Showing 1–27 of 27 results for author: Waser, R

Roadmap to Neuromorphic Computing with Emerging Technologies

Authors: Adnan Mehonic, Daniele Ielmini, Kaushik Roy, Onur Mutlu, Shahar Kvatinsky, Teresa Serrano-Gotarredona, Bernabe Linares-Barranco, Sabina Spiga, Sergey Savelev, Alexander G Balanov, Nitin Chawla, Giuseppe Desoli, Gerardo Malavena, Christian Monzio Compagnoni, Zhongrui Wang, J Joshua Yang, Ghazi Sarwat Syed, Abu Sebastian, Thomas Mikolajick, Beatriz Noheda, Stefan Slesazeck, Bernard Dieny, Tuo-Hung, Hou, Akhil Varri , et al. (28 additional authors not shown)

Abstract: The roadmap is organized into several thematic sections, outlining current computing challenges, discussing the neuromorphic computing approach, analyzing mature and currently utilized technologies, providing an overview of emerging technologies, addressing material challenges, exploring novel computing concepts, and finally examining the maturity level of emerging technologies while determining t… ▽ More The roadmap is organized into several thematic sections, outlining current computing challenges, discussing the neuromorphic computing approach, analyzing mature and currently utilized technologies, providing an overview of emerging technologies, addressing material challenges, exploring novel computing concepts, and finally examining the maturity level of emerging technologies while determining the next essential steps for their advancement. △ Less

Submitted 5 July, 2024; v1 submitted 2 July, 2024; originally announced July 2024.

Comments: 90 pages, 22 figures, roadmap, neuromorphic

Bulk-like Mott-Transition in ultrathin Cr-doped V2O3 films and the influence of its variability on scaled devices

Authors: Johannes Mohr, Tyler Hennen, Daniel Bedau, Rainer Waser, Dirk J. Wouters

Abstract: The pressure driven Mott-transition in Chromium doped V2O3 films is investigated by direct electrical measurements on polycrystalline films with thicknesses down to 10 nm, and do** concentrations of 2%, 5% and 15%. A change in resistivity of nearly two orders of magnitude is found for 2% do**. A simulation model based on a scaling law description of the phase transition and percolative behavio… ▽ More The pressure driven Mott-transition in Chromium doped V2O3 films is investigated by direct electrical measurements on polycrystalline films with thicknesses down to 10 nm, and do** concentrations of 2%, 5% and 15%. A change in resistivity of nearly two orders of magnitude is found for 2% do**. A simulation model based on a scaling law description of the phase transition and percolative behavior in a resistor lattice is developed. This is used to show that despite significant deviations in the film structure from single crystals, the transition behavior is very similar. Finally, the influence of the variability between grains on the characteristics of scaled devices is investigated and found to allow for scaling down to at least 50 nm device width. △ Less

Submitted 13 May, 2024; originally announced May 2024.

Synaptogen: A cross-domain generative device model for large-scale neuromorphic circuit design

Authors: Tyler Hennen, Leon Brackmann, Tobias Ziegler, Sebastian Siegel, Stephan Menzel, Rainer Waser, Dirk J. Wouters, Daniel Bedau

Abstract: We present a fast generative modeling approach for resistive memories that reproduces the complex statistical properties of real-world devices. To enable efficient modeling of analog circuits, the model is implemented in Verilog-A. By training on extensive measurement data of integrated 1T1R arrays (6,000 cycles of 512 devices), an autoregressive stochastic process accurately accounts for the cros… ▽ More We present a fast generative modeling approach for resistive memories that reproduces the complex statistical properties of real-world devices. To enable efficient modeling of analog circuits, the model is implemented in Verilog-A. By training on extensive measurement data of integrated 1T1R arrays (6,000 cycles of 512 devices), an autoregressive stochastic process accurately accounts for the cross-correlations between the switching parameters, while non-linear transformations ensure agreement with both cycle-to-cycle (C2C) and device-to-device (D2D) variability. Benchmarks show that this statistically comprehensive model achieves read/write throughputs exceeding those of even highly simplified and deterministic compact models. △ Less

Submitted 9 April, 2024; originally announced April 2024.

