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Ferroelectric and anomalous quantum Hall states in bare rhombohedral trilayer graphene
Authors:
Felix Winterer,
Fabian R. Geisenhof,
Noelia Fernandez,
Anna M. Seiler,
Fan Zhang,
R. Thomas Weitz
Abstract:
Nontrivial interacting phases can emerge in elementary materials. As a prime example, continuing advances in device quality have facilitated the observation of a variety of spontaneous quantum Hall-like states, a cascade of Stoner-like magnets, and an unconventional superconductor in bilayer graphene. Its natural extension, rhombohedral trilayer graphene is predicted to be even more susceptible to…
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Nontrivial interacting phases can emerge in elementary materials. As a prime example, continuing advances in device quality have facilitated the observation of a variety of spontaneous quantum Hall-like states, a cascade of Stoner-like magnets, and an unconventional superconductor in bilayer graphene. Its natural extension, rhombohedral trilayer graphene is predicted to be even more susceptible to interactions given its even flatter low-energy bands and larger winding number. Theoretically, five spontaneous quantum Hall phases have been proposed to be candidate ground states. Here, we provide transport evidence for observing four of the five competing ordered states in interaction-maximized, dually-gated, rhombohedral trilayer graphene. In particular, at vanishing but finite magnetic fields, two states with Chern numbers 3 and 6 can be stabilized at elevated and low electric fields, respectively, and both exhibit clear magnetic hysteresis. We also reveal that the quantum Hall ferromagnets of the zeroth Landau level are ferroelectrics with spontaneous layer polarizations even at zero electric field, as evidenced by electric hysteresis. Our findings exemplify the possible birth of rich interacting electron physics in a simple elementary material.
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Submitted 27 June, 2023; v1 submitted 8 May, 2023;
originally announced May 2023.
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Quantum cascade of new correlated phases in trigonally warped bilayer graphene
Authors:
Anna M. Seiler,
Fabian R. Geisenhof,
Felix Winterer,
Kenji Watanabe,
Takashi Taniguchi,
Tianyi Xu,
Fan Zhang,
R. Thomas Weitz
Abstract:
Divergent density of states offers the unique opportunity to explore a wide variety of correlated electron physics. In the thinnest limit, this has been predicted and verified in the ultra-flat bands of magic-angle twisted bilayer graphene, the band touching points of few-layer rhombohedral graphite, and the lightly doped rhombohedral trilayer graphene. The simpler and seemingly better understood…
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Divergent density of states offers the unique opportunity to explore a wide variety of correlated electron physics. In the thinnest limit, this has been predicted and verified in the ultra-flat bands of magic-angle twisted bilayer graphene, the band touching points of few-layer rhombohedral graphite, and the lightly doped rhombohedral trilayer graphene. The simpler and seemingly better understood Bernal bilayer graphene is also susceptible to orbital magnetism-driven phases at charge neutrality, such as layer antiferromagnet and quantum anomalous Hall octet. Here we report the discovery of a cascade of novel correlated phases in the vicinity of electric-field-controlled Lifshitz transitions and van Hove singularities in trigonally warped bilayer graphene. We provide compelling evidence for the observation of Stoner ferromagnets - half and quarter metals. More prominently, we identify signatures consistent with a topologically nontrivial Wigner-Hall crystal at zero magnetic field and its transition to a trivial Wigner crystal, as well as two correlated metals whose behavior deviates from standard Fermi liquids. Our results in this reproducible, tunable, simple system opens a new chapter for studying strongly correlated electrons.
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Submitted 11 November, 2021;
originally announced November 2021.
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Interplay between topological protected valley and quantum Hall edge transport
Authors:
Fabian R. Geisenhof,
Felix Winterer,
Anna M. Seiler,
Jakob Lenz,
Ivar Martin,
R. Thomas Weitz
Abstract:
An established way of realizing topologically protected states in a two-dimensional electron gas is by applying a perpendicular magnetic field thus creating quantum Hall edge channels. In electrostatically gapped bilayer graphene intriguingly, even in the absence of a magnetic field topologically protected electronic states can emerge at naturally occurring stacking domain walls. While individuall…
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An established way of realizing topologically protected states in a two-dimensional electron gas is by applying a perpendicular magnetic field thus creating quantum Hall edge channels. In electrostatically gapped bilayer graphene intriguingly, even in the absence of a magnetic field topologically protected electronic states can emerge at naturally occurring stacking domain walls. While individually both types of topologically protected states have been investigated, their intriguing interplay remains poorly understood. Here, we focus on the interplay between topological domain wall states and quantum Hall edge transport within the eight-fold degenerate zeroth Landau level of high-quality suspended bilayer graphene. We find that the two-terminal conductance remains approximately constant for low magnetic fields throughout the distinct quantum Hall states since the conduction channels are traded between domain wall and device edges. For high magnetic fields, however, we observe evidence of transport suppression at the domain wall, which can be attributed to the emergence of spectral minigaps. This indicates that stacking domain walls do potentially do not correspond to a topological domain wall in the order parameter.
