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On-demand source of dual-rail photon pairs based on chiral interaction in a nanophotonic waveguide
Authors:
Freja T. Østfeldt,
Eva M. González-Ruiz,
Nils Hauff,
Ying Wang,
Andreas D. Wieck,
Arne Ludwig,
Rüdiger Schott,
Leonardo Midolo,
Anders S. Sørensen,
Ravitej Uppu,
Peter Lodahl
Abstract:
Entanglement is the fuel of advanced quantum technology. It is for instance consumed in measurement-based quantum computing and allows loss-tolerant encoding of quantum information. In photonics, entanglement has traditionally been generated probabilistically, requiring massive multiplexing for scaling up to many photons. An alternative approach utilizes quantum emitters in nanophotonic devices fo…
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Entanglement is the fuel of advanced quantum technology. It is for instance consumed in measurement-based quantum computing and allows loss-tolerant encoding of quantum information. In photonics, entanglement has traditionally been generated probabilistically, requiring massive multiplexing for scaling up to many photons. An alternative approach utilizes quantum emitters in nanophotonic devices for deterministic generation of single photons, which an be extended to two- and multi-photon generation on demand. The proposed polarization-entanglement sources are, however, incompatible with spatial dual-rail qubit encoding, which is preferred in photonic quantum computing realized in scalable integrated photonic circuits. Here we propose and experimentally realize an on-demand source of dual-rail photon pairs using a quantum dot in a planar nanophotonic waveguide. The source exploits the cascaded decay of a biexciton state and chiral light-matter coupling to achieve deterministic generation of spatial dual-rail Bell pairs with the amount of entanglement determined by the chirality. The operational principle can readily be extended to multi-photon entanglement generation, and such sources may be interfaced with advanced photonic-integrated circuits, e.g., for efficient preparation of entanglement resource states for photonic quantum computing.
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Submitted 17 January, 2022; v1 submitted 8 September, 2021;
originally announced September 2021.
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An integrated whispering-gallery-mode resonator for solid-state coherent quantum photonics
Authors:
Arianne Brooks,
Xiao-Liu Chu,
Zhe Liu,
Rudiger Schott,
Arne Ludwig,
Andreas D. Wieck,
Leonardo Midolo,
Peter Lodahl,
Nir Rotenberg
Abstract:
Tailored photonic cavities allow enhancing light-matter interaction ultimately to create a fully coherent quantum interface. Here, we report on an integrated microdisk cavity containing self-assembled quantum dots to coherently route photons between different access waveguides. We measure a Purcell factor of $F_{exp}=6.9\pm0.9$ for a cavity quality factor of about 10,000, allowing us to observe cl…
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Tailored photonic cavities allow enhancing light-matter interaction ultimately to create a fully coherent quantum interface. Here, we report on an integrated microdisk cavity containing self-assembled quantum dots to coherently route photons between different access waveguides. We measure a Purcell factor of $F_{exp}=6.9\pm0.9$ for a cavity quality factor of about 10,000, allowing us to observe clear signatures of coherent scattering of photons by the quantum dots. We show how this integrated system can coherently re-route photons between the drop and bus ports, and how this routing is controlled by detuning the quantum dot and resonator, or through the strength of the excitation beam, where a critical photon number less than one photon per lifetime is required. We discuss the strengths and limitations of this approach, focusing on how the coherent scattering and single-photon nonlinearity can be used to increase the efficiency of quantum devices such as routers or Bell-state analyzers.
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Submitted 27 July, 2021; v1 submitted 26 July, 2021;
originally announced July 2021.
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In-flight distribution of an electron within a surface acoustic wave
Authors:
Hermann Edlbauer,
Junliang Wang,
Shunsuke Ota,
Americ Richard,
Baptiste Jadot,
Pierre-André Mortemousque,
Yuma Okazaki,
Shuji Nakamura,
Tetsuo Kodera,
Nobu-Hisa Kaneko,
Arne Ludwig,
Andreas D. Wieck,
Matias Urdampilleta,
Tristan Meunier,
Christopher Bäuerle,
Shintaro Takada
Abstract:
Surface acoustic waves (SAW) have large potential to realize quantum-optics-like experiments with single flying electrons employing their spin or charge degree of freedom. For such quantum applications, highly efficient trap** of the electron in a specific moving quantum dot (QD) of a SAW train plays a key role. Probabilistic transport over multiple moving minima would cause uncertainty in synch…
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Surface acoustic waves (SAW) have large potential to realize quantum-optics-like experiments with single flying electrons employing their spin or charge degree of freedom. For such quantum applications, highly efficient trap** of the electron in a specific moving quantum dot (QD) of a SAW train plays a key role. Probabilistic transport over multiple moving minima would cause uncertainty in synchronisation that is detrimental for coherence of entangled flying electrons and in-flight quantum operations. It is thus of central importance to identify the device parameters enabling electron transport within a single SAW minimum. A detailed experimental investigation of this aspect is so far missing. Here we fill this gap by demonstrating time-of-flight measurements for a single electron that is transported via a SAW train between distant stationary QDs. Our measurements reveal the in-flight distribution of the electron within the moving acousto-electric quantum dots of the SAW train. Increasing the acousto-electric amplitude, we observe the threshold necessary to confine the flying electron at a specific, deliberately chosen SAW minimum. Investigating the effect of a barrier along the transport channel, we also benchmark the robustness of SAW-driven electron transport against stationary potential variations. Our results pave the way for highly controlled transport of electron qubits in a SAW-driven platform for quantum experiments.
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Submitted 24 September, 2021; v1 submitted 20 July, 2021;
originally announced July 2021.
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Heat-Driven Electron-Motion in a Nanoscale Electronic Circuit
Authors:
Shintaro Takada,
Giorgos Georgiou,
Everton Arrighi,
Hermann Edlbauer,
Yuma Okazaki,
Shuji Nakamura,
Arne Ludwig,
Andreas D. Wieck,
Michihisa Yamamoto,
Christopher Bäuerle,
Nobu-Hisa Kaneko
Abstract:
We study the interaction between two closely spaced but electrically isolated quasi-one-dimensional electrical wires by a drag experiment. In this work we experimentally demonstrate the generation of current in an unbiased (drag) wire, which results from the interactions with a neighboring biased (drive) wire. The direction of the drag current depends on the length of the one-dimensional wire with…
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We study the interaction between two closely spaced but electrically isolated quasi-one-dimensional electrical wires by a drag experiment. In this work we experimentally demonstrate the generation of current in an unbiased (drag) wire, which results from the interactions with a neighboring biased (drive) wire. The direction of the drag current depends on the length of the one-dimensional wire with respect to the position of the barrier in the drag wire. When we additionally form a potential barrier in the drive wire, the direction of the drag current is determined by the relative position of the two barriers. We interpret this behavior in terms of electron excitations by phonon-mediated interactions between the two wires in presence of the electron scattering inside the drive wire.
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Submitted 25 October, 2021; v1 submitted 19 July, 2021;
originally announced July 2021.
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Quantum Interference of Identical Photons from Remote GaAs Quantum Dots
Authors:
Liang Zhai,
Giang N. Nguyen,
Clemens Spinnler,
Julian Ritzmann,
Matthias C. Löbl,
Andreas D. Wieck,
Arne Ludwig,
Alisa Javadi,
Richard J. Warburton
Abstract:
Photonic quantum technology provides a viable route to quantum communication, quantum simulation, and quantum information processing. Recent progress has seen the realisation of boson sampling using 20 single-photons and quantum key distribution over hundreds of kilometres. Scaling the complexity requires architectures containing multiple photon-sources, photon-counters, and a large number of indi…
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Photonic quantum technology provides a viable route to quantum communication, quantum simulation, and quantum information processing. Recent progress has seen the realisation of boson sampling using 20 single-photons and quantum key distribution over hundreds of kilometres. Scaling the complexity requires architectures containing multiple photon-sources, photon-counters, and a large number of indistinguishable single photons. Semiconductor quantum dots are bright and fast sources of coherent single-photons. For applications, a significant roadblock is the poor quantum coherence upon interfering single photons created by independent quantum dots. Here, we demonstrate two-photon interference with near-unity visibility ($93.0\pm0.8$)\% using photons from two completely separate GaAs quantum dots. The experiment retains all the emission into the zero-phonon-line -- only the weak phonon-sideband is rejected -- and temporal post-selection is not employed. Exploiting the quantum interference, we demonstrate a photonic controlled-not circuit and an entanglement with fidelity ($85.0\pm 1.0$)\% between photons of different origins. The two-photon interference visibility is high enough that the entanglement fidelity is well above the classical threshold. The high mutual-coherence of the photons stems from high-quality materials, a diode-structure, and the relatively large quantum dot size. Our results establish a platform, GaAs QDs, for creating coherent single photons in a scalable way.
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Submitted 14 February, 2023; v1 submitted 7 June, 2021;
originally announced June 2021.
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Real-time observation of charge-spin cooperative dynamics driven by a nonequilibrium phonon environment
Authors:
Kazuyuki Kuroyama,
Sadashige Matsuo,
Jo Muramoto,
Shunsuke Yabunaka,
Sasha R. Valentin,
Arne Ludwig,
Andreas D. Wieck,
Yasuhiro Tokura,
Seigo Tarucha
Abstract:
Quantum dots are recognized as a suitable platform for studying thermodynamic phenomena involving single electronic charges and spins in nano-scale devices. However, such a thermodynamic system is usually driven by electron reservoirs at different temperatures, not by a lattice temperature gradient. We report on experimental observations of charge-spin cooperative dynamics in transitions of two-el…
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Quantum dots are recognized as a suitable platform for studying thermodynamic phenomena involving single electronic charges and spins in nano-scale devices. However, such a thermodynamic system is usually driven by electron reservoirs at different temperatures, not by a lattice temperature gradient. We report on experimental observations of charge-spin cooperative dynamics in transitions of two-electron spin states in a GaAs double quantum dot located in a non-equilibrium phonon environment. Enhancements in the spin-flip processes are observed, originating from phonon excitation combined with the spin-orbit interaction. In addition, due to the spatial gradient of phonon density between the dots, the spin-flip rate during an inter-dot electron tunnel from a hot to a cold dot is more enhanced than in the other direction, resulting in accumulation of parallel spin states in the double dot.
