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Quantum-assisted Distortion-free audio signal sensing
Authors:
Chen Zhang,
Durga Dasari,
Matthias Widmann,
Jonas Meinel,
Vadim Vorobyov,
Polina Kapitanova,
Elizaveta Nenasheva,
Kazuo Nakamura,
Hitoshi Sumiya,
Shinobu Onoda,
Junichi Isoya,
Jörg Wrachtrup
Abstract:
Quantum sensors are kee** the cutting-edge sensitivities in metrology. However, for high-sensitive measurements of arbitrary signals, limitations in linear dynamic range could introduce distortions when sensing the frequency, magnitude and phase of unknown signals. Here, we overcome these limitations with advanced sensing protocol that combines quantum phase-sensitive detection with heterodyne r…
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Quantum sensors are kee** the cutting-edge sensitivities in metrology. However, for high-sensitive measurements of arbitrary signals, limitations in linear dynamic range could introduce distortions when sensing the frequency, magnitude and phase of unknown signals. Here, we overcome these limitations with advanced sensing protocol that combines quantum phase-sensitive detection with heterodyne readout. We present theoretical and experimental investigations using nitrogen-vacancy centers in diamond, showing the ability to sense radio signals with a 98 dB linear dynamic range, a 31 pT/Hz$^{1/2}$ sensitivity, and arbitrary frequency resolution. Further, we perform the quantum-assisted distortion-free audio signal (melody, speech) sensing with high fidelity. The methods developed here could broaden the horizon for quantum sensors towards applications in telecommunication, where high-fidelity and low-distortion at multiple frequency bands within small sensing volumes are required.
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Submitted 10 November, 2021; v1 submitted 7 November, 2021;
originally announced November 2021.
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Narrow inhomogeneous distribution of spin-active emitters in silicon carbide
Authors:
Roland Nagy,
Durga Bhaktavatsala Rao Dasari,
Charles Babin,
Di Liu,
Vadim Vorobyov,
Matthias Niethammer,
Matthias Widmann,
Tobias Linkewitz,
Rainer Stöhr,
Heiko B. Weber,
Takeshi Ohshima,
Misagh Ghezellou,
Nguyen Tien Son,
Jawad Ul-Hassan,
Florian Kaiser,
Jörg Wrachtrup
Abstract:
Optically active solid-state spin registers have demonstrated their unique potential in quantum computing, communication and sensing. Realizing scalability and increasing application complexity requires entangling multiple individual systems, e.g. via photon interference in an optical network. However, most solid-state emitters show relatively broad spectral distributions, which hinders optical in…
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Optically active solid-state spin registers have demonstrated their unique potential in quantum computing, communication and sensing. Realizing scalability and increasing application complexity requires entangling multiple individual systems, e.g. via photon interference in an optical network. However, most solid-state emitters show relatively broad spectral distributions, which hinders optical interference experiments. Here, we demonstrate that silicon vacancy centres in semiconductor silicon carbide (SiC) provide a remarkably small natural distribution of their optical absorption/emission lines despite an elevated defect concentration of $\approx 0.43\,\rm μm^{-3}$. In particular, without any external tuning mechanism, we show that only 13 defects have to be investigated until at least two optical lines overlap within the lifetime-limited linewidth. Moreover, we identify emitters with overlap** emission profiles within diffraction limited excitation spots, for which we introduce simplified schemes for generation of computationally-relevant Greenberger-Horne-Zeilinger (GHZ) and cluster states. Our results underline the potential of the CMOS-compatible SiC platform toward realizing networked quantum technology applications.
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Submitted 12 March, 2021; v1 submitted 10 March, 2021;
originally announced March 2021.
