Showing 1–50 of 74 results for author: Wunderlich, J

Terahertz spin ratchet effect in magnetic metamaterials

Authors: M. Hild, L. E. Golub, A. Fuhrmann, M. Otteneder, M. Kronseder, M. Matsubara, T. Kobayashi, D. Oshima, A. Honda, T. Kato, J. Wunderlich, C. Back, S. D. Ganichev

Abstract: We report on spin ratchet currents driven by terahertz radiation electric fields in a Co/Pt magnetic metamaterial formed by triangle-shaped holes forming an antidots lattice and subjected to an external magnetic field applied perpendicularly to the metal film plane. We show that for a radiation wavelength substantially larger than the period of the antidots array the radiation causes a polarizatio… ▽ More We report on spin ratchet currents driven by terahertz radiation electric fields in a Co/Pt magnetic metamaterial formed by triangle-shaped holes forming an antidots lattice and subjected to an external magnetic field applied perpendicularly to the metal film plane. We show that for a radiation wavelength substantially larger than the period of the antidots array the radiation causes a polarization-independent spin-polarized ratchet current. The current is generated by the periodic asymmetric radiation intensity distribution caused by the near-field diffraction at the edges of the antidots, which induces spatially inhomogeneous periodic electron gas heating, and a phase-shifted periodic asymmetric electrostatic force. The developed microscopic theory shows that the magnetization of the Co/Pt film results in a spin ratchet current caused by both the anomalous Hall and the anomalous Nernst effects. Additionally, we observed a polarization-dependent trigonal spin photocurrent, which is caused by the scattering of electrons at the antidot boundaries resulting in a spin-polarized current due to the magnetization. Microscopic theory of these effects reveals that the trigonal photocurrent is generated at the boundaries of the triangle antidots, whereas the spin ratchet is generated due to the spatially periodic temperature gradient over the whole film. This difference causes substantially different hysteresis widths of these two currents. △ Less

Submitted 16 January, 2023; originally announced January 2023.

Comments: 16 pages, 13 figures

Anomalous Nernst effect in Mn$_3$NiN thin films

Authors: Sebastian Beckert, João Godinho, Freya Johnson, Jozef Kimák, Eva Schmoranzerová, Jan Zemen, Zbyněk Šobáň, Kamil Olejník, Jakub Železný, Joerg Wunderlich, Petr Němec, Dominik Kriegner, Andy Thomas, Sebastian T. B. Goennenwein, Lesley F Cohen, Helena Reichlová

Abstract: The observation of a sizable anomalous Hall effect in magnetic materials with vanishing magnetization has renewed interest in understanding and engineering this phenomenon. Antiferromagnetic antiperovskites are one of emerging material classes that exhibit a variety of interesting properties owing to a complex electronic band structure and magnetic ordering. Reports on the anomalous Nernst effect… ▽ More The observation of a sizable anomalous Hall effect in magnetic materials with vanishing magnetization has renewed interest in understanding and engineering this phenomenon. Antiferromagnetic antiperovskites are one of emerging material classes that exhibit a variety of interesting properties owing to a complex electronic band structure and magnetic ordering. Reports on the anomalous Nernst effect and its magnitude in this class of materials are, however, very limited. This scarcity may be partly due to the experimental difficulty of reliably quantifying the anomalous Nernst coefficient. Here, we report experiments on the anomalous Nernst effect in antiferromagnetic antiperovskite Mn$_3$NiN thin films. Measurement of both the anomalous Hall and Nernst effects using the same sample and measurement geometry makes it possible to directly compare these two effects and quantify the anomalous Nernst coefficient and conductivity in Mn$_3$NiN. We carefully evaluate the spatial distribution of the thermal gradient in the sample and use finite element modeling to corroborate our experimental results. △ Less

Submitted 5 December, 2022; originally announced December 2022.

Ultrashort spin-orbit torque generated by femtosecond laser pulses

Authors: T. Janda, T. Ostatnicky, P. Nemec, E. Schmoranzerova, R. Campion, V. Hills, V. Novak, Z. Soban, J. Wunderlich

Abstract: To realize the very objective of spintronics, namely the development of ultra-high frequency and energy-efficient electronic devices, an ultrafast and scalable approach to switch magnetic bits is required. Magnetization switching with spin currents generated by the spin-orbit interaction at ferromagnetic/non-magnetic interfaces is one of such scalable approaches, where the ultimate switching speed… ▽ More To realize the very objective of spintronics, namely the development of ultra-high frequency and energy-efficient electronic devices, an ultrafast and scalable approach to switch magnetic bits is required. Magnetization switching with spin currents generated by the spin-orbit interaction at ferromagnetic/non-magnetic interfaces is one of such scalable approaches, where the ultimate switching speed is limited by the Larmor precession frequency. Understanding the magnetization precession dynamics induced by spin-orbit torques (SOTs) is therefore of great importance. Here we demonstrate generation of ultrashort SOT pulses that excite Larmor precession at an epitaxial Fe/GaAs interface by converting femtosecond laser pulses into high-amplitude current pulses in an electrically biased p-i-n photodiode. We control the polarity, amplitude, and duration of the current pulses and, most importantly, also their propagation direction with respect to the crystal orientation. The SOT origin of the excited Larmor precession was revealed by a detailed analysis of the precession phase and amplitude at different experimental conditions. △ Less

Submitted 25 August, 2022; originally announced August 2022.

Comments: 14 pages, 4 figures

Identifying the octupole Antiferromagnetic domain orientation in Mn$_{3}$NiN by scanning Anomalous Nernst Effect microscopy

Authors: F. Johnson, J. Kimák, J. Zemen, Z. Šobáň, E. Schmoranzerová, J. Godinho, P. Němec, S. Beckert, H. Reichlová, D. Boldrin, J. Wunderlich, L. F. Cohen

Abstract: The intrinsic anomalous Nernst effect in a magnetic material is governed by the Berry curvature at the Fermi energy and can be realized in non-collinear antiferromagnets with vanishing magnetization. Thin films of (001)-oriented Mn$_{3}$NiN have their chiral antiferromagnetic structure located in the (111) plane facilitating the anomalous Nernst effect unusually in two orthogonal in-plane directio… ▽ More The intrinsic anomalous Nernst effect in a magnetic material is governed by the Berry curvature at the Fermi energy and can be realized in non-collinear antiferromagnets with vanishing magnetization. Thin films of (001)-oriented Mn$_{3}$NiN have their chiral antiferromagnetic structure located in the (111) plane facilitating the anomalous Nernst effect unusually in two orthogonal in-plane directions. The sign of each component of the anomalous Nernst effect is determined by the local antiferromagnetic domain state. In this work, a temperature gradient is induced in a 50 nm thick Mn$_{3}$NiN two micron-size Hall cross by a focused scanning laser beam, and the spatial distribution of the anomalous Nernst voltage is used to image and identify the octupole macrodomain arrangement. Although the focused laser beam width may span many individual domains, cooling from room temperature through the antiferromagnetic transition temperature in an in-plane magnetic field prepares the domain state producing a checkerboard pattern resulting from the convolution of contributions from each domain. These images together with atomistic and micromagnetic simulations suggest an average macrodomain of the order of $1 μm^{2}$. △ Less

Submitted 24 May, 2022; originally announced May 2022.

Comments: 25 pages 4 figures, 6 supplementary figures F.J. and J.K. both contributed equally to this manuscript. The following article has been accepted by Applied Physics Letters. After it is published, it will be found at https://aip.scitation.org/journal/apl

Symmetry effects on the static and dynamic properties of coupled magnetic oscillators

Authors: J P. Patchett, M. Drouhin, J. W. Liao, Z. Soban, D. Petit, J. Haigh, P. Roy, J. Wunderlich, R. P. Cowburn, C. Ciccarelli

Abstract: The effect of symmetry on the resonance spectra of antiferromagnetically coupled oscillators has attracted new interest with the discovery of symmetry-breaking induced anti-crossings. Here, we experimentally characterise the resonance spectrum of a synthetic antiferromagnet Pt/CoFeB/Ru/CoFeB/Pt, where we are able to independently tune the effective magnetisation of the two coupled magnets. To mode… ▽ More The effect of symmetry on the resonance spectra of antiferromagnetically coupled oscillators has attracted new interest with the discovery of symmetry-breaking induced anti-crossings. Here, we experimentally characterise the resonance spectrum of a synthetic antiferromagnet Pt/CoFeB/Ru/CoFeB/Pt, where we are able to independently tune the effective magnetisation of the two coupled magnets. To model our results we apply the mathematical methods of group theory to the solutions of the Landau Lifshitz Gilbert equation. This general approach, usually applied to quantum mechanical systems, allows us to identify the main features of the resonance spectrum in terms of symmetry breaking and to make a direct comparison with crystal antiferromagnets. △ Less

Submitted 17 March, 2022; originally announced April 2022.

Inertial domain wall characterization in layered multisublattice antiferromagnets

Authors: R. Rama-Eiroa, P. E. Roy, J. M. González, K. Y. Guslienko, J. Wunderlich, R. M. Otxoa

Abstract: The motion of a Néel-like ${180}^{\circ}$ domain wall induced by a time-dependent staggered spin-orbit field in the layered collinear antiferromagnet Mn$_2$Au is explored. Through an effective version of the two sublattice nonlinear $σ$-model which does not take into account the antiferromagnetic exchange interaction directed along the tetragonal c-axis, it is possible to replicate accurately the… ▽ More The motion of a Néel-like ${180}^{\circ}$ domain wall induced by a time-dependent staggered spin-orbit field in the layered collinear antiferromagnet Mn$_2$Au is explored. Through an effective version of the two sublattice nonlinear $σ$-model which does not take into account the antiferromagnetic exchange interaction directed along the tetragonal c-axis, it is possible to replicate accurately the relativistic and inertial traces intrinsic to the magnetic texture dynamics obtained through atomistic spin dynamics simulations for quasistatic processes. In the case in which the steady-state magnetic soliton motion is extinguished due to the abrupt shutdown of the external stimulus, its stored relativistic exchange energy is transformed into a complex translational mobility, being the rigid domain wall profile approximation no longer suitable. Although it is not feasible to carry out a detailed follow-up of its temporal evolution in this case, it is possible to predict the inertial-based distance travelled by the domain wall in relation to its steady-state relativistic mass. This exhaustive dynamical characterization for different time-dependent regimes of the driving force is of potential interest in antiferromagnetic domain wall-based device applications. △ Less

Submitted 29 March, 2022; v1 submitted 18 September, 2021; originally announced September 2021.

