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Ultra-Thin Absorber based on Phase Change Metamaterial Superlattice
Authors:
Michael A. Mastro,
Virginia D. Wheeler
Abstract:
In this paper, a superlattice VO2/SiO2 metamaterial on a lossy substrate is designed to create a near perfect absorber with tunability across the infrared spectrum. We selected VO2 as it presents a dielectric to metal-like phase change slightly above room temperature. Additionally, the slightly lossy nature of high-temperature VO2 presents comparable and small components (real and imaginary) of th…
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In this paper, a superlattice VO2/SiO2 metamaterial on a lossy substrate is designed to create a near perfect absorber with tunability across the infrared spectrum. We selected VO2 as it presents a dielectric to metal-like phase change slightly above room temperature. Additionally, the slightly lossy nature of high-temperature VO2 presents comparable and small components (real and imaginary) of the complex refractive index across portions of the visible and infrared. Coupled with a limited conductivity substrate, VO2 has been employed to create highly absorbing/emitting structures where the thickness of the VO2 is ultra-thin (t << lambda/4n). Nevertheless, metal-like VO2 does not possess comparable and small components of the complex refractive index across the entire infrared spectrum, which limits the universality of this ultra-thin VO2 absorber design. Here we employ an ultra-thin superlattice of VO2/SiO2 to create a composite metamaterial that is readily designed for high absorbance across the infrared spectrum.
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Submitted 2 September, 2020;
originally announced September 2020.
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Experimental Demonstration of Dynamic Thermal Regulation using Vanadium Dioxide Thin Films
Authors:
Ahmed M. Morsy,
Michael T. Barako,
Vladan Jankovic,
Virginia D. Wheeler,
Mark W. Knight,
Georgia T. Papadakis,
Luke A. Sweatlock,
Philip W. C. Hon,
Michelle L. Povinelli
Abstract:
We present an experimental demonstration of passive, dynamic thermal regulation in a solid-state system with temperature-dependent thermal emissivity switching. We achieve this effect using a multilayered device, comprised of a vanadium dioxide (VO2) thin film on a silicon substrate with a gold back reflector. We experimentally characterize the optical properties of the VO2 film and use the result…
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We present an experimental demonstration of passive, dynamic thermal regulation in a solid-state system with temperature-dependent thermal emissivity switching. We achieve this effect using a multilayered device, comprised of a vanadium dioxide (VO2) thin film on a silicon substrate with a gold back reflector. We experimentally characterize the optical properties of the VO2 film and use the results to optimize device design. Using a calibrated, transient calorimetry experiment we directly measure the temperature fluctuations arising from a time-varying heat load. Under laboratory conditions, we find that the device regulates temperature better than a constant emissivity sample. We use the experimental results to validate our thermal model, which can be used to predict device performance under the conditions of outer space. In this limit, thermal fluctuations are halved with reference to a constant-emissivity sample.
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Submitted 28 February, 2020;
originally announced March 2020.
