Showing 1–33 of 33 results for author: Wendt, J

SUMIE: A Synthetic Benchmark for Incremental Entity Summarization

Authors: Eunjeong Hwang, Yichao Zhou, Beliz Gunel, James Bradley Wendt, Sandeep Tata

Abstract: No existing dataset adequately tests how well language models can incrementally update entity summaries - a crucial ability as these models rapidly advance. The Incremental Entity Summarization (IES) task is vital for maintaining accurate, up-to-date knowledge. To address this, we introduce SUMIE, a fully synthetic dataset designed to expose real-world IES challenges. This dataset effectively high… ▽ More No existing dataset adequately tests how well language models can incrementally update entity summaries - a crucial ability as these models rapidly advance. The Incremental Entity Summarization (IES) task is vital for maintaining accurate, up-to-date knowledge. To address this, we introduce SUMIE, a fully synthetic dataset designed to expose real-world IES challenges. This dataset effectively highlights problems like incorrect entity association and incomplete information presentation. Unlike common synthetic datasets, ours captures the complexity and nuances found in real-world data. We generate informative and diverse attributes, summaries, and unstructured paragraphs in sequence, ensuring high quality. The alignment between generated summaries and paragraphs exceeds 96%, confirming the dataset's quality. Extensive experiments demonstrate the dataset's difficulty - state-of-the-art LLMs struggle to update summaries with an F1 higher than 80.4%. We will open source the benchmark and the evaluation metrics to help the community make progress on IES tasks. △ Less

Submitted 7 June, 2024; originally announced June 2024.

Comments: 24 figures, 4 tables

STRUM-LLM: Attributed and Structured Contrastive Summarization

Authors: Beliz Gunel, James B. Wendt, **g Xie, Yichao Zhou, Nguyen Vo, Zachary Fisher, Sandeep Tata

Abstract: Users often struggle with decision-making between two options (A vs B), as it usually requires time-consuming research across multiple web pages. We propose STRUM-LLM that addresses this challenge by generating attributed, structured, and helpful contrastive summaries that highlight key differences between the two options. STRUM-LLM identifies helpful contrast: the specific attributes along which… ▽ More Users often struggle with decision-making between two options (A vs B), as it usually requires time-consuming research across multiple web pages. We propose STRUM-LLM that addresses this challenge by generating attributed, structured, and helpful contrastive summaries that highlight key differences between the two options. STRUM-LLM identifies helpful contrast: the specific attributes along which the two options differ significantly and which are most likely to influence the user's decision. Our technique is domain-agnostic, and does not require any human-labeled data or fixed attribute list as supervision. STRUM-LLM attributes all extractions back to the input sources along with textual evidence, and it does not have a limit on the length of input sources that it can process. STRUM-LLM Distilled has 100x more throughput than the models with comparable performance while being 10x smaller. In this paper, we provide extensive evaluations for our method and lay out future directions for our currently deployed system. △ Less

Submitted 25 March, 2024; originally announced March 2024.

An Augmentation Strategy for Visually Rich Documents

Authors: **g Xie, James B. Wendt, Yichao Zhou, Seth Ebner, Sandeep Tata

Abstract: Many business workflows require extracting important fields from form-like documents (e.g. bank statements, bills of lading, purchase orders, etc.). Recent techniques for automating this task work well only when trained with large datasets. In this work we propose a novel data augmentation technique to improve performance when training data is scarce, e.g. 10-250 documents. Our technique, which we… ▽ More Many business workflows require extracting important fields from form-like documents (e.g. bank statements, bills of lading, purchase orders, etc.). Recent techniques for automating this task work well only when trained with large datasets. In this work we propose a novel data augmentation technique to improve performance when training data is scarce, e.g. 10-250 documents. Our technique, which we call FieldSwap, works by swap** out the key phrases of a source field with the key phrases of a target field to generate new synthetic examples of the target field for use in training. We demonstrate that this approach can yield 1-7 F1 point improvements in extraction performance. △ Less

Submitted 22 December, 2022; v1 submitted 20 December, 2022; originally announced December 2022.

Comments: 9 pages, 6 figures, 3 tables

Radically Lower Data-Labeling Costs for Visually Rich Document Extraction Models

Authors: Yichao Zhou, James B. Wendt, Navneet Potti, **g Xie, Sandeep Tata

Abstract: A key bottleneck in building automatic extraction models for visually rich documents like invoices is the cost of acquiring the several thousand high-quality labeled documents that are needed to train a model with acceptable accuracy. We propose Selective Labeling to simplify the labeling task to provide "yes/no" labels for candidate extractions predicted by a model trained on partially labeled do… ▽ More A key bottleneck in building automatic extraction models for visually rich documents like invoices is the cost of acquiring the several thousand high-quality labeled documents that are needed to train a model with acceptable accuracy. We propose Selective Labeling to simplify the labeling task to provide "yes/no" labels for candidate extractions predicted by a model trained on partially labeled documents. We combine this with a custom active learning strategy to find the predictions that the model is most uncertain about. We show through experiments on document types drawn from 3 different domains that selective labeling can reduce the cost of acquiring labeled data by $10\times$ with a negligible loss in accuracy. △ Less

Submitted 28 October, 2022; originally announced October 2022.

Comments: 9 pages, 8 figures, 3 tables

Perturbations in epidemiological models: When zombies attack, we can survive!

Authors: Robert F. Allen, Cassandra Jens, Theodore J. Wendt

Abstract: In this paper, we investigate the existence of stability-changing bifurcations in epidemiological models used to study the spread of zombiism through a human population. These bifurcations show that although linear instability of disease-free equilibria may exist in a model, perturbations of model parameters may result in stability. Thus, we show that humans can survive a zombie outbreak. In this paper, we investigate the existence of stability-changing bifurcations in epidemiological models used to study the spread of zombiism through a human population. These bifurcations show that although linear instability of disease-free equilibria may exist in a model, perturbations of model parameters may result in stability. Thus, we show that humans can survive a zombie outbreak. △ Less

Submitted 25 July, 2022; originally announced July 2022.