Magneto-Seebeck microscopy of domain switching in collinear antiferromagnet CuMnAs

Authors: Tomas Janda, Joao Godinho, Tomas Ostatnicky, Emanuel Pfitzner, Georg Ulrich, Arne Hoehl, Sonka Reimers, Zbynek Soban, Thomas Metzger, Helena Reichlova, Vít Novák, Richard Campion, Joachim Heberle, Peter Wadley, Kevin Edmonds, Ollie Amin, Jas Chauhan, Sarnjeet Dhesi, Francesco Maccherozzi, Ruben Otxoa, Pierre Roy, Kamil Olejnik, Petr Němec, Tomas Jungwirth, Bernd Kaestner , et al. (1 additional authors not shown)

Abstract: Antiferromagnets offer spintronic device characteristics unparalleled in ferromagnets owing to their lack of stray fields, THz spin dynamics, and rich materials landscape. Microscopic imaging of aniferromagnetic domains is one of the key prerequisites for understading physical principles of the device operation. However, adapting common magnetometry techniques to the dipolar-field-free antiferroma… ▽ More Antiferromagnets offer spintronic device characteristics unparalleled in ferromagnets owing to their lack of stray fields, THz spin dynamics, and rich materials landscape. Microscopic imaging of aniferromagnetic domains is one of the key prerequisites for understading physical principles of the device operation. However, adapting common magnetometry techniques to the dipolar-field-free antiferromagnets has been a major challenge. Here we demonstrate in a collinear antiferromagnet a thermoelectric detection method by combining the magneto-Seebeck effect with local heat gradients generated by scanning far-field or near-field techniques. In a 20 nm epilayer of uniaxial CuMnAs we observe reversible 180 deg switching of the Néel vector via domain wall displacement, controlled by the polarity of the current pulses. We also image polarity-dependent 90 deg switching of the Néel vector in a thicker biaxial film, and domain shattering induced at higher pulse amplitudes. The antiferromagnetic domain maps obtained by our laboratory technique are compared to measurements by the established synchrotron microscopy using X-ray magnetic linear dichroism. △ Less

Submitted 11 April, 2020; originally announced April 2020.

Journal ref: Phys. Rev. Materials 4, 094413 (2020)

Walker-like Domain Wall breakdown in layered Antiferromagnets driven by staggered spin-orbit fields

Authors: Rubén M. Otxoa, P. E. Roy, R. Rama-Eiroa, K. Y. Giuslienko, J. Wunderlich

Abstract: Within linear continuum theory, no magnetic texture can propagate faster than the maximum group velocity of its spin waves. Here we report a transient regime due to the appearance of additional antiferromagnetic textures that breaks the Lorentz translational invariance of the magnetic system by atomistic spin dynamics simulations. This dynamical regime is akin to domain wall Walker-breakdown in fe… ▽ More Within linear continuum theory, no magnetic texture can propagate faster than the maximum group velocity of its spin waves. Here we report a transient regime due to the appearance of additional antiferromagnetic textures that breaks the Lorentz translational invariance of the magnetic system by atomistic spin dynamics simulations. This dynamical regime is akin to domain wall Walker-breakdown in ferromagnets and involves the nucleation of an antiferromagnetic domain wall pair. Subsequently, one of the nucleated 180$^{\circ}$ domain wall creates with the original domain wall a 360$^{\circ}$ spin-rotation which remains static even under the action of the spin-orbit field. The other 180$^{\circ}$ domain wall becomes accelerated to super-magnonic speeds. Under large spin-orbit fields, multiple domain wall generation and recombination is obtained which may explain the recently experimentally observed current pulse induce shattering of large domain structures into small fragmented domains and the subsequent slow recreation of large-scale domain formation prior current pulse. △ Less

Submitted 9 February, 2020; originally announced February 2020.

Journal ref: Communications Physics, 2020

Quenching of an antiferromagnet into high resistivity states using electrical or ultrashort optical pulses

Authors: Zdeněk Kašpar, Miloslav Surýnek, Jan Zubáč, Filip Krizek, Vít Novák, Richard P. Campion, Martin S. Wörnle, Pietro Gambardella, Xavier Marti, Petr Němec, K. W. Edmonds, S. Reimers, O. J. Amin, F. Maccherozzi, S. S. Dhesi, Peter Wadley, Jörg Wunderlich, Kamil Olejník, Tomáš Jungwirth

Abstract: Ultra-fast dynamics, insensitivity to external magnetic fields, or absence of magnetic stray fields are examples of properties that make antiferromagnets of potential use in the development of spintronic devices. Similar to their ferromagnetic counterparts, antiferromagnets can store information in the orientations of the collective magnetic order vector. However, also in analogy to ferromagnets,… ▽ More Ultra-fast dynamics, insensitivity to external magnetic fields, or absence of magnetic stray fields are examples of properties that make antiferromagnets of potential use in the development of spintronic devices. Similar to their ferromagnetic counterparts, antiferromagnets can store information in the orientations of the collective magnetic order vector. However, also in analogy to ferromagnets, the readout magnetoresistivity signals in simple antiferromagnetic films have been weak and the extension of the electrical reorientation mechanism to optics has not been achieved. Here we report reversible and reproducible quenching of an antiferromagnetic CuMnAs film by either electrical or ultrashort optical pulses into nano-fragmented domain states. The resulting resistivity changes approach 20\% at room temperature, which is comparable to the giant magnetoresistance ratios in ferromagnetic multilayers. We also obtain a signal readout by optical reflectivity. The analog time-dependent switching and relaxation characteristics of our devices can mimic functionality of spiking neural network components. △ Less

Submitted 24 June, 2021; v1 submitted 19 September, 2019; originally announced September 2019.

Journal ref: Nat. Electron 4 (2021) 30-37

Imaging and writing magnetic domains in the non-collinear antiferromagnet Mn$_{\text{3}}$Sn

Authors: Helena Reichlova, Tomas Janda, Joao Godinho, Anastasios Markou, Dominik Kriegner, Richard Schlitz, Jakub Zelezny, Zbynek Soban, Mauricio Bejarano, Helmut Schultheiss, Petr Nemec, Tomas Jungwirth, Claudia Felser, Joerg Wunderlich, Sebastian T. B. Goennenwein

Abstract: Harnessing the unique properties of non-collinear antiferromagnets (AFMs) will be essential for exploiting the full potential of antiferromagnetic spintronics. Indeed, many of the effects enabling ferromagnetic spintronic devices have a corresponding counterpart in materials with non-collinear spin structure. In addition, new phenomena such as the magnetic spin Hall effect were experimentally obse… ▽ More Harnessing the unique properties of non-collinear antiferromagnets (AFMs) will be essential for exploiting the full potential of antiferromagnetic spintronics. Indeed, many of the effects enabling ferromagnetic spintronic devices have a corresponding counterpart in materials with non-collinear spin structure. In addition, new phenomena such as the magnetic spin Hall effect were experimentally observed in non-collinear AFMs, and the presence of the equivalent to the ferromagnetic spin transfer torque via spin polarized currents was theoretically predicted. In spite of these developments, an interpretation of the rich physical phenomena observed in non-collinear antiferromagnets is challenging, since the microscopic spin arrangement, the magnetic domain distribution, and the domain orientations have proven notoriously difficult to access experimentally. This is all the more problematic, as imaging and writing magnetic domains is of central importance for applications. Successful imaging is a basic requirement to experimentally confirm the spin transfer torque acting on non-collinear domain walls and therefore of eminent interest. Here, we demonstrate that the local magnetic structure of the non-collinear AFM Mn3Sn films can be imaged by scanning thermal gradient microscopy (STGM). The technique is based on scanning a laser spot over the sample's surface, and recording the ensuing thermo-voltage. We image the magnetic structure at a series of different temperatures and show that at room temperature, the domain structure is not affected by the application of moderate magnetic fields. In addition to imaging, we establish a scheme for heat-assisted magnetic recording, using local laser heating in combination with magnetic fields to intentionally write domain patterns into the antiferromagnet. △ Less

Submitted 31 May, 2019; originally announced May 2019.

Comments: 4 figures

Transition between canted antiferromagnetic and spin-polarized ferromagnetic quantum Hall states in graphene on a ferrimagnetic insulator

Authors: Y. Li, M. Amado, T. Hyart, G. P. Mazur, V. Risinggård, T. Wagner, L. McKenzie Sell, G. Kimbell, J. Wunderlich, J. Linder, J. W. A. Robinson

Abstract: In the quantum Hall regime of graphene, antiferromagnetic and spin-polarized ferromagnetic states at the zeroth Landau level compete, leading to a canted antiferromagnetic state depending on the direction and magnitude of an applied magnetic field. Here, we investigate this transition at 2.7 K in graphene Hall bars that are proximity coupled to the ferrimagnetic insulator Y$_{3}$Fe$_{5}$O$_{12}$.… ▽ More In the quantum Hall regime of graphene, antiferromagnetic and spin-polarized ferromagnetic states at the zeroth Landau level compete, leading to a canted antiferromagnetic state depending on the direction and magnitude of an applied magnetic field. Here, we investigate this transition at 2.7 K in graphene Hall bars that are proximity coupled to the ferrimagnetic insulator Y$_{3}$Fe$_{5}$O$_{12}$. From nonlocal transport measurements, we demonstrate an induced magnetic exchange field in graphene, which lowers the magnetic field required to modulate the magnetic state in graphene. These results show that a magnetic proximity effect in graphene is an important ingredient for the development of two-dimensional materials in which it is desirable for ordered states of matter to be tunable with relatively small applied magnetic fields (> 6 T). △ Less

Submitted 1 June, 2020; v1 submitted 16 May, 2019; originally announced May 2019.

