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Leveraging Secondary Storage to Simulate Deep 54-qubit Sycamore Circuits
Authors:
Edwin Pednault,
John A. Gunnels,
Giacomo Nannicini,
Lior Horesh,
Robert Wisnieff
Abstract:
In a recent paper, we showed that secondary storage can extend the range of quantum circuits that can be practically simulated with classical algorithms. Here we refine those techniques and apply them to the simulation of Sycamore circuits with 53 and 54 qubits, with the entanglement pattern ABCDCDAB that has proven difficult to classically simulate with other approaches. Our analysis shows that o…
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In a recent paper, we showed that secondary storage can extend the range of quantum circuits that can be practically simulated with classical algorithms. Here we refine those techniques and apply them to the simulation of Sycamore circuits with 53 and 54 qubits, with the entanglement pattern ABCDCDAB that has proven difficult to classically simulate with other approaches. Our analysis shows that on the Summit supercomputer at Oak Ridge National Laboratories, such circuits can be simulated with high fidelity to arbitrary depth in a matter of days, outputting all the amplitudes.
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Submitted 22 October, 2019; v1 submitted 21 October, 2019;
originally announced October 2019.
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Pareto-Efficient Quantum Circuit Simulation Using Tensor Contraction Deferral
Authors:
Edwin Pednault,
John A. Gunnels,
Giacomo Nannicini,
Lior Horesh,
Thomas Magerlein,
Edgar Solomonik,
Erik W. Draeger,
Eric T. Holland,
Robert Wisnieff
Abstract:
With the current rate of progress in quantum computing technologies, systems with more than 50 qubits will soon become reality. Computing ideal quantum state amplitudes for circuits of such and larger sizes is a fundamental step to assess both the correctness, performance, and scaling behavior of quantum algorithms and the fidelities of quantum devices. However, resource requirements for such calc…
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With the current rate of progress in quantum computing technologies, systems with more than 50 qubits will soon become reality. Computing ideal quantum state amplitudes for circuits of such and larger sizes is a fundamental step to assess both the correctness, performance, and scaling behavior of quantum algorithms and the fidelities of quantum devices. However, resource requirements for such calculations on classical computers grow exponentially. We show that deferring tensor contractions can extend the boundaries of what can be computed on classical systems. To demonstrate this technique, we present results obtained from a calculation of the complete set of output amplitudes of a universal random circuit with depth 27 in a 2D lattice of $7 \times 7$ qubits, and an arbitrarily selected slice of $2^{37}$ amplitudes of a universal random circuit with depth 23 in a 2D lattice of $8 \times 7$ qubits. Combining our methodology with other decomposition approaches found in the literature, we show that we can simulate $7 \times 7$-qubit random circuits to arbitrary depth by leveraging secondary storage. These calculations were thought to be impossible due to resource requirements.
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Submitted 27 August, 2020; v1 submitted 16 October, 2017;
originally announced October 2017.
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Multilayer epitaxial graphene formed by pyrolysis of polycrystalline silicon-carbide grown on c-plane sapphire substrates
Authors:
Timothy J. McArdle,
Jack O. Chu,
Yu Zhu,
Zihong Liu,
Mahadevaiyer Krishnan,
Christopher M. Breslin,
Christos Dimitrakopoulos,
Robert Wisnieff,
Alfred Grill
Abstract:
We use ultra-high vacuum chemical vapor deposition to grow polycrystalline silicon carbide (SiC) on c-plane sapphire wafers which are then annealed between 1250 and 1450°C in vacuum to create epitaxial multilayer graphene (MLG). Despite the surface roughness and small domain size of the polycrystalline SiC, a conformal MLG film is formed. By planarizing the SiC prior to graphene growth, a reductio…
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We use ultra-high vacuum chemical vapor deposition to grow polycrystalline silicon carbide (SiC) on c-plane sapphire wafers which are then annealed between 1250 and 1450°C in vacuum to create epitaxial multilayer graphene (MLG). Despite the surface roughness and small domain size of the polycrystalline SiC, a conformal MLG film is formed. By planarizing the SiC prior to graphene growth, a reduction of the Raman defect band is observed in the final MLG. The graphene formed on polished SiC films also demonstrates significantly more ordered layer-by-layer growth and increased carrier mobility for the same carrier density as the non-polished samples.
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Submitted 31 March, 2011;
originally announced March 2011.
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Wafer-scale Epitaxial Graphene Growth on the Si-face of Hexagonal SiC (0001) for High Frequency Transistors
Authors:
Christos Dimitrakopoulos,
Yu-Ming Lin,
Alfred Grill,
Damon B. Farmer,
Marcus Freitag,
Yanning Sun,
Shu-Jen Han,
Zhihong Chen,
Keith A. Jenkins,
Yu Zhu,
Zihong Liu,
Timothy J. McArdle,
John A. Ott,
Robert Wisnieff,
Phaedon Avouris
Abstract:
Up to two layers of epitaxial graphene have been grown on the Si-face of two-inch SiC wafers exhibiting room-temperature Hall mobilities up to 1800 cm^2/Vs, measured from ungated, large, 160 micron x 200 micron Hall bars, and up to 4000 cm^2/Vs, from top-gated, small, 1 micron x 1.5 micron Hall bars. The growth process involved a combination of a cleaning step of the SiC in a Si-containing gas, fo…
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Up to two layers of epitaxial graphene have been grown on the Si-face of two-inch SiC wafers exhibiting room-temperature Hall mobilities up to 1800 cm^2/Vs, measured from ungated, large, 160 micron x 200 micron Hall bars, and up to 4000 cm^2/Vs, from top-gated, small, 1 micron x 1.5 micron Hall bars. The growth process involved a combination of a cleaning step of the SiC in a Si-containing gas, followed by an annealing step in Argon for epitaxial graphene formation. The structure and morphology of this graphene has been characterized using AFM, HRTEM, and Raman spectroscopy. Furthermore, top-gated radio frequency field effect transistors (RF-FETs) with a peak cutoff frequency fT of 100 GHz for a gate length of 240 nm were fabricated using epitaxial graphene grown on the Si face of SiC that exhibited Hall mobilities up to 1450 cm^2/Vs from ungated Hall bars and 1575 cm^2/Vs from top-gated ones. This is by far the highest cut-off frequency measured from any kind of graphene.
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Submitted 4 June, 2010;
originally announced June 2010.
