Bimodal Plasmonic Refractive Index Sensors Based on SU-8 Waveguides
Authors:
Omkar Bhalerao,
Stephan Suckow,
Horst Windgassen,
Harry Biller,
Konstantinos Fotiadis,
Stelios Simos,
Evangelia Chatzianagnostou,
Dimosthenis Spasopoulos,
Pratyusha Das,
Laurent Markey,
Jean-Claude Weeber,
Nikos Pleros,
Matthias Schirmer,
Max C. Lemme
Abstract:
Plasmonic refractive index sensors are essential for detecting subtle variations in the ambient environment through surface plasmon interactions. Current efforts utilizing CMOS-compatible, plasmo-photonic Mach-Zehnder interferometers with active power balancing exhibit high sensitivities at the cost of fabrication and measurement complexity. Alternatively, passive bimodal plasmonic interferometers…
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Plasmonic refractive index sensors are essential for detecting subtle variations in the ambient environment through surface plasmon interactions. Current efforts utilizing CMOS-compatible, plasmo-photonic Mach-Zehnder interferometers with active power balancing exhibit high sensitivities at the cost of fabrication and measurement complexity. Alternatively, passive bimodal plasmonic interferometers based on SU-8 waveguides present a cost-effective solution with a smaller device footprint, though they currently lack opto-mechanical isolation due to exposed photonic waveguides. In this work, we introduce innovative polymer-core and polymer-cladded bimodal plasmonic refractive index sensors with high refractive index contrast. Our sensors feature an aluminum stripe, a bilayer SU-8 photonic waveguide core, and the experimental optical cladding polymer SX AR LWL 2.0. They achieve a sensitivity of (6300 $\pm$ 460) nm/RIU (refractive index unit), surpassing both traditional and polymer-based plasmo-photonic sensors. This approach enables integrated, wafer-scale, CMOS-compatible, and low-cost sensors and facilitates plasmonic refractive index sensing platforms for various applications.
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Submitted 9 May, 2024;
originally announced May 2024.
Dissolution of donor-vacancy clusters in heavily doped n-type germanium
Authors:
Slawomir Prucnal,
Maciej O. Liedke,
Xiaoshuang Wang,
Maik Butterling,
Matthias Posselt,
Joachim Knoch,
Horst Windgassen,
Eric Hirschmann,
Yonder Berencén,
Lars Rebohle,
Mao Wang,
Enrico Napoltani,
Jacopo Frigerio,
Andrea Ballabio,
Giovani Isella,
René Hübner,
Andreas Wagner,
Hartmut Bracht,
Manfred Helm,
Shengqiang Zhou
Abstract:
The n-type do** of Ge is a self-limiting process due to the formation of vacancy-donor complexes (DnV with n <= 4) that deactivate the donors. This work unambiguously demonstrates that the dissolution of the dominating P4V clusters in heavily phosphorus-doped Ge epilayers can be achieved by millisecond-flash lamp annealing at about 1050 K. The P4V cluster dissolution increases the carrier concen…
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The n-type do** of Ge is a self-limiting process due to the formation of vacancy-donor complexes (DnV with n <= 4) that deactivate the donors. This work unambiguously demonstrates that the dissolution of the dominating P4V clusters in heavily phosphorus-doped Ge epilayers can be achieved by millisecond-flash lamp annealing at about 1050 K. The P4V cluster dissolution increases the carrier concentration by more than three-fold together with a suppression of phosphorus diffusion. Electrochemical capacitance-voltage measurements in conjunction with secondary ion mass spectrometry, positron annihilation lifetime spectroscopy and theoretical calculations enabled us to address and understand a fundamental problem that has hindered so far the full integration of Ge with complementary-metal-oxide-semiconductor technology.
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Submitted 28 October, 2020;
originally announced October 2020.
