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Role of Inorganic Cations in the Excitonic Properties of Lead Halide Perovskites
Authors:
Małgorzata Wierzbowska,
Juan J. Meléndez
Abstract:
We theoretically investigate lead iodide perovskites of general formula APbI$_3$ for a series of metallic cations (namely Cs$^+$, Rb$^+$, K$^+$, Na$^+$ and Li$^+$) by means of the density functional theory, GW method and Bethe-Salpeter equation including spin-orbit coupling. We demonstrate that the low-energy edges (up to 1.3 eV) of the absorption spectra are dominated by weakly bound excitons, wi…
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We theoretically investigate lead iodide perovskites of general formula APbI$_3$ for a series of metallic cations (namely Cs$^+$, Rb$^+$, K$^+$, Na$^+$ and Li$^+$) by means of the density functional theory, GW method and Bethe-Salpeter equation including spin-orbit coupling. We demonstrate that the low-energy edges (up to 1.3 eV) of the absorption spectra are dominated by weakly bound excitons, with binding energies $E_b$ $\sim$ 30-80~meV, and the corresponding intensities grow as metallic %A$^+$ cations become lighter. The middle parts of the spectra (1.8-2.4 eV), on the other hand, contain optical dipole transitions comprising more strongly bound excitons ($E_b$ $\sim$ 150-200~meV) located at PbI$_3$. These parts of the spectra correspond to the optical-gain wavelengths which are experimentally achieved in optically-pumped perovskite lasers. Finally, the higher energy parts, from about 2.8~eV (LiPbI$_3$) to 4.3 eV (CsPbI$_3$), contain optical transitions with very strongly bound excitons ($E_b$ $\sim$ 220-290~meV) located at the halide atoms and the empty states of the metallic cations.
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Submitted 29 January, 2024;
originally announced January 2024.
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Exploring epitaxial structures for electrically pumped perovskite lasers: a study of CsPb(Br,I)$_3$ based on the \textit{ab initio} Bethe-Salpeter equation
Authors:
Małgorzata Wierzbowska,
Juan J. Meléndez
Abstract:
Halide perovskites are widely used as components of electronic and optoelectronic devices such as solar cells, light-emitting diodes (LEDs), optically pumped lasers, field-effect transistors, photodetectors, and $γ$-detectors. Despite this wide range of applications, the construction of an electrically pumped perovskite laser remains challenging. In this paper, we numerically justify that mixing t…
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Halide perovskites are widely used as components of electronic and optoelectronic devices such as solar cells, light-emitting diodes (LEDs), optically pumped lasers, field-effect transistors, photodetectors, and $γ$-detectors. Despite this wide range of applications, the construction of an electrically pumped perovskite laser remains challenging. In this paper, we numerically justify that mixing two perovskite compounds with different halide elements can lead to optical properties suitable for electrical pum**. As a reference, the chosen model material was CsPbBr$_3$, whose performance as a part of lasers has been widely recognised, with some Br atoms substituted by I at specific sites. In particular, a strong enhancement of the low-energy absorption peaks has been obtained using the \textit{ab initio} Bethe-Salpeter equation. Based on these results, we propose specific architectures of ordered do** that could be realised by epitaxial growth. Efficient light emission from the bottom of the conduction band is expected.
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Submitted 29 January, 2024;
originally announced January 2024.
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MoS2 thin-film transistors spin-states, of conduction electrons and vacancies, distinguished by operando electron spin resonance
Authors:
Naho Tsunetomo,
Shohei Iguchi,
Małgorzata Wierzbowska,
Akiko Ueda,
Won Yousang,
Heo Sinae,
Jeong Yesul,
Yutaka Wakayama,
Kazuhiro Marumoto
Abstract:
Transition metal dichalcogenide MoS2 is a two-dimensional material, attracting much attention for next-generation applications thanks to rich functionalities stemmed from the crystal structure. Many experimental and theoretical works have focused on the spin-orbit interaction which couples the valley and spin degree of freedom so that the spin-states can be electrically controllable. However, the…
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Transition metal dichalcogenide MoS2 is a two-dimensional material, attracting much attention for next-generation applications thanks to rich functionalities stemmed from the crystal structure. Many experimental and theoretical works have focused on the spin-orbit interaction which couples the valley and spin degree of freedom so that the spin-states can be electrically controllable. However, the spin-states of charge carriers and vacancies have not been yet elucidated directly from a microscopic viewpoint. We report the spin-states in thin-film electric double-layer transistors using operando electron spin resonance (ESR) spectroscopy. We have observed clearly different ESR signals of the conduction electrons and vacancies, and distinguished the corresponding spin-states from the signals and theoretical calculations, evaluating the gate-voltage dependence and spin-susceptibility and g-factor temperature dependence. This analysis gives deep insight into the MoS2 magnetism and clearly indicates the lower charge mobilities compared to graphene, which would be useful for improvements of the device characteristics and new applications.