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Integration of Atomic Layer Epitaxy Crystalline Ga2O3 on Diamond for Thermal Management
Authors:
Zhe Cheng,
Virginia D. Wheeler,
Tingyu Bai,
**g**g Shi,
Marko J. Tadjer,
Tatyana Feygelson,
Karl D. Hobart,
Mark S. Goorsky,
Samuel Graham
Abstract:
Ga2O3 has attracted great attention for electronic device applications due to its ultra-wide bandgap, high breakdown electric field, and large-area affordable substrates grown from the melt. However, its thermal conductivity is significantly lower than that of other wide bandgap semiconductors, which will impact its ability to be used in high power density applications. Thermal management in Ga2O3…
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Ga2O3 has attracted great attention for electronic device applications due to its ultra-wide bandgap, high breakdown electric field, and large-area affordable substrates grown from the melt. However, its thermal conductivity is significantly lower than that of other wide bandgap semiconductors, which will impact its ability to be used in high power density applications. Thermal management in Ga2O3 electronics will be the key for device reliability, especially for high power and high frequency devices. Similar to the method of cooling GaN-based high electron mobility transistors by integrating it with high thermal conductivity diamond substrates, this work studies the possibility of heterogeneous integration of Ga2O3 with diamond for thermal management of Ga2O3 devices. In this work, Ga2O3 was deposited onto single crystal diamond substrates by ALD and the thermal properties of ALD-Ga2O3 thin films and Ga2O3-diamond interfaces with different interface pretreatments were measured by TDTR. We observed very low thermal conductivity of these Ga2O3 thin films due to the extensive phonon grain boundary scattering resulting from the nanocrystalline nature of the Ga2O3 film. However, the measured thermal boundary conductance (TBC) of the Ga2O3-diamond interfaces are about 10 times larger than that of the Van der Waals bonded Ga2O3 diamond interfaces, which indicates the significant impact of interface bonding on TBC. Furthermore, the TBC of the Ga-rich and O-rich Ga2O3-diamond interfaces are about 20% smaller than that of the clean interface, indicating interface chemistry affects interfacial thermal transport. Overall, this study shows that a high TBC can be obtained from strong interfacial bonds across Ga2O3-diamond interfaces, providing a promising route to improving the heat dissipation from Ga2O3 devices.
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Submitted 23 August, 2019;
originally announced August 2019.
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Hybrid Longitudinal-Transverse Phonon Polaritons
Authors:
Christopher R. Gubbin,
Rodrigo Berté,
Michael A. Meeker,
Alexander J. Giles,
Chase T. Ellis,
Joseph G. Tischler,
Virginia D. Wheeler,
Joshua D. Caldwell,
Simone De Liberato
Abstract:
We demonstrate how to exploit long-cell polytypes of silicon carbide to achieve strong coupling between transverse phonon polaritons and zone folded longitudinal optical phonons. The resulting quasiparticles possess hybrid longitudinal and transverse nature, allowing them to be generated through electric currents while emitting radiation to the far field. We develop a microscopic theory predicting…
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We demonstrate how to exploit long-cell polytypes of silicon carbide to achieve strong coupling between transverse phonon polaritons and zone folded longitudinal optical phonons. The resulting quasiparticles possess hybrid longitudinal and transverse nature, allowing them to be generated through electric currents while emitting radiation to the far field. We develop a microscopic theory predicting the existence of the hybrid longitudinal-transverse excitations. We then provide their first experimental observation by tuning the monopolar resonance of a nanopillar array through the folded longitudinal optical mode, obtaining a clear spectral anti-crossing. This represents an important first step in the development of electrically pumped mid-infrared emitters.
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Submitted 28 July, 2018;
originally announced July 2018.
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Water affinity to epitaxial graphene: the impact of layer thickness
Authors:
Cristina E. Giusca,
Vishal Panchal,
Martin Munz,
Virginia D. Wheeler,
Luke O. Nyakiti,
Rachael L. Myers-Ward,
D. Kurt Gaskill,
Olga Kazakova
Abstract:
The sensitivity to water of epitaxial graphene is examined in this study.
The sensitivity to water of epitaxial graphene is examined in this study.
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Submitted 26 April, 2018;
originally announced April 2018.
