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Reproduction of the electronic and magnetic structure of the low symmetry sites of Y$_{2}$SiO$_{5}$ doped with Sm$^{3+}$ via a parameterized crystal-field model
Authors:
N. L. Jobbitt,
J. -P. R. Wells,
M. F. Reid
Abstract:
Parametrized crystal-field analyses are presented for both the six and seven fold coordinated, C$_{1}$ symmetry Sm$^{3+}$ centers in Y$_{2}$SiO$_{5}$, based on extensive spectroscopic data spanning the infrared to optical regions. Laser site-selective excitation and fluorescence spectroscopy as well as Zeeman absorption spectroscopy performed along multiple crystallographic directions has been uti…
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Parametrized crystal-field analyses are presented for both the six and seven fold coordinated, C$_{1}$ symmetry Sm$^{3+}$ centers in Y$_{2}$SiO$_{5}$, based on extensive spectroscopic data spanning the infrared to optical regions. Laser site-selective excitation and fluorescence spectroscopy as well as Zeeman absorption spectroscopy performed along multiple crystallographic directions has been utilised, in addition to previously determined $g$ tensors for the $^{6}$H$_{5/2}$Z$_{1}$ and $^{4}$G$_{5/2}$A$_{1}$ states. The resultant analyses give good approximation to the experimental energy levels and magnetic splittings, yielding crystal-field parameters consistent with the few other lanthanide ions for which such analyses are available.
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Submitted 17 June, 2022;
originally announced June 2022.
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Prediction of the Optical Polarization and High Field Hyperfine Structure Via a Parametrized Crystal-Field Model for the Low Symmetry Centers in Er$^{3+}$ Doped Y$_{2}$SiO$_{5}$
Authors:
N. L. Jobbitt,
J. -P. R. Wells,
M. F. Reid,
S. P. Horvath,
P. Goldner,
A. Ferrier
Abstract:
We report on the development and application of a parametrized crystal-field model for both C$_{1}$ symmetry centers in trivalent erbium-doped Y$_{2}$SiO$_{5}$. High resolution Zeeman and temperature dependent absorption spectroscopy was performed to acquire the necessary experimental data. The obtained data, in addition to the ground ($^{4}$I$_{15/2}$Z$_{1}$) state and exited ($^{4}$I$_{13/2}$Y…
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We report on the development and application of a parametrized crystal-field model for both C$_{1}$ symmetry centers in trivalent erbium-doped Y$_{2}$SiO$_{5}$. High resolution Zeeman and temperature dependent absorption spectroscopy was performed to acquire the necessary experimental data. The obtained data, in addition to the ground ($^{4}$I$_{15/2}$Z$_{1}$) state and exited ($^{4}$I$_{13/2}$Y$_{1}$) state Zeeman and hyperfine structure, was simultaneously fitted in order to refine an existing crystal-field interpretation of the Er$^{3+}$:Y$_{2}$SiO$_{5}$ system. We demonstrate that it is possible to account for the electronic, magnetic and hyperfine structure of the full 4f$^{11}$ configuration of Er$^{3+}$:Y$_{2}$SiO$_{5}$ and further, that it is possible to predict both optical polarization behavior and high magnetic field hyperfine structure of transitions in the 1.5 $μ$m telecommunications band.
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Submitted 17 June, 2022;
originally announced June 2022.
