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Second-harmonic generation induced by electric currents in GaAs
Authors:
Brian A. Ruzicka,
Lalani K. Werake,
Guowei Xu,
Jacob B. Khurgin,
E. Ya. Sherman,
Judy Z. Wu,
Hui Zhao
Abstract:
We demonstrate a new, nonlinear optical effect of electric currents. First, a steady current is generated by applying a voltage on a doped GaAs crystal. We demonstrate that this current induces second-harmonic generation of a probe laser pulse. Second, we optically inject a transient current in an undoped GaAs crystal by using a pair of ultrafast laser pulses, and demonstrate that it induces the s…
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We demonstrate a new, nonlinear optical effect of electric currents. First, a steady current is generated by applying a voltage on a doped GaAs crystal. We demonstrate that this current induces second-harmonic generation of a probe laser pulse. Second, we optically inject a transient current in an undoped GaAs crystal by using a pair of ultrafast laser pulses, and demonstrate that it induces the same second-harmonic generation. In both cases, the induced second-order nonlinear susceptibility is proportional to the current density. This effect can be used for nondestructive, noninvasive, and ultrafast imaging of currents. These advantages are illustrated by the real-time observations of a coherent plasma oscillation and spatial resolution of current distribution in a device. This new effect also provides a mechanism for electrical control of the optical response of materials.
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Submitted 21 December, 2011;
originally announced December 2011.
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Observation of intrinsic inverse spin Hall effect
Authors:
Lalani K. Werake,
Brian A. Ruzicka,
Hui Zhao
Abstract:
We report observation of intrinsic inverse spin Hall effect in un-doped GaAs multiple quantum wells with a sample temperature of 10 K. A transient ballistic pure spin current is injected by a pair of laser pulses through quantum interference. By time-resolving the dynamics of the pure spin current, the momentum relaxation time is deduced, which sets the lower limit of the scattering time between e…
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We report observation of intrinsic inverse spin Hall effect in un-doped GaAs multiple quantum wells with a sample temperature of 10 K. A transient ballistic pure spin current is injected by a pair of laser pulses through quantum interference. By time-resolving the dynamics of the pure spin current, the momentum relaxation time is deduced, which sets the lower limit of the scattering time between electrons and holes. The transverse charge current generated by the pure spin current via the inverse spin Hall effect is simultaneously resolved. We find that the charge current is generated well before the first electron-hole scattering event. Generation of the transverse current in the scattering-free ballistic transport regime provides unambiguous evidence for the intrinsic inverse spin Hall effect.
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Submitted 9 March, 2011; v1 submitted 9 February, 2011;
originally announced February 2011.
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Observation of second-harmonic generation induced by pure spin currents
Authors:
Lalani K. Werake,
Hui Zhao
Abstract:
Extensive efforts are currently being devoted to develo** a new electronic technology, called spintronics, where the spin of electrons is explored to carry information. [1,2] Several techniques have been developed to generate pure spin currents in many materials and structures. [3-10] However, there is still no method available that can be used to directly detect pure spin currents, which carry…
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Extensive efforts are currently being devoted to develo** a new electronic technology, called spintronics, where the spin of electrons is explored to carry information. [1,2] Several techniques have been developed to generate pure spin currents in many materials and structures. [3-10] However, there is still no method available that can be used to directly detect pure spin currents, which carry no net charge current and no net magnetization. Currently, studies of pure spin currents rely on measuring the induced spin accumulation with optical techniques [5, 11-13] or spin-valve configurations. [14-17] However, the spin accumulation does not directly reflect the spatial distribution or temporal dynamics of the pure spin current, and therefore cannot monitor the pure spin current in a real-time and real-space fashion. This imposes severe constraints on research in this field. Here we demonstrate a second-order nonlinear optical effect of the pure spin current. We show that such a nonlinear optical effect, which has never been explored before, can be used for the non-invasive, non-destructive, and real-time imaging of pure spin currents. Since this detection scheme does not rely on optical resonances, it can be generally applied in a wide range of materials with different electronic bandstructures. Furthermore, the control of nonlinear optical properties of materials with pure spin currents may have potential applications in photonics integrated with spintronics.
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Submitted 9 February, 2011;
originally announced February 2011.
