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Fermi level dependence of magnetism and magnetotransport in the magnetic topological insulators Bi$_{2}$Te$_{3}$ and BiSbTe$_{3}$ containing self-organized MnBi$_{2}$Te$_{4}$ septuple layers
Authors:
J. Sitnicka,
M. Konczykowski,
K. Sobczak,
P. Skupiński,
K. Grasza,
Z. Adamus,
A. Reszka,
A. Wołoś
Abstract:
The magnetic coupling mechanisms underlying ferromagnetism and magnetotransport phenomena in magnetically doped topological insulators have been a central issue to gain controlled access to the magneto-topological phenomena such as quantum anomalous Hall effect and topological axion insulating state. Here, we focus on the role of bulk carriers in magnetism of the family of magnetic topological ins…
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The magnetic coupling mechanisms underlying ferromagnetism and magnetotransport phenomena in magnetically doped topological insulators have been a central issue to gain controlled access to the magneto-topological phenomena such as quantum anomalous Hall effect and topological axion insulating state. Here, we focus on the role of bulk carriers in magnetism of the family of magnetic topological insulators, in which the host material is either Bi$_{2}$Te$_{3}$ or BiSbTe$_{3}$, containing Mn self-organized in MnBi$_{2}$Te$_{4}$ septuple layers. We tune the Fermi level using the electron irradiation technique and study how magnetic properties vary through the change in carrier density, the role of the irradiation defects is also discussed. Ferromagnetic resonance spectroscopy and magnetotransport measurements show no effect of the Fermi level position on the magnetic anisotropy field and the Curie temperature, respectively, excluding bulk magnetism based on a carrier-mediated process. Furthermore, the magnetotransport measurements show that the anomalous Hall effect is dominated by the intrinsic and dissipationless Berry-phase driven mechanism, with the Hall resistivity enhanced near the bottom/top of the conduction/valence band, due to the Berry curvature which is concentrated near the avoided band crossings. These results demonstrate that the anomalous Hall effect can be effectively managed, maximized, or turned off, by adjusting the Fermi level.
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Submitted 14 June, 2023; v1 submitted 1 November, 2022;
originally announced November 2022.
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Systemic Consequences of Disorder in Magnetically Self-Organized Topological MnBi$_{2}$Te$_{4}/$(Bi$_{2}$Te$_{3}$)$_{n}$ Superlattices
Authors:
Joanna Sitnicka,
Kyungwha Park,
Paweł Skupiński,
Krzysztof Grasza,
Anna Reszka,
Kamil Sobczak,
Jolanta Borysiuk,
Zbigniew Adamus,
Mateusz Tokarczyk,
Andrei Avdonin,
Irina Fedorchenko,
Irina Abaloszewa,
Sylwia Turczyniak-Surdacka,
Natalia Olszowska,
Jacek Kolodziej,
Bogdan J. Kowalski,
Haiming Deng,
Marcin Konczykowski,
Lia Krusin-Elbaum,
Agnieszka Wolos
Abstract:
MnBi$_{2}$Te$_{4}/$(Bi$_{2}$Te$_{3}$)$_{n}$ materials system has recently generated strong interest as a natural platform for realization of the quantum anomalous Hall (QAH) state. The system is magnetically much better ordered than substitutionally doped materials, however, the detrimental effects of certain disorders are becoming increasingly acknowledged. Here, from compiling structural, compos…
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MnBi$_{2}$Te$_{4}/$(Bi$_{2}$Te$_{3}$)$_{n}$ materials system has recently generated strong interest as a natural platform for realization of the quantum anomalous Hall (QAH) state. The system is magnetically much better ordered than substitutionally doped materials, however, the detrimental effects of certain disorders are becoming increasingly acknowledged. Here, from compiling structural, compositional, and magnetic metrics of disorder in ferromagnetic MnBi$_{2}$Te$_{4}/$(Bi$_{2}$Te$_{3}$)$_{n}$ it is found that migration of Mn between MnBi$_{2}$T$e_{4}$ septuple layers (SLs) and otherwise non-magnetic Bi$_{2}$Te$_{3}$ quintuple layers (QLs) has systemic consequences - it induces ferromagnetic coupling of Mn-depleted SLs with Mn-doped QLs, seen in ferromagnetic resonance as an acoustic and optical resonance mode of the two coupled spin subsystems. Even for a large SL separation (n $\gtrsim$ 4 QLs) the structure cannot be considered as a stack of uncoupled two-dimensional layers. Angle-resolved photoemission spectroscopy and density functional theory studies show that Mn disorder within an SL causes delocalization of electron wavefunctions and a change of the surface bandstructure as compared to the ideal MnBi$_{2}$Te$_{4}/$(Bi$_{2}$Te$_{3}$)$_{n}$. These findings highlight the critical importance of inter- and intra-SL disorder towards achieving new QAH platforms as well as exploring novel axion physics in intrinsic topological magnets.