MSC Class: primary: 92D30; secondary: 92B05

Journal ref: Lett. Biomath. 1.2 (2014), pp. 173-180

Data-Efficient Information Extraction from Form-Like Documents

Authors: Beliz Gunel, Navneet Potti, Sandeep Tata, James B. Wendt, Marc Najork, **g Xie

Abstract: Automating information extraction from form-like documents at scale is a pressing need due to its potential impact on automating business workflows across many industries like financial services, insurance, and healthcare. The key challenge is that form-like documents in these business workflows can be laid out in virtually infinitely many ways; hence, a good solution to this problem should genera… ▽ More Automating information extraction from form-like documents at scale is a pressing need due to its potential impact on automating business workflows across many industries like financial services, insurance, and healthcare. The key challenge is that form-like documents in these business workflows can be laid out in virtually infinitely many ways; hence, a good solution to this problem should generalize to documents with unseen layouts and languages. A solution to this problem requires a holistic understanding of both the textual segments and the visual cues within a document, which is non-trivial. While the natural language processing and computer vision communities are starting to tackle this problem, there has not been much focus on (1) data-efficiency, and (2) ability to generalize across different document types and languages. In this paper, we show that when we have only a small number of labeled documents for training (~50), a straightforward transfer learning approach from a considerably structurally-different larger labeled corpus yields up to a 27 F1 point improvement over simply training on the small corpus in the target domain. We improve on this with a simple multi-domain transfer learning approach, that is currently in production use, and show that this yields up to a further 8 F1 point improvement. We make the case that data efficiency is critical to enable information extraction systems to scale to handle hundreds of different document-types, and learning good representations is critical to accomplishing this. △ Less

Submitted 7 January, 2022; originally announced January 2022.

Comments: Published at the 2nd Document Intelligence Workshop @ KDD 2021 (https://document-intelligence.github.io/DI-2021/)

A Compact Cold-Atom Interferometer with a High Data-Rate Grating Magneto-Optical Trap and a Photonic-Integrated-Circuit-Compatible Laser System

Authors: Jongmin Lee, Roger Ding, Justin Christensen, Randy R. Rosenthal, Aaron Ison, Daniel Paul Gillund, David Bossert, Kyle H. Fuerschbach, William Kindel, Patrick S. Finnegan, Joel R. Wendt, Michael Gehl, Ashok Kodigala, Hayden McGuinness, Charles A. Walker, Shanalyn A. Kemme, Anthony Lentine, Grant Biedermann, Peter D. D. Schwindt

Abstract: The extreme miniaturization of a cold-atom interferometer accelerometer requires the development of novel technologies and architectures for the interferometer subsystems. Here we describe several component technologies and a laser system architecture to enable a path to such miniaturization. We developed a custom, compact titanium vacuum package containing a microfabricated grating chip for a tet… ▽ More The extreme miniaturization of a cold-atom interferometer accelerometer requires the development of novel technologies and architectures for the interferometer subsystems. Here we describe several component technologies and a laser system architecture to enable a path to such miniaturization. We developed a custom, compact titanium vacuum package containing a microfabricated grating chip for a tetrahedral grating magneto-optical trap (GMOT) using a single cooling beam. In addition, we designed a multi-channel photonic-integrated-circuit-compatible laser system implemented with a single seed laser and single sideband modulators in a time-multiplexed manner, reducing the number of optical channels connected to the sensor head. In a compact sensor head containing the vacuum package, sub-Doppler cooling in the GMOT produces 15 uK temperatures, and the GMOT can operate at a 20 Hz data rate. We validated the atomic coherence with Ramsey interferometry using microwave spectroscopy, then demonstrated a light-pulse atom interferometer in a gravimeter configuration for a 10 Hz measurement data rate and T = 0 - 4.5 ms interrogation time, resulting in $Δ$ g / g = 2.0e-6. This work represents a significant step towards deployable cold-atom inertial sensors under large amplitude motional dynamics. △ Less

Submitted 1 September, 2022; v1 submitted 10 July, 2021; originally announced July 2021.

Comments: 21 pages, 10 figures

Journal ref: Nature Communications volume 13, Article number: 5131 (2022)

Single-Shot Readout Performance of Two Heterojunction-Bipolar-Transistor Amplification Circuits at Millikelvin Temperatures

Authors: M. J. Curry, M. Rudolph, T. D. England, A. M. Mounce, R. M. Jock, C. Bureau-Oxton, P. Harvey-Collard, P. A. Sharma, J. M. Anderson, D. M. Campbell, J. R. Wendt, D. R. Ward, S. M. Carr, M. P. Lilly, M. S. Carroll

Abstract: High-fidelity single-shot readout of spin qubits requires distinguishing states much faster than the T1 time of the spin state. One approach to improving readout fidelity and bandwidth (BW) is cryogenic amplification, where the signal from the qubit is amplified before noise sources are introduced and room-temperature amplifiers can operate at lower gain and higher BW. We compare the performance o… ▽ More High-fidelity single-shot readout of spin qubits requires distinguishing states much faster than the T1 time of the spin state. One approach to improving readout fidelity and bandwidth (BW) is cryogenic amplification, where the signal from the qubit is amplified before noise sources are introduced and room-temperature amplifiers can operate at lower gain and higher BW. We compare the performance of two cryogenic amplification circuits: a current-biased heterojunction bipolar transistor circuit (CB-HBT), and an AC-coupled HBT circuit (AC-HBT). Both circuits are mounted on the mixing-chamber stage of a dilution refrigerator and are connected to silicon metal oxide semiconductor (Si-MOS) quantum dot devices on a printed circuit board (PCB). The power dissipated by the CB-HBT ranges from 0.1 to 1 μW whereas the power of the AC-HBT ranges from 1 to 20 μW. Referred to the input, the noise spectral density is low for both circuits, in the 15 to 30 fA/$\sqrt{\textrm{Hz}}$ range. The charge sensitivity for the CB-HBT and AC-HBT is 330 μe/$\sqrt{\textrm{Hz}}$ and 400 μe/$\sqrt{\textrm{Hz}}$, respectively. For the single-shot readout performed, less than 10 μs is required for both circuits to achieve bit error rates below $10^{-3}$, which is a putative threshold for quantum error correction. △ Less

Submitted 14 January, 2019; originally announced January 2019.

