Showing 1–2 of 2 results for author: Witmans, F J
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Spectroscopic signature of surface states and bunching of bulk subbands in topological insulator (Bi$_{0.4}$Sb$_{0.6}$)$_2$Te$_3$ thin films
Authors:
L. Mulder,
C. Castenmiller,
F. J. Witmans,
S. Smit,
M. S. Golden,
H. J. W. Zandvliet,
P. L. de Boeij,
A. Brinkman
Abstract:
High quality thin films of the topological insulator (Bi$_{0.4}$Sb$_{0.6}$)$_2$Te$_3$ have been deposited on SrTiO$_3$ (111) by molecular beam epitaxy. Their electronic structure was investigated by in situ angle-resolved photoemission spectroscopy and in situ scanning tunneling spectroscopy. The experimental results reveal striking similarities with relativistic ab-initio tight binding calculatio…
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High quality thin films of the topological insulator (Bi$_{0.4}$Sb$_{0.6}$)$_2$Te$_3$ have been deposited on SrTiO$_3$ (111) by molecular beam epitaxy. Their electronic structure was investigated by in situ angle-resolved photoemission spectroscopy and in situ scanning tunneling spectroscopy. The experimental results reveal striking similarities with relativistic ab-initio tight binding calculations. We find that ultrathin slabs of the three-dimensional topological insulator (Bi$_{0.4}$Sb$_{0.6}$)$_2$Te$_3$ display topological surface states, surface states with large weight on the outermost Te atomic layer, and dispersive bulk energy levels that are quantized. We observe that the bandwidth of the bulk levels is strongly reduced. These bunched bulk states as well as the surface states give rise to strong peaks in the local density of states.
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Submitted 23 December, 2021; v1 submitted 21 December, 2021;
originally announced December 2021.
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Dual modulation STM: Simultaneous high-resolution map** of the differential conductivity and local tunnel barrier height demonstrated on Au(111)
Authors:
V. J. S. Oldenkotte,
F. J. Witmans,
M. H. Siekman,
P. L. de Boeij,
K. Sotthewes,
C. Castenmiller,
M. D. Ackermann,
J. M. Sturm,
H. J. W. Zandvliet
Abstract:
We present a scanning tunneling microscopy (STM) technique to simultaneously measure the topography, the local tunnel barrier height (dI/dz) and the differential conductivity (dI/dV). We modulate the voltage and tip piezo with small sinusoidal signals that exceed the cut-off frequency of the STM electronics and feed the tunneling current into two lock-in amplifiers (LIAs). We derive and follow a s…
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We present a scanning tunneling microscopy (STM) technique to simultaneously measure the topography, the local tunnel barrier height (dI/dz) and the differential conductivity (dI/dV). We modulate the voltage and tip piezo with small sinusoidal signals that exceed the cut-off frequency of the STM electronics and feed the tunneling current into two lock-in amplifiers (LIAs). We derive and follow a set of criteria for the modulation frequencies to avoid any interference between the LIA measurements. To validate the technique, we measure Friedel oscillations and the subtle tunnel barrier difference between the hcp and fcc stacked regions of the Au(111) herringbone reconstruction. Finally, we show that our method is also applicable to open feedback loop measurements by performing grid I(V) spectroscopy.
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Submitted 30 July, 2021;
originally announced July 2021.
