Showing 1–25 of 25 results for author: Woods, C R

Van der Waals interaction affects wrinkle formation in two-dimensional materials

Authors: Pablo Ares, Yi Bo Wang, Colin R. Woods, James Dougherty, Laura Fumagalli, Francisco Guinea, Benny Davidovitch, Kostya S. Novoselov

Abstract: Nonlinear mechanics of solids is an exciting field that encompasses both beautiful mathematics, such as the emergence of instabilities and the formation of complex patterns, as well as multiple applications. Two-dimensional crystals and van der Waals (vdW) heterostructures allow revisiting this field on the atomic level, allowing much finer control over the parameters and offering atomistic interp… ▽ More Nonlinear mechanics of solids is an exciting field that encompasses both beautiful mathematics, such as the emergence of instabilities and the formation of complex patterns, as well as multiple applications. Two-dimensional crystals and van der Waals (vdW) heterostructures allow revisiting this field on the atomic level, allowing much finer control over the parameters and offering atomistic interpretation of experimental observations. In this work, we consider the formation of instabilities consisting of radially-oriented wrinkles around mono- and few-layer "bubbles" in two-dimensional vdW heterostructures. Interestingly, the shape and wavelength of the wrinkles depend not only on the thickness of the two-dimensional crystal forming the bubble, but also on the atomistic structure of the interface between the bubble and the substrate, which can be controlled by their relative orientation. We argue that the periodic nature of these patterns emanates from an energetic balance between the resistance of the top membrane to bending, which favors large wavelength of wrinkles, and the membrane-substrate vdW attraction, which favors small wrinkle amplitude. Employing the classical "Winkler foundation" model of elasticity theory, we show that the number of radial wrinkles conveys a valuable relationship between the bending rigidity of the top membrane and the strength of the vdW interaction. Armed with this relationship, we use our data to demonstrate a nontrivial dependence of the bending rigidity on the number of layers in the top membrane, which shows two different regimes driven by slippage between the layers, and a high sensitivity of the vdW force to the alignment between the substrate and the membrane. △ Less

Submitted 27 May, 2021; originally announced May 2021.

Journal ref: Proceedings of the National Academy of Sciences 2021, 118, e2025870118

Charge-polarized interfacial superlattices in marginally twisted hexagonal boron nitride

Authors: C. R. Woods, P. Ares, H. Nevison-Andrews, M. J. Holwill, R. Fabregas, F. Guinea, A. K. Geim, K. S. Novoselov, N. R. Walet, L. Fumagalli

Abstract: When two-dimensional crystals are brought into close proximity, their interaction results in strong reconstruction of electronic spectrum and local crystal structure. Such reconstruction strongly depends on the twist angle between the two crystals and has received growing attention due to new interesting electronic and optical properties that arise in graphene and transitional metal dichalcogenide… ▽ More When two-dimensional crystals are brought into close proximity, their interaction results in strong reconstruction of electronic spectrum and local crystal structure. Such reconstruction strongly depends on the twist angle between the two crystals and has received growing attention due to new interesting electronic and optical properties that arise in graphene and transitional metal dichalcogenides. Similarly, novel and potentially useful properties are expected to appear in insulating crystals. Here we study two insulating crystals of hexagonal boron nitride (hBN) stacked at a small twist angle. Using electrostatic force microscopy, we observe ferroelectric-like domains arranged in triangular superlattices with a large surface potential that is independent on the size and orientation of the domains as well as the thickness of the twisted hBN crystals. The observation is attributed to interfacial elastic deformations that result in domains with a large density of out-of-plane polarized dipoles formed by pairs of boron and nitrogen atoms belonging to the opposite interfacial surfaces. This effectively creates a bilayer-thick ferroelectric with oppositely polarized (BN and NB) dipoles in neighbouring domains, in agreement with our modelling. The demonstrated electrostatic domains and their superlattices offer many new possibilities in designing novel van der Waals heterostructures. △ Less

Submitted 14 October, 2020; originally announced October 2020.

Holographic reconstruction of the interlayer distance of bilayer two-dimensional crystal samples from their convergent beam electron diffraction patterns

Authors: Tatiana Latychevskaia, Yichao Zou, Colin Robert Woods, Yi Bo Wang, Matthew Holwill, Eric Prestat, Sarah J. Haigh, Kostya S. Novoselov

Abstract: The convergent beam electron diffraction (CBED) patterns of twisted bilayer samples exhibit interference patterns in their CBED spots. Such interference patterns can be treated as off-axis holograms and the phase of the scattered waves, meaning the interlayer distance can be reconstructed. A detailed protocol of the reconstruction procedure is provided in this study. In addition, we derive an exac… ▽ More The convergent beam electron diffraction (CBED) patterns of twisted bilayer samples exhibit interference patterns in their CBED spots. Such interference patterns can be treated as off-axis holograms and the phase of the scattered waves, meaning the interlayer distance can be reconstructed. A detailed protocol of the reconstruction procedure is provided in this study. In addition, we derive an exact formula for reconstructing the interlayer distance from the recovered phase distribution, which takes into account the different chemical compositions of the individual monolayers. It is shown that one interference fringe in a CBED spot is sufficient to reconstruct the distance between the layers, which can be practical for imaging samples with a relatively small twist angle or when probing small sample regions. The quality of the reconstructed interlayer distance is studied as a function of the twist angle. At smaller twist angles, the reconstructed interlayer distance distribution is more precise and artefact free. At larger twist angles, artefacts due to the moiré structure appear in the reconstruction. A method for the reconstruction of the average interlayer distance is presented. As for resolution, the interlayer distance can be reconstructed by the holographic approach at an accuracy of 0.5 A, which is a few hundred times better than the intrinsic z-resolution of diffraction limited resolution, as expressed through the spread of the measured k-values. Moreover, we show that holographic CBED imaging can detect variations as small as 0.1 A in the interlayer distance, though the quantitative reconstruction of such variations suffers from large errors. △ Less

Submitted 9 August, 2020; originally announced August 2020.