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Submitted 9 September, 2021; v1 submitted 31 August, 2021;
originally announced September 2021.
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Observation of high-temperature quantum anomalous Hall regime in intrinsic MnBi$_2$Te$_4$/Bi$_2$Te$_3$ superlattice
Authors:
Haiming Deng,
Zhiyi Chen,
Agnieszka Wolos,
Marcin Konczykowski,
Kamil Sobczak,
Joanna Sitnicka,
Irina V. Fedorchenko,
Jolanta Borysiuk,
Tristan Heider,
Lukasz Plucinski,
Kyungwha Park,
Alexandru B. Georgescu,
Jennifer Cano,
Lia Krusin-Elbaum
Abstract:
The quantum anomalous Hall effect is a fundamental transport response of a topologically non-trivial system in zero magnetic field. Its physical origin relies on the intrinsically inverted electronic band structure and ferromagnetism, and its most consequential manifestation is the dissipation-free flow of chiral charge currents at the edges that can potentially transform future quantum electronic…
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The quantum anomalous Hall effect is a fundamental transport response of a topologically non-trivial system in zero magnetic field. Its physical origin relies on the intrinsically inverted electronic band structure and ferromagnetism, and its most consequential manifestation is the dissipation-free flow of chiral charge currents at the edges that can potentially transform future quantum electronics. Here we report a previously unknown Berry-curvature-driven anomalous Hall regime ('Q-window') at above-Kelvin temperatures in the magnetic topological bulk crystals where through growth Mn ions self-organize into a period-ordered MnBi$_2$Te$_4$/Bi$_2$Te$_3$ superlattice. Robust ferromagnetism of the MnBi$_2$Te$_4$ monolayers opens a large surface gap, and anomalous Hall conductance reaches an $e^2/h$ quantization plateau when the Fermi level is tuned into this gap within a Q-window in which the anomalous Hall conductance from the bulk is to a high precision zero. The quantization in this new regime is not obstructed by the bulk conduction channels and thus should be present in a broad family of topological magnets.
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Submitted 28 January, 2020;
originally announced January 2020.
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Surface-enhanced Raman scattering of graphene caused by self-induced nanogating by GaN nanowire array
Authors:
Jakub Kierdaszuk,
Piotr Kaźmierczak,
Rafał Bożek,
Justyna Grzonka,
Aleksandra Krajewska,
Zbigniew R. Zytkiewicz,
Marta Sobanska,
Kamil Klosek,
Agnieszka Wołoś,
Maria Kamińska,
Andrzej Wysmołek,
Aneta Drabińska
Abstract:
A constant height of gallium nitride (GaN) nanowires with graphene deposited on them is shown to have a strong enhancement of Raman scattering, whilst variable height nanowires fail to give such an enhancement. Scanning electron microscopy reveals a smooth graphene surface which is present when the GaN nanowires are uniform, whereas graphene on nanowires with substantial height differences is obse…
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A constant height of gallium nitride (GaN) nanowires with graphene deposited on them is shown to have a strong enhancement of Raman scattering, whilst variable height nanowires fail to give such an enhancement. Scanning electron microscopy reveals a smooth graphene surface which is present when the GaN nanowires are uniform, whereas graphene on nanowires with substantial height differences is observed to be pierced and stretched by the uppermost nanowires. The energy shifts of the characteristic Raman bands confirms that these differences in the nanowire height has a significant impact on the local graphene strain and the carrier concentration. The images obtained by Kelvin probe force microscopy show clearly that the carrier concentration in graphene is modulated by the nanowire substrate and dependent on the nanowire density. Therefore, the observed surface enhanced Raman scattering for graphene deposited on GaN nanowires of comparable height is triggered by self-induced nano-gating to the graphene. However, no clear correlation of the enhancement with the strain or the carrier concentration of graphene was discovered.
