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Breakdown of the static dielectric screening approximation of Coulomb interactions in atomically thin semiconductors
Authors:
Amine Ben Mhenni,
Dinh Van Tuan,
Leonard Geilen,
Marko M. Petrić,
Melike Erdi,
Kenji Watanabe,
Takashi Taniguchi,
Sefaattin Tongay,
Kai Müller,
Nathan P. Wilson,
Jonathan J. Finley,
Hanan Dery,
Matteo Barbone
Abstract:
Coulomb interactions in atomically thin materials are uniquely sensitive to variations in the dielectric screening of the environment, which can be used to control quasiparticles and exotic quantum many-body phases. A static approximation of the dielectric response, where increased dielectric screening is predicted to cause an energy redshift of the exciton resonance, has been until now sufficient…
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Coulomb interactions in atomically thin materials are uniquely sensitive to variations in the dielectric screening of the environment, which can be used to control quasiparticles and exotic quantum many-body phases. A static approximation of the dielectric response, where increased dielectric screening is predicted to cause an energy redshift of the exciton resonance, has been until now sufficient. Here, we use charge-tunable exciton resonances to study screening effects in transition metal dichalcogenide monolayers embedded in materials with dielectric constants ranging from 4 to more than 1000. In contrast to expectations, we observe a blueshift of the exciton resonance exceeding 30 meV for larger dielectric constant environments. By employing a dynamical screening model, we find that while the exciton binding energy remains mostly controlled by the static dielectric response, the exciton self-energy is dominated by the high-frequency response. Dielectrics with markedly different static and high-frequency screening enable the selective addressing of distinct many-body effects in layered materials and their heterostructures, expanding the tunability range and offering new routes to detect and control correlated quantum many-body states and to design optoelectronic and quantum devices.
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Submitted 28 February, 2024;
originally announced February 2024.
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Raman scattering signatures of the strong spin-phonon coupling in the bulk magnetic van der Waals material CrSBr
Authors:
Amit Pawbake,
Thomas Pelini,
Nathan P. Wilson,
Kseniia Mosina,
Zdenek Sofer,
Rolf Heid,
Clement Faugeras
Abstract:
Magnetic excitations in layered magnetic materials that can be thinned down the two-dimensional (2D) monolayer limit are of high interest from a fundamental point of view and for applications perspectives. Raman scattering has played a crucial role in exploring the properties of magnetic layered materials and, even-though it is essentially a probe of lattice vibrations, it can reflect magnetic ord…
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Magnetic excitations in layered magnetic materials that can be thinned down the two-dimensional (2D) monolayer limit are of high interest from a fundamental point of view and for applications perspectives. Raman scattering has played a crucial role in exploring the properties of magnetic layered materials and, even-though it is essentially a probe of lattice vibrations, it can reflect magnetic ordering in solids through the spin-phonon interaction or through the observation of magnon excitations. In bulk CrSBr, a layered A type antiferromagnet (AF), we show that the magnetic ordering can be directly observed in the temperature dependence of the Raman scattering response i) through the variations of the scattered intensities, ii) through the activation of new phonon lines reflecting the change of symmetry with the appearance of the additional magnetic periodicity, and iii) through the observation, below the Neel temperature (TN) of second order Raman scattering processes. We additionally show that the three different magnetic phases encountered in CrSBr, including the recently identified low temperature phase, have a particular Raman scattering signature. This work demonstrates that magnetic ordering can be observed directly in the Raman scattering response of bulk CrSBr with in-plane magnetization, and that it can provide a unique insight into the magnetic phases encountered in magnetic layered materials.
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Submitted 23 November, 2022;
originally announced November 2022.