Comments: 25 pages, 17 figures

Journal ref: Phys. Rev. B 101, 241405 (2020)

Near-field magneto-caloritronic nanoscopy on ferromagnetic nanostructures

Authors: E. Pfitzner, X. Hu, H. W. Schumacher, A. Hoehl, D. Venkateshvaran, M. Cubukcu, J. -W. Liao, S. Auffret, J. Heberle, J. Wunderlich, B. Kaestner

Abstract: Near-field optical microscopy by means of infrared photocurrent map** has rapidly developed in recent years. In this letter we introduce a near-field induced contrast mechanism arising when a conducting surface, exhibiting a magnetic moment, is exposed to a nanoscale heat source. The magneto-caloritronic response of the sample to near-field excitation of a localized thermal gradient leads to a c… ▽ More Near-field optical microscopy by means of infrared photocurrent map** has rapidly developed in recent years. In this letter we introduce a near-field induced contrast mechanism arising when a conducting surface, exhibiting a magnetic moment, is exposed to a nanoscale heat source. The magneto-caloritronic response of the sample to near-field excitation of a localized thermal gradient leads to a contrast determined by the local state of magnetization. By comparing the measured electric response of a magnetic reference sample with numerical simulations we derive an estimate of the field enhancement and the corresponding temperature profile induced on the sample surface. △ Less

Submitted 31 August, 2018; originally announced August 2018.

Journal ref: AIP Advances 8, 125329 (2018)

Electrically induced and detected Néel vector reversal in a collinear antiferromagnet

Authors: J. Godinho, H. Reichlova, D. Kriegner, V. Novak, K. Olejnik, Z. Kaspar, Z. Soban, P Wadley, R. P. Campion, R. M. Otxoa, P. E. Roy, J. Zelezny, T. Jungwirth, J. Wunderlich

Abstract: Electrical detection of the 180 deg spin reversal, which is the basis of the operation of ferromagnetic memories, is among the outstanding challenges in the research of antiferromagnetic spintronics. Analogous effects to the ferromagnetic giant or tunneling magnetoresistance have not yet been realized in antiferromagnetic multilayers. Anomalous Hall effect (AHE), which has been recently employed f… ▽ More Electrical detection of the 180 deg spin reversal, which is the basis of the operation of ferromagnetic memories, is among the outstanding challenges in the research of antiferromagnetic spintronics. Analogous effects to the ferromagnetic giant or tunneling magnetoresistance have not yet been realized in antiferromagnetic multilayers. Anomalous Hall effect (AHE), which has been recently employed for spin reversal detection in non-collinear antiferromagnets, is limited to materials that crystalize in ferromagnetic symmetry groups. Here we demonstrate electrical detection of the 180 deg Néel vector reversal in CuMnAs which comprises two collinear spin sublattices and belongs to an antiferromagnetic symmetry group with no net magnetic moment. We detect the spin reversal by measuring a second-order magnetotransport coefficient whose presence is allowed in systems with broken space inversion symmetry. The phenomenology of the non-linear transport effect we observe in CuMnAs is consistent with a microscopic scenario combining anisotropic magneto-resistance (AMR) with a transient tilt of the Néel vector due to a current-induced, staggered spin-orbit field. We use the same staggered spin-orbit field, but of a higher amplitude, for the electrical switching between reversed antiferromagnetic states which are stable and show no sign of decay over 25 hour probing times. △ Less

Submitted 7 June, 2018; originally announced June 2018.

Comments: 15 pages, 5 pictures, supplementary informations

Spin-pum**-induced inverse spin-Hall effect in Nb/Ni80Fe20 bilayers and its strong decay across the superconducting transition temperature

Authors: K. -R. Jeon, C. Ciccarelli, H. Kurebayashi, J. Wunderlich, L. F. Cohen, S. Komori, J. W. A. Robinson, M. G. Blamire

Abstract: We quantify the spin Hall angle θSH and spin diffusion length lsd of Nb from inverse spin-Hall effect (iSHE) measurements in Nb/Ni80Fe20 bilayers under ferromagnetic resonance. By varying the Nb thickness tNb and comparing to a Ni80Fe20/Pt reference sample, room temperature values of θSH and lsd for Nb are estimated to be approximately -0.001 and 30 nm, respectively. We also investigate the iSHE a… ▽ More We quantify the spin Hall angle θSH and spin diffusion length lsd of Nb from inverse spin-Hall effect (iSHE) measurements in Nb/Ni80Fe20 bilayers under ferromagnetic resonance. By varying the Nb thickness tNb and comparing to a Ni80Fe20/Pt reference sample, room temperature values of θSH and lsd for Nb are estimated to be approximately -0.001 and 30 nm, respectively. We also investigate the iSHE as a function of temperature T for different tNb. Above the superconducting transition temperature Tc of Nb, a clear tNb-dependent T evolution of the iSHE is observed whereas below Tc, the iSHE voltage drops rapidly and is below the sensitivity of our measurement setup at a lower T. This suggests the strong decay of the quasiparticle (QP) charge-imbalance relaxation length across Tc, as supported by an additional investigation of the iSHE in a different sample geometry along with model calculation. Our finding suggests careful consideration should be made when develo** superconductor spin-Hall devices that intend to utilize QP-mediated spin-to-charge interconversion. △ Less

Submitted 6 June, 2018; v1 submitted 2 May, 2018; originally announced May 2018.

Comments: 25 pages, 7 figures, SM; note that the title of the manuscript has been changed to "Spin-pum**-induced inverse spin-Hall effect in Nb/Ni80Fe20 bilayers and its strong decay across the superconducting transition temperature."

THz electrical writing speed in an antiferromagnetic memory

Authors: K. Olejnik, T. Seifert, Z. Kaspar, V. Novak, P. Wadley, R. P. Campion, M. Baumgartner, P. Gambardella, P. Nemec, J. Wunderlich, J. Sinova, M. Muller, T. Kampfrath, T. Jungwirth

Abstract: The speed of writing of state-of-the-art ferromagnetic memories is physically limited by an intrinsic GHz threshold. Recently, an alternative research direction has been initiated by realizing memory devices based on antiferromagnets in which spin directions periodically alternate from one atomic lattice site to the next. In our work we experimentally demonstrate at room temperature that the speed… ▽ More The speed of writing of state-of-the-art ferromagnetic memories is physically limited by an intrinsic GHz threshold. Recently, an alternative research direction has been initiated by realizing memory devices based on antiferromagnets in which spin directions periodically alternate from one atomic lattice site to the next. In our work we experimentally demonstrate at room temperature that the speed of reversible electrical writing in a memory device can be scaled up to THz using an antiferromagnet. Efficient current-induced spin-torque mechanism is responsible for the switching in our memory devices throughout the twelve orders of magnitude range of writing speeds from Hz to THz. Our work opens the path towards the development of memory-logic technology reaching the elusive THz band. △ Less

Submitted 24 October, 2017; originally announced November 2017.

Current-polarity dependent manipulation of antiferromagnetic domains

Authors: P. Wadley, S. Reimers, M. J. Grzybowski, C. Andrews, M. Wang, J. S. Chauhan, B. L. Gallagher, R. P. Campion, K. W. Edmonds, S. S. Dhesi, F. Maccherozzi, V. Novak, J. Wunderlich, T. Jungwirth

Abstract: Antiferromagnets have a number of favourable properties as active elements in spintronic devices, including ultra-fast dynamics, zero stray fields and insensitivity to external magnetic fields . Tetragonal CuMnAs is a testbed system in which the antiferromagnetic order parameter can be switched reversibly at ambient conditions using electrical currents . In previous experiments, orthogonal in-plan… ▽ More Antiferromagnets have a number of favourable properties as active elements in spintronic devices, including ultra-fast dynamics, zero stray fields and insensitivity to external magnetic fields . Tetragonal CuMnAs is a testbed system in which the antiferromagnetic order parameter can be switched reversibly at ambient conditions using electrical currents . In previous experiments, orthogonal in-plane current pulses were used to induce 90 degree rotations of antiferromagnetic domains and demonstrate the operation of all-electrical memory bits in a multi-terminal geometry . Here, we demonstrate that antiferromagnetic domain walls can be manipulated to realize stable and reproducible domain changes using only two electrical contacts. This is achieved by using the polarity of the current to switch the sign of the current-induced effective field acting on the antiferromagnetic sublattices. The resulting reversible domain and domain wall reconfigurations are imaged using x-ray magnetic linear dichroism microscopy, and can also be detected electrically. The switching by domain wall motion can occur at much lower current densities than those needed for coherent domain switching. △ Less

Submitted 14 November, 2017; originally announced November 2017.

Comments: 8 pages, 4 figures

Magnetic anisotropy in antiferromagnetic hexagonal MnTe

Authors: D. Kriegner, H. Reichlova, J. Grenzer, W. Schmidt, E. Ressouche, J. Godinho, T. Wagner, S. Y. Martin, A. B. Shick, V. V. Volobuev, G. Springholz, V. Holý, J. Wunderlich, T. Jungwirth, K. Výborný

Abstract: Antiferromagnetic hexagonal MnTe is a promising material for spintronic devices relying on the control of antiferromagnetic domain orientations. Here we report on neutron diffraction, magnetotransport, and magnetometry experiments on semiconducting epitaxial MnTe thin films together with density functional theory (DFT) calculations of the magnetic anisotropies. The easy axes of the magnetic mome… ▽ More Antiferromagnetic hexagonal MnTe is a promising material for spintronic devices relying on the control of antiferromagnetic domain orientations. Here we report on neutron diffraction, magnetotransport, and magnetometry experiments on semiconducting epitaxial MnTe thin films together with density functional theory (DFT) calculations of the magnetic anisotropies. The easy axes of the magnetic moments within the hexagonal basal plane are determined to be along $\left<1\bar100\right>$ directions. The spin-flop transition and concomitant repopulation of domains in strong magnetic fields is observed. Using epitaxially induced strain the onset of the spin-flop transition changes from $\sim2$~T to $\sim0.5$~T for films grown on InP and SrF$_2$ substrates, respectively. △ Less

Submitted 17 September, 2018; v1 submitted 23 October, 2017; originally announced October 2017.

