages, 16 figures

Journal ref: Phys. Rev. Research 2, 042044 (2020)

Control of the orbital character of indirect excitons in MoS2/WS2 heterobilayers

Authors: Jonas Kiemle, Florian Sigger, Michael Lorke, Bastian Miller, Kenji Watanabe, Takashi Taniguchi, Alexander Holleitner, Ursula Wurstbauer

Abstract: Valley selective hybridization and residual coupling of electronic states in commensurate van der Waals heterobilayers enable the control of the orbital character of interlayer excitons. We demonstrate electric field control of layer index, orbital character, lifetime and emission energy of indirect excitons in MoS2/WS2 heterobilayers embedded in an vdW field effect structure. Different excitonic… ▽ More Valley selective hybridization and residual coupling of electronic states in commensurate van der Waals heterobilayers enable the control of the orbital character of interlayer excitons. We demonstrate electric field control of layer index, orbital character, lifetime and emission energy of indirect excitons in MoS2/WS2 heterobilayers embedded in an vdW field effect structure. Different excitonic dipoles normal to the layers are found to stem from bound electrons and holes located in different valleys of MoS2/WS2 with a valley selective degree of hybridization. For the energetically lowest emission lines, coupling of electronic states causes a field-dependent level anticrossing that goes along with a change of the IX lifetime from 400 ns to 100 ns. In the hybridized regime the exiton is delocalized between the two constituent layers, whereas for large positive or negative electric fields, the layer index of the bound hole is field-dependent. Our results demonstrate the design of novel van der Waals solids with the possibility to in-situ control their physical properties via external stimuli such as electric fields. △ Less

Submitted 5 December, 2019; originally announced December 2019.

Comments: 5 pages, 3 figures

Journal ref: Phys. Rev. B 101, 121404 (2020)

Impact of intrinsic and extrinsic imperfections on the electronic and optical properties of MoS2

Authors: J. Klein, A. Kerelsky, M. Lorke, M. Florian, F. Sigger, J. Kiemle, M. C. Reuter, T. Taniguchi, K. Watanabe, J. J. Finley, A. Pasupathy, A. W. Holleitner, F. M. Ross, U. Wurstbauer

Abstract: Intrinsic and extrinsic disorder from lattice imperfections, substrate and environment has a strong effect on the local electronic structure and hence the optical properties of atomically thin transition metal dichalcogenides that are determined by strong Coulomb interaction. Here, we examine the role of the substrate material and intrinsic defects in monolayer MoS2 crystals on SiO2 and hBN substr… ▽ More Intrinsic and extrinsic disorder from lattice imperfections, substrate and environment has a strong effect on the local electronic structure and hence the optical properties of atomically thin transition metal dichalcogenides that are determined by strong Coulomb interaction. Here, we examine the role of the substrate material and intrinsic defects in monolayer MoS2 crystals on SiO2 and hBN substrates using a combination of scanning tunneling spectroscopy, scanning tunneling microscopy, optical absorbance, and low-temperature photoluminescence measurements. We find that the different substrates significantly impact the optical properties and the local density of states near the conduction band edge observed in tunneling spectra. While the SiO2 substrates induce a large background do** with electrons and a substantial amount of band tail states near the conduction band edge of MoS2, such states as well as the high do** density are absent using high quality hBN substrates. By accounting for the substrate effects we obtain a quasiparticle gap that is in excellent agreement with optical absorbance spectra and we deduce an exciton binding energy of about 480 meV. We identify several intrinsic lattice defects that are ubiquitious in MoS2, but we find that on hBN substrates the impact of these defects appears to be passivated. We conclude that the choice of substrate controls both the effects of intrinsic defects and extrinsic disorder, and thus the electronic and optical properties of MoS2. The correlation of substrate induced disorder and defects on the electronic and optical properties of MoS2 contributes to an in-depth understanding of the role of the substrates on the performance of 2D materials and will help to further improve the properties of 2D materials based quantum nanosystems. △ Less

Submitted 3 May, 2019; originally announced May 2019.

Comments: 23 pages, 4 figures

Observation of new plasmons in the fractional quantum Hall effect: interplay of topological and nematic orders

Authors: Lingjie Du, Ursula Wurstbauer, Ken W. West, Loren N. Pfeiffer, Saeed Fallahi, Geoff C. Gardner, Michael J. Manfra, Aron Pinczuk

Abstract: Collective modes of exotic quantum fluids reveal underlying physical mechanisms responsible for emergent complex quantum ground states. We observe unexpected new collective modes in the fractional quantum Hall (FQH) regime: intra-Landau-level plasmons in the second Landau level measured by resonant inelastic light scattering. The plasmons herald rotational-symmetry-breaking phases in tilted magnet… ▽ More Collective modes of exotic quantum fluids reveal underlying physical mechanisms responsible for emergent complex quantum ground states. We observe unexpected new collective modes in the fractional quantum Hall (FQH) regime: intra-Landau-level plasmons in the second Landau level measured by resonant inelastic light scattering. The plasmons herald rotational-symmetry-breaking phases in tilted magnetic fields and reveal long-range translational invariance in these phases. The fascinating dependence of plasmon features on filling factor provide new insights on interplays between topological quantum Hall order and nematic electronic liquid crystal phases. A marked intensity minimum in the plasmon spectrum at Landau level filling factor v = 5/2 strongly suggests that this paired state, which could support non-Abelian excitations, overwhelms competing nematic phases, unveiling the robustness of the 5/2 superfluid state for small tilt angles. At v = 7/3, a sharp and strong plasmon peak that links to emerging macroscopic coherence supports the proposed model of a FQH nematic state at this filling factor. △ Less

Submitted 6 February, 2019; originally announced February 2019.

Journal ref: Science Advances 5, eaav3407 (2019)

Atomistic defect states as quantum emitters in monolayer MoS$_2$

Authors: Julian Klein, Michael Lorke, Matthias Florian, Florian Sigger, Jakob Wierzbowski, John Cerne, Kai Müller, Takashi Taniguchi, Kenji Watanabe, Ursula Wurstbauer, Michael Kaniber, Michael Knap, Richard Schmidt, Jonathan J. Finley, Alexander W. Holleitner

Abstract: Quantum light sources in solid-state systems are of major interest as a basic ingredient for integrated quantum device technologies. The ability to tailor quantum emission through deterministic defect engineering is of growing importance for realizing scalable quantum architectures. However, a major difficulty is that defects need to be positioned site-selectively within the solid. Here, we overco… ▽ More Quantum light sources in solid-state systems are of major interest as a basic ingredient for integrated quantum device technologies. The ability to tailor quantum emission through deterministic defect engineering is of growing importance for realizing scalable quantum architectures. However, a major difficulty is that defects need to be positioned site-selectively within the solid. Here, we overcome this challenge by controllably irradiating single-layer MoS$_{2}$ using a sub-nm focused helium ion beam to deterministically create defects. Subsequent encapsulation of the ion bombarded MoS$_{2}$ flake with high-quality hBN reveals spectrally narrow emission lines that produce photons at optical wavelengths in an energy window of one to two hundred meV below the neutral 2D exciton of MoS$_{2}$. Based on ab-initio calculations we interpret these emission lines as stemming from the recombination of highly localized electron-hole complexes at defect states generated by the helium ion bombardment. Our approach to deterministically write optically active defect states in a single transition metal dichalcogenide layer provides a platform for realizing exotic many-body systems, including coupled single-photon sources and exotic Hubbard systems. △ Less

Submitted 14 January, 2019; v1 submitted 4 January, 2019; originally announced January 2019.