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Twist-dependent intra- and interlayer excitons in moire MoSe2 homobilayers
Authors:
Viviana Villafañe,
Malte Kremser,
Ruven Hübner,
Marko M. Petrić,
Nathan P. Wilson,
Andreas V. Stier,
Kai Müller,
Matthias Florian,
Alexander Steinhoff,
Jonathan J. Finley
Abstract:
Optoelectronic properties of van der Waals homostructures can be selectively engineered by the relative twist angle between layers. Here, we study the twist-dependent moire coupling in MoSe2 homobilayers. For small angles, we find a pronounced redshift of the K-K and Γ-K excitons accompanied by a transition from K-K to Γ-K emission. Both effects can be traced back to the underlying moire pattern i…
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Optoelectronic properties of van der Waals homostructures can be selectively engineered by the relative twist angle between layers. Here, we study the twist-dependent moire coupling in MoSe2 homobilayers. For small angles, we find a pronounced redshift of the K-K and Γ-K excitons accompanied by a transition from K-K to Γ-K emission. Both effects can be traced back to the underlying moire pattern in the MoSe2 homobilayers, as confirmed by our low-energy continuum model for different moire excitons. We identify two distinct intralayer moire excitons for R-stacking, while H-stacking yields two degenerate intralayer excitons due to inversion symmetry. In both cases, bright interlayer excitons are found at higher energies. The performed calculations are in excellent agreement with experiment and allow us to characterize the observed exciton resonances, providing insight about the layer composition and relevant stacking configuration of different moire exciton species.
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Submitted 21 October, 2022;
originally announced October 2022.
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Strong light-matter interaction with self-hybridized bound states in the continuum in monolithic van der Waals metasurfaces
Authors:
Thomas Weber,
Lucca Kühner,
Luca Sortino,
Amine Ben Mhenni,
Nathan P. Wilson,
Julius Kühne,
Jonathan J. Finley,
Stefan A. Maier,
Andreas Tittl
Abstract:
Photonic bound states in the continuum (BICs) are a standout nanophotonic platform for strong light-matter coupling with transition metal dichalcogenides (TMDCs), but have so far mostly been employed as all-dielectric metasurfaces with adjacent TMDC layers, incurring limitations related to strain, mode overlap, and material integration. In this work, we experimentally demonstrate for the first tim…
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Photonic bound states in the continuum (BICs) are a standout nanophotonic platform for strong light-matter coupling with transition metal dichalcogenides (TMDCs), but have so far mostly been employed as all-dielectric metasurfaces with adjacent TMDC layers, incurring limitations related to strain, mode overlap, and material integration. In this work, we experimentally demonstrate for the first time asymmetry-dependent BIC resonances in 2D arrays of monolithic metasurfaces composed solely of the nanostructured bulk TMDC WS$_2$ with BIC modes exhibiting sharp and tailored linewidths, ideal for selectively enhancing light-matter interactions. Geometrical variation enables the tuning of the BIC resonances across the exciton resonance in bulk WS$_2$, revealing the strong-coupling regime with an anti-crossing pattern and a Rabi splitting of 116 meV. The precise control over the radiative loss channel provided by the BIC concept is harnessed to tailor the Rabi splitting via a geometrical asymmetry parameter of the metasurface. Crucially, the coupling strength itself can be controlled and is shown to be independent of material-intrinsic losses. Our BIC-driven monolithic metasurface platform can readily incorporate other TMDCs or excitonic materials to deliver previously unavailable fundamental insights and practical device concepts for polaritonic applications.
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Submitted 5 September, 2022;
originally announced September 2022.
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The quantum dynamic range of room temperature spin imaging
Authors:
Martin Schalk,
Riccardo Silvioli,
Karina Houska,
Niels van Venrooy,
Katrin Schneider,
Nathan P. Wilson,
Jan Luxa,
Zdenek Sofer,
Dominik Bucher,
Andreas V. Stier,
Jonathan J. Finley
Abstract:
Magnetic resonance imaging of spin systems combines scientific applications in medicine, chemistry and physics. Here, we investigate the pixel-wise coherent quantum dynamics of spins consisting of a 40 by 40 micron sized region of interest implanted with nitrogen vacancy centers (NV) coupled to a nano-magnetic flake of $\mathrm{CrTe_2}$. $\mathrm{CrTe_2}$ is an in-plane van der Waals ferromagnet,…
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Magnetic resonance imaging of spin systems combines scientific applications in medicine, chemistry and physics. Here, we investigate the pixel-wise coherent quantum dynamics of spins consisting of a 40 by 40 micron sized region of interest implanted with nitrogen vacancy centers (NV) coupled to a nano-magnetic flake of $\mathrm{CrTe_2}$. $\mathrm{CrTe_2}$ is an in-plane van der Waals ferromagnet, which we can probe quantitatively by the NV electron's spin signal even at room temperature. First, we combine the nano-scale sample shapes measured by atomic force microscope with the magnetic resonance imaging data. We then map out the coherent dynamics of the colour centers coupled to the van der Waals ferromagnet using pixel-wise coherent Rabi and Ramsey imaging of the NV sensor layer. Next, we fit the pixel-wise solution of the Hamiltonian to the quantum sensor data. Combining data and model, we can explore the detuning range of the spin oscillation with a quantum dynamic range of over $\left|Δ_{max}\right|= 60 { }\mathrm{MHz} $ in the Ramsey interferometry mode. Finally, we show the effect of the $\mathrm{CrTe_2}$ van der Waals magnet on the coherence of the NV sensor layer and measure a 70 times increase in the maximum frequency of the quantum oscillation going from the Rabi to the Ramsey imaging mode.