Comments: 9 pages, 7 figures

Journal ref: Phys. Rev. B 96, 214418 (2017)

Fast optical control of spin in semiconductor interfacial structures

Authors: L. Nádvorník, M. Surýnek, K. Olejník, V. Novák, J. Wunderlich, F. Trojánek, T. Jungwirth, P. Němec

Abstract: We report on a picosecond-fast optical removal of spin polarization from a self-confined photo-carrier system at an undoped GaAs/AlGaAs interface possessing superior long-range and high-speed spin transport properties. We employed a modified resonant spin amplification technique with unequal intensities of subsequent pump pulses to experimentally distinguish the evolution of spin populations origi… ▽ More We report on a picosecond-fast optical removal of spin polarization from a self-confined photo-carrier system at an undoped GaAs/AlGaAs interface possessing superior long-range and high-speed spin transport properties. We employed a modified resonant spin amplification technique with unequal intensities of subsequent pump pulses to experimentally distinguish the evolution of spin populations originating from different excitation laser pulses. We demonstrate that the density of spins, which is injected into the system by means of the optical orientation, can be controlled by reducing the electrostatic confinement of the system using an additional generation of photocarriers. It is also shown that the disturbed confinement recovers within hundreds of picoseconds after which spins can be again photo-injected into the system. △ Less

Submitted 30 May, 2017; originally announced May 2017.

Journal ref: Phys. Rev. Applied 8, 034022 (2017)

Focused issue on antiferromagnetic spintronics: An overview (Part of a collection of reviews on antiferromagnetic spintronics)

Authors: T. Jungwirth, J. Sinova, A. Manchon, X. Marti, J. Wunderlich, C. Felser

Abstract: This focused issue attempts to provide a comprehensive introduction into the field of antiferromagnetic spintronics. Apart from the brief overview below, it features five review articles. The intention is to cover in a coherent and complementary way key physical aspects of the antiferromagnetic spintronics research. These range from microelectronic memory devices and optical manipulation and detec… ▽ More This focused issue attempts to provide a comprehensive introduction into the field of antiferromagnetic spintronics. Apart from the brief overview below, it features five review articles. The intention is to cover in a coherent and complementary way key physical aspects of the antiferromagnetic spintronics research. These range from microelectronic memory devices and optical manipulation and detection of antiferromagnetic spins, to the fundamentals of antiferromagnetic dynamics in uniform or spin-textured systems, and to the interplay of antiferromagnetic spintronics with topological phenomena. The antiferromagnetic ordering can take a number of forms including fully compensated collinear, non-collinear, and non-coplanar magnetic lattices, compensated and uncompensated ferrimagnets, or metamagnetic materials hosting an antiferromagnetic to ferromagnetic phase transition. Apart from the variety of distinct magnetic crystal structures, the focused issue also encompasses spintronic phenomena and devices studied in antiferromagnet/ferromagnet heterostructures and in synthetic antiferromagnets. △ Less

Submitted 30 May, 2017; originally announced May 2017.

Comments: 3 pages, 1 figure, Part of a collection of reviews on antiferromagnetic spintronics

Nano scale thermo-electrical detection of magnetic domain wall propagation

Authors: Patryk Krzysteczko, James Wells, Alexander Fernandez Scarioni, Zbynek Soban, Tomas Janda, Xiukun Hu, Vit Saidl, Richard P. Campion, Rhodri Mansell, Ji-Hyun Lee, Russell P. Cowburn, Petr Nemec, Olga Kazakova, Joerg Wunderlich, Hans Werner Schumacher

Abstract: In magnetic nanowires with perpendicular magnetic anisotropy (PMA) magnetic domain walls (DW) are narrow and can move rapidly driven by current induced torques. This enables important applications like high-density memories for which the precise detection of the position and motion of a propagating DW is of utmost interest. Today's DW detection tools are often limited in resolution, or acquisition… ▽ More In magnetic nanowires with perpendicular magnetic anisotropy (PMA) magnetic domain walls (DW) are narrow and can move rapidly driven by current induced torques. This enables important applications like high-density memories for which the precise detection of the position and motion of a propagating DW is of utmost interest. Today's DW detection tools are often limited in resolution, or acquisition speed, or can only be applied on specific materials. Here, we show that the anomalous Nernst effect provides a simple and powerful tool to precisely track the position and motion of a single DW propagating in a PMA nanowire. We detect field and current driven DW propagation in both metallic heterostructures and dilute magnetic semiconductors over a broad temperature range. The demonstrated spatial resolution below 20 nm is comparable to the DW width in typical metallic PMA systems. △ Less

Submitted 23 November, 2016; originally announced November 2016.

Comments: 26 pages including supplementary information

Journal ref: Phys. Rev. B 95, 220410 (2017)

Temperature and thickness dependence of tunneling anisotropic magnetoresistance in exchange-biased Py/IrMn/MgO/Ta stacks

Authors: H. Reichlova, V. Novak, Y. Kurosaki, M. Yamada, H. Yamamoto, A. Nishide, J. Hayakawa, H. Takahashi, M. Marysko, J. Wunderlich, X. Marti, T. Jungwirth

Abstract: We investigate the thickness and temperature dependence of a series of Ni0:8Fe0:2/Ir0:2Mn0:8 bilayer samples with varying thickness ratio of the ferromagnet/antiferromagnet (tFM/tAFM) in order to explore the exchange coupling strengths in tunneling anisotropic magnetoresistance (TAMR) devices. Specific values of tFM/tAFM lead to four distinct scenarios with specific electric responses to moderate… ▽ More We investigate the thickness and temperature dependence of a series of Ni0:8Fe0:2/Ir0:2Mn0:8 bilayer samples with varying thickness ratio of the ferromagnet/antiferromagnet (tFM/tAFM) in order to explore the exchange coupling strengths in tunneling anisotropic magnetoresistance (TAMR) devices. Specific values of tFM/tAFM lead to four distinct scenarios with specific electric responses to moderate magnetic fields. The characteristic dependence of the measured TAMR signal on applied voltage allows us to confirm its persistence up to room temperature despite an overlapped contribution by a thermal magnetic noise. △ Less

Submitted 31 July, 2016; originally announced August 2016.

Journal ref: Mater. Res. Express 3 (2016) 076406

Inertial displacement of a domain wall excited by ultra-short circularly polarized laser pulses

Authors: T. Janda, P. E. Roy, R. M. Otxoa, Z. Soban, A. Ramsay, A. C. Irvine, F. Trojanek, R. P. Campion, B. L. Gallagher, P. Nemec, T. Jungwirth, J. Wunderlich

Abstract: Domain wall motion driven by ultra-short laser pulses is a prerequisite for envisaged low-power spintronics combining storage of information in magneto electronic devices with high speed and long distance transmission of information encoded in circularly polarized light. Here we demonstrate the conversion of the circular polarization of incident femtosecond laser pulses into inertial displacement… ▽ More Domain wall motion driven by ultra-short laser pulses is a prerequisite for envisaged low-power spintronics combining storage of information in magneto electronic devices with high speed and long distance transmission of information encoded in circularly polarized light. Here we demonstrate the conversion of the circular polarization of incident femtosecond laser pulses into inertial displacement of a domain wall in a ferromagnetic semiconductor. In our study we combine electrical measurements and magneto-optical imaging of the domain wall displacement with micromagnetic simulations. The optical spin transfer torque acts over a picosecond recombination time of the spin polarized photo-carriers which only leads to a deformation of the internal domain wall structure. We show that subsequent depinning and micro-meter distance displacement without an applied magnetic field or any other external stimuli can only occur due to the inertia of the domain wall. △ Less

Submitted 16 June, 2016; originally announced June 2016.

Efficient conversion of light to charge and spin in Hall-bar microdevice

Authors: L. Nádvorník, J. A. Haigh, K. Olejník, A. C. Irvine, V. Novák, T. Jungwirth, J. Wunderlich

Abstract: We report an experimental demonstration of a local amplification of the spin Hall voltage using an expanding depletion zone at a pn-junction in GaAs/AlGaAs Hall-bar microdevices. It is demonstrated that the depletion zone can be spatially expanded by applying reverse bias by at least 10~$μ$m at low temperature. In the depleted regime, the spin Hall signals reached more than one order of magnitude… ▽ More We report an experimental demonstration of a local amplification of the spin Hall voltage using an expanding depletion zone at a pn-junction in GaAs/AlGaAs Hall-bar microdevices. It is demonstrated that the depletion zone can be spatially expanded by applying reverse bias by at least 10~$μ$m at low temperature. In the depleted regime, the spin Hall signals reached more than one order of magnitude higher values than in the normal regime at the same electrical current flowing through the micro-device. It is shown that the pn-bias has two distinct effects on the detected spin Hall signal. It controls the local drift field at the Hall cross which is highly non-linear in the pn-bias due to the shift of the depletion front. Simultaneously, it produces a change in the spin-transport parameters due to the non-linear change in the carrier density at the Hall cross with the pn-bias. △ Less

Submitted 13 May, 2016; originally announced May 2016.

Journal ref: Phys. Rev. B 91, 125205 (2015)

Enhancement of the spin Hall voltage in a reverse-biased planar pn-junction

Authors: L. Nádvorník, K. Olejník, P. Němec, V. Novák, T. Janda, J. Wunderlich, F. Trojánek, T. Jungwirth

Abstract: We report an experimental demonstration of a local amplification of the spin Hall voltage using an expanding depletion zone at a pn-junction in GaAs/AlGaAs Hall-bar microdevices. It is demonstrated that the depletion zone can be spatially expanded by applying reverse bias by at least 10~$μ$m at low temperature. In the depleted regime, the spin Hall signals reached more than one order of magnitude… ▽ More We report an experimental demonstration of a local amplification of the spin Hall voltage using an expanding depletion zone at a pn-junction in GaAs/AlGaAs Hall-bar microdevices. It is demonstrated that the depletion zone can be spatially expanded by applying reverse bias by at least 10~$μ$m at low temperature. In the depleted regime, the spin Hall signals reached more than one order of magnitude higher values than in the normal regime at the same electrical current flowing through the micro-device. It is shown that the pn-bias has two distinct effects on the detected spin Hall signal. It controls the local drift field at the Hall cross which is highly non-linear in the pn-bias due to the shift of the depletion front. Simultaneously, it produces a change in the spin-transport parameters due to the non-linear change in the carrier density at the Hall cross with the pn-bias. △ Less

Submitted 13 May, 2016; originally announced May 2016.