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Temperature and Electric Field Induced Metal-Insulator Transition in Atomic Layer Deposited Vanadium Dioxide Thin Films
Authors:
Marko J. Tadjer,
Virginia D. Wheeler,
Brian P. Downey,
Zachary R. Robinson,
David J. Meyer,
Charles R. Eddy, Jr.,
Fritz J. Kub
Abstract:
Amorphous vanadium dioxide (VO$_{2}$) films deposited by atomic layer deposition (ALD) were crystallized with an ex situ anneal at 660-670 $°$C for 1-2 hours under a low oxygen pressure (10$^{-4}$ to 10$^{-5}$ Torr). Under these conditions the crystalline VO$_{2}$ phase was maintained, while formation of the V$_{2}$O$_{5}$ phase was suppressed. Electrical transition from the insulator to the metal…
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Amorphous vanadium dioxide (VO$_{2}$) films deposited by atomic layer deposition (ALD) were crystallized with an ex situ anneal at 660-670 $°$C for 1-2 hours under a low oxygen pressure (10$^{-4}$ to 10$^{-5}$ Torr). Under these conditions the crystalline VO$_{2}$ phase was maintained, while formation of the V$_{2}$O$_{5}$ phase was suppressed. Electrical transition from the insulator to the metallic phase was observed in the 37-60 $°$C range, with a R$_{ON}$/R$_{OFF}$ ratio of up to about 750 and critical transition temperature of 7-10 $°$C. Electric field applied across two-terminal device structures induced a reversible phase change, with a room temperature transition field of about 25 kV/cm in the VO$_{2}$ sample processed with the 2 hr long anneal. Both the width and slope of the field induced MIT hysteresis were dependent upon the VO$_{2}$ crystalline quality.
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Submitted 19 February, 2016;
originally announced February 2016.
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Functionalized graphene as a model system for the two-dimensional metal-insulator transition
Authors:
M. S. Osofsky,
S. C. Hernández,
A. Nath,
V. D. Wheeler,
S. Walton,
C. M. Krowne,
D. K. Gaskill
Abstract:
Reports of metallic behavior in two-dimensional (2D) systems such as high mobility metal-oxide field effect transistors, insulating oxide interfaces, graphene, and MoS2 have challenged the well-known prediction of Abrahams, et al. that all 2D systems must be insulating. The existence of a metallic state for such a wide range of 2D systems thus reveals a wide gap in our understanding of 2D transpor…
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Reports of metallic behavior in two-dimensional (2D) systems such as high mobility metal-oxide field effect transistors, insulating oxide interfaces, graphene, and MoS2 have challenged the well-known prediction of Abrahams, et al. that all 2D systems must be insulating. The existence of a metallic state for such a wide range of 2D systems thus reveals a wide gap in our understanding of 2D transport that has become more important as research in 2D systems expands. A key to understanding the 2D metallic state is the metal-insulator transition (MIT). In this report, we demonstrate the existence of a disorder induced MIT in functionalized graphene, a model 2D system. Magneto-transport measurements show that weak-localization overwhelmingly drives the transition, in contradiction to theoretical assumptions that enhanced electron-electron interactions dominate. These results provide the first detailed picture of the nature of the transition from the metallic to insulating states of a 2D system.
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Submitted 26 May, 2015;
originally announced May 2015.
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Graphene Manipulation on 4H-SiC(0001) Using Scanning Tunneling Microscopy
Authors:
P. Xu,
M. L. Ackerman,
S. D. Barber,
J. K. Schoelz,
D. Qi,
P. M. Thibado,
V. D. Wheeler,
L. O. Nyakiti,
R. L. Myers-Ward,
C. R. Eddy, Jr.,
D. K. Gaskill
Abstract:
Atomic-scale topography of epitaxial multilayer graphene grown on 4H-SiC(0001) was investigated using scanning tunneling microscopy (STM). Bunched nano-ridges ten times smaller than previously recorded were observed throughout the surface, the morphology of which was systematically altered using a relatively new technique called electrostatic-manipulation scanning tunneling microscopy. Transformed…
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Atomic-scale topography of epitaxial multilayer graphene grown on 4H-SiC(0001) was investigated using scanning tunneling microscopy (STM). Bunched nano-ridges ten times smaller than previously recorded were observed throughout the surface, the morphology of which was systematically altered using a relatively new technique called electrostatic-manipulation scanning tunneling microscopy. Transformed graphene formations sometimes spontaneously returned to their original morphology, while others permanently changed. Using an electrostatic model, we calculate that a force up to ~5 nN was exerted by the STM tip, and an energy of around 10 eV was required to alter the geometry of a ~100 X 200 nm^2 area.
