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MBE grown preferentially oriented CdMgO alloy on m- and c-plane sapphire substrates
Authors:
A. Adhikari,
A. Lysak,
A. Wierzbicka,
P. Sybilski,
A. Reszka,
B. S. Witkowski,
E. Przezdziecka
Abstract:
Unlike other II-VI semiconductors, CdO-based transparent oxide has great potential application for the fabrication of many optoelectronic devices. In this work, we study the growth of CdxMg1-xO alloys on m- and on c-plane sapphire substrates in Cd-rich to Mg-rich conditions using the plasma-assisted molecular beam epitaxy method. A structural and morphological study of CdMgO random alloys was carr…
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Unlike other II-VI semiconductors, CdO-based transparent oxide has great potential application for the fabrication of many optoelectronic devices. In this work, we study the growth of CdxMg1-xO alloys on m- and on c-plane sapphire substrates in Cd-rich to Mg-rich conditions using the plasma-assisted molecular beam epitaxy method. A structural and morphological study of CdMgO random alloys was carried out using X-ray diffraction and Atomic Force Microscope (AFM) techniques whereas composition analysis was done by Energy-dispersive X-ray (EDX) spectroscopy method. The optical properties of thin films were investigated by UV-Vis spectroscopy at room temperature. X-ray analysis confirmed the presence of cubic rock salt structure with <111> CdMgO crystallographic orientation on c-plane sapphire and <110> CdMgO preferential orientation on m-plane sapphire. The surface roughness was measured by the AFM. From the absorption curve, the optical bandgaps were determined using Tauc relation and it was found that the bandgap of films is influenced by the incorporation of Mg2+ ions into the CdO lattice. Bowing parameter was calculated both for samples on m- and c- sapphires.
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Submitted 14 February, 2023;
originally announced February 2023.
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Effect of rapid thermal annealing on short period {CdO/ZnO}m SLs grown on m-Al2O3
Authors:
A. Lysak,
E. Przeździecka,
R. Jakiela,
A. Reszka,
B. Witkowski,
Z. Khosravizadeh,
A. Adhikari,
J. M. Sajkowski,
A. Kozanecki
Abstract:
Here, we report on the characterization of {CdO/ZnO}m superlattice structures (SLs) grown by plasma assisted molecular beam epitaxy. The properties of as-grown and annealed SLs deposited on m-oriented sapphire were investigated by secondary ion mass spectrometry (SIMS) and scanning electron microscopy (SEM) in cathodoluminescence (CL) and energy dispersive X-ray modes. The deformation of the cryst…
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Here, we report on the characterization of {CdO/ZnO}m superlattice structures (SLs) grown by plasma assisted molecular beam epitaxy. The properties of as-grown and annealed SLs deposited on m-oriented sapphire were investigated by secondary ion mass spectrometry (SIMS) and scanning electron microscopy (SEM) in cathodoluminescence (CL) and energy dispersive X-ray modes. The deformation of the crystallographic structure of SLs was observed after rapid thermal annealing at 900°C in oxygen flow due to migration and segregation of Cd atoms. SIMS measurements revealed that the distributions of cadmium in the annealed samples depend on the thicknesses of the CdO and ZnO sublayers in the as grown superlattice structures. Depth-resolved CL measurements showed that shifting of the near band edge emission peaks is closely related to the Cd profiles measured with SIMS.
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Submitted 14 February, 2023;
originally announced February 2023.
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Effective Mg Incorporation in CdMgO Alloy on Quartz Substrate Grown by Plasma-assisted MBE
Authors:
A. Adhikari,
A. Wierzbicka,
A. Lysak,
P. Sybilski,
B. S. Witkowski,
E. Przezdziecka
Abstract:
The development of CdMgO ternary alloy with a single cubic phase is challenging but meaningful work for technological advancement. In this work, we have grown a series of Cd1-xMgxO ternary random alloys with various Mg concentrations (x = 0, 30, 32, 45, and 55%) on quartz substrate by plasma-assisted molecular beam epitaxy (PA-MBE) technique. The structural investigations of alloys were performed…
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The development of CdMgO ternary alloy with a single cubic phase is challenging but meaningful work for technological advancement. In this work, we have grown a series of Cd1-xMgxO ternary random alloys with various Mg concentrations (x = 0, 30, 32, 45, and 55%) on quartz substrate by plasma-assisted molecular beam epitaxy (PA-MBE) technique. The structural investigations of alloys were performed using the X-ray diffraction (XRD) technique. The decreases in average crystallite size and lattice parameters were observed with an increase in Mg content in the alloys. XRD analysis confirms a single cubic phase is obtained for alloy compositions. The elemental and morphological studies were carried out using energy dispersive x-ray (EDX) spectroscopy and atomic force microscope (AFM) technique, respectively. The optical investigation was carried out using UV-Vis spectroscopy. The optical bandgaps were estimated using the Tauc relation and it was varied from 2.34 eV to 3.47 eV by varying the Mg content from zero to 55% in the alloys. The Urbach energy increases from 112 meV to 350 meV which suggests a more disordered localized state with an increase in Mg incorporation in the alloys.