Comments: 11 pages, 13 figures

Spin-orbit Interactions for Singlet-Triplet Qubits in Silicon

Authors: Patrick Harvey-Collard, N. Tobias Jacobson, Chloé Bureau-Oxton, Ryan M. Jock, Vanita Srinivasa, Andrew M. Mounce, Daniel R. Ward, John M. Anderson, Ronald P. Manginell, Joel R. Wendt, Tammy Pluym, Michael P. Lilly, Dwight R. Luhman, Michel Pioro-Ladrière, Malcolm S. Carroll

Abstract: Spin-orbit coupling is relatively weak for electrons in bulk silicon, but enhanced interactions are reported in nanostructures such as the quantum dots used for spin qubits. These interactions have been attributed to various dissimilar interface effects, including disorder or broken crystal symmetries. In this Letter, we use a double-quantum-dot qubit to probe these interactions by comparing the s… ▽ More Spin-orbit coupling is relatively weak for electrons in bulk silicon, but enhanced interactions are reported in nanostructures such as the quantum dots used for spin qubits. These interactions have been attributed to various dissimilar interface effects, including disorder or broken crystal symmetries. In this Letter, we use a double-quantum-dot qubit to probe these interactions by comparing the spins of separated singlet-triplet electron pairs. We observe both intravalley and intervalley mechanisms, each dominant for [110] and [100] magnetic field orientations, respectively, that are consistent with a broken crystal symmetry model. We also observe a third spin-flip mechanism caused by tunneling between the quantum dots. This improved understanding is important for qubit uniformity, spin control and decoherence, and two-qubit gates. △ Less

Submitted 11 June, 2019; v1 submitted 22 August, 2018; originally announced August 2018.

Journal ref: Phys. Rev. Lett. 122, 217702 (2019)

All-electrical universal control of a double quantum dot qubit in silicon MOS

Authors: Patrick Harvey-Collard, Ryan M. Jock, N. Tobias Jacobson, Andrew D. Baczewski, Andrew M. Mounce, Matthew J. Curry, Daniel R. Ward, John M. Anderson, Ronald P. Manginell, Joel R. Wendt, Martin Rudolph, Tammy Pluym, Michael P. Lilly, Michel Pioro-Ladrière, Malcolm S. Carroll

Abstract: Qubits based on transistor-like Si MOS nanodevices are promising for quantum computing. In this work, we demonstrate a double quantum dot spin qubit that is all-electrically controlled without the need for any external components, like micromagnets, that could complicate integration. Universal control of the qubit is achieved through spin-orbit-like and exchange interactions. Using single shot rea… ▽ More Qubits based on transistor-like Si MOS nanodevices are promising for quantum computing. In this work, we demonstrate a double quantum dot spin qubit that is all-electrically controlled without the need for any external components, like micromagnets, that could complicate integration. Universal control of the qubit is achieved through spin-orbit-like and exchange interactions. Using single shot readout, we show both DC- and AC-control techniques. The fabrication technology used is completely compatible with CMOS. △ Less

Submitted 6 February, 2018; originally announced February 2018.

Comments: The conference proceedings version incorrectly displays the orientation of the magnetic field in figure 1; this version is correct

Journal ref: in 2017 IEEE International Electron Devices Meeting (IEDM) (2017) pp. 36.5.1-36.5.4

Ion Implantation for Deterministic Single Atom Devices

Authors: J. L. Pacheco, M. Singh, D. L. Perry, J. R. Wendt, G. Ten Eyck, R. P. Manginell, T. Pluym, D. R. Luhman, M. P. Lilly, M. S. Carroll, E. Bielejec

Abstract: We demonstrate a capability of deterministic do** at the single atom level using a combination of direct write focused ion beam and solid-state ion detectors. The focused ion beam system can position a single ion to within 35 nm of a targeted location and the detection system is sensitive to single low energy heavy ions. This platform can be used to deterministically fabricate single atom device… ▽ More We demonstrate a capability of deterministic do** at the single atom level using a combination of direct write focused ion beam and solid-state ion detectors. The focused ion beam system can position a single ion to within 35 nm of a targeted location and the detection system is sensitive to single low energy heavy ions. This platform can be used to deterministically fabricate single atom devices in materials where the nanostructure and ion detectors can be integrated, including donor-based qubits in Si and color centers in diamond. △ Less

Submitted 2 November, 2017; originally announced November 2017.

Probing low noise at the MOS interface with a spin-orbit qubit

Authors: Ryan M. Jock, N. Tobias Jacobson, Patrick Harvey-Collard, Andrew M. Mounce, Vanita Srinivasa, Dan R. Ward, John Anderson, Ron Manginell, Joel R. Wendt, Martin Rudolph, Tammy Pluym, John King Gamble, Andrew D. Baczewski, Wayne M. Witzel, Malcolm S. Carroll

Abstract: The silicon metal-oxide-semiconductor (MOS) material system is technologically important for the implementation of electron spin-based quantum information technologies. Researchers predict the need for an integrated platform in order to implement useful computation, and decades of advancements in silicon microelectronics fabrication lends itself to this challenge. However, fundamental concerns hav… ▽ More The silicon metal-oxide-semiconductor (MOS) material system is technologically important for the implementation of electron spin-based quantum information technologies. Researchers predict the need for an integrated platform in order to implement useful computation, and decades of advancements in silicon microelectronics fabrication lends itself to this challenge. However, fundamental concerns have been raised about the MOS interface (e.g. trap noise, variations in electron g-factor and practical implementation of multi-QDs). Furthermore, two-axis control of silicon qubits has, to date, required the integration of non-ideal components (e.g. microwave strip-lines, micro-magnets, triple quantum dots, or introduction of donor atoms). In this paper, we introduce a spin-orbit (SO) driven singlet-triplet (ST) qubit in silicon, demonstrating all-electrical two-axis control that requires no additional integrated elements and exhibits charge noise properties equivalent to other more model, but less commercially mature, semiconductor systems. We demonstrate the ability to tune an intrinsic spin-orbit interface effect, which is consistent with Rashba and Dresselhaus contributions that are remarkably strong for a low spin-orbit material such as silicon. The qubit maintains the advantages of using isotopically enriched silicon for producing a quiet magnetic environment, measuring spin dephasing times of 1.6 $μ$s using 99.95% $^{28}$Si epitaxy for the qubit, comparable to results from other isotopically enhanced silicon ST qubit systems. This work, therefore, demonstrates that the interface inherently provides properties for two-axis control, and the technologically important MOS interface does not add additional detrimental qubit noise. △ Less

Submitted 13 July, 2017; originally announced July 2017.