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Submitted 17 August, 2022;
originally announced August 2022.
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Unveiling the Zero-Phonon Line of the Boron Vacancy Center by Cavity Enhanced Emission
Authors:
Chenjiang Qian,
Viviana Villafañe,
Martin Schalk,
G. V. Astakhov,
Ulrich Kentsch,
Manfred Helm,
Pedro Soubelet,
Nathan P. Wilson,
Roberto Rizzato,
Stephan Mohr,
Alexander W. Holleitner,
Dominik B. Bucher,
Andreas V. Stier,
JonathanJ. Finley
Abstract:
Negatively charged boron vacancies ($V_B^-$) in hexagonal boron nitride (hBN) exhibit a broad emission spectrum due to strong electron-phonon coupling and Jahn-Teller mixing of electronic states. As such, the direct measurement of zero-phonon line (ZPL) of $V_B^-$ has remained elusive. Here, we measure the room-temperature ZPL wavelength to be $773\pm2$ nm by coupling the hBN layer to the high-Q n…
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Negatively charged boron vacancies ($V_B^-$) in hexagonal boron nitride (hBN) exhibit a broad emission spectrum due to strong electron-phonon coupling and Jahn-Teller mixing of electronic states. As such, the direct measurement of zero-phonon line (ZPL) of $V_B^-$ has remained elusive. Here, we measure the room-temperature ZPL wavelength to be $773\pm2$ nm by coupling the hBN layer to the high-Q nanobeam cavity. As the wavelength of cavity mode is tuned, we observe a pronounced intensity resonance, indicating the coupling to $V_B^-$. Our observations are consistent with the spatial redistribution of $V_B^-$ emission. Spatially resolved measurements show a clear Purcell effect maximum at the midpoint of the nanobeam, in accord with the optical field distribution of the cavity mode. Our results are in good agreement with theoretical calculations, opening the way to using $V_B^-$ as cavity spin-photon interfaces.
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Submitted 22 June, 2022; v1 submitted 22 February, 2022;
originally announced February 2022.
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Nonlocal Exciton-Photon Interactions in Hybrid High-Q Beam Nanocavities with Encapsulated MoS$_2$ Monolayers
Authors:
Chenjiang Qian,
Viviana Villafañe,
Pedro Soubelet,
Alexander Hötger,
Takashi Taniguchi,
Kenji Watanabe,
Nathan P. Wilson,
Andreas V. Stier,
Alexander W. Holleitner,
Jonathan J. Finley
Abstract:
Atomically thin semiconductors can be readily integrated into a wide range of nanophotonic architectures for applications in quantum photonics and novel optoelectronic devices. We report the observation of nonlocal interactions of \textit{free} trions in pristine hBN/MoS$_2$/hBN heterostructures coupled to single mode (Q $>10^4$) quasi 0D nanocavities. The high excitonic and photonic quality of th…
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Atomically thin semiconductors can be readily integrated into a wide range of nanophotonic architectures for applications in quantum photonics and novel optoelectronic devices. We report the observation of nonlocal interactions of \textit{free} trions in pristine hBN/MoS$_2$/hBN heterostructures coupled to single mode (Q $>10^4$) quasi 0D nanocavities. The high excitonic and photonic quality of the interaction system stems from our integrated nanofabrication approach simultaneously with the hBN encapsulation and the maximized local cavity field amplitude within the MoS$_2$ monolayer. We observe a nonmonotonic temperature dependence of the cavity-trion interaction strength, consistent with the nonlocal light-matter interactions in which the extent of the center-of-mass wavefunction is comparable to the cavity mode volume in space. Our approach can be generalized to other optically active 2D materials, opening the way towards harnessing novel light-matter interaction regimes for applications in quantum photonics.
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Submitted 25 December, 2022; v1 submitted 9 July, 2021;
originally announced July 2021.
