Showing 1–39 of 39 results for author: Williams, E D

Concrete Safety for ML Problems: System Safety for ML Development and Assessment

Authors: Edgar W. Jatho, Logan O. Mailloux, Eugene D. Williams, Patrick McClure, Joshua A. Kroll

Abstract: Many stakeholders struggle to make reliances on ML-driven systems due to the risk of harm these systems may cause. Concerns of trustworthiness, unintended social harms, and unacceptable social and ethical violations undermine the promise of ML advancements. Moreover, such risks in complex ML-driven systems present a special challenge as they are often difficult to foresee, arising over periods of… ▽ More Many stakeholders struggle to make reliances on ML-driven systems due to the risk of harm these systems may cause. Concerns of trustworthiness, unintended social harms, and unacceptable social and ethical violations undermine the promise of ML advancements. Moreover, such risks in complex ML-driven systems present a special challenge as they are often difficult to foresee, arising over periods of time, across populations, and at scale. These risks often arise not from poor ML development decisions or low performance directly but rather emerge through the interactions amongst ML development choices, the context of model use, environmental factors, and the effects of a model on its target. Systems safety engineering is an established discipline with a proven track record of identifying and managing risks even in high-complexity sociotechnical systems. In this work, we apply a state-of-the-art systems safety approach to concrete applications of ML with notable social and ethical risks to demonstrate a systematic means for meeting the assurance requirements needed to argue for safe and trustworthy ML in sociotechnical systems. △ Less

Submitted 6 February, 2023; originally announced February 2023.

Comments: arXiv admin note: text overlap with arXiv:2211.04602

System Safety Engineering for Social and Ethical ML Risks: A Case Study

Authors: Edgar W. Jatho III, Logan O. Mailloux, Shalaleh Rismani, Eugene D. Williams, Joshua A. Kroll

Abstract: Governments, industry, and academia have undertaken efforts to identify and mitigate harms in ML-driven systems, with a particular focus on social and ethical risks of ML components in complex sociotechnical systems. However, existing approaches are largely disjointed, ad-hoc and of unknown effectiveness. Systems safety engineering is a well established discipline with a track record of identifyin… ▽ More Governments, industry, and academia have undertaken efforts to identify and mitigate harms in ML-driven systems, with a particular focus on social and ethical risks of ML components in complex sociotechnical systems. However, existing approaches are largely disjointed, ad-hoc and of unknown effectiveness. Systems safety engineering is a well established discipline with a track record of identifying and managing risks in many complex sociotechnical domains. We adopt the natural hypothesis that tools from this domain could serve to enhance risk analyses of ML in its context of use. To test this hypothesis, we apply a "best of breed" systems safety analysis, Systems Theoretic Process Analysis (STPA), to a specific high-consequence system with an important ML-driven component, namely the Prescription Drug Monitoring Programs (PDMPs) operated by many US States, several of which rely on an ML-derived risk score. We focus in particular on how this analysis can extend to identifying social and ethical risks and develo** concrete design-level controls to mitigate them. △ Less

Submitted 8 November, 2022; originally announced November 2022.

Comments: 14 pages, 5 figures, 3 tables. Accepted to 36th Conference on Neural Information Processing Systems, Workshop on ML Safety (NeurIPS 2022)

Exclusion zone phenomena in water -- a critical review of experimental findings and theories

Authors: Daniel C. Elton, Peter D. Spencer, James D. Riches, Elizabeth D. Williams

Abstract: The existence of the exclusion zone (EZ), a layer of water in which plastic microspheres are repelled from hydrophilic surfaces, has now been independently demonstrated by several groups. A better understanding of the mechanisms which generate EZs would help with understanding the possible importance of EZs in biology and in engineering applications such as filtration and microfluidics. Here we re… ▽ More The existence of the exclusion zone (EZ), a layer of water in which plastic microspheres are repelled from hydrophilic surfaces, has now been independently demonstrated by several groups. A better understanding of the mechanisms which generate EZs would help with understanding the possible importance of EZs in biology and in engineering applications such as filtration and microfluidics. Here we review the experimental evidence for EZ phenomena in water and the major theories that have been proposed. We review experimental results from birefringence, neutron radiography, nuclear magnetic resonance, and other studies. Pollack and others have theorized that water in the EZ exists has a different structure than bulk water, and that this accounts for the EZ. We present several alternative explanations for EZs and argue that Schurr's theory based on diffusiophoresis presents a compelling alternative explanation for the core EZ phenomenon. Among other things, Schurr's theory makes predictions about the growth of the EZ with time which have been confirmed by Florea et al. and others. We also touch on several possible confounding factors that make experimentation on EZs difficult, such as charged surface groups, dissolved solutes, and adsorbed nanobubbles. △ Less

Submitted 30 June, 2020; v1 submitted 15 September, 2019; originally announced September 2019.

Comments: 14 pgs

Journal ref: Int. J. Mol. Sci. 21(14), 5041, 2020

Transfer Printing Approach to All-Carbon Nanoelectronics

Authors: V. K. Sangwan, A. Southard, T. L. Moore, V. W. Ballarotto, D. R. Hines, M. S. Fuhrer, E. D. Williams

Abstract: Transfer printing methods are used to pattern and assemble monolithic carbon nanotube (CNT) thin-film transistors on large-area transparent, flexible substrates. Airbrushed CNT thin-films with sheet resistance 1kOhmsquare^{-1} at 80% transparency were used as electrodes, and high quality chemical vapor deposition (CVD)-grown CNT networks were used as the semiconductor component. Transfer printing… ▽ More Transfer printing methods are used to pattern and assemble monolithic carbon nanotube (CNT) thin-film transistors on large-area transparent, flexible substrates. Airbrushed CNT thin-films with sheet resistance 1kOhmsquare^{-1} at 80% transparency were used as electrodes, and high quality chemical vapor deposition (CVD)-grown CNT networks were used as the semiconductor component. Transfer printing was used to pre-pattern and assemble thin film transistors on polyethylene terephthalate (PET) substrates which incorporated Al_{2}O_{3}/poly-methylmethacrylate (PMMA) dielectric bi-layer. CNT-based ambipolar devices exhibit field-effect mobility in range 1 - 33 cm^{2}/Vs and on/off ratio ~10^{3}, comparable to the control devices fabricated using Au as the electrode material. △ Less

Submitted 14 November, 2010; originally announced November 2010.