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Submitted 21 October, 2022;
originally announced October 2022.
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Fe dopant in ZnO: 2+ vs 3+ valency and ion-carrier s,p-d exchange interaction
Authors:
J. Papierska,
A. Ciechan,
P. Bogusławski,
M. Boshta,
M. M. Gomaa,
E. Chikoidze,
Y. Dumont,
A. Drabińska,
H. Przybylińska,
A. Gardias,
J. Szczytko,
A. Twardowski,
M. Tokarczyk,
G. Kowalski,
B. Witkowski,
K. Sawicki,
W. Pacuski,
M. Nawrocki,
J. Suffczyński
Abstract:
Dopants of transition metal ions in II-VI semiconductors exhibit native 2+ valency. Despite this, 3+ or mixed 3+/2+ valency of iron ions in ZnO was reported previously. Several contradictory mechanisms have been put forward for explanation of this fact so far. Here, we analyze Fe valency in ZnO by complementary theoretical and experimental studies. Our calculations within the generalized gradient…
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Dopants of transition metal ions in II-VI semiconductors exhibit native 2+ valency. Despite this, 3+ or mixed 3+/2+ valency of iron ions in ZnO was reported previously. Several contradictory mechanisms have been put forward for explanation of this fact so far. Here, we analyze Fe valency in ZnO by complementary theoretical and experimental studies. Our calculations within the generalized gradient approximation (GGA+U) indicate that the Fe ion is a relatively shallow donor. Its stable charge state is Fe2+ in ideal ZnO, however, the high energy of the (+/0) transition level enhances the compensation of Fe2+ to Fe3+ by non-intentional acceptors in real samples. Using several experimental methods like electron paramagnetic resonance, magnetometry, conductivity, excitonic magnetic circular dichroism and magneto-photoluminescence we confirm the 3+ valency of the iron ions in polycrystalline (Zn,Fe)O films with the Fe content attaining 0.2%.We find a predicted increase of n-type conductivity upon the Fe do** with the Fe donor ionization energy of 0.25 +/- 0.02 eV consistent with the results of theoretical considerations. Moreover, our magnetooptical measurements confirm the calculated non-vanishing s,p-d exchange interaction between band carriers and localized magnetic moments of the Fe3+ ions in the ZnO, being so far an unsettled issue.
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Submitted 2 December, 2016; v1 submitted 3 March, 2016;
originally announced March 2016.
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The dynamics of co- and counter rotating coupled spherical pendulums
Authors:
Blazej Witkowski,
Przemyslaw Perlikowski,
Awadhesh Prasad,
Tomasz Kapitaniak
Abstract:
The dynamics of co- and counter-rotating coupled spherical pendulums (two lower pendulums are mounted at the end of the upper pendulum) is considered. Linear mode analysis shows the existence of three rotating modes. Starting from linear modes allow we calculate the nonlinear normal modes, which are and present them in frequency-energy plots. With the increase of energy in one mode we observe a sy…
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The dynamics of co- and counter-rotating coupled spherical pendulums (two lower pendulums are mounted at the end of the upper pendulum) is considered. Linear mode analysis shows the existence of three rotating modes. Starting from linear modes allow we calculate the nonlinear normal modes, which are and present them in frequency-energy plots. With the increase of energy in one mode we observe a symmetry breaking pitchfork bifurcation. In the second part of the paper we consider energy transfer between pendulums having different energies. The results for co-rotating (all pendulums rotate in the same direction) and counter-rotating motion (one of lower pendulums rotates in the opposite direction) are presented. In general, the energy fluctuations in counter-rotating pendulums are found to be higher than in the co-rotating case.