Comments: This work has been submitted to the IEEE for possible publication. Copyright may be transferred without notice, after which this version may no longer be accessible. Code is available at https://zenodo.org/doi/10.5281/zenodo.10942560

Experimental Validation of Memristor-Aided Logic Using 1T1R TaOx RRAM Crossbar Array

Authors: Ankit Bende, Simranjeet Singh, Chandan Kumar Jha, Tim Kempen, Felix Cüppers, Christopher Bengel, Andre Zambanini, Dennis Nielinger, Sachin Patkar, Rolf Drechsler, Rainer Waser, Farhad Merchant, Vikas Rana

Abstract: Memristor-aided logic (MAGIC) design style holds a high promise for realizing digital logic-in-memory functionality. The ability to implement a specific gate in a MAGIC design style hinges on the SET-to-RESET threshold ratio. The TaOx memristive devices exhibit distinct SET-to-RESET ratios, enabling the implementation of OR and NOT operations. As the adoption of the MAGIC design style gains moment… ▽ More Memristor-aided logic (MAGIC) design style holds a high promise for realizing digital logic-in-memory functionality. The ability to implement a specific gate in a MAGIC design style hinges on the SET-to-RESET threshold ratio. The TaOx memristive devices exhibit distinct SET-to-RESET ratios, enabling the implementation of OR and NOT operations. As the adoption of the MAGIC design style gains momentum, it becomes crucial to understand the breakdown of energy consumption in the various phases of its operation. This paper presents experimental demonstrations of the OR and NOT gates on a 1T1R crossbar array. Additionally, it provides insights into the energy distribution for performing these operations at different stages. Through our experiments across different gates, we found that the energy consumption is dominated by initialization in the MAGIC design style. The energy split-up is 14.8%, 85%, and 0.2% for execution, initialization, and read operations respectively. △ Less

Submitted 16 October, 2023; originally announced October 2023.

Comments: Accepted in VLSID 2024

Sequence learning in a spiking neuronal network with memristive synapses

Authors: Younes Bouhadjar, Sebastian Siegel, Tom Tetzlaff, Markus Diesmann, Rainer Waser, Dirk J. Wouters

Abstract: Brain-inspired computing proposes a set of algorithmic principles that hold promise for advancing artificial intelligence. They endow systems with self learning capabilities, efficient energy usage, and high storage capacity. A core concept that lies at the heart of brain computation is sequence learning and prediction. This form of computation is essential for almost all our daily tasks such as m… ▽ More Brain-inspired computing proposes a set of algorithmic principles that hold promise for advancing artificial intelligence. They endow systems with self learning capabilities, efficient energy usage, and high storage capacity. A core concept that lies at the heart of brain computation is sequence learning and prediction. This form of computation is essential for almost all our daily tasks such as movement generation, perception, and language. Understanding how the brain performs such a computation is not only important to advance neuroscience but also to pave the way to new technological brain-inspired applications. A previously developed spiking neural network implementation of sequence prediction and recall learns complex, high-order sequences in an unsupervised manner by local, biologically inspired plasticity rules. An emerging type of hardware that holds promise for efficiently running this type of algorithm is neuromorphic hardware. It emulates the way the brain processes information and maps neurons and synapses directly into a physical substrate. Memristive devices have been identified as potential synaptic elements in neuromorphic hardware. In particular, redox-induced resistive random access memories (ReRAM) devices stand out at many aspects. They permit scalability, are energy efficient and fast, and can implement biological plasticity rules. In this work, we study the feasibility of using ReRAM devices as a replacement of the biological synapses in the sequence learning model. We implement and simulate the model including the ReRAM plasticity using the neural simulator NEST. We investigate the effect of different device properties on the performance characteristics of the sequence learning model, and demonstrate resilience with respect to different on-off ratios, conductance resolutions, device variability, and synaptic failure. △ Less

Submitted 29 November, 2022; originally announced November 2022.

Comments: 23 pages, 13 Figures

Fabrication of highly resistive NiO thin films for nanoelectronic applications

Authors: Johannes Mohr, Tyler Hennen, Daniel Bedau, Joyeeta Nag, Rainer Waser, Dirk J. Wouters

Abstract: Thin films of the prototypical charge transfer insulator NiO appear to be a promising material for novel nanoelectronic devices. The fabrication of the material is challenging however, and mostly a p-type semiconducting phase is reported. Here, the results of a factorial experiment are presented that allow optimization of the film properties of thin films deposited using sputtering. A cluster anal… ▽ More Thin films of the prototypical charge transfer insulator NiO appear to be a promising material for novel nanoelectronic devices. The fabrication of the material is challenging however, and mostly a p-type semiconducting phase is reported. Here, the results of a factorial experiment are presented that allow optimization of the film properties of thin films deposited using sputtering. A cluster analysis is performed, and four main types of films are found. Among them, the desired insulating phase is identified. From this material, nanoscale devices are fabricated, which demonstrate that the results carry over to relevant length scales. Initial switching results are reported. △ Less

Submitted 21 July, 2022; originally announced July 2022.