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Interlayer Electronic Coupling on Demand in a 2D Magnetic Semiconductor
Authors:
Nathan P. Wilson,
Kihong Lee,
John Cenker,
Kaichen Xie,
Avalon H. Dismukes,
Evan J. Telford,
Jordan Fonseca,
Shivesh Sivakumar,
Cory Dean,
Ting Cao,
Xavier Roy,
Xiaodong Xu,
Xiaoyang Zhu
Abstract:
When monolayers of two-dimensional (2D) materials are stacked into van der Waals structures, interlayer electronic coupling can introduce entirely new properties, as exemplified by recent discoveries of moiré bands that host highly correlated electronic states and quantum dot-like interlayer exciton lattices. Here we show the magnetic control of interlayer electronic coupling, as manifested in tun…
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When monolayers of two-dimensional (2D) materials are stacked into van der Waals structures, interlayer electronic coupling can introduce entirely new properties, as exemplified by recent discoveries of moiré bands that host highly correlated electronic states and quantum dot-like interlayer exciton lattices. Here we show the magnetic control of interlayer electronic coupling, as manifested in tunable excitonic transitions, in an A-type antiferromagnetic 2D semiconductor CrSBr. Excitonic transitions in bilayer and above can be drastically changed when the magnetic order is switched from layered antiferromagnetic to the field-induced ferromagnetic state, an effect attributed to the spin-allowed interlayer hybridization of electron and hole orbitals in the latter, as revealed by GW-BSE calculations. Our work uncovers a magnetic approach to engineer electronic and excitonic effects in layered magnetic semiconductors.
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Submitted 24 March, 2021;
originally announced March 2021.
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Spontaneous valley polarization of interacting carriers in a monolayer semiconductor
Authors:
**g Li,
Mateusz Goryca,
Nathan P. Wilson,
Andreas V. Stier,
Xiaodong Xu,
Scott A. Crooker
Abstract:
We report magneto-absorption spectroscopy of gated WSe$_2$ monolayers in high magnetic fields up to 60~T. When doped with a 2D Fermi sea of mobile holes, well-resolved sequences of optical transitions are observed in both $σ^\pm$ circular polarizations, which unambiguously and separately indicate the number of filled Landau levels (LLs) in both $K$ and $K'$ valleys. This reveals the interaction-en…
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We report magneto-absorption spectroscopy of gated WSe$_2$ monolayers in high magnetic fields up to 60~T. When doped with a 2D Fermi sea of mobile holes, well-resolved sequences of optical transitions are observed in both $σ^\pm$ circular polarizations, which unambiguously and separately indicate the number of filled Landau levels (LLs) in both $K$ and $K'$ valleys. This reveals the interaction-enhanced valley Zeeman energy, which is found to be highly tunable with hole density $p$. We exploit this tunability to align the LLs in $K$ and $K'$, and find that the 2D hole gas becomes unstable against small changes in LL filling and can spontaneously valley-polarize. These results cannot be understood within a single-particle picture, highlighting the importance of exchange interactions in determining the ground state of 2D carriers in monolayer semiconductors.
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Submitted 5 August, 2020;
originally announced August 2020.
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Layer-Resolved Magnetic Proximity Effect in van der Waals Heterostructures
Authors:
Ding Zhong,
Kyle L. Seyler,
Xiayu Linpeng,
Nathan P. Wilson,
Takashi Taniguchi,
Kenji Watanabe,
Michael A. McGuire,
Kai-Mei C. Fu,
Di Xiao,
Wang Yao,
Xiaodong Xu
Abstract:
Magnetic proximity effects are crucial ingredients for engineering spintronic, superconducting, and topological phenomena in heterostructures. Such effects are highly sensitive to the interfacial electronic properties, such as electron wave function overlap and band alignment. The recent emergence of van der Waals (vdW) magnets enables the possibility of tuning proximity effects via designing hete…
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Magnetic proximity effects are crucial ingredients for engineering spintronic, superconducting, and topological phenomena in heterostructures. Such effects are highly sensitive to the interfacial electronic properties, such as electron wave function overlap and band alignment. The recent emergence of van der Waals (vdW) magnets enables the possibility of tuning proximity effects via designing heterostructures with atomically clean interfaces. In particular, atomically thin CrI3 exhibits layered antiferromagnetism, where adjacent ferromagnetic monolayers are antiferromagnetically coupled. Exploiting this magnetic structure, we uncovered a layer-resolved magnetic proximity effect in heterostructures formed by monolayer WSe2 and bi/trilayer CrI3. By controlling the individual layer magnetization in CrI3 with a magnetic field, we found that the spin-dependent charge transfer between WSe2 and CrI3 is dominated by the interfacial CrI3 layer, while the proximity exchange field is highly sensitive to the layered magnetic structure as a whole. These properties enabled us to use monolayer WSe2 as a spatially sensitive magnetic sensor to map out layered antiferromagnetic domain structures at zero magnetic field as well as antiferromagnetic/ferromagnetic domains near the spin-flip transition in bilayer CrI3. Our work reveals a new way to control proximity effects and probe interfacial magnetic order via vdW engineering.
