Showing 1–17 of 17 results for author: Wasserman, D

Metastability of stratified magnetohydrostatic equilibria and their relaxation

Authors: David N. Hosking, David Wasserman, Steven C. Cowley

Abstract: Motivated by explosive releases of energy in fusion, space and astrophysical plasmas, we consider the nonlinear stability of stratified magnetohydrodynamic (MHD) equilibria against interchanges of straight magnetic-flux tubes. We demonstrate that in MHD (unlike in hydrodynamics) linear stability does not guarantee nonlinear stability, even in this simple case. We show that the minimum-energy confi… ▽ More Motivated by explosive releases of energy in fusion, space and astrophysical plasmas, we consider the nonlinear stability of stratified magnetohydrodynamic (MHD) equilibria against interchanges of straight magnetic-flux tubes. We demonstrate that in MHD (unlike in hydrodynamics) linear stability does not guarantee nonlinear stability, even in this simple case. We show that the minimum-energy configurations attainable by metastable equilibria under non-diffusive 2D dynamics can be determined by solving a combinatorial optimization problem. These minimum-energy states are, to good approximation, the final states reached by simulations of destabilized metastable equilibria where turbulent mixing is suppressed by viscosity. For the case of fully turbulent relaxation, we construct a statistical mechanical theory based on the maximization of Boltzmann's mixing entropy. This theory is analogous to the Lynden-Bell statistical mechanics of stellar systems and collisionless plasmas and to the Robert-Sommeria-Miller (RSM) theory of 2D vortex turbulence. Our theory reproduces well the results of our numerical simulations for sufficiently large perturbations to the metastable equilibrium. △ Less

Submitted 26 April, 2024; v1 submitted 2 January, 2024; originally announced January 2024.

Comments: 40 pages, 36 figures

Perfect Absorption at the Ultimate Thickness Limit in Planar Films

Authors: Zarko Sakotic, Alexander Ware, Michelle Povinelli, Daniel Wasserman

Abstract: Reducing device volume is one of the key requirements for advanced nanophotonic technologies, however this demand is often at odds with designing highly absorbing elements which usually require sizeable thicknesses, such as for detector and sensor applications. Here we theoretically explore the thickness limitations of perfectly absorbing resonant systems and show surprisingly low bounds on minima… ▽ More Reducing device volume is one of the key requirements for advanced nanophotonic technologies, however this demand is often at odds with designing highly absorbing elements which usually require sizeable thicknesses, such as for detector and sensor applications. Here we theoretically explore the thickness limitations of perfectly absorbing resonant systems and show surprisingly low bounds on minimal required thicknesses for total light absorption in thin planar films. We present a framework for understanding, predicting, and engineering topologically protected perfect absorption in a wide range of resonantly absorbing materials. The proposed analytical approach leads to a simple relation between a perfect absorbers thickness and dielectric function loss, which also serves as a guide for determining the absorption potential of existing and emerging materials at the ultimate thickness limit. The presented results offer new insights into the extremes of light-matter interaction and can facilitate the design of ultra-sensitive light absorbers for detector and sensor systems. △ Less

Submitted 4 October, 2023; originally announced October 2023.

Face0: Instantaneously Conditioning a Text-to-Image Model on a Face

Authors: Dani Valevski, Danny Wasserman, Yossi Matias, Yaniv Leviathan

Abstract: We present Face0, a novel way to instantaneously condition a text-to-image generation model on a face, in sample time, without any optimization procedures such as fine-tuning or inversions. We augment a dataset of annotated images with embeddings of the included faces and train an image generation model, on the augmented dataset. Once trained, our system is practically identical at inference time… ▽ More We present Face0, a novel way to instantaneously condition a text-to-image generation model on a face, in sample time, without any optimization procedures such as fine-tuning or inversions. We augment a dataset of annotated images with embeddings of the included faces and train an image generation model, on the augmented dataset. Once trained, our system is practically identical at inference time to the underlying base model, and is therefore able to generate images, given a user-supplied face image and a prompt, in just a couple of seconds. Our method achieves pleasing results, is remarkably simple, extremely fast, and equips the underlying model with new capabilities, like controlling the generated images both via text or via direct manipulation of the input face embeddings. In addition, when using a fixed random vector instead of a face embedding from a user supplied image, our method essentially solves the problem of consistent character generation across images. Finally, while requiring further research, we hope that our method, which decouples the model's textual biases from its biases on faces, might be a step towards some mitigation of biases in future text-to-image models. △ Less

