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A transparent waveguide chip for versatile TIRF-based microscopy and nanoscopy
Authors:
Anish Priyadarshi,
Firehun Tsige Dullo,
Deanna L. Wolfson,
Azeem Ahmad,
Nikhil Jayakumar,
Vishesh Dubey,
Jean-Claude Tinguely,
Balpreet Singh Ahluwalia,
Ganapathy Senthil Murugan
Abstract:
Total internal reflection fluorescence microscopy (TIRF) has enabled low-background, live-cell friendly imaging of cell surfaces and other thin samples thanks to the shallow penetration of the evanescent light field into the sample. The implementation of TIRF on optical waveguide chips (c-TIRF) has overcome historical limitations on the magnification and field of view (FOV) compared to lens-based…
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Total internal reflection fluorescence microscopy (TIRF) has enabled low-background, live-cell friendly imaging of cell surfaces and other thin samples thanks to the shallow penetration of the evanescent light field into the sample. The implementation of TIRF on optical waveguide chips (c-TIRF) has overcome historical limitations on the magnification and field of view (FOV) compared to lens-based TIRF, and further allows the light to be guided in complicated patterns that can be used for advanced imaging techniques or selective stimulation of the sample. However, the opacity of the chips themselves has thus far precluded their use on inverted microscopes and complicated sample preparation and handling. In this work, we introduce a new platform for c-TIRF imaging based on a transparent substrate, which is fully compatible with sample handling and imaging procedures commonly used with a standard #1.5 glass coverslip, and is fabricated using standard complementary metal-oxide-semiconductor (CMOS) techniques, which can easily be scaled up for mass production. We demonstrate its performance on synthetic and biological samples using both upright and inverted microscopes, and show how it can be extended to super-resolution applications, achieving a resolution of 116 nm using super resolution radial fluctuations (SRRF). These new chips retain the scalable FOV of opaque chip-based TIRF and the high axial resolution of TIRF, and have the versatility to be used with many different objective lenses, microscopy methods, and handling techniques. We thus see c-TIRF as a technology primed for widespread adoption, increasing both TIRF's accessibility to users and the range of applications that can benefit from it.
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Submitted 1 July, 2020; v1 submitted 11 June, 2020;
originally announced June 2020.
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Influence of ageing on Raman spectra and the conductivity of monolayer graphene samples irradiated by heavy and light ions
Authors:
A. Butenko,
E. Zion,
Yu. Kaganovskii,
L. Wolfson,
V. Richter,
A. Sharoni,
E. Kogan,
M. Kaveh,
I. Shlimak
Abstract:
The influence of long-term ageing (about one year) on the Raman scattering (RS) spectra and the temperature dependence of conductivity has been studied in two series of monolayer graphene samples irradiated by different doses of C$^{+}$ and Xe$^{+}$ ions. It is shown that the main result of ageing consists of changes in the intensity and position of D- and G- and 2D-lines in RS spectra and in an i…
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The influence of long-term ageing (about one year) on the Raman scattering (RS) spectra and the temperature dependence of conductivity has been studied in two series of monolayer graphene samples irradiated by different doses of C$^{+}$ and Xe$^{+}$ ions. It is shown that the main result of ageing consists of changes in the intensity and position of D- and G- and 2D-lines in RS spectra and in an increase of the conductivity. The observed effects are explained in terms of an increase of the radius of the \textquotedblleft activated\textquotedblright{} area around structural defects.
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Submitted 19 December, 2016;
originally announced December 2016.
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Effect of annealing on Raman scattering spectra of monolayer graphene samples gradually disordered by ion irradiation
Authors:
E. Zion,
A. Butenko,
Yu. Kaganovskii,
V. Richter,
L. Wolfson,
A. Sharoni,
E. Kogan,
M. Kaveh,
I. Shlimak
Abstract:
The Raman scattering spectra (RS) of two series of monolayer graphene samples irradiated with various doses of C$^{+}$ and Xe$^{+}$ ions were measured after annealing in high vacuum, and in forming gas (95\%Ar+5\%H$_{2}$). It was found that these methods of annealing have dramatically different influence on the RS lines. Annealing in vacuum below 500$^{\circ}$C leads to significant decrease of bot…
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The Raman scattering spectra (RS) of two series of monolayer graphene samples irradiated with various doses of C$^{+}$ and Xe$^{+}$ ions were measured after annealing in high vacuum, and in forming gas (95\%Ar+5\%H$_{2}$). It was found that these methods of annealing have dramatically different influence on the RS lines. Annealing in vacuum below 500$^{\circ}$C leads to significant decrease of both D-line, associated with defects, and 2D-line, associated with the intact lattice structure, which can be explained by annealing-induced enhanced do**. Further annealing in vacuum up to 1000$^{\circ}$C leads to significant increase of 2D-line together with continuous decrease of D-line, which gives evidence of partial removal of defects and recovery of the damaged lattice. Annealing in forming gas is less effective in this sense. The blue shift of all lines is observed after annealing. It is shown that below 500$^{\circ}$C, the unintentional do** is the main mechanism of shift, while at higher annealing temperatures, the lattice strain dominates due to mismatch of the thermal expansion coefficient of graphene and the SiO$_{2}$ substrate. Inhomogeneous distribution of stress and do** across the samples leads to the correlated variation of the amplitude and the peak position of RS lines.
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Submitted 19 December, 2016;
originally announced December 2016.