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Submitted 7 November, 2017; v1 submitted 14 September, 2017;
originally announced September 2017.
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Stable topological insulators achieved using high energy electron beams
Authors:
Lukas Zhao,
Marcin Konczykowski,
Haiming Deng,
Inna Korzhovska,
Milan Begliarbekov,
Zhiyi Chen,
Evangelos Papalazarou,
Marino Marsi,
Luca Perfetti,
Andrzej Hruban,
Agnieszka Wołoś,
Lia Krusin-Elbaum
Abstract:
Topological insulators are transformative quantum solids with immune-to-disorder metallic surface states having Dirac band structure. Ubiquitous charged bulk defects, however, pull the Fermi energy into the bulk bands, denying access to surface charge transport. Here we demonstrate that irradiation with swift ($\sim 2.5$ MeV energy) electron beams allows to compensate these defects, bring the Ferm…
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Topological insulators are transformative quantum solids with immune-to-disorder metallic surface states having Dirac band structure. Ubiquitous charged bulk defects, however, pull the Fermi energy into the bulk bands, denying access to surface charge transport. Here we demonstrate that irradiation with swift ($\sim 2.5$ MeV energy) electron beams allows to compensate these defects, bring the Fermi level back into the bulk gap, and reach the charge neutrality point (CNP). Controlling the beam fluence we tune bulk conductivity from \textit{p}- (hole-like) to \textit{n}-type (electron-like), crossing the Dirac point and back, while preserving the Dirac energy dispersion. The CNP conductance has a two-dimensional (2D) character on the order of ten conductance quanta $G_0 =e^2/h$, and reveals, both in Bi$_2$Te$_3$ and Bi$_2$Se$_3$, the presence of only two quantum channels corresponding to two topological surfaces. The intrinsic quantum transport of the topological states is accessible disregarding the bulk size.
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Submitted 23 May, 2016;
originally announced May 2016.
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Enhanced Raman scattering and weak localization in graphene deposited on GaN nanowires
Authors:
Jakub Kierdaszuk,
Piotr Kaźmierczak,
Aneta Drabińska,
Krzysztof Korona,
Agnieszka Wołoś,
Maria Kamińska,
Andrzej Wysmołek,
Iwona Pasternak,
Aleksandra Krajewska,
Krzysztof Pakuła,
Zbigniew R. Zytkiewicz
Abstract:
The influence of GaN nanowires on the optical and electrical properties of graphene deposited on them was studied using Raman spectroscopy and microwave induced electron transport method. It was found that interaction with the nanowires induces spectral changes as well as large enhancement of Raman scattering intensity. Surprisingly, the smallest enhancement (about 30-fold) was observed for the de…
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The influence of GaN nanowires on the optical and electrical properties of graphene deposited on them was studied using Raman spectroscopy and microwave induced electron transport method. It was found that interaction with the nanowires induces spectral changes as well as large enhancement of Raman scattering intensity. Surprisingly, the smallest enhancement (about 30-fold) was observed for the defect induced D' process and the highest intensity increase (over 50-fold) was found for the 2D transition. The observed energy shifts of the G and 2D bands allowed to determine carrier concentration fluctuations induced by GaN nanowires. Comparison of Raman scattering spatial intensity maps and the images obtained using scanning electron microscope led to conclusion that vertically aligned GaN nanowires induce a homogenous strain, substantial spatial modulation of carrier concentration in graphene and unexpected homogenous distribution of defects created by interaction with nanowires. The analysis of the D and D' peak intensity ratio showed that interaction with nanowires also changes the probability of scattering on different types of defects. The Raman studies were correlated with weak localization effect measured using microwave induced contactless electron transport. Temperature dependence of weak localization signal showed electron-electron scattering as a main decoherence mechanism with additional, temperature independent scattering reducing coherence length. We attributed it to the interaction of electrons in graphene with charges present on the top of nanowires due to spontaneous and piezoelectric polarization of GaN. Thus, nanowires act as antennas and generate enhanced near field which can explain the observed large enhancement of Raman scattering intensity.
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Submitted 24 September, 2015; v1 submitted 31 May, 2015;
originally announced June 2015.