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A Raman heterodyne determination of the magnetic anisotropy for the ground and optically excited states of Y$_{2}$SiO$_{5}$ doped with Sm$^{3+}$
Authors:
N. L. Jobbitt,
J. -P. R. Wells,
M. F. Reid,
J. J. Longdell
Abstract:
We present the full magnetic g tensors of the $^{6}$H$_{5/2}$Z$_{1}$ and $^{4}$G$_{5/2}$A$_{1}$ electronic states for both crystallographic sites in Sm$^{3+}$:Y$_{2}$SiO$_{5}$, deduced through the use of Raman heterodyne spectroscopy performed along 9 different crystallographic directions. The maximum principle g values were determined to be 0.447 (site 1) and 0.523 (site 2) for the ground state a…
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We present the full magnetic g tensors of the $^{6}$H$_{5/2}$Z$_{1}$ and $^{4}$G$_{5/2}$A$_{1}$ electronic states for both crystallographic sites in Sm$^{3+}$:Y$_{2}$SiO$_{5}$, deduced through the use of Raman heterodyne spectroscopy performed along 9 different crystallographic directions. The maximum principle g values were determined to be 0.447 (site 1) and 0.523 (site 2) for the ground state and 2.490 (site 1) and 3.319 (site 2) for the excited state. The determination of these g tensors provide essential spin Hamiltonian parameters that can be utilized in future magnetic and hyperfine studies of Sm$^{3+}$:Y$_{2}$SiO$_{5}$, with applications in quantum information storage and communication devices.
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Submitted 23 April, 2021;
originally announced April 2021.
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Resolution of Discrete Excited States in InGaN Multiple Quantum Wells using Degenerate Four Wave Mixing
Authors:
D. O. Kundys,
J. -P. R. Wells,
A. D. Andreev,
S. A. Hashemizadeh,
T. Wang,
P. J. Parbrook,
A. M. Fox,
D. J. Mowbray,
M. S. Skolnick
Abstract:
We report on two pulse, degenerate four wave mixing (DFWM) measurements on shallow InGaN/GaN multi-quantum wells (MQWs) grown on sapphire substrates. These reveal pulse length limited signal decays. We have found a 10:1 resonant enhancement of the DFWM signal at the excitonic transition frequencies which thereby give a sharp discrimination of the discrete excitonic contributions within the feature…
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We report on two pulse, degenerate four wave mixing (DFWM) measurements on shallow InGaN/GaN multi-quantum wells (MQWs) grown on sapphire substrates. These reveal pulse length limited signal decays. We have found a 10:1 resonant enhancement of the DFWM signal at the excitonic transition frequencies which thereby give a sharp discrimination of the discrete excitonic contributions within the featureless distribution seen in absorption spectra. The exciton resonances have peak positions, which yield good overall agreement with a full k.P model calculation for the quantum well energy levels and optical transition matrix elements. InGaN/GaN MQWs generally exhibit strongly inhomogeneously broadened excitation spectra due to indium fluctuation effects; this approach therefore affords a practical method to extract information on the excited excitonic states not available previously
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Submitted 14 January, 2014;
originally announced January 2014.
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Effective-Hamiltonian parameters for \emph{ab initio} energy-level calculations of SrCl$_{2}$:Yb$^{2+}$ and CsCaBr$_{3}$:Yb$^{2+}$
Authors:
A. J. Salkeld,
M. F. Reid,
J. -P. R. Wells,
G. Sanchez-Sanz,
L. Seijo,
Z. Barandiaran
Abstract:
Calculated energy levels from recent \emph{ab initio} studies of the electronic structure of SrCl$_{2}$:Yb$^{2+}$ and CsCaBr$_{3}$:Yb$^{2+}$ are fitted with a semi-empirical "crystal-field" Hamiltonian, which acts within the model space $4f^{14} + 4f^{13}5d + 4f^{13}6s$. Parameters are obtained for the minima of the potential-energy curves for each energy level and also for a range of anion-cation…
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Calculated energy levels from recent \emph{ab initio} studies of the electronic structure of SrCl$_{2}$:Yb$^{2+}$ and CsCaBr$_{3}$:Yb$^{2+}$ are fitted with a semi-empirical "crystal-field" Hamiltonian, which acts within the model space $4f^{14} + 4f^{13}5d + 4f^{13}6s$. Parameters are obtained for the minima of the potential-energy curves for each energy level and also for a range of anion-cation separations. The parameters are compared with published results parameters fitted to experimental data and to atomic calculations. The states with significant $4f^{13}6s$ character give a good approximation of the impurity-trapped exciton states that appear in the \emph{ab initio} calculations.
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Submitted 31 August, 2013; v1 submitted 23 July, 2013;
originally announced July 2013.