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Submitted 2 June, 2021;
originally announced June 2021.
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Optically driving the radiative Auger transition
Authors:
Clemens Spinnler,
Liang Zhai,
Giang N. Nguyen,
Julian Ritzmann,
Andreas D. Wieck,
Arne Ludwig,
Alisa Javadi,
Doris E. Reiter,
Paweł Machnikowski,
Richard J. Warburton,
Matthias C. Löbl
Abstract:
In a radiative Auger process, optical decay is accompanied by simultaneous excitation of other carriers. The radiative Auger process gives rise to weak red-shifted satellite peaks in the optical emission spectrum. These satellite peaks have been observed over a large spectral range: in the X-ray emission of atoms; close to visible frequencies on donors in semiconductors and quantum emitters; and a…
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In a radiative Auger process, optical decay is accompanied by simultaneous excitation of other carriers. The radiative Auger process gives rise to weak red-shifted satellite peaks in the optical emission spectrum. These satellite peaks have been observed over a large spectral range: in the X-ray emission of atoms; close to visible frequencies on donors in semiconductors and quantum emitters; and at infrared frequencies as shake-up lines in two-dimensional systems. So far, all the work on the radiative Auger process has focussed on detecting the spontaneous emission. However, the fact that the radiative Auger process leads to photon emission suggests that the transition can also be optically excited. In such an inverted radiative Auger process, excitation would correspond to simultaneous photon absorption and electronic de-excitation. Here, we demonstrate optical driving of the radiative Auger transition on a trion in a semiconductor quantum dot. The radiative Auger and the fundamental transition together form a $Λ$-system. On driving both transitions of this $Λ$-system simultaneously, we observe a reduction of the fluorescence signal by up to $70\%$. Our results demonstrate a type of optically addressable transition connecting few-body Coulomb interactions to quantum optics. The results open up the possibility of carrying out THz spectroscopy on single quantum emitters with all the benefits of optics: coherent laser sources, efficient and fast single-photon detectors. In analogy to optical control of an electron spin, the $Λ$-system between the radiative Auger and the fundamental transitions allows optical control of the emitters' orbital degree of freedom.
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Submitted 7 May, 2021;
originally announced May 2021.
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Strong enhancement of heavy-hole Landé factor $q$ in InGaAs symmetric quantum dots revealed by coherent optical spectroscopy
Authors:
A. V. Trifonov,
I. A. Akimov,
L. E. Golub,
E. L. Ivchenko,
I. A. Yugova,
A. N. Kosarev,
S. E. Scholz,
C. Sgroi,
A. Ludwig,
A. D. Wieck,
D. R. Yakovlev,
M. Bayer
Abstract:
We reveal the existence of a large in-plane heavy-hole $g$ factor in symmetric self-assembled (001) (In,Ga)As/GaAs quantum dots due to war** of valence band states. This war** dominates over the well-established mechanism associated with a reduced symmetry of quantum dots and the corresponding mixing of heavy-hole and light-hole states. The effect of band war** is manifested in a unique angu…
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We reveal the existence of a large in-plane heavy-hole $g$ factor in symmetric self-assembled (001) (In,Ga)As/GaAs quantum dots due to war** of valence band states. This war** dominates over the well-established mechanism associated with a reduced symmetry of quantum dots and the corresponding mixing of heavy-hole and light-hole states. The effect of band war** is manifested in a unique angular dependence of a trion photon echo signal on the direction of external magnetic field with respect to the sample axes. It results in a uniform magnetic-field-induced optical anisotropy for the entire quantum dot ensemble which is a prerequisite for realization of spin quantum memories and spin-photon entanglement in the ensemble.
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Submitted 25 March, 2021;
originally announced March 2021.
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Tuning the mode-splitting of a semiconductor microcavity with uniaxial stress
Authors:
Natasha Tomm,
Alexander R. Korsch,
Alisa Javadi,
Daniel Najer,
Rüdiger Schott,
Sascha R. Valentin,
Andreas D. Wieck,
Arne Ludwig,
Richard J. Warburton
Abstract:
A splitting of the fundamental optical modes in micro/nano-cavities comprising semiconductor heterostructures is commonly observed. Given that this splitting plays an important role for the light-matter interaction and hence quantum technology applications, a method for controlling the mode-splitting is important. In this work we use an open microcavity composed of a "bottom" semiconductor distrib…
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A splitting of the fundamental optical modes in micro/nano-cavities comprising semiconductor heterostructures is commonly observed. Given that this splitting plays an important role for the light-matter interaction and hence quantum technology applications, a method for controlling the mode-splitting is important. In this work we use an open microcavity composed of a "bottom" semiconductor distributed Bragg reflector (DBR) incorporating an n-i-p heterostructure, paired with a "top" curved dielectric DBR. We measure the mode-splitting as a function of wavelength across the stopband. We demonstrate a reversible in-situ technique to tune the mode-splitting by applying uniaxial stress to the semiconductor DBR. The method exploits the photoelastic effect of the semiconductor materials. We achieve a maximum tuning of $\sim$11 GHz. The stress applied to the heterostructure is determined by observing the photoluminescence of quantum dots embedded in the sample, converting a spectral shift to a stress via deformation potentials. A thorough study of the mode-splitting and its tuning across the stop-band leads to a quantitative understanding of the mechanism behind the results.
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Submitted 18 February, 2021;
originally announced February 2021.
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Electroabsorption in gated GaAs nanophotonic waveguides
Authors:
Ying Wang,
Ravitej Uppu,
Xiaoyan Zhou,
Camille Papon,
Sven Scholz,
Andreas D. Wieck,
Arne Ludwig,
Peter Lodahl,
Leonardo Midolo
Abstract:
We report on the analysis of electroabsorption in thin GaAs/Al$_{0.3}$Ga$_{0.7}$As nanophotonic waveguides with an embedded $p$-$i$-$n$ junction. By measuring the transmission through waveguides of different lengths, we derive the propagation loss as a function of electric field, wavelength, and temperature. The results are in good agreement with the Franz-Keldysh model of electroabsorption extend…
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We report on the analysis of electroabsorption in thin GaAs/Al$_{0.3}$Ga$_{0.7}$As nanophotonic waveguides with an embedded $p$-$i$-$n$ junction. By measuring the transmission through waveguides of different lengths, we derive the propagation loss as a function of electric field, wavelength, and temperature. The results are in good agreement with the Franz-Keldysh model of electroabsorption extending over 200 meV below the GaAs bandgap, i.e. in the 910--970 nm wavelength range. We find a pronounced residual absorption in forward bias, which we attribute to Fermi-level pinning at the waveguide surface, producing over 20 dB/mm loss at room temperature. These results are essential for understanding the origin of loss in nanophotonic devices operating in the emission range of self-assembled InAs semiconductor quantum dots, towards the realization of scalable quantum photonic integrated circuits.
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Submitted 11 February, 2021;
originally announced February 2021.
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Enhanced spin coherence while displacing electron in a 2D array of quantum dots
Authors:
Pierre-André Mortemousque,
Baptiste Jadot,
Emmanuel Chanrion,
Vivien Thiney,
Christopher Bäuerle,
Arne Ludwig,
Andreas D. Wieck,
Matias Urdampilleta,
Tristan Meunier
Abstract:
The ability to shuttle coherently individual electron spins in arrays of quantum dots is a key procedure for the development of scalable quantum information platforms. It allows the use of sparsely populated electron spin arrays, envisioned to efficiently tackle the one- and two-qubit gate challenges. When the electrons are displaced in an array, they are submitted to site-dependent environment in…
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The ability to shuttle coherently individual electron spins in arrays of quantum dots is a key procedure for the development of scalable quantum information platforms. It allows the use of sparsely populated electron spin arrays, envisioned to efficiently tackle the one- and two-qubit gate challenges. When the electrons are displaced in an array, they are submitted to site-dependent environment interactions such as hyperfine coupling with substrate nuclear spins. Here, we demonstrate that the electron multi-directional displacement in a $3\times 3$ array of tunnel coupled quantum dots enhances the spin coherence time via the motional narrowing phenomenon. More specifically, up to 10 configurations are explored by the electrons to study the impact of the displacement on spin dynamics. An increase of the coherence time by a factor up to 10 is observed in case of fast and repetitive displacement. The physical mechanism responsible for the loss of coherence induced by displacement is quantitatively captured by a simple model and its implications on spin coherence properties during the electron displacement are discussed in the context of large-scale quantum circuits.
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Submitted 15 January, 2021;
originally announced January 2021.
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Bright electrically controllable quantum-dot-molecule devices fabricated by in-situ electron-beam lithography
Authors:
Johannes Schall,
Marielle Deconinck,
Nikolai Bart,
Matthias Florian,
Martin von Helversen,
Christian Dangel,
Ronny Schmidt,
Lucas Bremer,
Frederik Bopp,
Isabell Hüllen,
Christopher Gies,
Dirk Reuter,
Andreas D. Wieck,
Sven Rodt,
Jonathan J. Finley,
Frank Jahnke,
Arne Ludwig,
Stephan Reitzenstein
Abstract:
Self-organized semiconductor quantum dots represent almost ideal two-level systems, which have strong potential to applications in photonic quantum technologies. For instance, they can act as emitters in close-to-ideal quantum light sources. Coupled quantum dot systems with significantly increased functionality are potentially of even stronger interest since they can be used to host ultra-stable s…
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Self-organized semiconductor quantum dots represent almost ideal two-level systems, which have strong potential to applications in photonic quantum technologies. For instance, they can act as emitters in close-to-ideal quantum light sources. Coupled quantum dot systems with significantly increased functionality are potentially of even stronger interest since they can be used to host ultra-stable singlet-triplet spin qubits for efficient spin-photon interfaces and for a deterministic photonic 2D cluster-state generation. We realize an advanced quantum dot molecule (QDM) device and demonstrate excellent optical properties. The device includes electrically controllable QDMs based on stacked quantum dots in a pin-diode structure. The QDMs are deterministically integrated into a photonic structure with a circular Bragg grating using in-situ electron beam lithography. We measure a photon extraction efficiency of up to (24$\pm$4)% in good agreement with numerical simulations. The coupling character of the QDMs is clearly demonstrated by bias voltage dependent spectroscopy that also controls the orbital couplings of the QDMs and their charge state in quantitative agreement with theory. The QDM devices show excellent single-photon emission properties with a multi-photon suppression of $g^{(2)}(0) = (3.9 \pm 0.5) \cdot 10^{-3}$. These metrics make the developed QDM devices attractive building blocks for use in future photonic quantum networks using advanced nanophotonic hardware.