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Submitted 5 March, 2014;
originally announced March 2014.
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ZnO, ZnMnO and ZnCoO films grown by atomic layer deposition
Authors:
M. I. Łukasiewicz,
A. Wójcik-Głodowska,
E. Guziewicz,
A. Wolska,
M. T. Klepka,
P. Dłużewski,
R. Jakieła,
E. Łusakowska,
K. Kopalko,
W. Paszkowicz,
Ł. Wachnicki,
B. S. Witkowski,
W. Lisowski,
M. Krawczyk,
J. W. Sobczak,
A. Jabłoński,
M. Godlewski
Abstract:
Despite many efforts the origin of a ferromagnetic (FM) response in ZnMnO and ZnCoO is still not clear. Magnetic investigations of our samples, not discussed here, show that the room temperature FM response is observed only in alloys with a non-uniform Mn or Co distribution. Thus, the control of their distribution is crucial for explanation of contradicted magnetic properties of ZnCoO and ZnMnO re…
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Despite many efforts the origin of a ferromagnetic (FM) response in ZnMnO and ZnCoO is still not clear. Magnetic investigations of our samples, not discussed here, show that the room temperature FM response is observed only in alloys with a non-uniform Mn or Co distribution. Thus, the control of their distribution is crucial for explanation of contradicted magnetic properties of ZnCoO and ZnMnO reported till now. In the present review we discuss advantages of the Atomic Layer Deposition (ALD) growth method, which enables us to control uniformity of ZnMnO and ZnCoO alloys. Properties of ZnO, ZnMnO and ZnCoO films grown by the ALD are discussed.
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Submitted 9 August, 2013;
originally announced August 2013.
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Optical and magnetic properties of ZnCoO layers
Authors:
M. Godlewski,
M. I. Łukasiewicz,
E. Guziewicz,
V. Yu. Ivanov,
Ł. Owczarczyk,
B. S. Witkowski
Abstract:
Optical and magneto-optical properties of ZnCoO films grown at low temperature by Atomic Layer Deposition are discussed. Strong wide band absorption, with onset at about 2.4 eV, is observed in ZnCoO in addition to Co-related intra-shell transitions. This absorption band is related to Co 2+ to 3+ photo-ionization transition. A strong photoluminescence (PL) quenching is observed, which we relate to…
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Optical and magneto-optical properties of ZnCoO films grown at low temperature by Atomic Layer Deposition are discussed. Strong wide band absorption, with onset at about 2.4 eV, is observed in ZnCoO in addition to Co-related intra-shell transitions. This absorption band is related to Co 2+ to 3+ photo-ionization transition. A strong photoluminescence (PL) quenching is observed, which we relate to Co recharging in ZnO lattice. Mechanisms of PL quenching are discussed.
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Submitted 9 August, 2013;
originally announced August 2013.
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Modification of emission properties of ZnO layers due to plasmonic near-field coupling to Ag nanoislands
Authors:
Joanna Papierska,
Bartłomiej S. Witkowski,
Anastasiya Derkachova,
Krzysztof P. Korona,
Johannes Binder,
Krzysztof Gałkowski,
Łukasz Wachnicki,
Marek Godlewski,
Tomasz Dietl,
Jan Suffczyński
Abstract:
A simple fabrication method of Ag nanoislands on ZnO films is presented. Continuous wave and time-resolved photoluminescence and transmission are employed to investigate modifications of visible and UV emissions of ZnO brought about by coupling to localized surface plasmons residing on Ag nanoislands. The size of the nanoislands, determining their absorption and scattering efficiencies, is found t…
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A simple fabrication method of Ag nanoislands on ZnO films is presented. Continuous wave and time-resolved photoluminescence and transmission are employed to investigate modifications of visible and UV emissions of ZnO brought about by coupling to localized surface plasmons residing on Ag nanoislands. The size of the nanoislands, determining their absorption and scattering efficiencies, is found to be an important factor governing plasmonic modification of optical response of ZnO films. The presence of the Ag nanoislands of appropriate dimensions causes a strong (threefold) increase in emission intensity and up to 1.5 times faster recombination. The experimental results are successfully described by model calculations within the Mie theory.