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Submitted 12 January, 2020;
originally announced January 2020.
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Valley Phonons and Exciton Complexes in a Monolayer Semiconductor
Authors:
Minhao He,
Pasqual Rivera,
Dinh Van Tuan,
Nathan P. Wilson,
Min Yang,
Takashi Taniguchi,
Kenji Watanabe,
Jiaqiang Yan,
David G. Mandrus,
Hongyi Yu,
Hanan Dery,
Wang Yao,
Xiaodong Xu
Abstract:
The coupling between spin, charge, and lattice degrees of freedom plays an important role in a wide range of fundamental phenomena. Monolayer semiconducting transitional metal dichalcogenides have emerged as an outstanding platform for studying these coupling effects because they possess unique spin-valley locking physics for hosting rich excitonic species and the reduced screening for strong Coul…
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The coupling between spin, charge, and lattice degrees of freedom plays an important role in a wide range of fundamental phenomena. Monolayer semiconducting transitional metal dichalcogenides have emerged as an outstanding platform for studying these coupling effects because they possess unique spin-valley locking physics for hosting rich excitonic species and the reduced screening for strong Coulomb interactions. Here, we report the observation of multiple valley phonons, phonons with momentum vectors pointing to the corners of the hexagonal Brillouin zone, and the resulting exciton complexes in the monolayer semiconductor WSe2. From Lande g-factor and polarization analyses of photoluminescence peaks, we find that these valley phonons lead to efficient intervalley scattering of quasi particles in both exciton formation and relaxation. This leads to a series of photoluminescence peaks as valley phonon replicas of dark trions. Using identified valley phonons, we also uncovered an intervalley exciton near charge neutrality, and extract its short-range electron-hole exchange interaction to be about 10 meV. Our work not only identifies a number of previously unknown 2D excitonic species, but also shows that monolayer WSe2 is a prime candidate for studying interactions between spin, pseudospin, and zone-edge phonons.
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Submitted 6 January, 2020;
originally announced January 2020.
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Visualizing electrostatic gating effects in two-dimensional heterostructures
Authors:
Paul V. Nguyen,
Natalie C. Teutsch,
Nathan P. Wilson,
Joshua Kahn,
Xue Xia,
Viktor Kandyba,
Alexei Barinov,
Gabriel Constantinescu,
Nicholas D. M. Hine,
Xiaodong Xu,
David H. Cobden,
Neil R. Wilson
Abstract:
The ability to directly observe electronic band structure in modern nanoscale field-effect devices could transform understanding of their physics and function. One could, for example, visualize local changes in the electrical and chemical potentials as a gate voltage is applied. One could also study intriguing physical phenomena such as electrically induced topological transitions and many-body sp…
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The ability to directly observe electronic band structure in modern nanoscale field-effect devices could transform understanding of their physics and function. One could, for example, visualize local changes in the electrical and chemical potentials as a gate voltage is applied. One could also study intriguing physical phenomena such as electrically induced topological transitions and many-body spectral reconstructions. Here we show that submicron angle-resolved photoemission (micro-ARPES) applied to two-dimensional (2D) van der Waals heterostructures affords this ability. In graphene devices, we observe a shift of the chemical potential by 0.6 eV across the Dirac point as a gate voltage is applied. In several 2D semiconductors we see the conduction band edge appear as electrons accumulate, establishing its energy and momentum, and observe significant band-gap renormalization at low densities. We also show that micro-ARPES and optical spectroscopy can be applied to a single device, allowing rigorous study of the relationship between gate-controlled electronic and excitonic properties.
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Submitted 15 April, 2019;
originally announced April 2019.