Comments: Submitted July 13, 2017. Supplementary information included with the paper

Journal ref: Nature Communications 9, 1768 (2018)

Quantum dots with split enhancement gate tunnel barrier control

Authors: S. Rochette, M. Rudolph, A. -M. Roy, M. Curry, G. Ten Eyck, R. Manginell, J. Wendt, T. Pluym, S. M. Carr, D. Ward, M. P. Lilly, M. S. Carroll, M. Pioro-Ladrière

Abstract: We introduce a silicon metal-oxide-semiconductor quantum dot architecture based on a single polysilicon gate stack. The elementary structure consists of two enhancement gates separated spatially by a gap, one gate forming a reservoir and the other a quantum dot. We demonstrate, in three devices based on two different versions of this elementary structure, that a wide range of tunnel rates is attai… ▽ More We introduce a silicon metal-oxide-semiconductor quantum dot architecture based on a single polysilicon gate stack. The elementary structure consists of two enhancement gates separated spatially by a gap, one gate forming a reservoir and the other a quantum dot. We demonstrate, in three devices based on two different versions of this elementary structure, that a wide range of tunnel rates is attainable while maintaining single-electron occupation. A characteristic change in slope of the charge transitions as a function of the reservoir gate voltage, attributed to screening from charges in the reservoir, is observed in all devices, and is expected to play a role in the sizable tuning orthogonality of the split enhancement gate structure. The all-silicon process is expected to minimize strain gradients from electrode thermal mismatch, while the single gate layer should avoid issues related to overlayers (e.g., additional dielectric charge noise) and help improve yield. Finally, reservoir gate control of the tunnel barrier has implications for initialization, manipulation and readout schemes in multi-quantum dot architectures. △ Less

Submitted 5 March, 2019; v1 submitted 12 July, 2017; originally announced July 2017.

Comments: v1: 11 pages, 3 extended data tables, 1 extended data figure, v2: 5 pages, 3 figures, 5 pages supplementary material, 3 extended data tables, 2 extended data figures. Reorganization of the paper structure, modification of the title, abstract and introduction and conclusion, no change to the results and main text figures

Journal ref: Appl. Phys. Lett. 114, 083101 (2019)

Coupling MOS Quantum Dot and Phosphorus Donor Qubit Systems

Authors: M. Rudolph, P. Harvey-Collard, R. Jock, N. T. Jacobson, J. Wendt, T. Pluym, J. Dominguez, G. Ten-Eyck, R. Manginell, M. P. Lilly, M. S. Carroll

Abstract: Si-MOS based QD qubits are attractive due to their similarity to the current semiconductor industry. We introduce a highly tunable MOS foundry compatible qubit design that couples an electrostatic quantum dot (QD) with an implanted donor. We show for the first time coherent two-axis control of a two-electron spin qubit that evolves under the QD-donor exchange interaction and the hyperfine interact… ▽ More Si-MOS based QD qubits are attractive due to their similarity to the current semiconductor industry. We introduce a highly tunable MOS foundry compatible qubit design that couples an electrostatic quantum dot (QD) with an implanted donor. We show for the first time coherent two-axis control of a two-electron spin qubit that evolves under the QD-donor exchange interaction and the hyperfine interaction with the donor nucleus. The two interactions are tuned electrically with surface gate voltages to provide control of both qubit axes. Qubit decoherence is influenced by charge noise, which is of similar strength as epitaxial systems like GaAs and Si/SiGe. △ Less

Submitted 16 May, 2017; originally announced May 2017.

Journal ref: in 2016 IEEE International Electron Devices Meeting (IEDM) (2016) pp. 34.1.1-34.1.4

Spectroscopy of multi-electrode tunnel barriers

Authors: A. Shirkhorshidian, John King Gamble, L. Maurer, S. M. Carr, J. Dominguez, G. A. Ten Eyck, J. R. Wendt, E. Nielsen, N. T. Jacobson, M. P. Lilly, M. S. Carroll

Abstract: Despite their ubiquity in nanoscale electronic devices, the physics of tunnel barriers has not been developed to the extent necessary for the engineering of devices in the few-electron regime. This problem is of urgent interest, as this is the precise regime into which current, extreme-scale electronics fall. Here, we propose theoretically and validate experimentally a compact model for multi-elec… ▽ More Despite their ubiquity in nanoscale electronic devices, the physics of tunnel barriers has not been developed to the extent necessary for the engineering of devices in the few-electron regime. This problem is of urgent interest, as this is the precise regime into which current, extreme-scale electronics fall. Here, we propose theoretically and validate experimentally a compact model for multi-electrode tunnel barriers, suitable for design-rules-based engineering of tunnel junctions in quantum devices. We perform transport spectroscopy at $T=4$ K, extracting effective barrier heights and widths for a wide range of biases, using an efficient Landauer-Büttiker tunneling model to perform the analysis. We find that the barrier height shows several regimes of voltage dependence, either linear or approximately exponential. The exponential dependence approximately correlates with the formation of an electron channel below an electrode. Effects on transport threshold, such as metal-insulator-transition and lateral confinement are non-negligible and included. We compare these results to semi-classical solutions of Poisson's equation and find them to agree qualitatively. Finally, we characterize the sensitivity of a tunnel barrier that is raised or lowered without an electrode being directly above the barrier region. △ Less

Submitted 4 May, 2017; v1 submitted 2 May, 2017; originally announced May 2017.

Comments: 13 pages, 9 figures; removed comments from TeX source file, paper unchanged

Journal ref: Phys. Rev. Applied 10, 044003 (2018)

High-fidelity single-shot readout for a spin qubit via an enhanced latching mechanism

Authors: Patrick Harvey-Collard, Benjamin D'Anjou, Martin Rudolph, N. Tobias Jacobson, Jason Dominguez, Gregory A. Ten Eyck, Joel R. Wendt, Tammy Pluym, Michael P. Lilly, William A. Coish, Michel Pioro-Ladrière, Malcolm S. Carroll

Abstract: The readout of semiconductor spin qubits based on spin blockade is fast but suffers from a small charge signal. Previous work suggested large benefits from additional charge map** processes, however uncertainties remain about the underlying mechanisms and achievable fidelity. In this work, we study the single-shot fidelity and limiting mechanisms for two variations of an enhanced latching readou… ▽ More The readout of semiconductor spin qubits based on spin blockade is fast but suffers from a small charge signal. Previous work suggested large benefits from additional charge map** processes, however uncertainties remain about the underlying mechanisms and achievable fidelity. In this work, we study the single-shot fidelity and limiting mechanisms for two variations of an enhanced latching readout. We achieve average single-shot readout fidelities > 99.3% and > 99.86% for the conventional and enhanced readout respectively, the latter being the highest to date for spin blockade. The signal amplitude is enhanced to a full one-electron signal while preserving the readout speed. Furthermore, layout constraints are relaxed because the charge sensor signal is no longer dependent on being aligned with the conventional (2, 0) - (1, 1) charge dipole. Silicon donor-quantum-dot qubits are used for this study, for which the dipole insensitivity substantially relaxes donor placement requirements. One of the readout variations also benefits from a parametric lifetime enhancement by replacing the spin-relaxation process with a charge-metastable one. This provides opportunities to further increase the fidelity. The relaxation mechanisms in the different regimes are investigated. This work demonstrates a readout that is fast, has one-electron signal and results in higher fidelity. It further predicts that going beyond 99.9% fidelity in a few microseconds of measurement time is within reach. △ Less

Submitted 31 January, 2018; v1 submitted 7 March, 2017; originally announced March 2017.