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Submitted 14 June, 2020;
originally announced June 2020.
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Wannier90 as a community code: new features and applications
Authors:
Giovanni Pizzi,
Valerio Vitale,
Ryotaro Arita,
Stefan Blügel,
Frank Freimuth,
Guillaume Géranton,
Marco Gibertini,
Dominik Gresch,
Charles Johnson,
Takashi Koretsune,
Julen Ibañez-Azpiroz,
Hyungjun Lee,
Jae-Mo Lihm,
Daniel Marchand,
Antimo Marrazzo,
Yuriy Mokrousov,
Jamal I. Mustafa,
Yoshiro Nohara,
Yusuke Nomura,
Lorenzo Paulatto,
Samuel Poncé,
Thomas Ponweiser,
Junfeng Qiao,
Florian Thöle,
Stepan S. Tsirkin
, et al. (6 additional authors not shown)
Abstract:
Wannier90 is an open-source computer program for calculating maximally-localised Wannier functions (MLWFs) from a set of Bloch states. It is interfaced to many widely used electronic-structure codes thanks to its independence from the basis sets representing these Bloch states. In the past few years the development of Wannier90 has transitioned to a community-driven model; this has resulted in a n…
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Wannier90 is an open-source computer program for calculating maximally-localised Wannier functions (MLWFs) from a set of Bloch states. It is interfaced to many widely used electronic-structure codes thanks to its independence from the basis sets representing these Bloch states. In the past few years the development of Wannier90 has transitioned to a community-driven model; this has resulted in a number of new developments that have been recently released in Wannier90 v3.0. In this article we describe these new functionalities, that include the implementation of new features for wannierisation and disentanglement (symmetry-adapted Wannier functions, selectively-localised Wannier functions, selected columns of the density matrix) and the ability to calculate new properties (shift currents and Berry-curvature dipole, and a new interface to many-body perturbation theory); performance improvements, including parallelisation of the core code; enhancements in functionality (support for spinor-valued Wannier functions, more accurate methods to interpolate quantities in the Brillouin zone); improved usability (improved plotting routines, integration with high-throughput automation frameworks), as well as the implementation of modern software engineering practices (unit testing, continuous integration, and automatic source-code documentation). These new features, capabilities, and code development model aim to further sustain and expand the community uptake and range of applicability, that nowadays spans complex and accurate dielectric, electronic, magnetic, optical, topological and transport properties of materials.
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Submitted 23 July, 2019;
originally announced July 2019.
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Ferroelectric $π$-stacks of molecules with the energy gaps in the sunlight range
Authors:
Paweł Masiak,
Małgorzata Wierzbowska
Abstract:
Ferroelectric $π$-stacked molecular wires for solar cell applications are theoretically designed, in such a way that their energy gaps fall within visible and infrared range of the Sun radiation. Band engineering is tailored by a modification of the number of the aromatic rings and via a choice of the number and kind of the dipole groups. The electronic structures of molecular wires and the chemic…
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Ferroelectric $π$-stacked molecular wires for solar cell applications are theoretically designed, in such a way that their energy gaps fall within visible and infrared range of the Sun radiation. Band engineering is tailored by a modification of the number of the aromatic rings and via a choice of the number and kind of the dipole groups. The electronic structures of molecular wires and the chemical character of the electron-hole pair are analyzed within the density functional theory (DFT) framework and the hybrid DFT approach by means of the B3LYP scheme. Moreover, it is found that one of the advantageous properties of these systems - namely the separate-path electron and hole transport - reported earlier, still holds for the larger molecules, due to the dipole selection rules for the electron-hole generation, which do not allow the lowest optical transitions between the states localized at the same part of the molecule.
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Submitted 13 January, 2017;
originally announced January 2017.
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Effect of graphene substrate on the spectroscopic properties of photovoltaic molecules: role of the in-plane and out-of-plane pi-bonds
Authors:
M. Wawrzyniak-Adamczewska,
M. Wierzbowska,
J. J. Melendez
Abstract:
The electronic structure of pentacene decorated with dipole groups (d-pentacene) and adsorbed onto a graphene substrate has been studied within the density functional theory. Three reference configurations have been considered, namely the ideal molecule without distortions, the actual molecule including intramolecular distortions and the molecule adsorbed onto graphene. Calculations show a noticea…
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The electronic structure of pentacene decorated with dipole groups (d-pentacene) and adsorbed onto a graphene substrate has been studied within the density functional theory. Three reference configurations have been considered, namely the ideal molecule without distortions, the actual molecule including intramolecular distortions and the molecule adsorbed onto graphene. Calculations show a noticeable charge redistribution within the d-pentacene + graphene system due to molecular distortion, as well as the formation of weak $π$-bonds between the molecule and the substrate. Additionally, the effect of the chemical modification of the terminal saturation with --H by --OH and =O is checked to explore the possibility of "levels engineering". The imaginary part of the dielectric function of d-pentacene in the ideal and distorted conformations and the molecule adsorbed at graphene were calculated within the random phase approximation. Results show that, even though molecular distortions change apreciably the absorption spectrum of isolated d-pentacene, the adsorbed molecule exhibits an optical spectrum which mimics quite much that of single graphene.