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Electron Paramagnetic Resonance of Mn in Bi$_2$Se$_3$ Topological Insulator
Authors:
Agnieszka Wolos,
Aneta Drabinska,
Maria Kaminska,
Andrzej Hruban,
Stanislawa G. Strzelecka,
Andrzej Materna,
Miroslaw Piersa,
Magdalena Romaniec,
Ryszard Diduszko
Abstract:
Electron paramagnetic resonance was used to investigate Mn impurity in Bi$_2$Se$_3$ topological insulator grown by the vertical Bridgman method. Mn in high-spin S = 5/2, Mn$^2$$^+$ configuration, was detected regardless of the conductivity type of the host material. This means that Mn$^2$$^+$(d$^5$) energy level is located within the valence band, and Mn$^1$$^+$(d$^6$) energy level is outside the…
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Electron paramagnetic resonance was used to investigate Mn impurity in Bi$_2$Se$_3$ topological insulator grown by the vertical Bridgman method. Mn in high-spin S = 5/2, Mn$^2$$^+$ configuration, was detected regardless of the conductivity type of the host material. This means that Mn$^2$$^+$(d$^5$) energy level is located within the valence band, and Mn$^1$$^+$(d$^6$) energy level is outside the energy gap of Bi$_2$Se$_3$. The electron paramagnetic resonance spectrum of Mn$^2$$^+$ in Bi$_2$Se$_3$ is characterized by the isotropic g-factor |g| = 1.91 and large axial parameter D = -4.20 GHz x h. This corresponds to the zero-field splitting of the Kramers doublets equal to 8.4 GHz x h and 16.8 GHz x h, respectively, which is comparable to the Zeeman splitting for the X-band. Mn in Bi$_2$Se$_3$ acts as an acceptor, effectively reducing native-high electron concentration, compensating selenium vacancies, and resulting in p-type conductivity.
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Submitted 5 December, 2014;
originally announced December 2014.
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Landau level spectroscopy of relativistic fermions with low Fermi velocity in Bi2Te3 three-dimensional topological insulator
Authors:
A. Wolos,
S. Szyszko,
A. Drabinska,
M. Kaminska,
S. G. Strzelecka,
A. Hruban,
A. Materna,
M. Piersa
Abstract:
X-band microwave spectroscopy is applied to study the cyclotron resonance in Bi2Te3 exposed to ambient conditions. With its help, intraband transitions between Landau levels of relativistic fermions are observed. The Fermi velocity equals to 3260 m/s, which is much lower than has been reported in the literature for samples cleaved in vacuum. Simultaneous observation of bulk Shubnikov - de Haas osc…
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X-band microwave spectroscopy is applied to study the cyclotron resonance in Bi2Te3 exposed to ambient conditions. With its help, intraband transitions between Landau levels of relativistic fermions are observed. The Fermi velocity equals to 3260 m/s, which is much lower than has been reported in the literature for samples cleaved in vacuum. Simultaneous observation of bulk Shubnikov - de Haas oscillations by contactless microwave spectroscopy allows determination of the Fermi level position. Occupation of topological surface states depends not only on bulk Fermi level but also on the surface band bending.
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Submitted 13 November, 2012;
originally announced November 2012.
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Properties of metal-insulator transition and electron spin relaxation in GaN:Si
Authors:
A. Wolos,
Z. Wilamowski,
M. Piersa,
W. Strupinski,
B. Lucznik,
I. Grzegory,
S. Porowski
Abstract:
We investigate properties of do**-induced metal-insulator transition in GaN:Si by means of electron spin resonance and Hall effect. While increasing the do** concentration, Si-related bands are formed below the bottom of the GaN conduction band. The D0 band of single-occupied Si donor sites is centered 27 meV below the bottom of the GaN conduction band, the D- band of double-occupied Si states…
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We investigate properties of do**-induced metal-insulator transition in GaN:Si by means of electron spin resonance and Hall effect. While increasing the do** concentration, Si-related bands are formed below the bottom of the GaN conduction band. The D0 band of single-occupied Si donor sites is centered 27 meV below the bottom of the GaN conduction band, the D- band of double-occupied Si states at 2.7 meV below the bottom of the GaN conduction band. Strong dam** of the magnetic moment occurs due to filling of the D- states at Si concentrations approaching the metal-insulator transition. Simultaneously, shortening of electron spin relaxation time due to limited electron lifetime in the single-occupied D0 band is observed. The metal-insulator transition occurs at the critical concentration of uncompensated donors equal to about 1.6 * 10^18 cm^-3. Electronic states in metallic samples beyond the metal-insulator transition demonstrate non-magnetic character of double-occupied states.