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Submitted 8 April, 2021; v1 submitted 10 January, 2021;
originally announced January 2021.
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Noise-robust classification of single-shot electron spin readouts using a deep neural network
Authors:
Yuta Matsumoto,
Takafumi Fujita,
Arne Ludwig,
Andreas D. Wieck,
Kazunori Komatani,
Akira Oiwa
Abstract:
Single-shot readout of charge and spin states by charge sensors such as quantum point contacts and quantum dots are essential technologies for the operation of semiconductor spin qubits. The fidelity of the single-shot readout depends both on experimental conditions such as signal-to-noise ratio, system temperature and numerical parameters such as threshold values. Accurate charge sensing schemes…
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Single-shot readout of charge and spin states by charge sensors such as quantum point contacts and quantum dots are essential technologies for the operation of semiconductor spin qubits. The fidelity of the single-shot readout depends both on experimental conditions such as signal-to-noise ratio, system temperature and numerical parameters such as threshold values. Accurate charge sensing schemes that are robust under noisy environments are indispensable for develo** a scalable fault-tolerant quantum computation architecture. In this study, we present a novel single-shot readout classification method that is robust to noises using a deep neural network (DNN). Importantly, the DNN classifier is automatically configured for spin-up and spin-down signals in any noise environment by tuning the trainable parameters using the datasets of charge transition signals experimentally obtained at a charging line. Moreover, we verify that our DNN classification is robust under noisy environment in comparison to the two conventional classification methods used for charge and spin state measurements in various quantum dot experiments.
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Submitted 12 January, 2021; v1 submitted 19 December, 2020;
originally announced December 2020.
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Optical spin control and coherence properties of acceptor bound holes in strained GaAs
Authors:
Xiayu Linpeng,
Todd Karin,
Mikhail V. Durnev,
Mikhail M. Glazov,
Rüdiger Schott,
Andreas D. Wieck,
Arne Ludwig,
Kai-Mei C. Fu
Abstract:
Hole spins in semiconductors are a potential qubit alternative to electron spins. In nuclear-spin-rich host crystals like GaAs, the hyperfine interaction of hole spins with nuclei is considerably weaker than that for electrons, leading to potentially longer coherence times. Here we demonstrate optical pum** and coherent population trap** for acceptor-bound holes in a strained GaAs epitaxial la…
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Hole spins in semiconductors are a potential qubit alternative to electron spins. In nuclear-spin-rich host crystals like GaAs, the hyperfine interaction of hole spins with nuclei is considerably weaker than that for electrons, leading to potentially longer coherence times. Here we demonstrate optical pum** and coherent population trap** for acceptor-bound holes in a strained GaAs epitaxial layer. We find $μ$s-scale longitudinal spin relaxation time T$_1$ and an inhomogeneous dephasing time T$_2^*$ of $\sim$7~ns. We attribute the spin relaxation mechanism to a combination effect of a hole-phonon interaction through the deformation potentials and a heavy-hole light-hole mixing in an in-plane magnetic field. We attribute the short T$_2^*$ to g-factor broadening due to strain inhomogeneity. T$_1$ and T$_2^*$ are quantitatively calculated based on these mechanisms and compared with the experimental results. While the hyperfine-mediated decoherence is mitigated, our results highlight the important contribution of strain to relaxation and dephasing of acceptor-bound hole spins.
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Submitted 13 December, 2020;
originally announced December 2020.
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Suppression of surface-related loss in a gated semiconductor microcavity
Authors:
Daniel Najer,
Natasha Tomm,
Alisa Javadi,
Alexander R. Korsch,
Benjamin Petrak,
Daniel Riedel,
Vincent Dolique,
Sascha R. Valentin,
Rüdiger Schott,
Andreas D. Wieck,
Arne Ludwig,
Richard J. Warburton
Abstract:
We present a surface passivation method that reduces surface-related losses by almost two orders of magnitude in a highly miniaturized GaAs open microcavity. The microcavity consists of a curved dielectric distributed Bragg reflector (DBR) with radius $\sim 10$ $μ$m paired with a GaAs-based heterostructure. The heterostructure consists of a semiconductor DBR followed by an n-i-p diode with a layer…
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We present a surface passivation method that reduces surface-related losses by almost two orders of magnitude in a highly miniaturized GaAs open microcavity. The microcavity consists of a curved dielectric distributed Bragg reflector (DBR) with radius $\sim 10$ $μ$m paired with a GaAs-based heterostructure. The heterostructure consists of a semiconductor DBR followed by an n-i-p diode with a layer of quantum dots in the intrinsic region. Free-carrier absorption in the highly doped n- and p-layers is minimized by positioning them close to a node of the vacuum electromagnetic-field. The surface, however, resides at an anti-node of the vacuum field and results in significant loss. These losses are much reduced by surface passivation. The strong dependence on wavelength implies that the main effect of the surface passivation is to eliminate the surface electric field, thereby quenching below-bandgap absorption via a Franz-Keldysh-like effect. An additional benefit is that the surface passivation reduces scattering at the GaAs surface. These results are important in other nano-photonic devices which rely on a GaAs-vacuum interface to confine the electromagnetic field.
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Submitted 17 February, 2021; v1 submitted 9 December, 2020;
originally announced December 2020.
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Gate voltage dependence of noise distribution in radio-frequency reflectometry in gallium arsenide quantum dots
Authors:
Motoya Shinozaki,
Yui Muto,
Takahito Kitada,
Takashi Nakajima,
Matthieu R. Delbecq,
Jun Yoneda,
Kenta Takeda,
Akito Noiri,
Takumi Ito,
Arne Ludwig,
Andreas D. Wieck,
Seigo Tarucha,
Tomohiro Otsuka
Abstract:
We investigate gate voltage dependence of electrical readout noise in high-speed rf reflectometry using gallium arsenide quantum dots. The fast Fourier transform spectrum from the real time measurement reflects build-in device noise and circuit noise including the resonator and the amplifier. We separate their noise spectral components by model analysis. Detail of gate voltage dependence of the fl…
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We investigate gate voltage dependence of electrical readout noise in high-speed rf reflectometry using gallium arsenide quantum dots. The fast Fourier transform spectrum from the real time measurement reflects build-in device noise and circuit noise including the resonator and the amplifier. We separate their noise spectral components by model analysis. Detail of gate voltage dependence of the flicker noise is investigated and compared to the charge sensor sensitivity. We point out that the dominant component of the readout noise changes by the measurement integration time.
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Submitted 12 January, 2021; v1 submitted 7 December, 2020;
originally announced December 2020.
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Wafer-Scale Epitaxial Modulation of Quantum Dot Density
Authors:
N. Bart,
C. Dangel,
P. Zajac,
N. Spitzer,
J. Ritzmann,
M. Schmidt,
H. G. Babin,
R. Schott,
S. R. Valentin,
S. Scholz,
Y. Wang,
R. Uppu,
D. Najer,
M. C. Löbl,
N. Tomm,
A. Javadi,
N. O. Antoniadis,
L. Midolo,
K. Müller,
R. J. Warburton,
P. Lodahl,
A. D. Wieck,
J. J. Finley,
A. Ludwig
Abstract:
Precise control of the properties of semiconductor quantum dots (QDs) is vital for creating novel devices for quantum photonics and advanced opto-electronics. Suitable low QD-density for single QD devices and experiments are challenging to control during epitaxy and are typically found only in limited regions of the wafer. Here, we demonstrate how conventional molecular beam epitaxy (MBE) can be u…
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Precise control of the properties of semiconductor quantum dots (QDs) is vital for creating novel devices for quantum photonics and advanced opto-electronics. Suitable low QD-density for single QD devices and experiments are challenging to control during epitaxy and are typically found only in limited regions of the wafer. Here, we demonstrate how conventional molecular beam epitaxy (MBE) can be used to modulate the density of optically active QDs in one- and two- dimensional patterns, while still retaining excellent quality. We find that material thickness gradients during layer-by-layer growth result in surface roughness modulations across the whole wafer. Growth on such templates strongly influences the QD nucleation probability. We obtain density modulations between 1 and 10 QDs/$μm^{2}$ and periods ranging from several millimeters down to at least a few hundred microns. This novel method is universal and expected to be applicable to a wide variety of different semiconductor material systems. We apply the method to enable growth of ultra-low noise QDs across an entire 3-inch semiconductor wafer.
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Submitted 9 December, 2021; v1 submitted 20 November, 2020;
originally announced November 2020.
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Quantum polyspectra for modeling and evaluating quantum transport measurements: A unifying approach to the strong and weak measurement regime
Authors:
M. Sifft,
A. Kurzmann,
J. Kerski,
R. Schott,
A. Ludwig,
A. D. Wieck,
A. Lorke,
M. Geller,
D. Hägele
Abstract:
Quantum polyspectra of up to fourth order are introduced for modeling and evaluating quantum transport measurements offering a powerful alternative to methods of the traditional full counting statistics. Experimental time-traces of the occupation dynamics of a single quantum dot are evaluated via simultaneously fitting their 2nd-, 3rd-, and 4th-order spectra. The scheme recovers the same electron…
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Quantum polyspectra of up to fourth order are introduced for modeling and evaluating quantum transport measurements offering a powerful alternative to methods of the traditional full counting statistics. Experimental time-traces of the occupation dynamics of a single quantum dot are evaluated via simultaneously fitting their 2nd-, 3rd-, and 4th-order spectra. The scheme recovers the same electron tunneling and spin relaxation rates as previously obtained from an analysis of the same data in terms of factorial cumulants of the full counting statistics and waiting-time distributions. Moreover, the evaluation of time-traces via quantum polyspectra is demonstrated to be feasible also in the weak measurement regime even when quantum jumps can no longer be identified from time-traces and methods related to the full counting statistics cease to be applicable. A numerical study of a double dot system shows strongly changing features in the quantum polyspectra for the transition from the weak measurement regime to the Zeno-regime where coherent tunneling dynamics is suppressed. Quantum polyspectra thus constitute a general unifying approach to the strong and weak regime of quantum measurements with possible applications in diverse fields as nano-electronics, circuit quantum electrodynamics, spin noise spectroscopy, or quantum optics.