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Diamond magnetometry and gradiometry towards subpicotesla DC field measurement
Authors:
Chen Zhang,
Farida Shagieva,
Matthias Widmann,
Michael Kuebler,
Vadim Vorobyov,
Polina Kapitanova,
Elizaveta Nenasheva,
Ruth Corkill,
Oliver Roehrle,
Kazuo Nakamura,
Hitoshi Sumiya,
Shinobu Onoda,
Junichi Isoya,
Joerg Wrachtrup
Abstract:
Nitrogen vacancy (NV) centers in diamond have developed into a powerful solid-state platform for compact quantum sensors. However, high sensitivity measurements usually come with additional constraints on the pum** intensity of the laser and the pulse control applied. Here, we demonstrate high sensitivity NV ensemble based magnetic field measurements with low-intensity optical excitation. DC mag…
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Nitrogen vacancy (NV) centers in diamond have developed into a powerful solid-state platform for compact quantum sensors. However, high sensitivity measurements usually come with additional constraints on the pum** intensity of the laser and the pulse control applied. Here, we demonstrate high sensitivity NV ensemble based magnetic field measurements with low-intensity optical excitation. DC magnetometry methods like, e.g., continuous-wave optically detected magnetic resonance and continuously excited Ramsey measurements combined with lock-in detection, are compared to get an optimization. Gradiometry is also investigated as a step towards unshielded measurements of unknown gradients. The magnetometer demonstrates a minimum detectable field of 0.3-0.7 pT in a 73 s measurement by further applying a flux guide with a sensing dimension of 2 mm, corresponding to a magnetic field sensitivity of 2.6-6 pT/Hz^0.5. Combined with our previous efforts on the diamond AC magnetometry, the diamond magnetometer is promising to perform wide bandwidth magnetometry with picotesla sensitivity and a cubic-millimeter sensing volume under ambient conditions.
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Submitted 21 June, 2021; v1 submitted 31 December, 2020;
originally announced December 2020.
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Bright single photon sources in lateral silicon carbide light emitting diodes
Authors:
Matthias Widmann,
Matthias Niethammer,
Takahiro Makino,
Torsten Rendler,
Stefan Lasse,
Takeshi Ohshima,
Jawad Ul Hassan,
Nguyen Tien Son,
Sang-Yun Lee,
Jörg Wrachtrup
Abstract:
Single-photon emitting devices have been identified as an important building block for applications in quantum information and quantum communication. They allow to transduce and collect quantum information over a long distance via photons as so called flying qubits. In addition, substrates like silicon carbide provides an excellent material platform for electronic devices. In this work we combine…
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Single-photon emitting devices have been identified as an important building block for applications in quantum information and quantum communication. They allow to transduce and collect quantum information over a long distance via photons as so called flying qubits. In addition, substrates like silicon carbide provides an excellent material platform for electronic devices. In this work we combine these two features and show that one can drive single photon emitters within a silicon carbide p-i-n-diode. To achieve this, we specifically designed a lateral oriented diode. We find a variety of new color centers emitting non-classical lights in VIS and NIR range. One type of emitter can be electrically excited, demonstrating that silicon carbide can act as an ideal platform for electrically controllable single photon sources.
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Submitted 3 July, 2020;
originally announced July 2020.
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Evaluation of the performance of Euro-CORDEX RCMs for assessing hydrological climate change impacts in Great Britain: a comparison of different spatial resolutions and quantile map** bias correction methods
Authors:
Ernesto Pasten-Zapata,
Julie Jones,
Helen Moggridge,
Martin Widmann
Abstract:
Regional Climate Models (RCMs) are an essential tool for analysing regional climate change impacts as they provide simulations with more small-scale details and expected smaller errors than global climate models. There has been much effort to increase the spatial resolution and simulation skill of RCMs, yet the extent to which this improves the projection of hydrological change is unclear. Here, w…
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Regional Climate Models (RCMs) are an essential tool for analysing regional climate change impacts as they provide simulations with more small-scale details and expected smaller errors than global climate models. There has been much effort to increase the spatial resolution and simulation skill of RCMs, yet the extent to which this improves the projection of hydrological change is unclear. Here, we evaluate the skill of five reanalysis-driven Euro-CORDEX RCMs in simulating precipitation and temperature, and as drivers of a hydrological model to simulate river flow on four UK catchments covering different physical, climatic and hydrological characteristics. We test whether high-resolution RCMs provide added value, through analysis of two RCM resolutions, 50 km and 12.5 km, which are also bias-corrected employing the parametric quantile-map** (QM) method, using the normal distribution for temperature, and the Gamma (GQM) and Double Gamma (DGQM) distributions for precipitation. In a small catchment with complex topography, the 12.5 km RCMs outperform their 50 km version for precipitation and temperature, but when used in combination with the hydrological model, fail to capture the observed river flow distribution. In the other (larger) catchments, only one high-resolution RCM consistently outperforms its low-resolution version, implying that in general there is no added value from using the high-resolution RCMs in those catchments. GQM decreases most of the simulation biases, except for extreme precipitation and high flows, which are further decreased by DGQM. Bias correction does not improve the representation of daily temporal variability, but it does for monthly variability, in particular when applying DGQM. Overall, an increase in RCM resolution does not imply a better simulation of hydrology and bias-correction represents an alternative to ease decision-making.