Comments: Main: 9 pages, 3 figures + SI: 19 pages, 10 figures

Journal ref: Nature Communications 10, 2755 (2019)

Hybridized indirect excitons in MoS2/WS2 heterobilayers

Authors: Jonas Kiemle, Florian Sigger, Michael Lorke, Bastian Miller, Kenji Watanabe, Takashi Taniguchi, Alexander Holleitner, Ursula Wurstbauer

Abstract: Ensembles of indirect or interlayer excitons (IXs) are intriguing systems to explore classical and quantum phases of interacting bosonic ensembles. IXs are composite bosons that feature enlarged lifetimes due to the reduced overlap of the electron-hole wave functions. We demonstrate electric Field control of indirect excitons in MoS2/WS2 hetero-bilayers embedded in a field effect structure with fe… ▽ More Ensembles of indirect or interlayer excitons (IXs) are intriguing systems to explore classical and quantum phases of interacting bosonic ensembles. IXs are composite bosons that feature enlarged lifetimes due to the reduced overlap of the electron-hole wave functions. We demonstrate electric Field control of indirect excitons in MoS2/WS2 hetero-bilayers embedded in a field effect structure with few-layer hexagonal boron nitrite as insulator and few-layer graphene as gate-electrodes. The different strength of the excitonic dipoles and a distinct temperature dependence identify the indirect excitons to stem from optical interband transitions with electrons and holes located in different valleys of the hetero-bilayer featuring highly hybridized electronic states. For the energetically lowest emission lines, we observe a field-dependent level anticrossing at low temperatures. We discuss this behavior in terms of coupling of electronic states from the two semiconducting monolayers resulting in spatially delocalized excitons of the hetero-bilayer behaving like an artificial van der Waals solid. Our results demonstrate the design of novel nano-quantum materials prepared from artificial van der Waals solids with the possibility to in-situ control their physical properties via external stimuli such as electric fields. △ Less

Submitted 27 December, 2018; originally announced December 2018.

Comments: 4 figures;

Tuning the Fröhlich exciton-phonon scattering in monolayer MoS2

Authors: Bastian Miller, Jessica Lindlau, Max Bommert, Andre Neumann, Hisato Yamaguchi, Alexander Holleitner, Alexander Högele, Ursula Wurstbauer

Abstract: A direct band gap, remarkable light-matter coupling as well as strong spin-orbit and Coulomb interaction establish two-dimensional (2D) crystals of transition metal dichalcogenides (TMDs) as an emerging material class for fundamental studies as well as novel technological concepts. Valley selective optical excitation allows for optoelectronic applications based on the momentum of excitons. In addi… ▽ More A direct band gap, remarkable light-matter coupling as well as strong spin-orbit and Coulomb interaction establish two-dimensional (2D) crystals of transition metal dichalcogenides (TMDs) as an emerging material class for fundamental studies as well as novel technological concepts. Valley selective optical excitation allows for optoelectronic applications based on the momentum of excitons. In addition to lattice imperfections and disorder, scattering by phonons is a significant mechanism for valley depolarization and decoherence in TMDs at elevated temperatures preventing high-temperature valley polarization required for realistic applications. Thus, a detailed knowledge about strength and nature of the interaction of excitons with phonons is vital. We directly access exciton-phonon coupling in charge tunable single layer MoS2 devices by polarization resolved Raman spectroscopy. We observe a strong defect mediated coupling between the long-range oscillating electric field induced by the longitudinal optical (LO) phonon in the dipolar medium and the exciton. We find that this so-called Fröhlich exciton LO-phonon interaction is suppressed by do**. This suppression correlates with a distinct increase of the degree of valley polarization of up to 20 % even at elevated temperatures of 220 K. Our result demonstrates a promising strategy to increase the degree of valley polarization towards room temperature valleytronic applications. △ Less

Submitted 22 November, 2018; originally announced November 2018.

Comments: 18 pages, 3 figures, SI

Photo-induced anomalous Hall effect in the type-II Weyl-semimetal WTe2 at room-temperature

Authors: Paul Seifert, Florian Sigger, Jonas Kiemle, Kenji Watanabe, Takashi Taniguchi, Christoph Kastl, Ursula Wurstbauer, Alexander Holleitner

Abstract: Using Hall photovoltage measurements, we demonstrate that an anomalous Hall-voltage can be induced in few layer WTe2 under circularly polarized light illumination. By applying a bias voltage along different crystal axes, we find that the photo-induced anomalous Hall conductivity coincides with a particular crystal axis. Our results are consistent with the underlying Berry-curvature exhibiting a di… ▽ More Using Hall photovoltage measurements, we demonstrate that an anomalous Hall-voltage can be induced in few layer WTe2 under circularly polarized light illumination. By applying a bias voltage along different crystal axes, we find that the photo-induced anomalous Hall conductivity coincides with a particular crystal axis. Our results are consistent with the underlying Berry-curvature exhibiting a dipolar distribution due to the breaking of crystal inversion symmetry. Using a time-resolved optoelectronic auto-correlation spectroscopy, we find that the decay time of the anomalous Hall voltage exceeds the electron-phonon scattering time by orders of magnitude but is consistent with the comparatively long spin-lifetime of carriers in the momentum-indirect electron and hole pockets in WTe2. Our observation suggests, that a helical modulation of an otherwise isotropic spin-current is the underlying mechanism of the anomalous Hall effect. △ Less

Submitted 2 October, 2018; originally announced October 2018.

Journal ref: Phys. Rev. B 99, 161403 (2019)

Contact morphology and revisited photocurrent dynamics in monolayer MoS2

Authors: Eric Parzinger, Martin Hetzl, Ursula Wurstbauer, Alexander W. Holleitner

Abstract: Two-dimensional (2D) layered transition metal dichalcogenides (TMDs) have emerged as promising materials for electronic, optoelectronic, and valleytronic applications. Recent work suggests drastic changes of the band gap and exciton binding energies of photo-excited TMDs with ultrafast non-radiative relaxation processes effectively heating the crystal lattice. Such phenomena have not been consider… ▽ More Two-dimensional (2D) layered transition metal dichalcogenides (TMDs) have emerged as promising materials for electronic, optoelectronic, and valleytronic applications. Recent work suggests drastic changes of the band gap and exciton binding energies of photo-excited TMDs with ultrafast non-radiative relaxation processes effectively heating the crystal lattice. Such phenomena have not been considered in the context of optoelectronic devices yet. We resolve corresponding ultrafast photo-conductance dynamics within monolayer MoS2 and demonstrate that a bolometric contribution dominates the overall photoconductance. We further reveal that a focused laser illumination, as is used in many standard optoelectronic measurements of MoS2, modifies and anneals the morphology of metal contacts. We show that a junction evolves with lateral built-in electric fields, although Raman- and photoluminescence spectra indicate no significant changes such as a crystal phase transition. We highlight how such optimized devices can drive ultrafast electromagnetic signals in on-chip high-frequency and THz circuits. △ Less

Submitted 1 August, 2017; originally announced August 2017.

