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Additive GaN solid immersion lenses for enhanced photon extraction efficiency from diamond color centers
Authors:
Xingrui Cheng,
Nils Kolja Wessling,
Saptarsi Ghosh,
Andrew R. Kirkpatrick,
Menno J. Kappers,
Yashna N. D. Lekhai,
Gavin W. Morley,
Rachel A. Oliver,
Jason M. Smith,
Martin D. Dawson,
Patrick S. Salter,
Michael J. Strain
Abstract:
Effective light extraction from optically active solid-state spin centres inside high-index semiconductor host crystals is an important factor in integrating these pseudo-atomic centres in wider quantum systems. Here we report increased fluorescent light collection efficiency from laser-written nitrogen vacancy centers (NV) in bulk diamond facilitated by micro-transfer printed GaN solid immersion…
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Effective light extraction from optically active solid-state spin centres inside high-index semiconductor host crystals is an important factor in integrating these pseudo-atomic centres in wider quantum systems. Here we report increased fluorescent light collection efficiency from laser-written nitrogen vacancy centers (NV) in bulk diamond facilitated by micro-transfer printed GaN solid immersion lenses. Both laser-writing of NV centres and transfer printing of micro-lens structures are compatible with high spatial resolution, enabling deterministic fabrication routes towards future scalable systems development. The micro-lenses are integrated in a non-invasive manner, as they are added on top of the unstructured diamond surface and bond by Van-der-Waals forces. For emitters at 5 micrometer depth, we find approximately 2x improvement of fluorescent light collection using an air objective with a numerical aperture of NA = 0.95 in good agreement with simulations. Similarly, the solid immersion lenses strongly enhance light collection when using an objective with NA = 0.5, significantly improving the signal-to-noise ratio of the NV center emission while maintaining the NV's quantum properties after integration.
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Submitted 20 June, 2023;
originally announced June 2023.
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Photonic integration of lithium niobate micro-ring resonators onto silicon nitride waveguide chips by transfer-printing
Authors:
Zhibo Li,
Jack A. Smith,
Mark Scullion,
Nils Kolja Wessling,
Loyd J. McKnight,
Martin D. Dawson,
Michael J. Strain
Abstract:
The heterogeneous integration of lithium niobate photonic waveguide devices onto a silicon nitride waveguide platform via a transfer-printing approach has been demonstrated for the first time. A fabrication process was developed to make free-standing lithium niobate membrane devices compatible with back-end integration onto photonic integrated circuits. Micro-ring resonators in membrane format wer…
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The heterogeneous integration of lithium niobate photonic waveguide devices onto a silicon nitride waveguide platform via a transfer-printing approach has been demonstrated for the first time. A fabrication process was developed to make free-standing lithium niobate membrane devices compatible with back-end integration onto photonic integrated circuits. Micro-ring resonators in membrane format were lithographically defined by using laser direct writing and plasma dry etching. The lithium niobate micro-ring resonators were then transferred from their host substrate and released onto a silicon nitride waveguide chip. An all-pass ring resonator transmission spectrum was obtained in the 1.5 μm to 1.6 μm wavelength range, with a measured loaded Q-factor larger than 32000.
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Submitted 8 September, 2022; v1 submitted 25 August, 2022;
originally announced August 2022.
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Fabrication and transfer print based integration of free-standing GaN membrane micro-lenses onto semiconductor chips
Authors:
Nils Kolja Wessling,
Saptarsi Ghosh,
Benoit Guilhabert,
Menno Kappers,
Miles Toon,
Rachel A. Oliver,
Martin D. Dawson,
Michael J. Strain
Abstract:
We demonstrate the back-end integration of broadband, high-NA GaN micro-lenses by micro-assembly onto non-native semiconductor substrates. We developed a highly parallel micro-fabrication process flow to suspend micron scale plano-convex lens platelets from 6" Si growth wafers and show their subsequent transfer-printing integration. A growth process targeted at producing unbowed epitaxial wafers w…
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We demonstrate the back-end integration of broadband, high-NA GaN micro-lenses by micro-assembly onto non-native semiconductor substrates. We developed a highly parallel micro-fabrication process flow to suspend micron scale plano-convex lens platelets from 6" Si growth wafers and show their subsequent transfer-printing integration. A growth process targeted at producing unbowed epitaxial wafers was combined with optimisation of the etching volume in order to produce flat devices for printing. Lens structures were fabricated with 6 to 11 $μ$m diameter, 2 $μ$m height and root-mean-squared surface roughness below 2 nm. The lenses were printed in a vertically coupled geometry on a single crystalline diamond substrate and with $μ$m-precise placement on a horizontally coupled photonic integrated circuit waveguide facet. Optical performance analysis shows that these lenses could be used to couple to diamond nitrogen vacancy centres at micron scale depths and demonstrates their potential for visible to infrared light-coupling applications.
