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Probing the interlayer coupling in 2$H$-NbS$_2$ via soft x-ray angle-resolved photoemission spectroscopy
Authors:
D. Huang,
H. Nakamura,
K. Küster,
U. Wedig,
N. B. M. Schröter,
V. N. Strocov,
U. Starke,
H. Takagi
Abstract:
In the large family of two-dimensional (2D) layered materials including graphene, its honeycomb analogs, and transition-metal dichalcogenides, the interlayer coupling plays a rather intriguing role. On the one hand, the weak van der Waals interaction that holds the layers together endows these compounds with quasi-2D properties, which might imply small interlayer effects on the electronically acti…
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In the large family of two-dimensional (2D) layered materials including graphene, its honeycomb analogs, and transition-metal dichalcogenides, the interlayer coupling plays a rather intriguing role. On the one hand, the weak van der Waals interaction that holds the layers together endows these compounds with quasi-2D properties, which might imply small interlayer effects on the electronically active bands. On the other hand, the oft-witnessed differences in electronic, optical, and magnetic behaviors of monolayers, bilayers, and multilayers of the same compound must have as their microscopic origin the detailed interlayer hop** parameters. Given the few experimental reports that have attempted to explicitly extract these parameters, we employ soft-x-ray angle-resolved photoemission spectroscopy (SX-ARPES) to probe the interlayer coupling in superconducting 2$H$-NbS$_2$. We visualize the S 3$p_z$ bands that disperse with respect to the out-of-plane momentum and introduce a simple tight-binding model to extract the interlayer hop** parameters. From first-principles calculations, we clarify how atomic distances and the proper accounting for screening via hybrid functionals influence these bands. The knowledge of interlayer hop** parameters is particularly pertinent in NbS$_2$, where recent experiments have uncovered fingerprints of finite-momentum superconductivity in the bulk material and heterostructures.
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Submitted 30 June, 2022; v1 submitted 2 March, 2022;
originally announced March 2022.
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Discovery of Superconductivity in (Ba,K)SbO$_{3}$
Authors:
Minu Kim,
Graham M. McNally,
Hun-Ho Kim,
Mohamed Oudah,
Alexandra Gibbs,
Pascal Manuel,
Robert Green,
Tomohiro Takayama,
Alexander Yaresko,
Ulrich Wedig,
Masahiko Isobe,
Reinhard K. Kremer,
D. A. Bonn,
Bernhard Keimer,
Hidenori Takagi
Abstract:
Superconducting bismuthates (Ba,K)BiO$_{3}$ (BKBO) constitute an interesting class of superconductors in that superconductivity with a remarkably high $T_\mathrm{c}$ of 30 K arises in proximity to charge density wave (CDW) order. Prior understanding on the driving mechanism of the CDW and superconductivity emphasizes the role of either bismuth (negative $U$ model) or oxygen ions (ligand hole model…
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Superconducting bismuthates (Ba,K)BiO$_{3}$ (BKBO) constitute an interesting class of superconductors in that superconductivity with a remarkably high $T_\mathrm{c}$ of 30 K arises in proximity to charge density wave (CDW) order. Prior understanding on the driving mechanism of the CDW and superconductivity emphasizes the role of either bismuth (negative $U$ model) or oxygen ions (ligand hole model). While holes in BKBO presumably reside on oxygen owing to their negative charge transfer energy, so far there has been no other comparative material studied. Here, we introduce (Ba,K)SbO$_{3}$ (BKSO) in which the Sb 5$s$ orbital energy is higher than that of the Bi 6$s$ orbitals enabling tuning of the charge transfer energy from negative to slightly positive. The parent compound BaSbO$_{3-δ}$ shows a larger CDW gap compared to the undoped bismuthate BaBiO$_{3}$. As the CDW order is suppressed via potassium substitution up to 65 %, superconductivity emerges, rising up to $T_\mathrm{c}$ = 15 K. This value is lower than the maximum $T_\mathrm{c}$ of BKBO, but higher by more than a factor of two at comparable potassium concentrations. The discovery of an enhanced CDW gap and superconductivity in BKSO indicates that the sign of the charge transfer energy may not be crucial, but instead strong metal-oxygen covalency plays the essential role in constituting a CDW and high-$T_\mathrm{c}$ superconductivity in the main-group perovskite oxides.
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Submitted 14 July, 2021;
originally announced July 2021.
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Spin splitting and strain in epitaxial monolayer WSe$_2$ on graphene
Authors:
H. Nakamura,
A. Mohammed,
P. Rosenzweig,
K. Matsuda,
K. Nowakowski,
K. Küster,
P. Wochner,
S. Ibrahimkutty,
U. Wedig,
H. Hussain,
J. Rawle,
C. Nicklin,
B. Stuhlhofer,
G. Cristiani,
G. Logvenov,
H. Takagi,
U. Starke
Abstract:
We present the electronic and structural properties of monolayer WSe$_{2}$ grown by pulsed-laser deposition on monolayer graphene (MLG) on SiC. The spin splitting in the WSe$_{2}$ valence band at $\overline{\mathrm{K}}$ was $Δ_\mathrm{SO}=0.469\pm0.008$ eV by angle-resolved photoemission spectroscopy (ARPES). Synchrotron-based grazing-incidence in-plane X-ray diffraction (XRD) revealed the in-plan…
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We present the electronic and structural properties of monolayer WSe$_{2}$ grown by pulsed-laser deposition on monolayer graphene (MLG) on SiC. The spin splitting in the WSe$_{2}$ valence band at $\overline{\mathrm{K}}$ was $Δ_\mathrm{SO}=0.469\pm0.008$ eV by angle-resolved photoemission spectroscopy (ARPES). Synchrotron-based grazing-incidence in-plane X-ray diffraction (XRD) revealed the in-plane lattice constant of monolayer WSe$_{2}$ to be $a_\mathrm{WSe_2}=3.2757\pm0.0008 \mathrm{Å}$. This indicates a lattice compression of -0.19 % from bulk WSe$_{2}$. By using experimentally determined graphene lattice constant ($a_\mathrm{MLG}=2.4575\pm0.0007 \mathrm{Å}$), we found that a 3$\times$3 unit cell of the slightly compressed WSe$_{2}$ is perfectly commensurate with a 4$\times$4 graphene lattice with a mismatch below 0.03 %, which could explain why the monolayer WSe$_{2}$ is compressed on MLG. From XRD and first-principles calculations, however, we conclude that the observed size of strain is negligibly small to account for a discrepancy in $Δ_\mathrm{SO}$ found between exfoliated and epitaxial monolayers in earlier ARPES. In addition, angle-resolved, ultraviolet and X-ray photoelectron spectroscopy shed light on the band alignment between WSe$_{2}$ and MLG/SiC and indicate electron transfer from graphene to the WSe$_{2}$ monolayer. As further revealed by atomic force microscopy, the WSe$_{2}$ island size depends on the number of carbon layers on top of the SiC substrate. This suggests that the epitaxy of WSe$_{2}$ favors the weak van der Waals interactions with graphene while it is perturbed by the influence of the SiC substrate and its carbon buffer layer.
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Submitted 10 December, 2019;
originally announced December 2019.