Comments: Supplementary information is included with the paper

Journal ref: Phys. Rev. X 8, 021046 (2018)

Fabrication of quantum dots in undoped Si/Si$_{0.8}$Ge$_{0.2}$ heterostructures using a single metal-gate layer

Authors: T. M. Lu, J. K. Gamble, R. P. Muller, E. Nielsen, D. Bethke, G. A. Ten Eyck, T. Pluym, J. R. Wendt, J. Dominguez, M. P. Lilly, M. S. Carroll, M. C. Wanke

Abstract: Enhancement-mode Si/SiGe electron quantum dots have been pursued extensively by many groups for \revEdit{their} potential in quantum computing. Most of the reported dot designs utilize multiple metal-gate layers and use Si/SiGe heterostructures with Ge concentration close to 30\%. Here we report the fabrication and low-temperature characterization of quantum dots in Si/Si$_{0.8}$Ge$_{0.2}$ heteros… ▽ More Enhancement-mode Si/SiGe electron quantum dots have been pursued extensively by many groups for \revEdit{their} potential in quantum computing. Most of the reported dot designs utilize multiple metal-gate layers and use Si/SiGe heterostructures with Ge concentration close to 30\%. Here we report the fabrication and low-temperature characterization of quantum dots in Si/Si$_{0.8}$Ge$_{0.2}$ heterostructures using only one metal-gate layer. We find that the threshold voltage of a channel narrower than 1 $μ$m increases as the width decreases. The higher threshold can be attributed to the combination of quantum confinement and disorder. We also find that the lower Ge ratio used here leads to a narrower operational gate bias range. The higher threshold combined with the limited gate bias range constrains the device design of lithographic quantum dots. We incorporate such considerations in our device design and demonstrate a quantum dot that can be tuned from a single dot to a double dot. The device uses only a single metal-gate layer, greatly simplifying device design and fabrication. △ Less

Submitted 29 August, 2016; originally announced August 2016.

Broken symmetry dielectric resonators for high quality-factor Fano metasurfaces

Authors: Salvatore Campione, Sheng Liu, Lorena I. Basilio, Larry K. Warne, William L. Langston, Ting S. Luk, Joel R. Wendt, John L. Reno, Gordon A. Keeler, Igal Brener, Michael B. Sinclair

Abstract: We present a new approach to dielectric metasurface design that relies on a single resonator per unit cell and produces robust, high quality-factor Fano resonances. Our approach utilizes symmetry breaking of highly symmetric resonator geoemetries, such as cubes, to induce couplings between the otherwise orthogonal resonator modes. In particular, we design perturbations that couple "bright" dipole… ▽ More We present a new approach to dielectric metasurface design that relies on a single resonator per unit cell and produces robust, high quality-factor Fano resonances. Our approach utilizes symmetry breaking of highly symmetric resonator geoemetries, such as cubes, to induce couplings between the otherwise orthogonal resonator modes. In particular, we design perturbations that couple "bright" dipole modes to "dark" dipole modes whose radiative decay is suppressed by local field effects in the array. Our approach is widely scalable from the near-infrared to radio frequencies. We first unravel the Fano resonance behavior through numerical simulations of a germanium resonator-based metasurface that achieved a quality-factor of ~1300 at ~10.8 um. Then, we present two experimental demonstrations operating in the near-infrared (~1 um): a silicon-based implementation that achieved a quality-factor of ~350; and a gallium arsenide-based structure that achieves a quality-factor of ~600 - the highest near-infrared quality-factor experimentally demonstrated to date with this kind of metasurfaces. Importantly, large electromagnetic field enhancements appear within the resonators at the Fano resonant frequencies. We envision that combining high-quality factor, high field enhancement resonances with nonlinear and active/gain materials such as gallium arsenide will lead to new classes of active optical devices. △ Less

Submitted 21 July, 2016; originally announced July 2016.

Benchmarking Adiabatic Quantum Optimization for Complex Network Analysis

Authors: Ojas Parekh, Jeremy Wendt, Luke Shulenburger, Andrew Landahl, Jonathan Moussa, John Aidun

Abstract: We lay the foundation for a benchmarking methodology for assessing current and future quantum computers. We pose and begin addressing fundamental questions about how to fairly compare computational devices at vastly different stages of technological maturity. We critically evaluate and offer our own contributions to current quantum benchmarking efforts, in particular those involving adiabatic quan… ▽ More We lay the foundation for a benchmarking methodology for assessing current and future quantum computers. We pose and begin addressing fundamental questions about how to fairly compare computational devices at vastly different stages of technological maturity. We critically evaluate and offer our own contributions to current quantum benchmarking efforts, in particular those involving adiabatic quantum computation and the Adiabatic Quantum Optimizers produced by D-Wave Systems, Inc. We find that the performance of D-Wave's Adiabatic Quantum Optimizers scales roughly on par with classical approaches for some hard combinatorial optimization problems; however, architectural limitations of D-Wave devices present a significant hurdle in evaluating real-world applications. In addition to identifying and isolating such limitations, we develop algorithmic tools for circumventing these limitations on future D-Wave devices, assuming they continue to grow and mature at an exponential rate for the next several years. △ Less

Submitted 1 April, 2016; originally announced April 2016.