Journal ref: Phys. Rev. B 94, 075306 (2016)

Robust Picosecond writing of a Layered Antiferromagnet by Staggered Spin-Orbit-Fields

Authors: P. E. Roy, R. M. Otxoa, J. Wunderlich

Abstract: Ultrafast electrical switching by current-induced staggered spin-orbit fields, with minimal risk of overshoot, is shown in layered easy-plane antiferromagnets with basal-plane biaxial anisotropy. The reliable switching is due to the field-like torque, relaxing stringent requirements with respect to precision in the time-duration of the excitation pulse. We investigate the switching characteristics… ▽ More Ultrafast electrical switching by current-induced staggered spin-orbit fields, with minimal risk of overshoot, is shown in layered easy-plane antiferromagnets with basal-plane biaxial anisotropy. The reliable switching is due to the field-like torque, relaxing stringent requirements with respect to precision in the time-duration of the excitation pulse. We investigate the switching characteristics as a function of the spin-orbit field strength, pulse duration, pulse rise and fall time and dam** by atomistic spin dynamics simulations and an effective equation of motion for the antiferromagnetic order-parameter. The condition, determining the critical spin-orbit field strength for switching is determined and we go on to show that robust picosecond writing is possible at feasible current magnitudes. △ Less

Submitted 20 April, 2016; originally announced April 2016.

Journal ref: Phys. Rev. B 94, 014439 (2016)

Nanosecond spin-transfer over tens of microns in a bare GaAs/AlGaAs layer

Authors: L. Nádvorník, P. Němec, T. Janda, K. Olejník, V. Novák, V. Skoromets, H. Němec, P. Kužel, F. Trojánek, T. Jungwirth, J. Wunderlich

Abstract: The spin-conserving length-scale is a key parameter determining functionalities of a broad range of spintronic devices including magnetic multilayer spin-valves in the commercialized magnetic memories or lateral spin transistors in experimental spin-logic elements. Spatially resolved optical pump-and-probe experiments in the lateral devices allow for the direct measurement of the lengthscale and t… ▽ More The spin-conserving length-scale is a key parameter determining functionalities of a broad range of spintronic devices including magnetic multilayer spin-valves in the commercialized magnetic memories or lateral spin transistors in experimental spin-logic elements. Spatially resolved optical pump-and-probe experiments in the lateral devices allow for the direct measurement of the lengthscale and the time-scale at which spin-information is transferred from the injector to the detector. Using this technique, we demonstrate that in an undoped GaAs/AlGaAs layer spins are detected at distances reaching more than ten microns from the injection point at times as short as nanoseconds after the pump-pulse. The observed unique combination of the long-range and highrate electronic spin-transport requires simultaneous suppression of mechanisms limiting the spin life-time and mobility of carriers. Unlike earlier attempts focusing on elaborate do**, gating, or heterostructures we demonstrate that the bare GaAs/AlGaAs layer intrinsically provides superior spin-transport characteristics whether deposited directly on the substrate or embedded in complex heterostructures. △ Less

Submitted 7 October, 2015; originally announced October 2015.

Journal ref: Sci. Rep. 6, 22901 (2016)

Antiferromagnetic spintronics

Authors: T. Jungwirth, X. Marti, P. Wadley, J. Wunderlich

Abstract: Antiferromagnetic materials are magnetic inside, however, the direction of their ordered microscopic moments alternates between individual atomic sites. The resulting zero net magnetic moment makes magnetism in antiferromagnets invisible on the outside. It also implies that if information was stored in antiferromagnetic moments it would be insensitive to disturbing external magnetic fields, and th… ▽ More Antiferromagnetic materials are magnetic inside, however, the direction of their ordered microscopic moments alternates between individual atomic sites. The resulting zero net magnetic moment makes magnetism in antiferromagnets invisible on the outside. It also implies that if information was stored in antiferromagnetic moments it would be insensitive to disturbing external magnetic fields, and the antiferromagnetic element would not affect magnetically its neighbors no matter how densely the elements were arranged in a device. The intrinsic high frequencies of antiferromagnetic dynamics represent another property that makes antiferromagnets distinct from ferromagnets. The outstanding question is how to efficiently manipulate and detect the magnetic state of an antiferromagnet. In this article we give an overview of recent works addressing this question. We also review studies looking at merits of antiferromagnetic spintronics from a more general perspective of spin-ransport, magnetization dynamics, and materials research, and give a brief outlook of future research and applications of antiferromagnetic spintronics. △ Less

Submitted 17 September, 2015; originally announced September 2015.

Comments: 13 pages, 7 figures

Electrical detection of magnetization reversal without auxiliary magnets

Authors: K. Olejník, V. Novák, J. Wunderlich, T. Jungwirth

Abstract: First-generation magnetic random access memories based on anisotropic magnetoresistance required magnetic fields for both writing and reading. Modern all-electrical read/write memories use instead non-relativistic spin-transport connecting the storing magnetic layer with a reference ferromagnet. Recent studies have focused on electrical manipulation of magnetic moments by relativistic spin-torques… ▽ More First-generation magnetic random access memories based on anisotropic magnetoresistance required magnetic fields for both writing and reading. Modern all-electrical read/write memories use instead non-relativistic spin-transport connecting the storing magnetic layer with a reference ferromagnet. Recent studies have focused on electrical manipulation of magnetic moments by relativistic spin-torques requiring no reference ferromagnet. Here we report the observation of a counterpart magnetoresistance effect in such a relativistic system which allows us to electrically detect the sign of the magnetization without an auxiliary magnetic field or ferromagnet. We observe the effect in a geometry in which the magnetization of a uniaxial (Ga,Mn)As epilayer is set either parallel or antiparallel to a current-induced non-equilibrium spin polarization of carriers. In our structure, this linear-in-current magnetoresistance reaches 0.2\% at current density of $10^6$ A cm$^{-2}$. △ Less

Submitted 1 June, 2015; originally announced June 2015.

Comments: 5 pages, 4 figures

Journal ref: Phys. Rev. B 91, 180402(R) (2015)

Anisotropic magneto-capacitance in ferromagnetic-plate capacitors

Authors: J. A. Haigh, C. Ciccarelli, A. C. Betz, A. Irvine, V. Novák, T. Jungwirth, J. Wunderlich

Abstract: The capacitance of a parallel plate capacitor can depend on applied magnetic field. Previous studies have identified capacitance changes induced via classical Lorentz force or spin-dependent Zeeman effects. Here we measure a magnetization direction dependent capacitance in parallel-plate capacitors where one plate is a ferromagnetic semiconductor, gallium manganese arsenide. This anisotropic magne… ▽ More The capacitance of a parallel plate capacitor can depend on applied magnetic field. Previous studies have identified capacitance changes induced via classical Lorentz force or spin-dependent Zeeman effects. Here we measure a magnetization direction dependent capacitance in parallel-plate capacitors where one plate is a ferromagnetic semiconductor, gallium manganese arsenide. This anisotropic magneto-capacitance is due to the anisotropy in the density of states dependent on the magnetization through the strong spin-orbit interaction. △ Less

Submitted 1 May, 2015; originally announced May 2015.

Comments: 5 pages, 4 figures

Journal ref: Phys. Rev. B 91 140409 (2014)

Reconfigurable Boolean Logic using Magnetic Single-Electron Transistors

Authors: M. F. Gonzalez-Zalba, C. Ciccarelli, L. P. Zarbo, A. C. Irvine, R. P. Campion, B. L. Gallagher, T. Jungwirth, A. J. Ferguson, J. Wunderlich

Abstract: We propose a novel hybrid single-electron device for reprogrammable low-power logic operations, the magnetic single-electron transistor (MSET). The device consists of an aluminium single-electron transistors with a GaMnAs magnetic back-gate. Changing between different logic gate functions is realized by reorienting the magnetic moments of the magnetic layer which induce a voltage shift on the Coul… ▽ More We propose a novel hybrid single-electron device for reprogrammable low-power logic operations, the magnetic single-electron transistor (MSET). The device consists of an aluminium single-electron transistors with a GaMnAs magnetic back-gate. Changing between different logic gate functions is realized by reorienting the magnetic moments of the magnetic layer which induce a voltage shift on the Coulomb blockade oscillations of the MSET. We show that we can arbitrarily reprogram the function of the device from an n-type SET for in-plane magnetization of the GaMnAs layer to p-type SET for out-of-plane magnetization orientation. Moreover, we demonstrate a set of reprogrammable Boolean gates and its logical complement at the single device level. Finally, we propose two sets of reconfigurable binary gates using combinations of two MSETs in a pull-down network. △ Less

Submitted 6 April, 2015; originally announced April 2015.

Current induced torques in structures with ultra-thin IrMn antiferromagnet

Authors: H. Reichlová, D. Kriegner, V. Holý, K. Olejník, V. Novák, M. Yamada, K. Miura, S. Ogawa, H. Takahashi, T. Jungwirth, J. Wunderlich

Abstract: Relativistic current induced torques and devices utilizing antiferromagnets have been independently considered as two promising new directions in spintronics research. Here we report electrical measurements of the torques in structures comprising a $\sim1$~nm thick layer of an antiferromagnet IrMn. The reduced Néel temperature and the thickness comparable to the spin-diffusion length allow us to i… ▽ More Relativistic current induced torques and devices utilizing antiferromagnets have been independently considered as two promising new directions in spintronics research. Here we report electrical measurements of the torques in structures comprising a $\sim1$~nm thick layer of an antiferromagnet IrMn. The reduced Néel temperature and the thickness comparable to the spin-diffusion length allow us to investigate the role of the antiferromagnetic order in the ultra-thin IrMn films in the observed torques. In a Ta/IrMn/CoFeB structure, IrMn in the high-temperature phase diminishes the torque in the CoFeB ferromagnet. At low temperatures, the antidam** torque in CoFeB flips sign as compared to the reference Ta/CoFeB structure, suggesting that IrMn in the antiferromagnetic phase governs the net torque acting on the ferromagnet. At low temperatures, current induced torque signatures are observed also in a Ta/IrMn structure comprising no ferromagnetic layer. △ Less

Submitted 20 July, 2015; v1 submitted 12 March, 2015; originally announced March 2015.

