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Diamond nano-pillar arrays for quantum microscopy of neuronal signals
Authors:
Liam Hanlon,
Vini Gautam,
James D. A. Wood,
Prithvi Reddy,
Michael S. J. Barson,
Marika Niihori,
Alexander R. J. Silalahi,
Ben Corry,
Joerg Wrachtrup,
Matthew J. Sellars,
Vincent R. Daria,
Patrick Maletinsky,
Gregory J. Stuart,
Marcus W. Doherty
Abstract:
Modern neuroscience is currently limited in its capacity to perform long term, wide-field measurements of neuron electromagnetics with nanoscale resolution. Quantum microscopy using the nitrogen vacancy centre (NV) can provide a potential solution to this problem with electric and magnetic field sensing at nano-scale resolution and good biocompatibility. However, the performance of existing NV sen…
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Modern neuroscience is currently limited in its capacity to perform long term, wide-field measurements of neuron electromagnetics with nanoscale resolution. Quantum microscopy using the nitrogen vacancy centre (NV) can provide a potential solution to this problem with electric and magnetic field sensing at nano-scale resolution and good biocompatibility. However, the performance of existing NV sensing technology does not allow for studies of small mammalian neurons yet. In this paper, we propose a solution to this problem by engineering NV quantum sensors in diamond nanopillar arrays. The pillars improve light collection efficiency by guiding excitation/emission light, which improves sensitivity. More importantly, they also improve the size of the signal at the NV by removing screening charges as well as coordinating the neuron growth to the tips of the pillars where the NV is located. Here, we provide a growth study to demonstrate coordinated neuron growth as well as the first simulation of nano-scopic neuron electric and magnetic fields to assess the enhancement provided by the nanopillar geometry.
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Submitted 25 January, 2019;
originally announced January 2019.
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Quantum probe hyperpolarisation of molecular nuclear spins
Authors:
David A. Broadway,
Jean-Philippe Tetienne,
Alastair Stacey,
James D. A. Wood,
David A. Simpson,
Liam T. Hall,
Lloyd C. L. Hollenberg
Abstract:
The hyperpolarisation of nuclear spins within target molecules is a critical and complex challenge in magnetic resonance imaging (MRI) and nuclear magnetic resonance (NMR) spectroscopy. Hyperpolarisation offers enormous gains in signal and spatial resolution which may ultimately lead to the development of molecular MRI and NMR. At present, techniques used to polarise nuclear spins generally requir…
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The hyperpolarisation of nuclear spins within target molecules is a critical and complex challenge in magnetic resonance imaging (MRI) and nuclear magnetic resonance (NMR) spectroscopy. Hyperpolarisation offers enormous gains in signal and spatial resolution which may ultimately lead to the development of molecular MRI and NMR. At present, techniques used to polarise nuclear spins generally require low temperatures and/or high magnetic fields, radio-frequency control fields, or the introduction of catalysts or free-radical mediators. The emergence of room temperature solid-state spin qubits has opened exciting new pathways to circumvent these requirements to achieve direct nuclear spin hyperpolarisation using quantum control. Employing a novel cross-relaxation induced polarisation (CRIP) protocol using a single nitrogen-vacancy (NV) centre in diamond, we demonstrate the first external nuclear spin hyperpolarisation achieved by a quantum probe, in this case of $^1$H molecular spins in poly(methyl methacrylate). In doing so, we show that a single qubit is capable of increasing the thermal polarisation of $\sim 10^6$ nuclear spins by six orders of magnitude, equivalent to an applied magnetic field of $10^5$\,T. The technique can also be tuned to multiple spin species, which we demonstrate using both \C{13} and $^1$H nuclear spin ensembles. Our results are analysed and interpreted via a detailed theoretical treatment, which is also used to describe how the system can be scaled up to a universal quantum hyperpolarisation platform for the production of macroscopic quantities of contrast agents at high polarisation levels for clinical applications. These results represent a new paradigm for nuclear spin hyperpolarisation for molecular imaging and spectroscopy, and beyond into areas such as materials science and quantum information processing.
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Submitted 22 August, 2017; v1 submitted 19 August, 2017;
originally announced August 2017.