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Hop** magnetoresistance in ion irradiated monolayer graphene
Authors:
I. Shlimak,
E. Zion,
A. V. Butenko,
L. Wolfson,
V. Richter,
Yu. Kaganovskii,
A. Sharoni,
A. Haran,
D. Naveh,
E. Kogan,
M. Kaveh
Abstract:
Magnetoresistance (MR) of ion irradiated monolayer graphene samples with variable-range hop** (VRH) mechanism of conductivity was measured at temperatures down to $T = 1.8$ K in magnetic fields up to $B = 8$ T. It was observed that in perpendicular magnetic fields, hop** resistivity $R$ decreases, which corresponds to negative MR (NMR), while parallel magnetic field results in positive MR (PMR…
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Magnetoresistance (MR) of ion irradiated monolayer graphene samples with variable-range hop** (VRH) mechanism of conductivity was measured at temperatures down to $T = 1.8$ K in magnetic fields up to $B = 8$ T. It was observed that in perpendicular magnetic fields, hop** resistivity $R$ decreases, which corresponds to negative MR (NMR), while parallel magnetic field results in positive MR (PMR) at low temperatures. NMR is explained on the basis of the "orbital" model in which perpendicular magnetic field suppresses the destructive interference of many paths through the intermediate sites in the total probability of the long-distance tunneling in the VRH regime. At low fields, a quadratic dependence ($|ΔR/R|\sim B^2$) of NMR is observed, while at $B > B^*$, the quadratic dependence is replaced by the linear one. It was found that all NMR curves for different samples and different temperatures could be merged into common dependence when plotted as a function of $B/B^*$. It is shown that $B^*\sim T^{1/2}$ in agreement with predictions of the "orbital" model. The obtained values of $B^*$ allowed also to estimate the localization radius $ξ$ of charge carriers for samples with different degree of disorder. PMR in parallel magnetic fields is explained by suppression of hop** transitions via double occupied states due to alignment of electron spins.
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Submitted 23 October, 2015; v1 submitted 6 July, 2015;
originally announced July 2015.
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Localization of charge carriers in monolayer graphene gradually disordered by ion irradiation
Authors:
E. Zion,
A. Haran,
A. V. Butenko,
L. Wolfson,
Yu. Kaganovskii,
T. Havdala,
A. Sharoni,
D. Naveh,
V. Richter,
M. Kaveh,
E. Kogan,
I. Shlimak
Abstract:
Gradual localization of charge carriers was studied in a series of micro-size samples of monolayer graphene fabricated on the common large scale film and irradiated by different doses of C$^+$ ions with energy 35 keV. Measurements of the temperature dependence of conductivity and magnetoresistance in fields up to 4 T showed that at low disorder, the samples are in the regime of weak localization a…
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Gradual localization of charge carriers was studied in a series of micro-size samples of monolayer graphene fabricated on the common large scale film and irradiated by different doses of C$^+$ ions with energy 35 keV. Measurements of the temperature dependence of conductivity and magnetoresistance in fields up to 4 T showed that at low disorder, the samples are in the regime of weak localization and antilocalization. Further increase of disorder leads to strong localization regime, when conductivity is described by the variable-range-hop** (VRH) mechanism. A crossover from the Mott regime to the Efros-Shklovskii regime of VRH is observed with decreasing temperature. Theoretical analysis of conductivity in both regimes showed a remarkably good agreement with experimental data.
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Submitted 14 May, 2015; v1 submitted 19 January, 2015;
originally announced January 2015.
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Raman scattering and electrical resistance of highly disordered graphene
Authors:
I. Shlimak,
A. Haran,
E. Zion,
T. Havdala,
Yu. Kaganovskii,
A. V. Butenko,
L. Wolfson,
V. Richter,
D. Naveh,
A. Sharoni,
E. Kogan,
M. Kaveh
Abstract:
Raman scattering (RS) spectra and current-voltage characteristics at room temperature were measured in six series of small samples fabricated by means of electron-beam lithography on the surface of a large size (5x5 mm) industrial monolayer graphene film. Samples were irradiated by different doses of C${}^+$ ion beam up to $10^{15}$ cm${}^{-2}$. It was observed that at the utmost degree of disorde…
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Raman scattering (RS) spectra and current-voltage characteristics at room temperature were measured in six series of small samples fabricated by means of electron-beam lithography on the surface of a large size (5x5 mm) industrial monolayer graphene film. Samples were irradiated by different doses of C${}^+$ ion beam up to $10^{15}$ cm${}^{-2}$. It was observed that at the utmost degree of disorder, the Raman spectra lines disappear which is accompanied by the exponential increase of resistance and change in the current-voltage characteristics.These effects are explained by suggestion that highly disordered graphene film ceases to be a continuous and splits into separate fragments. The relationship between structure (intensity of RS lines) and sample resistance is defined. It is shown that the maximal resistance of the continuous film is of order of reciprocal value of the minimal graphene conductivity $πh/4e^2\approx 20$ kOhm.
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Submitted 2 January, 2015; v1 submitted 13 October, 2014;
originally announced October 2014.
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Energy Loss from a Moving Vortex in Superfluid Helium
Authors:
R. J. Zieve,
C. M. Frei,
D. L. Wolfson
Abstract:
We present measurements on both energy loss and pinning for a vortex terminating on the curved surface of a cylindrical container. We vary surface roughness, cell diameter, fluid velocity, and temperature. Although energy loss and pinning both arise from interactions between the vortex and the surface, their dependences on the experimental parameters differ, suggesting that different mechanisms go…
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We present measurements on both energy loss and pinning for a vortex terminating on the curved surface of a cylindrical container. We vary surface roughness, cell diameter, fluid velocity, and temperature. Although energy loss and pinning both arise from interactions between the vortex and the surface, their dependences on the experimental parameters differ, suggesting that different mechanisms govern the two effects. We propose that the energy loss stems from reconnections with a mesh of microscopic vortices that covers the cell wall, while pinning is dominated by other influences such as the local fluid velocity.
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Submitted 6 September, 2012;
originally announced September 2012.