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Submitted 30 December, 2016;
originally announced December 2016.
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Breathing bands due to molecular order in CH3NH3PbI3
Authors:
Malgorzata Wierzbowska,
Juan Jose Melendez,
Daniele Varsano
Abstract:
CH3NH3PbI3 perovskite is nowadays amongst the most promising photovoltaic materials for energy conversion. We have studied by ab-initio calculations, using several levels of approximation - namely density functional theory including spin-orbit coupling and quasi-particle corrections by means of the GW method, as well as pseudopotential self-interaction corrections -, the role of the methylammonium…
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CH3NH3PbI3 perovskite is nowadays amongst the most promising photovoltaic materials for energy conversion. We have studied by ab-initio calculations, using several levels of approximation - namely density functional theory including spin-orbit coupling and quasi-particle corrections by means of the GW method, as well as pseudopotential self-interaction corrections -, the role of the methylammonium orientation on the electronic structure of this perovskite. We have considered many molecular arrangements within 2x2x2 supercells, showing that the relative orientation of the organic molecules is responsible for a huge band gap variation up to 2 eV. The band gap sizes are related to distortions of the PbI3 cage, which are in turn due to electrostatic interactions between this inorganic frame and the molecules. The strong dependence of the band gap on the mutual molecular orientation is confirmed at all levels of approximations. Our results suggest then that the coupling between the molecular motion and the interactions of the molecules with the inorganic cage could help to explain the widening of the absorption spectrum of CH3NH3PbI3 perovskite, consistent with the observed white spectrum.
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Submitted 9 November, 2017; v1 submitted 8 December, 2016;
originally announced December 2016.
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Separate-path electron and hole transport across pi-stacked ferroelectrics for photovoltaic applications
Authors:
Malgorzata Wawrzyniak-Adamczewska,
Malgorzata Wierzbowska
Abstract:
Electron and hole separate-path transport is theoretically found in the pi-stacked organic layers and columns. This effect might be a solution for the charge recombination problem. The building molecules, named 1,3,5-tricyano-2,4,6-tricarboxy-benzene, contain the mesogenic flat aromatic part and the terminal dipole groups which make the system ferroelectric. The diffusion path of the electrons cut…
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Electron and hole separate-path transport is theoretically found in the pi-stacked organic layers and columns. This effect might be a solution for the charge recombination problem. The building molecules, named 1,3,5-tricyano-2,4,6-tricarboxy-benzene, contain the mesogenic flat aromatic part and the terminal dipole groups which make the system ferroelectric. The diffusion path of the electrons cuts through the aromatic rings, while holes hop between the dipole groups. The transmission function and the charge mobilities, especially for the holes, are very sensitive to the distance between the molecular rings, due to the overlap of the pi-type orbitals. We verified that the separation of the diffusion paths is not destroyed by the application of the graphene leads. These features make the system suitable for the efficient solar cells, with the carrier mobilities higher than these in the organometal halide perovskites.
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Submitted 18 March, 2016; v1 submitted 11 December, 2015;
originally announced December 2015.
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In2O3 doped with hydrogen: electronic structure and optical properties from the pseudopotential Self-Interaction Corrected Density Functional Theory and the Random Phase Approximation
Authors:
Juan J. Meléndez,
Małgorzata Wierzbowska
Abstract:
We discuss the applicability of the pseudopotential-like self-interaction correction (pSIC) to the study of defect energetics and electronic structure of In2O3. Our results predict that substitutional (at oxygen sites) and interstitial (at antibonding positions) hydrogen, as well as oxygen vacancies with charges +1 and +2, are stable configurations of defects in cubic In2O3; the former form shallo…
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We discuss the applicability of the pseudopotential-like self-interaction correction (pSIC) to the study of defect energetics and electronic structure of In2O3. Our results predict that substitutional (at oxygen sites) and interstitial (at antibonding positions) hydrogen, as well as oxygen vacancies with charges +1 and +2, are stable configurations of defects in cubic In2O3; the former form shallow levels (only as substitutional defects), whereas the latter form deep levels. The band structure calculated with the pSIC shows an excellent agreement with experimental data. In particular, the gap for defect-free In2O3 is 2.85 eV, which compares fairly with the experimental range 2.3-2.9 eV. The pSIC results also point to a change from indirect to direct gaps depending on do**. In relation to the optical properties, obtained within the random phase approximation, it is shown that they are mostly affected by the presence of oxygen vacancies.
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Submitted 23 November, 2015;
originally announced November 2015.