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Submitted 31 January, 2013;
originally announced January 2013.
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Homogenous and heterogeneous magnetism in (Zn,Co)O
Authors:
M. Sawicki,
E. Guziewicz,
M. I. Lukasiewicz,
O. Proselkov,
I. A. Kowalik,
W. Lisowski,
P. Dluzewski,
A. Wittlin,
M. Jaworski,
A. Wolska,
W. Paszkowicz,
R. Jakiela,
B. S. Witkowski,
L. Wachnicki,
M. T. Klepka,
F. J. Luque,
D. Arvanitis,
J. W. Sobczak,
M. Krawczyk,
A. Jablonski,
W. Stefanowicz,
D. Sztenkiel,
M. Godlewski,
T. Dietl
Abstract:
A series of (ZnO)m(CoO)n digital alloys and superlattices grown by atomic layer deposition has been investigated by a range of experimental methods. The data provide evidences that the Co interdiffusion in the digital alloy structures is sufficient to produce truly random Zn1-xCoxO mixed crystals with x up to 40%. Conversely, in the superlattice structures the interdiffusion is not strong enough t…
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A series of (ZnO)m(CoO)n digital alloys and superlattices grown by atomic layer deposition has been investigated by a range of experimental methods. The data provide evidences that the Co interdiffusion in the digital alloy structures is sufficient to produce truly random Zn1-xCoxO mixed crystals with x up to 40%. Conversely, in the superlattice structures the interdiffusion is not strong enough to homogenize the Co content along the growth direction results in the formation of (Zn,Co)O films with spatially modulated Co concentrations. All structures deposited at 160\circC show magnetic properties specific to dilute magnetic semiconductors with localized spins S = 3/2 coupled by strong but short range antiferromagnetic interactions that lead to low temperature spin-glass freezing.
It is demonstrated that ferromagnetic-like features, visible exclusively in layers grown at 200\circC and above, are associated with an interfacial mesh of metallic Co granules residing between the substrate and the (Zn,Co)O layer. This explains why the magnitude of ferromagnetic signal is virtually independent of the film thickness as well as elucidates the origin of magnetic anisotropy. Our conclusions have been derived for layers in which the Co concentration, distribution, and aggregation have been determined by: secondary-ion mass spectroscopy, electron probe micro-analysis, high-resolution transmission electron microscopy with capabilities allowing for chemical analysis; x-ray absorption near-edge structure; extended x-ray absorption fine-structure; x-ray photoemission spectroscopy, and x-ray circular magnetic dichroism. Macroscopic properties of these layers have been investigated by superconducting quantum interference device magnetometery and microwave dielectric losses allowing to confirm the important role of metallic inclusions.
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Submitted 25 January, 2012;
originally announced January 2012.
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Properties and characterization of ALD grown dielectric oxides for MIS structures
Authors:
S. Gieraltowska,
D. Sztenkiel,
E. Guziewicz,
M. Godlewski,
G. Luka,
B. S. Witkowski,
L. Wachnicki,
E. Lusakowska,
T. Dietl,
M. Sawicki
Abstract:
We report on an extensive structural and electrical characterization of under-gate dielectric oxide insulators Al2O3 and HfO2 grown by Atomic Layer Deposition (ALD). We elaborate the ALD growth window for these oxides, finding that the 40-100 nm thick layers of both oxides exhibit fine surface flatness and required amorphous structure. These layers constitute a base for further metallic gate evapo…
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We report on an extensive structural and electrical characterization of under-gate dielectric oxide insulators Al2O3 and HfO2 grown by Atomic Layer Deposition (ALD). We elaborate the ALD growth window for these oxides, finding that the 40-100 nm thick layers of both oxides exhibit fine surface flatness and required amorphous structure. These layers constitute a base for further metallic gate evaporation to complete the Metal-Insulator-Semiconductor structure. Our best devices survive energizing up to ~3 MV/cm at 77 K with the leakage current staying below the state-of-the-art level of 1 nA. At these conditions the displaced charge corresponds to a change of the sheet carrier density of 3 \times 1013 cm-2, what promises an effective modulation of the micromagnetic properties in diluted ferromagnetic semiconductors.
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Submitted 27 July, 2011;
originally announced July 2011.