Comments: 5 pages, 4 figures

Journal ref: Phys. Rev. B 92, 165424 (2015)

Spin Hall effect

Authors: Jairo Sinova, Sergio O. Valenzuela, J. Wunderlich, C. H. Back, T. Jungwirth

Abstract: Spin Hall effects are a collection of relativistic spin-orbit coupling phenomena in which electrical currents can generate transverse spin currents and vice versa. Although first observed only a decade ago, these effects are already ubiquitous within spintronics as standard spin-current generators and detectors. Here we review the experimental and theoretical results that have established this sub… ▽ More Spin Hall effects are a collection of relativistic spin-orbit coupling phenomena in which electrical currents can generate transverse spin currents and vice versa. Although first observed only a decade ago, these effects are already ubiquitous within spintronics as standard spin-current generators and detectors. Here we review the experimental and theoretical results that have established this sub-field of spintronics. We focus on the results that have converged to give us a clear understanding of the phenomena and how they have evolved from a qualitative to a more quantitative measurement of spin-currents and their associated spin-accumulation. Within the experimental framework, we review optical, transport, and magnetization-dynamics based measurements and link them to both phenomenological and microscopic theories of the effect. Within the theoretical framework, we review the basic mechanisms in both the extrinsic and intrinsic regime which are linked to the mechanisms present in their closely related phenomenon in ferromagnets, the anomalous Hall effect. We also review the connection to the phenomenological treatment based on spin-diffusion equations applicable to certain regimes, as well as the spin-pum** theory of spin-generation which has proven important in the measurements of the spin Hall angle. We further connect the spin-current generating spin Hall effect to the inverse spin galvanic effect, which often accompanies the SHE, in which an electrical current induces a non-equilibrium spin polarization. These effects share common microscopic origins and can exhibit similar symmetries when present in ferromagnetic/non-magnetic structures through their induced current-driven spin torques. Although we give a short chronological overview, the main body is structured from a pedagogical point of view, focusing on well-established and accepted physics. △ Less

Submitted 12 November, 2014; originally announced November 2014.

Comments: 48 pages, 40 figures

Report number: REV-10-14

Relativistic Neel-order fields induced by electrical current in antiferromagnets

Authors: J. Zelezny, H. Gao, K. Vyborny, J. Zemen, J. Masek, A. Manchon, J. Wunderlich, J. Sinova, T. Jungwirth

Abstract: We predict that a lateral electrical current in antiferromagnets can induce non-equilibrium Néel order fields, i.e. fields whose sign alternates between the spin sublattices, which can trigger ultra-fast spin-axis reorientation. Based on microscopic transport theory calculations we identify staggered current-induced fields analogous to the intra-band and to the intrinsic inter-band spin-orbit fiel… ▽ More We predict that a lateral electrical current in antiferromagnets can induce non-equilibrium Néel order fields, i.e. fields whose sign alternates between the spin sublattices, which can trigger ultra-fast spin-axis reorientation. Based on microscopic transport theory calculations we identify staggered current-induced fields analogous to the intra-band and to the intrinsic inter-band spin-orbit fields previously reported in ferromagnets with a broken inversion-symmetry crystal. To illustrate their rich physics and utility, we considered bulk Mn2Au with the two spin sublattices forming inversion partners, and a 2D square-lattice antiferromagnet with broken structural inversion symmetry modelled by a Rashba spin-orbit coupling. We propose an AFM memory device with electrical writing and reading. △ Less

Submitted 30 October, 2014; originally announced October 2014.

Comments: 5 pages, 4 figures

Journal ref: Phys. Rev. Lett. 113, 157201 (2014)

Optical spin transfer torque driven domain wall motion in ferromagnetic semiconductor

Authors: A. J. Ramsay, P. E. Roy, J. A. Haigh, R. M. Otxoa, A. C. Irvine, T. Janda, R. P. Campion, B. L. Gallagher, J. Wunderlich

Abstract: We demonstrate optical manipulation of the position of a domain wall in a dilute magnetic semiconductor, GaMnAsP. Two main contributions are identified. Firstly, photocarrier spin exerts a spin transfer torque on the magnetization via the exchange interaction. The direction of the domain wall motion can be controlled using the helicity of the laser. Secondly, the domain wall is attracted to the ho… ▽ More We demonstrate optical manipulation of the position of a domain wall in a dilute magnetic semiconductor, GaMnAsP. Two main contributions are identified. Firstly, photocarrier spin exerts a spin transfer torque on the magnetization via the exchange interaction. The direction of the domain wall motion can be controlled using the helicity of the laser. Secondly, the domain wall is attracted to the hot-spot generated by the focused laser. Unlike magnetic field driven domain wall depinning, these mechanisms directly drive domain wall motion, providing an optical tweezer like ability to position and locally probe domain walls. △ Less

Submitted 5 March, 2015; v1 submitted 22 September, 2014; originally announced September 2014.

Comments: 5 pages, 4 figs, final version improved by referee feedback

Journal ref: Phys. Rev. Lett. 114 067202 (2015)

Tetragonal phase of epitaxial room-temperature antiferromagnet CuMnAs

Authors: P. Wadley, V. Novák, R. P. Campion, C. Rinaldi, X. Martí, H. Reichlová, J. Zelezný, J. Gazquez, M. A. Roldan, M. Varela, D. Khalyavin, S. Langridge, D. Kriegner, F. Máca, J. Masek, R. Bertacco, V. Holy, A. W. Rushforth, K. W. Edmonds, B. L. Gallagher, C. T. Foxon, J. Wunderlich, T. Jungwirth

Abstract: Recent studies have demonstrated the potential of antiferromagnets as the active component in spintronic devices. This is in contrast to their current passive role as pinning layers in hard disk read heads and magnetic memories. Here we report the epitaxial growth of a new high-temperature antiferromagnetic material, tetragonal CuMnAs, which exhibits excellent crystal quality, chemical order and c… ▽ More Recent studies have demonstrated the potential of antiferromagnets as the active component in spintronic devices. This is in contrast to their current passive role as pinning layers in hard disk read heads and magnetic memories. Here we report the epitaxial growth of a new high-temperature antiferromagnetic material, tetragonal CuMnAs, which exhibits excellent crystal quality, chemical order and compatibility with existing semiconductor technologies. We demonstrate its growth on the III-V semiconductors GaAs and GaP, and show that the structure is also lattice matched to Si. Neutron diffraction shows collinear antiferromagnetic order with a high Neél temperature. Combined with our demonstration of room-temperature exchange coupling in a CuMnAs/Fe bilayer, we conclude that tetragonal CuMnAs films are suitable candidate materials for antiferromagnetic spintronics. △ Less

Submitted 14 February, 2014; originally announced February 2014.

Comments: 16 pages, 5 figures, Published in Nature Communications (2013)

Journal ref: Nat. Commun. 4:2322

Spin-dependent phenomena and device concepts explored in (Ga,Mn)As

Authors: T. Jungwirth, J. Wunderlich, V. Novak, K. Olejnik, B. L. Gallagher, R. P. Campion, K. W. Edmonds, A. W. Rushforth, A. J. Ferguson, P. Nemec

Abstract: Over the past two decades, the research of (Ga,Mn)As has led to a deeper understanding of relativistic spin-dependent phenomena in magnetic systems. It has also led to discoveries of new effects and demonstrations of unprecedented functionalities of experimental spintronic devices with general applicability to a wide range of materials. In this article we review the basic material properties that… ▽ More Over the past two decades, the research of (Ga,Mn)As has led to a deeper understanding of relativistic spin-dependent phenomena in magnetic systems. It has also led to discoveries of new effects and demonstrations of unprecedented functionalities of experimental spintronic devices with general applicability to a wide range of materials. In this article we review the basic material properties that make (Ga,Mn)As a favorable test-bed system for spintronics research and discuss contributions of (Ga,Mn)As studies in the general context of the spin-dependent phenomena and device concepts. Special focus is on the spin-orbit coupling induced effects and the reviewed topics include the interaction of spin with electrical current, light, and heat. △ Less

Submitted 14 July, 2014; v1 submitted 7 October, 2013; originally announced October 2013.

Comments: 47 pages, 41 figures

Journal ref: Rev. Mod. Phys. 86, 855 (2014)

Observation of a Berry phase anti-dam** spin-orbit torque

Authors: H. Kurebayashi, Jairo Sinova, D. Fang, A. C. Irvine, J. Wunderlich, V. Novak, R. P. Campion, B. L. Gallagher, E. K. Vehstedt, L. P. Zarbo, K. Vyborny, A. J. Ferguson, T. Jungwirth

Abstract: Recent observations of current-induced magnetization switching at ferromagnet/normal-conductor interfaces have important consequences for future magnetic memory technology. In one interpretation, the switching originates from carriers with spin-dependent scattering giving rise to a relativistic anti-dam** spin-orbit torque (SOT) in structures with broken space-inversion symmetry. The alternative… ▽ More Recent observations of current-induced magnetization switching at ferromagnet/normal-conductor interfaces have important consequences for future magnetic memory technology. In one interpretation, the switching originates from carriers with spin-dependent scattering giving rise to a relativistic anti-dam** spin-orbit torque (SOT) in structures with broken space-inversion symmetry. The alternative interpretation combines the relativistic spin Hall effect (SHE), making the normal-conductor an injector of a spin-current, with the non-relativistic spin-transfer torque (STT) in the ferromagnet. Remarkably, the SHE in these experiments originates from the Berry phase effect in the band structure of a clean crystal and the anti-dam** STT is also based on a disorder-independent transfer of spin from carriers to magnetization. Here we report the observation of an anti-dam** SOT stemming from an analogous Berry phase effect to the SHE. The SOT alone can therefore induce magnetization dynamics based on a scattering-independent principle. The ferromagnetic semiconductor (Ga,Mn)As we use has a broken space-inversion symmetry in the crystal. This allows us to consider a bare ferromagnetic element which eliminates by design any SHE related contribution to the spin torque. We provide an intuitive picture of the Berry phase origin of the anti-dam** SOT and a microscopic modeling of measured data. △ Less

Submitted 8 June, 2013; originally announced June 2013.