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Cascade donor-acceptor organic ferroelectric layers, between graphene sheets, for solar cell applications
Authors:
Malgorzata Wierzbowska,
Malgorzata Wawrzyniak-Adamczewska
Abstract:
Organic ferroelectric layers sandwiched between the graphene sheets are presented as a model of the solar cell. The investigated systems display many advantageous properties: 1) the cascade energy-levels alignment, 2) simultaneous donor and acceptor character depending on the charge-carrier direction, 3) the charge-transfer excitonic type, 4) the induced polarization of the electrodes, leading to…
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Organic ferroelectric layers sandwiched between the graphene sheets are presented as a model of the solar cell. The investigated systems display many advantageous properties: 1) the cascade energy-levels alignment, 2) simultaneous donor and acceptor character depending on the charge-carrier direction, 3) the charge-transfer excitonic type, 4) the induced polarization of the electrodes, leading to a substantial work-function change of the anode and cathode - around +/-1.5 eV, respectively.
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Submitted 11 May, 2016; v1 submitted 18 October, 2015;
originally announced October 2015.
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New memory devices based on the proton transfer process
Authors:
Malgorzata Wierzbowska
Abstract:
Memory devices operating due to the fast proton transfer (PT) process are proposed by means of the first-principles calculations. Writing an information is performed using the electrostatic potential of the scanning tunneling microscopy (STM). Reading an information is based on the effect of the local magnetization induced at the zigzag graphene nanoribbon (Z-GNR) edge - saturated with oxygen or t…
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Memory devices operating due to the fast proton transfer (PT) process are proposed by means of the first-principles calculations. Writing an information is performed using the electrostatic potential of the scanning tunneling microscopy (STM). Reading an information is based on the effect of the local magnetization induced at the zigzag graphene nanoribbon (Z-GNR) edge - saturated with oxygen or the hydroxy group - and can be realized with the use of the giant magnetoresistance (GMR), magnetic tunnel junction (MTJ) or spin-transfer torque (STT) devices. The energetic barriers for the hop-forward and -backward processes can be tuned by the distance and potential of the STM tip. Thus, enabling to tailor the non-volatile logic states. The proposed system enables very dense packing of the logic cells and could be used in the random access and flash memory devices.
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Submitted 25 November, 2015; v1 submitted 21 April, 2015;
originally announced April 2015.
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Ferrimagnetism in 2D networks of porphyrin-X and -XO (X=Sc,...,Zn) with acetylene bridges
Authors:
Malgorzata Wierzbowska,
Andrzej L. Sobolewski
Abstract:
Magnetism in 2D networks of the acetylene-bridged transition metal porphyrins M(P)-2(C-C)-2 (denoted P-TM), and oxo-TM-porphyrins OM(P)-2(C-C)-2 (denoted P-TMO), is studied with the density functional theory (DFT) and the self-interaction corrected pseudopotential scheme (pSIC). Addition of oxygen lowers magnetism of P-TMO with respect to the corresponding P-TM for most of the first-half $3d$-row…
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Magnetism in 2D networks of the acetylene-bridged transition metal porphyrins M(P)-2(C-C)-2 (denoted P-TM), and oxo-TM-porphyrins OM(P)-2(C-C)-2 (denoted P-TMO), is studied with the density functional theory (DFT) and the self-interaction corrected pseudopotential scheme (pSIC). Addition of oxygen lowers magnetism of P-TMO with respect to the corresponding P-TM for most of the first-half $3d$-row TMs. In contrast, binding O with the second-half $3d$-row TMs or Sc increases the magnetic moments. Ferrimagnetism is found for the porphyrin networks with the TMs from V to Co and also for these cases with oxygen. This is a long-range effect of the delocalized spin-polarization, extended even to the acetylene bridges.
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Submitted 23 October, 2015; v1 submitted 19 February, 2015;
originally announced February 2015.
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Contacts for organic switches with carbon-nanotube leads
Authors:
Malgorzata Wierzbowska,
Michal F. Rode,
Mikolaj Sadek,
Andrzej L. Sobolewski
Abstract:
Molecular devices, as future electronics, seek low-resistivity contacts for the energy saving. At the same time, the contacts should intensify desired properties of tailored electronic elements. In this work, we focus our attention on two classes of organic switches connected to carbon-nanotube leads and operating due to photo- or field-induced proton transfer (PT) process. By means of the first-p…
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Molecular devices, as future electronics, seek low-resistivity contacts for the energy saving. At the same time, the contacts should intensify desired properties of tailored electronic elements. In this work, we focus our attention on two classes of organic switches connected to carbon-nanotube leads and operating due to photo- or field-induced proton transfer (PT) process. By means of the first-principles atomistic simulations of the ballistic conductance, we search for atomic contacts which strengthen diversity of the two swapped I-V characteristics between two tautomers of a given molecular system. We emphasize, that the low-resistive character of the contacts is not necessarily in accordance with the switching properties. Very often, the higher-current flow makes it more difficult to distinguish between the logic states of the molecular device. Instead, the resistive contacts multiply a current gear at the tautomeric transition to a larger extent. The low- and high-bias work regimes set additional conditions, which are fulfilled by different contacts. In some cases, the peroxide contacts or the direct connection to the tube perform better than the popular sulfur contact. Additionally, we find that the switching-bias value is not an inherent property of the conducting molecule, but it strongly depends on the chosen contacts.