Submitted 11 June, 2023; originally announced June 2023.

High operating temperature plasmonic infrared detectors

Authors: L. Nordin, A. J. Muhowski, D. Wasserman

Abstract: III-V semiconductor type-II superlattices (T2SLs) are a promising material system with the potential to significantly reduce the dark current of, and thus realize high-performance in, infrared photodetectors at elevated temperatures. However, T2SLs have struggled to meet the performance metrics set by the longstanding infrared detector material of choice, HgCdTe. Recently, epitaxial plasmonic dete… ▽ More III-V semiconductor type-II superlattices (T2SLs) are a promising material system with the potential to significantly reduce the dark current of, and thus realize high-performance in, infrared photodetectors at elevated temperatures. However, T2SLs have struggled to meet the performance metrics set by the longstanding infrared detector material of choice, HgCdTe. Recently, epitaxial plasmonic detector architectures have demonstrated T2SL detector performance comparable to HgCdTe in the 77 K - 195 K temperature range. Here we demonstrate a high operating temperature plasmonic T2SL detector architecture with high-performance operation at temperatures accessible with two-stage thermoelectric coolers. Specifically, we demonstrate long-wave infrared plasmonic detectors operating at temperatures as high as 230 K while maintaining dark currents below the "Rule 07" heuristic. At a detector operating temperature of 230 K, we realize 22.8% external quantum efficiency in a detector absorber only 372 nm thick ($\simλ_0 /25$) with peak specific detectivity of $2.29x10^{9}$ cm Hz$^{1/2}$ W$^{-1}$ at 9.6 $μ$m, well above commercial detectors at the same operating temperature. △ Less

Submitted 12 January, 2022; originally announced January 2022.

Comments: The following article has been submitted to Applied Physics Letters. After it is published, it will be found at https://aip.scitation.org/journal/apl

Low-threshold InP quantum dot and InGaP quantum well visible lasers on silicon (001)

Authors: Pankul Dhingra, Patrick Su, Brian D. Li, Ryan D. Hool, Aaron J. Muhowski, Mijung Kim, Daniel Wasserman, John Dallesasse, Minjoo Larry Lee

Abstract: Monolithically combining silicon nitride (SiNx) photonics technology with III-V active devices could open a broad range of on-chip applications spanning a wide wavelength range of ~400-4000 nm. With the development of nitride, arsenide, and antimonide lasers based on quantum well (QW) and quantum dot (QD) active regions, the wavelength palette of integrated III-V lasers on Si currently spans from… ▽ More Monolithically combining silicon nitride (SiNx) photonics technology with III-V active devices could open a broad range of on-chip applications spanning a wide wavelength range of ~400-4000 nm. With the development of nitride, arsenide, and antimonide lasers based on quantum well (QW) and quantum dot (QD) active regions, the wavelength palette of integrated III-V lasers on Si currently spans from 400 nm to 11 μm with a crucial gap in the red-wavelength regime of 630-750 nm. Here, we demonstrate the first red InGaP QW and far-red InP QD lasers monolithically grown on CMOS compatible Si (001) substrates with continuous-wave operation at room temperature. A low-threshold current density of 550 A/cm2 and 690 A/cm2 with emission at 680-730 nm was achieved for QW and QD lasers on Si, respectively. This work takes the first vital step towards integration of visible red lasers on Si allowing the utilization of integrated photonics for applications including biophotonic sensing, quantum computing, and near-eye displays. △ Less

Submitted 25 September, 2021; originally announced September 2021.