Comments: 17 pages, 4 figures

High-fidelity conformation of graphene to SiO2 topographic features

Authors: William G. Cullen, Mahito Yamamoto, Kristen M. Burson, Jianhao Chen, Chaun Jang, Liang Li, Michael S. Fuhrer, Ellen D. Williams

Abstract: Strain engineering of graphene through interaction with a patterned substrate offers the possibility of tailoring its electronic properties, but will require detailed understanding of how graphene's morphology is determined by the underlying substrate. However, previous experimental reports have drawn conflicting conclusions about the structure of graphene on SiO2. Here we show that high-resolutio… ▽ More Strain engineering of graphene through interaction with a patterned substrate offers the possibility of tailoring its electronic properties, but will require detailed understanding of how graphene's morphology is determined by the underlying substrate. However, previous experimental reports have drawn conflicting conclusions about the structure of graphene on SiO2. Here we show that high-resolution non-contact atomic force microscopy of SiO2 reveals roughness at the few-nm length scale unresolved in previous measurements, and scanning tunneling microscopy of graphene on SiO2 shows it to be slightly smoother than the supporting SiO2 substrate. Quantitative analysis of the competition between bending rigidity of the graphene and adhesion to the substrate explains the observed roughness of monolayer graphene on SiO2 as extrinsic, and provides a natural, intuitive description in terms of highly conformal adhesion. The analysis indicates that graphene adopts the conformation of the underlying substrate down to the smallest features with nearly 99% fidelity. △ Less

Submitted 27 July, 2010; originally announced July 2010.

Comments: 13 pages, 3 figures plus supplemental information

Optimizing Transistor Performance of Percolating Carbon Nanotube Networks

Authors: V. K. Sangwan, A. Behnam, V. W. Ballarotto, M. S. Fuhrer, A. Ural, E. D. Williams

Abstract: In percolating networks of mixed metallic and semiconducting CNTs, there is a tradeoff between high on-current (dense networks) and high on/off ratio (sparse networks in which the metallic CNT fraction is not percolating). Experiments on devices in a transistor configuration and Monte Carlo simulations were performed to determine the scaling behavior of device resistivity as a function of channel… ▽ More In percolating networks of mixed metallic and semiconducting CNTs, there is a tradeoff between high on-current (dense networks) and high on/off ratio (sparse networks in which the metallic CNT fraction is not percolating). Experiments on devices in a transistor configuration and Monte Carlo simulations were performed to determine the scaling behavior of device resistivity as a function of channel length (L) for CNT density p in the range 0.04 - 1.29 CNT/μm^2 in the on- and off-states. Optimized devices with field-effect mobility up to 50 cm^2/Vs at on/off ratio > 10^3 were obtained at W = 50 μm, L > 70 μm for p = 0.54 - 0.81 CNTs/μm^2. △ Less

Submitted 22 April, 2010; originally announced April 2010.

Tunable Kondo Effect in Graphene with Defects

Authors: Jian-Hao Chen, W. G. Cullen, E. D. Williams, M. S. Fuhrer

Abstract: Graphene is a model system for the study of electrons confined to a strictly two-dimensional layer1 and a large number of electronic phenomena have been demonstrated in graphene, from the fractional2, 3 quantum Hall effect to superconductivity4. However, the coupling of conduction electrons to local magnetic moments5, 6, a central problem of condensed matter physics, has not been realized in graph… ▽ More Graphene is a model system for the study of electrons confined to a strictly two-dimensional layer1 and a large number of electronic phenomena have been demonstrated in graphene, from the fractional2, 3 quantum Hall effect to superconductivity4. However, the coupling of conduction electrons to local magnetic moments5, 6, a central problem of condensed matter physics, has not been realized in graphene, and, given carbon's lack of d or f electrons, magnetism in graphene would seem unlikely. Nonetheless, magnetism in graphitic carbon in the absence of transition-metal elements has been reported7-10, with explanations ranging from lattice defects11 to edge structures12, 13 to negative curvature regions of the graphene sheet14. Recent experiments suggest that correlated defects in highly-ordered pyrolytic graphite (HOPG) induced by proton irradiation9 or native to grain boundaries7, can give rise to ferromagnetism. Here we show that point defects (vacancies) in graphene15 are local moments which interact strongly with the conduction electrons through the Kondo effect6, 16-18 providing strong evidence that defects in graphene are indeed magnetic. The Kondo temperature TK is tunable with carrier density from 30-90 K; the high TK is a direct consequence of strong coupling of defects to conduction electrons in a Dirac material18. The results indicate that defect engineering in graphene could be used to generate and control carrier-mediated magnetism, and realize all-carbon spintronic devices. Furthermore, graphene should be an ideal system in which to probe Kondo physics in a widely tunable electron system. △ Less

Submitted 4 March, 2011; v1 submitted 20 April, 2010; originally announced April 2010.

Comments: 22 pages, 7 figures (4 in main text, 3 in supplementary information), to appear in Nature Physics

Controlled Growth, Patterning and Placement of Carbon Nanotube Thin Films

Authors: V. K. Sangwan, V. W. Ballarotto, D. R. Hines, M. S. Fuhrer, E. D. Williams

Abstract: Controlled growth, patterning and placement of carbon nanotube (CNT) thin films for electronic applications are demonstrated. The density of CNT films is controlled by optimizing the feed gas composition as well as the concentration of growth catalyst in a chemical vapor deposition process. Densities of CNTs ranging from 0.02 CNTs/μm^2 to 1.29 CNTs/μm^2 are obtained. The resulting pristine CNT t… ▽ More Controlled growth, patterning and placement of carbon nanotube (CNT) thin films for electronic applications are demonstrated. The density of CNT films is controlled by optimizing the feed gas composition as well as the concentration of growth catalyst in a chemical vapor deposition process. Densities of CNTs ranging from 0.02 CNTs/μm^2 to 1.29 CNTs/μm^2 are obtained. The resulting pristine CNT thin films are then successfully patterned using either pre-growth or post-growth techniques. By develo** a layered photoresist process that is compatible with ferric nitrate catalyst, significant improvements over popular pre-growth patterning methods are obtained. Limitations of traditional post-growth patterning methods are circumvented by selective transfer printing of CNTs with either thermoplastic or metallic stamps. Resulting as-grown patterns of CNT thin films have edge roughness (< 1 μm) and resolution (< 5 μm) comparable to standard photolithography. Bottom gate CNT thin film devices are fabricated with field-effect mobilities up to 20 cm^2/Vs and on/off ratios of the order of 10^3. The patterning and transfer printing methods discussed here have a potential to be generalized to include other nanomaterials in new device configurations. △ Less

Submitted 19 April, 2010; originally announced April 2010.

Facile fabrication of suspended as-grown carbon nanotube devices

Authors: V. K. Sangwan, V. W. Ballarotto, M. S. Fuhrer, E. D. Williams

Abstract: A simple scalable scheme is reported for fabricating suspended carbon nanotube field effect transistors (CNT-FETs) without exposing pristine as-grown carbon nanotubes to subsequent chemical processing. Versatility and ease of the technique is demonstrated by controlling the density of suspended nanotubes and reproducing devices multiple times on the same electrode set. Suspending the carbon nano… ▽ More A simple scalable scheme is reported for fabricating suspended carbon nanotube field effect transistors (CNT-FETs) without exposing pristine as-grown carbon nanotubes to subsequent chemical processing. Versatility and ease of the technique is demonstrated by controlling the density of suspended nanotubes and reproducing devices multiple times on the same electrode set. Suspending the carbon nanotubes results in ambipolar transport behavior with negligible hysteresis. The Hooges constant of the suspended CNT-FETs (2.6 x 10-3) is about 20 times lower than for control CNT-FETs on SiO2 (5.6 x 10-2). △ Less

Submitted 20 September, 2009; originally announced September 2009.