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Submitted 31 May, 2015; v1 submitted 17 December, 2014;
originally announced December 2014.
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Multipeak Negative Differential Resistance from Interplay between Nonlinear Stark Effect and Double-Branch Current Flow
Authors:
Mikolaj Sadek,
Malgorzata Wierzbowska,
Michal F. Rode,
Andrzej L. Sobolewski
Abstract:
Multipeak negative differential resistance (NDR) molecular devices are designed from first principles. The effect of NDR is associated with the non-linear Stark shifts and the electron localization within the conductive region and contacts. Deep I(V)-curve well is formed when the aromatic molecule, containing intramolecular hydrogen bond, is connected to each lead by the double-branch contacts. Th…
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Multipeak negative differential resistance (NDR) molecular devices are designed from first principles. The effect of NDR is associated with the non-linear Stark shifts and the electron localization within the conductive region and contacts. Deep I(V)-curve well is formed when the aromatic molecule, containing intramolecular hydrogen bond, is connected to each lead by the double-branch contacts. This effect occurs at the same voltage where a single-junction case exhibits only a flat step in the current characteristics. The multipeak oscillations arise from the mutual effect of the Stark shifts located at the electron-rich contacts and parts of the molecule - this opens the route for further tailoring the desired properties.
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Submitted 5 October, 2014; v1 submitted 10 September, 2014;
originally announced September 2014.
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Spin-dependent Seebeck effect and huge growth of thermoelectric parameters at band edges in H- and F-doped graphene, free-standing and deposited on 4H-SiC(0001) C-face
Authors:
Malgorzata Wierzbowska,
Adam Dominiak
Abstract:
Graphene halfly doped with H or F possesses local magnetization at the undoped C sites. Thus the Seebeck coefficient is different for each spin channel and its sign also changes depending on the spin polarization. Deposition of doped graphene on the C-face 4H-SiC(0001) with two buffer layers substantially varies the electronic and thermoelectric properties. These properties are efficiently calcula…
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Graphene halfly doped with H or F possesses local magnetization at the undoped C sites. Thus the Seebeck coefficient is different for each spin channel and its sign also changes depending on the spin polarization. Deposition of doped graphene on the C-face 4H-SiC(0001) with two buffer layers substantially varies the electronic and thermoelectric properties. These properties are efficiently calculated from the semiclassical Boltzmann equations, using the maximally-localized Wannier-functions interpolation of the band structures obtained with the density-functional theory. Our results indicate large growth of the thermopower and the ZT efficiency at the band edges. We show in the model discussion that this phenomenon is more general and applies also to other systems than graphene. It gives prospect for develo** new spintronic devices working in the band-edge regime.
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Submitted 23 August, 2014; v1 submitted 19 March, 2014;
originally announced March 2014.
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Effect of C-face 4H-SiC(0001) deposition on thermopower of single and multilayer graphene in AA, AB and ABC stacking
Authors:
Malgorzata Wierzbowska,
Adam Dominiak,
Giovanni Pizzi
Abstract:
The Seebeck coefficient in multilayer graphene is investigated within the density-functional theory, using the semiclassical Boltzmann equations and interpolating the bands in a maximally-localized Wannier functions basis set. We compare various graphene stackings (AA, AB and ABC) both free-standing and deposited on a $4H$-SiC(0001) C-terminated substrate. We find that the presence of the SiC subs…
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The Seebeck coefficient in multilayer graphene is investigated within the density-functional theory, using the semiclassical Boltzmann equations and interpolating the bands in a maximally-localized Wannier functions basis set. We compare various graphene stackings (AA, AB and ABC) both free-standing and deposited on a $4H$-SiC(0001) C-terminated substrate. We find that the presence of the SiC substrate can significantly affect the thermopower properties of graphene layers, depending on the stacking, providing a promising way to tailor efficient graphene-based devices.
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Submitted 12 September, 2014; v1 submitted 5 March, 2014;
originally announced March 2014.
