Showing 1–12 of 12 results for author: Woods, J M

Elementary excitations of single-photon emitters in hexagonal Boron Nitride

Authors: Jonathan Pelliciari, Enrique Mejia, John M. Woods, Yanhong Gu, Jiemin Li, Saroj B. Chand, Shiyu Fan, Kenji Watanabe, Takashi Taniguchi, Valentina Bisogni, Gabriele Grosso

Abstract: Single-photon emitters serve as building blocks for many emerging concepts in quantum photonics. The recent identification of bright, tunable, and stable emitters in hexagonal boron nitride (hBN) has opened the door to quantum platforms operating across the infrared to ultraviolet spectrum. While it is widely acknowledged that defects are responsible for single-photon emitters in hBN, crucial deta… ▽ More Single-photon emitters serve as building blocks for many emerging concepts in quantum photonics. The recent identification of bright, tunable, and stable emitters in hexagonal boron nitride (hBN) has opened the door to quantum platforms operating across the infrared to ultraviolet spectrum. While it is widely acknowledged that defects are responsible for single-photon emitters in hBN, crucial details regarding their origin, electronic levels, and orbital involvement remain unknown. Here, we employ a combination of resonant inelastic X-ray scattering and photoluminescence spectroscopy in defective hBN unveiling an elementary excitation at 285 meV that gives rise to a plethora of harmonics correlated with single-photon emitters. We discuss the importance of N $π^*$ antibonding orbitals in sha** the electronic states of the emitters. The discovery of the elementary excitations of hBN provides new fundamental insights into quantum emission in low-dimensional materials, paving the way for future investigations in other platforms. △ Less

Submitted 14 February, 2024; originally announced February 2024.

Interaction-driven transport of dark excitons in 2D semiconductors with phonon-mediated optical readout

Authors: Saroj B. Chand, John M. Woods, Jiamin Quan, Enrique Mejia, Takashi Taniguchi, Kenji Watanabe, Andrea Alù, Gabriele Grosso

Abstract: The growing field of quantum information technology requires propagation of information over long distances with efficient readout mechanisms. Excitonic quantum fluids have emerged as a powerful platform for this task due to their straightforward electro-optical conversion. In two-dimensional transition metal dichalcogenides, the coupling between spin and valley provides exciting opportunities for… ▽ More The growing field of quantum information technology requires propagation of information over long distances with efficient readout mechanisms. Excitonic quantum fluids have emerged as a powerful platform for this task due to their straightforward electro-optical conversion. In two-dimensional transition metal dichalcogenides, the coupling between spin and valley provides exciting opportunities for harnessing, manipulating and storing bits of information. However, the large inhomogeneity of single layers cannot be overcome by the properties of bright excitons, hindering spin-valley transport. Nonetheless, the rich band structure supports dark excitonic states with strong binding energy and longer lifetime, ideally suited for long-range transport. Here we show that dark excitons can diffuse over several micrometers and prove that this repulsion-driven propagation is robust across non-uniform samples. The long-range propagation of dark states with an optical readout mediated by chiral phonons provides a new concept of excitonic devices for applications in both classical and quantum information technology. △ Less

Submitted 10 April, 2023; v1 submitted 1 December, 2022; originally announced December 2022.

Emergence of new optical resonances in single-layer transition metal dichalcogenides with atomic-size phase patterns

Authors: John M. Woods, Saroj B. Chand, Enrique Mejia, Takashi Taniguchi, Kenji Watanabe, Johannes Flick, Gabriele Grosso

Abstract: Atomic-scale control of light-matter interactions represent the ultimate frontier for many applications in photonics and quantum technology. Two-dimensional semiconductors, including transition metal dichalcogenides, are a promising platform to achieve such control due to the combination of an atomically thin geometry and convenient photophysical properties. Here, we demonstrate that a variety of… ▽ More Atomic-scale control of light-matter interactions represent the ultimate frontier for many applications in photonics and quantum technology. Two-dimensional semiconductors, including transition metal dichalcogenides, are a promising platform to achieve such control due to the combination of an atomically thin geometry and convenient photophysical properties. Here, we demonstrate that a variety of durable polymorphic structures can be combined to generate additional optical resonances beyond the standard excitons. We theoretically predict and experimentally show that atomic-sized patches of 1T phase within the 1H matrix form unique electronic bands that give rise to new and robust optical resonances with strong absorption, circularly polarized emission and long radiative lifetime. The atomic manipulation of two-dimensional semiconductors opens unexplored scenarios for light harvesting devices and exciton-based photonics. △ Less

Submitted 11 April, 2024; v1 submitted 26 September, 2022; originally announced September 2022.