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Submitted 10 November, 2021;
originally announced November 2021.
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Spontaneous Gully Polarized Quantum Hall States in ABA Trilayer Graphene
Authors:
F. Winterer,
A. M. Seiler,
A. Ghazaryan,
F. R. Geisenhof,
K. Watanabe,
T. Taniguchi,
M. Serbyn,
R. T. Weitz
Abstract:
Bernal-stacked multilayer graphene is a versatile platform to explore quantum transport phenomena and interaction physics due to its exceptional tunability via electrostatic gating. For instance, upon applying a perpendicular electric field, its band structure exhibits several off-center Dirac points (so-called Dirac gullies) in each valley. Here, the formation of Dirac gullies and the interaction…
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Bernal-stacked multilayer graphene is a versatile platform to explore quantum transport phenomena and interaction physics due to its exceptional tunability via electrostatic gating. For instance, upon applying a perpendicular electric field, its band structure exhibits several off-center Dirac points (so-called Dirac gullies) in each valley. Here, the formation of Dirac gullies and the interaction-induced breakdown of gully coherence is explored via magnetotransport measurements in high-quality Bernal-stacked (ABA) trilayer graphene. In the absence of a magnetic field, multiple Lifshitz transitions as function of electric field and charge carrier density indicating the formation of Dirac gullies are identified. In the quantum Hall regime and high electric fields, the emergence of Dirac gullies is evident as an increase in Landau level degeneracy. When tuning both electric and magnetic fields, electron-electron interactions can be controllably enhanced until the gully degeneracy is eventually lifted. The arising correlated ground state is consistent with a previously predicted nematic phase that spontaneously breaks the rotational gully symmetry.
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Submitted 1 September, 2021;
originally announced September 2021.
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Tunable quantum anomalous Hall octet driven by orbital magnetism in bilayer graphene
Authors:
Fabian R. Geisenhof,
Felix Winterer,
Anna M. Seiler,
Jakob Lenz,
Tianyi Xu,
Fan Zhang,
R. Thomas Weitz
Abstract:
The quantum anomalous Hall (QAH) effect - a macroscopic manifestation of chiral band topology at zero magnetic field - has only been experimentally realized by magnetic do** of topological insulators (1 - 3) and delicate design of Moire heterostructures (4 - 8). However, the seemingly simple bilayer graphene without magnetic do** or Moire engineering has long been predicted to host competing o…
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The quantum anomalous Hall (QAH) effect - a macroscopic manifestation of chiral band topology at zero magnetic field - has only been experimentally realized by magnetic do** of topological insulators (1 - 3) and delicate design of Moire heterostructures (4 - 8). However, the seemingly simple bilayer graphene without magnetic do** or Moire engineering has long been predicted to host competing ordered states with QAH effects (9 - 11). Here, we explore states in bilayer graphene with conductance of 2 e2/h that not only survive down to anomalously small magnetic fields and up to temperatures of 5 K, but also exhibit magnetic hysteresis. Together, the experimental signatures provide compelling evidence for orbital magnetism driven QAH behavior with a Chern number tunable via electric and magnetic fields as well as carrier sign. The observed octet of QAH phases is distinct from previous observations due to its peculiar ferrimagnetic and ferrielectric order that is characterized by quantized anomalous charge, spin, valley, and spin-valley Hall behavior.
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Submitted 14 July, 2021;
originally announced July 2021.
