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Detection of graphene's divergent orbital diamagnetism at the Dirac point
Authors:
J. Vallejo,
N. J. Wu,
C. Fermon,
M. Pannetier-Lecoeur,
T. Wakamura,
K. Watanabe,
T. Tanigushi,
T. Pellegrin,
A. Bernard,
S. Daddinounou,
V. Bouchiat,
S. Guéron,
M. Ferrier,
G. Montambaux,
H. Bouchiat
Abstract:
The electronic properties of graphene have been intensively investigated over the last decade, and signatures of the remarkable features of its linear Dirac spectrum have been displayed using transport and spectroscopy experiments. In contrast, the orbital magnetism of graphene, which is one of the most fundamental signature of the characteristic Berry phase of graphene's electronic wave functions…
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The electronic properties of graphene have been intensively investigated over the last decade, and signatures of the remarkable features of its linear Dirac spectrum have been displayed using transport and spectroscopy experiments. In contrast, the orbital magnetism of graphene, which is one of the most fundamental signature of the characteristic Berry phase of graphene's electronic wave functions, has not yet been measured in a single flake. In particular, the striking prediction of a divergent diamagnetic response at zero do** calls for an experimental test. Using a highly sensitive Giant Magnetoresistance sensor (GMR) we have measured the gate voltage-dependent magnetization of a single graphene monolayer encapsulated between boron nitride crystals. The signal exhibits a diamagnetic peak at the Dirac point whose magnetic field and temperature dependences agree with theoretical predictions starting from the work of Mc Clure \cite{McClure1956}. Our measurements open a new field of investigation of orbital currents in graphene and 2D topological materials, offering a new means to monitor Berry phase singularities and explore correlated states generated by combined effects of Coulomb interactions, strain or moiré potentials.
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Submitted 21 December, 2021; v1 submitted 9 December, 2020;
originally announced December 2020.
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Spin-orbit-enhanced robustness of supercurrent in graphene/WS$_2$ Josephson junctions
Authors:
T. Wakamura,
N. J. Wu,
A. D. Chepelianskii,
S. Guéron,
M. Och,
M. Ferrier,
T. Taniguchi,
K. Watanabe,
C. Mattevi,
H. Bouchiat
Abstract:
We demonstrate enhanced robustness of the supercurrent through graphene-based Josephson junctions in which strong spin-orbit interactions (SOIs) are induced. We compare the persistence of a supercurrent at high magnetic fields between Josephson junctions with graphene on hexagonal boron-nitride and graphene on WS$_2$, where strong SOIs are induced via the proximity effect. We find that in the shor…
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We demonstrate enhanced robustness of the supercurrent through graphene-based Josephson junctions in which strong spin-orbit interactions (SOIs) are induced. We compare the persistence of a supercurrent at high magnetic fields between Josephson junctions with graphene on hexagonal boron-nitride and graphene on WS$_2$, where strong SOIs are induced via the proximity effect. We find that in the shortest junctions both systems display signatures of induced superconductivity, characterized by a suppressed differential resistance at a low current, in magnetic fields up to 1 T. In longer junctions however, only graphene on WS$_2$ exhibits induced superconductivity features in such high magnetic fields, and they even persist up to 7 T. We argue that these robust superconducting signatures arise from quasi-ballistic edge states stabilized by the strong SOIs induced in graphene by WS$_2$.
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Submitted 1 January, 2021; v1 submitted 7 September, 2020;
originally announced September 2020.
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Evidance for an Oxygen Diffusion Model for the Electric Pulse Induced Resistance Change Effect in Oxides
Authors:
Y. B. Nian,
J. Strozier,
N. J. Wu,
X. Chen,
A. Ignatiev
Abstract:
Electric pulse induced resistance (EPIR) switching hysteresis loops for Pr0.7Ca0.7MnO3 (PCMO) perovskite oxide films were found to exhibit an additional sharp "shuttle peak" around the negative pulse maximum for films deposited in an oxygen deficient ambient. The device resistance hysteresis loop consists of stable high resistance and low resistance states, and transition regions between them. T…
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Electric pulse induced resistance (EPIR) switching hysteresis loops for Pr0.7Ca0.7MnO3 (PCMO) perovskite oxide films were found to exhibit an additional sharp "shuttle peak" around the negative pulse maximum for films deposited in an oxygen deficient ambient. The device resistance hysteresis loop consists of stable high resistance and low resistance states, and transition regions between them. The resistance relaxation of the "shuttle peak" and its temperature behavior as well as the resistance relaxation in the transition regions were studied, and indicate that the resistance switching relates to oxygen diffusion with activation energy about 0.4eV. An oxygen diffusion model with the oxygen ions (vacancies) as the active agent is proposed for the non-volatile resistance switching effect in PCMO.