Visualization of dark excitons in semiconductor monolayers for high-sensitivity strain sensing

Authors: Saroj B. Chand, John M. Woods, Enrique Mejia, Takashi Taniguchi, Kenji Watanabe, Gabriele Grosso

Abstract: Transition metal dichalcogenides (TMDs) are layered materials that have a semiconducting phase with many advantageous optoelectronic properties, including tightly bound excitons and spin-valley locking. In Tungsten-based TMDs, spin and momentum forbidden transitions give rise to dark excitons that typically are optically inaccessible but represent the lowest excitonic states of the system. Dark ex… ▽ More Transition metal dichalcogenides (TMDs) are layered materials that have a semiconducting phase with many advantageous optoelectronic properties, including tightly bound excitons and spin-valley locking. In Tungsten-based TMDs, spin and momentum forbidden transitions give rise to dark excitons that typically are optically inaccessible but represent the lowest excitonic states of the system. Dark excitons can deeply affect transport, dynamics and coherence of bright excitons, hampering device performance. Therefore, it is crucial to create conditions in which these excitonic states can be visualized and controlled. Here, we show that compressive strain in WS2 enables phonon scattering of photoexcited electrons between momentum valleys, enhancing the formation of dark intervalley excitons. We show that the emission and spectral properties of momentum-forbidden excitons are accessible and strongly depend on the local strain environment that modifies the band alignment. This mechanism is further exploited for strain sensing in two-dimensional semiconductors revealing a gauge factor exceeding 10^4. △ Less

Submitted 10 March, 2022; v1 submitted 9 January, 2022; originally announced January 2022.

A Gapped Phase in Semimetallic T$_{d}$-WTe$_{2}$ Induced by Lithium Intercalation

Authors: Meng**g Wang, Aakash Kumar, Hao Dong, John M. Woods, Joshua V. Pondick, Shiyu Xu, Peijun Guo, Diana Y. Qiu, Judy J. Cha

Abstract: The Weyl semimetal WTe$_{2}$ has shown several correlated electronic behaviors, such as the quantum spin Hall effect, superconductivity, ferroelectricity, and a possible exciton insulator state, all of which can be tuned by various physical and chemical approaches. Here, we discover a new electronic phase in WTe$_{2}$ induced by lithium intercalation. The new phase exhibits an increasing resistivi… ▽ More The Weyl semimetal WTe$_{2}$ has shown several correlated electronic behaviors, such as the quantum spin Hall effect, superconductivity, ferroelectricity, and a possible exciton insulator state, all of which can be tuned by various physical and chemical approaches. Here, we discover a new electronic phase in WTe$_{2}$ induced by lithium intercalation. The new phase exhibits an increasing resistivity with decreasing temperature and its carrier density is almost two orders of magnitude lower than the carrier density of the semi-metallic T$_{d}$ phase, probed by in situ Hall measurements as a function of lithium intercalation. Our theoretical calculations predict the new lithiated phase to be a charge density wave (CDW) phase with a bandgap of ~ 0.14 eV, in good agreement with the in situ transport data. The new phase is structurally distinct from the initial T$_{d}$ phase, characterized by polarization angle-dependent Raman spectroscopy, and large lattice distortions close to 6 % are predicted in the new phase. Thus, we report the first experimental evidence of CDW in T$_{d}$-WTe$_{2}$, projecting WTe$_{2}$ as a new playground for studying the interplay between CDW and superconductivity. Our finding of a new gapped phase in a two-dimensional (2D) semi-metal also demonstrates electrochemical intercalation as a powerful tuning knob for modulating electron density and phase stability in 2D materials. △ Less

Submitted 6 January, 2022; originally announced January 2022.