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Everything You Always Wanted to Know About Generalization of Proof Obligations in PDR
Authors:
Tobias Seufert,
Felix Winterer,
Christoph Scholl,
Karsten Scheibler,
Tobias Paxian,
Bernd Becker
Abstract:
In this paper we revisit the topic of generalizing proof obligations in bit-level Property Directed Reachability (PDR). We provide a comprehensive study which (1) determines the complexity of the problem, (2) thoroughly analyzes limitations of existing methods, (3) introduces approaches to proof obligation generalization that have never been used in the context of PDR, (4) compares the strengths o…
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In this paper we revisit the topic of generalizing proof obligations in bit-level Property Directed Reachability (PDR). We provide a comprehensive study which (1) determines the complexity of the problem, (2) thoroughly analyzes limitations of existing methods, (3) introduces approaches to proof obligation generalization that have never been used in the context of PDR, (4) compares the strengths of different methods from a theoretical point of view, and (5) intensively evaluates the methods on various benchmarks from hardware model checking as well as from AI planning.
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Submitted 18 August, 2022; v1 submitted 19 May, 2021;
originally announced May 2021.
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Vertical, electrolyte-gated organic transistors: continuous operation in the MA/cm$^2$ regime and use as low-power artificial synapses
Authors:
Jakob Lenz,
Fabio del Giudice,
Fabian R. Geisenhof,
Felix Winterer,
R. Thomas Weitz
Abstract:
Organic semiconductors are usually not thought to show outstanding performance in highly-integrated, sub 100 nm transistors. Consequently, single-crystalline materials such as SWCNTs, MoS2 or inorganic semiconductors are the material of choice at these nanoscopic dimensions. Here, we show that using a novel vertical field-effect transistor design with a channel length of only 40 nm and a footprint…
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Organic semiconductors are usually not thought to show outstanding performance in highly-integrated, sub 100 nm transistors. Consequently, single-crystalline materials such as SWCNTs, MoS2 or inorganic semiconductors are the material of choice at these nanoscopic dimensions. Here, we show that using a novel vertical field-effect transistor design with a channel length of only 40 nm and a footprint of 2 x 80 x 80 nm$^2$, high electrical performance with organic polymers can be realized when using electrolyte gating. Our organic transistors combine high on-state current densities of above 3 MA/cm$^2$, on/off current modulation ratios of up to 108 and large transconductances of up to 5000 S/m. Given the high on-state currents at yet large on/off ratios, our novel structures also show promise for use in artificial neural networks, where they could operate as memristive devices with sub 100 fJ energy usage.
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Submitted 5 February, 2019;
originally announced February 2019.
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Anisotropic Strain Induced Soliton Movement Changes Stacking Order and Bandstructure of Graphene Multilayers
Authors:
Fabian R. Geisenhof,
Felix Winterer,
Stefan Wakolbinger,
Tobias D. Gokus,
Yasin C. Durmaz,
Daniela Priesack,
Jakob Lenz,
Fritz Keilmann,
Kenji Watanabe,
Takashi Taniguchi,
Raúl Guerrero-Avilés,
Marta Pelc,
Andres Ayuela,
R. Thomas Weitz
Abstract:
The crystal structure of solid-state matter greatly affects its electronic properties. For example in multilayer graphene, precise knowledge of the lateral layer arrangement is crucial, since the most stable configurations, Bernal and rhombohedral stacking, exhibit very different electronic properties. Nevertheless, both stacking orders can coexist within one flake, separated by a strain soliton t…
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The crystal structure of solid-state matter greatly affects its electronic properties. For example in multilayer graphene, precise knowledge of the lateral layer arrangement is crucial, since the most stable configurations, Bernal and rhombohedral stacking, exhibit very different electronic properties. Nevertheless, both stacking orders can coexist within one flake, separated by a strain soliton that can host topologically protected states. Clearly, accessing the transport properties of the two stackings and the soliton is of high interest. However, the stacking orders can transform into one another and therefore, the seemingly trivial question how reliable electrical contact can be made to either stacking order can a priori not be answered easily. Here, we show that manufacturing metal contacts to multilayer graphene can move solitons by several $μ$m, unidirectionally enlarging Bernal domains due to arising mechanical strain. Furthermore, we also find that during dry transfer of multilayer graphene onto hexagonal Boron Nitride, such a transformation can happen. Using density functional theory modeling, we corroborate that anisotropic deformations of the multilayer graphene lattice decrease the rhombohedral stacking stability. Finally, we have devised systematics to avoid soliton movement, and how to reliably realize contacts to both stacking configurations.
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Submitted 6 June, 2019; v1 submitted 28 September, 2018;
originally announced October 2018.