Robust valley polarization of helium ion modified atomically thin MoS$_{2}$

Authors: Julian Klein, Agnieszka Kuc, Anna Nolinder, Marcus Altzschner, Jakob Wierzbowski, Florian Sigger, Franz Kreupl, Jonathan J. Finley, Ursula Wurstbauer, Alexander W. Holleitner, Michael Kaniber

Abstract: Atomically thin semiconductors have dimensions that are commensurate with critical feature sizes of future optoelectronic devices defined using electron/ion beam lithography. Robustness of their emergent optical and valleytronic properties is essential for typical exposure doses used during fabrication. Here, we explore how focused helium ion bombardment affects the intrinsic vibrational, luminesc… ▽ More Atomically thin semiconductors have dimensions that are commensurate with critical feature sizes of future optoelectronic devices defined using electron/ion beam lithography. Robustness of their emergent optical and valleytronic properties is essential for typical exposure doses used during fabrication. Here, we explore how focused helium ion bombardment affects the intrinsic vibrational, luminescence and valleytronic properties of atomically thin MoS$_{2}$. By probing the disorder dependent vibrational response we deduce the interdefect distance by applying a phonon confinement model. We show that the increasing interdefect distance correlates with disorder-related luminescence arising 180 meV below the neutral exciton emission. We perform ab-initio density functional theory of a variety of defect related morphologies, which yield first indications on the origin of the observed additional luminescence. Remarkably, no significant reduction of free exciton valley polarization is observed until the interdefect distance approaches a few nanometers, namely the size of the free exciton Bohr radius. Our findings pave the way for direct writing of sub-10 nm nanoscale valleytronic devices and circuits using focused helium ions. △ Less

Submitted 19 February, 2018; v1 submitted 3 May, 2017; originally announced May 2017.

Comments: 9 pages, 5 figures

Journal ref: 2D Materials, 5 011007 (2018)

Direct exciton emission from atomically thin transition metal dichalcogenide heterostructures near the lifetime limit

Authors: Jakob Wierzbowski, Julian Klein, Florian Sigger, Christian Straubinger, Malte Kremser, Takashi Taniguchi, Kenji Watanabe, Ursula Wurstbauer, Alexander W. Holleitner, Michael Kaniber, Kai Müller, Jonathan J. Finley

Abstract: We demonstrate the reduction of the inhomogeneous linewidth of the free excitons in atomically thin transition metal dichalcogenides (TMDCs) MoSe$_{2}$, WSe$_{2}$ and MoS$_{2}$ by encapsulation within few nanometer thick hBN. Encapsulation is shown to result in a significant reduction of the 10K excitonic linewidths down to $\sim3.5 \text{ meV}$ for n-MoSe$_{2}$, $\sim5.0 \text{ meV}$ for p-WSe… ▽ More We demonstrate the reduction of the inhomogeneous linewidth of the free excitons in atomically thin transition metal dichalcogenides (TMDCs) MoSe$_{2}$, WSe$_{2}$ and MoS$_{2}$ by encapsulation within few nanometer thick hBN. Encapsulation is shown to result in a significant reduction of the 10K excitonic linewidths down to $\sim3.5 \text{ meV}$ for n-MoSe$_{2}$, $\sim5.0 \text{ meV}$ for p-WSe$_{2}$ and $\sim4.8 \text{ meV}$ for n-MoS$_{2}$. Evidence is obtained that the hBN environment effectively lowers the Fermi level since the relative spectral weight shifts towards the neutral exciton emission in n-doped TMDCs and towards charged exciton emission in p-doped TMDCs. Moreover, we find that fully encapsulated MoS$_{2}$ shows resolvable exciton and trion emission even after high power density excitation in contrast to non-encapsulated materials. Our findings suggest that encapsulation of mechanically exfoliated few-monolayer TMDCs within nanometer thick hBN dramatically enhances optical quality, producing ultra-narrow linewidths that approach the homogeneous limit. △ Less

Submitted 30 April, 2017; originally announced May 2017.

Long-lived direct and indirect interlayer excitons in van der Waals heterostructures

Authors: Bastian Miller, Alexander Steinhoff, Borja Pano, Frank Jahnke, Alexander Holleitner, Ursula Wurstbauer

Abstract: We investigate the photoluminescence of interlayer excitons in heterostructures consisting of monolayer MoSe2 and WSe2 at low temperatures. Surprisingly, we find a doublet structure for such interlayer excitons. Both peaks exhibit long photoluminescence lifetimes of several ten nanoseconds up to 100 ns at low temperatures, which verifies the interlayer nature of both. The peak energy and linewidth… ▽ More We investigate the photoluminescence of interlayer excitons in heterostructures consisting of monolayer MoSe2 and WSe2 at low temperatures. Surprisingly, we find a doublet structure for such interlayer excitons. Both peaks exhibit long photoluminescence lifetimes of several ten nanoseconds up to 100 ns at low temperatures, which verifies the interlayer nature of both. The peak energy and linewidth of both show unusual temperature and power dependences. In particular, we observe a blue-shift of their emission energy for increasing excitation powers. At a low excitation power and low temperatures, the energetically higher peak shows several spikes. We explain the findings by two sorts of interlayer excitons; one that is indirect in real space but direct in reciprocal space, and the other one being indirect in both spaces. Our results provide fundamental insights into long-lived interlayer states in van der Waals heterostructures with possible bosonic many-body interactions △ Less

Submitted 28 March, 2017; originally announced March 2017.

Comments: 18 pages, 5 figures

Collective electronic excitation in a trapped ensemble of photogenerated dipolar excitons and free holes revealed by inelastic light scattering

Authors: Sebastian Dietl, Sheng Wang, Dieter Schuh, Werner Wegscheider, Jörg P. Kotthaus, Aron Pinczuk, Alexander W. Holleitner, Ursula Wurstbauer

Abstract: Photogenerated excitonic ensembles confined in coupled GaAs quantum wells are probed by a complementary approach of emission spectroscopy and resonant inelastic light scattering. Lateral electrostatic trap geometries are used to create dense systems of spatially indirect excitons and excess holes with similar densities in the order of 10$^{11}$ cm$^{-2}$. Inelastic light scattering spectra reveal… ▽ More Photogenerated excitonic ensembles confined in coupled GaAs quantum wells are probed by a complementary approach of emission spectroscopy and resonant inelastic light scattering. Lateral electrostatic trap geometries are used to create dense systems of spatially indirect excitons and excess holes with similar densities in the order of 10$^{11}$ cm$^{-2}$. Inelastic light scattering spectra reveal a very sharp low-lying collective mode that is identified at an energy of 0.44 meV and a FWHM of only ~50 $μ$eV. This mode is interpreted as a plasmon excitation of the excess hole system coupled to the photogenerated indirect excitons. The emission energy of the indirect excitons shifts under the application of a perpendicular applied electric field with the quantum-confined Stark effect unperturbed from the presence of free charge carriers. Our results illustrate the potential of studying low-lying collective excitations in photogenerated exciton systems to explore the many-body phase diagram, related phase transitions, and interaction physics. △ Less

Submitted 13 December, 2016; originally announced December 2016.