Comments: Journal article, 6 pages, 5 figures

Bright mid-infrared photoluminescence from high dislocation density epitaxial PbSe films on GaAs

Authors: Jarod Meyer, Aaron J. Muhowski, Leland J. Nordin, Eamonn T. Hughes, Brian B. Haidet, Daniel Wasserman, Kunal Mukherjee

Abstract: We report on photoluminescence in the 3-7 $μ$m mid-wave infrared (MWIR) range from sub-100 nm strained thin films of rocksalt PbSe(001) grown on GaAs(001) substrates by molecular beam epitaxy. These bare films, grown epitaxially at temperatures below 400 °C, luminesce brightly at room temperature and have minority carrier lifetimes as long as 172 ns. The relatively long lifetimes in PbSe thin film… ▽ More We report on photoluminescence in the 3-7 $μ$m mid-wave infrared (MWIR) range from sub-100 nm strained thin films of rocksalt PbSe(001) grown on GaAs(001) substrates by molecular beam epitaxy. These bare films, grown epitaxially at temperatures below 400 °C, luminesce brightly at room temperature and have minority carrier lifetimes as long as 172 ns. The relatively long lifetimes in PbSe thin films are achievable despite threading dislocation densities exceeding $10^9$ $cm^{-2}$ arising from island growth on the nearly 8% lattice- and crystal-structure-mismatched GaAs substrate. Using quasi-continuous-wave and time-resolved photoluminescence, we show Shockley-Read-Hall recombination is slow in our high dislocation density PbSe films at room temperature, a hallmark of defect tolerance. Power-dependent photoluminescence and high injection excess carrier lifetimes at room temperature suggest that degenerate Auger recombination limits the efficiency of our films, though the Auger recombination rates are significantly lower than equivalent, III-V bulk materials and even a bit slower than expectations for bulk PbSe. Consequently, the combined effects of defect tolerance and low Auger recombination rates yield an estimated peak internal quantum efficiency of roughly 30% at room temperature, unparalleled in the MWIR for a severely lattice-mismatched thin film. We anticipate substantial opportunities for improving performance by optimizing crystal growth as well as understanding Auger processes in thin films. These results highlight the unique opportunity to harness the unusual chemical bonding in PbSe and related IV-VI semiconductors for heterogeneously integrated mid-infrared light sources constrained by tight thermal budgets in new device designs. △ Less

Submitted 28 August, 2021; originally announced August 2021.

Comments: 24 pages, 6 figures

Journal ref: APL Materials 9, 111112 (2021)

Ultra-Thin All-Epitaxial Plasmonic Detectors

Authors: Leland Nordin, Priyanka Petluru, Abhilasha Kamboj, Aaron J. Muhowski, Daniel Wasserman

Abstract: We present an infrared photodetector leveraging an all-epitaxial device architecture consisting of a 'designer' plasmonic metal integrated with a quantum-engineered detector structure, all in a mature III-V semiconductor material system. Incident light is coupled into surface plasmon-polariton modes at the detector/'designer' metal interface, and the strong confinement of these modes allows for a… ▽ More We present an infrared photodetector leveraging an all-epitaxial device architecture consisting of a 'designer' plasmonic metal integrated with a quantum-engineered detector structure, all in a mature III-V semiconductor material system. Incident light is coupled into surface plasmon-polariton modes at the detector/'designer' metal interface, and the strong confinement of these modes allows for a sub-diffractive ($\sim λ_0 / 33$) detector absorber layer thickness, effectively decoupling the detector's absorption efficiency and dark current. We demonstrate high-performance detectors operating at non-cryogenic temperatures (T = 195 K), without sacrificing external quantum efficiency, and superior to well established and commercially-available detectors. This work provides a practical and scalable plasmonic optoelectronic device architecture with real world mid-infrared applications. △ Less

Submitted 14 October, 2021; v1 submitted 8 July, 2021; originally announced July 2021.