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Submitted 27 January, 2015;
originally announced January 2015.
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Atomic-Scale Movement Induced in Nano-Ridges by Scanning Tunneling Microscopy on Epitaxial Graphene Grown on 4H-SiC(0001)
Authors:
P. Xu,
S. D. Barber,
J. K. Schoelz,
M. L. Ackerman,
D. Qi,
P. M. Thibado,
V. D. Wheeler,
L. O. Nyakiti,
R. L. Myers-Ward,
C. R. Eddy Jr.,
D. K. Gaskill
Abstract:
Nanoscale ridges in epitaxial multilayer graphene grown on the silicon face of 4 degree off-cut 4H-SiC (0001) were found using scanning tunneling microscopy (STM). These nano-ridges are only 0.1 nm high and 25-50 nm wide, making them much smaller than previously reported ridges. Atomic-resolution STM was performed near and on top of the nano-ridges using a dual scanning technique in which forward…
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Nanoscale ridges in epitaxial multilayer graphene grown on the silicon face of 4 degree off-cut 4H-SiC (0001) were found using scanning tunneling microscopy (STM). These nano-ridges are only 0.1 nm high and 25-50 nm wide, making them much smaller than previously reported ridges. Atomic-resolution STM was performed near and on top of the nano-ridges using a dual scanning technique in which forward and reverse images are simultaneously recorded. An apparent 100% enlarged graphene lattice constant is observed along the leading edge of the image for both directions. Horizontal movement of the graphene, due to both an electrostatic attraction to the STM tip and weak bonding to the substrate, is thought to contribute to the results.
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Submitted 23 January, 2015;
originally announced January 2015.
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Competing scanning tunneling microscope tip-interlayer interactions for twisted multilayer graphene on the a-plane SiC surface
Authors:
P. Xu,
M. L. Ackerman,
S. D. Barber,
J. K. Schoelz,
P. M. Thibado,
V. D. Wheeler,
L. O. Nyakiti,
R. L. Myers-Ward,
C. R. Eddy Jr.,
D. K. Gaskill
Abstract:
Scanning tunneling microscopy (STM) images are obtained for the first time on few layer and twisted multilayer epitaxial graphene states synthesized on n+ 6H-SiC a-plane non-polar surface. The twisted graphene is determined to have a rotation angle of 5.4° between the top two layers, by comparing moiré patterns from stick and ball models of bilayer graphene to experimentally obtained images. Furth…
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Scanning tunneling microscopy (STM) images are obtained for the first time on few layer and twisted multilayer epitaxial graphene states synthesized on n+ 6H-SiC a-plane non-polar surface. The twisted graphene is determined to have a rotation angle of 5.4° between the top two layers, by comparing moiré patterns from stick and ball models of bilayer graphene to experimentally obtained images. Furthermore, the experimental moiré pattern shows dynamic behavior, continuously shuffling between two stable surface arrangements one bond length apart. The moiré pattern shifts by more than 1 nm, making it easy to observe with STM. Explanation of this dynamic behavior is attributed to electrostatic interactions between the STM tip and the graphene sample.
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Submitted 20 January, 2015;
originally announced January 2015.