Comments: Send to: [email protected]

Spin and Orbital Splitting in Ferromagnetic Contacted Single Wall Carbon Nanotube Devices

Authors: K. Y. Wang, A. M. Blackburn, H. F. Wang, J. Wunderlich, D. A. Williams

Abstract: We observed the coulomb blockade phenomena in ferromagnetic contacting single wall semiconducting carbon nanotube devices. No obvious Coulomb peaks shift was observed with existing only the Zeeman splitting at 4K. Combining with other effects, the ferromagnetic leads prevent the orbital spin states splitting with magnetic field up to 2 Tesla at 4K. With increasing magnetic field further, both posi… ▽ More We observed the coulomb blockade phenomena in ferromagnetic contacting single wall semiconducting carbon nanotube devices. No obvious Coulomb peaks shift was observed with existing only the Zeeman splitting at 4K. Combining with other effects, the ferromagnetic leads prevent the orbital spin states splitting with magnetic field up to 2 Tesla at 4K. With increasing magnetic field further, both positive or negative coulomb peaks shift slopes are observed associating with clockwise and anticlockwise orbital state splitting. The strongly suppressed/enhanced of the conductance has been observed associating with the magnetic field induced orbital states splitting/converging. △ Less

Submitted 6 March, 2013; originally announced March 2013.

Journal ref: APPLIED PHYSICS LETTERS 102, 093508 (2013)

Storing magnetic information in IrMn/MgO/Ta tunnel junctions via field-cooling

Authors: D. Petti, E. Albisetti, H. Reichlová, J. Gazquez, M. Varela, M. Molina-Ruiz, A. F. Lopeandía, K. Olejník, V. Novák, I. Fina, B. Dkhil, J. Hayakawa, X. Marti, J. Wunderlich, T. Jungwirth, R. Bertacco

Abstract: Tunneling junctions containing no ferromagnetic elements have been fabricated and we show that distinct resistance states can be set by field cooling the devices from above the Néel along different orientations. Variations of the resistance up to 10% are found upon field cooling in applied fields of 2T, in-plane or out of plane. Below TN, we found that the metastable states are insensitive to magn… ▽ More Tunneling junctions containing no ferromagnetic elements have been fabricated and we show that distinct resistance states can be set by field cooling the devices from above the Néel along different orientations. Variations of the resistance up to 10% are found upon field cooling in applied fields of 2T, in-plane or out of plane. Below TN, we found that the metastable states are insensitive to magnetic fields thus constituting a memory element robust against external magnetic fields. Our work provides the demonstration of an electrically readable magnetic memory device, which contains no ferromagnetic elements and stores the information in an antiferromagnetic active layer. △ Less

Submitted 15 February, 2013; originally announced February 2013.

Spin gating electrical current

Authors: C. Ciccarelli, L. P. Zarbo, A. C. Irvine, R. P. Campion, B. L. Gallagher, J. Wunderlich, T. Jungwirth, A. J. Ferguson

Abstract: We use an aluminium single electron transistor with a magnetic gate to directly quantify the chemical potential anisotropy of GaMnAs materials. Uniaxial and cubic contributions to the chemical potential anisotropy are determined from field rotation experiments. In performing magnetic field sweeps we observe additional isotropic magnetic field dependence of the chemical potential which shows a non-… ▽ More We use an aluminium single electron transistor with a magnetic gate to directly quantify the chemical potential anisotropy of GaMnAs materials. Uniaxial and cubic contributions to the chemical potential anisotropy are determined from field rotation experiments. In performing magnetic field sweeps we observe additional isotropic magnetic field dependence of the chemical potential which shows a non-monotonic behavior. The observed effects are explained by calculations based on the $\mathbf{k}\cdot\mathbf{p}$ kinetic exchange model of ferromagnetism in GaMnAs. Our device inverts the conventional approach for constructing spin transistors: instead of spin-transport controlled by ordinary gates we spin-gate ordinary charge transport. △ Less

Submitted 23 April, 2012; v1 submitted 12 March, 2012; originally announced March 2012.

Comments: 5 pages, 4 figures

Spin Hall transistor with electrical spin injection

Authors: K. Olejnik, J. Wunderlich, A. C. Irvine, R. P. Campion, V. P. Amin, Jairo Sinova, T. Jungwirth

Abstract: The realization of a viable semiconductor transistor and information processing devices based on the electron spin has fueled intense basic research of three key elements: injection, detection, and manipulation of spins in the semiconductor channel. The inverse spin Hall effect (iSHE) detection of spins injected optically in a 2D GaAs and manipulated by a gate-voltage dependent internal spin-orbit… ▽ More The realization of a viable semiconductor transistor and information processing devices based on the electron spin has fueled intense basic research of three key elements: injection, detection, and manipulation of spins in the semiconductor channel. The inverse spin Hall effect (iSHE) detection of spins injected optically in a 2D GaAs and manipulated by a gate-voltage dependent internal spin-orbit field has recently led to the experimental demonstration of a spin transistor logic device. The aim of the work presented here is to demonstrate in one device the iSHE detection combined with an electrical spin injection and manipulation. We use a 3D GaAs channel for which efficient electrical spin injection from Fe Schottky contacts has been demonstrated in previous works. In order to experimentally separate the strong ordinary Hall effect signal from the iSHE in the semiconductor channel we developed epitaxial ultrathin-Fe/GaAs contacts allowing for Hanle spin-precession measurements in applied in-plane magnetic fields. Electrical injection and detection is combined in our transistor structure with electrically manipulated spin distribution and spin current which, unlike the previously utilized electrical manipulations of the spin-orbit field or ballistic spin transit time, is well suited for the diffusive 3D GaAs spin channel. The magnitudes and external field dependencies of the measured signals are quantitatively analyzed using simultaneous spin detection by the non-local spin valve effect and modeled by solving the drift-diffusion and Hall-cross response equations for the parameters of the studied microstructure. △ Less

Submitted 4 February, 2012; originally announced February 2012.

Comments: 29 pages, 11 figures

Electrical measurement of antiferromagnetic moments in exchange-coupled IrMn/NiFe stacks

Authors: X. Marti, B. G. Park, J. Wunderlich, H. Reichlova, Y. Kurosaki, M. Yamada, H. Yamamoto, A. Nishide, J. Hayakawa, H. Takahashi, T. Jungwirth

Abstract: We employ the recently discovered antiferromagnetic tunneling anisotropic magnetoresistance to study the behavior of antiferromagnetically ordered moments in IrMn exchange coupled to NiFe. Experiments performed by common laboratory tools for magnetization and electrical transport measurements allow us to directly link the broadening of the NiFe hysteresis loop and its shift (exchange bias) to the… ▽ More We employ the recently discovered antiferromagnetic tunneling anisotropic magnetoresistance to study the behavior of antiferromagnetically ordered moments in IrMn exchange coupled to NiFe. Experiments performed by common laboratory tools for magnetization and electrical transport measurements allow us to directly link the broadening of the NiFe hysteresis loop and its shift (exchange bias) to the rotation and pinning of antiferromagnetic moments in IrMn. At higher temperatures, the broadened loops show zero shift which correlates with the observation of fully rotating antiferromagnetic moments inside the IrMn film. The onset of exchange bias at lower temperatures is linked to a partial rotation between distinct metastable states and pinning of the IrMn antiferromagnetic moments in these states. The observation complements common pictures of exchange bias and reveals the presence of an electrically measurable memory effect in an antiferromagnet. △ Less

Submitted 10 August, 2011; originally announced August 2011.

Comments: 4 pages, 5 figures

Spin-orbit driven ferromagnetic resonance: A nanoscale magnetic characterisation technique

Authors: D. Fang, H. Kurebayashi, J. Wunderlich, K. Vyborny, L. P. Zarbo, R. P. Campion, A. Casiraghi, B. L. Gallagher, T. Jungwirth, A. J. Ferguson

Abstract: We demonstrate a scalable new ferromagnetic resonance (FMR) technique based on the spin-orbit interaction. An alternating current drives FMR in uniform ferromagnetic structures patterned from the dilute magnetic semiconductors (Ga,Mn)As and (Ga,Mn)(As,P). This allows the direct measurement of magnetic anisotropy coefficients and dam** parameters for individual nano-bars. By analysing the ferroma… ▽ More We demonstrate a scalable new ferromagnetic resonance (FMR) technique based on the spin-orbit interaction. An alternating current drives FMR in uniform ferromagnetic structures patterned from the dilute magnetic semiconductors (Ga,Mn)As and (Ga,Mn)(As,P). This allows the direct measurement of magnetic anisotropy coefficients and dam** parameters for individual nano-bars. By analysing the ferromagnetic resonance lineshape, we perform vector magnetometry on the current-induced driving field, observing contributions with symmetries of both the Dresselhaus and Rashba spin-orbit interactions. △ Less

Submitted 10 December, 2010; originally announced December 2010.

Comments: 4 figures

Journal ref: Nature Nanotechnology, 6 413 (2011)

Tunneling anisotropic magnetoresistance of NiFe/IrMn/MgO/Pt stack: An antiferromagnet based spin-valve

Authors: B. G. Park, J. Wunderlich, X. Marti, V. Holy, Y. Kurosaki, M. Yamada, H. Yamamoto, A. Nishide, J. Hayakawa, H. Takahashi, A. B. Shick, T. Jungwirth

Abstract: Spin-valve is a microelectronic device in which high and low resistance states are realized by utilizing both charge and spin of carriers. Spin-valve structures used in modern hard drive read-heads and magnetic random access memories comprise two ferromagnetic (FM) electrodes whose relative magnetization orientations can be switched between parallel and antiparallel configurations, yielding the de… ▽ More Spin-valve is a microelectronic device in which high and low resistance states are realized by utilizing both charge and spin of carriers. Spin-valve structures used in modern hard drive read-heads and magnetic random access memories comprise two ferromagnetic (FM) electrodes whose relative magnetization orientations can be switched between parallel and antiparallel configurations, yielding the desired giant or tunneling magnetoresistance effect. In this paper we demonstrate >100$% spin-valve-like signal in a NiFe/IrMn/MgO/Pt stack with an antiferromagnet (AFM) on one side and a non-magnetic metal on the other side of the tunnel barrier. FM moments in NiFe are reversed by external fields <50mT and the exchange-spring effect of NiFe on IrMn induces rotation of AFM moments in IrMn which is detected by the measured tunneling anisotropic magnetoresistance (TAMR). Our work demonstrates a spintronic element whose transport characteristics are governed by an AFM. It demonstrates that sensitivity to low magnetic fields can be combined with large, spin-orbit coupling induced magneto-transport anisotropy using a single magnetic electrode. The AFM-TAMR provides means to study magnetic characteristics of AFM films by an electronic transport measurement. △ Less

Submitted 14 November, 2010; originally announced November 2010.

