-
Proximity induced room-temperature ferromagnetism in graphene probed with spin currents
Authors:
J. C. Leutenantsmeyer,
A. A. Kaverzin,
M. Wojtaszek,
B. J. van Wees
Abstract:
The introduction and control of ferromagnetism in graphene opens up a range of new directions for fundamental and applied studies. Several approaches have been pursued so far, such as introduction of defects, functionalization with adatoms, and sha** of graphene into nanoribbons with well-defined zigzag edges. A more robust and less invasive method utilizes the introduction of an exchange intera…
▽ More
The introduction and control of ferromagnetism in graphene opens up a range of new directions for fundamental and applied studies. Several approaches have been pursued so far, such as introduction of defects, functionalization with adatoms, and sha** of graphene into nanoribbons with well-defined zigzag edges. A more robust and less invasive method utilizes the introduction of an exchange interaction by a ferromagnetic insulator in proximity with graphene.
Here we present a direct measurement of the exchange interaction in room temperature ferromagnetic graphene. We study the spin transport in exfoliated graphene on a yttrium-iron-garnet substrate where the observed spin precession clearly indicates the presence and strength of an exchange field that is an unambiguous evidence of induced ferromagnetism. We describe the results with a modified Bloch diffusion equation and extract an average exchange field of the order of 0.2 T. Further, we demonstrate that a proximity induced 2D ferromagnet can efficiently modulate a spin current by controlling the direction of the exchange field. These results can create a building block for magnetic-gate tuneable spin transport in one-atom-thick spintronic devices.
△ Less
Submitted 5 January, 2016;
originally announced January 2016.
-
Fermi level pinning at the Ge(001) surface - A case for non-standard explanation
Authors:
Mateusz Wojtaszek,
Rafal Zuzak,
Szymon Godlewski,
Marek Kolmer,
Jakub Lis,
Bartosz Such,
Marek Szymonski
Abstract:
To explore the origin of the Fermi level pinning in germanium we investigate the Ge(001) and Ge(001):H surfaces. The absence of relevant surface states in the case of Ge(001):H should unpin the surface Fermi level. This is not observed. For samples with donors as majority dopants the surface Fermi level appears close to the top of the valence band regardless of the surface structure. Surprisingly,…
▽ More
To explore the origin of the Fermi level pinning in germanium we investigate the Ge(001) and Ge(001):H surfaces. The absence of relevant surface states in the case of Ge(001):H should unpin the surface Fermi level. This is not observed. For samples with donors as majority dopants the surface Fermi level appears close to the top of the valence band regardless of the surface structure. Surprisingly, for the passivated surface it is located below the top of the valence band allowing scanning tunneling microscopy imaging within the band gap. We argue that the well known electronic mechanism behind band bending does not apply and a more complicated scenario involving ionic degrees of freedom is therefore necessary. Experimental techniques involve four point probe electric current measurements, scanning tunneling microscopy and spectroscopy.
△ Less
Submitted 12 November, 2015; v1 submitted 9 July, 2015;
originally announced July 2015.
-
Appearance of effective surface conductivity - an experimental and analytic study
Authors:
Jakub Lis,
Mateusz Wojtaszek,
Rafal Zuzak,
Bartosz Such,
Marek Szymonski
Abstract:
Surface conductance measurements on p-type doped germanium show a small but systematic change to the surface conductivity at different length scales. This effect is independent of the structure of the surface states. We interpret this phenomenon as a manifestation of conductivity changes beneath the surface. This hypothesis is confirmed by an analysis of the classical current flow equation. We der…
▽ More
Surface conductance measurements on p-type doped germanium show a small but systematic change to the surface conductivity at different length scales. This effect is independent of the structure of the surface states. We interpret this phenomenon as a manifestation of conductivity changes beneath the surface. This hypothesis is confirmed by an analysis of the classical current flow equation. We derive an integral formula for calculating of the effective surface conductivity as a function of the distance from a point source. Furthermore we derive asymptotic values of the surface conductivity at small and large distances. The actual surface conductivity can only be sampled close to the current source. At large distances, the conductivity measured on the surface corresponds to the bulk value.
△ Less
Submitted 10 August, 2015; v1 submitted 19 May, 2015;
originally announced May 2015.