Comments: 15 pages, 4 figures

Journal ref: V. K. Sangwan, V. W. Ballarotto, M. S. Fuhrer, and E. D. Williams, "Facile fabrication of suspended as-grown carbon nanotube devices," Applied Physics Letters 93 (11) (2008)

Charged impurity scattering in bilayer graphene

Authors: Shudong Xiao, Jian-Hao Chen, Shaffique Adam, Ellen D. Williams, Michael S. Fuhrer

Abstract: We have examined the impact of charged impurity scattering on charge carrier transport in bilayer graphene (BLG) by deposition of potassium in ultra-high vacuum at low temperature. Charged impurity scattering gives a conductivity which is supra-linear in carrier density, with a magnitude similar to single-layer graphene for the measured range of carrier densities of 2-4 x 10^12 cm^-2. Upon addit… ▽ More We have examined the impact of charged impurity scattering on charge carrier transport in bilayer graphene (BLG) by deposition of potassium in ultra-high vacuum at low temperature. Charged impurity scattering gives a conductivity which is supra-linear in carrier density, with a magnitude similar to single-layer graphene for the measured range of carrier densities of 2-4 x 10^12 cm^-2. Upon addition of charged impurities of concentration n_imp, the minimum conductivity Sigma_min decreases proportional to n_imp^-1/2, while the electron and hole puddle carrier density increases proportional to n_imp^1/2. These results for the intentional deposition of potassium on BLG are in good agreement with theoretical predictions for charged impurity scattering. However, our results also suggest that charged impurity scattering alone cannot explain the observed transport properties of pristine BLG on SiO2 before potassium do**. △ Less

Submitted 13 December, 2009; v1 submitted 10 August, 2009; originally announced August 2009.

Journal ref: Phys. Rev. B 82, 041406 (2010)

Characterizing Voltage Contrast in Photoelectron Emission Microscopy

Authors: Vinod K. Sangwan, Vincent W. Ballarotto, Karen Siegrist, Ellen D. Williams

Abstract: A non-destructive technique for obtaining voltage contrast information with photoelectron emission microscopy (PEEM) is described. Samples consisting of electrically isolated metal lines were used to quantify voltage contrast in PEEM. The voltage contrast behavior is characterized by comparing measured voltage contrast with calculated voltage contrast from two electrostatic models. Measured volt… ▽ More A non-destructive technique for obtaining voltage contrast information with photoelectron emission microscopy (PEEM) is described. Samples consisting of electrically isolated metal lines were used to quantify voltage contrast in PEEM. The voltage contrast behavior is characterized by comparing measured voltage contrast with calculated voltage contrast from two electrostatic models. Measured voltage contrast was found to agree closely with the calculated voltage contrast, demonstrating that voltage contrast in PEEM can be used to probe local voltage information in microelectronic devices in a non-intrusive fashion. △ Less

Submitted 30 April, 2009; originally announced May 2009.

Comments: 26 pages, 8 figures

Defect scattering in graphene

Authors: Jian-Hao Chen, W. G. Cullen, C. Jang, M. S. Fuhrer, E. D. Williams

Abstract: Irradiation of graphene on SiO2 by 500 eV Ne and He ions creates defects that cause intervalley scattering as evident from a significant Raman D band intensity. The defect scattering gives a conductivity proportional to charge carrier density, with mobility decreasing as the inverse of the ion dose. The mobility decrease is four times larger than for a similar concentration of singly charged imp… ▽ More Irradiation of graphene on SiO2 by 500 eV Ne and He ions creates defects that cause intervalley scattering as evident from a significant Raman D band intensity. The defect scattering gives a conductivity proportional to charge carrier density, with mobility decreasing as the inverse of the ion dose. The mobility decrease is four times larger than for a similar concentration of singly charged impurities. The minimum conductivity decreases proportional to the mobility to values lower than 4e^2/(pi*h), the minimum theoretical value for graphene free of intervalley scattering. Defected graphene shows a diverging resistivity at low temperature, indicating insulating behavior. The results are best explained by ion-induced formation of lattice defects that result in mid-gap states. △ Less

Submitted 14 March, 2009; originally announced March 2009.

Comments: 16 pages, 5 figures

Journal ref: Physical Review Letters 102, 236805 (2009)

Diffusive Charge Transport in Graphene on SiO2

Authors: J. -H. Chen, C. Jang, M. Ishigami, S. Xiao, E. D. Williams, M. S. Fuhrer

Abstract: We review our recent work on the physical mechanisms limiting the mobility of graphene on SiO2. We have used intentional addition of charged scattering impurities and systematic variation of the dielectric environment to differentiate the effects of charged impurities and short-range scatterers. The results show that charged impurities indeed lead to a conductivity linear in density in graphene,… ▽ More We review our recent work on the physical mechanisms limiting the mobility of graphene on SiO2. We have used intentional addition of charged scattering impurities and systematic variation of the dielectric environment to differentiate the effects of charged impurities and short-range scatterers. The results show that charged impurities indeed lead to a conductivity linear in density in graphene, with a scattering magnitude that agrees quantitatively with theoretical estimates [1]; increased dielectric screening reduces scattering from charged impurities, but increases scattering from short-range scatterers [2]. We evaluate the effects of the corrugations (ripples) of graphene on SiO2 on transport by measuring the height-height correlation function. The results show that the corrugations cannot mimic long-range (charged impurity) scattering effects, and have too small an amplitude-to-wavelength ratio to significantly affect the observed mobility via short-range scattering [3, 4]. Temperature-dependent measurements show that longitudinal acoustic phonons in graphene produce a resistivity linear in temperature and independent of carrier density [5]; at higher temperatures, polar optical phonons of the SiO2 substrate give rise to an activated, carrier density-dependent resistivity [5]. Together the results paint a complete picture of charge carrier transport in graphene on SiO2 in the diffusive regime. △ Less

Submitted 12 December, 2008; originally announced December 2008.

