Impact of MBE-grown (In,Ga)As/GaAs metamorphic buffers on excitonic and optical properties of single quantum dots with single-photon emission tuned to the telecom range
Authors:
Paweł Wyborski,
Michał Gawełczyk,
Paweł Podemski,
Piotr Andrzej Wroński,
Mirosława Pawlyta,
Sandeep Gorantla,
Fauzia Jabeen,
Sven Höfling,
Grzegorz Sęk
Abstract:
Tuning GaAs-based quantum emitters to telecom wavelengths makes it possible to use the existing mature technology for applications in, e.g., long-haul ultra-secure communication in the fiber networks. A promising method re-developed recently is to use a metamorphic InGaAs buffer that redshifts the emission by reducing strain. However, the impact of such a buffer causes also a simultaneous modifica…
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Tuning GaAs-based quantum emitters to telecom wavelengths makes it possible to use the existing mature technology for applications in, e.g., long-haul ultra-secure communication in the fiber networks. A promising method re-developed recently is to use a metamorphic InGaAs buffer that redshifts the emission by reducing strain. However, the impact of such a buffer causes also a simultaneous modification of other quantum dot properties. Knowledge of these effects is crucial for actual implementations of QD-based non-classical light sources for quantum communication schemes. Here, we thoroughly study single GaAs-based quantum dots grown by molecular-beam epitaxy on specially designed, digital-alloy InGaAs metamorphic buffers. With a set of structures varying in the buffer indium content and providing quantum dot emission through the telecom spectral range up to 1.6 $μ$m, we analyze the impact of the buffer and its composition on QD structural and optical properties. We identify the mechanisms of quantum dot emission shift with varying buffer composition. We also look into the charge trap** processes and compare excitonic properties for different growth conditions with single-dot emission successfully shifted to both, the second and the third telecom windows.
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Submitted 26 November, 2023; v1 submitted 29 April, 2023;
originally announced May 2023.
Resonance fluorescence from an atomic-quantum-memory compatible single photon source based on GaAs droplet quantum dots
Authors:
Laxmi Narayan Tripathi,
Yu-Ming He,
Lukasz Dusanowski,
Piotr Andrzej Wronski,
Chao-Yang Lu,
Christian Schneider,
Sven Hoefling
Abstract:
Single photon sources, which are compatible with quantum memories are an important component of quantum networks. In this article, we show optical investigations on isolated GaAs/Al$_{0.25}$Ga$_{0.75}$As quantum dots grown via droplet epitaxy, which emit single photons on resonance with the Rb-87-D$_2$ line (780 nm). Under continuous wave resonant excitation conditions, we observe bright, clean an…
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Single photon sources, which are compatible with quantum memories are an important component of quantum networks. In this article, we show optical investigations on isolated GaAs/Al$_{0.25}$Ga$_{0.75}$As quantum dots grown via droplet epitaxy, which emit single photons on resonance with the Rb-87-D$_2$ line (780 nm). Under continuous wave resonant excitation conditions, we observe bright, clean and narrowband resonance fluorescence emission from such a droplet quantum dot. Furthermore, the second-order correlation measurement clearly demonstrates the single photon emission from this resonantly driven transition. Spectrally resolved resonance fluorescence of a similar quantum dot yields a linewidth as narrow as 660 MHz ($ 2.7~μeV $), which corresponds to a coherence time of 0.482 ns. The observed linewidth is the smallest reported so far for strain free GaAs quantum dots grown via the droplet method. We believe that this single photon source can be a prime candidate for applications in optical quantum networks.
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Submitted 27 June, 2018;
originally announced June 2018.