Convergent beam electron diffraction of multilayer van der Waals structures

Authors: Tatiana Latychevskaia, Colin Robert Woods, Yi Bo Wang, Matthew Holwill, Eric Prestat, Sarah J. Haigh, Kostya S. Novoselov

Abstract: Convergent beam electron diffraction is routinely applied for studying deformation and local strain in thick crystals by matching the crystal structure to the observed intensity distributions. Recently, it has been demonstrated that CBED can be applied for imaging two-dimensional (2D) crystals where a direct reconstruction is possible and three-dimensional crystal deformations at a nanometre resol… ▽ More Convergent beam electron diffraction is routinely applied for studying deformation and local strain in thick crystals by matching the crystal structure to the observed intensity distributions. Recently, it has been demonstrated that CBED can be applied for imaging two-dimensional (2D) crystals where a direct reconstruction is possible and three-dimensional crystal deformations at a nanometre resolution can be retrieved. Here, we demonstrate that second-order effects allow for further information to be obtained regarding stacking arrangements between the crystals. Such effects are especially pronounced in samples consisting of multiple layers of 2D crystals. We show, using simulations and experiments, that twisted multilayer samples exhibit extra modulations of interference fringes in CBED patterns, i. e., a CBED moiré. A simple and robust method for the evaluation of the composition and the number of layers from a single-shot CBED pattern is demonstrated. △ Less

Submitted 28 March, 2020; originally announced March 2020.

Journal ref: Ultramicroscopy 212, 112976 (2020)

Nonlinear optical study of commensurability effects in graphene-hBN heterostructures

Authors: E. A. Stepanov, S. V. Semin, C. R. Woods, M. Vandelli, A. V. Kimel, K. S. Novoselov, M. I. Katsnelson

Abstract: Second-order nonlinear optical response allows to detect different properties of the system associated with the inversion symmetry breaking. Here, we use a second harmonic generation effect to investigate the alignment of a graphene/hexagonal Boron Nitride heterostructure. To achieve that, we activate a commensurate-incommensurate phase transition by a thermal annealing of the sample. We find that… ▽ More Second-order nonlinear optical response allows to detect different properties of the system associated with the inversion symmetry breaking. Here, we use a second harmonic generation effect to investigate the alignment of a graphene/hexagonal Boron Nitride heterostructure. To achieve that, we activate a commensurate-incommensurate phase transition by a thermal annealing of the sample. We find that this structural change in the system can be directly observed through a strong modification of a nonlinear optical signal. This result reveals the potential of a second harmonic generation technique for probing structural properties of layered systems. △ Less

Submitted 19 March, 2020; originally announced March 2020.

Journal ref: ACS Applied Materials & Interfaces 12 (24), 27758-27764 (2020)

Composite super-moiré lattices in double aligned graphene heterostructures

Authors: Zihao Wang, Yi Bo Wang, J. Yin, E. Tóvári, Y. Yang, L. Lin, M. Holwill, J. Birkbeck, D. J. Perello, Shuigang Xu, J. Zultak, R. V. Gorbachev, A. V. Kretinin, T. Taniguchi, K. Watanabe, S. V. Morozov, M. Anđelković, S. P. Milovanović, L. Covaci, F. M. Peeters, A. Mishchenko, A. K. Geim, K. S. Novoselov, Vladimir I. Fal'ko, Angelika Knothe , et al. (1 additional authors not shown)

Abstract: When two-dimensional atomic crystals are brought into close proximity to form a van der Waals heterostructure, neighbouring crystals can start influencing each others electronic properties. Of particular interest is the situation when the periodicity of the two crystals closely match and a moiré pattern forms, which results in specific electron scattering, reconstruction of electronic and excitoni… ▽ More When two-dimensional atomic crystals are brought into close proximity to form a van der Waals heterostructure, neighbouring crystals can start influencing each others electronic properties. Of particular interest is the situation when the periodicity of the two crystals closely match and a moiré pattern forms, which results in specific electron scattering, reconstruction of electronic and excitonic spectra, crystal reconstruction, and many other effects. Thus, formation of moiré patterns is a viable tool of controlling the electronic properties of 2D materials. At the same time, the difference in the interatomic distances for the two crystals combined, determines the range in which the electronic spectrum is reconstructed, and thus is a barrier to the low energy regime. Here we present a way which allows spectrum reconstruction at all energies. By using graphene which is aligned simultaneously to two hexagonal boron nitride layers, one can make electrons scatter in the differential moiré pattern, which can have arbitrarily small wavevector and, thus results in spectrum reconstruction at arbitrarily low energies. We demonstrate that the strength of such a potential relies crucially on the atomic reconstruction of graphene within the differential moiré super-cell. Such structures offer further opportunity in tuning the electronic spectra of two-dimensional materials. △ Less

Submitted 27 December, 2019; originally announced December 2019.