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CVD Formation of Graphene on SiC Surface in Argon Atmosphere
Authors:
Malgorzata Wierzbowska,
Adam Dominiak,
Kamil Tokar
Abstract:
We investigate the microscopic processes leading to graphene growth by the chemical vapor deposition of propane in the argon atmosphere at the SiC surface. Experimentally, it is known that the presence of argon fastens the dehydrogenation processes at the surface, in high temperature of about 2000K. We perform ab-initio calculations, at zero temperature, to check whether chemical reactions can exp…
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We investigate the microscopic processes leading to graphene growth by the chemical vapor deposition of propane in the argon atmosphere at the SiC surface. Experimentally, it is known that the presence of argon fastens the dehydrogenation processes at the surface, in high temperature of about 2000K. We perform ab-initio calculations, at zero temperature, to check whether chemical reactions can explain this phenomenon. Density functional theory and supporting quantum chemistry methods qualitatively describe formation of the graphene wafers. We find that the 4H-SiC(0001) surface exibits large catalytic effect in the adsorption process of hydrocarbon molecules, this is also supported by preliminary molecular dynamics results. Existence of the ArH+ molecule, and an observation from the Raman spectra that the negative charge transfers into the SiC surface, would suggest that presence of argon atoms leads to a deprotonization on the surface, which is necessary to obtain pure carbon add-layer. But the zero-temperature description shows that the cold environment is insufficient to promote the argon-assisted surface cleaning.
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Submitted 9 June, 2013;
originally announced June 2013.
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Contrasting Elastic Properties of Heavily B- and N-doped Graphene, with Random Distributions Including Aggregates
Authors:
Karolina Z. Milowska,
Magdalena Woinska,
Malgorzata Wierzbowska
Abstract:
We focused on elastic properties of B- and N-doped graphene in wide range of concentrations up to 20%. The Young's, bulk and shear moduli and Poisson's ratio have been calculated by means of the density functional theory for a representative set of supercells with disordered impurity patterns including aggregates. In contrast to earlier work, it is demonstrated that do** with nitrogen even stren…
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We focused on elastic properties of B- and N-doped graphene in wide range of concentrations up to 20%. The Young's, bulk and shear moduli and Poisson's ratio have been calculated by means of the density functional theory for a representative set of supercells with disordered impurity patterns including aggregates. In contrast to earlier work, it is demonstrated that do** with nitrogen even strengthens the graphene layers, whereas incorporation of boron induces large structural and morphological changes seen in simulated STM images. Young's and shear moduli increase or decrease with the do** strength for nitrogen or boron, respectively, while bulk modulus and Poisson's ratio exhibit opposite trends. Elastic properties of samples for both types of impurities are strongly related to the electronic structures, especially for heavy do** (>12%). Local arrangements of dopants and an agregation or separation of impurities play crucial role in the determination of stiffness in the investigated systems. Interestingly, these findings are opossed for B- and N-contained samples.
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Submitted 13 September, 2013; v1 submitted 8 April, 2013;
originally announced April 2013.
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Hole sp3-character and delocalization in (Ga,Mn)As revised with pSIC and MLWF approaches - newly found spin-unpolarized gap states of s-type below 1% of Mn
Authors:
Karolina Z. Milowska,
Malgorzata Wierzbowska
Abstract:
The dilute magnetic semiconductor (Ga,Mn)As is ferromagnetic in accordance with the p-d Zener model. Hole density function (HDF) localization has been previously studied by means of the density functional theory (DFT) and non-standard DFT methods; however not for do**s near 1%. We have revised (Ga,Mn)As using the DFT with the pseudopotential self-interaction correction (pSIC) and maximally-local…
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The dilute magnetic semiconductor (Ga,Mn)As is ferromagnetic in accordance with the p-d Zener model. Hole density function (HDF) localization has been previously studied by means of the density functional theory (DFT) and non-standard DFT methods; however not for do**s near 1%. We have revised (Ga,Mn)As using the DFT with the pseudopotential self-interaction correction (pSIC) and maximally-localized Wannier functions (MLWFs), which show the sp3 character of a HDF. Nature of HDF is extended - for low do**s and the pSIC, 70% of the HDF is located within the inter-impurities region, and contribution of the 3d-Mn states is 3-5% for 1-3% of Mn with the pSIC, and 11% with the DFT. We found that for do**s below 1%, the spin-unpolarized s-type impurity states segregate from the conduction band to the energy gap - in contrast to earlier publications. This implies that donor co-doped dilute samples would be both insulating and nonmagnetic.
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Submitted 5 January, 2014; v1 submitted 21 February, 2013;
originally announced February 2013.
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Poisoning of magnetism in silicon doped with Re, caused by a charge transfer from interstitials to substitutionals, by means of the self-interaction corrected density-functional approach
Authors:
Malgorzata Wierzbowska
Abstract:
The self-interaction corrected density-functional calculations are performed for Re impurities and their pairs in silicon. Rhenium ions form in the host crystal not very tight pairs, with impurities separated by one Si atom or by a distance close to two silicon bonds. Comparison of formation energies for various pairs of substitutionals, interstitials, and mixed-site impurities favours the last ty…
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The self-interaction corrected density-functional calculations are performed for Re impurities and their pairs in silicon. Rhenium ions form in the host crystal not very tight pairs, with impurities separated by one Si atom or by a distance close to two silicon bonds. Comparison of formation energies for various pairs of substitutionals, interstitials, and mixed-site impurities favours the last type. Electron transfer from the interstitial into the substitutional impurity makes the both Re sites nonmagnetic, but the p-type and the n-type co-do** revives magnetism again, the latter more efficiently.