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Multilayer graphene, Moiré patterns, grain boundaries and defects identified by scanning tunneling microscopy on the m-plane, non-polar surface of SiC
Authors:
P. Xu,
D. Qi,
J. K. Schoelz,
J. Thompson,
P. M. Thibado,
V. D. Wheeler,
L. O. Nyakiti,
R. L. Myers-Ward,
C. R. Eddy Jr.,
D. K. Gaskill,
M. Neek-Amal,
F. M. Peeters
Abstract:
Epitaxial graphene is grown on a non-polar n+ 6H-SiC m-plane substrate and studied using atomic scale scanning tunneling microscopy. Multilayer graphene is found throughout the surface and exhibits rotational disorder. Moiré patterns of different spatial periodicities are found, and we found that as the wavelength increases, so does the amplitude of the modulations. This relationship reveals infor…
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Epitaxial graphene is grown on a non-polar n+ 6H-SiC m-plane substrate and studied using atomic scale scanning tunneling microscopy. Multilayer graphene is found throughout the surface and exhibits rotational disorder. Moiré patterns of different spatial periodicities are found, and we found that as the wavelength increases, so does the amplitude of the modulations. This relationship reveals information about the interplay between the energy required to bend graphene and the interaction energy, i.e. van der Waals energy, with the graphene layer below. Our experiments are supported by theoretical calculations which predict that the membrane topographical amplitude scales with the Moiré pattern wavelength, L as L^-1 + αL^-2.
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Submitted 30 December, 2014;
originally announced December 2014.
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Towards pristine graphene-metal interface and microstructures: Laser assisted direct patterning on Epitaxial graphene
Authors:
A. Nath,
M. Currie,
V. D. Wheeler,
M. J. Tadjer,
A. D. Koehler,
Z. R. Robinson,
K. Sridhara,
S. C. Hernandez,
J. A. Wollmershauser,
J. T Robinson,
R. L. Myers-Ward,
C. R. Eddy, Jr.,
M. V. Rao,
D. K. Gaskill
Abstract:
Graphene-metal contact resistance is governed by both intrinsic and extrinsic factors. Intrinsically, both the density of states bottleneck near the Dirac point and carrier reflection at the graphene-metal interface lead to a high contact resistance. Moreover, graphene exhibits insulating behavior for out-of-the-plane conduction. Extrinsically, surface contamination introduced by photoresist resid…
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Graphene-metal contact resistance is governed by both intrinsic and extrinsic factors. Intrinsically, both the density of states bottleneck near the Dirac point and carrier reflection at the graphene-metal interface lead to a high contact resistance. Moreover, graphene exhibits insulating behavior for out-of-the-plane conduction. Extrinsically, surface contamination introduced by photoresist residue or different adsorbed species during standard lithography processing alters graphene's intrinsic properties by uncontrolled do** and increased scattering which results in high and inconsistent contact resistance. Here we demonstrate a femto-second laser assisted direct patterning of graphene microstructures that enables us to study both intrinsic and extrinsic effects on the graphene-metal interface. We show that a clean graphene-metal interface is not sufficient to obtain contact resistance approaching the intrinsic limit set by the quantum resistance. We also demonstrated that unlike CVD graphene, edge state conduction (or end-contact) is not spontaneously formed by metal deposition in case of graphene grown on SiC(0001). We conclude that for epitaxial graphene, intentional end-contact formation is necessary to obtain contact resistance near the quantum contact resistance limit.
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Submitted 19 November, 2014;
originally announced November 2014.
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Hot carrier relaxation of Dirac fermions in bilayer epitaxial graphene
Authors:
J. Huang,
J. A. Alexander-Webber,
T. J. B. M. Janssen,
A. Tzalenchuk,
T. Yager,
S. Lara-Avila,
S. Kubatkin,
R. L. Myers-Ward,
V. D. Wheeler,
D. K. Gaskill,
R. J. Nicholas
Abstract:
Energy relaxation of hot Dirac fermions in bilayer epitaxial graphene is experimentally investigated by magnetotransport measurements on Shubnikov-de Haas oscillations and weak localization. The hot-electron energy loss rate is found to follow the predicted Bloch-Grüneisen power-law behaviour of $T^4$ at carrier temperatures from 1.4 K up to $\sim$100 K, due to electron-acoustic phonon interaction…
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Energy relaxation of hot Dirac fermions in bilayer epitaxial graphene is experimentally investigated by magnetotransport measurements on Shubnikov-de Haas oscillations and weak localization. The hot-electron energy loss rate is found to follow the predicted Bloch-Grüneisen power-law behaviour of $T^4$ at carrier temperatures from 1.4 K up to $\sim$100 K, due to electron-acoustic phonon interactions with a deformation potential coupling constant of 22 eV. A carrier density dependence $n_e^{-1.5}$ in the scaling of the $T^4$ power law is observed in bilayer graphene, in contrast to the $n_e^{-0.5}$ dependence in monolayer graphene, leading to a crossover in the energy loss rate as a function of carrier density between these two systems. The electron-phonon relaxation time in bilayer graphene is also shown to be strongly carrier density dependent, while it remains constant for a wide range of carrier densities in monolayer graphene. Our results and comparisons between the bilayer and monolayer exhibit a more comprehensive picture of hot carrier dynamics in graphene systems.