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Environmentally mediated coherent control of a spin qubit in diamond
Authors:
Scott E. Lillie,
David A. Broadway,
James D. A. Wood,
David A. Simpson,
Alastair Stacey,
Jean-Philippe Tetienne,
Lloyd C. L. Hollenberg
Abstract:
The coherent control of spin qubits forms the basis of many applications in quantum information processing and nanoscale sensing, imaging and spectroscopy. Such control is conventionally achieved by direct driving of the qubit transition with a resonant global field, typically at microwave frequencies. Here we introduce an approach that relies on the resonant driving of nearby environment spins, w…
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The coherent control of spin qubits forms the basis of many applications in quantum information processing and nanoscale sensing, imaging and spectroscopy. Such control is conventionally achieved by direct driving of the qubit transition with a resonant global field, typically at microwave frequencies. Here we introduce an approach that relies on the resonant driving of nearby environment spins, whose localised magnetic field in turn drives the qubit when the environmental spin Rabi frequency matches the qubit resonance. This concept of environmentally mediated resonance (EMR) is explored experimentally using a qubit based on a single nitrogen-vacancy (NV) centre in diamond, with nearby electronic spins serving as the environmental mediators. We demonstrate EMR driven coherent control of the NV spin-state, including the observation of Rabi oscillations, free induction decay, and spin-echo. This technique also provides a way to probe the nanoscale environment of spin qubits, which we illustrate by acquisition of electron spin resonance spectra of single NV centres in various settings.
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Submitted 19 February, 2017;
originally announced February 2017.
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Microwave-Free Nuclear Magnetic Resonance at Molecular Scales
Authors:
James D. A. Wood,
Jean-Philippe Tetienne,
David A. Broadway,
Liam T. Hall,
David A. Simpson,
Alastair Stacey,
Lloyd C. L. Hollenberg
Abstract:
The implementation of nuclear magnetic resonance (NMR) at the nanoscale is a major challenge, as conventional systems require relatively large ensembles of spins and limit resolution to mesoscopic scales. New approaches based on quantum spin probes, such as the nitrogen-vacancy (NV) centre in diamond, have recently achieved nano-NMR under ambient conditions. However, the measurement protocols requ…
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The implementation of nuclear magnetic resonance (NMR) at the nanoscale is a major challenge, as conventional systems require relatively large ensembles of spins and limit resolution to mesoscopic scales. New approaches based on quantum spin probes, such as the nitrogen-vacancy (NV) centre in diamond, have recently achieved nano-NMR under ambient conditions. However, the measurement protocols require application of complex microwave pulse sequences of high precision and relatively high power, placing limitations on the design and scalability of these techniques. Here we demonstrate a microwave-free method for nanoscale NMR using the NV centre, which is a far less invasive, and vastly simpler measurement protocol. By utilising a carefully tuned magnetic cross-relaxation interaction between a subsurface NV spin and an external, organic environment of proton spins, we demonstrate NMR spectroscopy of $^1$H within a $\approx(10~{\rm nm})^3$ sensing volume. We also theoretically and experimentally show that the sensitivity of our approach matches that of existing microwave control-based techniques using the NV centre. Removing the requirement for coherent manipulation of either the NV or the environmental spin quantum states represents a significant step towards the development of robust, non-invasive nanoscale NMR probes.
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Submitted 6 October, 2016;
originally announced October 2016.
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Spin dynamics of diamond nitrogen-vacancy centres at the ground state level anti-crossing and all-optical low frequency magnetic field sensing
Authors:
David A. Broadway,
James D. A. Wood,
Liam T. Hall,
Alastair Stacey,
Matthew Markham,
David A. Simpson,
Jean-Philippe Tetienne,
Lloyd C. L. Hollenberg
Abstract:
We investigate the photo-induced spin dynamics of single nitrogen-vacancy (NV) centres in diamond near the electronic ground state level anti-crossing (GSLAC), which occurs at an axial magnetic field around 1024 G. Using optically detected magnetic resonance spectroscopy, we first find that the electron spin transition frequency can be tuned down to 100 kHz for the \NV{14} centre, while for the \N…
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We investigate the photo-induced spin dynamics of single nitrogen-vacancy (NV) centres in diamond near the electronic ground state level anti-crossing (GSLAC), which occurs at an axial magnetic field around 1024 G. Using optically detected magnetic resonance spectroscopy, we first find that the electron spin transition frequency can be tuned down to 100 kHz for the \NV{14} centre, while for the \NV{15} centre the transition strength vanishes for frequencies below about 2 MHz owing to the GSLAC level structure. Using optical pulses to prepare and readout the spin state, we observe coherent spin oscillations at 1024 G for the \NV{14}, which originate from spin mixing induced by residual transverse magnetic fields. This effect is responsible for limiting the smallest observable transition frequency, which can span two orders of magnitude from 100 kHz to tens of MHz depending on the local magnetic noise. A similar feature is observed for the \NV{15} centre at 1024 G. As an application of these findings, we demonstrate all-optical detection and spectroscopy of externally-generated fluctuating magnetic fields at frequencies from 8 MHz down to 500 kHz, using a \NV{14} centre. Since the Larmor frequency of most nuclear spin species lies within this frequency range near the GSLAC, these results pave the way towards all-optical, nanoscale nuclear magnetic resonance spectroscopy, using longitudinal spin cross-relaxation.