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Submitted 12 July, 2012;
originally announced July 2012.
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Exchange interactions and Tc in rhenium doped silicon: DFT, DFT+U and Monte Carlo calculations
Authors:
Malgorzata Wierzbowska
Abstract:
Interactions between rhenium impurities in silicon are investigated by means of the density functional theory (DFT) and the DFT+U scheme. All couplings between impurities are ferromagnetic except the Re-Re dimers which in the DFT method are nonmagnetic, due to formation of the chemical bond supported by substantial relaxation of the geometry. The critical temperature is calculated by means of clas…
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Interactions between rhenium impurities in silicon are investigated by means of the density functional theory (DFT) and the DFT+U scheme. All couplings between impurities are ferromagnetic except the Re-Re dimers which in the DFT method are nonmagnetic, due to formation of the chemical bond supported by substantial relaxation of the geometry. The critical temperature is calculated by means of classical Monte Carlo (MC) simulations with the Heisenberg hamiltonian. The uniform ferromagnetic phase is obtained with the DFT exchange interactions at room temperature for the impurities concentration of 7%. With the DFT+U exchange interactions, the ferromagnetic clusters form above room temperature in MC samples containing only 3% Re.
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Submitted 12 July, 2012;
originally announced July 2012.
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Forces and atomic relaxations in the pSIC approach with ultrasoft pseudopotentials
Authors:
Malgorzata Wierzbowska,
Jacek A. Majewski
Abstract:
We present the scheme that allows for efficient calculations of forces in the framework of pseudopotential self-interaction corrected (pSIC) formulation of the density functional theory. The scheme works with norm conserving and also with ultrasoft pseudopotentials and has been implemented in the plane-wave basis code {\sc quantum espresso}. We have performed tests of the internal consistency of t…
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We present the scheme that allows for efficient calculations of forces in the framework of pseudopotential self-interaction corrected (pSIC) formulation of the density functional theory. The scheme works with norm conserving and also with ultrasoft pseudopotentials and has been implemented in the plane-wave basis code {\sc quantum espresso}. We have performed tests of the internal consistency of the derived expressions for forces considering ZnO and CeO$_2$ crystals. Further, we have performed calculations of equilibrium geometry for LaTiO$_3$, YTiO$_3$, and LaMnO$_3$ perovskites and also for Re and Mn pairs in silicon. Comparison with standard DFT and DFT+U approaches shows that in the cases where spurious self-interaction matters, the pSIC approach predicts different geometry, very often closer to the experimental data.
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Submitted 5 December, 2011;
originally announced December 2011.
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Effect of spin fluctuations on Tc from density-functional theory for superconductors
Authors:
Malgorzata Wierzbowska
Abstract:
The transverse spin fluctuations are introduced to the density functional theory for superconductors (SCDFT). Paramagnons are treated within the random phase approximation and assumed to be the same for the normal and superconducting state. The effect of spin fluctuations on Tc is studied for a few simple metals at ambient pressure and niobium at several pressures up to 80 GPa.
The transverse spin fluctuations are introduced to the density functional theory for superconductors (SCDFT). Paramagnons are treated within the random phase approximation and assumed to be the same for the normal and superconducting state. The effect of spin fluctuations on Tc is studied for a few simple metals at ambient pressure and niobium at several pressures up to 80 GPa.
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Submitted 11 June, 2005;
originally announced June 2005.
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Origins of low- and high-pressure discontinuities of $T_{c}$ in niobium
Authors:
Malgorzata Wierzbowska,
Stefano de Gironcoli,
Paolo Giannozzi
Abstract:
The discontinuities of $T_{c}$ in Niobium under pressure are examined by means of the pseudopotential plane-wave implementation of the electron-phonon coupling calculated from density-functional perturbation theory. Both low- and high-pressure discontinuities of $T_{c}$ have their origin in the Kohn anomalies and are caused by the low-frequency phonons, but the mechanism leading to the discontin…
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The discontinuities of $T_{c}$ in Niobium under pressure are examined by means of the pseudopotential plane-wave implementation of the electron-phonon coupling calculated from density-functional perturbation theory. Both low- and high-pressure discontinuities of $T_{c}$ have their origin in the Kohn anomalies and are caused by the low-frequency phonons, but the mechanism leading to the discontinuities is different in the two cases. The low-pressure anomaly is associated with a global decrease of the nesting factor in the whole Brillouin Zone and not to a visible change in the band structure. The high-pressure anomaly is instead connected with a well-pronounced change in the band structure.
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Submitted 7 February, 2006; v1 submitted 4 April, 2005;
originally announced April 2005.