Comments: 19 pages, 5 figures

Light matter interaction in transition metal dichalcogenides and their heterostructures

Authors: Ursula Wurstbauer, Bastian Miller, Eric Parzinger, Alexander W. Holleitner

Abstract: The investigation of 2D van der Waals (vdW) materials is a vibrant, fast moving and still growing interdisciplinary area of research. 2D vdW materials are truly 2D crystals with strong covalent in-plane bonds and weak van der Waals interaction between the layers with a variety of different electronic, optical and mechanical properties. A very prominent class of 2D materials are transition metal di… ▽ More The investigation of 2D van der Waals (vdW) materials is a vibrant, fast moving and still growing interdisciplinary area of research. 2D vdW materials are truly 2D crystals with strong covalent in-plane bonds and weak van der Waals interaction between the layers with a variety of different electronic, optical and mechanical properties. A very prominent class of 2D materials are transition metal dichalcogenides (TMDs) and amongst them particularly the semiconducting subclass. Their properties include bandgaps in the near-infrared to the visible range, decent charge carrier mobility together with high (photo-)catalytic and mechanical stability and exotic many body phenomena. These characteristics make the materials highly attractive for both fundamental research as well as innovative device applications. Furthermore, the materials exhibit a strong light matter interaction providing a high sun light absorbance of up to 15% in the monolayer limit, strong scattering cross section in Raman experiments and access to excitonic phenomena in vdW heterostructures. This review focuses on the light matter interaction in MoS2, WS2, MoSe2, and WSe2 that is dictated by the materials complex dielectric functions and on the multiplicity of studying the first order phonon modes by Raman spectroscopy to gain access to several material properties such as do**, strain, defects and temperature. 2D materials provide an interesting platform to stack them into vdW heterostructures without the limitation of lattice mismatch resulting in novel devices for application but also to study exotic many body interaction phenomena such as interlayer excitons. Future perspectives of semiconducting TMDs and their heterostructures for applications in optoelectronic devices will be examined and routes to study emergent fundamental problems and many-body quantum phenomena under excitations with photons will be discussed. △ Less

Submitted 16 November, 2016; originally announced November 2016.

Comments: 30 pages, 11 figures

Overflow of a dipolar exciton trap at high magnetic fields

Authors: S. Dietl, K. Kowalik-Seidl, D. Schuh, W. Wegscheider, A. W. Holleitner, U. Wurstbauer

Abstract: We study laterally trapped dipolar exciton ensembles in coupled GaAs quantum wells at high magnetic fields in the Faraday configuration. In photoluminescence experiments, we identify three magnetic field regimes. At low fields, the exciton density is increased by a reduced charge carrier escape from the trap, and additionally, the excitons' emission energy is corrected by a positive diamagnetic sh… ▽ More We study laterally trapped dipolar exciton ensembles in coupled GaAs quantum wells at high magnetic fields in the Faraday configuration. In photoluminescence experiments, we identify three magnetic field regimes. At low fields, the exciton density is increased by a reduced charge carrier escape from the trap, and additionally, the excitons' emission energy is corrected by a positive diamagnetic shift. At intermediate fields, magnetic field dependent correction terms apply which follow the characteristics of a neutral magnetoexciton. Due to a combined effect of an increasing binding energy and lifetime, the exciton density is roughly doubled from zero to about seven Tesla. At the latter high field value, the charge carriers occupy only the lowest Landau level. In this situation, the exciton trap can overflow independently from the electrostatic depth of the trap** potential, and the energy shift of the excitons caused by the so-called quantum confined Stark effect is effectively compensated. Instead, the exciton energetics seem to be driven by the magnetic field dependent renormalization of the many-body interaction terms. In this regime, the impact of parasitic in-plane fields at the edge of trap** potential is eliminated. △ Less

Submitted 16 November, 2016; originally announced November 2016.

Comments: 18 pages, 4 figures

Imaging Spectroscopic Ellipsometry of Mono- and Few-layer MoS2

Authors: S. Funke, B. Miller, E. Parzinger, P. Thiesen, A. W. Holleitner, U. Wurstbauer

Abstract: Micromechanically exfoliated mono- and multilayers of molybdenum disulfide (MoS2) are investigated by spectroscopic imaging ellipsometry. In combination with knife edge illumination, MoS2 flakes can be detected and classified on arbitrary flat and also transparent substrates with a lateral resolution down to 1 to 2 um. The complex dielectric functions from mono- and trilayer MoS2 are presented. Th… ▽ More Micromechanically exfoliated mono- and multilayers of molybdenum disulfide (MoS2) are investigated by spectroscopic imaging ellipsometry. In combination with knife edge illumination, MoS2 flakes can be detected and classified on arbitrary flat and also transparent substrates with a lateral resolution down to 1 to 2 um. The complex dielectric functions from mono- and trilayer MoS2 are presented. They are extracted from a multilayer model to fit the measured ellipsometric angles employing an anisotropic and an isotropic fit approach. We find that the energies of the critical points of the optical constants can be treated to be independent of the utilized model, whereas the magnitude of the optical constants varies with the used model. The anisotropic model suggests a maximum absorbance for a MoS2 sheet supported by sapphire of about 14 % for monolayer and of 10 % for trilayer MoS2. Furthermore, the lateral homogeneity of the complex dielectric function for monolayer MoS2 is investigated with a spatial resolution of 2 um. Only minor fluctuations are observed. No evidence for strain, for a significant amount of disorder or lattice defects can be found in the wrinkle-free regions of the MoS2 monolayer from complementary Raman spectroscopy measurements. We assume that the minor lateral variation in the optical constants are caused by lateral modification in the van der Waals interaction presumably caused by the preparation using micromechanical exfoliation and viscoelastic stam**. △ Less

Submitted 16 November, 2016; v1 submitted 21 March, 2016; originally announced March 2016.

Comments: Manuscript and Supplementary Material

Journal ref: J. Phys.: Condens. Matter 28 (2016) 385301

Optical emission spectroscopy study of competing phases of electrons in the second Landau level

Authors: A. L. Levy, U. Wurstbauer, Y. Y. Kuznetsova, A. Pinczuk, L. N. Pfeiffer, K. W. West, M. J. Manfra, G. C. Gardner, J. D. Watson

Abstract: Quantum phases of electrons in the filling factor range $2 \leqν\leq 3$ are probed by the weak optical emission from the partially populated second Landau level and spin wave measurements. Observations of optical emission include a multiplet of sharp peaks that exhibit a strong filling factor dependence. Spin wave measurements by resonant inelastic light scattering probe breaking of spin rotationa… ▽ More Quantum phases of electrons in the filling factor range $2 \leqν\leq 3$ are probed by the weak optical emission from the partially populated second Landau level and spin wave measurements. Observations of optical emission include a multiplet of sharp peaks that exhibit a strong filling factor dependence. Spin wave measurements by resonant inelastic light scattering probe breaking of spin rotational invariance and are used to link this optical emission with collective phases of electrons. A remarkably rapid interplay between emission peak intensities manifests phase competition in the second Landau level. △ Less

Submitted 15 December, 2015; originally announced December 2015.