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Atomically Thin CrCl3: An in-Plane Layered Antiferromagnetic Insulator
Authors:
Xinghan Cai,
Tiancheng Song,
Nathan P. Wilson,
Genevieve Clark,
Minhao He,
Xiaoou Zhang,
Takashi Taniguchi,
Kenji Watanabe,
Wang Yao,
Di Xiao,
Michael A. McGuire,
David H. Cobden,
Xiaodong Xu
Abstract:
The recent discovery of magnetism in atomically thin layers of van der Waals (vdW) crystals has created new opportunities for exploring magnetic phenomena in the two-dimensional (2D) limit. In most 2D magnets studied to date the c-axis is an easy axis, so that at zero applied field the polarization of each layer is perpendicular to the plane. Here, we demonstrate that atomically thin CrCl3 is a la…
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The recent discovery of magnetism in atomically thin layers of van der Waals (vdW) crystals has created new opportunities for exploring magnetic phenomena in the two-dimensional (2D) limit. In most 2D magnets studied to date the c-axis is an easy axis, so that at zero applied field the polarization of each layer is perpendicular to the plane. Here, we demonstrate that atomically thin CrCl3 is a layered antiferromagnetic insulator with an easy-plane normal to the c-axis, that is the polarization is in the plane of each layer and has no preferred direction within it. Ligand field photoluminescence at 870 nm is observed down to the monolayer limit, demonstrating its insulating properties. We investigate the in-plane magnetic order using tunneling magnetoresistance in graphene/CrCl3/graphene tunnel junctions, establishing that the interlayer coupling is antiferromagnetic down to the bilayer. From the temperature dependence of the magnetoresistance we obtain an effective magnetic phase diagram for the bilayer. Our result shows that CrCl3 should be useful for studying the physics of 2D phase transitions and for making new kinds of vdW spintronic devices.
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Submitted 30 March, 2019;
originally announced April 2019.
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Signatures of moiré-trapped valley excitons in MoSe$_2$/WSe$_2$ heterobilayers
Authors:
Kyle L. Seyler,
Pasqual Rivera,
Hongyi Yu,
Nathan P. Wilson,
Essance L. Ray,
David Mandrus,
Jiaqiang Yan,
Wang Yao,
Xiaodong Xu
Abstract:
The creation of moiré patterns in crystalline solids is a powerful approach to manipulate their electronic properties, which are fundamentally influenced by periodic potential landscapes. In 2D materials, a moiré pattern with a superlattice potential can form by vertically stacking two layered materials with a twist and/or finite lattice constant difference. This unique approach has led to emergen…
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The creation of moiré patterns in crystalline solids is a powerful approach to manipulate their electronic properties, which are fundamentally influenced by periodic potential landscapes. In 2D materials, a moiré pattern with a superlattice potential can form by vertically stacking two layered materials with a twist and/or finite lattice constant difference. This unique approach has led to emergent electronic phenomena, including the fractal quantum Hall effect, tunable Mott insulators, and unconventional superconductivity. Furthermore, theory predicts intriguing effects on optical excitations by a moiré potential in 2D valley semiconductors, but these signatures have yet to be experimentally detected. Here, we report experimental evidence of interlayer valley excitons trapped in a moiré potential in MoSe$_2$/WSe$_2$ heterobilayers. At low temperatures, we observe photoluminescence near the free interlayer exciton energy but with over 100 times narrower linewidths. The emitter g-factors are homogeneous across the same sample and only take two values, -15.9 and 6.7, in samples with twisting angles near 60° and 0°, respectively. The g-factors match those of the free interlayer exciton, which is determined by one of two possible valley pairing configurations. At a twist angle near 20°, the emitters become two orders of magnitude dimmer, but remarkably, they possess the same g-factor as the heterobilayer near 60°. This is consistent with the Umklapp recombination of interlayer excitons near the commensurate 21.8° twist angle. The emitters exhibit strong circular polarization, which implies the preservation of three-fold rotation symmetry by the trap** potential. Together with the power and excitation energy dependence, all evidence points to their origin as interlayer excitons trapped in a smooth moiré potential with inherited valley-contrasting physics.
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Submitted 12 September, 2018;
originally announced September 2018.