Comments: 8 pages, 4 figures

Modeling of diffusion of injected electron spins in spin-orbit coupled microchannels

Authors: Liviu P. Zarbo, Jairo Sinova, Irena Knezevic, J. Wunderlich, T. Jungwirth

Abstract: We report on a theoretical study of spin dynamics of an ensemble of spin-polarized electrons injected in a diffusive microchannel with linear Rashba and Dresselhaus spin-orbit coupling. We explore the dependence of the spin-precession and spin-diffusion lengths on the strengths of spin-orbit interaction and external magnetic fields, microchannel width, and orientation. Our results are based on num… ▽ More We report on a theoretical study of spin dynamics of an ensemble of spin-polarized electrons injected in a diffusive microchannel with linear Rashba and Dresselhaus spin-orbit coupling. We explore the dependence of the spin-precession and spin-diffusion lengths on the strengths of spin-orbit interaction and external magnetic fields, microchannel width, and orientation. Our results are based on numerical Monte Carlo simulations and on approximate analytical formulas, both treating the spin dynamics quantum-mechanically. We conclude that spin-diffusion lengths comparable or larger than the precession-length occur i) in the vicinity of the persistent spin helix regime for arbitrary channel width, and ii) in channels of similar or smaller width than the precession length, independent of the ratio of Rashba and Dresselhaus fields. For similar strengths of the Rashba and Dresselhaus fields, the steady-state spin-density oscillates or remains constant along the channel for channels parallel to the in-plane diagonal crystal directions. An oscillatory spin-polarization pattern tilted by 45$^{\circ}$ with respect to the channel axis is predicted for channels along the main cubic crystal directions. For typical experimental system parameters, magnetic fields of the order of Tesla are required to affect the spin-diffusion and spin-precession lengths. △ Less

Submitted 20 November, 2010; v1 submitted 24 August, 2010; originally announced August 2010.

Comments: Replaced with final version (some explanations and figures improved). 8 pages, 6 figures

Journal ref: Phys. Rev. B 82, 205320 (2010)

Spin Hall effect transistor

Authors: J. Wunderlich, B. G. Park, A. C. Irvine, L. P. Zarbo, E. Rozkotova, P. Nemec, V. Novak, Jairo Sinova, T. Jungwirth

Abstract: Spin transistors and spin Hall effects have been two separate leading directions of research in semiconductor spintronics which seeks new paradigms for information processing technologies. We have brought the two directions together to realize an all-semiconductor spin Hall effect transistor. Our scheme circumvents semiconductor-ferromagnet interface problems of the original Datta-Das spin transis… ▽ More Spin transistors and spin Hall effects have been two separate leading directions of research in semiconductor spintronics which seeks new paradigms for information processing technologies. We have brought the two directions together to realize an all-semiconductor spin Hall effect transistor. Our scheme circumvents semiconductor-ferromagnet interface problems of the original Datta-Das spin transistor concept and demonstrates the utility of the spin Hall effects in microelectronics. The devices use diffusive transport and operate without electrical current, i.e., without Joule heating in the active part of the transistor. We demonstrate a spin AND logic function in a semiconductor channel with two gates. Our experimental study is complemented by numerical Monte Carlo simulations of spin-diffusion through the transistor channel. △ Less

Submitted 17 August, 2010; originally announced August 2010.

Comments: 11 pages, 3 figures

Antiferromagnetic I-Mn-V semiconductors

Authors: T. Jungwirth, V. Novak, X. Marti, M. Cukr, F. Maca, A. B. Shick, J. Masek, P. Horodyska, P. Nemec, V. Holy, J. Zemek, P. Kuzel, I. Nemec, B. L. Gallagher, R. P. Campion, C. T. Foxon, J. Wunderlich

Abstract: After decades of research, the low Curie temperature of ferromagnetic semiconductors remains the key problem in the development of magnetic semiconductor spintronic technologies. Removing this roadblock might require a change of the field's basic materials paradigm by looking beyond ferromagnets. Recent studies of relativistic magnetic and magnetotransport anisotropy effects, which in principle ar… ▽ More After decades of research, the low Curie temperature of ferromagnetic semiconductors remains the key problem in the development of magnetic semiconductor spintronic technologies. Removing this roadblock might require a change of the field's basic materials paradigm by looking beyond ferromagnets. Recent studies of relativistic magnetic and magnetotransport anisotropy effects, which in principle are equally well present in materials with ferromagnetically and antiferromagnetically ordered spins, have inspired our search for antiferromagnetic semiconductors suitable for high-temperature spintronics. Since these are not found among the magnetic counterparts of common III-V or II-VI semi- conductors, we turn the attention in this paper to high N éel temperature I-II-V magnetic compounds whose electronic structure has not been previously identified. Our combined experimental and theoretical work on LiMnAs provides basic prerequisite for the systematic research of this class of materials by demonstrating the feasibility to grow single crystals of group-I alkali metal compounds by molecular beam epitaxy, by demonstrating the semiconducting band structure of the I-Mn-V's, and by analyzing their spin-orbit coupling characteristics favorable for spintronics. △ Less

Submitted 1 July, 2010; originally announced July 2010.

Comments: 11 pages, 5 figures

Current-driven domain wall motion across a wide temperature range in a (Ga,Mn)(As,P) device

Authors: K. Y. Wang, K. W. Edmonds, A. C. Irvine, G. Tatara, E. De Ranieri, J. Wunderlich, K. Olejnik, A. W. Rushforth, R. P. Campion, D. A. Williams, C. T. Foxon, B. L. Gallagher

Abstract: Current-driven magnetic domain wall motion is demonstrated in the quaternary ferromagnetic semiconductor (Ga,Mn)(As,P) at temperatures well below the ferromagnetic transition temperature, with critical currents of the order 10^5Acm^-2. This is enabled by a much weaker domain wall pinning compared to (Ga,Mn)As layers grown on a strain-relaxed buffer layer. The critical current is shown to be compar… ▽ More Current-driven magnetic domain wall motion is demonstrated in the quaternary ferromagnetic semiconductor (Ga,Mn)(As,P) at temperatures well below the ferromagnetic transition temperature, with critical currents of the order 10^5Acm^-2. This is enabled by a much weaker domain wall pinning compared to (Ga,Mn)As layers grown on a strain-relaxed buffer layer. The critical current is shown to be comparable with theoretical predictions. The wide temperature range over which domain wall motion can be achieved indicates that this is a promising system for develo** an improved understanding of spin-transfer torque in systems with strong spin-orbit interaction. △ Less

Submitted 30 December, 2010; v1 submitted 6 May, 2010; originally announced May 2010.

Comments: 12 pages, 3 figures

Journal ref: APPLIED PHYSICS LETTERS 97, 262102 (2010)

Spin-orbit coupling induced anisotropy effects in bimetallic antiferromagnets: A route towards antiferromagnetic spintronics

Authors: Alexander B. Shick, Sergii Khmelevskyi, Oleg N. Mryasov, Joerg Wunderlich, Tomas Jungwirth

Abstract: Magnetic anisotropy phenomena in bimetallic antiferromagnets Mn$_2$Au and MnIr are studied by first-principles density functional theory calculations. We find strong and lattice-parameter dependent magnetic anisotropies of the ground state energy, chemical potential, and density of states, and attribute these anisotropies to combined effects of large moment on the Mn 3$d$ shell and large spin-or… ▽ More Magnetic anisotropy phenomena in bimetallic antiferromagnets Mn$_2$Au and MnIr are studied by first-principles density functional theory calculations. We find strong and lattice-parameter dependent magnetic anisotropies of the ground state energy, chemical potential, and density of states, and attribute these anisotropies to combined effects of large moment on the Mn 3$d$ shell and large spin-orbit coupling on the 5$d$ shell of the noble metal. Large magnitudes of the proposed effects can open a route towards spintronics in compensated antiferromagnets without involving ferromagnetic elements. △ Less

Submitted 10 February, 2010; originally announced February 2010.

Comments: 4 pages, 2 figures

Journal ref: Phys. Rev. B 81, 212409 (2010)

Domain Wall Resistance in Perpendicular (Ga,Mn)As: dependence on pinning

Authors: K. Y. Wang, K. W. Edmonds, A. C. Irvine, J. Wunderlich, K. Olejnik, A. W. Rushforth, R. P. Campion, D. A. Williams, C. T. Foxon, B. L. Gallagher

Abstract: We have investigated the domain wall resistance for two types of domain walls in a (Ga,Mn)As Hall bar with perpendicular magnetization. A sizeable positive intrinsic DWR is inferred for domain walls that are pinned at an etching step, which is quite consistent with earlier observations. However, much lower intrinsic domain wall resistance is obtained when domain walls are formed by pinning lines i… ▽ More We have investigated the domain wall resistance for two types of domain walls in a (Ga,Mn)As Hall bar with perpendicular magnetization. A sizeable positive intrinsic DWR is inferred for domain walls that are pinned at an etching step, which is quite consistent with earlier observations. However, much lower intrinsic domain wall resistance is obtained when domain walls are formed by pinning lines in unetched material. This indicates that the spin transport across a domain wall is strongly influenced by the nature of the pinning. △ Less

Submitted 29 December, 2010; v1 submitted 15 January, 2010; originally announced January 2010.

Comments: 9 pages, 3 figures

Journal ref: J. Magn. Magn. Mater 322,3481(2010)