Comments: 35 pages, 15 figures

Journal ref: Science Advances 20 Dec 2019: Vol. 5, no. 12, eaay8897

Piezoelectricity in monolayer hexagonal boron nitride

Authors: P. Ares, T. Cea, M. Holwill, Y. B. Wang, R. Roldan, F. Guinea, D. V. Andreeva, L. Fumagalli, K. S. Novoselov, C. R. Woods

Abstract: Two-dimensional (2D) hexagonal boron nitride (hBN) is a wide-bandgap van der Waals crystal with a unique combination of properties, including exceptional strength, large oxidation resistance at high temperatures and optical functionalities. Furthermore, in recent years hBN crystals have become the material of choice for encapsulating other 2D crystals in a variety of technological applications, fr… ▽ More Two-dimensional (2D) hexagonal boron nitride (hBN) is a wide-bandgap van der Waals crystal with a unique combination of properties, including exceptional strength, large oxidation resistance at high temperatures and optical functionalities. Furthermore, in recent years hBN crystals have become the material of choice for encapsulating other 2D crystals in a variety of technological applications, from optoelectronic and tunnelling devices to composites. Monolayer hBN, which has no center of symmetry, has been predicted to exhibit piezoelectric properties, yet experimental evidence is lacking. Here, by using electrostatic force microscopy, we observed this effect as a strain-induced change in the local electric field around bubbles and creases, in agreement with theoretical calculations. No piezoelectricity was found in bilayer and bulk hBN, where the centre of symmetry is restored. These results add piezoelectricity to the known properties of monolayer hBN, which makes it a desirable candidate for novel electromechanical and stretchable optoelectronic devices, and pave a way to control the local electric field and carrier concentration in van der Waals heterostructures via strain. The experimental approach used here also shows a way to investigate the piezoelectric properties of other materials on the nanoscale by using electrostatic scanning probe techniques. △ Less

Submitted 20 November, 2019; originally announced November 2019.

Stacking Order in Graphite Films Controlled by Van der Waals Technology

Authors: Ya** Yang, Yi-Chao Zou, Colin R. Woods, Yanmeng Shi, Jun Yin, Shuigang Xu, Servet Ozdemir, Takashi Taniguchi, Kenji Watanabe, Andre K. Geim, Kostya S. Novoselov, Sarah J. Haigh, Artem Mishchenko

Abstract: In graphite crystals, layers of graphene reside in three equivalent, but distinct, stacking positions typically referred to as A, B, and C projections. The order in which the layers are stacked defines the electronic structure of the crystal, providing an exciting degree of freedom which can be exploited for designing graphitic materials with unusual properties including predicted high-temperature… ▽ More In graphite crystals, layers of graphene reside in three equivalent, but distinct, stacking positions typically referred to as A, B, and C projections. The order in which the layers are stacked defines the electronic structure of the crystal, providing an exciting degree of freedom which can be exploited for designing graphitic materials with unusual properties including predicted high-temperature superconductivity and ferromagnetism. However, the lack of control of the stacking sequence limits most research to the stable ABA form of graphite. Here we demonstrate a strategy to control the stacking order using van der Waals technology. To this end, we first visualise the distribution of stacking domains in graphite films and then perform directional encapsulation of ABC-rich graphite crystallites with hexagonal boron nitride (hBN). We found that hBN-encapsulation which is introduced parallel to the graphite zigzag edges preserves ABC stacking, while encapsulation along the armchair edges transforms the stacking to ABA. The technique presented here should facilitate new research on the important properties of ABC graphite. △ Less

Submitted 1 November, 2019; originally announced November 2019.

Convergent and divergent beam electron holography and reconstruction of adsorbates on free-standing two-dimensional crystals

Authors: Tatiana Latychevskaia, Colin Robert Woods, Yi Bo Wang, Matthew Holwill, Eric Prestat, Sarah J. Haigh, Kostya S. Novoselov

Abstract: Van der Waals heterostructures have been lately intensively studied because they offer a large variety of properties that can be controlled by selecting 2D materials and their sequence in the stack. The exact arrangement of the layers as well as the exact arrangement of the atoms within the layers, both are important for the properties of the resulting device. Recently it has been demonstrated tha… ▽ More Van der Waals heterostructures have been lately intensively studied because they offer a large variety of properties that can be controlled by selecting 2D materials and their sequence in the stack. The exact arrangement of the layers as well as the exact arrangement of the atoms within the layers, both are important for the properties of the resulting device. Recently it has been demonstrated that convergent beam electron diffraction (CBED) allows quantitative three-dimensional map** of atomic positions in three-dimensional materials from a single CBED pattern. In this study we investigate CBED in more detail by simulating and performing various CBED regimes, with convergent and divergent wavefronts, on a somewhat simplified system: a 2D monolayer crystal. In CBED, each CBED spot is in fact an in-line hologram of the sample, where in-line holography is known to exhibit high intensity contrast in detection of weak phase objects that are not detectable in conventional in-focus imaging mode. Adsorbates exhibit strong intensity contrast in zero and higher order CBED spots, whereas lattice deformation such as strain or rippling cause noticeable intensity contrast only in the first and higher order CBED spots. The individual CBED spots can be reconstructed as typical in-line holograms, and the resolution of 2.13 A can be in principle achieved in the reconstructions. We provide simulated and experimental examples of CBED of a 2D monolayer crystal. The simulations show that individual CBED spots can be treated as in-line holograms and sample distributions such as adsorbates, can be reconstructed. Individual atoms can be reconstructed from a single CBED pattern provided the later exhibits high-order CBED spots. Examples of reconstructions obtained from experimental CBED patterns, at a resolution of 2.7 A, are shown. △ Less

Submitted 24 October, 2018; originally announced October 2018.

