Development of a timing chip prototype in 110 nm CMOS technology
Authors:
Matias Senger,
Lea Caminada,
Benjamin Kilminster,
Anna Macchiolo,
Beat Meier,
Stephan Wiederkehr
Abstract:
We present a readout chip prototype for future pixel detectors with timing capabilities. The prototype is intended for characterizing 4D pixel arrays with a pixel size of $100\times100~μ\text{m}^2$, where the sensors are Low Gain Avalanche Diodes (LGADs). The long-term focus is towards a possible replacement of disks in the extended forward pixel system (TEPX) of the CMS experiment during the High…
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We present a readout chip prototype for future pixel detectors with timing capabilities. The prototype is intended for characterizing 4D pixel arrays with a pixel size of $100\times100~μ\text{m}^2$, where the sensors are Low Gain Avalanche Diodes (LGADs). The long-term focus is towards a possible replacement of disks in the extended forward pixel system (TEPX) of the CMS experiment during the High Luminosity LHC (HL-LHC). The requirements for this ASIC are the incorporation of a Time to Digital Converter (TDC) within each pixel, low power consumption, and radiation tolerance up to $5\times10^{15}~n_\text{eq}\text{~cm}^{-2}$ to withstand the radiation levels in the innermost detector modules for $3000 \text{fb}^{-1}$ of the HL-LHC (in the TEPX). A prototype has been designed and produced in 110~nm CMOS technology at LFoundry and UMC with different versions of TDC structures, together with a front end circuitry to interface with the sensors. The design of the TDC will be discussed, with the test set-up for the measurements, and the first results comparing the performance of the different structures.
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Submitted 13 February, 2023;
originally announced February 2023.
First study of small-cell 3D Silicon Pixel Detectors for the High Luminosity LHC
Authors:
E. Currás,
J. Duarte-Campderrós,
M. Fernández,
A. García,
G. Gómez,
J. González,
R. Jaramillo,
D. Moya,
I. Vila,
S. Hidalgo,
M. Manna,
G. Pellegrini,
D. Quirion,
D. Pitzl,
A. Ebrahimi,
T. Rohe,
S. Wiederkehr
Abstract:
A study of 3D pixel sensors of cell size 50 μm x 50 μm fabricated at IMB-CNM using double-sided n-on-p 3D technology is presented. Sensors were bump-bonded to the ROC4SENS readout chip. For the first time in such a small-pitch hybrid assembly, the sensor response to ionizing radiation in a test beam of 5.6 GeV electrons was studied. Results for non-irradiated sensors are presented, including effic…
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A study of 3D pixel sensors of cell size 50 μm x 50 μm fabricated at IMB-CNM using double-sided n-on-p 3D technology is presented. Sensors were bump-bonded to the ROC4SENS readout chip. For the first time in such a small-pitch hybrid assembly, the sensor response to ionizing radiation in a test beam of 5.6 GeV electrons was studied. Results for non-irradiated sensors are presented, including efficiency, charge sharing, signal-to-noise, and resolution for different incidence angles.
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Submitted 4 June, 2018;
originally announced June 2018.