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Submitted 14 July, 2016;
originally announced July 2016.
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Role of Pressure in the Growth of Hexagonal Boron Nitride Thin Films from Ammonia-Borane
Authors:
Justin C. Koepke,
Joshua D. Wood,
Enrique A. Carrion,
Scott W. Schmucker,
Yaofeng Chen,
Jayan Hewaparakrama,
Aniruddh Rangarajan,
Isha Datye,
Rushabh Mehta,
Ximeng Liu,
Noel N. Chang,
Lea Nienhaus,
Richard T. Haasch,
Martin Gruebele,
Gregory S. Girolami,
Eric Pop,
Joseph W. Lyding
Abstract:
We analyze the optical, chemical, and electrical properties of chemical vapor deposition (CVD) grown hexagonal boron nitride (h-BN) using the precursor ammonia-borane ($H_3N-BH_3$) as a function of $Ar/H_2$ background pressure ($P_{TOT}$). Films grown at $P_{TOT}$ less than 2.0 Torr are uniform in thickness, highly crystalline, and consist solely of h-BN. At larger $P_{TOT}$, with constant precurs…
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We analyze the optical, chemical, and electrical properties of chemical vapor deposition (CVD) grown hexagonal boron nitride (h-BN) using the precursor ammonia-borane ($H_3N-BH_3$) as a function of $Ar/H_2$ background pressure ($P_{TOT}$). Films grown at $P_{TOT}$ less than 2.0 Torr are uniform in thickness, highly crystalline, and consist solely of h-BN. At larger $P_{TOT}$, with constant precursor flow, the growth rate increases, but the resulting h-BN is more amorphous, disordered, and $sp^3$ bonded. We attribute these changes in h-BN grown at high pressure to incomplete thermolysis of the $H_3N-BH_3$ precursor from a passivated Cu catalyst. A similar increase in h-BN growth rate and amorphization is observed even at low $P_{TOT}$ if the $H_3N-BH_3$ partial pressure is initially greater than the background pressure $P_{TOT}$ at the beginning of growth. h-BN growth using the $H_3N-BH_3$ precursor reproducibly can give large-area, crystalline h-BN thin films, provided that the total pressure is under 2.0 Torr and the precursor flux is well-controlled.
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Submitted 22 May, 2016;
originally announced May 2016.
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Covalent Functionalization and Passivation of Exfoliated Black Phosphorus via Aryl Diazonium Chemistry
Authors:
Christopher R. Ryder,
Joshua D. Wood,
Spencer A. Wells,
Yang Yang,
Deep Jariwala,
Tobin J. Marks,
George C. Schatz,
Mark C. Hersam
Abstract:
Functionalization of atomically thin nanomaterials enables the tailoring of their chemical, optical, and electronic properties. Exfoliated black phosphorus, a layered two-dimensional semiconductor exhibiting favorable charge carrier mobility, tunable bandgap, and highly anisotropic properties, is chemically reactive and degrades rapidly in ambient conditions. In contrast, here we show that covalen…
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Functionalization of atomically thin nanomaterials enables the tailoring of their chemical, optical, and electronic properties. Exfoliated black phosphorus, a layered two-dimensional semiconductor exhibiting favorable charge carrier mobility, tunable bandgap, and highly anisotropic properties, is chemically reactive and degrades rapidly in ambient conditions. In contrast, here we show that covalent aryl diazonium functionalization suppresses the chemical degradation of exfoliated black phosphorus even following weeks of ambient exposure. This chemical modification scheme spontaneously forms phosphorus-carbon bonds, has a reaction rate sensitive to the aryl diazonium substituent, and alters the electronic properties of exfoliated black phosphorus, ultimately yielding a strong, tunable p-type do** that simultaneously improves field-effect transistor mobility and on/off current ratio. This chemical functionalization pathway controllably modifies the properties of exfoliated black phosphorus, thus improving its prospects for nanoelectronic applications.
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Submitted 3 May, 2016;
originally announced May 2016.