Comments: 28 pages, 7 figures, submitted to Graphene Week proceedings

Journal ref: Solid State Communications 149, 1080 (2009)

Pentacene islands grown on ultra-thin SiO2

Authors: B. R. Conrad, W. G. Cullen, B. C. Riddick, E. D. Williams

Abstract: Ultra-thin oxide (UTO) films were grown on Si(111) in ultrahigh vacuum at room temperature and characterized by scanning tunneling microscopy. The ultra-thin oxide films were then used as substrates for room temperature growth of pentacene. The apparent height of the first layer is 1.57 +/- 0.05 nm, indicating standing up pentacene grains in the thin-film phase were formed. Pentacene is molecula… ▽ More Ultra-thin oxide (UTO) films were grown on Si(111) in ultrahigh vacuum at room temperature and characterized by scanning tunneling microscopy. The ultra-thin oxide films were then used as substrates for room temperature growth of pentacene. The apparent height of the first layer is 1.57 +/- 0.05 nm, indicating standing up pentacene grains in the thin-film phase were formed. Pentacene is molecularly resolved in the second and subsequent molecular layers. The measured in-plane unit cell for the pentacene (001) plane (ab plane) is a=0.76+/-0.01 nm, b=0.59+/-0.01 nm, and gamma=87.5+/-0.4 degrees. The films are unperturbed by the UTO's short-range spatial variation in tunneling probability, and reduce its corresponding effective roughness and correlation exponent with increasing thickness. The pentacene surface morphology follows that of the UTO substrate, preserving step structure, the long range surface rms roughness of ~0.1 nm, and the structural correlation exponent of ~1. △ Less

Submitted 15 November, 2008; originally announced November 2008.

Comments: 15 pages, 4 figures

Dynamic interfaces in an organic thin film

Authors: Chenggang Tao, Qiang Liu, Blake C. Riddick, William G. Cullen, Janice Reutt-Robey, John D. Weeks, Ellen D. Williams

Abstract: Low-dimensional boundaries between phases and domains in organic thin films are important in charge transport and recombination. Here, fluctuations of interfacial boundaries in an organic thin film, acridine-9-carboxylic acid (ACA) on Ag(111), have been visualized in real time, and measured quantitatively, using Scanning Tunneling Microscopy. The boundaries fluctuate via molecular exchange with… ▽ More Low-dimensional boundaries between phases and domains in organic thin films are important in charge transport and recombination. Here, fluctuations of interfacial boundaries in an organic thin film, acridine-9-carboxylic acid (ACA) on Ag(111), have been visualized in real time, and measured quantitatively, using Scanning Tunneling Microscopy. The boundaries fluctuate via molecular exchange with exchange time constants of 10-30 ms at room temperature, yielding length mode fluctuations that should yield characteristic f-1/2 signatures for frequencies less than ~100 Hz. Although ACA has highly anisotropic intermolecular interactions, it forms islands that are compact in shape with crystallographically distinct boundaries that have essentially identical thermodynamic and kinetic properties . The physical basis of the modified symmetry is shown to arise from significantly different substrate interactions induced by alternating orientations of successive molecules in the condensed phase. Incorporating this additional set of interactions in a lattice gas model leads to effective multi-component behavior, as in the Blume-Emery-Griffiths (BEG) model, and can straightforwardly reproduce the experimentally observed isotropic behavior. The general multi-component description allows the domain shapes and boundary fluctuations to be tuned from isotropic to highly anisotropic in terms of the balance between intermolecular interactions and molecule-substrate interactions. Key words: Organic thin film, fluctuations, STM, molecular interactions, diffusion kinetics, phase coexistence △ Less

Submitted 12 November, 2008; originally announced November 2008.

Comments: 32 pages, 7 figures

Journal ref: Proceedings of the National Academy of Sciences, Vol. 105, No. 43, 16418-16425 (2008)

Atomic Structure of Graphene on SiO2

Authors: Masa Ishigami, J. H. Chen, W. G. Cullen, M. S. Fuhrer, E. D. Williams

Abstract: We employ scanning probe microscopy to reveal atomic structures and nanoscale morphology of graphene-based electronic devices (i.e. a graphene sheet supported by an insulating silicon dioxide substrate) for the first time. Atomic resolution STM images reveal the presence of a strong spatially dependent perturbation, which breaks the hexagonal lattice symmetry of the graphitic lattice. Structural… ▽ More We employ scanning probe microscopy to reveal atomic structures and nanoscale morphology of graphene-based electronic devices (i.e. a graphene sheet supported by an insulating silicon dioxide substrate) for the first time. Atomic resolution STM images reveal the presence of a strong spatially dependent perturbation, which breaks the hexagonal lattice symmetry of the graphitic lattice. Structural corrugations of the graphene sheet partially conform to the underlying silicon oxide substrate. These effects are obscured or modified on graphene devices processed with normal lithographic methods, as they are covered with a layer of photoresist residue. We enable our experiments by a novel cleaning process to produce atomically-clean graphene sheets. △ Less

Submitted 4 November, 2008; originally announced November 2008.

Comments: 13 pages, 4 figures

Journal ref: NanoLetters 7, 1643-1648, 2007

Spatial First-passage Statistics of Al/Si(111)-(root3 x root3) Step Fluctuations

Authors: B. R. Conrad, W. G. Cullen, D. B. Dougherty, I. Lyubinetsky, E. D. Williams

Abstract: Spatial step edge fluctuations on a multi-component surface of Al/Si(111)-(root3 x root3) were measured via scanning tunneling microscopy over a temperature range of 720K-1070K, for step lengths of L = 65-160 nm. Even though the time scale of fluctuations of steps on this surface varies by orders of magnitude over the indicated temperature ranges, measured first-passage spatial persistence and s… ▽ More Spatial step edge fluctuations on a multi-component surface of Al/Si(111)-(root3 x root3) were measured via scanning tunneling microscopy over a temperature range of 720K-1070K, for step lengths of L = 65-160 nm. Even though the time scale of fluctuations of steps on this surface varies by orders of magnitude over the indicated temperature ranges, measured first-passage spatial persistence and survival probabilities are temperature independent. The power law functional form for spatial persistence probabilities is confirmed and the symmetric spatial persistence exponent is measured to be theta = 0.498 +/- 0.062 in agreement with the theoretical prediction theta = 1/2. The survival probability is found to scale directly with y/L, where y is the distance along the step edge. The form of the survival probabilities agree quantitatively with the theoretical prediction, which yields exponential decay in the limit of small y/L. The decay constant is found experimentally to be ys/L= 0.076 +/- 0.033 for y/L <= 0.2. △ Less

Submitted 2 October, 2008; originally announced October 2008.

Comments: 21 pages, 6 figures

Journal ref: Phys. Rev. E 75, 021603 (2007)

Effect of impurities on pentacene island nucleation

Authors: B. R. Conrad, Elba Gomar-Nadal, W. G. Cullen, A. Pimpinelli, T. L. Einstein, E. D. Williams

Abstract: Pentacenequinone (PnQ) impurities have been introduced into a pentacene source material in a controlled manner to quantify the relative effects of the impurity content on grain boundary structure and thin film nucleation. Atomic force microscopy (AFM) has been employed to directly characterize films grown using 0.0-7.5% PnQ by weight in the source material. Analysis of the distribution of captur… ▽ More Pentacenequinone (PnQ) impurities have been introduced into a pentacene source material in a controlled manner to quantify the relative effects of the impurity content on grain boundary structure and thin film nucleation. Atomic force microscopy (AFM) has been employed to directly characterize films grown using 0.0-7.5% PnQ by weight in the source material. Analysis of the distribution of capture zones areas of submonolayer islands as a function of impurity content shows that for large PnQ content the critical nucleus size for forming a Pn island is smaller than for low PnQ content. This result indicates a favorable energy for formation of Pn-PnQ complexes, which in turn suggests that the primary effect of PnQ on Pn mobility may arise from homogeneous distribution of PnQ defects. △ Less

Submitted 26 September, 2008; originally announced September 2008.