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Ambipolar diffusion of photo-excited carriers in bulk GaAs
Authors:
Brian A. Ruzicka,
Lalani K. Werake,
Hassana Samassekou,
Hui Zhao
Abstract:
The ambipolar carrier diffusion in bulk GaAs is studied by using an ultrafast pump-probe technique with a high spatial resolution. Carriers with a point-like spatial profile are excited by a tightly focused pump laser pulse. The spatiotemporal dynamics of the carriers are monitored by a time-delayed and spatially scanned probe pulse. Ambipolar diffusion coefficients are deduced from linear fits to…
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The ambipolar carrier diffusion in bulk GaAs is studied by using an ultrafast pump-probe technique with a high spatial resolution. Carriers with a point-like spatial profile are excited by a tightly focused pump laser pulse. The spatiotemporal dynamics of the carriers are monitored by a time-delayed and spatially scanned probe pulse. Ambipolar diffusion coefficients are deduced from linear fits to the expansion of the area of the profiles, and are found to decrease from about 170~$\mathrm{cm}^2 \mathrm{s}^{-1}$ at 10 K to about 20~$\mathrm{cm}^2 \mathrm{s}^{-1}$ at room temperature. Our results are consistent with those deduced from the previously measured mobilities.
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Submitted 7 February, 2011;
originally announced February 2011.
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Hot carrier diffusion in graphene
Authors:
Brian A. Ruzicka,
Shuai Wang,
Lalani K. Werake,
Ben Weintrub,
Kian ** Loh,
Hui Zhao
Abstract:
We report an optical study of charge transport in graphene. Diffusion of hot carriers in epitaxial graphene and reduced graphene oxide samples are studied using an ultrafast pump-probe technique with a high spatial resolution. Spatiotemporal dynamics of hot carriers after a point-like excitation are monitored. Carrier diffusion coefficients of 11,000 and 5,500 squared centimeters per second are me…
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We report an optical study of charge transport in graphene. Diffusion of hot carriers in epitaxial graphene and reduced graphene oxide samples are studied using an ultrafast pump-probe technique with a high spatial resolution. Spatiotemporal dynamics of hot carriers after a point-like excitation are monitored. Carrier diffusion coefficients of 11,000 and 5,500 squared centimeters per second are measured in epitaxial graphene and reduced graphene oxide samples, respectively, with a carrier temperature on the order of 3,600 K. The demonstrated optical techniques can be used for non-contact and non-invasive in-situ detection of transport properties of graphene.
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Submitted 7 February, 2011; v1 submitted 20 May, 2010;
originally announced May 2010.
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Femtosecond Pump-Probe Studies of Reduced Graphene Oxide Thin Films
Authors:
Brian A. Ruzicka,
Lalani K. Werake,
Hui Zhao,
Shuai Wang,
Kian ** Loh
Abstract:
The dynamics of photocarriers in reduced graphene oxide thin films is studied by using ultrafast pump-probe spectroscopy. Time dependent differential transmissions are measured with sample temperatures ranging from 9 to 300 K. At each sample temperature and probe delay, the sign of differential transmission remains positive. A fast energy relaxation of hot carriers is observed, and is found to be…
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The dynamics of photocarriers in reduced graphene oxide thin films is studied by using ultrafast pump-probe spectroscopy. Time dependent differential transmissions are measured with sample temperatures ranging from 9 to 300 K. At each sample temperature and probe delay, the sign of differential transmission remains positive. A fast energy relaxation of hot carriers is observed, and is found to be independent of sample temperature. Our experiments show that the carrier dynamics in reduced graphene oxide is similar to other types of graphene, and that the differential transmission is caused by phase-state filling of carriers.
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Submitted 10 April, 2010; v1 submitted 9 March, 2010;
originally announced March 2010.
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All-optical generation and detection of sub-picosecond ac spin current pulses in GaAs
Authors:
Brian A. Ruzicka,
Karl Higley,
Lalani K. Werake,
Hui Zhao
Abstract:
Sub-picosecond ac spin current pulses are generated optically in GaAs bulk and quantum wells at room temperature and 90K through quantum interference between one-photon and two-photon absorptions driven by two phase-locked ultrafast laser pulses that are both circularly polarized. The dynamics of the current pulses are detected optically by monitoring in real time and real space nanoscale motion…
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Sub-picosecond ac spin current pulses are generated optically in GaAs bulk and quantum wells at room temperature and 90K through quantum interference between one-photon and two-photon absorptions driven by two phase-locked ultrafast laser pulses that are both circularly polarized. The dynamics of the current pulses are detected optically by monitoring in real time and real space nanoscale motion of electrons with high-resolution pump-probe techniques.
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Submitted 24 June, 2008;
originally announced June 2008.