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Submitted 21 July, 2019;
originally announced July 2019.
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Electrical charge state manipulation of single silicon vacancies in a silicon carbide quantum optoelectronic device
Authors:
Matthias Widmann,
Matthias Niethammer,
Dmitry Yu. Fedyanin,
Igor A. Khramtsov,
Torsten Rendler,
Ian D. Booker,
Jawad Ul Hassan,
Naoya Morioka,
Yu-Chen Chen,
Ivan G. Ivanov,
Nguyen Tien Son,
Takeshi Ohshima,
Michel Bockstedte,
Adam Gali,
Cristian Bonato,
Sang-Yun Lee,
Jörg Wrachtrup
Abstract:
Colour centres with long-lived spins are established platforms for quantum sensing and quantum information applications. Colour centres exist in different charge states, each of them with distinct optical and spin properties. Application to quantum technology requires the capability to access and stabilize charge states for each specific task. Here, we investigate charge state manipulation of indi…
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Colour centres with long-lived spins are established platforms for quantum sensing and quantum information applications. Colour centres exist in different charge states, each of them with distinct optical and spin properties. Application to quantum technology requires the capability to access and stabilize charge states for each specific task. Here, we investigate charge state manipulation of individual silicon vacancies in silicon carbide, a system which has recently shown a unique combination of long spin coherence time and ultrastable spin-selective optical transitions. In particular, we demonstrate charge state switching through the bias applied to the colour centre in an integrated silicon carbide opto-electronic device. We show that the electronic environment defined by the do** profile and the distribution of other defects in the device plays a key role for charge state control. Our experimental results and numerical modeling evidence that control of these complex interactions can, under certain conditions, enhance the photon emission rate. These findings open the way for deterministic control over the charge state of spin-active colour centres for quantum technology and provide novel techniques for monitoring do** profiles and voltage sensing in microscopic devices.
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Submitted 23 June, 2019; v1 submitted 13 June, 2019;
originally announced June 2019.
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Coherent electrical readout of defect spins in 4H-SiC by photo-ionization at ambient conditions
Authors:
Matthias Niethammer,
Matthias Widmann,
Torsten Rendler,
Naoya Morioka,
Yu-Chen Chen,
Rainer Stöhr,
Jawad Ul Hassan,
Shinobu Onoda,
Takeshi Ohshima,
Sang-Yun Lee,
Amlan Mukherjee,
Junichi Isoya,
Nguyen Tien Son,
Jörg Wrachtrup
Abstract:
Quantum technology relies on proper hardware, enabling coherent quantum state control as well as efficient quantum state readout. In this regard, wide-bandgap semiconductors are an emerging material platform with scalable wafer fabrication methods, hosting several promising spin-active point defects. Conventional readout protocols for such defect spins rely on fluorescence detection and are limite…
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Quantum technology relies on proper hardware, enabling coherent quantum state control as well as efficient quantum state readout. In this regard, wide-bandgap semiconductors are an emerging material platform with scalable wafer fabrication methods, hosting several promising spin-active point defects. Conventional readout protocols for such defect spins rely on fluorescence detection and are limited by a low photon collection efficiency. Here, we demonstrate a photo-electrical detection technique for electron spins of silicon vacancy ensembles in the 4H polytype of silicon carbide (SiC). Further, we show coherent spin state control, proving that this electrical readout technique enables detection of coherent spin motion. Our readout works at ambient conditions, while other electrical readout approaches are often limited to low temperatures or high magnetic fields. Considering the excellent maturity of SiC electronics with the outstanding coherence properties of SiC defects the approach presented here holds promises for scalability of future SiC quantum devices.
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Submitted 28 March, 2019;
originally announced March 2019.