-
Temperature dependent transport characteristics of graphene/n-Si diodes
Authors:
S. Parui,
R. Ruiter,
P. J. Zomer,
M. Wojtaszek,
B. J. van Wees,
T. Banerjee
Abstract:
Realizing an optimal Schottky interface of graphene on Si is challenging, as the electrical transport strongly depends on the graphene quality and the fabrication processes. Such interfaces are of increasing research interest for integration in diverse electronic devices as they are thermally and chemically stable in all environments, unlike standard metal/semiconductor interfaces. We fabricate su…
▽ More
Realizing an optimal Schottky interface of graphene on Si is challenging, as the electrical transport strongly depends on the graphene quality and the fabrication processes. Such interfaces are of increasing research interest for integration in diverse electronic devices as they are thermally and chemically stable in all environments, unlike standard metal/semiconductor interfaces. We fabricate such interfaces with n-type Si at ambient conditions and find their electrical characteristics to be highly rectifying, with minimal reverse leakage current ($<$10$^{-10}$ A) and rectification of more than $10^6$. We extract Schottky barrier height of 0.69 eV for the exfoliated graphene and 0.83 eV for the CVD graphene devices at room temperature. The temperature dependent electrical characteristics suggest the influence of inhomogeneities at the graphene/n-Si interface. A quantitative analysis of the inhomogeneity in Schottky barrier heights is presented using the potential fluctuation model proposed by Werner and Güttler.
△ Less
Submitted 31 December, 2014;
originally announced January 2015.
-
Absence of hyperfine effects in $^{13}$C-graphene spin valve devices
Authors:
M. Wojtaszek,
I. J. Vera-Marun,
E. Whiteway,
M. Hilke,
B. J. van Wees
Abstract:
The carbon isotope $^{13}$C, in contrast to $^{12}$C, possesses a nuclear magnetic moment and can induce electron spin dephasing in graphene. This effect is usually neglected due to the low abundance of $^{13}$C in natural carbon allotropes ($\sim$1 %). Chemical vapor deposition (CVD) allows for artificial synthesis of graphene solely from a $^{13}$C precursor, potentially amplifying the influence…
▽ More
The carbon isotope $^{13}$C, in contrast to $^{12}$C, possesses a nuclear magnetic moment and can induce electron spin dephasing in graphene. This effect is usually neglected due to the low abundance of $^{13}$C in natural carbon allotropes ($\sim$1 %). Chemical vapor deposition (CVD) allows for artificial synthesis of graphene solely from a $^{13}$C precursor, potentially amplifying the influence of the nuclear magnetic moments. In this work we study the effect of hyperfine interactions in pure $^{13}$C-graphene on its spin transport properties. Using Hanle precession measurements we determine the spin relaxation time and observe a weak increase of $τ_{s}$ with do** and a weak change of $τ_{s}$ with temperature, as in natural graphene. For comparison we study spin transport in pure $^{12}$C-graphene, also synthesized by CVD, and observe similar spin relaxation properties. As the signatures of hyperfine effects can be better resolved in oblique spin-valve and Hanle configurations, we use finite-element modeling to emulate oblique signals in the presence of a hyperfine magnetic field for typical graphene properties. Unlike in the case of GaAs, hyperfine interactions with $^{13}$C nuclei influence electron spin transport only very weakly, even for a fully polarized nuclear system. Also, in the measurements of the oblique spin-valve and Hanle effects no hyperfine features could be resolved. This work experimentally confirms the weak character of hyperfine interactions and the negligible role of $^{13}$C atoms in the spin dephasing processes in graphene.
△ Less
Submitted 25 April, 2014;
originally announced April 2014.
-
Transition between 1D and 0D spin transport studied by Hanle precession
Authors:
M. Wojtaszek,
I. J. Vera-Marun,
B. J. van Wees
Abstract:
The precession of electron spins in a perpendicular magnetic field, the so called Hanle effect, provides an unique insight into spin properties of a non-magnetic material. In practice, the spin signal is fitted to the analytic solution of the spin Bloch equation, which accounts for diffusion, relaxation and precession effects on spin. The analytic formula, however, is derived for an infinite lengt…
▽ More
The precession of electron spins in a perpendicular magnetic field, the so called Hanle effect, provides an unique insight into spin properties of a non-magnetic material. In practice, the spin signal is fitted to the analytic solution of the spin Bloch equation, which accounts for diffusion, relaxation and precession effects on spin. The analytic formula, however, is derived for an infinite length of the 1D spin channel. This is usually not satisfied in the real devices. The finite size of the channel length $l_{\text{dev}}$ leads to confinement of spins and increase of spin accumulation. Moreover, reflection of spins from the channel ends leads to spin interference, altering the characteristic precession lineshape. In this work we study the influence of finite $l_{\text{dev}}$ on the Hanle lineshape and show when it can lead to a two-fold discrepancy in the extracted spin coefficients. We propose the extension of the Hanle analytic formula to include the geometrical aspects of the real device and get an excellent agreement with a finite-element model of spin precession, where this geometry is explicitly set. We also demonstrate that in the limit of a channel length shorter than the spin relaxation length $λ_{s}$, the spin diffusion is negligible and a 0D spin transport description, with Lorentzian precession dependence applies. We provide a universal criterion for which transport description, 0D or 1D, to apply depending on the ratio $l_{\text{dev}}/λ_{s}$ and the corresponding accuracy of such a choice.