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Stable Aqueous Dispersions of Optically and Electronically Active Phosphorene
Authors:
Joohoon Kang,
Spencer A. Wells,
Joshua D. Wood,
Jae-Hyeok Lee,
Xiaolong Liu,
Christopher R. Ryder,
Jian Zhu,
Jeffrey R. Guest,
Chad A. Husko,
Mark C. Hersam
Abstract:
Understanding and exploiting the remarkable optical and electronic properties of phosphorene require mass production methods that avoid chemical degradation. While solution-based strategies have been developed for scalable exfoliation of black phosphorus, these techniques have thus far employed anhydrous organic solvents in an effort to minimize exposure to known oxidants, but at the cost of limit…
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Understanding and exploiting the remarkable optical and electronic properties of phosphorene require mass production methods that avoid chemical degradation. While solution-based strategies have been developed for scalable exfoliation of black phosphorus, these techniques have thus far employed anhydrous organic solvents in an effort to minimize exposure to known oxidants, but at the cost of limited exfoliation yield and flake size distribution. Here, we present an alternative phosphorene production method based on surfactant-assisted exfoliation and post-processing of black phosphorus in deoxygenated water. From comprehensive microscopic and spectroscopic analysis, this approach is shown to yield phosphorene dispersions that are stable, highly concentrated, and comparable to micromechanically exfoliated phosphorene in structure and chemistry. Due to the high exfoliation efficiency of this process, the resulting phosphorene flakes are thinner than anhydrous organic solvent dispersions, thus allowing the observation of layer-dependent photoluminescence down to the monolayer limit. Furthermore, to demonstrate preservation of electronic properties following solution processing, the aqueous-exfoliated phosphorene flakes are employed in field-effect transistors with high drive currents and current modulation ratios. Overall, this method enables the isolation and mass production of few-layer phosphorene, which will accelerate ongoing efforts to realize a diverse range of phosphorene-based applications.
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Submitted 19 April, 2016;
originally announced April 2016.
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Wide-band, nanoscale magnetic resonance spectroscopy using quantum relaxation of a single spin in diamond
Authors:
James D. A. Wood,
David A. Broadway,
Liam T. Hall,
Alastair Stacey,
David A. Simpson,
Jean-Philippe Tetienne,
Lloyd C. L. Hollenberg
Abstract:
We demonstrate a wide-band all-optical method of nanoscale magnetic resonance (MR) spectroscopy under ambient conditions. Our method relies on cross-relaxation between a probe spin, the electronic spin of a nitrogen-vacancy centre in diamond, and target spins as the two systems are tuned into resonance. By optically monitoring the spin relaxation time ($T_1$) of the probe spin while varying the am…
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We demonstrate a wide-band all-optical method of nanoscale magnetic resonance (MR) spectroscopy under ambient conditions. Our method relies on cross-relaxation between a probe spin, the electronic spin of a nitrogen-vacancy centre in diamond, and target spins as the two systems are tuned into resonance. By optically monitoring the spin relaxation time ($T_1$) of the probe spin while varying the amplitude of an applied static magnetic field, a frequency spectrum of the target spin resonances, a $T_1$-MR spectrum, is obtained. As a proof of concept, we measure $T_1$-MR spectra of a small ensemble of $^{14}$N impurities surrounding the probe spin within the diamond, with each impurity comprising an electron spin 1/2 and a nuclear spin 1. The intrinsically large bandwidth of the technique and probe properties allows us to detect both electron spin transitions -- in the GHz range -- and nuclear spin transitions -- in the MHz range -- of the $^{14}$N spin targets. The measured frequencies are found to be in excellent agreement with theoretical expectations, and allow us to infer the hyperfine, quadrupole and gyromagnetic constants of the target spins. Analysis of the strength of the resonances obtained in the $T_1$-MR spectrum reveals that the electron spin transitions are probed via dipole interactions, while the nuclear spin resonances are dramatically enhanced by hyperfine coupling and an electron-mediated process. Finally, we investigate theoretically the possibility of performing $T_1$-MR spectroscopy on nuclear spins without hyperfine interaction and predict single-proton sensitivity using current technology. This work establishes $T_1$-MR as a simple yet powerful technique for nanoscale MR spectroscopy, with broadband capability and a projected sensitivity down to the single nuclear spin level.
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Submitted 1 April, 2016;
originally announced April 2016.