A High Throughput Generative Vector Autoregression Model for Stochastic Synapses

Authors: T. Hennen, A. Elias, J. F. Nodin, G. Molas, R. Waser, D. J. Wouters, D. Bedau

Abstract: By imitating the synaptic connectivity and plasticity of the brain, emerging electronic nanodevices offer new opportunities as the building blocks of neuromorphic systems. One challenge for largescale simulations of computational architectures based on emerging devices is to accurately capture device response, hysteresis, noise, and the covariance structure in the temporal domain as well as betwee… ▽ More By imitating the synaptic connectivity and plasticity of the brain, emerging electronic nanodevices offer new opportunities as the building blocks of neuromorphic systems. One challenge for largescale simulations of computational architectures based on emerging devices is to accurately capture device response, hysteresis, noise, and the covariance structure in the temporal domain as well as between the different device parameters. We address this challenge with a high throughput generative model for synaptic arrays that is based on a recently available type of electrical measurement data for resistive memory cells. We map this real world data onto a vector autoregressive stochastic process to accurately reproduce the device parameters and their cross-correlation structure. While closely matching the measured data, our model is still very fast; we provide parallelized implementations for both CPUs and GPUs and demonstrate array sizes above one billion cells and throughputs exceeding one hundred million weight updates per second, above the pixel rate of a 30 frames/s 4K video stream. △ Less

Submitted 10 May, 2022; originally announced May 2022.

ACM Class: G.3; B.3.1

Stabilizing amplifier with a programmable load line for characterization of nanodevices with negative differential resistance

Authors: T. Hennen, E. Wichmann, R. Waser, D. J. Wouters, D. Bedau

Abstract: Resistive switching devices and other components with negative differential resistance (NDR) are emerging as possible electronic constituents of next-generation computing architectures. Due to the NDR effects exhibited, switching operations are strongly affected by the presence of resistance in series with the memory cell. Experimental measurements useful in the development of these devices use a… ▽ More Resistive switching devices and other components with negative differential resistance (NDR) are emerging as possible electronic constituents of next-generation computing architectures. Due to the NDR effects exhibited, switching operations are strongly affected by the presence of resistance in series with the memory cell. Experimental measurements useful in the development of these devices use a deliberate addition of series resistance, which can be done either by integrating resistors on-chip or by connecting external components to the wafer probing system. The former approach is considered inflexible because the resistance value attached to a given device cannot be changed or removed, while the latter approach tends to create parasitic effects that impact controllability and interfere with measurements. In this work we introduce a circuit design for flexible characterization of two-terminal nanodevices that provides a programmatically adjustable external series resistance while maintaining low parasitic capacitance. Experimental demonstrations are given that show the impact of the series resistance on NDR and resistive switching measurements. △ Less

Submitted 30 November, 2021; originally announced December 2021.

Intrinsic RESET speed limit of valence change memories

Authors: Moritz von Witzleben, Stefan Wiefels, Andreas Kindsmüller, Pascal Stasner, Fenja Berg, Felix Cüppers, Susanne Hoffmann-Eifert, Rainer Waser, Stephan Menzel, Ulrich Böttger