Journal ref: Phys. Rev. Lett. 116, 016801 (2016)

Gapped Excitations of unconventional FQHE states in the Second Landau Level

Authors: U. Wurstbauer, A. L. Levy, A. Pinczuk, K. W. West, L. N. Pfeiffer, M. J. Manfra, G. C. Gardner, J. D. Watson

Abstract: We report the observation of low-lying collective charge and spin excitations in the second Landau level at ν = 2 + 1/3 and also for the very fragile states at ν = 2 + 2/5, 2 + 3/8 in inelastic light scattering experiments. These modes exhibit a clear dependence on filling factor and temperature substantiating the unique access to the characteristic neutral excitation spectra of the incompressible… ▽ More We report the observation of low-lying collective charge and spin excitations in the second Landau level at ν = 2 + 1/3 and also for the very fragile states at ν = 2 + 2/5, 2 + 3/8 in inelastic light scattering experiments. These modes exhibit a clear dependence on filling factor and temperature substantiating the unique access to the characteristic neutral excitation spectra of the incompressible FQHE states. A detailed mode analysis reveals low energy modes at around 70 μeV and a sharp mode slightly below the Zeeman energy interpreted as gap and spin wave excitation, respectively. The lowest energy collective charge excitation spectrum at ν = 2 + 1/3 exhibits significant similarities and a universal scaling of the energies with its cousin state in the lowest Landau level at ν = 1/3 suggesting similar underlying physics. The observed excitation spectra facilitate to distinguish between theoretical descriptions of the nature of those FQHE states. A striking polarization dependence in light scattering is discussed in the framework of anisotropic electron phases that allow for the stabilization of nematic FQHE states. △ Less

Submitted 5 October, 2015; v1 submitted 17 July, 2015; originally announced July 2015.

Journal ref: Phys. Rev. B 92, 241407 (2015)

Photogating of mono- and few-layer MoS2

Authors: Bastian Miller, Eric Parzinger, Anna Vernickel, Alexander W. Holleitner, Ursula Wurstbauer

Abstract: We describe a photogating effect in mono- and few-layer MoS2, which allows the control of the charge carrier density by almost two orders of magnitude without electrical contacts. Our Raman studies are consistent with physisorbed environmental molecules, that effectively deplete the intrinsically n-doped charge carrier system via charge transfer, and which can be gradually removed by the exposure… ▽ More We describe a photogating effect in mono- and few-layer MoS2, which allows the control of the charge carrier density by almost two orders of magnitude without electrical contacts. Our Raman studies are consistent with physisorbed environmental molecules, that effectively deplete the intrinsically n-doped charge carrier system via charge transfer, and which can be gradually removed by the exposure to light. This photogating process is reversible and precisely tunable by the light intensity. The photogating efficiency is quantified by comparison with measurements on electrostatically gated MoS2. △ Less

Submitted 2 March, 2015; originally announced March 2015.

Journal ref: Appl. Phys. Lett. 106, 122103 (2015)

Confocal shift interferometry of coherent emission from trapped dipolar excitons

Authors: Jens Repp, Georg J. Schinner, Enrico Schubert, Ashish K. Rai, Dirk Reuter, Andreas D. Wieck, Ursula Wurstbauer, Joerg P. Kotthaus, Alexander W. Holleitner

Abstract: We introduce a confocal shift-interferometer based on optical fibers. The presented spectroscopy allows measuring coherence maps of luminescent samples with a high spatial resolution even at cryogenic temperatures. We apply the spectroscopy onto electrostatically trapped, dipolar excitons in a semiconductor double quantum well. We find that the measured spatial coherence length of the excitonic em… ▽ More We introduce a confocal shift-interferometer based on optical fibers. The presented spectroscopy allows measuring coherence maps of luminescent samples with a high spatial resolution even at cryogenic temperatures. We apply the spectroscopy onto electrostatically trapped, dipolar excitons in a semiconductor double quantum well. We find that the measured spatial coherence length of the excitonic emission coincides with the point spread function of the confocal setup. The results are consistent with a temporal coherence of the excitonic emission down to temperatures of 250 mK. △ Less

Submitted 19 November, 2014; originally announced November 2014.

Comments: 5 pages, 3 figures

Fractionally charged skyrmions in fractional quantum Hall effect

Authors: Ajit C. Balram, U. Wurstbauer, A. Wójs, A. Pinczuk, J. K. Jain

Abstract: The fractional quantum Hall effect has inspired searches for exotic emergent topological particles, such as fractionally charged excitations, composite fermions, abelian and nonabelian anyons and Majorana fermions. Fractionally charged skyrmions, which support both topological charge and topological vortex-like spin structure, have also been predicted to occur in the vicinity of 1/3 filling of the… ▽ More The fractional quantum Hall effect has inspired searches for exotic emergent topological particles, such as fractionally charged excitations, composite fermions, abelian and nonabelian anyons and Majorana fermions. Fractionally charged skyrmions, which support both topological charge and topological vortex-like spin structure, have also been predicted to occur in the vicinity of 1/3 filling of the lowest Landau level. The fractional skyrmions, however, are anticipated to be exceedingly fragile, suppressed by very small Zeeman energies. Here we show that, slightly away from 1/3 filling, the smallest manifestations of the fractional skyrmion exist in the excitation spectrum for a broad range of Zeeman energies, and appear in resonant inelastic light scattering experiments as well-defined resonances slightly below the long wavelength spin wave mode. The spectroscopy of these exotic bound states serves as a sensitive tool for investigating the residual interaction between composite fermions, responsible for delicate new fractional quantum Hall states in this filling factor region. △ Less

Submitted 26 November, 2015; v1 submitted 16 June, 2014; originally announced June 2014.