Enhanced Room Temperature Infrared LEDs using Monolithically Integrated Plasmonic Materials

Authors: Andrew F. Briggs, Leland Nordin, Aaron J. Muhowski, Evan Simmons, Pankul Dhingra, Minjoo L. Lee, Viktor A. Podolskiy, Daniel Wasserman, Seth R. Bank

Abstract: Remarkable systems have been reported recently using the polylithic integration of semiconductor optoelectronic devices and plasmonic materials exhibiting epsilon-near-zero (ENZ) and negative permittivity. In traditional noble metals, the ENZ and plasmonic response is achieved near their plasma frequencies, limiting plasmonic optoelectronic device design flexibility. Here, we leverage an all-epita… ▽ More Remarkable systems have been reported recently using the polylithic integration of semiconductor optoelectronic devices and plasmonic materials exhibiting epsilon-near-zero (ENZ) and negative permittivity. In traditional noble metals, the ENZ and plasmonic response is achieved near their plasma frequencies, limiting plasmonic optoelectronic device design flexibility. Here, we leverage an all-epitaxial approach to monolithically and seamlessly integrate designer plasmonic materials into a quantum dot light emitting diode (LED), leading to a ~5.6 x enhancement over an otherwise identical non-plasmonic control sample. Devices exhibited optical powers comparable, and temperature performance far superior, to commercially-available devices. △ Less

Submitted 25 August, 2020; v1 submitted 6 May, 2020; originally announced May 2020.

Comments: Journal letter, four pages, five figures

Ballistic Metamaterials

Authors: Kun Li, Evan Simmons, A. F. Briggs, S. R. Bank, Daniel Wasserman, Viktor A. Podolskiy, Evgenii E. Narimanov

Abstract: The interaction of free electrons with electromagnetic excitation is the fundamental mechanism responsible for ultra-strong confinement of light that, in turn, enables biosensing, near-field microscopy, optical cloaking, sub-wavelength focusing, and super-resolution imaging. These unique phenomena and functionalities critically rely on the negative permittivity of optical elements resulting from t… ▽ More The interaction of free electrons with electromagnetic excitation is the fundamental mechanism responsible for ultra-strong confinement of light that, in turn, enables biosensing, near-field microscopy, optical cloaking, sub-wavelength focusing, and super-resolution imaging. These unique phenomena and functionalities critically rely on the negative permittivity of optical elements resulting from the free electrons. As result, progress in nanophotonics and nano-optics is often related to the development of new negative permittivity (plasmonic) media at the optical frequency of interest. Here we show that the essential mobility of free charge carriers in such conducting media dramatically alters the well-known optical response of free electron gases. We demonstrate that a ballistic resonance associated with the interplay of the time-periodic motion of the free electrons in the confines of a sub-wavelength scale nanostructure and the time periodic electromagnetic field leads to a dramatic enhancement of the electric polarization of the medium - to the point where a plasmonic response can be achieved in a composite material using only positive bulk permittivity components. This ballistic resonance opens the fields of plasmonics, nanophotonics, and metamaterials to many new constituent materials that until now were considered unsuitable for such applications, and extends the operational frequency range of existing materials to substantially shorter wavelengths. As a proof of concept, we experimentally demonstrate that ballistic resonance in all-semiconductor metamaterials results in strongly anisotropic (hyperbolic) response well above the plasma frequencies of the metamaterial components. △ Less

Submitted 19 December, 2019; originally announced December 2019.