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Detection of thermodynamic "valley noise" in monolayer semiconductors: access to intrinsic valley relaxation timescales
Authors:
M. Goryca,
N. P. Wilson,
P. Dey,
X. Xu,
S. A. Crooker
Abstract:
Together with charge and spin degrees of freedom, many new 2D materials also permit information to be encoded in an electron's valley degree of freedom - that is, in particular momentum states in the material's Brillouin zone. With a view towards future generations of valley-based (opto)electronic technologies, the intrinsic timescales of scattering and relaxation between valleys therefore represe…
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Together with charge and spin degrees of freedom, many new 2D materials also permit information to be encoded in an electron's valley degree of freedom - that is, in particular momentum states in the material's Brillouin zone. With a view towards future generations of valley-based (opto)electronic technologies, the intrinsic timescales of scattering and relaxation between valleys therefore represent fundamental parameters of interest. Here we introduce and demonstrate an entirely passive, noise-based approach for exploring intrinsic valley dynamics in atomically-thin transition-metal dichalcogenide (TMD) semiconductors. Exploiting the valley-specific optical selection rules in monolayer TMDs, we use optical Faraday rotation to detect, under conditions of strict thermal equilibrium, the stochastic thermodynamic fluctuations of the valley polarization in a Fermi sea of resident carriers. Frequency spectra of this spontaneous "valley noise" reveal narrow Lorentzian lineshapes and therefore long exponentially-decaying intrinsic valley relaxation. Moreover, the valley noise signals are shown to validate both the relaxation times and the spectral dependence of conventional (perturbative) pump-probe measurements. These results provide a viable route toward quantitative measurements of intrinsic valley dynamics, free from any external perturbation, pum**, or excitation.
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Submitted 3 August, 2018;
originally announced August 2018.
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Valley Manipulation by Optically Tuning the Magnetic Proximity Effect in WSe$_2$/CrI$_3$ Heterostructures
Authors:
Kyle L. Seyler,
Ding Zhong,
Bevin Huang,
Xiayu Linpeng,
Nathan P. Wilson,
Takashi Taniguchi,
Kenji Watanabe,
Wang Yao,
Di Xiao,
Michael A. McGuire,
Kai-Mei C. Fu,
Xiaodong Xu
Abstract:
Monolayer valley semiconductors, such as tungsten diselenide (WSe$_2$), possess valley pseudospin degrees of freedom that are optically addressable but degenerate in energy. Lifting the energy degeneracy by breaking time-reversal symmetry is vital for valley manipulation. This has been realized by directly applying magnetic fields or via pseudo-magnetic fields generated by intense circularly polar…
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Monolayer valley semiconductors, such as tungsten diselenide (WSe$_2$), possess valley pseudospin degrees of freedom that are optically addressable but degenerate in energy. Lifting the energy degeneracy by breaking time-reversal symmetry is vital for valley manipulation. This has been realized by directly applying magnetic fields or via pseudo-magnetic fields generated by intense circularly polarized optical pulses. However, swee** large magnetic fields is impractical for devices, and the pseudo-magnetic fields are only effective in the presence of ultrafast laser pulses. The recent rise of two-dimensional (2D) magnets unlocks new approaches to control valley physics via van der Waals heterostructure engineering. Here we demonstrate wide continuous tuning of the valley polarization and valley Zeeman splitting with small changes in the laser excitation power in heterostructures formed by monolayer WSe$_2$ and 2D magnetic chromium triiodide (CrI$_3$). The valley manipulation is realized via optical control of the CrI$_3$magnetization, which tunes the magnetic exchange field over a range of 20 T. Our results reveal a convenient new path towards optical control of valley pseudospins and van der Waals magnetic heterostructures.
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Submitted 22 May, 2018;
originally announced May 2018.