Abstract: During the last decade, valence change memory (VCM) has been extensively studied due to its promising features, such as a high endurance and fast switching times. The information is stored in a high resistive state (logcial '0', HRS) and a low resistive state (logcial '1', LRS). It can also be operated in two different writing schemes, namely a unipolar switching mode (LRS and HRS are written at t… ▽ More During the last decade, valence change memory (VCM) has been extensively studied due to its promising features, such as a high endurance and fast switching times. The information is stored in a high resistive state (logcial '0', HRS) and a low resistive state (logcial '1', LRS). It can also be operated in two different writing schemes, namely a unipolar switching mode (LRS and HRS are written at the same voltage polarity) and a bipolar switching mode (LRS and HRS are written at opposite voltage polarities). VCM, however, still suffers from a large variability during writing operations and also faults occur, which are not yet fully understood and, therefore, require a better understanding of the underlying fault mechanisms. In this study, a new intrinsic failure mechanism is identified, which prohibits RESET times (transition from LRS to HRS) faster than 400 ps and possibly also limits the endurance. We demonstrate this RESET speed limitation by measuring the RESET kinetics of two valence change memory devices (namely Pt/TaO$_\mathrm{x}$/Ta and Pt/ZrO$_\mathrm{x}$/Ta) in the time regime from 50 ns to 50 ps, corresponding to the fastest writing time reported for VCM. Faster RESET times were achieved by increasing the applied pulse voltage. Above a voltage threshold it was, however, no longer possible to reset both types of devices. Instead a unipolar SET (transition from HRS to LRS) event occurred, preventing faster RESET times. The occurrence of the unipolar SET is attributed to an oxygen exchange at the interface to the Pt~electrode, which can be suppressed by introducing an oxygen blocking layer at this interface, which also allowed for 50 ps fast RESET times. △ Less

Submitted 6 October, 2021; v1 submitted 5 October, 2021; originally announced October 2021.

Comments: 27 pages, 18 figures and 69 references

Journal ref: ACS Appl. Electron. Mater. 2021, 3, 12, 5563-5572

Current-limiting amplifier for high speed measurement of resistive switching data

Authors: T. Hennen, E. Wichmann, A. Elias, J. Lille, O. Mosendz, R. Waser, D. J. Wouters, D. Bedau

Abstract: Resistive switching devices, important for emerging memory and neuromorphic applications, face significant challenges related to control of delicate filamentary states in the oxide material. As a device switches, its rapid conductivity change is involved in a positive feedback process that would lead to runaway destruction of the cell without current, voltage, or energy limitation. Typically, cell… ▽ More Resistive switching devices, important for emerging memory and neuromorphic applications, face significant challenges related to control of delicate filamentary states in the oxide material. As a device switches, its rapid conductivity change is involved in a positive feedback process that would lead to runaway destruction of the cell without current, voltage, or energy limitation. Typically, cells are directly patterned on MOS transistors to limit the current, but this approach is very restrictive as the necessary integration limits the materials available as well as the fabrication cycle time. In this article we propose an external circuit to cycle resistive memory cells, capturing the full transfer curves while driving the cells in such a way to suppress runaway transitions. Using this circuit, we demonstrate the acquisition of $10^5$ I-V loops per second without the use of on-wafer current limiting transistors. This setup brings voltage swee** measurements to a relevant timescale for applications, and enables many new experimental possibilities for device evaluation in a statistical context. △ Less

Submitted 10 February, 2021; originally announced February 2021.

ACM Class: B.3.1; B.7.1

Picosecond Multilevel Resistive Switching in Tantalum Oxide Thin Films

Authors: Ulrich Böttger, Moritz von Witzleben, Viktor Havel, Karsten Fleck, Vikas Rana, Rainer Waser, Stephan Menzel

Abstract: The increasing demand for high-density data storage leads to an increasing interest in novel memory concepts with high scalability and the opportunity of storing multiple bits in one cell. A promising candidate is the redox-based resistive switch repositing the information in form of different resistance states. For reliable programming, the underlying physical parameters need to be understood. We… ▽ More The increasing demand for high-density data storage leads to an increasing interest in novel memory concepts with high scalability and the opportunity of storing multiple bits in one cell. A promising candidate is the redox-based resistive switch repositing the information in form of different resistance states. For reliable programming, the underlying physical parameters need to be understood. We reveal that the programmable resistance states are linked to internal series resistances and the fundamental nonlinear switching kinetics. The switching kinetics of Ta$_{2}$O$_{5}$-based cells was investigated in a wide range over 15 orders of magnitude from 250 ps to 10$^{5}$ s. We found strong evidence for a switching speed of 10 ps which is consistent with analog electronic circuit simulations. On all time scales, multi-bit data storage capabilities were demonstrated. The elucidated link between fundamental material properties and multi-bit data storage paves the way for designing resistive switches for memory and neuromorphic applications. △ Less

Submitted 13 December, 2019; originally announced February 2020.