△ Less
Submitted 24 April, 2014;
originally announced April 2014.
-
Electronic inhomogeneities in graphene: the role of the substrate interaction and chemical do**
Authors:
A. Castellanos-Gomez,
Arramel,
M. Wojtaszek,
R. H. M. Smit,
N. Tombros,
N. Agraït,
B. J. van Wees,
G. Rubio-Bollinger
Abstract:
We probe the local inhomogeneities of the electronic properties of graphene at the nanoscale using scanning probe microscopy techniques. First, we focus on the study of the electronic inhomogeneities caused by the graphene-substrate interaction in graphene samples exfoliated on silicon oxide. We find that charged impurities, present in the graphene-substrate interface, perturb the carrier density…
▽ More
We probe the local inhomogeneities of the electronic properties of graphene at the nanoscale using scanning probe microscopy techniques. First, we focus on the study of the electronic inhomogeneities caused by the graphene-substrate interaction in graphene samples exfoliated on silicon oxide. We find that charged impurities, present in the graphene-substrate interface, perturb the carrier density significantly and alter the electronic properties of graphene. This finding helps to understand the observed device-to-device variation typically observed in graphene-based electronic devices. Second, we probe the effect of chemical modification in the electronic properties of graphene, grown by chemical vapour deposition on nickel. We find that both the chemisorption of hydrogen and the physisorption of porphyrin molecules strongly depress the conductance at low bias indicating the opening of a bandgap in graphene, paving the way towards the chemical engineering of the electronic properties of graphene.
△ Less
Submitted 15 October, 2012;
originally announced October 2012.
-
Enhancement of spin relaxation time in hydrogenated graphene spin valve devices
Authors:
M. Wojtaszek,
I. J. Vera-Marun,
T. Maassen,
B. J. van Wees
Abstract:
Hydrogen adsorbates in graphene are interesting as they are not only strong Coulomb scatterers but they also induce a change in orbital hybridization of the carbon network from sp^2 into sp^3. This change increases the spin-orbit coupling and is expected to largely modify spin relaxation. In this work we report the change in spin transport properties of graphene due to plasma hydrogenation. We obs…
▽ More
Hydrogen adsorbates in graphene are interesting as they are not only strong Coulomb scatterers but they also induce a change in orbital hybridization of the carbon network from sp^2 into sp^3. This change increases the spin-orbit coupling and is expected to largely modify spin relaxation. In this work we report the change in spin transport properties of graphene due to plasma hydrogenation. We observe an up to three-fold increase of spin relaxation time tau_S after moderate hydrogen exposure. This increase of tau_S is accompanied by the decrease of charge and spin diffusion coefficients, resulting in a minor change in spin relaxation length lambda_S. At high carrier density we obtain lambda_S of 7 microns, which allows for spin detection over a distance of 11 microns. After hydrogenation a value of tau_S as high as 2.7 ns is measured at room temperature.
△ Less
Submitted 11 September, 2012;
originally announced September 2012.
-
Reversible hydrogenation and band gap opening of graphene and graphite surfaces probed by scanning tunneling spectroscopy
Authors:
Andres Castellanos-Gomez,
Magdalena Wojtaszek,
Arramel,
Nikolaos Tombros,
Bart J. van Wees
Abstract:
The effect of hydrogenation on the topography and the electronic properties of graphene and graphite surfaces are studied by scanning tunneling microscopy and spectroscopy. The surfaces are chemically modified using Ar/H2 plasma. Analyzing thousands of scanning tunneling spectroscopy measurements we determine that the hydrogen chemisorption on the surface of graphite/graphene opens on average an e…
▽ More
The effect of hydrogenation on the topography and the electronic properties of graphene and graphite surfaces are studied by scanning tunneling microscopy and spectroscopy. The surfaces are chemically modified using Ar/H2 plasma. Analyzing thousands of scanning tunneling spectroscopy measurements we determine that the hydrogen chemisorption on the surface of graphite/graphene opens on average an energy band gap of 0.4 eV around the Fermi level. We find that although the plasma treatment modifies the surface topography in a non-reversible way, the change in the electronic properties can be reversed by a moderate thermal annealing and the samples can be hydrogenated again yielding a similar, but slightly reduced, semiconducting behavior after the second hydrogenation.