Enhanced Emission from Ultra-Thin Long Wavelength Infrared Superlattices on Epitaxial Plasmonic Materials

Authors: L. Nordin, K. Li, A. Briggs, E. Simmons, S. Bank, V. A. Podolskiy, D. Wasserman

Abstract: Molecular beam epitaxy allows for the monolithic integration of wavelength-flexible epitaxial infrared plasmonic materials with quantum-engineered infrared optoelectronic active regions. We experimentally demonstrate a six-fold enhancement in photoluminescence from ultra-thin (total thickness of 1/32-th wavelength) long wavelength infrared (LWIR) superlattices grown on highly doped semiconductor d… ▽ More Molecular beam epitaxy allows for the monolithic integration of wavelength-flexible epitaxial infrared plasmonic materials with quantum-engineered infrared optoelectronic active regions. We experimentally demonstrate a six-fold enhancement in photoluminescence from ultra-thin (total thickness of 1/32-th wavelength) long wavelength infrared (LWIR) superlattices grown on highly doped semiconductor designer metal virtual substrates when compared to the same superlattice grown on an undoped virtual substrate. Analytical and numerical models of the emission process via a Dyadic Greens function formalism are in agreement with experimental results and relate the observed enhancement of emission to a combination of Purcell enhancement due to surface plasmon modes as well as directionality enhancement due to cavity-substrate-emitter interaction. The results presented provide a potential path towards efficient, ultra-subwavelength LWIR emitter devices, as well as a monolithic epitaxial architecture offering the opportunity to investigate the ultimate limits of light-matter interaction in coupled plasmonic/optoelectronic materials. △ Less

Submitted 24 October, 2019; originally announced October 2019.

BER Performance of Polar Coded OFDM in Multipath Fading

Authors: David R. Wasserman, Ahsen U. Ahmed, David W. Chi

Abstract: Orthogonal Frequency Division Multiplexing (OFDM) has gained a lot of popularity over the years. Due to its popularity, OFDM has been adopted as a standard in cellular technology and Wireless Local Area Network (WLAN) communication systems. To improve the bit error rate (BER) performance, forward error correction (FEC) codes are often utilized to protect signals against unknown interference and ch… ▽ More Orthogonal Frequency Division Multiplexing (OFDM) has gained a lot of popularity over the years. Due to its popularity, OFDM has been adopted as a standard in cellular technology and Wireless Local Area Network (WLAN) communication systems. To improve the bit error rate (BER) performance, forward error correction (FEC) codes are often utilized to protect signals against unknown interference and channel degradations. In this paper, we apply soft-decision FEC, more specifically polar codes and a convolutional code, to an OFDM system in a quasi-static multipath fading channel, and compare BER performance in various channels. We investigate the effect of interleaving bits within a polar codeword. Finally, the simulation results for each case are presented in the paper. △ Less

Submitted 30 September, 2016; originally announced October 2016.

Comments: 6 pages, 4 figures. Submitted to IEEE WCNC '17

Epsilon-Near-Zero Photonics Wires for Mid-Infrared Optical Lumped Circuitry

Authors: Runyu Liu, Chrisotpher Roberts, Yujun Zhong, Viktor Podolskiy, Daniel Wasserman

Abstract: There has been recent interest in the development of optical analogues of lumped element circuitry, where optical elements act as effective optical inductors, capacitors, and resistors. Such optical circuitry requires the photonic equivalent of electrical wires, structures able carry optical frequency signals to and from the lumped circuit elements while simultaneously maintaining signal carrier w… ▽ More There has been recent interest in the development of optical analogues of lumped element circuitry, where optical elements act as effective optical inductors, capacitors, and resistors. Such optical circuitry requires the photonic equivalent of electrical wires, structures able carry optical frequency signals to and from the lumped circuit elements while simultaneously maintaining signal carrier wavelengths much larger than the size of the lumped elements. Here we demonstrate the design, fabrication, and characterization of hybrid metal/doped-semiconductor 'photonic wires' operating at optical frequencies with effective indices of propagation near-zero. Our samples are characterized by polarization and angle-dependent FTIR spectroscopy and modeled by finite element methods and rigorous coupled wave analysis. We demonstrate coupling to such photonic wires from free space, and show the effective wavelength of the excited mode to be approximately an order of magnitude larger than the free-space wavelength of our light. The operational length of the photonic wires approaches twice the free space wavelength, significantly longer than what is achievable with bulk epsilon near zero materials. The novel architecture utilized in our hybrid waveguides allows for significant design flexibility by control of the semiconductor material's optical properties and the sample geometry. In addition, by utilizing a semiconductor-based architecture, our photonic wires can be designed to monolithically integrate the optical equivalents of capacitive, inductive, and resistive lumped circuit elements, as well optoelectronic sources and detectors. As such, the demonstrated photonic wires have the potential to provide a key component, and a realistic framework, for the development of optical circuitry. △ Less