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Laser writing of scalable single colour centre in silicon carbide
Authors:
Yu-Chen Chen,
Patrick S. Salter,
Matthias Niethammer,
Matthias Widmann,
Florian Kaiser,
Roland Nagy,
Naoya Morioka,
Charles Babin,
J ürgen Erlekampf,
Patrick Berwian,
Martin Booth,
J örg Wrachtrup
Abstract:
Single photon emitters in silicon carbide (SiC) are attracting attention as quantum photonic systems. However, to achieve scalable devices it is essential to generate single photon emitters at desired locations on demand. Here we report the controlled creation of single silicon vacancy ($V_{Si}$) centres in 4H-SiC using laser writing without any post-annealing process. Due to the aberration correc…
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Single photon emitters in silicon carbide (SiC) are attracting attention as quantum photonic systems. However, to achieve scalable devices it is essential to generate single photon emitters at desired locations on demand. Here we report the controlled creation of single silicon vacancy ($V_{Si}$) centres in 4H-SiC using laser writing without any post-annealing process. Due to the aberration correction in the writing apparatus and the non-annealing process, we generate single $V_{Si}$ centres with yields up to 30%, located within about 80 nm of the desired position in the transverse plane. We also investigated the photophysics of the laser writing $V_{Si}$ centres and conclude that there are about 16 photons involved in the laser writing $V_{Si}$ centres process. Our results represent a powerful tool in fabrication of single $V_{Si}$ centres in SiC for quantum technologies and provide further insights into laser writing defects in dielectric materials.
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Submitted 11 December, 2018;
originally announced December 2018.
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High-fidelity spin and optical control of single silicon vacancy centres in silicon carbide
Authors:
Roland Nagy,
Matthias Niethammer,
Matthias Widmann,
Yu-Chen Chen,
Péter Udvarhelyi,
Cristian Bonato,
Jawad Ul Hassan,
Robin Karhu,
Ivan G. Ivanov,
Nguyen Tien Son,
Jeronimo R. Maze,
Takeshi Ohshima,
Öney O. Soykal,
Ádám Gali,
Sang-Yun Lee,
Florian Kaiser,
Jörg Wrachtrup
Abstract:
Optically interfaced spins in the solid promise scalable quantum networks. Robust and reliable optical properties have so far been restricted to systems with inversion symmetry. Here, we release this stringent constraint by demonstrating outstanding optical and spin properties of single silicon vacancy centres in silicon carbide. Despite the lack of inversion symmetry, the system's particular wave…
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Optically interfaced spins in the solid promise scalable quantum networks. Robust and reliable optical properties have so far been restricted to systems with inversion symmetry. Here, we release this stringent constraint by demonstrating outstanding optical and spin properties of single silicon vacancy centres in silicon carbide. Despite the lack of inversion symmetry, the system's particular wave function symmetry decouples its optical properties from magnetic and electric fields, as well as from local strain. This provides a high-fidelity spin-to-photon interface with exceptionally stable and narrow optical transitions, low inhomogeneous broadening, and a large fraction of resonantly emitted photons. Further, the weak spin-phonon coupling results in electron spin coherence times comparable with nitrogen-vacancy centres in diamond. This allows us to demonstrate coherent hyperfine coupling to single nuclear spins, which can be exploited as qubit memories. Our findings promise quantum network applications using integrated semiconductor-based spin-to-photon interfaces.
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Submitted 24 October, 2018;
originally announced October 2018.
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Robust and efficient control of spin probes in a complex (biological) environment. Towards sensing of fast temperature fluctuations
Authors:
Philipp Konzelmann,
Torsten Rendler,
Ville Bergholm,
Andrea Zappe,
Veronika Pfannenstill,
Marwa Garsi,
Florestan Ziem,
Matthias Niethammer,
Matthias Widmann,
Sang-Yun Lee,
Philipp Neumann,
Jörg Wrachtrup
Abstract:
We present an optimized scheme for nanoscale measurements of temperature in a complex environment using the nitrogen-vacancy center in nanodiamonds. To this end we combine a Ramsey measurement utilized to temperature determination with advanced optimal control theory. We test our new design on single nitrogen-vacancy centers in bulk diamond and fixed nanodiamonds, achieving better readout signal t…
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We present an optimized scheme for nanoscale measurements of temperature in a complex environment using the nitrogen-vacancy center in nanodiamonds. To this end we combine a Ramsey measurement utilized to temperature determination with advanced optimal control theory. We test our new design on single nitrogen-vacancy centers in bulk diamond and fixed nanodiamonds, achieving better readout signal than with common soft or hard microwave control pulses. We demonstrate temperature readout using rotating nanodiamonds in an agarose matrix. Our method opens the way to measure temperature fluctuations in complex biological environment. The used principle however, is universal and not restricted to temperature sensing.