Comments: 117 pages. Originally published June, 2015

Report number: SAND2015-3025

Silicon Quantum Dots with Counted Antimony Donor Implants

Authors: M. Singh, J. L. Pacheco, D. Perry, E. Garratt, G. Ten Eyck, N. C. Bishop, J. R. Wendt, R. P. Manginell, J. Dominguez, T. Pluym, D. R. Luhman, E. Bielejec, M. P. Lilly, M. S. Carroll

Abstract: Deterministic control over the location and number of donors is crucial to donor spin quantum bits (qubits) in semiconductor based quantum computing. In this work, a focused ion beam is used to implant antimony donors close to quantum dots. Ion detectors are integrated next to the quantum dots to sense the implants. The numbers of donors implanted can be counted to a precision of a single ion. In… ▽ More Deterministic control over the location and number of donors is crucial to donor spin quantum bits (qubits) in semiconductor based quantum computing. In this work, a focused ion beam is used to implant antimony donors close to quantum dots. Ion detectors are integrated next to the quantum dots to sense the implants. The numbers of donors implanted can be counted to a precision of a single ion. In low-temperature transport measurements, regular coulomb blockade is observed from the quantum dots. Charge offsets indicative of donor ionization are also observed in devices with counted donor implants. △ Less

Submitted 14 December, 2015; originally announced December 2015.

Coherent coupling between a quantum dot and a donor in silicon

Authors: Patrick Harvey-Collard, N. Tobias Jacobson, Martin Rudolph, Jason Dominguez, Gregory A. Ten Eyck, Joel R. Wendt, Tammy Pluym, John King Gamble, Michael P. Lilly, Michel Pioro-Ladrière, Malcolm S. Carroll

Abstract: Individual donors in silicon chips are used as quantum bits with extremely low error rates. However, physical realizations have been limited to one donor because their atomic size causes fabrication challenges. Quantum dot qubits, in contrast, are highly adjustable using electrical gate voltages. This adjustability could be leveraged to deterministically couple donors to quantum dots in arrays of… ▽ More Individual donors in silicon chips are used as quantum bits with extremely low error rates. However, physical realizations have been limited to one donor because their atomic size causes fabrication challenges. Quantum dot qubits, in contrast, are highly adjustable using electrical gate voltages. This adjustability could be leveraged to deterministically couple donors to quantum dots in arrays of qubits. In this work, we demonstrate the coherent interaction of a $^{31}$P donor electron with the electron of a metal-oxide-semiconductor quantum dot. We form a logical qubit encoded in the spin singlet and triplet states of the two-electron system. We show that the donor nuclear spin drives coherent rotations between the electronic qubit states through the contact hyperfine interaction. This provides every key element for compact two-electron spin qubits requiring only a single dot and no additional magnetic field gradients, as well as a means to interact with the nuclear spin qubit. △ Less

Submitted 18 October, 2017; v1 submitted 4 December, 2015; originally announced December 2015.

Comments: Published version

Journal ref: Nature Communications 8, 1029 (2017)

Cryogenic preamplification of a single-electron-transistor using a silicon-germanium heterojunction-bipolar-transistor

Authors: M. J. Curry, T. D. England, N. C. Bishop, G. Ten-Eyck, J. R. Wendt, T. Pluym, M. P. Lilly, S. M. Carr, M. S. Carroll

Abstract: We examine a silicon-germanium heterojunction bipolar transistor (HBT) for cryogenic pre-amplification of a single electron transistor (SET). The SET current modulates the base current of the HBT directly. The HBT-SET circuit is immersed in liquid helium, and its frequency response from low frequency to several MHz is measured. The current gain and the noise spectrum with the HBT result in a signa… ▽ More We examine a silicon-germanium heterojunction bipolar transistor (HBT) for cryogenic pre-amplification of a single electron transistor (SET). The SET current modulates the base current of the HBT directly. The HBT-SET circuit is immersed in liquid helium, and its frequency response from low frequency to several MHz is measured. The current gain and the noise spectrum with the HBT result in a signal-to-noise-ratio (SNR) that is a factor of 10-100 larger than without the HBT at lower frequencies. The transition frequency defined by SNR = 1 has been extended by as much as a factor of 10 compared to without the HBT amplification. The power dissipated by the HBT cryogenic pre-amplifier is approximately 5 nW to 5 μW for the investigated range of operation. The circuit is also operated in a single electron charge read-out configuration in the time-domain as a proof-of-principle demonstration of the amplification approach for single spin read-out. △ Less

Submitted 28 September, 2015; originally announced September 2015.

Comments: Reprinted with permission from M. J. Curry, et alii. Copyright 2015, AIP Publishing LLC. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the AIP Publishing LLC. 5 pages, 4 figures

Journal ref: App. Phys. Lett. 106, 203505 (2015)

Transport spectroscopy of low disorder silicon tunnel barriers with and without Sb implants

Authors: A. Shirkhorshidian, N. C. Bishop, J. Dominguez, R. K. Grubbs, J. R. Wendt, M. P. Lilly, M. S. Carroll

Abstract: We present transport measurements of silicon MOS split gate structures with and without Sb implants. We observe classical point contact (PC) behavior that is free of any pronounced unintentional resonances at liquid He temperatures. The implanted device has resonances superposed on the point contact transport indicative of transport through the Sb donors. We fit the differential conductance to a r… ▽ More We present transport measurements of silicon MOS split gate structures with and without Sb implants. We observe classical point contact (PC) behavior that is free of any pronounced unintentional resonances at liquid He temperatures. The implanted device has resonances superposed on the point contact transport indicative of transport through the Sb donors. We fit the differential conductance to a rectangular tunnel barrier model with a linear barrier height dependence on source-drain voltage and non-linear dependence on gate bias. Effects such as Fowler-Nordheim (FN) tunneling and image charge barrier lowering (ICBL) are considered. Barrier heights and widths are estimated for the entire range of relevant biases. The barrier heights at the locations of some of the resonances for the implanted tunnel barrier are between 15-20 meV, which are consistent with transport through shallow partially hybridized Sb donors. The dependence of width and barrier height on gate voltage is found to be linear over a wide range of gate bias in the split gate geometry but deviates considerably when the barrier becomes large and is not described completely by standard 1D models such as FN or ICBL effects. △ Less

Submitted 14 January, 2015; originally announced January 2015.

Comments: 9 pages, 3 figures

Spontaneous emission in a silicon charge qubit

Authors: Khoi T. Nguyen, N. Tobias Jacobson, Michael P. Lilly, Nathaniel C. Bishop, Erik Nielsen, Joel R. Wendt, J. Dominguez, T. Pluym, Malcolm S. Carroll

Abstract: The interaction between a qubit and its environment provides a channel for energy relaxation which has an energy-dependent timescale governed by the specific coupling mechanism. We measure the rate of inelastic decay in a Si MOS double quantum dot (DQD) charge qubit through sensing the charge state's response to non-adiabatic driving of its excited state population. The charge distribution is sens… ▽ More The interaction between a qubit and its environment provides a channel for energy relaxation which has an energy-dependent timescale governed by the specific coupling mechanism. We measure the rate of inelastic decay in a Si MOS double quantum dot (DQD) charge qubit through sensing the charge state's response to non-adiabatic driving of its excited state population. The charge distribution is sensed remotely in the weak measurement regime. We extract emission rates down to kHz frequencies by measuring the variation of the non-equilibrium charge occupancy as a function of amplitude and dwell times between non-adiabatic pulses. Our measurement of the energy-dependent relaxation rate provides a fingerprint of the relaxation mechanism, indicating that relaxation rates for this Si MOS DQD are consistent with coupling to deformation acoustic phonons. △ Less

Submitted 14 March, 2014; originally announced March 2014.