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Submitted 22 December, 2010;
originally announced December 2010.
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Rashba field in GaN
Authors:
A. Wolos,
Z. Wilamowski,
C. Skierbiszewski,
A. Drabinska,
B. Lucznik,
I. Grzegory,
S. Porowski
Abstract:
We discuss problem of Rashba field in bulk GaN and in GaN/AlGaN two-dimensional electron gas, basing on results of X-band microwave resonance experiments. We point at large difference in spin-orbit coupling between bulk material and heterostructures. We observe coupled plasmon-cyclotron resonance from the two-dimensional electron gas, but no spin resonance, being consistent with large zero-field s…
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We discuss problem of Rashba field in bulk GaN and in GaN/AlGaN two-dimensional electron gas, basing on results of X-band microwave resonance experiments. We point at large difference in spin-orbit coupling between bulk material and heterostructures. We observe coupled plasmon-cyclotron resonance from the two-dimensional electron gas, but no spin resonance, being consistent with large zero-field spin splitting due to the Rashba field reported in literature. In contrast, small anisotropy of g-factor of GaN effective mass donors indicates rather weak Rashba spin-orbit coupling in bulk material, not exceed 400 Gauss, alpha_BIA < 4*10^-13 eVcm. Furthermore, we observe new kind of electron spin resonance in GaN, which we attribute to surface electron accumulation layer. We conclude that the sizable Rashba field in GaN/AlGaN heterostructures originates from properties of the interface.
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Submitted 22 December, 2010;
originally announced December 2010.
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Paramagnetic GaN:Fe and ferromagnetic (Ga,Fe)N - relation between structural, electronic, and magnetic properties
Authors:
A. Bonanni,
M. Kiecana,
C. Simbrunner,
Tian Li,
M. Sawicki,
M. Wegscheider. M. Quast,
H. Przybylinska,
A. Navarro-Quezada,
A. Wolos,
W. Jantsch,
T. Dietl
Abstract:
We report on the metalorganic chemical vapor deposition (MOCVD) of GaN:Fe and (Ga,Fe)N layers on c-sapphire substrates and their thorough characterization via high-resolution x-ray diffraction (HRXRD), transmission electron microscopy (TEM), spatially-resolved energy dispersive X-ray spectroscopy (EDS), secondary-ion mass spectroscopy (SIMS), photoluminescence (PL), Hall-effect, electron-paramag…
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We report on the metalorganic chemical vapor deposition (MOCVD) of GaN:Fe and (Ga,Fe)N layers on c-sapphire substrates and their thorough characterization via high-resolution x-ray diffraction (HRXRD), transmission electron microscopy (TEM), spatially-resolved energy dispersive X-ray spectroscopy (EDS), secondary-ion mass spectroscopy (SIMS), photoluminescence (PL), Hall-effect, electron-paramagnetic resonance (EPR), and magnetometry employing a superconducting quantum interference device (SQUID). A combination of TEM and EDS reveals the presence of coherent nanocrystals presumably FexN with the composition and lattice parameter imposed by the host. From both TEM and SIMS studies, it is stated that the density of nanocrystals and, thus the Fe concentration increases towards the surface. In layers with iron content x<0.4% the presence of ferromagnetic signatures, such as magnetization hysteresis and spontaneous magnetization, have been detected. We link the presence of ferromagnetic signatures to the formation of Fe-rich nanocrystals, as evidenced by TEM and EDS studies. This interpretation is supported by magnetization measurements after cooling in- and without an external magnetic field, pointing to superparamagnetic properties of the system. It is argued that the high temperature ferromagnetic response due to spinodal decomposition into regions with small and large concentration of the magnetic component is a generic property of diluted magnetic semiconductors and diluted magnetic oxides showing high apparent Curie temperature.
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Submitted 11 December, 2006; v1 submitted 7 December, 2006;
originally announced December 2006.