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Chemically Tailoring Semiconducting Two-Dimensional Transition Metal Dichalcogenides and Black Phosphorus
Authors:
Christopher R. Ryder,
Joshua D. Wood,
Spencer A. Wells,
Mark C. Hersam
Abstract:
Two-dimensional (2D) semiconducting transition metal dichalcogenides (TMDCs) and black phosphorus (BP) have beneficial electronic, optical, and physical properties at the few-layer limit. As atomically thin materials, 2D TMDCs and BP are highly sensitive to their environment and chemical modification, resulting in a strong dependence of their properties on substrate effects, intrinsic defects, and…
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Two-dimensional (2D) semiconducting transition metal dichalcogenides (TMDCs) and black phosphorus (BP) have beneficial electronic, optical, and physical properties at the few-layer limit. As atomically thin materials, 2D TMDCs and BP are highly sensitive to their environment and chemical modification, resulting in a strong dependence of their properties on substrate effects, intrinsic defects, and extrinsic adsorbates. Furthermore, the integration of 2D semiconductors into electronic and optoelectronic devices introduces unique challenges at metal-semiconductor and dielectric-semiconductor interfaces. Here, we review emerging efforts to understand and exploit chemical effects to influence the properties of 2D TMDCs and BP. In some cases, surface chemistry leads to significant degradation, thus necessitating the development of robust passivation schemes. On the other hand, appropriately designed chemical modification can be used to beneficially tailor electronic properties, such as controlling do** levels and charge carrier concentrations. Overall, chemical methods allow substantial tunability of the properties of 2D TMDCs and BP, thereby enabling significant future opportunities to optimize performance for device applications.
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Submitted 28 March, 2016;
originally announced March 2016.
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Anisotropic Thermal Conductivity of Exfoliated Black Phosphorus
Authors:
Hye** Jang,
Joshua D. Wood,
Christopher R. Ryder,
Mark C. Hersam,
David G. Cahill
Abstract:
We ascertain the anisotropic thermal conductivity of alumina passivated black phosphorus (BP), a reactive 2D nanomaterial with strong in-plane anisotropy. We measure the room temperature thermal conductivity by time-domain thermoreflectance for the three crystalline axes of exfoliated BP. The thermal conductivity along the zigzag direction (86 +/- 8 W/(m*K)) is ~2.5 times higher than that of the a…
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We ascertain the anisotropic thermal conductivity of alumina passivated black phosphorus (BP), a reactive 2D nanomaterial with strong in-plane anisotropy. We measure the room temperature thermal conductivity by time-domain thermoreflectance for the three crystalline axes of exfoliated BP. The thermal conductivity along the zigzag direction (86 +/- 8 W/(m*K)) is ~2.5 times higher than that of the armchair direction (34 +/- 4 W/(m*K)).
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Submitted 30 September, 2015;
originally announced October 2015.
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Graphene-Based Platform for Infrared Near-Field Nanospectroscopy of Water and Biological Materials in an Aqueous Environment
Authors:
Omar Khatib,
Joshua D. Wood,
Alexander S. McLeod,
Michael D. Goldflam,
Martin Wagner,
Gregory L. Damhorst,
Justin C. Koepke,
Gregory P. Doidge,
Aniruddh Rangarajan,
Rashid Bashir,
Eric Pop,
Joseph W. Lyding,
Mark H. Thiemens,
Fritz Keilmann,
D. N. Basov
Abstract:
Scattering scanning near-field optical microscopy (s-SNOM) has emerged as a powerful nanoscale spectroscopic tool capable of characterizing individual biomacromolecules and molecular materials. However, applications of scattering-based near-field techniques in the infrared (IR) to native biosystems still await a solution of how to implement the required aqueous environment. In this work, we demons…
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Scattering scanning near-field optical microscopy (s-SNOM) has emerged as a powerful nanoscale spectroscopic tool capable of characterizing individual biomacromolecules and molecular materials. However, applications of scattering-based near-field techniques in the infrared (IR) to native biosystems still await a solution of how to implement the required aqueous environment. In this work, we demonstrate an IR-compatible liquid cell architecture that enables near-field imaging and nanospectroscopy by taking advantage of the unique properties of graphene. Large-area graphene acts as an impermeable monolayer barrier that allows for nano-IR inspection of underlying molecular materials in liquid. Here, we use s-SNOM to investigate the tobacco mosaic virus (TMV) in water underneath graphene. We resolve individual virus particles and register the amide I and II bands of TMV at ca. 1520 and 1660 cm$^{-1}$, respectively, using nanoscale Fourier transform infrared spectroscopy (nano-FTIR). We verify the presence of water in the graphene liquid cell by identifying a spectral feature associated with water absorption at 1610 cm$^{-1}$.
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Submitted 5 September, 2015;
originally announced September 2015.