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Submitted 28 June, 2021; v1 submitted 16 November, 2020;
originally announced November 2020.
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Suppression of nuclear spin fluctuations in an InGaAs quantum dot ensemble by GHz-pulsed optical excitation
Authors:
E. Evers,
N. E. Kopteva,
I. A. Yugova,
D. R. Yakovlev,
D. Reuter,
A. D. Wieck,
M. Bayer,
A. Greilich
Abstract:
The coherent electron spin dynamics of an ensemble of singly charged (In,Ga)As/GaAs quantum dots in a transverse magnetic field is driven by periodic optical excitation at 1 GHz repetition frequency. Despite the strong inhomogeneity of the electron $g$ factor, the spectral spread of optical transitions, and the broad distribution of nuclear spin fluctuations, we are able to push the whole ensemble…
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The coherent electron spin dynamics of an ensemble of singly charged (In,Ga)As/GaAs quantum dots in a transverse magnetic field is driven by periodic optical excitation at 1 GHz repetition frequency. Despite the strong inhomogeneity of the electron $g$ factor, the spectral spread of optical transitions, and the broad distribution of nuclear spin fluctuations, we are able to push the whole ensemble of excited spins into a single Larmor precession mode that is commensurate with the laser repetition frequency. Furthermore, we demonstrate that an optical detuning of the pump pulses from the probed optical transitions induces a directed dynamic nuclear polarization and leads to a discretization of the total magnetic field acting on the electron ensemble. Finally, we show that the highly periodic optical excitation can be used as universal tool for strongly reducing the nuclear spin fluctuations and preparation of a robust nuclear environment for subsequent manipulation of the electron spins, also at varying operation frequencies.
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Submitted 19 April, 2021; v1 submitted 13 November, 2020;
originally announced November 2020.
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Probabilistic teleportation of a quantum dot spin qubit
Authors:
Y. Kojima,
T. Nakajima,
A. Noiri,
J. Yoneda,
T. Otsuka,
K. Takeda,
S. Li,
S. D. Bartlett,
A. Ludwig,
A. D. Wieck,
S. Tarucha
Abstract:
Electron spin s in semiconductor quantum dot s have been intensively studied for implementing quantum computation and high fidelity single and two qubit operation s have recently been achieved . Quantum teleportation is a three qubit protocol exploiting quantum entanglement and it serv es as a n essential primitive for more sophisticated quantum algorithm s Here, we demonstrate a scheme for quantu…
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Electron spin s in semiconductor quantum dot s have been intensively studied for implementing quantum computation and high fidelity single and two qubit operation s have recently been achieved . Quantum teleportation is a three qubit protocol exploiting quantum entanglement and it serv es as a n essential primitive for more sophisticated quantum algorithm s Here, we demonstrate a scheme for quantum teleportation based on direct Bell measurement for a single electron spin qubit in a triple quantum dot utilizing the Pauli exclusion principle to create and detect maximally entangled state s . T he single spin polarization is teleported from the input qubit to the output qubit with a fidelity of 0.9 1 We find this fidelity is primarily limited by singlet triplet mixing which can be improved by optimizing the device parameters Our results may be extended to quantum algorithms with a larger number of se miconductor spin qubit s
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Submitted 9 November, 2020;
originally announced November 2020.
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Internal Photo Effect from a Single Quantum Emitter
Authors:
Pia Lochner,
Jens Kerski,
Annika Kurzmann,
Andreas D. Wieck,
Arne Ludwig,
Martin Geller,
Axel Lorke
Abstract:
We demonstrate by time-resolved resonance fluorescence measurements on a single self-assembled quantum dot an internal photo-effect that emits electrons from the dot by an intra-band excitation. We find a linear dependence of the optically generated emission rate on the excitation intensity and use a rate equation model to deduce the involved rates. The emission rate is tunable over several orders…
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We demonstrate by time-resolved resonance fluorescence measurements on a single self-assembled quantum dot an internal photo-effect that emits electrons from the dot by an intra-band excitation. We find a linear dependence of the optically generated emission rate on the excitation intensity and use a rate equation model to deduce the involved rates. The emission rate is tunable over several orders of magnitude by adjusting the excitation intensity. Our findings show that a process that is well known in single atom spectroscopy (i.e. photo ionization) can also be observed in the solid state. The results also quantify an important, but mostly neglected, mechanism that may fundamentally limit the coherence times in solid-state quantum optical devices.
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Submitted 21 October, 2020;
originally announced October 2020.
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Influence of molecular beam effusion cell quality on optical and electrical properties of quantum dots and quantum wells
Authors:
G. N. Nguyen,
A. R. Korsch,
M. Schmidt,
C. Ebler,
P. A. Labud,
R. Schott,
P. Lochner,
F. Brinks,
A. D. Wieck,
A. Ludwig
Abstract:
Quantum dot heterostructures with excellent low-noise properties became possible with high purity materials recently. We present a study on molecular beam epitaxy grown quantum wells and quantum dots with a contaminated aluminum evaporation cell, which introduced a high amount of impurities, perceivable in anomalies in optical and electrical measurements. We describe a way of addressing this probl…
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Quantum dot heterostructures with excellent low-noise properties became possible with high purity materials recently. We present a study on molecular beam epitaxy grown quantum wells and quantum dots with a contaminated aluminum evaporation cell, which introduced a high amount of impurities, perceivable in anomalies in optical and electrical measurements. We describe a way of addressing this problem and find that reconditioning the aluminum cell by overheating can lead to a full recovery of the anomalies in photoluminescence and capacitance-voltage measurements, leading to excellent low noise heterostructures. Furthermore, we propose a method to sense photo-induced trap charges using capacitance-voltage spectroscopy on self-assembled quantum dots. Excitation energy-dependent ionization of defect centers leads to shifts in capacitance-voltage spectra which can be used to determine the charge density of photo-induced trap charges via 1D band structure simulations. This method can be performed on frequently used quantum dot diode structures.
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Submitted 30 September, 2020; v1 submitted 29 September, 2020;
originally announced September 2020.
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A bright and fast source of coherent single photons
Authors:
Natasha Tomm,
Alisa Javadi,
Nadia O. Antoniadis,
Daniel Najer,
Matthias C. Löbl,
Alexander R. Korsch,
Rüdiger Schott,
Sascha R. Valentin,
Andreas D. Wieck,
Arne Ludwig,
Richard J. Warburton
Abstract:
A single photon source is a key enabling technology in device-independent quantum communication, quantum simulation for instance boson sampling, linear optics-based and measurement-based quantum computing. These applications involve many photons and therefore place stringent requirements on the efficiency of single photon creation. The scaling on efficiency is an exponential function of the number…
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A single photon source is a key enabling technology in device-independent quantum communication, quantum simulation for instance boson sampling, linear optics-based and measurement-based quantum computing. These applications involve many photons and therefore place stringent requirements on the efficiency of single photon creation. The scaling on efficiency is an exponential function of the number of photons. Schemes taking full advantage of quantum superpositions also depend sensitively on the coherence of the photons, i.e. their indistinguishability. It is therefore crucial to maintain the coherence over long strings of photons. Here, we report a single photon source with an especially high system efficiency: a photon is created on-demand at the output of the final optical fibre with a probability of 57%. The coherence of the photons is very high and is maintained over a stream consisting of thousands of photons; the repetition rate is in the GHz regime. We break with the established semiconductor paradigms, such as micropillars, photonic crystal cavities and waveguides. Instead, we employ gated quantum dots in an open, tunable microcavity. The gating ensures low-noise operation; the tunability compensates for the lack of control in quantum dot position and emission frequency; the output is very well-matched to a single-mode fibre. An increase in efficiency over the state-of-the-art by more than a factor of two, as reported here, will result in an enormous decrease in run-times, by a factor of $10^{7}$ for 20 photons.
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Submitted 24 July, 2020;
originally announced July 2020.
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A coherent spin-photon interface with waveguide induced cycling transitions
Authors:
Martin Hayhurst Appel,
Alexey Tiranov,
Alisa Javadi,
Matthias Christian Löbl,
Ying Wang,
Sven Scholz,
Andreas Dirk Wieck,
Arne Ludwig,
Richard John Warburton,
Peter Lodahl
Abstract:
Solid-state quantum dots are promising candidates for efficient light-matter interfaces connecting internal spin degrees of freedom to the states of emitted photons. However, selection rules prevent the combination of efficient spin control and optical cyclicity in this platform. By utilizing a photonic crystal waveguide we here experimentally demonstrate optical cyclicity up to $\approx15$ throug…
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Solid-state quantum dots are promising candidates for efficient light-matter interfaces connecting internal spin degrees of freedom to the states of emitted photons. However, selection rules prevent the combination of efficient spin control and optical cyclicity in this platform. By utilizing a photonic crystal waveguide we here experimentally demonstrate optical cyclicity up to $\approx15$ through photonic state engineering while achieving high fidelity spin initialization and coherent optical spin control. These capabilities pave the way towards scalable multi-photon entanglement generation and on-chip spin-photon gates.
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Submitted 27 June, 2020;
originally announced June 2020.
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Experimental reconstruction of the few-photon nonlinear scattering matrix from a single quantum dot in a nanophotonic waveguide
Authors:
Hanna Le Jeannic,
Tomás Ramos,
Signe F. Simonsen,
Tommaso Pregnolato,
Zhe Liu,
Rüdiger Schott,
Andreas D. Wieck,
Arne Ludwig,
Nir Rotenberg,
Juan José García-Ripoll,
Peter Lodahl
Abstract:
Coherent photon-emitter interfaces offer a way to mediate efficient nonlinear photon-photon interactions, much needed for quantum information processing. Here we experimentally study the case of a two-level emitter, a quantum dot, coupled to a single optical mode in a nanophotonic waveguide. We carry out few-photon transport experiments and record the statistics of the light to reconstruct the sca…
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Coherent photon-emitter interfaces offer a way to mediate efficient nonlinear photon-photon interactions, much needed for quantum information processing. Here we experimentally study the case of a two-level emitter, a quantum dot, coupled to a single optical mode in a nanophotonic waveguide. We carry out few-photon transport experiments and record the statistics of the light to reconstruct the scattering matrix elements of 1- and 2-photon components. This provides direct insight to the complex nonlinear photon interaction that contains rich many-body physics.