Comments: 6 figures

Heterointerface control over lithium-induced phase transitions in MoS2 heterostructures

Authors: Joshua V. Pondick, Aakash Kumar, Meng**g Wang, Sajad Yazdani, John M. Woods, Diana Y. Qiu, Judy J. Cha

Abstract: Phase transitions of two-dimensional materials and their heterostructures enable many applications including electrochemical energy storage, catalysis, and memory; however, the nucleation pathways by which these transitions proceed remain underexplored, prohibiting engineering control for these applications. Here, we demonstrate that the lithium intercalation-induced 2H-1T' phase transition in MoS… ▽ More Phase transitions of two-dimensional materials and their heterostructures enable many applications including electrochemical energy storage, catalysis, and memory; however, the nucleation pathways by which these transitions proceed remain underexplored, prohibiting engineering control for these applications. Here, we demonstrate that the lithium intercalation-induced 2H-1T' phase transition in MoS2 proceeds via nucleation of the 1T' phase at a heterointerface by monitoring the phase transition of MoS2/graphene and MoS2/hexagonal boron nitride (hBN) heterostructures with Raman spectroscopy in situ during intercalation. We observe that graphene-MoS2 heterointerfaces require an increase of 0.8 V in applied electrochemical potential to nucleate the 1T' phase in MoS2 compared to hBN-MoS2 heterointerfaces. The increased nucleation barrier at graphene-MoS2 heterointerfaces is due to the reduced charge transfer from lithium to MoS2 at the heterointerface as lithium also dopes graphene based on ab initio calculations. Further, we show that the growth of the 1T' domain propagates along the heterointerface, rather than through the interior of MoS2. Our results provide the first experimental observations of the heterogeneous nucleation and growth of intercalation-induced phase transitions in two-dimensional materials and heterointerface effects on their phase transition. △ Less

Submitted 5 July, 2021; originally announced July 2021.

Comments: 5 figures

Journal ref: ACS Applied Nano Materials 2021

Thickness Dependence of Magneto-transport Properties in Tungsten Ditelluride

Authors: Xurui Zhang, Vivek Kakani, John M. Woods, Judy J. Cha, Xiaoyan Shi

Abstract: We investigate the electronic structure of tungsten ditelluride (WTe$_2$) flakes with different thicknesses in magneto-transport studies. The temperature-dependent resistance and magnetoresistance (MR) measurements both confirm the breaking of carrier balance induced by thickness reduction, which suppresses the `turn-on' behavior and large positive MR. The Shubnikov-de-Haas oscillation studies fur… ▽ More We investigate the electronic structure of tungsten ditelluride (WTe$_2$) flakes with different thicknesses in magneto-transport studies. The temperature-dependent resistance and magnetoresistance (MR) measurements both confirm the breaking of carrier balance induced by thickness reduction, which suppresses the `turn-on' behavior and large positive MR. The Shubnikov-de-Haas oscillation studies further confirm the thickness-dependent change of electronic structure of WTe$_2$ and reveal a possible temperature-sensitive electronic structure change. Finally, we report the thickness-dependent anisotropy of Fermi surface, which reveals that multi-layer WTe$_2$ is an electronic 3D material and the anisotropy decreases as thickness decreases. △ Less

Submitted 29 April, 2021; originally announced April 2021.

Heterointerface effects on lithium-induced phase transitions in intercalated MoS2

Authors: Sajad Yazdani, Joshua V. Pondick, Aakash Kumar, Milad Yarali, John M. Woods, David J. Hynek, Diana Y. Qiu, Judy J. Cha