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Preserving the 7x7 surface reconstruction of clean Si(111) by graphene adsorption
Authors:
Justin C. Koepke,
Joshua D. Wood,
Cedric M. Horvath,
Joseph W. Lyding,
Salvador Barraza-Lopez
Abstract:
We employ room-temperature ultrahigh vacuum scanning tunneling microscopy (UHV STM) and {\em ab-initio} calculations to study graphene flakes that were adsorbed onto the Si(111)$-$7$\times$7 surface. The characteristic 7$\times$7 reconstruction of this semiconductor substrate can be resolved through graphene at all scanning biases, thus indicating that the atomistic configuration of the semiconduc…
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We employ room-temperature ultrahigh vacuum scanning tunneling microscopy (UHV STM) and {\em ab-initio} calculations to study graphene flakes that were adsorbed onto the Si(111)$-$7$\times$7 surface. The characteristic 7$\times$7 reconstruction of this semiconductor substrate can be resolved through graphene at all scanning biases, thus indicating that the atomistic configuration of the semiconducting substrate is not altered upon graphene adsorption. Large-scale {\em ab-initio} calculations confirm these experimental observations and point to a lack of chemical bonding among interfacial graphene and silicon atoms. Our work provides insight into atomic-scale chemistry between graphene and highly-reactive surfaces, directing future passivation and chemical interaction work in graphene-based heterostructures.
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Submitted 9 August, 2015;
originally announced August 2015.
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Solvent Exfoliation of Electronic-Grade, Two-Dimensional Black Phosphorus
Authors:
Joohoon Kang,
Joshua D. Wood,
Spencer A. Wells,
Jae-Hyeok Lee,
Xiaolong Liu,
Kan-Sheng Chen,
Mark C. Hersam
Abstract:
Solution dispersions of two-dimensional (2D) black phosphorus (BP), often referred to as phosphorene, are achieved by solvent exfoliation. These pristine, electronic-grade BP dispersions are produced with anhydrous, organic solvents in a sealed tip ultrasonication system, which circumvents BP degradation that would otherwise occur via solvated oxygen or water. Among conventional solvents, n-methyl…
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Solution dispersions of two-dimensional (2D) black phosphorus (BP), often referred to as phosphorene, are achieved by solvent exfoliation. These pristine, electronic-grade BP dispersions are produced with anhydrous, organic solvents in a sealed tip ultrasonication system, which circumvents BP degradation that would otherwise occur via solvated oxygen or water. Among conventional solvents, n-methyl-pyrrolidone (NMP) is found to provide stable, highly concentrated (~0.4 mg/mL) BP dispersions. Atomic force microscopy, scanning electron microscopy, transmission electron microscopy, Raman spectroscopy, and X-ray photoelectron spectroscopy show that the structure and chemistry of solvent-exfoliated BP nanosheets are comparable to mechanically exfoliated BP flakes. Additionally, residual NMP from the liquid-phase processing suppresses the rate of BP oxidation in ambient conditions. Solvent-exfoliated BP nanosheet field-effect transistors (FETs) exhibit ambipolar behavior with current on/off ratios and mobilities up to ~10000 and ~50 cm^2/(V*s), respectively. Overall, this study shows that stable, highly concentrated, electronic-grade 2D BP dispersions can be realized by scalable solvent exfoliation, thereby presenting opportunities for large-area, high-performance BP device applications.
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Submitted 5 May, 2015;
originally announced May 2015.
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In Situ Thermal Decomposition of Exfoliated Two-Dimensional Black Phosphorus
Authors:
Xiaolong Liu,
Joshua D. Wood,
Kan-Sheng Chen,
EunKyung Cho,
Mark C. Hersam
Abstract:
With a semiconducting band gap and high charge carrier mobility, two-dimensional (2D) black phosphorus (BP), often referred to as phosphorene, holds significant promise for next generation electronics and optoelectronics. However, as a 2D material, it possesses a higher surface area to volume ratio than bulk BP, suggesting that its chemical and thermal stability will be modified. Herein, an atomic…
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With a semiconducting band gap and high charge carrier mobility, two-dimensional (2D) black phosphorus (BP), often referred to as phosphorene, holds significant promise for next generation electronics and optoelectronics. However, as a 2D material, it possesses a higher surface area to volume ratio than bulk BP, suggesting that its chemical and thermal stability will be modified. Herein, an atomic-scale microscopic and spectroscopic study is performed to characterize the thermal degradation of mechanically exfoliated 2D BP. From in situ scanning/transmission electron microscopy, decomposition of 2D BP is observed to occur at ~400 °C in vacuum, in contrast to the 550 °C bulk BP sublimation temperature. This decomposition initiates via eye-shaped cracks along the [001] direction and then continues until only a thin, amorphous red phosphorous like skeleton remains. In situ electron energy loss spectroscopy, energy-dispersive X-ray spectroscopy, and energy-loss near-edge structure changes provide quantitative insight into this chemical transformation process.