Comments: 5 pages, 4 figures, and Supplementary Information

Optical Magnetic Mirrors without Metals

Authors: Sheng Liu, Michael B. Sinclair, Thomas S. Mahony, Young Chul Jun, Salvatore Campione, James Ginn, Daniel A. Bender, Joel R. Wendt, Jon F. Ihlefeld, Paul G. Clem, Jeremy B. Wright, Igal Brener

Abstract: The reflection of an optical wave from a metal, arising from strong interactions between the optical electric field and the free carriers of the metal, is accompanied by a phase reversal of the reflected electric field. A far less common route to achieve high reflectivity exploits strong interactions between the material and the optical magnetic field to produce a magnetic mirror which does not re… ▽ More The reflection of an optical wave from a metal, arising from strong interactions between the optical electric field and the free carriers of the metal, is accompanied by a phase reversal of the reflected electric field. A far less common route to achieve high reflectivity exploits strong interactions between the material and the optical magnetic field to produce a magnetic mirror which does not reverse the phase of the reflected electric field. At optical frequencies, the magnetic properties required for strong interaction can only be achieved through the use of artificially tailored materials. Here we experimentally demonstrate, for the first time, the magnetic mirror behavior of a low-loss, all-dielectric metasurface at infrared optical frequencies through direct measurements of the phase and amplitude of the reflected optical wave. The enhanced absorption and emission of transverse electric dipoles placed very close to magnetic mirrors can lead to exciting new advances in sensors, photodetectors, and light sources. △ Less

Submitted 5 March, 2014; originally announced March 2014.

Atom trap** in a bottle beam created by a diffractive optical element

Authors: V. V. Ivanov, J. A. Isaacs, M. Saffman, S. A. Kemme, A. R. Ellis, G. R. Brady, J. R. Wendt, G. W. Biedermann, S. Samora

Abstract: A diffractive optical element (DOE) has been fabricated for creating blue detuned atomic bottle beam traps. The DOE integrates several diffractive lenses for trap creation and imaging of atomic fluorescence. We characterize the performance of the DOE and demonstrate trap** of cold Cesium atoms inside a bottle beam. A diffractive optical element (DOE) has been fabricated for creating blue detuned atomic bottle beam traps. The DOE integrates several diffractive lenses for trap creation and imaging of atomic fluorescence. We characterize the performance of the DOE and demonstrate trap** of cold Cesium atoms inside a bottle beam. △ Less

Submitted 23 May, 2013; originally announced May 2013.

Comments: 13 figures, submitted to Appl. Phys. B

Infrared Dielectric Resonator Metamaterial

Authors: James C. Ginn, Igal Brener, David W. Peters, Joel R. Wendt, Jeffrey O. Stevens, Paul F. Hines, Lorena I. Basilio, Larry K. Warne, Jon F. Ihlefeld, Paul G. Clem, Michael B. Sinclair

Abstract: We demonstrate, for the first time, an all-dielectric metamaterial resonator in the mid-wave infrared based on high-index tellurium cubic inclusions. Dielectric resonators are desirable compared to conventional metallo-dielectric metamaterials at optical frequencies as they are largely angular invariant, free of ohmic loss, and easily integrated into three-dimensional volumes. With these low-loss,… ▽ More We demonstrate, for the first time, an all-dielectric metamaterial resonator in the mid-wave infrared based on high-index tellurium cubic inclusions. Dielectric resonators are desirable compared to conventional metallo-dielectric metamaterials at optical frequencies as they are largely angular invariant, free of ohmic loss, and easily integrated into three-dimensional volumes. With these low-loss, isotropic elements, disruptive optical metamaterial designs, such as wide-angle lenses and cloaks, can be more easily realized. △ Less

Submitted 24 August, 2011; originally announced August 2011.

Comments: 4 pages, 5 figures

Interaction between Metamaterial Resonators and Inter-subband transitions in Semiconductor Quantum Wells

Authors: Alon Gabbay, John Reno, Joel R. Wendt, Aaron Gin, Michael C. Wanke, Michael B. Sinclair, Eric Shaner, Igal Brener

Abstract: We report on the coupling and interaction between the fundamental resonances of planar metamaterials (split ring resonators) and inter-subband transitions in GaAs/AlGaAs quantum wells structures in the mid-infrared. An incident field polarized parallel to the sample surface is converted by the metamaterial resonators into a field with a finite component polarized normal to the surface, and interac… ▽ More We report on the coupling and interaction between the fundamental resonances of planar metamaterials (split ring resonators) and inter-subband transitions in GaAs/AlGaAs quantum wells structures in the mid-infrared. An incident field polarized parallel to the sample surface is converted by the metamaterial resonators into a field with a finite component polarized normal to the surface, and interacts strongly with the large dipole moment associated with quantum well inter-subband transitions. △ Less

Submitted 17 May, 2011; originally announced May 2011.

Journal ref: Appl. Phys. Lett. 98, 203103 (2011)

Integration of fluorescence collection optics with a microfabricated surface electrode ion trap

Authors: Gregory R. Brady, A. Robert Ellis, David L. Moehring, Daniel Stick, Clark Highstrete, Kevin M. Fortier, Matthew G. Blain, Raymond A. Haltli, Alvaro A. Cruz-Cabrera, Ronald D. Briggs, Joel R. Wendt, Tony R. Carter, Sally Samora, Shanalyn A. Kemme

Abstract: We have successfully demonstrated an integrated optical system for collecting the fluorescence from a trapped ion. The system, consisting of an array of transmissive, dielectric micro-optics and an optical fiber array, has been intimately incorporated into the ion-trap** chip without negatively impacting trap** performance. Epoxies, vacuum feedthrough, and optical component materials were care… ▽ More We have successfully demonstrated an integrated optical system for collecting the fluorescence from a trapped ion. The system, consisting of an array of transmissive, dielectric micro-optics and an optical fiber array, has been intimately incorporated into the ion-trap** chip without negatively impacting trap** performance. Epoxies, vacuum feedthrough, and optical component materials were carefully chosen so that they did not degrade the vacuum environment, and we have demonstrated light detection as well as ion trap** and shuttling behavior comparable to trap** chips without integrated optics, with no modification to the control voltages of the trap** chip. △ Less

Submitted 23 September, 2010; v1 submitted 17 August, 2010; originally announced August 2010.