Abstract: The intercalation-induced phase transition of MoS2 from the semiconducting 2H to the semimetallic 1T' phase has been studied in detail for nearly a decade; however, the effects of a heterointerface between MoS2 and other two-dimensional (2D) crystals on the phase transition have largely been overlooked. Here, ab initio calculations show that intercalating Li at a MoS2-hexagonal boron nitride (hBN)… ▽ More The intercalation-induced phase transition of MoS2 from the semiconducting 2H to the semimetallic 1T' phase has been studied in detail for nearly a decade; however, the effects of a heterointerface between MoS2 and other two-dimensional (2D) crystals on the phase transition have largely been overlooked. Here, ab initio calculations show that intercalating Li at a MoS2-hexagonal boron nitride (hBN) interface stabilizes the 1T phase over the 2H phase of MoS2 by ~ 100 mJ m-2, suggesting that encapsulating MoS2 with hBN may lower the electrochemical energy needed for the intercalation-induced phase transition. However, in situ Raman spectroscopy of hBN-MoS2-hBN heterostructures during electrochemical intercalation of Li+ shows that the phase transition occurs at the same applied voltage for the heterostructure as for bare MoS2. We hypothesize that the predicted thermodynamic stabilization of the 1T'-MoS2-hBN interface is counteracted by an energy barrier to the phase transition imposed by the steric hindrance of the heterointerface. The phase transition occurs at lower applied voltages upon heating the heterostructure, which supports our hypothesis. Our study highlights that interfacial effects of 2D heterostructures can go beyond modulating electrical properties and can modify electrochemical and phase transition behaviors. △ Less

Submitted 27 November, 2020; originally announced November 2020.

Comments: 4 figures and 1 table

Journal ref: ACS Applied Materials Interfaces 2021

Cm2 Scale Synthesis of MoTe2 Thin Films with Large Grains and Layer Control David

Authors: David J. Hynek, Raivat M. Singhania, Shiyu Xu, Benjamin Davis, Lei Wang, Milad Yarali, Joshua V. Pondick, John M. Woods, Nicholas C. Strandwitz, Judy J. Cha

Abstract: Owing to the small energy differences between its polymorphs, MoTe2 can access a full spectrum of electronic states, from the 2H semiconducting state to the 1T semimetallic state, and from the Td Weyl semimetallic state to the superconducting state in the 1T and Td phase at low temperature. Thus, it is a model system for phase transformation studies as well as quantum phenomena such as the quantum… ▽ More Owing to the small energy differences between its polymorphs, MoTe2 can access a full spectrum of electronic states, from the 2H semiconducting state to the 1T semimetallic state, and from the Td Weyl semimetallic state to the superconducting state in the 1T and Td phase at low temperature. Thus, it is a model system for phase transformation studies as well as quantum phenomena such as the quantum spin Hall effect and topological superconductivity. Careful studies of MoTe2 and its potential applications require large area MoTe2 thin films with high crystallinity and thickness control. Here, we present cm2 scale synthesis of 2H MoTe2 thin films with layer control and large grains that span several microns. Layer control is achieved by controlling the initial thickness of the precursor MoOx thin films, which are deposited on sapphire substrates by atomic layer deposition and subsequently tellurized. Despite the van der Waals epitaxy, the precursor-substrate interface is found to critically determine the uniformity in thickness and grain size of the resulting MoTe2 films: MoTe2 grown on sapphire show uniform films while MoTe2 grown on amorphous SiO2 substrates form islands. This synthesis strategy decouples the layer control from the variabilities of growth conditions for robust growth results, and is applicable to grow other transition metal dichalcogenides with layer control. △ Less

Submitted 19 October, 2020; originally announced October 2020.

Comments: 6 figure

Journal ref: ACS Nano 2021

Crossover Between Weak Antilocalization and Weak Localization and Electron-Electron Interaction in Few-Layer WTe$_2$

Authors: Xurui Zhang, John M. Woods, Judy J. Cha, Xiaoyan Shi

Abstract: We report electron transport studies in an encapsulated few-layer WTe$_2$ at low temperatures and high magnetic fields. The magnetoconductance reveals a temperature-induced crossover between weak antilocalization (WAL) and weak localization (WL) in quantum diffusive regime. We show that the crossover clearly manifests coexistence and competition among several characteristic lengths, including the… ▽ More We report electron transport studies in an encapsulated few-layer WTe$_2$ at low temperatures and high magnetic fields. The magnetoconductance reveals a temperature-induced crossover between weak antilocalization (WAL) and weak localization (WL) in quantum diffusive regime. We show that the crossover clearly manifests coexistence and competition among several characteristic lengths, including the dephasing length, the spin-flip length, and the mean free path. In addition, low temperature conductance increases logarithmically with the increase of temperature indicating an interplay of electron-electron interaction (EEI) and spin-orbit coupling (SOC). We demonstrate the existences and quantify the strengths of EEI and SOC which are considered to be responsible for gap opening in the quantum spin hall state in WTe2 at the monolayer limit. △ Less

Submitted 8 June, 2020; originally announced June 2020.