Comments: Compiled PDF should contain 24 pages, 5 figures and 50 references

Journal ref: Sci. Rep. 10 (2020) 16391

Design of materials properties and device performance in memristive systems

Authors: Michael Lübben, Felix Cüppers, Johannes Mohr, Moritz von Witzleben, Uwe Breuer, Rainer Waser, Christian Neumann, Ilia Valov

Abstract: Future development of the modern nanoelectronics and its flagships internet of things and artificial intelligence as well as many related applications is largely associated with memristive elements. This technology offers a broad spectrum of functionalities, however, it follows predominantly a phenomenological approach and crucial challenge/limit for further development remains variability and lac… ▽ More Future development of the modern nanoelectronics and its flagships internet of things and artificial intelligence as well as many related applications is largely associated with memristive elements. This technology offers a broad spectrum of functionalities, however, it follows predominantly a phenomenological approach and crucial challenge/limit for further development remains variability and lack of fundamental materials' design strategy. Here we demonstrate the vital importance of materials' purity for determining memristors' functionalities, showing that part per million foreign elements significantly change the performance. By appropriate choice of chemistry and amount of do** material we can selectively enhance desired operation mode. We highlight how dopant dependent structure and charge/potential distribution in the space charge layers and the cell capacitance determine the device kinetics and functions. We evidence for first time experimentally the relation between materials properties and switching/neuromorphic performance, thus providing rules and directions for a rational design of memristive devices. △ Less

Submitted 5 February, 2019; originally announced February 2019.

Self-Assembling Oxide Catalyst for Electrochemical Water Splitting

Authors: Daniel S. Bick, Andreas Kindsmueller, Deok-Yong Cho, Ahmed Yousef Mohamed, Thomas Bredow, Hendrik Laufen, Felix Gunkel, David N. Mueller, Theodor Schneller, Rainer Waser, Ilia Valov

Abstract: Renewable energy conversion and storage, and greenhouse gas emission-free technologies are within the primary tasks and challenges for the society. Hydrogen fuel, produced by alkaline water electrolysis is fulfilling all these demands, however the technology is economically feeble, limited by the slow rate of oxygen evolution reaction. Complex metal oxides were suggested to overcome this problem b… ▽ More Renewable energy conversion and storage, and greenhouse gas emission-free technologies are within the primary tasks and challenges for the society. Hydrogen fuel, produced by alkaline water electrolysis is fulfilling all these demands, however the technology is economically feeble, limited by the slow rate of oxygen evolution reaction. Complex metal oxides were suggested to overcome this problem being low-cost efficient catalysts. However, the insufficient long-term stability, degradation of structure and electrocatalytic activity are restricting their utilization. Here we report on a new perovskite-based self-assembling material BaCo0.98Ti0.02O3-$δ$:Co3O4 with superior performance, showing outstanding properties compared to current state-of-the-art materials without degeneration of its properties even at 353 K. By chemical and structural analysis the degradation mechanism was identified and modified by selective do**. Short-range order and chemical composition rather than long-range order are factors determining the outstanding performance. The derived general design rules can be used for further development of oxide-based electrocatalytic materials. △ Less

Submitted 11 July, 2017; originally announced July 2017.

Comments: 24 pages, 3 Figures and 5 Extended Data Figures, 1 Table, including Suplementary Information

Resistive Switching in Aqueous Nanopores by Shock Electrodeposition

Authors: Ji-Hyung Han, Ramachandran Muralidhar, Rainer Waser, Martin Z. Bazant

Abstract: Solid-state programmable metallization cells have attracted considerable attention as memristive elements for Redox-based Resistive Random Access Memory (ReRAM) for low-power and low-voltage applications. In principle, liquid-state metallization cells could offer the same advantages for aqueous systems, such as biomedical lab-on-a-chip devices, but robust resistive switching has not yet been achie… ▽ More Solid-state programmable metallization cells have attracted considerable attention as memristive elements for Redox-based Resistive Random Access Memory (ReRAM) for low-power and low-voltage applications. In principle, liquid-state metallization cells could offer the same advantages for aqueous systems, such as biomedical lab-on-a-chip devices, but robust resistive switching has not yet been achieved in liquid electrolytes, where electrodeposition is notoriously unstable to the formation of fractal dendrites. Here, the recently discovered physics of shock electrodeposition are harnessed to stabilize aqueous copper growth in polycarbonate nanopores, whose surfaces are modified with charged polymers. Stable bipolar resistive switching is demonstrated for 500 cycles with <10s retention times, prior to any optimization of the geometry or materials. △ Less

Submitted 24 August, 2016; originally announced August 2016.