Journal ref: Frontiers of Physics 14(1), 13606 (2019)

Convergent beam electron holography for analysis of van der Waals heterostructures

Authors: Tatiana Latychevskaia, Colin Robert Woods, Yi Bo Wang, Matthew Holwill, Eric Prestat, Sarah J. Haigh, Kostya S. Novoselov

Abstract: Van der Waals heterostructures, which explore the synergetic properties of two-dimensional (2D) materials when assembled into three-dimensional stacks, have already brought to life a number of exciting new phenomena and novel electronic devices. Still, the interaction between the layers in such assembly, possible surface reconstruction, intrinsic and extrinsic defects are very difficult to charact… ▽ More Van der Waals heterostructures, which explore the synergetic properties of two-dimensional (2D) materials when assembled into three-dimensional stacks, have already brought to life a number of exciting new phenomena and novel electronic devices. Still, the interaction between the layers in such assembly, possible surface reconstruction, intrinsic and extrinsic defects are very difficult to characterise by any method, because of the single-atomic nature of the crystals involved. Here we present a convergent beam electron holographic technique which allows imaging of the stacking order in such heterostructures. Based on the interference of electron waves scattered on different crystals in the stack, this approach allows one to reconstruct the relative rotation, stretching, out-of-plane corrugation of the layers with atomic precision. Being holographic in nature, our approach allows extraction of quantitative information about the three-dimensional structure of the typical defects from a single image covering thousands of square nanometres. Furthermore, qualitative information about the defects in the stack can be extracted from the convergent diffraction patterns even without reconstruction - simply by comparing the patterns in different diffraction spots. We expect that convergent beam electron holography will be widely used to study the properties of van der Waals heterostructures. △ Less

Submitted 5 July, 2018; originally announced July 2018.

Journal ref: Proceedings of the National Academy of Sciences, Volume 115, Issue 29, pages 7473-7478, 2018

Large tunable valley splitting in edge-free graphene quantum dots on boron nitride

Authors: Nils M. Freitag, Tobias Reisch, Larisa A. Chizhova, Peter Nemes-Incze, Christian Holl, Colin R. Woods, Roman V. Gorbachev, Yang Cao, Andre K. Geim, Kostya S. Novoselov, Joachim Burgdörfer, Florian Libisch, Markus Morgenstern

Abstract: Coherent manipulation of binary degrees of freedom is at the heart of modern quantum technologies. Graphene offers two binary degrees: the electron spin and the valley. Efficient spin control has been demonstrated in many solid state systems, while exploitation of the valley has only recently been started, yet without control on the single electron level. Here, we show that van-der Waals stacking… ▽ More Coherent manipulation of binary degrees of freedom is at the heart of modern quantum technologies. Graphene offers two binary degrees: the electron spin and the valley. Efficient spin control has been demonstrated in many solid state systems, while exploitation of the valley has only recently been started, yet without control on the single electron level. Here, we show that van-der Waals stacking of graphene onto hexagonal boron nitride offers a natural platform for valley control. We use a graphene quantum dot induced by the tip of a scanning tunneling microscope and demonstrate valley splitting that is tunable from -5 to +10 meV (including valley inversion) by sub-10-nm displacements of the quantum dot position. This boosts the range of controlled valley splitting by about one order of magnitude. The tunable inversion of spin and valley states should enable coherent superposition of these degrees of freedom as a first step towards graphene-based qubits. △ Less

Submitted 20 March, 2018; v1 submitted 30 August, 2017; originally announced August 2017.

Journal ref: Nature Nanotechnology (2018)

Phase segregation facilitates exfoliation of franckeite crystals to a single unit cell thickness

Authors: Matěj Velický, Peter S. Toth, Alexander M. Rakowski, Aidan P. Rooney, Aleksey Kozikov, Artem Mishchenko, Colin R. Woods, Thanasis Georgiou, Sarah J. Haigh, Kostya S. Novoselov, Robert A. W. Dryfe

Abstract: Weak interlayer van der Waals interactions in bulk crystals facilitate their mechanical exfoliation to monolayer and few-layer two-dimensional (2D) materials, which exhibit striking physical phenomena absent in their bulk form. Here we study a 2D form of a mineral franckeite and show that phase segregation into discrete layers at the sub-nanometre scale facilitates its layered structure and basal… ▽ More Weak interlayer van der Waals interactions in bulk crystals facilitate their mechanical exfoliation to monolayer and few-layer two-dimensional (2D) materials, which exhibit striking physical phenomena absent in their bulk form. Here we study a 2D form of a mineral franckeite and show that phase segregation into discrete layers at the sub-nanometre scale facilitates its layered structure and basal cleavage. This behaviour is likely to be common in a wider family of complex crystals and could be exploited for a single-step synthesis of van der Waals heterostructures, as an alternative to stacking of 2D materials. Mechanical exfoliation allowed us to produce crystals down to a single unit cell thickness and rationalise its basal cleavage by atomic-resolution scanning transmission electron microscopy (STEM). We demonstrate p-type electrical conductivity and remarkable electrochemical properties in exfoliated crystals, which shows promise for energy storage applications. △ Less

Submitted 8 December, 2016; originally announced December 2016.

Comments: Main text: 19 pages, 5 figures; Supplementary Information: 19 pages, 10 figures

Journal ref: Nature Communications 8 (2017) 14410

Stacking transition in bilayer graphene caused by thermally activated rotation

Authors: Mengjian Zhu, Davit Ghazaryan, Seok-Kyun Son, Colin R. Woods, Abhishek Misra, Lin He, Takashi Taniguchi, Kenji Watanabe, Kostya S. Novoselov, Yang Cao, Artem Mishchenko

Abstract: Crystallographic alignment between two-dimensional crystals in van der Waals heterostructures brought a number of profound physical phenomena, including observation of Hofstadter butterfly and topological currents, and promising novel applications, such as resonant tunnelling transistors. Here, by probing the electronic density of states in graphene using graphene-hexagonal boron nitride tunnellin… ▽ More Crystallographic alignment between two-dimensional crystals in van der Waals heterostructures brought a number of profound physical phenomena, including observation of Hofstadter butterfly and topological currents, and promising novel applications, such as resonant tunnelling transistors. Here, by probing the electronic density of states in graphene using graphene-hexagonal boron nitride tunnelling transistors, we demonstrate a structural transition of bilayer graphene from incommensurate twisted stacking state into a commensurate AB stacking due to a macroscopic graphene self-rotation. This structural transition is accompanied by a topological transition in the reciprocal space and by pseudospin texturing. The stacking transition is driven by van der Waals interaction energy of the two graphene layers and is thermally activated by unpinning the microscopic chemical adsorbents which are then removed by the self-cleaning of graphene. △ Less

Submitted 7 December, 2016; originally announced December 2016.