Journal ref: Phys. Rev. B 102, 115161 (2020)

Suppression of magnetoresistance in thin $WTe_2$ flakes by surface oxidation

Authors: J. M. Woods, J. Shen, P. Kumaravadivel, Y. Pang, Y. Xie, G. A. Pan, M. Li, E. I. Altman, L. Lu, J. J. Cha

Abstract: Recent renewed interest in layered transition metal dichalcogenides stems from the exotic electronic phases predicted and observed in the single- and few-layer limit. Realizing these electronic phases requires preserving the desired transport properties down to a monolayer, which is challenging. Here, using semimetallic $WTe_2$ that exhibits large magnetoresistance, we show that surface oxidation… ▽ More Recent renewed interest in layered transition metal dichalcogenides stems from the exotic electronic phases predicted and observed in the single- and few-layer limit. Realizing these electronic phases requires preserving the desired transport properties down to a monolayer, which is challenging. Here, using semimetallic $WTe_2$ that exhibits large magnetoresistance, we show that surface oxidation and Fermi level pinning degrade the transport properties of thin $WTe_2$ flakes significantly. With decreasing $WTe_2$ flake thickness, we observe a dramatic suppression of the large magnetoresistance. This is explained by fitting a two-band model to the transport data, which shows that mobility of the electron and hole carriers decreases significantly for thin flakes. The microscopic origin of this mobility decrease is attributed to a ~ 2 nm-thick amorphous surface oxide layer that introduces disorder. The oxide layer also shifts the Fermi level by ~ 300 meV at the $WTe_2$ surface. However, band bending due to this Fermi level shift is not the dominant cause for the suppression of magnetoresistance as the electron and hole carrier densities are balanced down to ~ 13 nm based on the two-band model. Our study highlights the critical need to investigate often unanticipated and sometimes unavoidable extrinsic surface effects on the transport properties of layered dichalcogenides and other 2D materials. △ Less

Submitted 18 June, 2016; originally announced June 2016.

Comments: 4 Figures

Structural Phase Transition and Carrier Density Tuning in SnSexTe1-x Nanoplates for Topological Crystalline Insulators

Authors: Jie Shen, John M. Woods, Y. Xie, M. D. Morales-Acosta, Judy J. Cha

Abstract: For topological insulators and topological crystalline insulators (TCIs), their exotic surface states are promising for fundamental condensed matter physics research as well as future electronics such as low-dissipation electronics and spintronics. However, the high bulk carrier density that often dominates the transport property is the major materials challenge, critically hindering our ability t… ▽ More For topological insulators and topological crystalline insulators (TCIs), their exotic surface states are promising for fundamental condensed matter physics research as well as future electronics such as low-dissipation electronics and spintronics. However, the high bulk carrier density that often dominates the transport property is the major materials challenge, critically hindering our ability to study and manipulate the surface states. In this manuscript, we demonstrate an alloying strategy, SnSexTe1-x, to effectively reduce the bulk carrier density. As long as SnSexTe1-x remains in the cubic crystal structure, it is predicted to be a TCI. We show systematic decrease of the bulk carrier density with the increasing Se concentration, demonstrating that the alloying principle works. In addition, we map out the phase diagram of the cubic to the orthorhombic structural transition as a function of the Se concentration. This was made possible by studying alloy nanoplates which remain single-crystalline and is either in the cubic or the orthorhombic phase, in contrast to bulk alloys that would exhibit polycrystalline grains. Lastly, we investigate systematically the ferroelectric transition associated with the structural transition from the cubic to the rhombohedral phase for SnSexTe1-x. This is the first ferroelectric transition study of the alloy system SnSexTe1-x. △ Less

Submitted 7 March, 2016; originally announced March 2016.

Comments: 25 pages, 4 figures