-
Telecom-Band SPDC in AlGaAs-on-Insulator Waveguides
Authors:
Marlon Placke,
Jan Schlegel,
Felix Mann,
Pietro Della Casa,
Andreas Thies,
Markus Weyers,
Günther Tränkle,
Sven Ramelow
Abstract:
Widespread commercial adoption of telecom-band quantum-key-distribution (QKD) will require fully integrated, room-temperature transmitters. Implementing highly efficient spontaneous parametric down-conversion (SPDC) on a platform that offers co-integration of the pump laser has been an outstanding challenge. Here, using such a platform based on AlGaAs-on-insulator waveguides, we report telecom-ban…
▽ More
Widespread commercial adoption of telecom-band quantum-key-distribution (QKD) will require fully integrated, room-temperature transmitters. Implementing highly efficient spontaneous parametric down-conversion (SPDC) on a platform that offers co-integration of the pump laser has been an outstanding challenge. Here, using such a platform based on AlGaAs-on-insulator waveguides, we report telecom-band SPDC (and second harmonic generation) with exceedingly large efficiencies of 26 GHz generated pairs/mW over a 7 THz bandwidth, which would saturate the usable photon-flux for a 70-channel wavelength-multiplexed QKD-system at merely 1.6 mW of pump laser power.
△ Less
Submitted 12 December, 2023;
originally announced December 2023.
-
AlGaN/AlN heterostructures: an emerging platform for nonlinear integrated photonics
Authors:
Sinan Gündogdu,
Sofia Pazzagli,
Tommaso Pregnolato,
Tim Kolbe,
Sylvia Hagedorn,
Markus Weyers,
Tim Schröder
Abstract:
In the rapidly evolving area of integrated photonics, there is a growing need for materials that satisfy the particular requirements of increasingly complex and specialized devices and applications. Present photonic material platforms have made significant progress over the past years; however, each platform still faces specific material and performance challenges. We introduce a novel material fo…
▽ More
In the rapidly evolving area of integrated photonics, there is a growing need for materials that satisfy the particular requirements of increasingly complex and specialized devices and applications. Present photonic material platforms have made significant progress over the past years; however, each platform still faces specific material and performance challenges. We introduce a novel material for integrated photonics: Aluminum Gallium Nitride (AlGaN) on Aluminum Nitride (AlN) as a platform for develo** reconfigurable and nonlinear on-chip optical systems. AlGaN combines compatibility with standard semiconductor fabrication technologies, high electro-optic modulation capabilities, and large nonlinear coefficients while providing a broad and low-loss spectral transmission range, making it a viable material for advanced photonic applications. In this work, we design and grow AlGaN/AlN heterostructures and integrate fundamental photonic building blocks into these chips. In particular, we fabricate edge couplers, low-loss waveguides, directional couplers, and tunable high-quality factor ring resonators to enable nonlinear light-matter interaction and quantum functionality. The comprehensive platform we present in this work paves the way for nonlinear photon-pair generation applications, on-chip nonlinear quantum frequency conversion, and fast electro-optic modulation for switching and routing classical and quantum light fields.
△ Less
Submitted 1 May, 2024; v1 submitted 5 December, 2023;
originally announced December 2023.
-
Fingerprints of carbon defects in vibrational spectra of gallium nitride (GaN) consider-ing the isotope effect
Authors:
I. Gamov,
J. L. Lyons,
G. Gärtner,
K. Irmscher,
E. Richter,
M. Weyers,
M. R. Wagner,
M. Bickermann
Abstract:
This work examines the carbon defects associated with recently reported and novel peaks of infrared (IR) absorption and Raman scattering appearing in GaN crystals at carbon ($^{12}C$) do** in the range of concentrations from $3.2*10^{17}$ to $3.5*10^{19} cm^{-3}$. 14 unique vibrational modes of defects are observed in GaN samples grown by hydride vapor phase epitaxy (HVPE) and then compared with…
▽ More
This work examines the carbon defects associated with recently reported and novel peaks of infrared (IR) absorption and Raman scattering appearing in GaN crystals at carbon ($^{12}C$) do** in the range of concentrations from $3.2*10^{17}$ to $3.5*10^{19} cm^{-3}$. 14 unique vibrational modes of defects are observed in GaN samples grown by hydride vapor phase epitaxy (HVPE) and then compared with defect properties predicted from first-principles calculations. The vibrational frequency shift in two $^{13}C$ enriched samples related to the effect of the isotope mass indicates six distinct configurations of the carbon-containing point defects. The effect of the isotope replacement is well reproduced by the density functional theory (DFT) calculations. Specific attention is paid to the most pronounced defects, namely tri-carbon complexes($C_N=C=C_N$) and carbon substituting for nitrogen $C_N$. The position of the transition level (+/0) in the bandgap found for $C_N=C=C_N$ defects by DFT at 1.1 eV above the valence band maximum, suggest that $(C_N=C=C_N)^+$ provides compensation of ${C_N}^-$. $C_N=C=C_N$ defects are observed to be prominent, yet have high formation energies in DFT calculations. Regarding ${C_N}$ defects, it is shown that the host Ga and N atoms are involved in the defect's delocalized vibrations and significantly affect the isotopic frequency shift. Much more faint vibrational modes are found from di-atomic carbon-carbon and carbon-hydrogen (C-H) complexes. Also, we note changes of vibrational mode intensities of $C_N$, $C_N=C=C_N$, C-H, and $C_N-C_i$ defects in the IR absorption spectra upon irradiation in the defect-related UV/visible absorption range. Finally, it is demonstrated that the resonant enhancement of the Raman process in the range of defect absorption above 2.5 eV enables the detection of defects at carbon do** concentrations as low as $3.2*10^{17} cm^{-3}$.