Comments: 16 Pages, 5 figures, 1 Table

Journal ref: Phys. Rev. B 77, 205328 (2008)

Printed Graphene Circuits

Authors: Jian-Hao Chen, Masa Ishigami, Chaun Jang, Daniel R. Hines, Michael S. Fuhrer, Ellen D. Williams

Abstract: we have fabricated transparent electronic devices based on graphene materials with thickness down to one single atomic layer by the transfer printing method. The resulting printed graphene devices retain high field effect mobility and have low contact resistance. The results show that the transfer printing method is capable of high-quality transfer of graphene materials from silicon dioxide subs… ▽ More we have fabricated transparent electronic devices based on graphene materials with thickness down to one single atomic layer by the transfer printing method. The resulting printed graphene devices retain high field effect mobility and have low contact resistance. The results show that the transfer printing method is capable of high-quality transfer of graphene materials from silicon dioxide substrates, and the method thus will have wide applications in manipulating and delivering graphene materials to desired substrate and device geometries. Since the method is purely additive, it exposes graphene (or other functional materials) to no chemical preparation or lithographic steps, providing greater experimental control over device environment for reproducibility and for studies of fundamental transport mechanisms. Finally, the transport properties of the graphene devices on the PET substrate demonstrate the non-universality of minimum conductivity and the incompleteness of the current transport theory. △ Less

Submitted 9 September, 2008; originally announced September 2008.

Comments: 10 pages, 3 figures

Journal ref: Advanced Materials 19, 3623-3627 (2007)

Tuning the effective fine structure constant in graphene: opposing effects of dielectric screening on short- and long-range potential scattering

Authors: C. Jang, S. Adam, J. -H. Chen, E. D. Williams, S. Das Sarma, M. S. Fuhrer

Abstract: We reduce the dimensionless interaction strength in graphene by adding a water overlayer in ultra-high vacuum, thereby increasing dielectric screening. The mobility limited by long-range impurity scattering is increased over 30 percent, due to the background dielectric constant enhancement leading to reduced interaction of electrons with charged impurities. However, the carrier-density-independe… ▽ More We reduce the dimensionless interaction strength in graphene by adding a water overlayer in ultra-high vacuum, thereby increasing dielectric screening. The mobility limited by long-range impurity scattering is increased over 30 percent, due to the background dielectric constant enhancement leading to reduced interaction of electrons with charged impurities. However, the carrier-density-independent conductivity due to short range impurities is decreased by almost 40 percent, due to reduced screening of the impurity potential by conduction electrons. The minimum conductivity is nearly unchanged, due to canceling contributions from the electron/hole puddle density and long-range impurity mobility. Experimental data are compared with theoretical predictions with excellent agreement. △ Less

Submitted 8 September, 2008; v1 submitted 24 May, 2008; originally announced May 2008.

Comments: Revised version, accepted for publication in Phys. Rev. Lett

Journal ref: Phys. Rev. Lett. 101, 146805 (2008)

Percolative Effects on Noise in Pentacene Transistors

Authors: B. R. Conrad, W. G. Cullen, W. Yan, E. D. Williams

Abstract: The 1/f noise in pentacene thin film transistors has been measured as a function of device thickness from well above the effective conduction channel thickness to only two conducting layers. Over the entire thickness range, the spectral noise form is 1/f, and the noise parameter varies as (gate voltage)-1, confirming that the noise is due to mobility fluctuations, even in the thinnest films. Hoo… ▽ More The 1/f noise in pentacene thin film transistors has been measured as a function of device thickness from well above the effective conduction channel thickness to only two conducting layers. Over the entire thickness range, the spectral noise form is 1/f, and the noise parameter varies as (gate voltage)-1, confirming that the noise is due to mobility fluctuations, even in the thinnest films. Hooge's parameter varies as an inverse power-law with conductivity for all film thicknesses. The magnitude and transport characteristics of the spectral noise are well explained in terms of percolative effects arising from the grain boundary structure. △ Less

Submitted 26 September, 2008; v1 submitted 14 October, 2007; originally announced October 2007.

Comments: 13 pages, 4 figures, Published

Journal ref: Appl. Phys. Lett. 91, 242110 (2007)

Charged Impurity Scattering in Graphene

Authors: J. H. Chen, C. Jang, M. S. Fuhrer, E. D. Williams, M. Ishigami

Abstract: Since the experimental realization of graphene1, extensive theoretical work has focused on short-range disorder2-5, ''ripples''6, 7, or charged impurities2, 3, 8-13 to explain the conductivity as a function of carrier density sigma_(n)[1,14-18], and its minimum value sigma_min near twice the conductance quantum 4e2/h[14, 15, 19, 20]. Here we vary the density of charged impurities nimp on clean g… ▽ More Since the experimental realization of graphene1, extensive theoretical work has focused on short-range disorder2-5, ''ripples''6, 7, or charged impurities2, 3, 8-13 to explain the conductivity as a function of carrier density sigma_(n)[1,14-18], and its minimum value sigma_min near twice the conductance quantum 4e2/h[14, 15, 19, 20]. Here we vary the density of charged impurities nimp on clean graphene21 by deposition of potassium in ultra high vacuum. At non-zero carrier density, charged impurity scattering produces the ubiquitously observed1, 14-18 linear sigma_(n) with the theoretically-predicted magnitude. The predicted asymmetry11 for attractive vs. repulsive scattering of Dirac fermions is observed. Sigma_min occurs not at the carrier density which neutralizes nimp, but rather the carrier density at which the average impurity potential is zero10. Sigma_min decreases initially with nimp, reaching a minimum near 4e2/h at non-zero nimp, indicating that Sigma_min in present experimental samples does not probe Dirac-point physics14, 15, 19, 20 but rather carrier density inhomogeneity due to the impurity potential3, 9, 10. △ Less

Submitted 9 November, 2007; v1 submitted 17 August, 2007; originally announced August 2007.

Comments: 19 pages, 5 figures, Manuscript and figures completely updated

Journal ref: Nature Physics 4, 377 (2008)

Biased Structural Fluctuations due to Electron Wind Force

Authors: O. Bondarchuk, W. G. Cullen, M. Degawa, Ellen D. Williams

Abstract: Direct correlation between temporal structural fluctuations and electron wind force is demonstrated, for the first time, by STM imaging and analysis of atomically-resolved motion on a thin film surface under large applied current (10e5 Amp/sqare cm). The magnitude of the momentum transfer between current carriers and atoms in the fluctuating structure is at least five to fifteen times (plus or m… ▽ More Direct correlation between temporal structural fluctuations and electron wind force is demonstrated, for the first time, by STM imaging and analysis of atomically-resolved motion on a thin film surface under large applied current (10e5 Amp/sqare cm). The magnitude of the momentum transfer between current carriers and atoms in the fluctuating structure is at least five to fifteen times (plus or minus one sigma range) larger than for freely diffusing adatoms. The corresponding changes in surface resistivity will contribute significant fluctuation signature to nanoscale electronic properties. △ Less

Submitted 14 April, 2007; originally announced April 2007.