Comments: 9 pages, 8 figures

Journal ref: Nature Communications 6, Article number: 8981 (2015)

Spin-polarized electric currents in diluted magnetic semiconductor heterostructures induced by terahertz and microwave radiation

Authors: P. Olbrich, C. Zoth, P. Lutz, C. Drexler, V. V. Bel'kov, Ya. V. Terent'ev, S. A. Tarasenko, A. N. Semenov, S. V. Ivanov, D. R. Yakovlev, T. Wojtowicz, U. Wurstbauer, D. Schuh, S. D. Ganichev

Abstract: We report on the study of spin-polarized electric currents in diluted magnetic semiconductor (DMS) quantum wells subjected to an in-plane external magnetic field and illuminated by microwave or terahertz radiation. The effect is studied in (Cd,Mn)Te/(Cd,Mg)Te quantum wells (QWs) and (In,Ga)As/InAlAs:Mn QWs belonging to the well known II-VI and III-V DMS material systems, as well as, in heterovalen… ▽ More We report on the study of spin-polarized electric currents in diluted magnetic semiconductor (DMS) quantum wells subjected to an in-plane external magnetic field and illuminated by microwave or terahertz radiation. The effect is studied in (Cd,Mn)Te/(Cd,Mg)Te quantum wells (QWs) and (In,Ga)As/InAlAs:Mn QWs belonging to the well known II-VI and III-V DMS material systems, as well as, in heterovalent AlSb/InAs/(Zn,Mn)Te QWs which represent a promising combination of II-VI and III-V semiconductors. Experimental data and developed theory demonstrate that the photocurrent originates from a spin-dependent scattering of free carriers by static defects or phonons in the Drude absorption of radiation and subsequent relaxation of carriers. We show that in DMS structures the efficiency of the current generation is drastically enhanced compared to non-magnetic semiconductors. The enhancement is caused by the exchange interaction of carrier spins with localized spins of magnetic ions resulting, on the one hand, in the giant Zeeman spin-splitting, and, on the other hand, in the spin-dependent carrier scattering by localized Mn2+ ions polarized by an external magnetic field. △ Less

Submitted 27 April, 2012; originally announced April 2012.

Comments: 14 pages, 13 figures

Experimental evidence of low-lying gapped excitations in the quantum fluid at nu=5/2

Authors: U. Wurstbauer, K. W. West, L. N. Pfeiffer, A. Pinczuk

Abstract: The low-lying neutral excitation spectrum of the incompressible quantum Hall fluid at $ν=5/2$ is investigated by inelastic light scattering. Gapped modes are observable only in a very narrow filling factor range centered at 5/2 at energies that overlap estimates from transport activation gaps. The modes are interpreted as critical points in the wave-vector dispersion of excitations that preserve s… ▽ More The low-lying neutral excitation spectrum of the incompressible quantum Hall fluid at $ν=5/2$ is investigated by inelastic light scattering. Gapped modes are observable only in a very narrow filling factor range centered at 5/2 at energies that overlap estimates from transport activation gaps. The modes are interpreted as critical points in the wave-vector dispersion of excitations that preserve spin orientation. For very small changes $|δν|\lesssim 0.01$ the gapped modes disappear and a continuum of low-lying excitations takes over indicating the transition from an incompressible fluid at 5/2 to a compressible state. Observations of spin wave modes indicate spin polarization of the 5/2 and 2+1/3 quantum Hall fluids. △ Less

Submitted 20 April, 2012; originally announced April 2012.

Comments: 4 pages, 3 figures

Graphene growth on h-BN by Molecular Beam Epitaxy

Authors: Jorge M. Garcia, Ulrich Wurstbauer, Antonio Levy, Loren N. Pfeiffer, Aron Pinczuk, Annette S. Plaut, Lei Wang, Cory R. Dean, Roberto Buizza, Arend M. Van Der Zande, James Hone, Kenji Watanabe, Takashi Taniguchi

Abstract: The growth of single layer graphene nanometer size domains by solid carbon source molecular beam epitaxy on hexagonal boron nitride (h-BN) flakes is demonstrated. Formation of single-layer graphene is clearly apparent in Raman spectra which display sharp optical phonon bands. Atomic-force microscope images and Raman maps reveal that the graphene grown depends on the surface morphology of the h-BN… ▽ More The growth of single layer graphene nanometer size domains by solid carbon source molecular beam epitaxy on hexagonal boron nitride (h-BN) flakes is demonstrated. Formation of single-layer graphene is clearly apparent in Raman spectra which display sharp optical phonon bands. Atomic-force microscope images and Raman maps reveal that the graphene grown depends on the surface morphology of the h-BN substrates. The growth is governed by the high mobility of the carbon atoms on the h-BN surface, in a manner that is consistent with van der Waals epitaxy. The successful growth of graphene layers depends on the substrate temperature, but is independent of the incident flux of carbon atoms. △ Less

Submitted 22 April, 2012; v1 submitted 11 April, 2012; originally announced April 2012.

Comments: Solid State Communications, 2012

Molecular beam growth of graphene nanocrystals on dielectric substrates

Authors: Ulrich Wurstbauer, Theanne Schiros, Cherno Jaye, Annette S. Plaut, Rui He, Albert Rigosi, Christopher Gutiérrez, Daniel Fischer, Loren N. Pfeiffer, Abhay N. Pasupathy, Aron Pinczuk, Jorge M. García

Abstract: We demonstrate the growth of graphene nanocrystals by molecular beam methods that employ a solid carbon source, and that can be used on a diverse class of large area dielectric substrates. Characterization by Raman and Near Edge X-ray Absorption Fine Structure spectroscopies reveal a sp2 hybridized hexagonal carbon lattice in the nanocrystals. Lower growth rates favor the formation of higher quali… ▽ More We demonstrate the growth of graphene nanocrystals by molecular beam methods that employ a solid carbon source, and that can be used on a diverse class of large area dielectric substrates. Characterization by Raman and Near Edge X-ray Absorption Fine Structure spectroscopies reveal a sp2 hybridized hexagonal carbon lattice in the nanocrystals. Lower growth rates favor the formation of higher quality, larger size multi-layer graphene crystallites on all investigated substrates. The surface morphology is determined by the roughness of the underlying substrate and graphitic monolayer steps are observed by ambient scanning tunneling microscopy. △ Less

Submitted 18 June, 2012; v1 submitted 13 February, 2012; originally announced February 2012.

Comments: Accepted in Carbon; Discussion section added; 20 pages, 6 figures (1 updated)

Observation of non-conventional spin waves in composite fermion ferromagnets

Authors: U. Wurstbauer, S. S. Mandal, D. Majumder, I. Dujovne, T. D. Rhone, B. S. Dennis, A. F. Rigosi, J. K. Jain, A. Pinczuk, K. W. West, L. N. Pfeiffer

Abstract: We find unexpected low energy excitations of fully spin-polarized composite-fermion ferromagnets in the fractional quantum Hall liquid, resulting from a complex interplay between a topological order manifesting through new energy levels and a magnetic order due to spin polarization. The lowest energy modes, which involve spin reversal, are remarkable in displaying unconventional negative dispersio… ▽ More We find unexpected low energy excitations of fully spin-polarized composite-fermion ferromagnets in the fractional quantum Hall liquid, resulting from a complex interplay between a topological order manifesting through new energy levels and a magnetic order due to spin polarization. The lowest energy modes, which involve spin reversal, are remarkable in displaying unconventional negative dispersion at small momenta followed by a deep roton minimum at larger momenta. This behavior results from a nontrivial mixing of spin-wave and spin-flip modes creating a spin-flip excitonic state of composite-fermion particle-hole pairs. The striking properties of spin-flip excitons imply highly tunable mode couplings that enable fine control of topological states of itinerant two-dimensional ferromagnets. △ Less

Submitted 14 August, 2011; originally announced August 2011.