Submitted 15 April, 2016; originally announced April 2016.

Comments: 24 pages, 7 figures

Strong absorption and selective thermal emission from a mid-infrared metamaterial

Authors: J. A. Mason, S. Smith, D. Wasserman

Abstract: We demonstrate thin-film metamaterials with resonances in the mid-infrared wavelength range. Our structures are numerically modeled and experimentally characterized by reflection and angularly-resolved thermal emission spectroscopy. We demonstrate strong and controllable absorption resonances across the mid-infrared wavelength range. In addition, the polarized thermal emission from these samples i… ▽ More We demonstrate thin-film metamaterials with resonances in the mid-infrared wavelength range. Our structures are numerically modeled and experimentally characterized by reflection and angularly-resolved thermal emission spectroscopy. We demonstrate strong and controllable absorption resonances across the mid-infrared wavelength range. In addition, the polarized thermal emission from these samples is shown to be highly selective and largely independent of emission angles from normal to 45 degrees. Experimental results are compared to numerical models with excellent agreement. Such structures hold promise for large-area, low-cost metamaterial coatings for control of gray- or black-body thermal signatures, as well as for possible mid-IR sensing applications. △ Less

Submitted 14 April, 2011; originally announced April 2011.

Comments: The following article has been submitted to Appl. Phys. Lett. After it is published, it will be found at http://apl.aip.org/. 14 pages including 4 figure pages

Journal ref: Appl. Phys. Lett., 98 (2011) 241105

Funneling Light Through a Subwavelength Aperture with Epsilon-Near-Zero Materials

Authors: David Slocum, Sandeep Inampudi, David C. Adams, Shivashankar Vangala, Nicholas A. Kuhta, William D. Goodhue, Viktor A. Podolskiy, Daniel Wasserman

Abstract: Integration of the next generation of photonic structures with electronic and optical on-chip components requires the development of effective methods for confining and controlling light in subwavelength volumes. Several techniques enabling light coupling to sub-wavelength objects have recently been proposed, including grating-, and composite-based solutions. However, experi-mental realization of… ▽ More Integration of the next generation of photonic structures with electronic and optical on-chip components requires the development of effective methods for confining and controlling light in subwavelength volumes. Several techniques enabling light coupling to sub-wavelength objects have recently been proposed, including grating-, and composite-based solutions. However, experi-mental realization of these couplers involves complex fabrication with \sim 10nm resolution in three dimensions. One promising alternative to complex coupling structures involves materials with vanishingly small dielectric permittivity, also known as epsilon-near-zero (ENZ) materials. In contrast to the previously referenced approaches, a single at layer of ENZ-material is expected to provide effcient coupling between free-space radiation and sub-wavelength guiding structures. Here we report the first direct observation of bulk-ENZ-enhanced transmission through a subwavelength slit, accompanied by a theoretical study of this phenomenon. Our study opens the door to multiple practical applications of ENZ materials and ENZ-based photonic systems. △ Less

Submitted 30 March, 2011; originally announced March 2011.