Comments: 15 pages

Persistence and survival in equilibrium step fluctuations

Authors: M. Constantin, C. Dasgupta, S. Das Sarma, D. B. Dougherty, E. D. Williams

Abstract: Results of analytic and numerical investigations of first-passage properties of equilibrium fluctuations of monatomic steps on a vicinal surface are reviewed. Both temporal and spatial persistence and survival probabilities, as well as the probability of persistent large deviations are considered. Results of experiments in which dynamical scanning tunneling microscopy is used to evaluate these f… ▽ More Results of analytic and numerical investigations of first-passage properties of equilibrium fluctuations of monatomic steps on a vicinal surface are reviewed. Both temporal and spatial persistence and survival probabilities, as well as the probability of persistent large deviations are considered. Results of experiments in which dynamical scanning tunneling microscopy is used to evaluate these first-passage properties for steps with different microscopic mechanisms of mass transport are also presented and interpreted in terms of theoretical predictions for appropriate models. Effects of discrete sampling, finite system size and finite observation time, which are important in understanding the results of experiments and simulations, are discussed. △ Less

Submitted 28 February, 2007; originally announced February 2007.

Comments: 30 pages, 12 figures, review paper for a special issue of JSTAT

Transmission Line Impedance of Carbon Nanotube Thin Films for Chemical Sensing

Authors: G. Esen, M. S. Fuhrer, M. Ishigami, E. D. Williams

Abstract: We measure the resistance and frequency-dependent gate capacitance of carbon nanotube (CNT) thin films in ambient, vacuum, and under low-pressure (10E-6 torr) analyte environments. We model the CNT film as an RC transmission line and show that changes in the measured capacitance as a function of gate bias and analyte pressure are consistent with changes in the transmission line impedance due to… ▽ More We measure the resistance and frequency-dependent gate capacitance of carbon nanotube (CNT) thin films in ambient, vacuum, and under low-pressure (10E-6 torr) analyte environments. We model the CNT film as an RC transmission line and show that changes in the measured capacitance as a function of gate bias and analyte pressure are consistent with changes in the transmission line impedance due to changes in the CNT film resistivity alone; the electrostatic gate capacitance of the CNT film does not depend on gate voltage or chemical analyte adsorption. However, the CNT film resistance is enormously sensitive to low pressure analyte exposure. △ Less

Submitted 16 December, 2006; originally announced December 2006.

Comments: 14 pages, 4 figures

The Effect of Transfer Printing on Pentacene Thin-Film Crystal Structure

Authors: Y. Shao, S. A. Solin, D. R. Hines, E. D. Williams

Abstract: The thermal deposition and transfer Printing method had been used to produce pentacene thin-films on SiO2/Si and plastic substrates (PMMA and PVP), respectively. X-ray diffraction patterns of pentacene thin films showed reflections associated with highly ordered polycrystalline films and a coexistence of two polymorph phases classified by their d-spacing, d(001): 14.4 and 15.4 A.The dependence o… ▽ More The thermal deposition and transfer Printing method had been used to produce pentacene thin-films on SiO2/Si and plastic substrates (PMMA and PVP), respectively. X-ray diffraction patterns of pentacene thin films showed reflections associated with highly ordered polycrystalline films and a coexistence of two polymorph phases classified by their d-spacing, d(001): 14.4 and 15.4 A.The dependence of the c-axis correlation length and the phase fraction on the film thickness and printing temperature were measured. A transition from the 15.4 A phase towards 14.4 A phase was also observed with increasing film thickness. An increase in the c-axis correlation length of approximately 12% ~16% was observed for Pn films transfer printed onto a PMMA coated PET substrate at 100~120 C as compared to as-grown Pn films on SiO2/Si substrates. The transfer printing method is shown to be an attractive for the fabrication of pentacene thin-film transistors on flexible substrates partly because of the resulting improvement in the quality of the pentacene film. △ Less

Submitted 6 February, 2006; originally announced February 2006.

Comments: 5 pages, 5 figures

Hooge's Constant of Carbon Nanotube Field Effect Transistors

Authors: Masa Ishigami, J. H. Chen, E. D. Williams, D. Tobias, Y. F. Chen, M. S. Fuhrer

Abstract: The 1/f noise in individual semiconducting carbon nanotubes (s-CNT) in a field effect transistor configuration has been measured in ultra-high vacuum and following exposure to air. The amplitude of the normalized current spectral noise density is independent of source-drain current, indicating the noise is due to mobility rather than number fluctuations. Hooge's constant for s-CNT is found to be… ▽ More The 1/f noise in individual semiconducting carbon nanotubes (s-CNT) in a field effect transistor configuration has been measured in ultra-high vacuum and following exposure to air. The amplitude of the normalized current spectral noise density is independent of source-drain current, indicating the noise is due to mobility rather than number fluctuations. Hooge's constant for s-CNT is found to be 9.3 plus minus 0.4x10^-3. The magnitude of the 1/f noise is substantially degreased by exposing the devices to air. △ Less

Submitted 19 January, 2006; originally announced January 2006.

Correlations in nano-scale step fluctuations: comparison of simulation and experiments

Authors: F. Szalma, D. B. Dougherty, M. Degawa, Ellen D. Williams, Michael I. Haftel, T. L. Einstein

Abstract: We analyze correlations in step-edge fluctuations using the Bortz-Kalos-Lebowitz kinetic Monte Carlo algorithm, with a 2-parameter expression for energy barriers, and compare with our VT-STM line-scan experiments on spiral steps on Pb(111). The scaling of the correlation times gives a dynamic exponent confirming the expected step-edge-diffusion rate-limiting kinetics both in the MC and in the ex… ▽ More We analyze correlations in step-edge fluctuations using the Bortz-Kalos-Lebowitz kinetic Monte Carlo algorithm, with a 2-parameter expression for energy barriers, and compare with our VT-STM line-scan experiments on spiral steps on Pb(111). The scaling of the correlation times gives a dynamic exponent confirming the expected step-edge-diffusion rate-limiting kinetics both in the MC and in the experiments. We both calculate and measure the temperature dependence of (mass) transport properties via the characteristic hop** times and deduce therefrom the notoriously-elusive effective energy barrier for the edge fluctuations. With a careful analysis we point out the necessity of a more complex model to mimic the kinetics of a Pb(111) surface for certain parameter ranges. △ Less

Submitted 11 January, 2006; originally announced January 2006.