Comments: 14 pages, 12 figures

Charge sensing in enhancement mode double-top-gated metal-oxide-semiconductor quantum dots

Authors: E. P. Nordberg, H. L. Stalford, R. Young, G. A. Ten Eyck, K. Eng, L. A. Tracy, K. D. Childs, J. R. Wendt, R. K. Grubbs, J. Stevens, M. P. Lilly, M. A. Eriksson, M. S. Carroll

Abstract: Laterally coupled charge sensing of quantum dots is highly desirable, because it enables measurement even when conduction through the quantum dot itself is suppressed. In this work, we demonstrate such charge sensing in a double top gated MOS system. The current through a point contact constriction integrated near a quantum dot shows sharp 2% changes corresponding to charge transitions between t… ▽ More Laterally coupled charge sensing of quantum dots is highly desirable, because it enables measurement even when conduction through the quantum dot itself is suppressed. In this work, we demonstrate such charge sensing in a double top gated MOS system. The current through a point contact constriction integrated near a quantum dot shows sharp 2% changes corresponding to charge transitions between the dot and a nearby lead. We extract the coupling capacitance between the charge sensor and the quantum dot, and we show that it agrees well with a 3D capacitance model of the integrated sensor and quantum dot system. △ Less

Submitted 18 September, 2009; originally announced September 2009.

Comments: 4 Pages, 3 Figures

Journal ref: Appl. Phys. Lett. 95, 202102 (2009)

Enhancement mode double top gated MOS nanostructures with tunable lateral geometry

Authors: E. P. Nordberg, G. A. Ten Eyck, H. L. Stalford, R. P. Muller, R. W. Young, K. Eng, L. A. Tracy, K. D. Childs, J. R. Wendt, R. K. Grubbs, J. Stevens, M. P. Lilly, M. A. Eriksson, M. S. Carroll

Abstract: We present measurements of silicon (Si) metal-oxide-semiconductor (MOS) nanostructures that are fabricated using a process that facilitates essentially arbitrary gate geometries. Stable Coulomb blockade behavior free from the effects of parasitic dot formation is exhibited in several MOS quantum dots with an open lateral quantum dot geometry. Decreases in mobility and increases in charge defect… ▽ More We present measurements of silicon (Si) metal-oxide-semiconductor (MOS) nanostructures that are fabricated using a process that facilitates essentially arbitrary gate geometries. Stable Coulomb blockade behavior free from the effects of parasitic dot formation is exhibited in several MOS quantum dots with an open lateral quantum dot geometry. Decreases in mobility and increases in charge defect densities (i.e. interface traps and fixed oxide charge) are measured for critical process steps, and we correlate low disorder behavior with a quantitative defect density. This work provides quantitative guidance that has not been previously established about defect densities for which Si quantum dots do not exhibit parasitic dot formation. These devices make use of a double-layer gate stack in which many regions, including the critical gate oxide, were fabricated in a fully-qualified CMOS facility. △ Less

Submitted 11 September, 2009; v1 submitted 19 June, 2009; originally announced June 2009.

Comments: 11 pages, 6 figures, 3 tables, accepted for publication in Phys. Rev. B

Journal ref: Phys. Rev. B 80, 115331 (2009)

Giant microwave photoresistance of two-dimensional electron gas

Authors: P. D. Ye, L. W. Engel, D. C. Tsui, J. A. Simmons, J. R. Wendt, G. A. Vawter, J. L. Reno

Abstract: We measure microwave frequency (4-40 GHz) photoresistance at low magnetic field B, in high mobility 2D electron gas samples, excited by signals applied to a transmission line fabricated on the sample surface. Oscillatory photoresistance vs B is observed. For excitation at the cyclotron resonance frequency, we find an unprecedented, giant relative photoresistance (ΔR)/R of up to 250 percent. The… ▽ More We measure microwave frequency (4-40 GHz) photoresistance at low magnetic field B, in high mobility 2D electron gas samples, excited by signals applied to a transmission line fabricated on the sample surface. Oscillatory photoresistance vs B is observed. For excitation at the cyclotron resonance frequency, we find an unprecedented, giant relative photoresistance (ΔR)/R of up to 250 percent. The photoresistance is apparently proportional to the square root of applied power, and disappears as the temperature is increased. △ Less

Submitted 9 June, 2001; originally announced June 2001.

Comments: 4 pages, 3 figures

High Magnetic Field Microwave Conductivity of 2D Electrons in an Array of Antidots

Authors: P. D. Ye, L. W. Engel, D. C. Tsui, J. A. Simmons, J. R. Wendt, G. A. Vawter, J. L. Reno

Abstract: We measure the high magnetic field ($B$) microwave conductivity, Re$σ_{xx}$, of a high mobility 2D electron system containing an antidot array. Re$σ_{xx}$ vs frequency ($f$) increases strongly in the regime of the fractional quantum Hall effect series, with Landau filling $1/3<ν<2/3$. At microwave $f$, Re$σ_{xx}$ vs $B$ exhibits a broad peak centered around $ν=1/2$. On the peak, the 10 GHz Re… ▽ More We measure the high magnetic field ($B$) microwave conductivity, Re$σ_{xx}$, of a high mobility 2D electron system containing an antidot array. Re$σ_{xx}$ vs frequency ($f$) increases strongly in the regime of the fractional quantum Hall effect series, with Landau filling $1/3<ν<2/3$. At microwave $f$, Re$σ_{xx}$ vs $B$ exhibits a broad peak centered around $ν=1/2$. On the peak, the 10 GHz Re$σ_{xx}$ can exceed its dc-limit value by a factor of 5. This enhanced microwave conductivity is unobservable for temperature $T \gtrsim 0.5$ K, and grows more pronounced as $T$ is decreased. The effect may be due to excitations supported by the antidot edges, but different from the well-known edge magnetoplasmons. △ Less

Submitted 6 March, 2001; originally announced March 2001.

Comments: 4 pages, 3 figures, revtex4