Comments: 13 pages, 6 figures

Journal ref: 2D Mater. 4 (2017) 011013

Tuning the pseudospin polarization of graphene by a pseudo-magnetic field

Authors: Alexander Georgi, Peter Nemes-Incze, Ramon Carrillo-Bastos, Daiara Faria, Silvia Viola Kusminskiy, Dawei Zhai, Martin Schneider, Dinesh Subramaniam, Torge Mashoff, Nils M. Freitag, Marcus Liebmann, Marco Pratzer, Ludger Wirtz, Colin R. Woods, Roman V. Gorbachev, Yang Cao, Kostya S. Novoselov, Nancy Sandler, Markus Morgenstern

Abstract: One of the intriguing characteristics of honeycomb lattices is the appearance of a pseudo-magnetic field as a result of mechanical deformation. In the case of graphene, the Landau quantization resulting from this pseudo-magnetic field has been measured using scanning tunneling microscopy. Here we show that a signature of the pseudo-magnetic field is a local sublattice symmetry breaking observable… ▽ More One of the intriguing characteristics of honeycomb lattices is the appearance of a pseudo-magnetic field as a result of mechanical deformation. In the case of graphene, the Landau quantization resulting from this pseudo-magnetic field has been measured using scanning tunneling microscopy. Here we show that a signature of the pseudo-magnetic field is a local sublattice symmetry breaking observable as a redistribution of the local density of states. This can be interpreted as a polarization of graphene's pseudospin due to a strain induced pseudo-magnetic field, in analogy to the alignment of a real spin in a magnetic field. We reveal this sublattice symmetry breaking by tunably straining graphene using the tip of a scanning tunneling microscope. The tip locally lifts the graphene membrane from a SiO$_2$ support, as visible by an increased slope of the $I(z)$ curves. The amount of lifting is consistent with molecular dynamics calculations, which reveal a deformed graphene area under the tip in the shape of a Gaussian. The pseudo-magnetic field induced by the deformation becomes visible as a sublattice symmetry breaking which scales with the lifting height of the strained deformation and therefore with the pseudo-magnetic field strength. Its magnitude is quantitatively reproduced by analytic and tight-binding models, revealing fields of 1000 T. These results might be the starting point for an effective THz valley filter, as a basic element of valleytronics. △ Less

Submitted 6 March, 2017; v1 submitted 18 November, 2016; originally announced November 2016.

Comments: Revised manuscript: streamlined the abstract and introduction, added methods to supplement, Nano Letters, 2017

Electrostatically confined monolayer graphene quantum dots with orbital and valley splittings

Authors: Nils M. Freitag, Larisa A. Chizhova, Peter Nemes-Incze, Colin R. Woods, Roman V. Gorbachev, Yang Cao, Andre K. Geim, Kostya S. Novoselov, Joachim Burgdörfer, Florian Libisch, Markus Morgenstern

Abstract: The electrostatic confinement of massless charge carriers is hampered by Klein tunneling. Circumventing this problem in graphene mainly relies on carving out nanostructures or applying electric displacement fields to open a band gap in bilayer graphene. So far, these approaches suffer from edge disorder or insufficiently controlled localization of electrons. Here we realize an alternative strategy… ▽ More The electrostatic confinement of massless charge carriers is hampered by Klein tunneling. Circumventing this problem in graphene mainly relies on carving out nanostructures or applying electric displacement fields to open a band gap in bilayer graphene. So far, these approaches suffer from edge disorder or insufficiently controlled localization of electrons. Here we realize an alternative strategy in monolayer graphene, by combining a homogeneous magnetic field and electrostatic confinement. Using the tip of a scanning tunneling microscope, we induce a confining potential in the Landau gaps of bulk graphene without the need for physical edges. Gating the localized states towards the Fermi energy leads to regular charging sequences with more than 40 Coulomb peaks exhibiting typical addition energies of 7-20 meV. Orbital splittings of 4-10 meV and a valley splitting of about 3 meV for the first orbital state can be deduced. These experimental observations are quantitatively reproduced by tight binding calculations, which include the interactions of the graphene with the aligned hexagonal boron nitride substrate. The demonstrated confinement approach appears suitable to create quantum dots with well-defined wave function properties beyond the reach of traditional techniques. △ Less

Submitted 9 August, 2016; originally announced August 2016.

Macroscopic self-reorientation of interacting two-dimensional crystals

Authors: C. R. Woods, F. Withers, M. J. Zhu, Y. Cao, G. Yu, A. Kozikov, M. Ben Shalom, S. V. Morozov, M. M. van Wijk, A. Fasolino, M. I. Katsnelson, K. Watanabe, T. Taniguchi, A. K. Geim, A. Mishchenko, K. S. Novoselov

Abstract: Microelectromechanical systems, which can be moved or rotated with nanometre precision, already find applications in such fields like radio-frequency electronics, micro-attenuators, sensors and many others. Especially interesting are those which allow fine control over the motion on atomic scale due to self-alignment mechanisms and forces acting on the atomic level. Such machines can produce well-… ▽ More Microelectromechanical systems, which can be moved or rotated with nanometre precision, already find applications in such fields like radio-frequency electronics, micro-attenuators, sensors and many others. Especially interesting are those which allow fine control over the motion on atomic scale due to self-alignment mechanisms and forces acting on the atomic level. Such machines can produce well-controlled movements as a reaction to small changes of the external parameters. Here we demonstrate that, for the system of graphene on hexagonal boron nitride, the interplay between the van der Waals and elastic energies results in graphene mechanically self-rotating towards the hexagonal boron nitride crystallographic directions. Such rotation is macroscopic (for graphene flakes of tens of micrometres the tangential movement can be on hundreds of nanometres) and can be used for reproducible manufacturing of aligned van der Waals heterostructures. △ Less

Submitted 15 March, 2016; originally announced March 2016.