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Submitted 14 January, 2021; v1 submitted 30 May, 2020;
originally announced June 2020.
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Near Transform-limited Quantum Dot Linewidths in a Broadband Photonic Crystal Waveguide
Authors:
Freja T. Pedersen,
Ying Wang,
Cecilie T. Olesen,
Sven Scholz,
Andreas D. Wieck,
Arne Ludwig,
Matthias C. Löbl,
Richard J. Warburton,
Leonardo Midolo,
Ravitej Uppu,
Peter Lodahl
Abstract:
Planar nanophotonic structures enable broadband, near-unity coupling of emission from quantum dots embedded within, thereby realizing ideal singe-photon sources. The efficiency and coherence of the single-photon source is limited by charge noise, which results in the broadening of the emission spectrum.We report suppression of the noise by fabricating photonic crystal waveguides in a gallium arsen…
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Planar nanophotonic structures enable broadband, near-unity coupling of emission from quantum dots embedded within, thereby realizing ideal singe-photon sources. The efficiency and coherence of the single-photon source is limited by charge noise, which results in the broadening of the emission spectrum.We report suppression of the noise by fabricating photonic crystal waveguides in a gallium arsenide membrane containing quantum dots embedded in a $p$-$i$-$n$ diode. Local electrical contacts in the vicinity of the waveguides minimize the leakage current and allow fast electrical control ($\approx$4 MHz bandwidth) of the quantum dot resonances. Resonant linewidth measurements of $79$ quantum dots coupled to the photonic crystal waveguides exhibit near transform-limited emission over a 6 nm wide range of emission wavelengths. Importantly, the local electrical contacts allow independent tuning of multiple quantum dots on the same chip, which together with the transform-limited emission are key components in realizing multiemitter-based quantum information processing.
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Submitted 8 May, 2020;
originally announced May 2020.
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Coherent beam splitting of flying electrons driven by a surface acoustic wave
Authors:
R. Ito,
S. Takada,
A. Ludwig,
A. D. Wieck,
S. Tarucha,
M. Yamamoto
Abstract:
We develop a coherent beam splitter for single electrons driven through two tunnel-coupled quantum wires by surface acoustic waves (SAWs). The output current through each wire oscillates with gate voltages to tune the tunnel-coupling and potential difference between the wires. This oscillation is assigned to coherent electron tunneling motion that can be used to encode a flying qubit and is well r…
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We develop a coherent beam splitter for single electrons driven through two tunnel-coupled quantum wires by surface acoustic waves (SAWs). The output current through each wire oscillates with gate voltages to tune the tunnel-coupling and potential difference between the wires. This oscillation is assigned to coherent electron tunneling motion that can be used to encode a flying qubit and is well reproduced by numerical calculations of time evolution of the SAW-driven single electrons. The oscillation visibility is currently limited to about 3%, but robust against decoherence, indicating that the SAW-electron can serve as a novel platform for a solid-state flying qubit.
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Submitted 24 April, 2020;
originally announced April 2020.
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Distant spin entanglement via fast and coherent electron shuttling
Authors:
Baptiste Jadot,
Pierre-André Mortemousque,
Emmanuel Chanrion,
Vivien Thiney,
Arne Ludwig,
Andreas D. Wieck,
Matias Urdampilleta,
Christopher Bäuerle,
Tristan Meunier
Abstract:
In the quest for large-scale quantum computing, networked quantum computers offer a natural path towards scalability. Now that nearest neighbor entanglement has been demonstrated for electron spin qubits in semiconductors, on-chip long distance entanglement brings versatility to connect quantum core units. Here we realize the controlled and coherent transfer of a pair of entangled electron spins,…
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In the quest for large-scale quantum computing, networked quantum computers offer a natural path towards scalability. Now that nearest neighbor entanglement has been demonstrated for electron spin qubits in semiconductors, on-chip long distance entanglement brings versatility to connect quantum core units. Here we realize the controlled and coherent transfer of a pair of entangled electron spins, and demonstrate their remote entanglement when separated by a distance of 6 microns. Driven by coherent spin rotations induced by the electron displacement, high-contrast spin quantum interferences are observed and are a signature of the preservation of the entanglement all along the displacement procedure. This work opens the route towards fast on-chip deterministic interconnection of remote quantum bits in semiconductor quantum circuits.
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Submitted 6 April, 2020;
originally announced April 2020.
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Scalable integrated single-photon source
Authors:
Ravitej Uppu,
Freja T. Pedersen,
Ying Wang,
Cecilie T. Olesen,
Camille Papon,
Xiaoyan Zhou,
Leonardo Midolo,
Sven Scholz,
Andreas D. Wieck,
Arne Ludwig,
Peter Lodahl
Abstract:
Photonic qubits are key enablers for quantum-information processing deployable across a distributed quantum network. An on-demand and truly scalable source of indistinguishable single photons is the essential component enabling high-fidelity photonic quantum operations. A main challenge is to overcome noise and decoherence processes in order to reach the steep benchmarks on generation efficiency a…
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Photonic qubits are key enablers for quantum-information processing deployable across a distributed quantum network. An on-demand and truly scalable source of indistinguishable single photons is the essential component enabling high-fidelity photonic quantum operations. A main challenge is to overcome noise and decoherence processes in order to reach the steep benchmarks on generation efficiency and photon indistinguishability required for scaling up the source. We report on the realization of a deterministic single-photon source featuring near-unity indistinguishability using a quantum dot in an 'on-chip' planar nanophotonic waveguide circuit. The device produces long strings of $>100$ single photons without any observable decrease in the mutual indistinguishability between photons. A total generation rate of $122$ million photons per second is achieved corresponding to an 'on-chip' source efficiency of $84 \%$. These specifications of the single-photon source are benchmarked for boson sampling and found to enable scaling into the regime of quantum advantage.
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Submitted 19 March, 2020;
originally announced March 2020.
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Effect of electric current on optical orientation of electrons in AlGaAs/GaAs heterostructure
Authors:
O. S. Ken,
E. A. Zhukov,
I. A. Akimov,
V. L. Korenev,
N. E. Kopteva,
I. V. Kalitukha,
V. F. Sapega,
A. D. Wieck,
A. Ludwig,
R. Schott,
Yu. G. Kusrayev,
D. R. Yakovlev,
M. Bayer
Abstract:
The effect of a lateral electric current on the photoluminescence H-band of an AlGaAs/GaAs heterostructure is investigated. The photoluminescence intensity and optical orientation of electrons contributing to the H-band are studied by means of continuous wave and time-resolved photoluminescence spectroscopy and time-resolved Kerr rotation. It is shown that the H-band is due to recombination of the…
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The effect of a lateral electric current on the photoluminescence H-band of an AlGaAs/GaAs heterostructure is investigated. The photoluminescence intensity and optical orientation of electrons contributing to the H-band are studied by means of continuous wave and time-resolved photoluminescence spectroscopy and time-resolved Kerr rotation. It is shown that the H-band is due to recombination of the heavy holes localized at the heterointerface with photoexcited electrons attracted to the heterointerface from the GaAs layer. Two lines with significantly different decay times constitute the H-band: a short-lived high-energy one and a long-lived low-energy one. The high-energy line originates from recombination of electrons freely moving along the structure plane, while the low-energy one is due to recombination of donor-bound electrons near the interface. Application of the lateral electric field of ~ 100-200 V/cm results in a quenching of both lines. This quenching is due to a decrease of electron concentration near the heterointerface as a result of a photocurrent-induced heating of electrons in the GaAs layer. On the contrary, electrons near the heterointerface are effectively cooled, so the donors near the interface are not completely empty up to ~ 100 V/cm, which is in stark contrast with the case of bulk materials. The optical spin polarization of the donor-bound electrons near the heterointerface weakly depends on the electric field. Their polarization kinetics is determined by the spin dephasing in the hyperfine fields of the lattice nuclei. The long spin memory time (> 40 ns) can be associated with suppression of the Bir-Aronov-Pikus mechanism of spin relaxation for electrons.
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Submitted 18 March, 2020;
originally announced March 2020.
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Low-Noise GaAs Quantum Dots for Quantum Photonics
Authors:
Liang Zhai,
Matthias C. Löbl,
Giang N. Nguyen,
Julian Ritzmann,
Alisa Javadi,
Clemens Spinnler,
Andreas D. Wieck,
Arne Ludwig,
Richard J. Warburton
Abstract:
Quantum dots are both excellent single-photon sources and hosts for single spins. This combination enables the deterministic generation of Raman-photons -- bandwidth-matched to an atomic quantum-memory -- and the generation of photon cluster states, a resource in quantum communication and measurement-based quantum computing. GaAs quantum dots in AlGaAs can be matched in frequency to a rubidium-bas…
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Quantum dots are both excellent single-photon sources and hosts for single spins. This combination enables the deterministic generation of Raman-photons -- bandwidth-matched to an atomic quantum-memory -- and the generation of photon cluster states, a resource in quantum communication and measurement-based quantum computing. GaAs quantum dots in AlGaAs can be matched in frequency to a rubidium-based photon memory, and have potentially improved electron spin coherence compared to the widely used InGaAs quantum dots. However, their charge stability and optical linewidths are typically much worse than for their InGaAs counterparts. Here, we embed GaAs quantum dots into an $n$-$i$-$p$-diode specially designed for low-temperature operation. We demonstrate ultra-low noise behaviour: charge control via Coulomb blockade, close-to lifetime-limited linewidths, and no blinking. We observe high-fidelity optical electron-spin initialisation and long electron-spin lifetimes for these quantum dots. Our work establishes a materials platform for low-noise quantum photonics close to the red part of the spectrum.
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Submitted 24 September, 2020; v1 submitted 28 February, 2020;
originally announced March 2020.