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Submitted 22 September, 2014;
originally announced September 2014.
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Membrane amplitude and triaxial stress in twisted bilayer graphene deciphered using first-principles directed elasticity theory and scanning tunneling microscopy
Authors:
M. Neek-Amal,
P. Xu,
D. Qi,
P. M. Thibado,
L. O. Nyakiti,
V. D. Wheeler,
R. L. Myers-Ward,
C. R. Eddy Jr.,
D. K. Gaskill,
F. M. Peeters
Abstract:
Twisted graphene layers produce a moiré pattern (MP) structure with a predetermined wavelength for given twist angle. However, predicting the membrane corrugation amplitude for any angle other than pure AB-stacked or AA-stacked graphene is impossible using first-principles density functional theory (DFT) due to the large supercell. Here, within elasticity theory we define the MP structure as the m…
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Twisted graphene layers produce a moiré pattern (MP) structure with a predetermined wavelength for given twist angle. However, predicting the membrane corrugation amplitude for any angle other than pure AB-stacked or AA-stacked graphene is impossible using first-principles density functional theory (DFT) due to the large supercell. Here, within elasticity theory we define the MP structure as the minimum energy configuration, thereby leaving the height amplitude as the only unknown parameter. The latter is determined from DFT calculations for AB and AA stacked bilayer graphene in order to eliminate all fitting parameters. Excellent agreement with scanning tunneling microscopy (STM) results across multiple substrates is reported as function of twist angle.
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Submitted 4 July, 2014;
originally announced July 2014.
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Graphene Nanoribbon Field-Effect Transistors on Wafer-Scale Epitaxial Graphene on SiC substrates
Authors:
Wan Sik Hwang,
Pei Zhao,
Kristof Tahy,
Luke O. Nyakiti,
Virginia D. Wheeler,
Rachael. L. Myers-Ward,
Charles R. Eddy Jr.,
D. Kurt Gaskill,
Joshua A. Robinson,
Wilfried Haensch,
Huili,
Xing,
Alan Seabaugh,
Debdeep Jena
Abstract:
We report the realization of top-gated graphene nanoribbon field effect transistors (GNRFETs) of ~10 nm width on large-area epitaxial graphene exhibiting the opening of a band gap of ~0.14 eV. Contrary to prior observations of disordered transport and severe edge-roughness effects of GNRs, the experimental results presented here clearly show that the transport mechanism in carefully fabricated GNR…
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We report the realization of top-gated graphene nanoribbon field effect transistors (GNRFETs) of ~10 nm width on large-area epitaxial graphene exhibiting the opening of a band gap of ~0.14 eV. Contrary to prior observations of disordered transport and severe edge-roughness effects of GNRs, the experimental results presented here clearly show that the transport mechanism in carefully fabricated GNRFETs is conventional band-transport at room temperature, and inter-band tunneling at low temperature. The entire space of temperature, size, and geometry dependent transport properties and electrostatics of the GNRFETs are explained by a conventional thermionic emission and tunneling current model. Our combined experimental and modeling work proves that carefully fabricated narrow GNRs behave as conventional semiconductors, and remain potential candidates for electronic switching devices.
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Submitted 25 October, 2013;
originally announced October 2013.