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Effects related to deposition temperature of ZnCoO films grown by Atomic Layer Deposition - uniformity of Co distribution, structural, optical, electrical and magnetic properties
Authors:
Malgorzata I. Lukasiewicz,
Bartlomiej Witkowski,
Marek Godlewski,
Elzbieta Guziewicz,
Maciej Sawicki,
Wojciech Paszkowicz,
Rafal Jakiela,
Tomasz A. Krajewski,
Grzegorz Luka
Abstract:
In the present study we report on properties of ZnCoO films grown at relatively low temperature by the Atomic Layer Deposition, using two reactive organic zinc precursors (dimethylzinc and diethylzinc). The use of these precursors allowed us the significant reduction of a growth temperature to below 300oC. The influence of growth conditions on the Co distribution in ZnCoO films, their structure an…
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In the present study we report on properties of ZnCoO films grown at relatively low temperature by the Atomic Layer Deposition, using two reactive organic zinc precursors (dimethylzinc and diethylzinc). The use of these precursors allowed us the significant reduction of a growth temperature to below 300oC. The influence of growth conditions on the Co distribution in ZnCoO films, their structure and magnetic properties was investigated using Secondary Ion Mass Spectroscopy, Scanning Electron Microscopy, Cathodoluminescence, Energy Dispersive X-ray Spectrometry (EDX), X-ray diffraction and Superconducting Quantum Interference Device magnetometry. We achieved high uniformity of the films grown at 160°C. Such films are paramagnetic. Films grown at 200° and at higher temperature are nonuniform. Formation of foreign phases in such films was detected using high resolution EDX method. These samples are not purely paramagnetic and show weak ferromagnetic response at low temperature.
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Submitted 26 July, 2011;
originally announced July 2011.
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ZnCoO Films by Atomic Layer Deposition - influence of a growth temperature on uniformity of cobalt distribution
Authors:
M. I. Lukasiewicz,
B. Witkowski,
M. Godlewski,
E. Guziewicz,
M. Sawicki,
W. Paszkowicz,
E. Lusakowska,
R. Jakiela,
T. Krajewski,
I. A. Kowalik,
B. J. Kowalski
Abstract:
We report on the structural, electrical and magnetic properties of ZnCoO thin films grown by Atomic Layer Deposition (ALD) method using reactive organic precursors of zinc and cobalt. As a zinc precursor we applied either dimethylzinc or diethylzinc and cobalt (II) acetyloacetonate as a cobalt precursor. The use of these precursors allowed us the significant reduction of a growth temperature to 30…
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We report on the structural, electrical and magnetic properties of ZnCoO thin films grown by Atomic Layer Deposition (ALD) method using reactive organic precursors of zinc and cobalt. As a zinc precursor we applied either dimethylzinc or diethylzinc and cobalt (II) acetyloacetonate as a cobalt precursor. The use of these precursors allowed us the significant reduction of a growth temperature to 300oC and below, which proved to be very important for the growth of uniform films of ZnCoO. Structural, electrical and magnetic properties of the obtained ZnCoO layers will be discussed based on the results of SIMS, SEM, EDS, XRD, AFM, Hall effect and SQUID investigations.
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Submitted 26 July, 2011;
originally announced July 2011.
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Role of interface in ferromagnetism of (Zn,Co)O films
Authors:
M. Godlewski,
E. Guziewicz,
M. I. Lukasiewicz,
I. A. Kowalik,
M. Sawicki,
B. S. Witkowski,
R. Jakiela,
W. Lisowski,
J. W. Sobczak,
M. Krawczyk
Abstract:
We demonstrate that room temperature ferromagnetic response (RT FR) of ZnCoO films grown at low temperature by the Atomic layer Deposition (ALD) method is due to Co metal accumulations at the ZnCoO/substrate interface region. The accumulated experimental evi evidences allow us to reject several other explanations of this effect in our samples, despite the fact that some of them are likely to be re…
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We demonstrate that room temperature ferromagnetic response (RT FR) of ZnCoO films grown at low temperature by the Atomic layer Deposition (ALD) method is due to Co metal accumulations at the ZnCoO/substrate interface region. The accumulated experimental evi evidences allow us to reject several other explanations of this effect in our samples, despite the fact that some of them are likely to be responsible for the low temperature FM in this class of the material.
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Submitted 26 July, 2011;
originally announced July 2011.