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Electrostatic potential shape of gate defined quantum point contacts
Authors:
Max Geier,
Jaan Freudenfeld,
Jorge T. Silva,
Vladimir Umansky,
Dirk Reuter,
Andreas D. Wieck,
Piet W. Brouwer,
Stefan Ludwig
Abstract:
Quantum point contacts (QPC) are fundamental building blocks of nanoelectronic circuits. For their emission dynamics as well as for interaction effects such as the 0.7-anomaly the details of the electrostatic potential are important, but the precise potential shapes are usually unknown. Here, we measure the one-dimensional subband spacings of various QPCs as a function of their conductance and com…
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Quantum point contacts (QPC) are fundamental building blocks of nanoelectronic circuits. For their emission dynamics as well as for interaction effects such as the 0.7-anomaly the details of the electrostatic potential are important, but the precise potential shapes are usually unknown. Here, we measure the one-dimensional subband spacings of various QPCs as a function of their conductance and compare our findings with models of lateral parabolic versus hard wall confinement. We find that a gate-defined QPC near pinch-off is compatible with the parabolic saddle point scenario. However, as the number of populated subbands is increased Coulomb screening flattens the potential bottom and a description in terms of a finite hard wall potential becomes more realistic.
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Submitted 18 September, 2020; v1 submitted 27 February, 2020;
originally announced February 2020.
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On-chip deterministic operation of quantum dots in dual-mode waveguides for a plug-and-play single-photon source
Authors:
Ravitej Uppu,
Hans T. Eriksen,
Henri Thyrrestrup,
Aslı D. Uğurlu,
Ying Wang,
Sven Scholz,
Andreas D. Wieck,
Arne Ludwig,
Matthias C. Löbl,
Richard J. Warburton,
Peter Lodahl,
Leonardo Midolo
Abstract:
A deterministic source of coherent single photons is an enabling device of quantum-information processing for quantum simulators, and ultimately a full-fledged quantum internet. Quantum dots (QDs) in nanophotonic structures have been employed as excellent sources of single photons, and planar waveguides are well suited for scaling up to multiple photons and emitters exploring near-unity photon-emi…
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A deterministic source of coherent single photons is an enabling device of quantum-information processing for quantum simulators, and ultimately a full-fledged quantum internet. Quantum dots (QDs) in nanophotonic structures have been employed as excellent sources of single photons, and planar waveguides are well suited for scaling up to multiple photons and emitters exploring near-unity photon-emitter coupling and advanced active on-chip functionalities. An ideal single-photon source requires suppressing noise and decoherence, which notably has been demonstrated in electrically-contacted heterostructures. It remains a challenge to implement deterministic resonant excitation of the QD required for generating coherent single photons, since residual light from the excitation laser should be suppressed without compromising source efficiency and scalability. Here, we present the design and realization of a novel planar nanophotonic device that enables deterministic pulsed resonant excitation of QDs through the waveguide. Through nanostructure engineering, the excitation light and collected photons are guided in two orthogonal waveguide modes enabling deterministic operation. We demonstrate a coherent single-photon source that simultaneously achieves high-purity ($g^{(2)}(0)$ = 0.020 $\pm$ 0.005), high-indistinguishability ($V$ = 96 $\pm$ 2 %), and $>$80 % coupling efficiency into the waveguide. The novel `plug-and-play' coherent single-photon source could be operated unmanned for several days and will find immediate applications, e.g., for constructing heralded multi-photon entanglement sources for photonic quantum computing or sensing.
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Submitted 29 January, 2020;
originally announced January 2020.
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Coherence of a driven electron spin qubit actively decoupled from quasi-static noise
Authors:
Takashi Nakajima,
Akito Noiri,
Kento Kawasaki,
Jun Yoneda,
Peter Stano,
Shinichi Amaha,
Tomohiro Otsuka,
Kenta Takeda,
Matthieu R. Delbecq,
Giles Allison,
Arne Ludwig,
Andreas D. Wieck,
Daniel Loss,
Seigo Tarucha
Abstract:
The coherence of electron spin qubits in semiconductor quantum dots suffers mostly from low-frequency noise. During the last decade, efforts have been devoted to mitigate such noise by material engineering, leading to substantial enhancement of the spin dephasing time for an idling qubit. However, the role of the environmental noise during spin manipulation, which determines the control fidelity,…
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The coherence of electron spin qubits in semiconductor quantum dots suffers mostly from low-frequency noise. During the last decade, efforts have been devoted to mitigate such noise by material engineering, leading to substantial enhancement of the spin dephasing time for an idling qubit. However, the role of the environmental noise during spin manipulation, which determines the control fidelity, is less understood. We demonstrate an electron spin qubit whose coherence in the driven evolution is limited by high-frequency charge noise rather than the quasi-static noise inherent to any semiconductor device. We employed a feedback control technique to actively suppress the latter, demonstrating a $π$-flip gate fidelity as high as $99.04\pm 0.23\,\%$ in a gallium arsenide quantum dot. We show that the driven-evolution coherence is limited by the longitudinal noise at the Rabi frequency, whose spectrum resembles the $1/f$ noise observed in isotopically purified silicon qubits.
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Submitted 13 March, 2020; v1 submitted 9 January, 2020;
originally announced January 2020.
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Excess noise in Al${}_\text{x}$Ga${}_\text{1-x}$As/GaAs based quantum rings
Authors:
Christian Riha,
Sven S. Buchholz,
Olivio Chiatti,
Andreas D. Wieck,
Dirk Reuter,
Saskia F. Fischer
Abstract:
Cross-correlated noise measurements are performed in etched Al${}_\text{x}$Ga${}_\text{1-x}$As/GaAs based quantum rings in equilibrium at bath temperature of $T_\text{bath}=4.2\text{ K}$. The measured white noise exceeds the thermal (Johnson-Nyquist) noise expected from the measured electron temperature $T_\text{e}$ and the electrical resistance $R$. This excess part of the white noise decreases a…
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Cross-correlated noise measurements are performed in etched Al${}_\text{x}$Ga${}_\text{1-x}$As/GaAs based quantum rings in equilibrium at bath temperature of $T_\text{bath}=4.2\text{ K}$. The measured white noise exceeds the thermal (Johnson-Nyquist) noise expected from the measured electron temperature $T_\text{e}$ and the electrical resistance $R$. This excess part of the white noise decreases as $T_\text{bath}$ increases and vanishes for $T_\text{bath}\geq 12\text{ K}$. Excess noise is neither observed if one arm of a quantum ring is depleted of electrons nor in 1D-constrictions that have a length and width comparable to the quantum rings. A model is presented that suggests that the excess noise originates from the correlation of noise sources, mediated by phase-coherent propagation of electrons.
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Submitted 9 December, 2019;
originally announced December 2019.
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Radiative Auger Process in the Single-Photon Limit
Authors:
Matthias C. Löbl,
Clemens Spinnler,
Alisa Javadi,
Liang Zhai,
Giang N. Nguyen,
Julian Ritzmann,
Leonardo Midolo,
Peter Lodahl,
Andreas D. Wieck,
Arne Ludwig,
Richard J. Warburton
Abstract:
In a multi-electron atom, an excited electron can decay by emitting a photon. Typically, the leftover electrons are in their ground state. In a radiative Auger process, the leftover electrons are in an excited state and a redshifted photon is created. In a semiconductor quantum dot, radiative Auger is predicted for charged excitons. Here we report the observation of radiative Auger on trions in si…
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In a multi-electron atom, an excited electron can decay by emitting a photon. Typically, the leftover electrons are in their ground state. In a radiative Auger process, the leftover electrons are in an excited state and a redshifted photon is created. In a semiconductor quantum dot, radiative Auger is predicted for charged excitons. Here we report the observation of radiative Auger on trions in single quantum dots. For a trion, a photon is created on electron-hole recombination, leaving behind a single electron. The radiative Auger process promotes this additional (Auger) electron to a higher shell of the quantum dot. We show that the radiative Auger effect is a powerful probe of this single electron: the energy separations between the resonance fluorescence and the radiative Auger emission directly measure the single-particle splittings of the electronic states in the quantum dot with high precision. In semiconductors, these single-particle splittings are otherwise hard to access by optical means as particles are excited typically in pairs, as excitons. After the radiative Auger emission, the Auger carrier relaxes back to the lowest shell. Going beyond the original theoretical proposals, we show how applying quantum optics techniques to the radiative Auger photons gives access to the single-electron dynamics, notably relaxation and tunneling. This is also hard to access by optical means: even for quasi-resonant $p$-shell excitation, electron relaxation takes place in the presence of a hole, complicating the relaxation dynamics. The radiative Auger effect can be exploited in other semiconductor nanostructures and quantum emitters in the solid state to determine the energy levels and the dynamics of a single carrier.
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Submitted 16 January, 2021; v1 submitted 26 November, 2019;
originally announced November 2019.
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Real-time detection of every Auger recombination in a self-assembled quantum dot
Authors:
Pia Lochner,
Annika Kurzmann,
Jens Kerski,
Philipp Stegmann,
Jürgen König,
Andreas D. Wieck,
Arne Ludwig,
Axel Lorke,
Martin Geller
Abstract:
Auger recombination is a non-radiative process, where the recombination energy of an electron-hole pair is transferred to a third charge carrier. It is a common effect in colloidal quantum dots that quenches the radiative emission with an Auger recombination time below nanoseconds. In self-assembled QDs, the Auger recombination has been observed with a much longer recombination time in the order o…
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Auger recombination is a non-radiative process, where the recombination energy of an electron-hole pair is transferred to a third charge carrier. It is a common effect in colloidal quantum dots that quenches the radiative emission with an Auger recombination time below nanoseconds. In self-assembled QDs, the Auger recombination has been observed with a much longer recombination time in the order of microseconds. Here, we use two-color laser excitation on the exciton and trion transition in resonance fluorescence on a single self-assembled quantum dot to monitor in real-time every quantum event of the Auger process. Full counting statistics on the random telegraph signal give access to the cumulants and demonstrate the tunability of the Fano factor from a Poissonian to a sub-Poissonian distribution by Auger-mediated electron emission from the dot. Therefore, the Auger process can be used to tune optically the charge carrier occupation of the dot by the incident laser intensity; independently from the electron tunneling from the reservoir by the gate voltage. Our findings are not only highly relevant for the understanding of the Auger process, it also demonstrates the perspective of the Auger effect for controlling precisely the charge state in a quantum system by optical means.