Hafnium carbide formation in oxygen deficient hafnium oxide thin films

Authors: C. Rodenbücher, E. Hildebrandt, K. Szot, S. U. Sharath, J. Kurian, P. Komissinskiy, U. Breuer, R. Waser, L. Alff

Abstract: On highly oxygen deficient thin films of hafnium oxide (hafnia, HfO$_{2-x}$) contaminated with adsorbates of carbon oxides, the formation of hafnium carbide (HfC$_x$) at the surface during vacuum annealing at temperatures as low as 600 °C is reported. Using X-ray photoelectron spectroscopy the evolution of the HfC$_x$ surface layer related to a transformation from insulating into metallic state is… ▽ More On highly oxygen deficient thin films of hafnium oxide (hafnia, HfO$_{2-x}$) contaminated with adsorbates of carbon oxides, the formation of hafnium carbide (HfC$_x$) at the surface during vacuum annealing at temperatures as low as 600 °C is reported. Using X-ray photoelectron spectroscopy the evolution of the HfC$_x$ surface layer related to a transformation from insulating into metallic state is monitored in situ. In contrast, for fully stoichiometric HfO$_2$ thin films prepared and measured under identical conditions, the formation of HfC$_x$ was not detectable suggesting that the enhanced adsorption of carbon oxides on oxygen deficient films provides a carbon source for the carbide formation. This shows that a high concentration of oxygen vacancies in carbon contaminated hafnia lowers considerably the formation energy of hafnium carbide. Thus, the presence of a sufficient amount of residual carbon in resistive random access memory devices might lead to a similar carbide formation within the conducting filaments due to Joule heating. △ Less

Submitted 27 June, 2016; originally announced June 2016.

Journal ref: Appl. Phys. Lett. 108, 25, 252903 (2016)

A Complementary Resistive Switch-based Crossbar Array Adder

Authors: A. Siemon, S. Menzel, R. Waser, E. Linn

Abstract: Redox-based resistive switching devices (ReRAM) are an emerging class of non-volatile storage elements suited for nanoscale memory applications. In terms of logic operations, ReRAM devices were suggested to be used as programmable interconnects, large-scale look-up tables or for sequential logic operations. However, without additional selector devices these approaches are not suited for use in lar… ▽ More Redox-based resistive switching devices (ReRAM) are an emerging class of non-volatile storage elements suited for nanoscale memory applications. In terms of logic operations, ReRAM devices were suggested to be used as programmable interconnects, large-scale look-up tables or for sequential logic operations. However, without additional selector devices these approaches are not suited for use in large scale nanocrossbar memory arrays, which is the preferred architecture for ReRAM devices due to the minimum area consumption. To overcome this issue for the sequential logic approach, we recently introduced a novel concept, which is suited for passive crossbar arrays using complementary resistive switches (CRSs). CRS cells offer two high resistive storage states, and thus, parasitic sneak currents are efficiently avoided. However, until now the CRS-based logic-in-memory approach was only shown to be able to perform basic Boolean logic operations using a single CRS cell. In this paper, we introduce two multi-bit adder schemes using the CRS-based logic-in-memory approach. We proof the concepts by means of SPICE simulations using a dynamical memristive device model of a ReRAM cell. Finally, we show the advantages of our novel adder concept in terms of step count and number of devices in comparison to a recently published adder approach, which applies the conventional ReRAM-based sequential logic concept introduced by Borghetti et al. △ Less

Submitted 27 February, 2015; v1 submitted 8 October, 2014; originally announced October 2014.

Comments: 12 pages, accepted for IEEE Journal on Emerging and Selected Topics in Circuits and Systems (JETCAS), issue on Computing in Emerging Technologies

Applicability of Well-Established Memristive Models for Simulations of Resistive Switching Devices

Authors: E. Linn, A. Siemon, R. Waser, S. Menzel

Abstract: Highly accurate and predictive models of resistive switching devices are needed to enable future memory and logic design. Widely used is the memristive modeling approach considering resistive switches as dynamical systems. Here we introduce three evaluation criteria for memristor models, checking for plausibility of the I-V characteristics, the presence of a sufficiently non-linearity of the switc… ▽ More Highly accurate and predictive models of resistive switching devices are needed to enable future memory and logic design. Widely used is the memristive modeling approach considering resistive switches as dynamical systems. Here we introduce three evaluation criteria for memristor models, checking for plausibility of the I-V characteristics, the presence of a sufficiently non-linearity of the switching kinetics, and the feasibility of predicting the behavior of two anti-serially connected devices correctly. We analyzed two classes of models: the first class comprises common linear memristor models and the second class widely used non-linear memristive models. The linear memristor models are based on Strukovs initial memristor model extended by different window functions, while the non-linear models include Picketts physics-based memristor model and models derived thereof. This study reveals lacking predictivity of the first class of models, independent of the applied window function. Only the physics-based model is able to fulfill most of the basic evaluation criteria. △ Less

Submitted 27 February, 2015; v1 submitted 23 March, 2014; originally announced March 2014.