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Submitted 13 August, 2018;
originally announced August 2018.
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Quantum properties of dichroic silicon vacancies in silicon carbide
Authors:
Roland Nagy,
Matthias Widmann,
Matthias Niethammer,
Durga B. R. Dasari,
Ilja Gerhardt,
Öney O. Soykal,
Marina Radulaski,
Takeshi Ohshima,
Jelena Vučković,
Nguyen Tien Son,
Ivan G. Ivanov,
Sophia E. Economou,
Cristian Bonato,
Sang-Yun Lee,
Jörg Wrachtrup
Abstract:
The controlled generation and manipulation of atom-like defects in solids has a wide range of applications in quantum technology. Although various defect centres have displayed promise as either quantum sensors, single photon emitters or light-matter interfaces, the search for an ideal defect with multi-functional ability remains open. In this spirit, we investigate here the optical and spin prope…
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The controlled generation and manipulation of atom-like defects in solids has a wide range of applications in quantum technology. Although various defect centres have displayed promise as either quantum sensors, single photon emitters or light-matter interfaces, the search for an ideal defect with multi-functional ability remains open. In this spirit, we investigate here the optical and spin properties of the V1 defect centre, one of the silicon vacancy defects in the 4H polytype of silicon carbide (SiC). The V1 centre in 4H-SiC features two well-distinguishable sharp optical transitions and a unique S=3/2 electronic spin, which holds promise to implement a robust spin-photon interface. Here, we investigate the V1 defect at low temperatures using optical excitation and magnetic resonance techniques. The measurements, which are performed on ensemble, as well as on single centres, prove that this centre combines coherent optical emission, with up to 40% of the radiation emitted into the zero-phonon line (ZPL), a strong optical spin signal and long spin coherence time. These results single out the V1 defect in SiC as a promising system for spin-based quantum technologies.
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Submitted 16 March, 2018; v1 submitted 10 July, 2017;
originally announced July 2017.
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Scalable Quantum Photonics with Single Color Centers in Silicon Carbide
Authors:
Marina Radulaski,
Matthias Widmann,
Matthias Niethammer,
**gyuan Linda Zhang,
Sang-Yun Lee,
Torsten Rendler,
Konstantinos G. Lagoudakis,
Nguyen Tien Son,
Erik Janzén,
Takeshi Ohshima,
Jörg Wrachtrup,
Jelena Vučković
Abstract:
Silicon carbide is a promising platform for single photon sources, quantum bits (qubits) and nanoscale sensors based on individual color centers. Towards this goal, we develop a scalable array of nanopillars incorporating single silicon vacancy centers in 4H-SiC, readily available for efficient interfacing with free-space objective and lensed-fibers. A commercially obtained substrate is irradiated…
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Silicon carbide is a promising platform for single photon sources, quantum bits (qubits) and nanoscale sensors based on individual color centers. Towards this goal, we develop a scalable array of nanopillars incorporating single silicon vacancy centers in 4H-SiC, readily available for efficient interfacing with free-space objective and lensed-fibers. A commercially obtained substrate is irradiated with 2 MeV electron beams to create vacancies. Subsequent lithographic process forms 800 nm tall nanopillars with 400-1,400 nm diameters. We obtain high collection efficiency, up to 22 kcounts/s optical saturation rates from a single silicon vacancy center, while preserving the single photon emission and the optically induced electron-spin polarization properties. Our study demonstrates silicon carbide as a readily available platform for scalable quantum photonics architecture relying on single photon sources and qubits.
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Submitted 25 February, 2017; v1 submitted 8 December, 2016;
originally announced December 2016.