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Submitted 13 November, 2019; v1 submitted 12 November, 2019;
originally announced November 2019.
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Microscopic model of stacking-fault potential and exciton wave function in GaAs
Authors:
Mikhail V. Durnev,
Mikhail M. Glazov,
Xiayu Linpeng,
Maria L. K. Viitaniemi,
Bethany Matthews,
Steven R. Spurgeon,
P. V. Sushko,
Andreas D. Wieck,
Arne Ludwig,
Kai-Mei C. Fu
Abstract:
Two-dimensional stacking fault defects embedded in a bulk crystal can provide a homogeneous trap** potential for carriers and excitons. Here we utilize state-of-the-art structural imaging coupled with density functional and effective-mass theory to build a microscopic model of the stacking-fault exciton. The diamagnetic shift and exciton dipole moment at different magnetic fields are calculated…
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Two-dimensional stacking fault defects embedded in a bulk crystal can provide a homogeneous trap** potential for carriers and excitons. Here we utilize state-of-the-art structural imaging coupled with density functional and effective-mass theory to build a microscopic model of the stacking-fault exciton. The diamagnetic shift and exciton dipole moment at different magnetic fields are calculated and compared with the experimental photoluminescence of excitons bound to a single stacking fault in GaAs. The model is used to further provide insight into the properties of excitons bound to the double-well potential formed by stacking fault pairs. This microscopic exciton model can be used as an input into models which include exciton-exciton interactions to determine the excitonic phases accessible in this system.
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Submitted 1 November, 2019;
originally announced November 2019.
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Detection and amplification of spin noise using scattered laser light in a quantum-dot microcavity
Authors:
A. N. Kamenskii,
M. Yu. Petrov,
G. G. Kozlov,
V. S. Zapasskii,
S. E. Scholz,
C. Sgroi,
A. Ludwig,
A. D. Wieck,
M. Bayer,
A. Greilich
Abstract:
Fundamental properties of the spin-noise signal formation in a quantum-dot microcavity are studied by measuring the angular characteristics of the scattered light intensity. A distributed Bragg reflector microcavity was used to enhance the light-matter interaction with an ensemble of n-doped (In,Ga)As/GaAs quantum dots, which allowed us to study subtle effects of the noise signal formation. Detect…
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Fundamental properties of the spin-noise signal formation in a quantum-dot microcavity are studied by measuring the angular characteristics of the scattered light intensity. A distributed Bragg reflector microcavity was used to enhance the light-matter interaction with an ensemble of n-doped (In,Ga)As/GaAs quantum dots, which allowed us to study subtle effects of the noise signal formation. Detecting the scattered light outside of the aperture of the transmitted light, we measured the basic electron spin properties, like g-factor and spin dephasing time. Further, we investigated the influence of the microcavity on the scattering distribution and possibilities of signal amplification by additional resonant excitation.
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Submitted 22 October, 2019;
originally announced October 2019.
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On-chip nanomechanical filtering of quantum-dot single-photon sources
Authors:
Xiaoyan Zhou,
Ravitej Uppu,
Zhe Liu,
Camille Papon,
Rudiger Schott,
Andreas D. Wieck,
Arne Ludwig,
Peter Lodahl,
Leonardo Midolo
Abstract:
Semiconductor quantum dots in photonic integrated circuits enable scaling quantum-information processing to many single photons and quantum-optical gates. On-chip spectral filters are essential to achieve high-purity and coherent photon emission from quantum dots embedded in waveguides, without resorting to free-space optics. Such spectral filters should be tunable, to compensate for the inhomogen…
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Semiconductor quantum dots in photonic integrated circuits enable scaling quantum-information processing to many single photons and quantum-optical gates. On-chip spectral filters are essential to achieve high-purity and coherent photon emission from quantum dots embedded in waveguides, without resorting to free-space optics. Such spectral filters should be tunable, to compensate for the inhomogeneous spectral distribution of the quantum dots transitions. Here, we report an on-chip filter monolithically integrated with quantum dots, that uses nanomechanical motion for tuning its resonant wavelength over 10 nm, enabling operation at cryogenic temperatures and avoiding cross-talk with the emitter. We demonstrate single-photon emission from a quantum dot under non-resonant excitation by employing only the on-chip filter. These results are key for the development of fully-integrated de-multiplexing, multi-path photon encoding schemes, and multi-emitter circuits.
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Submitted 13 October, 2019;
originally announced October 2019.
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Full Counting Statistics of Spin-Flip/Conserving Charge Transitions in Pauli-Spin Blockade
Authors:
Sadashige Matsuo,
Kazuyuki Kuroyama,
Shunsuke Yabunaka,
Sascha R. Valentin,
Arne Ludwig,
Andreas D. Wieck,
Seigo Tarucha
Abstract:
We investigate the full counting statistics (FCS) of spin-conserving and spin-flip charge transitions in Pauli-spin blockade regime of a GaAs double quantum dot. A theoretical model is proposed to evaluate all spin-conserving and spin-flip tunnel rates, and to demonstrate the fundamental relation between FCS and waiting time distribution. We observe the remarkable features of parity effect and a t…
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We investigate the full counting statistics (FCS) of spin-conserving and spin-flip charge transitions in Pauli-spin blockade regime of a GaAs double quantum dot. A theoretical model is proposed to evaluate all spin-conserving and spin-flip tunnel rates, and to demonstrate the fundamental relation between FCS and waiting time distribution. We observe the remarkable features of parity effect and a tail structure in the constructed FCS, which do not appear in the Poisson distribution, and are originated from spin degeneracy and coexistence of slow and fast transitions, respectively. This study is potentially useful for elucidating the spin-related and other complex transition dynamics in quantum systems.
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Submitted 26 September, 2019;
originally announced September 2019.
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Lifetimes and quantum efficiencies of quantum dots deterministically positioned in photonic-crystal waveguides
Authors:
Xiao-Liu Chu,
Tommaso Pregnolato,
Rüdiger Schott,
Andreas D. Wieck,
Arne Ludwig,
Nir Rotenberg,
Peter Lodahl
Abstract:
Interfacing single emitters and photonic nanostructures enables modifying their emission properties, such as enhancing individual decay rates or controlling the emission direction. To achieve full control, the single emitter must be positioned in the nanostructures deterministically. Here, we use spectroscopy to gain spectral and spatial information about individual quantum dots in order to positi…
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Interfacing single emitters and photonic nanostructures enables modifying their emission properties, such as enhancing individual decay rates or controlling the emission direction. To achieve full control, the single emitter must be positioned in the nanostructures deterministically. Here, we use spectroscopy to gain spectral and spatial information about individual quantum dots in order to position each emitter in a pre-determined location in a unit cell of a photonic-crystal waveguide. Depending on the spatial and spectral positioning within the structured nanophotonic mode, we observe that the quantum dot emission can either be suppressed or enhanced. These results demonstrate the capacity of photonic-crystal waveguides to control the emission of single photons and that the ability to position quantum dots will be crucial to the creation of complex multi-emitter quantum photonic circuits.
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Submitted 19 September, 2019;
originally announced September 2019.
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Deterministic positioning of nanophotonic waveguides around single self-assembled quantum dots
Authors:
Tommaso Pregnolato,
Xiao-Liu Chu,
Tim Schröder,
Rüdiger Schott,
Andreas D. Wieck,
Arne Ludwig,
Peter Lodahl,
Nir Rotenberg
Abstract:
The capability to embed self-assembled quantum dots (QDs) at predefined positions in nanophotonic structures is key to the development of complex quantum photonic architectures. Here, we demonstrate that QDs can be deterministically positioned in nanophotonic waveguides by pre-locating QDs relative to a global reference frame using micro-photoluminescence ($μ$PL) spectroscopy. After nanofabricatio…
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The capability to embed self-assembled quantum dots (QDs) at predefined positions in nanophotonic structures is key to the development of complex quantum photonic architectures. Here, we demonstrate that QDs can be deterministically positioned in nanophotonic waveguides by pre-locating QDs relative to a global reference frame using micro-photoluminescence ($μ$PL) spectroscopy. After nanofabrication, $μ$PL images reveal misalignments between the central axis of the waveguide and the embedded QD of only $(9\pm46$) nm and $(1\pm33$) nm, for QDs embedded in undoped and doped membranes, respectively. A priori knowledge of the QD positions allows us to study the spectral changes introduced by nanofabrication. We record average spectral shifts ranging from 0.1 to 1.1 nm, indicating that the fabrication-induced shifts can generally be compensated by electrical or thermal tuning of the QDs. Finally, we quantify the effects of the nanofabrication on the polarizability, the permanent dipole moment and the emission frequency at vanishing electric field of different QD charge states, finding that these changes are constant down to QD-surface separations of only 70 nm. Consequently, our approach deterministically integrates QDs into nanophotonic waveguides whose light-fields contain nanoscale structure and whose group index varies at the nanometer level.
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Submitted 3 August, 2020; v1 submitted 2 July, 2019;
originally announced July 2019.
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Measurement of back-action from electron spins in a gate defined GaAs double quantum dot coupled to a mesoscopic nuclear spin bath
Authors:
Patrick Bethke,
Robert P. G. McNeil,
Julian Ritzmann,
Tim Botzem,
Arne Ludwig,
Andreas D. Wieck,
Hendrik Bluhm
Abstract:
Decoherence of a quantum system arising from its interaction with an environment is a key concept for understanding the transition between the quantum and classical world as well as performance limitations in quantum technology applications. The effects of large, weakly coupled environments are often described as a classical, fluctuating field whose dynamics is unaffected by the qubit, whereas a f…
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Decoherence of a quantum system arising from its interaction with an environment is a key concept for understanding the transition between the quantum and classical world as well as performance limitations in quantum technology applications. The effects of large, weakly coupled environments are often described as a classical, fluctuating field whose dynamics is unaffected by the qubit, whereas a fully quantum description still implies some back-action from the qubit on the environment. Here we show direct experimental evidence for such a back-action for an electron-spin-qubit in a GaAs quantum dot coupled to a mesoscopic environment of order $10^6$ nuclear spins. By means of a correlation measurement technique, we detect the back-action of a single qubit-environment interaction whose duration is comparable to the qubit's coherence time, even in such a large system. We repeatedly let the qubit interact with the spin bath and measure its state. Between such cycles, the qubit is reinitialized to different states. The correlations of the measurement outcomes are strongly affected by the intermediate qubit state, which reveals the action of a single electron spin on the nuclear spins.
