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A corner reflector of graphene Dirac fermions as a phonon-scattering sensor
Authors:
H. Graef,
Q. Wilmart,
M. Rosticher,
D. Mele,
L. Banszerus,
C. Stampfer,
T. Taniguchi,
K. Watanabe,
J-M. Berroir,
E. Bocquillon,
G. Fève,
E. H. T. Teo,
B. Plaçais
Abstract:
Dirac fermion optics exploits the refraction of chiral fermions across optics-inspired Klein-tunneling barriers defined by high-transparency p-n junctions. We consider the corner reflector (CR) geometry introduced in optics or radars. We fabricate Dirac fermion CRs using bottom-gate-defined barriers in hBN-encapsulated graphene. By suppressing transmission upon multiple internal reflections, CRs a…
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Dirac fermion optics exploits the refraction of chiral fermions across optics-inspired Klein-tunneling barriers defined by high-transparency p-n junctions. We consider the corner reflector (CR) geometry introduced in optics or radars. We fabricate Dirac fermion CRs using bottom-gate-defined barriers in hBN-encapsulated graphene. By suppressing transmission upon multiple internal reflections, CRs are sensitive to minute phonon scattering rates. We report on do**-independent CR transmission in quantitative agreement with a simple scattering model including thermal phonon scattering. As a new signature of CRs, we observe Fabry-Pérot oscillations at low temperature, consistent with single-path reflections. Finally, we demonstrate high-frequency operation which promotes CRs as fast phonon detectors. Our work establishes the relevance of Dirac fermion optics in graphene and opens a route for its implementation in topological Dirac matter.
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Submitted 8 January, 2019;
originally announced January 2019.
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Onset of optical-phonon cooling in multilayer graphene revealed by RF noise and black-body radiation thermometries
Authors:
D. Brunel,
S. Berthou,
R. Parret,
F. Vialla,
P. Morfin,
Q. Wilmart,
G. Fève,
J. -M. Berroir,
P. Roussignol,
C. Voisin,
B. Plaçais
Abstract:
We report on electron cooling power measurements in few-layer graphene excited by Joule heating by means of a new setup combining electrical and optical probes of the electron and phonon baths temperatures. At low bias, noise thermometry allows us to retrieve the well known acoustic phonon cooling regimes below and above the Bloch Grüneisen temperature, with additional control over the phonon bath…
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We report on electron cooling power measurements in few-layer graphene excited by Joule heating by means of a new setup combining electrical and optical probes of the electron and phonon baths temperatures. At low bias, noise thermometry allows us to retrieve the well known acoustic phonon cooling regimes below and above the Bloch Grüneisen temperature, with additional control over the phonon bath temperature. At high electrical bias, we show the relevance of direct optical investigation of the electronic temperature by means of black-body radiation measurements that provide higher accuracy than noise thermometry. In this regime, the onset of new efficient relaxation pathways involving optical modes is observed
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Submitted 29 April, 2018;
originally announced April 2018.
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Contact gating at GHz frequency in graphene
Authors:
Q. Wilmart,
A. Inhofer,
M. Boukhicha,
W. Yang,
M. Rosticher,
P. Morfin,
N. Garroum,
G. Fève,
J. -M. Berroir,
B. Plaçais
Abstract:
The paradigm of graphene transistors is based on the gate modulation of the channel carrier density by means of a local channel gate. This standard architecture is subject to the scaling limit of the channel length and further restrictions due to access and contact resistances impeding the device performance. We propose a novel design, overcoming these issues by implementing additional local gates…
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The paradigm of graphene transistors is based on the gate modulation of the channel carrier density by means of a local channel gate. This standard architecture is subject to the scaling limit of the channel length and further restrictions due to access and contact resistances impeding the device performance. We propose a novel design, overcoming these issues by implementing additional local gates underneath the contact region which allow a full control of the Klein barrier taking place at the contact edge. In particular, our work demonstrates the GHz operation of transistors driven by independent contact gates. We benchmark the standard channel and novel contact gating and report for the later dynamical transconductance levels at the state of the art. Our finding may find applications in electronics and optoelectronics whenever there is need to control independently the Fermi level and the electrostatic potential of electronic sources or to get rid of cumbersome local channel gates.
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Submitted 29 April, 2018;
originally announced April 2018.
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Dirac fermion reflector by ballistic graphene sawtooth-shaped npn junctions
Authors:
Sei Morikawa,
Quentin Wilmart,
Satoru Masubuchi,
Kenji Watanabe,
Takashi Taniguchi,
Bernard Plaçais,
Tomoki Machida
Abstract:
We have realized a Dirac fermion reflector in graphene by controlling the ballistic carrier trajectory in a sawtooth-shaped npn junction. When the carrier density in the inner p-region is much larger than that in the outer n-regions, the first straight np interface works as a collimator and the collimated ballistic carriers can be totally reflected at the second zigzag pn interface. We observed cl…
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We have realized a Dirac fermion reflector in graphene by controlling the ballistic carrier trajectory in a sawtooth-shaped npn junction. When the carrier density in the inner p-region is much larger than that in the outer n-regions, the first straight np interface works as a collimator and the collimated ballistic carriers can be totally reflected at the second zigzag pn interface. We observed clear resistance enhancement around the np+n regime, which is in good agreement with the numerical simulation. The tunable reflectance of ballistic carriers could be an elementary and important step for realizing ultrahigh-mobility graphene field effect transistors utilizing Dirac fermion optics in the near future.