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Submitted 9 February, 2015;
originally announced February 2015.
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Annealing Free, Clean Graphene Transfer using Alternative Polymer Scaffolds
Authors:
Joshua D. Wood,
Gregory P. Doidge,
Enrique A. Carrion,
Justin C. Koepke,
Joshua A. Kaitz,
Isha Datye,
Ashkan Behnam,
Jayan Hewaparakrama,
Basil Aruin,
Yaofeng Chen,
Hefei Dong,
Richard T. Haasch,
Joseph W. Lyding,
Eric Pop
Abstract:
We examine the transfer of graphene grown by chemical vapor deposition (CVD) with polymer scaffolds of poly(methyl methacrylate) (PMMA), poly(lactic acid) (PLA), poly(phthalaldehyde) (PPA), and poly(bisphenol A carbonate) (PC). We find that optimally reactive PC scaffolds provide the cleanest graphene transfers without any annealing, after extensive comparison with optical microscopy, X-ray photoe…
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We examine the transfer of graphene grown by chemical vapor deposition (CVD) with polymer scaffolds of poly(methyl methacrylate) (PMMA), poly(lactic acid) (PLA), poly(phthalaldehyde) (PPA), and poly(bisphenol A carbonate) (PC). We find that optimally reactive PC scaffolds provide the cleanest graphene transfers without any annealing, after extensive comparison with optical microscopy, X-ray photoelectron spectroscopy, atomic force microscopy, and scanning tunneling microscopy. Comparatively, films transferred with PLA, PPA, and PMMA have a two-fold higher roughness and a five-fold higher chemical do**. Using PC scaffolds, we demonstrate the clean transfer of CVD multilayer graphene, fluorinated graphene, and hexagonal boron nitride. Our annealing free, PC transfers enable the use of atomically-clean nanomaterials in biomolecule encapsulation and flexible electronic applications.
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Submitted 12 January, 2015;
originally announced January 2015.
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Effective Passivation of Exfoliated Black Phosphorus Transistors against Ambient Degradation
Authors:
Joshua D. Wood,
Spencer A. Wells,
Deep Jariwala,
Kan-Sheng Chen,
EunKyung Cho,
Vinod K. Sangwan,
Xiaolong Liu,
Lincoln J. Lauhon,
Tobin J. Marks,
Mark C. Hersam
Abstract:
Unencapsulated, exfoliated black phosphorus (BP) flakes are found to chemically degrade upon exposure to ambient conditions. Atomic force microscopy, electrostatic force microscopy, transmission electron microscopy, X-ray photoelectron spectroscopy, and Fourier transform infrared spectroscopy are employed to characterize the structure and chemistry of the degradation process, suggesting that O2 sa…
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Unencapsulated, exfoliated black phosphorus (BP) flakes are found to chemically degrade upon exposure to ambient conditions. Atomic force microscopy, electrostatic force microscopy, transmission electron microscopy, X-ray photoelectron spectroscopy, and Fourier transform infrared spectroscopy are employed to characterize the structure and chemistry of the degradation process, suggesting that O2 saturated H2O irreversibly reacts with BP to form oxidized phosphorus species. This interpretation is further supported by the observation that BP degradation occurs more rapidly on hydrophobic octadecyltrichlorosilane self-assembled monolayers and on H-Si(111), versus hydrophilic SiO2. For unencapsulated BP field-effect transistors, the ambient degradation causes large increases in threshold voltage after 6 hours in ambient, followed by a ~10^3 decrease in FET current on/off ratio and mobility after 48 hours. Atomic layer deposited AlOx overlayers effectively suppress ambient degradation, allowing encapsulated BP FETs to maintain high on/off ratios of ~10^3 and mobilities of ~100 cm2/(V*s) for over two weeks in ambient. This work shows that the ambient degradation of BP can be managed effectively when the flakes are sufficiently passivated. In turn, our strategy for enhancing BP environmental stability will accelerate efforts to implement BP in electronic and optoelectronic applications.
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Submitted 7 November, 2014;
originally announced November 2014.