Comments: 4 pages, 4 figures

Journal ref: Phys.Rev.Lett.107:066804,2011

Hysteretic magnetoresistance and thermal bistability in a magnetic two-dimensional hole system

Authors: Ursula Wurstbauer, Cezary Śliwa, Dieter Weiss, Tomasz Dietl, Werner Wegscheider

Abstract: Colossal negative magnetoresistance and the associated field-induced insulator-to-metal transition, the most characteristic features of magnetic semiconductors, are observed in n-type rare earth oxides and chalcogenides, p-type manganites, n-type and p-type diluted magnetic semiconductors (DMS) as well as in quantum wells of n-type DMS. Here, we report on magnetostransport studies of Mn modulation… ▽ More Colossal negative magnetoresistance and the associated field-induced insulator-to-metal transition, the most characteristic features of magnetic semiconductors, are observed in n-type rare earth oxides and chalcogenides, p-type manganites, n-type and p-type diluted magnetic semiconductors (DMS) as well as in quantum wells of n-type DMS. Here, we report on magnetostransport studies of Mn modulation-doped InAs quantum wells, which reveal a magnetic field driven and bias voltage dependent insulator-to-metal transition with abrupt and hysteretic changes of resistance over several orders of magnitude. These phenomena coexist with the quantised Hall effect in high magnetic fields. We show that the exchange coupling between a hole and the parent Mn acceptor produces a magnetic anisotropy barrier that shifts the spin relaxation time of the bound hole to a 100 s range in compressively strained quantum wells. This bistability of the individual Mn acceptors explains the hysteretic behaviour while opening prospects for information storing and processing. At high bias voltage another bistability, caused by the overheating of electrons10, gives rise to abrupt resistance jumps. △ Less

Submitted 28 June, 2011; originally announced June 2011.

Journal ref: Nature Physics 6, 955-959 (2010)

Imaging ellipsometry of graphene

Authors: Ulrich Wurstbauer, Christian Röling, Ursula Wurstbauer, Werner Wegscheider, Matthias Vaupel, Peter H. Thiesen, Dieter Weiss

Abstract: Imaging ellipsometry studies of graphene on SiO2/Si and crystalline GaAs are presented. We demonstrate that imaging ellipsometry is a powerful tool to detect and characterize graphene on any flat substrate. Variable angle spectroscopic ellipsometry is used to explore the dispersion of the optical constants of graphene in the visible range with high lateral resolution. In this way the influence of… ▽ More Imaging ellipsometry studies of graphene on SiO2/Si and crystalline GaAs are presented. We demonstrate that imaging ellipsometry is a powerful tool to detect and characterize graphene on any flat substrate. Variable angle spectroscopic ellipsometry is used to explore the dispersion of the optical constants of graphene in the visible range with high lateral resolution. In this way the influence of the substrate on graphene's optical properties can be investigated △ Less

Submitted 18 August, 2010; originally announced August 2010.

Comments: 3 pages, 3 figures

Circular ac Hall Effect

Authors: J. Karch, P. Olbrich, M. Schmalzbauer, C. Zoth, C. Brinsteiner, M. Fehrenbacher, U. Wurstbauer, M. M. Glazov, S. A. Tarasenko, E. L. Ivchenko, D. Weiss, J. Eroms, R. Yakimova, S. Lara-Avila, S. Kubatkin, S. D. Ganichev

Abstract: We report the observation of the circular ac Hall effect where the current is solely driven by the crossed ac electric and magnetic fields of circularly polarized radiation. Illuminating an unbiased monolayer sheet of graphene with circularly polarized terahertz radiation at room temperature generates - under oblique incidence - an electric current perpendicular to the plane of incidence, whose si… ▽ More We report the observation of the circular ac Hall effect where the current is solely driven by the crossed ac electric and magnetic fields of circularly polarized radiation. Illuminating an unbiased monolayer sheet of graphene with circularly polarized terahertz radiation at room temperature generates - under oblique incidence - an electric current perpendicular to the plane of incidence, whose sign is reversed by switching the radiation helicity. Alike the classical dc Hall effect, the voltage is caused by crossed electric and magnetic fields which are however rotating with the light's frequency. △ Less

Submitted 12 August, 2010; originally announced August 2010.

Comments: 4 pages, 5 figures

Photon helicity driven electric currents in graphene

Authors: J. Karch, P. Olbrich, M. Schmalzbauer, C. Brinsteiner, U. Wurstbauer, M. M. Glazov, S. A. Tarasenko, E. L. Ivchenko, D. Weiss, J. Eroms, S. D. Ganichev

Abstract: We report on the observation of photon helicity driven currents in graphene. The directed net electric current is generated in single layer graphene by circularly polarized terahertz laser radiation at normal as well as at oblique incidence and changes its sign upon reversing the radiation helicity. The phenomenological and microscopic theories of the observed photocurrents are developed. We dem… ▽ More We report on the observation of photon helicity driven currents in graphene. The directed net electric current is generated in single layer graphene by circularly polarized terahertz laser radiation at normal as well as at oblique incidence and changes its sign upon reversing the radiation helicity. The phenomenological and microscopic theories of the observed photocurrents are developed. We demonstrate that under oblique incidence the current is caused by the circular photon drag effect in the interior of graphene sheet. By contrast, the effect at normal incidence stems from the sample edges, which reduce the symmetry and result in an asymmetric scattering of carriers driven by the radiation field. Besides a photon helicity dependent current we also observe photocurrents in response to linearly polarized radiation. The microscopic mechanisms governing this effect are discussed. △ Less

Submitted 4 February, 2010; originally announced February 2010.

Comments: 13 pages, 7 figures

Magnetic anisotropy of epitaxial (Ga,Mn)As on (113)A GaAs

Authors: Wiktor Stefanowicz, Cezary Śliwa, Pavlo Aleshkevych, Tomasz Dietl, Matthias Döppe, Ursula Wurstbauer, Werner Wegscheider, Dieter Weiss, Maciej Sawicki

Abstract: The temperature dependence of magnetic anisotropy in (113)A (Ga,Mn)As layers grown by molecular beam epitaxy is studied by means of superconducting quantum interference device (SQUID) magnetometry as well as by ferromagnetic resonance (FMR) and magnetooptical effects. Experimental results are described considering cubic and two kinds of uniaxial magnetic anisotropy. The magnitude of cubic and un… ▽ More The temperature dependence of magnetic anisotropy in (113)A (Ga,Mn)As layers grown by molecular beam epitaxy is studied by means of superconducting quantum interference device (SQUID) magnetometry as well as by ferromagnetic resonance (FMR) and magnetooptical effects. Experimental results are described considering cubic and two kinds of uniaxial magnetic anisotropy. The magnitude of cubic and uniaxial anisotropy constants is found to be proportional to the fourth and second power of saturation magnetization, respectively. Similarly to the case of (001) samples, the spin reorientation transition from uniaxial anisotropy with the easy along the [-1, 1, 0] direction at high temperatures to the biaxial <100> anisotropy at low temperatures is observed around 25 K. The determined values of the anisotropy constants have been confirmed by FMR studies. As evidenced by investigations of the polar magnetooptical Kerr effect, the particular combination of magnetic anisotropies allows the out-of-plane component of magnetization to be reversed by an in-plane magnetic field. Theoretical calculations within the p-d Zener model explain the magnitude of the out-of-plane uniaxial anisotropy constant caused by epitaxial strain, but do not explain satisfactorily the cubic anisotropy constant. At the same time the findings point to the presence of an additional uniaxial anisotropy of unknown origin. Similarly to the case of (001) films, this additional anisotropy can be explained by assuming the existence of a shear strain. However, in contrast to the (001) samples, this additional strain has an out-of-the-(001)-plane character. △ Less

Submitted 8 February, 2010; v1 submitted 2 February, 2010; originally announced February 2010.