△ Less
Submitted 22 September, 2022;
originally announced September 2022.
-
Carbon do** of GaN: Proof of the formation of electrically active tri-carbon defects
Authors:
Ivan Gamov,
Eberhard Richter,
Markus Weyers,
Günter Gärtner,
Klaus Irmscher,
Leibniz-Institut für Kristallzüchtung,
Berlin,
Germany,
Ferdinand-Braun-Institut,
Leibniz-Institut für Höchstfrequenztechnik,
Berlin,
Germany,
Institute of Experimental Physics,
TU Bergakademie Freiberg,
Freiberg,
Germany
Abstract:
Carbon do** is used to obtain semi-insulating GaN crystals. If the carbon do** concentration exceeds $5*10^{17}$ $cm^{-3}$, the carbon atoms increasingly form triatomic clusters. The tri-carbon defect structure is unambiguously proven by the isotope effect on the defects' local vibrational modes (LVMs) originally found in samples containing carbon of natural isotopic composition $(~99 $%…
▽ More
Carbon do** is used to obtain semi-insulating GaN crystals. If the carbon do** concentration exceeds $5*10^{17}$ $cm^{-3}$, the carbon atoms increasingly form triatomic clusters. The tri-carbon defect structure is unambiguously proven by the isotope effect on the defects' local vibrational modes (LVMs) originally found in samples containing carbon of natural isotopic composition $(~99 $%$ ^{12}C, ~1$%$ ^{13}C)$ at $1679$ $cm^{-1}$ and $1718$ $cm^{-1}$. Number, spectral positions, and intensities of the LVMs for samples enriched with the $^{13}C$ isotope (~99 % and ~50 %) are consistently interpreted on the basis of the harmonic oscillator model taking into account the probability of possible isotope combinations. Including the polarization dependence of the LVM absorption, we show that the tri-carbon defects form a triatomic molecule-like structure in two crystallographically different configurations: a basal configuration with the carbon bonds near the basal plane and an axial configuration with one of the carbon bonds along the c-axis. Finally, the disappearance of the LVMs under additional below-bandgap illumination is interpreted as defect recharging, i.e. the tri-carbon defects possess at least one charge state transition level within the bandgap and contribute to optical absorption as well as to the electrical charge balance.
△ Less
Submitted 6 April, 2020;
originally announced April 2020.
-
Precision determination of band offsets in strained InGaAs/GaAs quantum wells by C-V-profiling and Schroedinger-Poisson self-consistent simulation
Authors:
V. I. Zubkov,
M. A. Melnik,
A. V. Solomonov,
E. O. Tsvelev,
F. Bugge,
M. Weyers,
G. Traenkle
Abstract:
The results of measurements and numerical simulation of charge carrier distribution and energy states in strained quantum wells In_xGa_{1-x}As/GaAs (0.06 < x < 0.29) by C-V-profiling are presented. Precise values of conduction band offsets for these pseudomorphic QWs have been obtained by means of self-consistent solution of Schroedinger and Poisson equations and following fitting to experimenta…
▽ More
The results of measurements and numerical simulation of charge carrier distribution and energy states in strained quantum wells In_xGa_{1-x}As/GaAs (0.06 < x < 0.29) by C-V-profiling are presented. Precise values of conduction band offsets for these pseudomorphic QWs have been obtained by means of self-consistent solution of Schroedinger and Poisson equations and following fitting to experimental data. For the conduction band offsets in strained In_xGa_{1-x}As/GaAs - QWs the expression DE_C(x) = 0.814x - 0.21x^2 has been obtained.
△ Less
Submitted 4 July, 2003;
originally announced July 2003.