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Influence of Stoichiometry on the Optical and Electrical Properties of Chemical Vapor Deposition Derived MoS$_{2}$
Authors:
In Soo Kim,
Vinod K. Sangwan,
Deep Jariwala,
Joshua D. Wood,
Spencer Park,
Kan-Sheng Chen,
Fengyuan Shi,
Francisco Ruiz-Zepeda,
Arturo Ponce,
Miguel Jose-Yacaman,
Vinayak P. Dravid,
Tobin J. Marks,
Mark C. Hersam,
Lincoln J. Lauhon
Abstract:
Ultrathin transition metal dichalcogenides (TMDCs) of Mo and W show great potential for digital electronics and optoelectronic applications. Whereas early studies were limited to mechanically exfoliated flakes, the large-area synthesis of 2D TMDCs has now been realized by chemical vapor deposition (CVD) based on a sulfurization reaction. Since then, the optoelectronic properties of CVD grown monol…
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Ultrathin transition metal dichalcogenides (TMDCs) of Mo and W show great potential for digital electronics and optoelectronic applications. Whereas early studies were limited to mechanically exfoliated flakes, the large-area synthesis of 2D TMDCs has now been realized by chemical vapor deposition (CVD) based on a sulfurization reaction. Since then, the optoelectronic properties of CVD grown monolayer MoS$_{2}$ have been heavily investigated, but the influence of stoichiometry on the electrical and optical properties has been largely overlooked. Here we systematically vary the stoichiometry of monolayer MoS$_{2}$ during CVD via controlled sulfurization and investigate the associated changes in photoluminescence and electrical properties. X-ray photoelectron spectroscopy is employed to measure relative variations in stoichiometry and the persistence of MoO$_{x}$ species. As MoS$_{2-δ}$ is reduced (increasing δ), the field-effect mobility of monolayer transistors increases while the photoluminescence yield becomes non-uniform. Devices fabricated from monolayers with the lowest sulfur content have negligible hysteresis and a threshold voltage of ~0 V. We conclude that the electrical and optical properties of monolayer MoS$_{2}$ crystals can be tuned via stoichiometry engineering to meet the requirements of various applications.
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Submitted 17 September, 2014;
originally announced September 2014.
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Scanning Tunneling Microscopy Study and Nanomanipulation of Graphene-Coated Water on Mica
Authors:
Kevin T. He,
Joshua D. Wood,
Gregory P. Doidge,
Eric Pop,
Joseph W. Lyding
Abstract:
We study interfacial water trapped between a sheet of graphene and a muscovite (mica) surface using Raman spectroscopy and ultra-high vacuum scanning tunneling microscopy (UHV-STM) at room temperature. We are able to image the graphene-water interface with atomic resolution, revealing a layered network of water trapped underneath the graphene. We identify water layer numbers with a carbon nanotube…
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We study interfacial water trapped between a sheet of graphene and a muscovite (mica) surface using Raman spectroscopy and ultra-high vacuum scanning tunneling microscopy (UHV-STM) at room temperature. We are able to image the graphene-water interface with atomic resolution, revealing a layered network of water trapped underneath the graphene. We identify water layer numbers with a carbon nanotube height reference. Under normal scanning conditions, the water structures remain stable. However, at greater electron energies, we are able to locally manipulate the water using the STM tip.
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Submitted 29 May, 2012;
originally announced May 2012.
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Matrix multiplication using quantum-dot cellular automata to implement conventional microelectronics
Authors:
Joshua D. Wood,
P. Douglas Tougaw
Abstract:
Quantum-dot cellular automata (QCA) shows promise as a post silicon CMOS, low power computational technology. Nevertheless, to generalize QCA for next-generation digital devices, the ability to implement conventional programmable circuits based on NOR, AND, and OR gates is necessary. To this end, we devise a new QCA structure, the QCA matrix multiplier (MM), employing the standard Coulomb blocked,…
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Quantum-dot cellular automata (QCA) shows promise as a post silicon CMOS, low power computational technology. Nevertheless, to generalize QCA for next-generation digital devices, the ability to implement conventional programmable circuits based on NOR, AND, and OR gates is necessary. To this end, we devise a new QCA structure, the QCA matrix multiplier (MM), employing the standard Coulomb blocked, five quantum dot (QD) QCA cell and quasi-adiabatic switching for sequential data latching in the QCA cells. Our structure can multiply two N x M matrices, using one input and one bidirectional input/output data line. The calculation is highly parallelizable, and it is possible to achieve reduced calculation time in exchange for increasing numbers of parallel matrix multiplier units. We show convergent, ab initio simulation results using the Intercellular Hartree Approximation for one, three, and nine matrix multiplier units. The structure can generally implement any programmable logic array (PLA) or any matrix multiplication based operation.
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Submitted 23 October, 2010; v1 submitted 30 June, 2010;
originally announced June 2010.