Comments: 32 pages, 17 figures, includes supplementary information, published in Nature Communications (2016)

Journal ref: Nature Communications 7, Article number:10800, 2016

WSe2 light-emitting tunneling transistors with enhanced brightness at room temperature

Authors: F. Withers, O. Del Pozo-Zamudio, S. Schwarz, S. Dufferwiel, P. M. Walker, T. Godde, A. P. Rooney, A. Gholinia, C. R. Woods, P. Blake, S. J. Haigh, K. Watanabe, T. Taniguchi, I. L. Aleiner, A. K. Geim, V. I. Falko, A. I. Tartakovskii, K. S. Novoselov

Abstract: Monolayers of molybdenum and tungsten dichalcogenides are direct bandgap semiconductors, which makes them promising for opto-electronic applications. In particular, van der Waals heterostructures consisting of monolayers of MoS2 sandwiched between atomically thin hexagonal boron nitride (hBN) and graphene electrodes allows one to obtain light emitting quantum wells (LEQWs) with low-temperature ext… ▽ More Monolayers of molybdenum and tungsten dichalcogenides are direct bandgap semiconductors, which makes them promising for opto-electronic applications. In particular, van der Waals heterostructures consisting of monolayers of MoS2 sandwiched between atomically thin hexagonal boron nitride (hBN) and graphene electrodes allows one to obtain light emitting quantum wells (LEQWs) with low-temperature external quantum efficiency (EQE) of 1%. However, the EQE of MoS2 and MoSe2-based LEQWs shows behavior common for many other materials: it decreases fast from cryogenic conditions to room temperature, undermining their practical applications. Here we compare MoSe2 and WSe2 LEQWs. We show that the EQE of WSe2 devices grows with temperature, with room temperature EQE reaching 5%, which is 250x more than the previous best performance of MoS2 and MoSe2 quantum wells in ambient conditions. We attribute such a different temperature dependences to the inverted sign of spin-orbit splitting of conduction band states in tungsten and molybdenum dichalcogenides, which makes the lowest-energy exciton in WSe2 dark. △ Less

Submitted 19 November, 2015; originally announced November 2015.

Nonlocal Response and Anamorphosis: the Case of Few-Layer Black Phosphorus

Authors: Artem Mishchenko, Yang Cao, Geliang Yu, Colin R. Woods, Roman V. Gorbachev, Kostya S. Novoselov, Andre K. Geim, Leonid S. Levitov

Abstract: Few-layer black phosphorus was recently rediscovered as a narrow-bandgap atomically thin semiconductor and has already attracted unprecedented attention due to its interesting properties. One feature of this material that sets it apart from other atomically thin crystals is its structural in-plane anisotropy which manifests in strongly anisotropic transport characteristics. However, traditional an… ▽ More Few-layer black phosphorus was recently rediscovered as a narrow-bandgap atomically thin semiconductor and has already attracted unprecedented attention due to its interesting properties. One feature of this material that sets it apart from other atomically thin crystals is its structural in-plane anisotropy which manifests in strongly anisotropic transport characteristics. However, traditional angle-resolved conductance measurements present a challenge for nanoscale systems such as black phosphorus, calling for new approaches in precision studies of transport anisotropy. Here we show that the nonlocal response, being exponentially sensitive to the anisotropy value, provides a powerful tool for determining the anisotropy. This is established by combining measurements of the orientation-dependent nonlocal resistance response with the analysis based on the anamorphosis relations. We demonstrate that the nonlocal response can differ by orders of magnitude for different crystallographic directions even when the anisotropy is at most order-one, allowing us to extract accurate anisotropy values. △ Less

Submitted 22 September, 2015; originally announced September 2015.

Journal ref: Nano Lett. 15 (10), pp 6991-6995 (2015)

Quantum oscillations of the critical current and high-field superconducting proximity in ballistic graphene

Authors: M. Ben Shalom, M. J. Zhu, V. I. Fal'ko, A. Mishchenko, A. V. Kretinin, K. S. Novoselov, C. R. Woods, K. Watanabe, T. Taniguchi, A. K. Geim, J. R. Prance

Abstract: Graphene-based Josephson junctions provide a novel platform for studying the proximity effect due to graphene's unique electronic spectrum and the possibility to tune junction properties by gate voltage. Here we describe graphene junctions with a mean free path of several micrometres, low contact resistance and large supercurrents. Such devices exhibit pronounced Fabry-Pérot oscillations not only… ▽ More Graphene-based Josephson junctions provide a novel platform for studying the proximity effect due to graphene's unique electronic spectrum and the possibility to tune junction properties by gate voltage. Here we describe graphene junctions with a mean free path of several micrometres, low contact resistance and large supercurrents. Such devices exhibit pronounced Fabry-Pérot oscillations not only in the normal-state resistance but also in the critical current. The proximity effect is mostly suppressed in magnetic fields below 10mT, showing the conventional Fraunhofer pattern. Unexpectedly, some proximity survives even in fields higher than 1 T. Superconducting states randomly appear and disappear as a function of field and carrier concentration, and each of them exhibits a supercurrent carrying capacity close to the universal quantum limit. We attribute the high-field Josephson effect to mesoscopic Andreev states that persist near graphene edges. Our work reveals new proximity regimes that can be controlled by quantum confinement and cyclotron motion. △ Less

Submitted 16 December, 2015; v1 submitted 13 April, 2015; originally announced April 2015.