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Submitted 22 February, 2006; v1 submitted 21 February, 2006;
originally announced February 2006.
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A Study of Apparent Symmetry Breakdown in Perovskite Oxide-based Symmetric RRAM Devices
Authors:
X. Chen,
J. Strozier,
N. J. Wu,
A. Ignatiev,
Y. B. Nian
Abstract:
A new model of a symmetric two-terminal non-volatile RRAM device based on Perovskite oxide thin film materials, specifically Pr1-xCaxMnO3 (PCMO), is proposed and analyzed. The model consists of two identical half-parts, which are completely characterized by the same resistance verses pulse voltage hysteresis loop, connected together in series. Even though the modeled device is physically symmetr…
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A new model of a symmetric two-terminal non-volatile RRAM device based on Perovskite oxide thin film materials, specifically Pr1-xCaxMnO3 (PCMO), is proposed and analyzed. The model consists of two identical half-parts, which are completely characterized by the same resistance verses pulse voltage hysteresis loop, connected together in series. Even though the modeled device is physically symmetric with respect to the direction of current, it is found to exhibit switching of the resistance with the application of voltage pulses of sufficient amplitude and of different polarities. The apparent breakdown of parity conservation of the device is attributed to changes in resistance of the active material layer near the electrodes during switching. Thus the switching is history dependent, a feature that can be very useful for the construction of real non-volatile memory devices. An actual symmetric device, not previously reported in the literature and based on the proposed model, is fabricated in the PCMO material system. Measurements of the resistance of this new device generated an experimental hysteresis curve that matches well the calculated hysteresis curve of the model, thus confirming the features predicated by the new symmetric model.
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Submitted 3 October, 2005;
originally announced October 2005.
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Resistance profile measurements on a symmetric electrical pulse induced resistance change device
Authors:
X. Chen,
J. Strozier,
N. J. Wu,
A. Ignatiev
Abstract:
We report the first direct measurements of the micro scale resistance profile between the terminals of a two terminal symmetric thin film Pr0.7Ca0.3MnO3 electrical pulse induced resistance change device composed of a Pr0.7Ca0.3MnO3 active layer. The symmetric device is one in which the electrode shape, size, composition, and deposition processing are identical. We show that under certain limitat…
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We report the first direct measurements of the micro scale resistance profile between the terminals of a two terminal symmetric thin film Pr0.7Ca0.3MnO3 electrical pulse induced resistance change device composed of a Pr0.7Ca0.3MnO3 active layer. The symmetric device is one in which the electrode shape, size, composition, and deposition processing are identical. We show that under certain limitations of pulse switching voltage, such a symmetric electrical pulse induced resistance change device can exhibit either no net device resistance switching at room temperature, or bipolar switching with the resistance hysteresis curve exhibiting a "table leg" structure. The resistance measurements are made using surface scanning Kelvin probe microscopy, which allows for the measurement of the profile of resistance from one electrode, across the Pr0.7Ca0.3MnO3 material and into the second electrode, both before resistance switching and after switching. The results show that resistance switching in the symmetric device occurs primarily in the interface region within about 1 to 3 micron of the electrical contact surface. Resistance switching is also observed in the bulk Pr0.7Ca0.3MnO3 material although at a lower level. Symmetry considerations for a two terminal symmetric device that can switch resistance are discussed, and the data reported here is consistent with the symmetric model previously developed.
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Submitted 19 July, 2005; v1 submitted 18 July, 2005;
originally announced July 2005.