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Vector magnetometry using silicon vacancies in 4H-SiC at ambient conditions
Authors:
Matthias Niethammer,
Matthias Widmann,
Sang-Yun Lee,
Pontus Stenberg,
Olof Kordina,
Takeshi Ohshima,
Nguyen Tien Son,
Erik Janzén,
Jörg Wrachtrup
Abstract:
Point defects in solids promise precise measurements of various quantities. Especially magnetic field sensing using the spin of point defects has been of great interest recently. When optical readout of spin states is used, point defects achieve optical magnetic imaging with high spatial resolution at ambient conditions. Here, we demonstrate that genuine optical vector magnetometry can be realized…
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Point defects in solids promise precise measurements of various quantities. Especially magnetic field sensing using the spin of point defects has been of great interest recently. When optical readout of spin states is used, point defects achieve optical magnetic imaging with high spatial resolution at ambient conditions. Here, we demonstrate that genuine optical vector magnetometry can be realized using the silicon vacancy in SiC, which has an uncommon S=3/2 spin. To this end, we develop and experimentally test sensing protocols based on a reference field approach combined with multi frequency spin excitation. Our works suggest that the silicon vacancy in an industry-friendly platform, SiC, has potential for various magnetometry applications at ambient conditions.
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Submitted 20 September, 2016; v1 submitted 3 June, 2016;
originally announced June 2016.
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Faraday Filtering on the Cs-D$_1$-Line for Quantum Hybrid Systems
Authors:
Matthias Widmann,
Simone Portalupi,
Sang-Yun Lee,
Peter Michler,
Jörg Wrachtrup,
Ilja Gerhardt
Abstract:
Narrow-band filtering of light is widely used in optical spectroscopy. Atomic filters, which rely on the Faraday effect, allow for GHz-wide transmission spectra, which are intrinsically matched to an atomic transition. We present an experimental realization and a theoretical study of a Faraday anomalous dispersion optical filter (FADOF) based on cesium and its D$_1$-line-transition (…
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Narrow-band filtering of light is widely used in optical spectroscopy. Atomic filters, which rely on the Faraday effect, allow for GHz-wide transmission spectra, which are intrinsically matched to an atomic transition. We present an experimental realization and a theoretical study of a Faraday anomalous dispersion optical filter (FADOF) based on cesium and its D$_1$-line-transition ($6^2S_{1/2}\rightarrow6^2P_{1/2}$) around 894nm. We also present the prospects and visions for combining this filter with the single photon emission of a single quantum dot (QD), which matches with the atomic transition.
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Submitted 7 May, 2015;
originally announced May 2015.
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Single Molecule DNA Detection with an Atomic Vapor Notch Filter
Authors:
Denis Uhland,
Torsten Rendler,
Matthias Widmann,
Sang-Yun Lee,
Jörg Wrachtrup,
Ilja Gerhardt
Abstract:
The detection of single molecules has facilitated many advances in life- and material-sciences. Commonly, it founds on the fluorescence detection of single molecules, which are for example attached to the structures under study. For fluorescence microscopy and sensing the crucial parameters are the collection and detection efficiency, such that photons can be discriminated with low background from…
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The detection of single molecules has facilitated many advances in life- and material-sciences. Commonly, it founds on the fluorescence detection of single molecules, which are for example attached to the structures under study. For fluorescence microscopy and sensing the crucial parameters are the collection and detection efficiency, such that photons can be discriminated with low background from a labeled sample. Here we show a scheme for filtering the excitation light in the optical detection of single stranded labeled DNA molecules. We use the narrow-band filtering properties of a hot atomic vapor to filter the excitation light from the emitted fluorescence of a single emitter. The choice of atomic sodium allows for the use of fluorescent dyes, which are common in life-science. This scheme enables efficient photon detection, and a statistical analysis proves an enhancement of the optical signal of more than 15% in a confocal and in a wide-field configuration.
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Submitted 26 February, 2015;
originally announced February 2015.
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Electron Spin Decoherence in Silicon Carbide Nuclear Spin Bath
Authors:
Li-** Yang,
Christian Burk,
Mattias Widmann,
Sang-Yun Lee,
Jörg Wrachtrup,
Nan Zhao
Abstract:
In this paper, we study the electron spin decoherence of single defects in silicon carbide (SiC) nuclear spin bath. We find that, although the natural abundance of $^{29}\rm{Si}$ ($p_{\rm{Si}}=4.7\%$) is about 4 times larger than that of $^{13}{\rm C}$ ($p_{\rm{C}}=1.1\%$), the electron spin coherence time of defect centers in SiC nuclear spin bath in strong magnetic field ($B>300~\rm{Gauss}$) is…
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In this paper, we study the electron spin decoherence of single defects in silicon carbide (SiC) nuclear spin bath. We find that, although the natural abundance of $^{29}\rm{Si}$ ($p_{\rm{Si}}=4.7\%$) is about 4 times larger than that of $^{13}{\rm C}$ ($p_{\rm{C}}=1.1\%$), the electron spin coherence time of defect centers in SiC nuclear spin bath in strong magnetic field ($B>300~\rm{Gauss}$) is longer than that of nitrogen-vacancy (NV) centers in $^{13}{\rm C}$ nuclear spin bath in diamond. The reason for this counter-intuitive result is the suppression of heteronuclear-spin flip-flop process in finite magnetic field. Our results show that electron spin of defect centers in SiC are excellent candidates for solid state spin qubit in quantum information processing.
