-
High power density energy harvesting devices based on the anomalous Nernst effect of Co/Pt magnetic multilayers
Authors:
Guillermo Lopez-Polin,
Hugo Aramberri,
Jorge Marques-Marchan,
Benjamin I. Weintrub,
Kirill I. Bolotin,
Jorge I. Cerda,
Agustina Asenjo
Abstract:
The anomalous Nernst effect (ANE) is a thermomagnetic phenomenon with potential applications in thermal energy harvesting. While many recent works studied the approaches to increase the ANE coefficient of materials, relatively little effort was devoted to increasing the power supplied by the effect. Here we demonstrate a nanofabricated device with record power density generated by the ANE. To acco…
▽ More
The anomalous Nernst effect (ANE) is a thermomagnetic phenomenon with potential applications in thermal energy harvesting. While many recent works studied the approaches to increase the ANE coefficient of materials, relatively little effort was devoted to increasing the power supplied by the effect. Here we demonstrate a nanofabricated device with record power density generated by the ANE. To accomplish this, we fabricate micrometer-sized devices in which the thermal gradient is three orders of magnitude higher than conventional macroscopic devices. In addition, we use Co/Pt multilayers, a system characterized by a high ANE thermopower (~1 microV/K), low electrical resistivity, and perpendicular magnetic anisotropy. These innovations allow us to obtain power densities of around 13 W/cm3. We believe that this design may find uses in harvesting wasted energy in e.g. electronic devices.
△ Less
Submitted 19 August, 2022; v1 submitted 15 July, 2022;
originally announced July 2022.
-
Generating extreme electric fields in 2D materials by dual ionic gating
Authors:
Benjamin I. Weintrub,
Yu-Ling Hsieh,
Jan N. Kirchhof,
Kirill I. Bolotin
Abstract:
We demonstrate a new type of dual gate transistor to induce record electric fields through two-dimensional materials (2DMs). At the heart of this device is a 2DM suspended between two volumes of ionic liquid (IL) with independently controlled potentials. The potential difference between the ILs falls across an ultrathin layer consisting of the 2DM and the electrical double layers above and below i…
▽ More
We demonstrate a new type of dual gate transistor to induce record electric fields through two-dimensional materials (2DMs). At the heart of this device is a 2DM suspended between two volumes of ionic liquid (IL) with independently controlled potentials. The potential difference between the ILs falls across an ultrathin layer consisting of the 2DM and the electrical double layers above and below it, thereby producing an intense electric field across the 2DM. We determine the field strength via i) electrical transport measurements and ii) direct measurements of electrochemical potentials of the ILs using semiconducting 2DM, WSe2. The field strength across the material reaches more than 3.5 V/nm, the largest static electric field through any electronic device to date. We demonstrate that this field is strong enough to close the bandgap of trilayer WSe2 driving a semiconductor-to-metal transition. Our approach grants access to previously-inaccessible phenomena occurring in ultrastrong electric fields.
△ Less
Submitted 5 July, 2022; v1 submitted 11 August, 2021;
originally announced August 2021.
-
Controlled dynamic screening of excitonic complexes in 2D semiconductors
Authors:
Andrey R. Klots,
Benjamin Weintrub,
Dhiraj Prasai,
Daniel Kidd,
Kalman Varga,
Kirill A. Velizhanin,
Kirill I. Bolotin
Abstract:
We report a combined theoretical/experimental study of dynamic screening of excitons in media with frequency-dependent dielectric functions. We develop an analytical model showing that interparticle interactions in an exciton are screened in the range of frequencies from zero to the characteristic binding energy depending on the symmetries and transition energies of that exciton. The problem of th…
▽ More
We report a combined theoretical/experimental study of dynamic screening of excitons in media with frequency-dependent dielectric functions. We develop an analytical model showing that interparticle interactions in an exciton are screened in the range of frequencies from zero to the characteristic binding energy depending on the symmetries and transition energies of that exciton. The problem of the dynamic screening is then reduced to simply solving the Schrodinger equation with an effectively frequency-independent potential. Quantitative predictions of the model are experimentally verified using a test system: neutral, charged and defect-bound excitons in two-dimensional monolayer WS2, screened by metallic, liquid, and semiconducting environments. The screening-induced shifts of the excitonic peaks in photoluminescence spectra are in good agreement with our model.
△ Less
Submitted 14 March, 2017;
originally announced March 2017.
-
Hot carrier diffusion in graphene
Authors:
Brian A. Ruzicka,
Shuai Wang,
Lalani K. Werake,
Ben Weintrub,
Kian ** Loh,
Hui Zhao
Abstract:
We report an optical study of charge transport in graphene. Diffusion of hot carriers in epitaxial graphene and reduced graphene oxide samples are studied using an ultrafast pump-probe technique with a high spatial resolution. Spatiotemporal dynamics of hot carriers after a point-like excitation are monitored. Carrier diffusion coefficients of 11,000 and 5,500 squared centimeters per second are me…
▽ More
We report an optical study of charge transport in graphene. Diffusion of hot carriers in epitaxial graphene and reduced graphene oxide samples are studied using an ultrafast pump-probe technique with a high spatial resolution. Spatiotemporal dynamics of hot carriers after a point-like excitation are monitored. Carrier diffusion coefficients of 11,000 and 5,500 squared centimeters per second are measured in epitaxial graphene and reduced graphene oxide samples, respectively, with a carrier temperature on the order of 3,600 K. The demonstrated optical techniques can be used for non-contact and non-invasive in-situ detection of transport properties of graphene.
△ Less
Submitted 7 February, 2011; v1 submitted 20 May, 2010;
originally announced May 2010.