△ Less
Submitted 16 May, 2012;
originally announced May 2012.
-
Atomically thin mica flakes and their application as ultrathin insulating substrates for graphene
Authors:
Andres Castellanos-Gomez,
Magdalena Wojtaszek,
Nikolaos Tombros,
Nicolas Agrait,
Bart J. van Wees,
Gabino Rubio-Bollinger
Abstract:
We show that it is possible to deposit, by mechanical exfoliation on SiO2/Si wafers, atomically thin mica flakes down to a single monolayer thickness. The optical contrast of these mica flakes on top of a SiO2/Si substrate, which depends on their thickness, the illumination wavelength and the SiO2 substrate thickness, can be quantitatively accounted for by a Fresnel law based model. The preparatio…
▽ More
We show that it is possible to deposit, by mechanical exfoliation on SiO2/Si wafers, atomically thin mica flakes down to a single monolayer thickness. The optical contrast of these mica flakes on top of a SiO2/Si substrate, which depends on their thickness, the illumination wavelength and the SiO2 substrate thickness, can be quantitatively accounted for by a Fresnel law based model. The preparation of atomically thin insulating crystalline sheets will enable the fabrication of ultrathin defect-free insulating substrates, dielectric barriers or planar electron tunneling junctions. Additionally, we show that few-layer graphene flakes can be deposited on top of a previously transferred mica flake. Our transfer method relies on viscoelastic stamps, as those used for soft lithography. A Raman spectroscopy study shows that such an all-dry deposition technique yields cleaner and higher quality flakes than conventional wet-transfer procedures based on lithographic resists.
△ Less
Submitted 9 September, 2011;
originally announced September 2011.
-
A road to hydrogenating graphene by a reactive ion etching plasma
Authors:
M. Wojtaszek,
N. Tombros,
A. Caretta,
P. H. M. van Loosdrecht,
B. J. van Wees
Abstract:
We report the hydrogenation of single and bilayer graphene by an argon-hydrogen plasma produced in a reactive ion etching (RIE) system. Electronic transport measurements in combination with Raman spectroscopy are used to link the electric mean free path to the optically extracted defect concentration. We emphasize the role of the self-bias of the graphene in suppressing the erosion of the akes dur…
▽ More
We report the hydrogenation of single and bilayer graphene by an argon-hydrogen plasma produced in a reactive ion etching (RIE) system. Electronic transport measurements in combination with Raman spectroscopy are used to link the electric mean free path to the optically extracted defect concentration. We emphasize the role of the self-bias of the graphene in suppressing the erosion of the akes during plasma processing. We show that under the chosen plasma conditions the process does not introduce considerable damage to the graphene sheet and that hydrogenation occurs primarily due to the hydrogen ions from the plasma and not due to fragmentation of water adsorbates on the graphene surface by highly accelerated plasma electrons. For this reason the hydrogenation level can be precisely controlled. The hydrogenation process presented here can be easily implemented in any RIE plasma system.
△ Less
Submitted 8 September, 2011;
originally announced September 2011.
-
Large yield production of high mobility freely suspended graphene electronic devices on a PMGI based organic polymer
Authors:
N. Tombros,
A. Veligura,
J. Junesch,
J. J. van den Berg,
P. J. Zomer,
M. Wojtaszek,
I. J. Vera-Marun,
H. T. Jonkman,
B. J. van Wees
Abstract:
The recent observation of fractional quantum Hall effect in high mobility suspended graphene devices introduced a new direction in graphene physics, the field of electron-electron interaction dynamics. However, the technique used currently for the fabrication of such high mobility devices has several drawbacks. The most important is that the contact materials available for electronic devices are l…
▽ More
The recent observation of fractional quantum Hall effect in high mobility suspended graphene devices introduced a new direction in graphene physics, the field of electron-electron interaction dynamics. However, the technique used currently for the fabrication of such high mobility devices has several drawbacks. The most important is that the contact materials available for electronic devices are limited to only a few metals (Au, Pd, Pt, Cr and Nb) since only those are not attacked by the reactive acid (BHF) etching fabrication step. Here we show a new technique which leads to mechanically stable suspended high mobility graphene devices which is compatible with almost any type of contact material. The graphene devices prepared on a polydimethylglutarimide based organic resist show mobilities as high as 600.000 cm^2/Vs at an electron carrier density n = 5.0 10^9 cm^-2 at 77K. This technique paves the way towards complex suspended graphene based spintronic, superconducting and other types of devices.
△ Less
Submitted 27 September, 2010; v1 submitted 21 September, 2010;
originally announced September 2010.