Comments: 9 pages; accepted for IEEE TCAS-I

Journal ref: IEEE Transactions on Circuits and Systems - Part I: Regular Papers (TCAS-I), 61, 8, pp. 2402 - 2410, (2014)

Inhomogeneity of donor do** in SrTiO3 substrates studied by fluorescence-lifetime imaging microscopy

Authors: C. Rodenbücher, T. Gensch, W. Speier, U. Breuer, M. Pilch, H. Hardtdegen, M. Mikulics, E. Zych, R. Waser, K. Szot

Abstract: Fluorescence-lifetime imaging microscopy (FLIM) was applied to investigate the donor distribution in SrTiO3 single crystals. On the surfaces of Nb- and La-doped SrTiO3, structures with different fluorescence intensities and lifetimes were found that could be related to different concentrations of Ti3+. Furthermore, the inhomogeneous distribution of donors caused a non-uniform conductivity of the s… ▽ More Fluorescence-lifetime imaging microscopy (FLIM) was applied to investigate the donor distribution in SrTiO3 single crystals. On the surfaces of Nb- and La-doped SrTiO3, structures with different fluorescence intensities and lifetimes were found that could be related to different concentrations of Ti3+. Furthermore, the inhomogeneous distribution of donors caused a non-uniform conductivity of the surface, which complicates the production of potential electronic devices by the deposition of oxide thin films on top of doped single crystals. Hence, we propose FLIM as a convenient technique (length scale: 1 $μ$m) for characterizing the quality of doped oxide surfaces, which could help to identify appropriate substrate materials. △ Less

Submitted 22 October, 2013; originally announced October 2013.

Journal ref: Appl. Phys. Lett., 103 (2013), 162904

Insulator-to-metal transition of SrTiO3:Nb single crystal surfaces induced by Ar+ bombardment

Authors: C. Rodenbücher, S. Wicklein, R. Waser, K. Szot

Abstract: In this paper, the effect of Ar+ bombardment of SrTiO3:Nb surface layers is investigated on the macro- and nanoscale using surface-sensitive methods. After bombardment, the stoichiometry and electronic structure are changed distinctly leading to an insulator-to-metal transition related to the change of the Ti "d" electron from d0 to d1 and d2. During bombardment, conducting islands are formed on t… ▽ More In this paper, the effect of Ar+ bombardment of SrTiO3:Nb surface layers is investigated on the macro- and nanoscale using surface-sensitive methods. After bombardment, the stoichiometry and electronic structure are changed distinctly leading to an insulator-to-metal transition related to the change of the Ti "d" electron from d0 to d1 and d2. During bombardment, conducting islands are formed on the surface. The induced metallic state is not stable and can be reversed due to a redox process by external oxidation and even by self-reoxidation upon heating the sample to temperatures of 300°C. △ Less

Submitted 15 March, 2013; originally announced March 2013.

Comments: 4 pages, 4 figures

Journal ref: Appl. Phys. Lett. 102 (2013), 101603

Nanobatteries in redox-based resistive switches require extension of memristor theory

Authors: Ilia Valov, Eike Linn, Stefan Tappertzhofen, Sebastian Schmelzer, Jan van den Hurk, Florian Lentz, Rainer Waser

Abstract: Redox-based nanoionic resistive memory cells (ReRAMs) are one of the most promising emerging nano-devices for future information technology with applications for memory, logic and neuromorphic computing. Recently, the serendipitous discovery of the link between ReRAMs and memristors and memristive devices has further intensified the research in this field. Here we show on both a theoretical and an… ▽ More Redox-based nanoionic resistive memory cells (ReRAMs) are one of the most promising emerging nano-devices for future information technology with applications for memory, logic and neuromorphic computing. Recently, the serendipitous discovery of the link between ReRAMs and memristors and memristive devices has further intensified the research in this field. Here we show on both a theoretical and an experimental level that nanoionic-type memristive elements are inherently controlled by non-equilibrium states resulting in a nanobattery. As a result the memristor theory must be extended to fit the observed non zerocrossing I-V characteristics. The initial electromotive force of the nanobattery depends on the chemistry and the transport properties of the materials system but can also be introduced during ReRAM cell operations. The emf has a strong impact on the dynamic behaviour of nanoscale memories, and thus, its control is one of the key factors for future device development and accurate modelling. △ Less

Submitted 11 March, 2013; originally announced March 2013.