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Submitted 19 September, 2022; v1 submitted 10 August, 2022;
originally announced August 2022.
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High-performance broadband Faraday rotation spectroscopy of 2D materials and thin magnetic films
Authors:
Benjamin Carey,
Nils Kolja Wessling,
Paul Steeger,
Christoph Klusmann,
Robert Schneider,
Mario Fix,
Robert Schmidt,
Manfred Albrecht,
Steffen Michaelis de Vasconcellos,
Rudolf Bratschitsch,
Ashish Arora
Abstract:
We present a Faraday rotation spectroscopy (FRS) technique for measurements on the micron scale. Spectral acquisition speeds of many orders of magnitude faster than state-of-the-art modulation spectroscopy setups are demonstrated. The experimental method is based on charge-coupled-device detection, avoiding speed-limiting components, such as polarization modulators with lock-in amplifiers. At the…
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We present a Faraday rotation spectroscopy (FRS) technique for measurements on the micron scale. Spectral acquisition speeds of many orders of magnitude faster than state-of-the-art modulation spectroscopy setups are demonstrated. The experimental method is based on charge-coupled-device detection, avoiding speed-limiting components, such as polarization modulators with lock-in amplifiers. At the same time, FRS spectra are obtained with a sensitivity of 20 $μ$rad (0.001$^\circ$) over a broad spectral range (525 nm - 800 nm), which is on par with state-of-the-art polarization-modulation techniques. The new measurement technique also automatically cancels unwanted Faraday rotation backgrounds. Using the setup, we perform Faraday rotation spectroscopy of excitons in a hBN-encapsulated atomically thin semiconductor WS$_2$ under magnetic fields of up to 1.4 T at room temperature and liquid helium temperature. We determine the A exciton g-factor of -4.4 $\pm$ 0.3 at room temperature, and -4.2 $\pm$ 0.2 at liquid helium temperature. In addition, we perform FRS and hysteresis loop measurements on a 20 nm thick film of an amorphous magnetic Tb$_{0.2}$Fe$_{0.8}$ alloy.
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Submitted 27 April, 2022;
originally announced April 2022.
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Dark trions govern the temperature-dependent optical absorption and emission of doped atomically thin semiconductors
Authors:
Ashish Arora,
Nils Kolja Wessling,
Thorsten Deilmann,
Till Reichenauer,
Paul Steeger,
Piotr Kossacki,
Marek Potemski,
Steffen Michaelis de Vasconcellos,
Michael Rohlfing,
Rudolf Bratschitsch
Abstract:
We perform absorption and photoluminescence spectroscopy of trions in hBN-encapsulated WSe$_2$, WS$_2$, MoSe$_2$, and MoS$_2$ monolayers, depending on temperature. The different trends for W- and Mo-based materials are excellently reproduced considering a Fermi-Dirac distribution of bright and dark trions. We find a dark trion, $\rm{X_D^-}$ 19 meV $\textit{below}$ the lowest bright trion,…
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We perform absorption and photoluminescence spectroscopy of trions in hBN-encapsulated WSe$_2$, WS$_2$, MoSe$_2$, and MoS$_2$ monolayers, depending on temperature. The different trends for W- and Mo-based materials are excellently reproduced considering a Fermi-Dirac distribution of bright and dark trions. We find a dark trion, $\rm{X_D^-}$ 19 meV $\textit{below}$ the lowest bright trion, $\rm{X}_1^-$ in WSe$_2$ and WS$_2$. In MoSe$_2$, $\rm{X_D^-}$ lies 6 meV $\textit{above}$ $\rm{X}_1^-$, while $\rm{X_D^-}$ and $\rm{X}_1^-$ almost coincide in MoS$_2$. Our results agree with GW-BSE $\textit{ab-initio}$ calculations and quantitatively explain the optical response of doped monolayers with temperature.
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Submitted 25 June, 2020; v1 submitted 14 November, 2019;
originally announced November 2019.