Comments: 10 pages, 9 figures, submitted to Physical Review B

Journal ref: Phys. Rev. B 73, 115413 [10 pp.] (2006)

Spiral Evolution in a Confined Geometry

Authors: Madhav Ranganathan, D. B. Dougherty, W. G. Cullen, Tong Zhao, John D. Weeks, E. D. Williams

Abstract: Supported nanoscale lead crystallites with a step emerging from a non-centered screw dislocation on the circular top facet were prepared by rapid cooling from just above the melting temperature. STM observations of the top facet show a nonuniform rotation rate and shape of the spiral step as the crystallite relaxes. These features can be accurately modeled using curvature driven dynamics, as in… ▽ More Supported nanoscale lead crystallites with a step emerging from a non-centered screw dislocation on the circular top facet were prepared by rapid cooling from just above the melting temperature. STM observations of the top facet show a nonuniform rotation rate and shape of the spiral step as the crystallite relaxes. These features can be accurately modeled using curvature driven dynamics, as in classical models of spiral growth, with boundary conditions fixing the dislocation core and regions of the step lying along the outer facet edge. △ Less

Submitted 21 November, 2005; originally announced November 2005.

Comments: 4 pages, 3 figures, to be published in Physical Review Letters

Nanotransfer Printing of Organic and Carbon Nanotube Thin-Film Transistors on Plastic Substrates

Authors: D. R. Hines, S. Mezhenny, M. Breban, E. D. Williams, V. W. Ballarotto, G. Esen, A. Southard, M. S. Fuhrer

Abstract: A printing process for high-resolution transfer of all components for organic electronic devices on plastic substrates has been developed and demonstrated for pentacene (Pn), poly (3-hexylthiophene) and carbon nanotube (CNT) thin-film transistors (TFTs). The nanotransfer printing process allows fabrication of an entire device without exposing any component to incompatible processes and with redu… ▽ More A printing process for high-resolution transfer of all components for organic electronic devices on plastic substrates has been developed and demonstrated for pentacene (Pn), poly (3-hexylthiophene) and carbon nanotube (CNT) thin-film transistors (TFTs). The nanotransfer printing process allows fabrication of an entire device without exposing any component to incompatible processes and with reduced need for special chemical preparation of transfer or device substrates. Devices on plastic substrates include a Pn TFT with a saturation, field-effect mobility of 0.09 cm^2 (Vs)^-1 and on/off ratio approximately 10^4 and a CNT TFT which exhibits ambipolar behavior and no hysteresis. △ Less

Submitted 18 March, 2005; originally announced March 2005.

Comments: to appear in Applied Physics Letters

Nanoscale Equilibrium Crystal Shapes

Authors: M. Degawa, F. Szalma, E. D. Williams

Abstract: The finite size and interface effects on equilibrium crystal shape (ECS) have been investigated for the case of a surface free energy density including step stiffness and inverse-square step-step interactions. Explicitly including the curvature of a crystallite leads to an extra boundary condition in the solution of the crystal shape, yielding a family of crystal shapes, governed by a shape para… ▽ More The finite size and interface effects on equilibrium crystal shape (ECS) have been investigated for the case of a surface free energy density including step stiffness and inverse-square step-step interactions. Explicitly including the curvature of a crystallite leads to an extra boundary condition in the solution of the crystal shape, yielding a family of crystal shapes, governed by a shape parameter c. The total crystallite free energy, including interface energy, is minimized for c=0, yielding in all cases the traditional PT shape (z x3/2). Solutions of the crystal shape for c&#8800;0 are presented and discussed in the context of meta-stable states due to the energy barrier for nucleation. Explicit scaled relationships for the ECS and meta-stable states in terms of the measurable step parameters and the interfacial energy are presented. △ Less

Submitted 31 December, 2004; originally announced January 2005.

Comments: 35 pages

A facet is not an island: step-step interactions and the fluctuations of the boundary of a crystal facet

Authors: Alberto Pimpinelli, M. Degawa, T. L. Einstein, Ellen D. Williams

Abstract: In a recent paper [Ferrari et al., Phys. Rev. E 69, 035102(R) (2004)], the scaling law of the fluctuations of the step limiting a crystal facet has been computed as a function of the facet size. Ferrari et al. use rigorous, but physically rather obscure, arguments. Approaching the problem from a different perspective, we rederive more transparently the scaling behavior of facet edge fluctuations… ▽ More In a recent paper [Ferrari et al., Phys. Rev. E 69, 035102(R) (2004)], the scaling law of the fluctuations of the step limiting a crystal facet has been computed as a function of the facet size. Ferrari et al. use rigorous, but physically rather obscure, arguments. Approaching the problem from a different perspective, we rederive more transparently the scaling behavior of facet edge fluctuations as a function of time. Such behavior can be scrutinized with STM experiments and with numerical simulations. △ Less

Submitted 6 October, 2004; originally announced October 2004.

Comments: 3 pages

Journal ref: Surf. Sci. Lett. 598, L355-L360 (2005)

Sampling Time Effects for Persistence and Survival in Step Structural Fluctuations

Authors: D. B. Dougherty, C. Tao, O. Bondarchuk, W. G. Cullen, E. D. Williams, M. Constantin, C. Dasgupta, S. Das Sarma

Abstract: The effects of sampling rate and total measurement time have been determined for single-point measurements of step fluctuations within the context of first-passage properties. Time dependent STM has been used to evaluate step fluctuations on Ag(111) films grown on mica as a function of temperature (300-410 K), on screw dislocations on the facets of Pb crystallites at 320K, and on Al-terminated S… ▽ More The effects of sampling rate and total measurement time have been determined for single-point measurements of step fluctuations within the context of first-passage properties. Time dependent STM has been used to evaluate step fluctuations on Ag(111) films grown on mica as a function of temperature (300-410 K), on screw dislocations on the facets of Pb crystallites at 320K, and on Al-terminated Si(111) over the temperature range 770K - 970K. Although the fundamental time constant for step fluctuations on Ag and Al/Si varies by orders of magnitude over the temperature ranges of measurement, no dependence of the persistence amplitude on temperature is observed. Instead, the persistence probability is found to scale directly with t/Dt where Dt is the time interval used for sampling. Survival probabilities show a more complex scaling dependence which includes both the sampling interval and the total measurement time tm. Scaling with t/Dt occurs only when Dt/tm is a constant. We show that this observation is equivalent to theoretical predictions that the survival probability will scale as Dt/L^z, where L is the effective length of a step. This implies that the survival probability for large systems, when measured with fixed values of tm or Dt should also show little or no temperature dependence. △ Less

Submitted 21 October, 2005; v1 submitted 4 October, 2004; originally announced October 2004.