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Effect of electron correlations in Pd, Ni, and Co monowires
Authors:
Malgorzata Wierzbowska,
Anna Delin,
Erio Tosatti
Abstract:
We investigated the effect of mean-field electron correlations on the band electronic structure of Co, Ni, and Pd ultra-thin monatomic nanowires, at the breaking point, by means of density-functional calculations in the self-interaction corrected LDA approach (LDA+SIC) and alternatively by the LDA+$U$ scheme. We find that adding static electron correlations increases the magnetic moment in Pd mo…
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We investigated the effect of mean-field electron correlations on the band electronic structure of Co, Ni, and Pd ultra-thin monatomic nanowires, at the breaking point, by means of density-functional calculations in the self-interaction corrected LDA approach (LDA+SIC) and alternatively by the LDA+$U$ scheme. We find that adding static electron correlations increases the magnetic moment in Pd monowires, but has negligible effect on the magnetic moment in Co and Ni. Furthermore, the number of $d$-dominated conductance channels decreases somewhat compared to the LDA value, but the number of $s$-dominated channels is unaffected, and remains equal to one per spin.
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Submitted 6 May, 2005; v1 submitted 10 December, 2004;
originally announced December 2004.
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Condensation energy of the homogeneous electron gas from the density functional theory for superconductors
Authors:
M. Wierzbowska,
J. W. Krogh
Abstract:
The condensation energy of the homogeneous electron gas is calculated within the density functional theory for superconductors. Purely electronic considerations include the exchange energy exactly and the correlation energy on a level of the random phase approximation. The singlet superconductivity is assumed, and the Coulomb interaction is studied with a model pairing potential at the angular m…
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The condensation energy of the homogeneous electron gas is calculated within the density functional theory for superconductors. Purely electronic considerations include the exchange energy exactly and the correlation energy on a level of the random phase approximation. The singlet superconductivity is assumed, and the Coulomb interaction is studied with a model pairing potential at the angular momentum up to $l$=9 and at densities 1$\leq$$r_s$$\leq$10. The homogeneous gas remains nonsuperconducting up to $r_s$$\simeq$9. Very weak negative value of the condensation energy has been found for f-waves and higher-$l$ pairing at $r_s$=10.
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Submitted 22 November, 2004; v1 submitted 22 June, 2004;
originally announced June 2004.
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Different origin of the ferromagnetic order in (Ga,Mn)As and (Ga,Mn)N
Authors:
Malgorzata Wierzbowska,
Daniel Sanchez-Portal,
Stefano Sanvito
Abstract:
The mechanism for the ferromagnetic order of (Ga,Mn)As and (Ga,Mn)N is extensively studied over a vast range of Mn concentrations. We calculate the electronic structures of these materials using density functional theory in both the local spin density approximation and the LDA+U scheme, that we have now implemented in the code SIESTA.
For (Ga,Mn)As, the LDA+U approach leads to a hole mediated…
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The mechanism for the ferromagnetic order of (Ga,Mn)As and (Ga,Mn)N is extensively studied over a vast range of Mn concentrations. We calculate the electronic structures of these materials using density functional theory in both the local spin density approximation and the LDA+U scheme, that we have now implemented in the code SIESTA.
For (Ga,Mn)As, the LDA+U approach leads to a hole mediated picture of the ferromagnetism, with an exchange constant $Nβ$ =~ -2.8 eV. This is smaller than that obtained with LSDA, which overestimates the exchange coupling between Mn ions and the As $p$ holes.
In contrast, the ferromagnetism in wurtzite (Ga,Mn)N is caused by the double-exchange mechanism, since a hole of strong $d$ character is found at the Fermi level in both the LSDA and the LDA+U approaches. In this case the coupling between the Mn ions decays rapidly with the Mn-Mn separation. This suggests a two phases picture of the ferromagnetic order in (Ga,Mn)N, with a robust ferromagnetic phase at large Mn concentration coexisting with a diluted weak ferromagnetic phase.
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Submitted 21 June, 2004;
originally announced June 2004.
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Multiplet Structures of Charged Fullerenes
Authors:
Malgorzata Wierzbowska,
Martin Lueders,
Erio Tosatti
Abstract:
We calculated multiplet splittings for positively and negatively charged fullerene ions within the CAS SCF method, and extracted model parameters for the intramolecular Hamiltonian. The method treats correctly the symmetry of ground and excited states for partially occupied degenerate molecular orbitals. We compare our results to previous calculations by the LDA, MNDO and model SCF methods. The…
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We calculated multiplet splittings for positively and negatively charged fullerene ions within the CAS SCF method, and extracted model parameters for the intramolecular Hamiltonian. The method treats correctly the symmetry of ground and excited states for partially occupied degenerate molecular orbitals. We compare our results to previous calculations by the LDA, MNDO and model SCF methods. The multiplet averaged Coulomb parameter U is about 3.1 eV for electrons and 3.2 eV for holes. The Hund's rule exchange parameter J is found to be 113 meV for electrons and 192 meV for holes.
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Submitted 27 May, 2004; v1 submitted 17 May, 2004;
originally announced May 2004.