Journal ref: Nature Phys 12, 318-322 (2016)

Twist-controlled resonant tunnelling in graphene-boron nitride-graphene heterostructures

Authors: A. Mishchenko, J. S. Tu, Y. Cao, R. V. Gorbachev, J. R. Wallbank, M. T. Greenaway, V. E. Morozov, S. V. Morozov, M. J. Zhu, S. L. Wong, F. Withers, C. R. Woods, Y. -J. Kim, K. Watanabe, T. Taniguchi, E. E. Vdovin, O. Makarovsky, T. M. Fromhold, V. I. Falko, A. K. Geim, L. Eaves, K. S. Novoselov

Abstract: Recent developments in the technology of van der Waals heterostructures made from two-dimensional atomic crystals have already led to the observation of new physical phenomena, such as the metal-insulator transition and Coulomb drag, and to the realisation of functional devices, such as tunnel diodes, tunnel transistors and photovoltaic sensors. An unprecedented degree of control of the electronic… ▽ More Recent developments in the technology of van der Waals heterostructures made from two-dimensional atomic crystals have already led to the observation of new physical phenomena, such as the metal-insulator transition and Coulomb drag, and to the realisation of functional devices, such as tunnel diodes, tunnel transistors and photovoltaic sensors. An unprecedented degree of control of the electronic properties is available not only by means of the selection of materials in the stack but also through the additional fine-tuning achievable by adjusting the built-in strain and relative orientation of the component layers. Here we demonstrate how careful alignment of the crystallographic orientation of two graphene electrodes, separated by a layer of hexagonal boron nitride (hBN) in a transistor device, can achieve resonant tunnelling with conservation of electron energy, momentum and, potentially, chirality. We show how the resonance peak and negative differential conductance in the device characteristics induces a tuneable radio-frequency oscillatory current which has potential for future high frequency technology. △ Less

Submitted 8 September, 2014; originally announced September 2014.

Comments: For Supplementary Information see http://www.nature.com/nnano/journal/vaop/ncurrent/extref/nnano.2014.187-s1.pdf

Journal ref: Nature Nanotechnology 9, 808-813 (2014)

Heterostructures produced from nanosheet-based inks

Authors: F. Withers, H. Yang, L. Britnell, A. P Rooney, E. Lewis, A. Felten, C. R. Woods, V. Sanchez Romaguera, T. Georgiou, A. Eckmann, Y. J. Kim, S. G. Yeates, S. J. Haigh, A. K. Geim, K. S. Novoselov, C. Casiraghi

Abstract: The new paradigm of heterostructures based on two-dimensional (2D) atomic crystals has already led to the observation of exciting physical phenomena and creation of novel devices. The possibility of combining layers of different 2D materials in one stack allows unprecedented control over the electronic and optical properties of the resulting material. Still, the current method of mechanical transf… ▽ More The new paradigm of heterostructures based on two-dimensional (2D) atomic crystals has already led to the observation of exciting physical phenomena and creation of novel devices. The possibility of combining layers of different 2D materials in one stack allows unprecedented control over the electronic and optical properties of the resulting material. Still, the current method of mechanical transfer of individual 2D crystals, though allowing exceptional control over the quality of such structures and interfaces, is not scalable. Here we show that such heterostructures can be assembled from chemically exfoliated 2D crystals, allowing for low-cost and scalable methods to be used in the device fabrication. △ Less

Submitted 4 September, 2014; originally announced September 2014.

Journal ref: Nano Letters, 14, 3987 (2014)

Sub-diffractional, volume-confined polaritons in a natural hyperbolic material: hexagonal boron nitride

Authors: Joshua D. Caldwell, Andrey Kretinin, Yiguo Chen, Vincenzo Giannini, Michael M. Fogler, Yan Francescato, Chase T. Ellis, Joseph G. Tischler, Colin R. Woods, Alexander J. Giles, Minghui Hong, Kenji Watanabe, Takashi Taniguchi, Stefan A. Maier, Kostya S. Novoselov

Abstract: Strongly anisotropic media where the principal components of the dielectric tensor have opposite signs are called hyperbolic. Such materials length exhibit unique nanophotonic properties enabled by the highly directional propagation of slow-light modes localized at deeply sub-diffractional scales. While artificial hyperbolic metamaterials have been demonstrated, they suffer from high plasmonic los… ▽ More Strongly anisotropic media where the principal components of the dielectric tensor have opposite signs are called hyperbolic. Such materials length exhibit unique nanophotonic properties enabled by the highly directional propagation of slow-light modes localized at deeply sub-diffractional scales. While artificial hyperbolic metamaterials have been demonstrated, they suffer from high plasmonic losses and require complex nanofabrication, which in turn induces the size-dependent limitations on optical confinement. The low-loss, mid-infrared, natural hyperbolic material, hexagonal boron nitride is an attractive alternative. We observe four series of multiple (up to seven) 'hyperbolic polariton' modes in boron nitride nanocones in two spectral bands. The resonant modes obey the predicted aspect ratio dependence and exhibit record-high quality factors (Q up to 283) in the strong confinement regime (lambda/86 in the smallest structures). These observations assert hexagonal boron nitride as a promising platform for studying novel regimes of light-matter interactions and nanophotonic device engineering. △ Less

Submitted 18 August, 2014; v1 submitted 2 April, 2014; originally announced April 2014.