Comments: 27 pages, 10 figures

Journal ref: Phys. Rev. E 71, 021602 (2005)

Distinguishing step relaxation mechanisms via pair correlation functions

Authors: D. B. Dougherty, I. Lyubinetsky, T. L. Einstein, E. D. Williams

Abstract: Theoretical predictions of coupled step motion are tested by direct STM measurement of the fluctuations of near-neighbor pairs of steps on Si(111)-root3 x root3 R30 - Al at 970K. The average magnitude of the pair-correlation function is within one standard deviation of zero, consistent with uncorrelated near-neighbor step fluctuations. The time dependence of the pair-correlation function shows n… ▽ More Theoretical predictions of coupled step motion are tested by direct STM measurement of the fluctuations of near-neighbor pairs of steps on Si(111)-root3 x root3 R30 - Al at 970K. The average magnitude of the pair-correlation function is within one standard deviation of zero, consistent with uncorrelated near-neighbor step fluctuations. The time dependence of the pair-correlation function shows no statistically significant agreement with the predicted t^1/2 growth of pair correlations via rate-limiting atomic diffusion between adjacent steps. The physical considerations governing uncorrelated step fluctuations occurring via random attachment/detachment events at the step edge are discussed. △ Less

Submitted 20 August, 2004; originally announced August 2004.

Comments: 17 pages, 4 figures

Journal ref: Phys. Rev. B 70, 235422 [5 pp.] (2004)

Correlation Time for Step Structural Fluctuations

Authors: O. Bondarchuk, D. B. Dougherty, M. Degawa, E. D. Williams, M. Constantin, C. Dasgupta, S. DasSarma

Abstract: Time dependent STM has been used to evaluate step fluctuations as a function of temperature (300-450 K) on Ag(111) films grown on mica. The temporal correlation function scales as a power law in time, t^1/n with measured values of 1/n varying over a range of 0.19 pm 0.04 to 0.29 pm 0.04 with no dependence on temperature. The average value of 1/n = 0.24 pm 0.01 is consistent with step-edge diffus… ▽ More Time dependent STM has been used to evaluate step fluctuations as a function of temperature (300-450 K) on Ag(111) films grown on mica. The temporal correlation function scales as a power law in time, t^1/n with measured values of 1/n varying over a range of 0.19 pm 0.04 to 0.29 pm 0.04 with no dependence on temperature. The average value of 1/n = 0.24 pm 0.01 is consistent with step-edge diffusion limited fluctuations (n = z = 4, conserved noise). The magnitude of the time correlation function and the width of the fluctuations both scale with temperature with the same apparent activation energy of Eeff = 0.21 pm 0.02 eV, indicating that the correlation time is at most weakly temperature dependent. Direct analysis of the autocorrelation function confirms that the correlation time is at most weakly temperature dependent, and thus the apparent correlation length is strongly temperature dependent. This behavior can be reproduced by assuming that the apparent correlation length is governed by the longest wavelength of step fluctuations that can be sampled in the measurement time interval. Evaluation of the correlation time for previous measurements for Al/Si(111) (z =2) yields the same conclusion about measurement time interval. In both cases the ratio of the measurement time to the effective correlation time is on the order of 10. △ Less

Submitted 9 August, 2004; originally announced August 2004.

Infinite family of persistence exponents for interface fluctuations

Authors: M. Constantin, S. Das Sarma, C. Dasgupta, O. Bondarchuk, D. B. Dougherty, E. D. Williams

Abstract: We show experimentally and theoretically that the persistence of large deviations in equilibrium step fluctuations is characterized by an infinite family of independent exponents. These exponents are obtained by carefully analyzing dynamical experimental images of Al/Si(111) and Ag(111) equilibrium steps fluctuating at high (970K) and low (320K) temperatures respectively, and by quantitatively i… ▽ More We show experimentally and theoretically that the persistence of large deviations in equilibrium step fluctuations is characterized by an infinite family of independent exponents. These exponents are obtained by carefully analyzing dynamical experimental images of Al/Si(111) and Ag(111) equilibrium steps fluctuating at high (970K) and low (320K) temperatures respectively, and by quantitatively interpreting our observations on the basis of the corresponding coarse-grained discrete and continuum theoretical models for thermal surface step fluctuations under attachment/detachment (``high-temperature'') and edge-diffusion limited kinetics (``low-temperature'') respectively. △ Less

Submitted 27 February, 2004; v1 submitted 11 March, 2003; originally announced March 2003.

Comments: LaTeX, 4 pages, 2 figures

Journal ref: Phys. Rev. Lett. 91, 086103 (2003)

Experimental Persistence Probability for Fluctuating Steps

Authors: D. B. Dougherty, I. Lyubinetsky, E. D. Williams, M. Constantin, C. Dasgupta, S. Das Sarma

Abstract: The persistence behavior for fluctuating steps on the $Si(111)$ $(\sqrt3 \times \sqrt3)R30^{0} - Al$ surface was determined by analyzing time-dependent STM images for temperatures between 770 and 970K. The measured persistence probability follows a power law decay with an exponent of $θ=0.77 \pm 0.03$. This is consistent with the value of $θ= 3/4$ predicted for attachment/detachment limited step… ▽ More The persistence behavior for fluctuating steps on the $Si(111)$ $(\sqrt3 \times \sqrt3)R30^{0} - Al$ surface was determined by analyzing time-dependent STM images for temperatures between 770 and 970K. The measured persistence probability follows a power law decay with an exponent of $θ=0.77 \pm 0.03$. This is consistent with the value of $θ= 3/4$ predicted for attachment/detachment limited step kinetics. If the persistence analysis is carried out in terms of return to a fixed reference position, the measured persistence probability decays exponentially. Numerical studies of the Langevin equation used to model step motion corroborate the experimental observations. △ Less

Submitted 16 September, 2002; v1 submitted 4 September, 2002; originally announced September 2002.

Comments: LaTeX, 11 pages, 4 figures, minor changes in References section

Journal ref: Phys.Rev.Lett. 89, 136102 (2002)

Exact Wavefunctions for a Delta Function Bose Gas with Higher Derivatives

Authors: Eric D. Williams

Abstract: A quantum mechanical system describing bosons in one space dimension with a kinetic energy of arbitrary order in derivatives and a delta function interaction is studied. Exact wavefunctions for an arbitrary number of particles and order of derivative are constructed. Also, equations determining the spectrum of eigenvalues are found. A quantum mechanical system describing bosons in one space dimension with a kinetic energy of arbitrary order in derivatives and a delta function interaction is studied. Exact wavefunctions for an arbitrary number of particles and order of derivative are constructed. Also, equations determining the spectrum of eigenvalues are found. △ Less

Submitted 12 June, 1996; originally announced June 1996.

Thermodynamics and Excitations of the Supersymmetric $t-J$ Model

Authors: Eric D. Williams

Abstract: The free energy of the supersymmetric $t-J$ model is expressed in terms of finite temperature excitations above thermodynamic equilibrium. This reveals that the free energy has the form of noninteracting fermions with temperature dependant excitation spectra. We also discuss the ground state and zero temperature excitations. The free energy of the supersymmetric $t-J$ model is expressed in terms of finite temperature excitations above thermodynamic equilibrium. This reveals that the free energy has the form of noninteracting fermions with temperature dependant excitation spectra. We also discuss the ground state and zero temperature excitations. △ Less

Submitted 7 April, 1993; originally announced April 1993.

Comments: 20 pages (2 figures not included, will send on request), LaTex, Preprint # ITP-SB-92-72