Journal ref: Phys. Rev. Lett. 107 133901 (2011)

Anomalous Spin Polarization of GaAs Two-Dimensional Hole Systems

Authors: R. Winkler, E. Tutuc, S. J. Papadakis, S. Melinte, M. Shayegan, D. Wasserman, S. A. Lyon

Abstract: We report measurements and calculations of the spin-subband depopulation, induced by a parallel magnetic field, of dilute GaAs two-dimensional (2D) hole systems. The results reveal that the shape of the confining potential dramatically affects the values of in-plane magnetic field at which the upper spin subband is depopulated. Most surprisingly, unlike 2D electron systems, the carrier-carrier i… ▽ More We report measurements and calculations of the spin-subband depopulation, induced by a parallel magnetic field, of dilute GaAs two-dimensional (2D) hole systems. The results reveal that the shape of the confining potential dramatically affects the values of in-plane magnetic field at which the upper spin subband is depopulated. Most surprisingly, unlike 2D electron systems, the carrier-carrier interaction in 2D hole systems does not significantly enhance the spin susceptibility. We interpret our findings using a multipole expansion of the spin density matrix, and suggest that the suppression of the enhancement is related to the holes' band structure and effective spin j=3/2. △ Less

Submitted 20 June, 2005; v1 submitted 23 February, 2005; originally announced February 2005.

Comments: 6 pages, 4 figures, substantially extended discussion of results

Journal ref: Phys. Rev. B 72, 195321 (2005)

Negative differential Rashba effect in two-dimensional hole systems

Authors: B. Habib, E. Tutuc, S. Melinte, M. Shayegan, D. Wasserman, S. A. Lyon, R. Winkler

Abstract: We demonstrate experimentally and theoretically that two-dimensional (2D) heavy hole systems in single heterostructures exhibit a \emph{decrease} in spin-orbit interaction-induced spin splitting with an increase in perpendicular electric field. Using front and back gates, we measure the spin splitting as a function of applied electric field while kee** the density constant. Our results are in… ▽ More We demonstrate experimentally and theoretically that two-dimensional (2D) heavy hole systems in single heterostructures exhibit a \emph{decrease} in spin-orbit interaction-induced spin splitting with an increase in perpendicular electric field. Using front and back gates, we measure the spin splitting as a function of applied electric field while kee** the density constant. Our results are in contrast to the more familiar case of 2D electrons where spin splitting increases with electric field. △ Less

Submitted 14 September, 2004; originally announced September 2004.

Comments: 3 pages, 3 figures. To appear in APL

Spin Splitting in GaAs (100) Two-Dimensional Holes

Authors: B. Habib, E. Tutuc, S. Melinte, M. Shayegan, D. Wasserman, S. A. Lyon, R. Winkler

Abstract: We measured Shubnikov-de Haas (SdH) oscillations in GaAs (100) two-dimensional holes to determine the inversion asymmetry-induced spin splitting. The Fourier spectrum of the SdH oscillations contains two peaks, at frequencies $f_-$ and $f_+$, that correspond to the hole densities of the two spin subbands and a peak, at frequency $f_\mathrm{tot}$, corresponding to the total hole density. In addit… ▽ More We measured Shubnikov-de Haas (SdH) oscillations in GaAs (100) two-dimensional holes to determine the inversion asymmetry-induced spin splitting. The Fourier spectrum of the SdH oscillations contains two peaks, at frequencies $f_-$ and $f_+$, that correspond to the hole densities of the two spin subbands and a peak, at frequency $f_\mathrm{tot}$, corresponding to the total hole density. In addition, the spectrum exhibits an anomalous peak at $f_\mathrm{tot}/2$. We also determined the effective masses of the two spin subbands by finding the inverse transform of the Fourier spectrum in the vicinity of $f_-$ and $f_+$, and then analyzing the temperature dependence of the SdH oscillations for each subband. We discuss our results in light of self-consistent calculations and previous experiments. △ Less

Submitted 14 September, 2004; originally announced September 2004.

Comments: 4 pages, 3 figures

Journal ref: Phys. Rev. B 69, 113311 (2004)