Cation exchange synthesis of AgBiS$_2$ quantum dots for highly efficient solar cells
Authors:
Alina Senina,
Anatol Prudnikau,
Angelika Wrzesińska-Lashkova,
Yana Vaynzof,
Fabian Paulus
Abstract:
Silver bismuth sulfide (AgBiS$_2$) nanocrystals have emerged as a promising eco-friendly, low-cost solar cell absorber material. Their direct synthesis often relies on the hot-injection method, requiring the application of high temperatures and vacuum for prolonged times. Here, we demonstrate an alternative synthetic approach via a cation exchange reaction. In the first-step, bis(stearoyl)sulfide…
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Silver bismuth sulfide (AgBiS$_2$) nanocrystals have emerged as a promising eco-friendly, low-cost solar cell absorber material. Their direct synthesis often relies on the hot-injection method, requiring the application of high temperatures and vacuum for prolonged times. Here, we demonstrate an alternative synthetic approach via a cation exchange reaction. In the first-step, bis(stearoyl)sulfide is used as an air-stable sulfur precursor for the synthesis of small, monodisperse Ag2S nanocrystals at room-temperature. In a second step, bismuth cations are incorporated into the nanocrystal lattice to form ternary AgBiS$_2$ nanocrystals, without altering their size and shape. When implemented into photovoltaic devices, AgBiS$_2$ nanocrystals obtained by cation exchange reach power conversion efficiencies of up to 7.35%, demonstrating the efficacy of the new synthetic approach for the formation of high-quality, ternary semiconducting nanocrystals.
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Submitted 17 April, 2024;
originally announced April 2024.
SnS2 thin film with in-situ and controllable Sb do** via atomic layer deposition for optoelectronic applications
Authors:
Dong-Ho Shin,
Jun Yang,
Samik Mukherjee,
Amin Bahrami,
Sebastian Lehmann,
Noushin Nasiri,
Fabian Krahl,
Chi Pang,
Angelika Wrzesińska-Lashkova,
Yana Vaynzof,
Steve Wohlrab,
Alexey Popov,
Kornelius Nielsch
Abstract:
SnS2 stands out as a highly promising two-dimensional material with significant potential for applications in the field of electronics. Numerous attempts have been undertaken to modulate the physical properties of SnS2 by do** with various metal ions. Here, we deposited a series of Sb-doped SnS2 via atomic layer deposition (ALD) super-cycle process and compared its crystallinity, composition, an…
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SnS2 stands out as a highly promising two-dimensional material with significant potential for applications in the field of electronics. Numerous attempts have been undertaken to modulate the physical properties of SnS2 by do** with various metal ions. Here, we deposited a series of Sb-doped SnS2 via atomic layer deposition (ALD) super-cycle process and compared its crystallinity, composition, and optical properties to those of pristine SnS2. We found that the increase in the concentration of Sb is accompanied by a gradual reduction in the Sn and S binding energies. The work function is increased upon Sb do** from 4.32 eV (SnS2) to 4.75 eV (Sb-doped SnS2 with 9:1 ratio). When integrated into photodetectors, the Sb-doped SnS2 showed improved performances, demonstrating increased peak photoresponsivity values from 19.5 A/W to 27.8 A/W at 405 nm, accompanied by an improvement in response speed. These results offer valuable insights into next-generation optoelectronic applications based on SnS2.
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Submitted 15 January, 2024;
originally announced January 2024.