Journal ref: Nature Communications 5, 5221 (2014)

Electronic Properties of Graphene Encapsulated with Different Two-Dimensional Atomic Crystals

Authors: A. V. Kretinin, Y. Cao, J. S. Tu, G. L. Yu, R. Jalil, K. S. Novoselov, S. J. Haigh, A. Gholinia, A. Mishchenko, M. Lozada, T. Georgiou, C. R. Woods, F. Withers, P. Blake, G. Eda, A. Wirsig, C. Hucho, K. Watanabe, T. Taniguchi, A. K. Geim, R. V. Gorbachev

Abstract: Hexagonal boron nitride is the only substrate that has so far allowed graphene devices exhibiting micron-scale ballistic transport. Can other atomically flat crystals be used as substrates for making quality graphene heterostructures? Here we report on our search for alternative substrates. The devices fabricated by encapsulating graphene with molybdenum or tungsten disulphides and hBN are found t… ▽ More Hexagonal boron nitride is the only substrate that has so far allowed graphene devices exhibiting micron-scale ballistic transport. Can other atomically flat crystals be used as substrates for making quality graphene heterostructures? Here we report on our search for alternative substrates. The devices fabricated by encapsulating graphene with molybdenum or tungsten disulphides and hBN are found to exhibit consistently high carrier mobilities of about 60,000 cm$^{2}$V$^{-1}$s$^{-1}$. In contrast, encapsulation with atomically flat layered oxides such as mica, bismuth strontium calcium copper oxide and vanadium pentoxide results in exceptionally low quality of graphene devices with mobilities of ~ 1,000 cm$^{2}$ V$^{-1}$s$^{-1}$. We attribute the difference mainly to self-cleansing that takes place at interfaces between graphene, hBN and transition metal dichalcogenides. Surface contamination assembles into large pockets allowing the rest of the interface to become atomically clean. The cleansing process does not occur for graphene on atomically flat oxide substrates. △ Less

Submitted 24 May, 2014; v1 submitted 20 March, 2014; originally announced March 2014.

Comments: 19 pages, 11 figures, 1 table including Supporting Information

Journal ref: Nano Letters 14, 3270 - 3276 (2014)

Commensurate-incommensurate transition for graphene on hexagonal boron nitride

Authors: C. R. Woods, L. Britnell, A. Eckmann, R. S. Ma, J. C. Lu, H. M. Guo, X. Lin, G. L. Yu, Y. Cao, R. V. Gorbachev, A. V. Kretinin, J. Park, L. A. Ponomarenko, M. I. Katsnelson, Yu. N. Gornostyrev, K. Watanabe, T. Taniguchi, C. Casiraghi, H. J. Gao, A. K. Geim, K. S. Novoselov

Abstract: When a crystal is subjected to a periodic potential, under certain circumstances (such as when the period of the potential is close to the crystal periodicity; the potential is strong enough, etc.) it might adjust itself to follow the periodicity of the potential, resulting in a, so called, commensurate state. Such commensurate-incommensurate transitions are ubiquitous phenomena in many areas of c… ▽ More When a crystal is subjected to a periodic potential, under certain circumstances (such as when the period of the potential is close to the crystal periodicity; the potential is strong enough, etc.) it might adjust itself to follow the periodicity of the potential, resulting in a, so called, commensurate state. Such commensurate-incommensurate transitions are ubiquitous phenomena in many areas of condensed matter physics: from magnetism and dislocations in crystals, to vortices in superconductors, and atomic layers adsorbed on a crystalline surface. Of particular interest might be the properties of topological defects between the two commensurate phases: solitons, domain walls, and dislocation walls. Here we report a commensurate-incommensurate transition for graphene on top of hexagonal boron nitride (hBN). Depending on the rotational angle between the two hexagonal lattices, graphene can either stretch to adjust to a slightly different hBN periodicity (the commensurate state found for small rotational angles) or exhibit little adjustment (the incommensurate state). In the commensurate state, areas with matching lattice constants are separated by domain walls that accumulate the resulting strain. Such soliton-like objects present significant fundamental interest, and their presence might explain recent observations when the electronic, optical, Raman and other properties of graphene-hBN heterostructures have been notably altered. △ Less

Submitted 20 March, 2014; v1 submitted 12 January, 2014; originally announced January 2014.

Journal ref: Nature Physics 10(6), 451 - 456 (2014)

Cloning of Dirac fermions in graphene superlattices

Authors: L. A. Ponomarenko, R. V. Gorbachev, G. L. Yu, D. C. Elias, R. Jalil, A. A. Patel, A. Mishchenko, A. S. Mayorov, C. R. Woods, J. R. Wallbank, M. Mucha-Kruczynski, B. A. Piot, M. Potemski, I. V. Grigorieva, K. S. Novoselov, F. Guinea, V. I. Fal'ko, A. K. Geim

Abstract: Lateral superlattices have attracted major interest as this may allow one to modify spectra of two dimensional electron systems and, ultimately, create materials with tailored electronic properties. Previously, it proved difficult to realize superlattices with sufficiently short periodicity and weak disorder, and most of the observed features could be explained in terms of commensurate cyclotron o… ▽ More Lateral superlattices have attracted major interest as this may allow one to modify spectra of two dimensional electron systems and, ultimately, create materials with tailored electronic properties. Previously, it proved difficult to realize superlattices with sufficiently short periodicity and weak disorder, and most of the observed features could be explained in terms of commensurate cyclotron orbits. Evidence for the formation of superlattice minibands (so called Hofstadter's butterfly) has been limited to the observation of new low-field oscillations and an internal structure within Landau levels. Here we report transport properties of graphene placed on a boron nitride substrate and accurately aligned along its crystallographic directions. The substrate's moire potential leads to profound changes in graphene's electronic spectrum. Second-generation Dirac points appear as pronounced peaks in resistivity accompanied by reversal of the Hall effect. The latter indicates that the sign of the effective mass changes within graphene's conduction and valence bands. Quantizing magnetic fields lead to Zak-type cloning of the third generation of Dirac points that are observed as numerous neutrality points in fields where a unit fraction of the flux quantum pierces the superlattice unit cell. Graphene superlattices open a venue to study the rich physics expected for incommensurable quantum systems and illustrate the possibility to controllably modify electronic spectra of 2D atomic crystals by using their crystallographic alignment within van der Waals heterostuctures. △ Less

Submitted 9 May, 2013; v1 submitted 20 December, 2012; originally announced December 2012.

Comments: Nature 2013

Journal ref: Nature 497, 594-597 (2013)