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Giant Tunneling Magnetoresistance in Spin-Filter van der Waals Heterostructures
Authors:
Tiancheng Song,
Xinghan Cai,
Matisse Wei-Yuan Tu,
Xiaoou Zhang,
Bevin Huang,
Nathan P. Wilson,
Kyle L. Seyler,
Lin Zhu,
Takashi Taniguchi,
Kenji Watanabe,
Michael A. McGuire,
David H. Cobden,
Di Xiao,
Wang Yao,
Xiaodong Xu
Abstract:
Magnetic multilayer devices that exploit magnetoresistance are the backbone of magnetic sensing and data storage technologies. Here we report novel multiple-spin-filter magnetic tunnel junctions (sf-MTJs) based on van der Waals (vdW) heterostructures in which atomically thin chromium triiodide (CrI3) acts as a spin-filter tunnel barrier sandwiched between graphene contacts. We demonstrate tunnelin…
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Magnetic multilayer devices that exploit magnetoresistance are the backbone of magnetic sensing and data storage technologies. Here we report novel multiple-spin-filter magnetic tunnel junctions (sf-MTJs) based on van der Waals (vdW) heterostructures in which atomically thin chromium triiodide (CrI3) acts as a spin-filter tunnel barrier sandwiched between graphene contacts. We demonstrate tunneling magnetoresistance which is drastically enhanced with increasing CrI3 layer thickness, reaching a record 19,000% for magnetic multilayer structures using four-layer sf-MTJs at low temperatures. These devices also show multiple resistance states as a function of magnetic field, suggesting the potential for multi-bit functionalities using an individual vdW sf-MTJ. Using magnetic circular dichroism measurements, we attribute these effects to the intrinsic layer-by-layer antiferromagnetic ordering of the atomically thin CrI3. Our work reveals the possibility to push magnetic information storage to the atomically thin limit, and highlights CrI3 as a superlative magnetic tunnel barrier for vdW heterostructure spintronic devices.
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Submitted 26 January, 2018;
originally announced January 2018.
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Magneto-Optics of Exciton Rydberg States in a Monolayer Semiconductor
Authors:
Andreas V. Stier,
Nathan P. Wilson,
Kirill A. Velizhanin,
Junichiro Kono,
Xiaodong Xu,
Scott A. Crooker
Abstract:
We report 65 tesla magneto-absorption spectroscopy of exciton Rydberg states in the archetypal monolayer semiconductor WSe$_2$. The strongly field-dependent and distinct energy shifts of the 2s, 3s, and 4s excited neutral excitons permits their unambiguous identification and allows for quantitative comparison with leading theoretical models. Both the sizes (via low-field diamagnetic shifts) and th…
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We report 65 tesla magneto-absorption spectroscopy of exciton Rydberg states in the archetypal monolayer semiconductor WSe$_2$. The strongly field-dependent and distinct energy shifts of the 2s, 3s, and 4s excited neutral excitons permits their unambiguous identification and allows for quantitative comparison with leading theoretical models. Both the sizes (via low-field diamagnetic shifts) and the energies of the $ns$ exciton states agree remarkably well with detailed numerical simulations using the non-hydrogenic screened Keldysh potential for 2D semiconductors. Moreover, at the highest magnetic fields the nearly-linear diamagnetic shifts of the weakly-bound 3s and 4s excitons provide a direct experimental measure of the exciton's reduced mass, $m_r = 0.20 \pm 0.01~m_0$.
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Submitted 25 January, 2018; v1 submitted 31 August, 2017;
originally announced September 2017.
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Probing the influence of dielectric environment on excitons in monolayer WSe2: Insight from high magnetic fields
Authors:
Andreas V. Stier,
Nathan P. Wilson,
Genevieve Clark,
Xiaodong Xu,
Scott A. Crooker
Abstract:
Excitons in atomically-thin semiconductors necessarily lie close to a surface, and therefore their properties are expected to be strongly influenced by the surrounding dielectric environment. However, systematic studies exploring this role are challenging, in part because the most readily accessible exciton parameter -- the exciton's optical transition energy -- is largely \textit{un}affected by t…
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Excitons in atomically-thin semiconductors necessarily lie close to a surface, and therefore their properties are expected to be strongly influenced by the surrounding dielectric environment. However, systematic studies exploring this role are challenging, in part because the most readily accessible exciton parameter -- the exciton's optical transition energy -- is largely \textit{un}affected by the surrounding medium. Here we show that the role of the dielectric environment is revealed through its systematic influence on the \textit{size} of the exciton, which can be directly measured via the diamagnetic shift of the exciton transition in high magnetic fields. Using exfoliated WSe$_2$ monolayers affixed to single-mode optical fibers, we tune the surrounding dielectric environment by encapsulating the flakes with different materials, and perform polarized low-temperature magneto-absorption studies to 65~T. The systematic increase of the exciton's size with dielectric screening, and concurrent reduction in binding energy (also inferred from these measurements), is quantitatively compared with leading theoretical models. These results demonstrate how exciton properties can be tuned in future 2D optoelectronic devices.
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Submitted 17 August, 2016;
originally announced August 2016.