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Submitted 13 February, 2017;
originally announced February 2017.
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A graphene Zener-Klein transistor cooled by a hyperbolic substrate
Authors:
W. Yang,
S. Berthou,
X. Lu,
Q. Wilmart,
A. Denis,
M. Rosticher,
T. Taniguchi,
K. Watanabe,
G. Feve,
J. M. Berroir,
G. Zhang,
C. Voisin,
E. Baudin,
B. Plaçais
Abstract:
Engineering of cooling mechanisms is a bottleneck in nanoelectronics. Whereas thermal exchanges in diffusive graphene are mostly driven by defect assisted acoustic phonon scattering, the case of high-mobility graphene on hexagonal Boron Nitride (hBN) is radically different with a prominent contribution of remote phonons from the substrate. A bi-layer graphene on hBN transistor with local gate is d…
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Engineering of cooling mechanisms is a bottleneck in nanoelectronics. Whereas thermal exchanges in diffusive graphene are mostly driven by defect assisted acoustic phonon scattering, the case of high-mobility graphene on hexagonal Boron Nitride (hBN) is radically different with a prominent contribution of remote phonons from the substrate. A bi-layer graphene on hBN transistor with local gate is driven in a regime where almost perfect current saturation is achieved by compensation of the decrease of the carrier density and Zener-Klein tunneling (ZKT) at high bias. Using noise thermometry, we show that this Zener-Klein tunneling triggers a new cooling pathway due to the emission of hyperbolic phonon polaritons (HPP) in hBN by out-of-equilibrium electron-hole pairs beyond the super-Planckian regime. The combination of ZKT-transport and HPP-cooling promotes graphene on BN transistors as a valuable nanotechnology for power devices and RF electronics.
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Submitted 25 April, 2018; v1 submitted 9 February, 2017;
originally announced February 2017.
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Klein-tunneling transistor with ballistic graphene
Authors:
Quentin Wilmart,
Salim Berada,
David Torrin,
V. Hung Nguyen,
Gwendal Fève,
Jean-Marc Berroir,
Philippe Dollfus,
Bernard Plaçais
Abstract:
Today the availability of high mobility graphene up to room temperature makes ballistic transport in nanodevices achievable. In particular, p-n-p transistor in the ballistic regime gives access to the Klein tunneling physics and allows the realization of devices exploiting the optics-like behavior of Dirac Fermions (DF) as in the Vesalego lens or the Fabry Pérot cavity. Here we propose a Klein tun…
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Today the availability of high mobility graphene up to room temperature makes ballistic transport in nanodevices achievable. In particular, p-n-p transistor in the ballistic regime gives access to the Klein tunneling physics and allows the realization of devices exploiting the optics-like behavior of Dirac Fermions (DF) as in the Vesalego lens or the Fabry Pérot cavity. Here we propose a Klein tunneling transistor based on geometrical optics of DF. We consider the case of a prismatic active region delimited by a triangular gate, where total internal reflection may occur, which leads to the tunable suppression of the transistor transmission. We calculate the transmission and the current by means of scattering theory and the finite bias properties using Non Equilibrium Green's Function(NEGF) simulation.
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Submitted 22 September, 2014;
originally announced September 2014.
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Thermionic charge transport in CMOS nano-transistors
Authors:
A. C. Betz,
S. Barraud,
Q. Wilmart,
B. Plaçais,
X. Jehl,
M. Sanquer,
M. F. Gonzalez - Zalba
Abstract:
We report on DC and microwave electrical transport measurements in silicon-on-insulator CMOS nano-transistors at low and room temperature. At low source-drain voltage, the DC current and RF response show signs of conductance quantization. We attribute this to Coulomb blockade resulting from barriers formed at the spacer-gate interfaces. We show that at high bias transport occurs thermionically ove…
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We report on DC and microwave electrical transport measurements in silicon-on-insulator CMOS nano-transistors at low and room temperature. At low source-drain voltage, the DC current and RF response show signs of conductance quantization. We attribute this to Coulomb blockade resulting from barriers formed at the spacer-gate interfaces. We show that at high bias transport occurs thermionically over the highest barrier: Transconductance traces obtained from microwave scattering-parameter measurements at liquid helium and room temperature is accurately fitted by a thermionic model. From the fits we deduce the ratio of gate capacitance and quantum capacitance, as well as the electron temperature.
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Submitted 10 December, 2013;
originally announced December 2013.