Comments: 13 pages, 9 figures

Journal ref: Phys. Rev. B 81, 155203 (2010)

Anomalous magnetotransport and cyclotron resonance of high mobility magnetic 2DHGs in the quantum Hall regime

Authors: U. Wurstbauer, S. Knott, C. G. v. Westarp, N. Mecking, K. Rachor, D. Heitmann, W. Wegscheider, W. Hansen

Abstract: Low temperature magnetotransport measurements and far infrared transmission spectroscopy are reported in molecular beam epitaxial grown two-dimensional hole systems confined in strained InAs quantum wells with magnetic impurities in the channel. The interactions of the free holes spin with the magnetic moment of 5/2 provided by manganese features intriguing localization phenomena and anomalies i… ▽ More Low temperature magnetotransport measurements and far infrared transmission spectroscopy are reported in molecular beam epitaxial grown two-dimensional hole systems confined in strained InAs quantum wells with magnetic impurities in the channel. The interactions of the free holes spin with the magnetic moment of 5/2 provided by manganese features intriguing localization phenomena and anomalies in the Hall and the quantum Hall resistance. In magnetic field dependent far infrared spectroscopy measurements well pronounced cyclotron resonance and an additional resonance are found that indicates an anticrossing with the cyclotron resonance. △ Less

Submitted 7 September, 2009; originally announced September 2009.

Tunneling Anisotropic Spin Polarization in lateral (Ga,Mn)As/GaAs spin Esaki diode devices

Authors: Andreas Einwanger, Mariusz Ciorga, Ursula Wurstbauer, Dieter Schuh, Werner Wegscheider, Dieter Weiss

Abstract: We report here on anisotropy of spin polarization obtained in lateral all-semiconductor all-electrical spin injection devices, employing $p^{+}-$(Ga,Mn)As/$n^{+}-$GaAs Esaki diode structures as spin aligning contacts, resulting from the dependence of the efficiency of spin tunneling on the orientation of spins with respect to different crystallographic directions. We observed an in-plane anisotr… ▽ More We report here on anisotropy of spin polarization obtained in lateral all-semiconductor all-electrical spin injection devices, employing $p^{+}-$(Ga,Mn)As/$n^{+}-$GaAs Esaki diode structures as spin aligning contacts, resulting from the dependence of the efficiency of spin tunneling on the orientation of spins with respect to different crystallographic directions. We observed an in-plane anisotropy of $~8%$ in case of spins oriented either along $[1\bar{1}0]$ or $[110]$ directions and $~25%$ anisotropy between in-plane and perpendicular-to-plane orientation of spins. △ Less

Submitted 7 July, 2009; originally announced July 2009.

Comments: 9 pages, 3 figures

All electrical measurement of the density of states in (Ga,Mn)As

Authors: D. Neumaier, M. Turek, U. Wurstbauer, A. Vogl, M. Utz, W. Wegscheider, D. Weiss

Abstract: We report on electrical measurements of the effective density of states in the ferromagnetic semiconductor material (Ga,Mn)As. By analyzing the conductivity correction due to enhanced electron-electron interaction the electrical diffusion constant was extracted for (Ga,Mn)As samples of different dimensionality. Using the Einstein relation allows to deduce the effective density of states of (Ga,M… ▽ More We report on electrical measurements of the effective density of states in the ferromagnetic semiconductor material (Ga,Mn)As. By analyzing the conductivity correction due to enhanced electron-electron interaction the electrical diffusion constant was extracted for (Ga,Mn)As samples of different dimensionality. Using the Einstein relation allows to deduce the effective density of states of (Ga,Mn)As at the Fermi energy. △ Less

Submitted 16 February, 2009; originally announced February 2009.

Manganese-diffusion-induced n-do** in semiconductor structures containing Ga(Mn)As layers

Authors: T. Korn, R. Schulz, S. Fehringer, U. Wurstbauer, D. Schuh, W. Wegscheider, M. W. Wu, C. Schüller

Abstract: Semiconductor structures using ferromagnetic semiconductors as spin injectors are promising systems for future spintronic devices. Here, we present combined photoluminescence (PL) and time-resolved magneto-optical experiments of a nominally nonmagnetic quantum well(QW) separated by a thin barrier from a ferromagnetic Ga(Mn)As layer. Due to the partial quenching of the PL, we conclude that there… ▽ More Semiconductor structures using ferromagnetic semiconductors as spin injectors are promising systems for future spintronic devices. Here, we present combined photoluminescence (PL) and time-resolved magneto-optical experiments of a nominally nonmagnetic quantum well(QW) separated by a thin barrier from a ferromagnetic Ga(Mn)As layer. Due to the partial quenching of the PL, we conclude that there is a significant Mn backdiffusion into the QW. Moreover, from the time-resolved measurements, we infer that the Mn leads to n-type do** within the QW, and, in addition, strongly increases the electron spin dephasing time. △ Less

Submitted 12 November, 2008; v1 submitted 22 September, 2008; originally announced September 2008.

Comments: 4 pages, 4 figures

Electrical spin injection and detection in lateral all-semiconductor devices

Authors: Mariusz Ciorga, Andreas Einwanger, Ursula Wurstbauer, Dieter Schuh, Werner Wegscheider, Dieter Weiss

Abstract: Electrical injection and detection of spin-polarized electrons is demonstrated for the first time in a single wafer, all-semiconductor, GaAs-based lateral spintronic device, employing p+-(Ga,Mn)As/n+-GaAs ferromagnetic Esaki diodes as spin aligning contacts. The conversion of spin-polarized holes into spin-polarized electrons via Esaki tunnelling leaves its mark in a bias dependence of the spin-… ▽ More Electrical injection and detection of spin-polarized electrons is demonstrated for the first time in a single wafer, all-semiconductor, GaAs-based lateral spintronic device, employing p+-(Ga,Mn)As/n+-GaAs ferromagnetic Esaki diodes as spin aligning contacts. The conversion of spin-polarized holes into spin-polarized electrons via Esaki tunnelling leaves its mark in a bias dependence of the spin-injection efficiency, which at maximum reaches the relatively high value of 50%. △ Less

Submitted 10 September, 2008; originally announced September 2008.

Comments: 11 pages, 3 figures, sent to PRL