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Submitted 16 September, 2014;
originally announced September 2014.
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Coherent control of single spins in silicon carbide at room temperature
Authors:
Matthias Widmann,
Sang-Yun Lee,
Torsten Rendler,
Nguyen Tien Son,
Helmut Fedder,
Seoyoung Paik,
Li-** Yang,
Nan Zhao,
Sen Yang,
Ian Booker,
Andrej Denisenko,
Mohammad Jamali,
Seyed Ali Momenzadeh,
Ilja Gerhardt,
Takeshi Ohshima,
Adam Gali,
Erik Janzén,
Jörg Wrachtrup
Abstract:
Spins in solids are cornerstone elements of quantum spintronics. Leading contenders such as defects in diamond, or individual phosphorous dopants in silicon have shown spectacular progress but either miss established nanotechnology or an efficient spin-photon interface. Silicon carbide (SiC) combines the strength of both systems: It has a large bandgap with deep defects and benefits from mature fa…
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Spins in solids are cornerstone elements of quantum spintronics. Leading contenders such as defects in diamond, or individual phosphorous dopants in silicon have shown spectacular progress but either miss established nanotechnology or an efficient spin-photon interface. Silicon carbide (SiC) combines the strength of both systems: It has a large bandgap with deep defects and benefits from mature fabrication techniques. Here we report the characterization of photoluminescence and optical spin polarization from single silicon vacancies in SiC, and demonstrate that single spins can be addressed at room temperature. We show coherent control of a single defect spin and find long spin coherence time under ambient conditions. Our study provides evidence that SiC is a promising system for atomic-scale spintronics and quantum technology.
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Submitted 31 October, 2014; v1 submitted 1 July, 2014;
originally announced July 2014.
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Readout and control of a single nuclear spin with a meta-stable electron spin ancilla
Authors:
Sang-Yun Lee,
Matthias Widmann,
Torsten Rendler,
Marcus Doherty,
Thomas M. Babinec,
Sen Yang,
Moritz Eyer,
Petr Siyushev,
Birgit J. M. Haussmann,
Marko Loncar,
Zoltán Bodrog,
Adam Gali,
Neil Manson,
Helmut Fedder,
Jörg Wrachtrup
Abstract:
Electron and nuclear spins associated with point defects in insulators are promising systems for solid state quantum technology. While the electron spin usually is used for readout and addressing, nuclear spins are exquisite quantum bits and memory systems. With these systems single-shot readout of nearby nuclear spins as well as entanglement aided by the electron spin has been shown. While the el…
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Electron and nuclear spins associated with point defects in insulators are promising systems for solid state quantum technology. While the electron spin usually is used for readout and addressing, nuclear spins are exquisite quantum bits and memory systems. With these systems single-shot readout of nearby nuclear spins as well as entanglement aided by the electron spin has been shown. While the electron spin in this example is essential for readout it usually limits nuclear spin coherence. This has set of the quest for defects with spin-free ground states. Here, we isolate a hitherto unidentified defect in diamond and use it at room temperature to demonstrate optical spin polarization and readout with exceptionally high contrast (up to 45%), coherent manipulation of an individual excited triplet state spin, and coherent nuclear spin manipulation using the triplet electron spin as a meta-stable ancilla. By this we demonstrate nuclear magnetic resonance and Rabi oscillations of the uncoupled nuclear spin in the spin-free electronic ground state. Our study demonstrates that nuclei coupled to single metastable electron spins are useful quantum systems with long memory times despite electronic relaxation processes.
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Submitted 19 February, 2013;
originally announced February 2013.