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Submitted 26 July, 2020; v1 submitted 26 June, 2019;
originally announced June 2019.
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Suspended Spot-Size Converters for Scalable Single-Photon Devices
Authors:
Aslı D. Uğurlu,
Henri Thyrrestrup,
Ravitej Uppu,
Claudéric Ouellet-Plamondon,
Rüdiger Schott,
Andreas D. Wieck,
Arne Ludwig,
Peter Lodahl,
Leonardo Midolo
Abstract:
We report on the realization of a highly efficient optical spot-size converter for the end-face coupling of single photons from GaAs-based nanophotonic waveguides with embedded quantum dots. The converter is realized using an inverted taper and an epoxy polymer overlay providing a 1.3~$μ$m output mode field diameter. We demonstrate the collection of single photons from a quantum dot into a lensed…
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We report on the realization of a highly efficient optical spot-size converter for the end-face coupling of single photons from GaAs-based nanophotonic waveguides with embedded quantum dots. The converter is realized using an inverted taper and an epoxy polymer overlay providing a 1.3~$μ$m output mode field diameter. We demonstrate the collection of single photons from a quantum dot into a lensed fiber with a rate of 5.84$\pm0.01$~MHz and estimate a chip-to-fiber coupling efficiency of $\sim48$~\%. The stability and compatibility with cryogenic temperatures make the epoxy waveguides a promising material to realize efficient and scalable interconnects between heterogeneous quantum photonic integrated circuits.
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Submitted 21 June, 2019;
originally announced June 2019.
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Closed-loop control of a GaAs-based singlet-triplet spin qubit with 99.5% gate fidelity and low leakage
Authors:
Pascal Cerfontaine,
Tim Botzem,
Julian Ritzmann,
Simon Sebastian Humpohl,
Arne Ludwig,
Dieter Schuh,
Dominique Bougeard,
Andreas D. Wieck,
Hendrik Bluhm
Abstract:
Semiconductor spin qubits have recently seen major advances in coherence time and control fidelities, leading to a single-qubit performance that is on par with other leading qubit platforms. Most of this progress is based on microwave control of single spins in devices made of isotopically purified silicon. For controlling spins, the exchange interaction is an additional key ingredient which poses…
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Semiconductor spin qubits have recently seen major advances in coherence time and control fidelities, leading to a single-qubit performance that is on par with other leading qubit platforms. Most of this progress is based on microwave control of single spins in devices made of isotopically purified silicon. For controlling spins, the exchange interaction is an additional key ingredient which poses new challenges for high-fidelity control. Here, we demonstrate exchange-based single-qubit gates of two-electron spin qubits in GaAs double quantum dots. Using careful pulse optimization and closed-loop tuning, we achieve a randomized benchmarking fidelity of $(99.50 \pm 0.04)\%$ and a leakage rate of $0.13\%$ out of the computational subspace. These results open new perspectives for microwave-free control of singlet-triplet qubits in GaAs and other materials.
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Submitted 22 January, 2021; v1 submitted 12 June, 2019;
originally announced June 2019.
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Quantum nondemolition measurement of an electron spin qubit
Authors:
Takashi Nakajima,
Akito Noiri,
Jun Yoneda,
Matthieu R. Delbecq,
Peter Stano,
Tomohiro Otsuka,
Kenta Takeda,
Shinichi Amaha,
Giles Allison,
Kento Kawasaki,
Arne Ludwig,
Andreas D. Wieck,
Daniel Loss,
Seigo Tarucha
Abstract:
Measurement of quantum systems inevitably involves disturbance in various forms. Within the limits imposed by quantum mechanics, however, one can design an "ideal" projective measurement that does not introduce a back action on the measured observable, known as a quantum nondemolition (QND) measurement. Here we demonstrate an all-electrical QND measurement of a single electron spin in a gate-defin…
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Measurement of quantum systems inevitably involves disturbance in various forms. Within the limits imposed by quantum mechanics, however, one can design an "ideal" projective measurement that does not introduce a back action on the measured observable, known as a quantum nondemolition (QND) measurement. Here we demonstrate an all-electrical QND measurement of a single electron spin in a gate-defined quantum dot via an exchange-coupled ancilla qubit. The ancilla qubit, encoded in the singlet-triplet two-electron subspace, is entangled with the single spin and subsequently read out in a single shot projective measurement at a rate two orders of magnitude faster than the spin relaxation. The QND nature of the measurement protocol is evidenced by observing a monotonic increase of the readout fidelity over one hundred repetitive measurements against arbitrary input states. We extract information from the measurement record using the method of optimal inference, which is tolerant to the presence of the relaxation and dephasing. The QND measurement allows us to observe spontaneous spin flips (quantum jumps) in an isolated system with small disturbance. Combined with the high-fidelity control of spin qubits, these results pave the way for various measurement-based quantum state manipulations including quantum error correction protocols.
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Submitted 25 April, 2019;
originally announced April 2019.
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Sound-driven single-electron transfer in a circuit of coupled quantum rails
Authors:
Shintaro Takada,
Hermann Edlbauer,
Hugo V. Lepage,
Junliang Wang,
Pierre-André Mortemousque,
Giorgos Georgiou,
Crispin H. W. Barnes,
Chris J. B. Ford,
Mingyun Yuan,
Paulo V. Santos,
Xavier Waintal,
Arne Ludwig,
Andreas D. Wieck,
Matias Urdampilleta,
Tristan Meunier,
Christopher Bäuerle
Abstract:
Surface acoustic waves (SAWs) strongly modulate the shallow electric potential in piezoelectric materials. In semiconductor heterostructures such as GaAs/AlGaAs, SAWs can thus be employed to transfer individual electrons between distant quantum dots. This transfer mechanism makes SAW technologies a promising candidate to convey quantum information through a circuit of quantum logic gates. Here we…
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Surface acoustic waves (SAWs) strongly modulate the shallow electric potential in piezoelectric materials. In semiconductor heterostructures such as GaAs/AlGaAs, SAWs can thus be employed to transfer individual electrons between distant quantum dots. This transfer mechanism makes SAW technologies a promising candidate to convey quantum information through a circuit of quantum logic gates. Here we present two essential building blocks of such a SAW-driven quantum circuit. First, we implement a directional coupler allowing to partition a flying electron arbitrarily into two paths of transportation. Second, we demonstrate a triggered single-electron source enabling synchronisation of the SAW-driven sending process. Exceeding a single-shot transfer efficiency of 99 %, we show that a SAW-driven integrated circuit is feasible with single electrons on a large scale. Our results pave the way to perform quantum logic operations with flying electron qubits.
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Submitted 23 September, 2019; v1 submitted 2 March, 2019;
originally announced March 2019.
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Correlations between Optical Properties and Voronoi-Cell Area of Quantum Dots
Authors:
Matthias C. Löbl,
Liang Zhai,
Jan-Philipp Jahn,
Julian Ritzmann,
Yongheng Huo,
Andreas D. Wieck,
Oliver G. Schmidt,
Arne Ludwig,
Armando Rastelli,
Richard J. Warburton
Abstract:
A semiconductor quantum dot (QD) can generate highly indistinguishable single-photons at a high rate. For application in quantum communication and integration in hybrid systems, control of the QD optical properties is essential. Understanding the connection between the optical properties of a QD and the growth process is therefore important. Here, we show for GaAs QDs, grown by infilling droplet-e…
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A semiconductor quantum dot (QD) can generate highly indistinguishable single-photons at a high rate. For application in quantum communication and integration in hybrid systems, control of the QD optical properties is essential. Understanding the connection between the optical properties of a QD and the growth process is therefore important. Here, we show for GaAs QDs, grown by infilling droplet-etched nano-holes, that the emission wavelength, the neutral-to-charged exciton splitting, and the diamagnetic shift are strongly correlated with the capture zone-area, an important concept from nucleation theory. We show that the capture-zone model applies to the growth of this system even in the limit of a low QD-density in which atoms diffuse over $μ$m-distances. The strong correlations between the various QD parameters facilitate preselection of QDs for applications with specific requirements on the QD properties; they also suggest that a spectrally narrowed QD distribution will result if QD growth on a regular lattice can be achieved.
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Submitted 3 October, 2019; v1 submitted 26 February, 2019;
originally announced February 2019.
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A Machine Learning Approach for Automated Fine-Tuning of Semiconductor Spin Qubits
Authors:
Julian D. Teske,
Simon Humpohl,
René Otten,
Patrick Bethke,
Pascal Cerfontaine,
Jonas Dedden,
Arne Ludwig,
Andreas D. Wieck,
Hendrik Bluhm
Abstract:
While spin qubits based on gate-defined quantum dots have demonstrated very favorable properties for quantum computing, one remaining hurdle is the need to tune each of them into a good operating regime by adjusting the voltages applied to electrostatic gates. The automation of these tuning procedures is a necessary requirement for the operation of a quantum processor based on gate-defined quantum…
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While spin qubits based on gate-defined quantum dots have demonstrated very favorable properties for quantum computing, one remaining hurdle is the need to tune each of them into a good operating regime by adjusting the voltages applied to electrostatic gates. The automation of these tuning procedures is a necessary requirement for the operation of a quantum processor based on gate-defined quantum dots, which is yet to be fully addressed. We present an algorithm for the automated fine-tuning of quantum dots, and demonstrate its performance on a semiconductor singlet-triplet qubit in GaAs. The algorithm employs a Kalman filter based on Bayesian statistics to estimate the gradients of the target parameters as function of gate voltages, thus learning the system response. The algorithm's design is focused on the reduction of the number of required measurements. We experimentally demonstrate the ability to change the operation regime of the qubit within 3 to 5 iterations, corresponding to 10 to 15 minutes of lab-time.
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Submitted 8 March, 2019; v1 submitted 7 January, 2019;
originally announced January 2019.