Comments: Submitted to Nature Communications, Manuscript: 20 pages, 5 figures, Supplementary Information: 19 pages, 12 figures, 2 tables

Polarization dependent interface properties of ferroelectric Schottky barriers studied by soft X-ray absorption spectroscopy

Authors: H. Kohlstedt, A. Petraru, M. Meier J. Denlinger, J. Guo, Y. Wanli, A. Scholl, B. Freelon, T. Schneller, R. Waser, P. Yu, R. Ramesh, T. Learmonth, P. -A. Glans, K. E. Smith

Abstract: We applied soft X-ray absorption spectroscopy to study the Ti L-edge in ferroelectric capacitors using a modified total electron yield method. The inner photo currents and the X-ray absorption spectra were polarization state dependent. The results are explained on the basis of photo electric effects and the inner potential in the ferroelectric capacitors as a result of back-to-back Schottky barr… ▽ More We applied soft X-ray absorption spectroscopy to study the Ti L-edge in ferroelectric capacitors using a modified total electron yield method. The inner photo currents and the X-ray absorption spectra were polarization state dependent. The results are explained on the basis of photo electric effects and the inner potential in the ferroelectric capacitors as a result of back-to-back Schottky barriers superimposed by the potential due to the depolarization field. In general, the presented method offers the opportunity to investigate the electronic structure of buried metal-insulator and metal-semiconductor interfaces in thin film devices. Corresponding author: [email protected] △ Less

Submitted 23 October, 2008; originally announced October 2008.

Ferromagnetic 0-pi Josephson junctions

Authors: M. Weides, H. Kohlstedt, R. Waser, M. Kemmler, J. Pfeiffer, D. Koelle, R. Kleiner, E. Goldobin

Abstract: We present a study on low-$T_c$ superconductor-insulator-ferromagnet-superconductor (SIFS) Josephson junctions. SIFS junctions have gained considerable interest in recent years because they show a number of interesting properties for future classical and quantum computing devices. We optimized the fabrication process of these junctions to achieve a homogeneous current transport, ending up with h… ▽ More We present a study on low-$T_c$ superconductor-insulator-ferromagnet-superconductor (SIFS) Josephson junctions. SIFS junctions have gained considerable interest in recent years because they show a number of interesting properties for future classical and quantum computing devices. We optimized the fabrication process of these junctions to achieve a homogeneous current transport, ending up with high-quality samples. Depending on the thickness of the ferromagnetic layer and on temperature, the SIFS junctions are in the ground state with a phase drop either 0 or $π$. By using a ferromagnetic layer with variable step-like thickness along the junction, we obtained a so-called 0-$π$ Josephson junction, in which 0 and $π$ ground states compete with each other. At a certain temperature the 0 and $π$ parts of the junction are perfectly symmetric, i.e. the absolute critical current densities are equal. In this case the degenerate ground state corresponds to a vortex of supercurrent circulating clock- or counterclockwise and creating a magnetic flux which carries a fraction of the magnetic flux quantum $Φ_0$. △ Less

Submitted 27 April, 2007; v1 submitted 29 January, 2007; originally announced January 2007.

Comments: 5 pages, 5 figures

Journal ref: Applied Physics A 89, 613-617 (2007)

0-pi Josephson tunnel junctions with ferromagnetic barrier

Authors: M. Weides, M. Kemmler, E. Goldobin, H. Kohlstedt, R. Waser, D. Koelle, R. Kleiner

Abstract: We fabricated high quality Nb/Al_2O_3/Ni_{0.6}Cu_{0.4}/Nb superconductor-insulator-ferromagnet-superconductor Josephson tunnel junctions. Using a ferromagnetic layer with a step-like thickness, we obtain a 0-pi junction, with equal lengths and critical currents of 0 and pi parts. The ground state of our 330 microns (1.3 lambda_J) long junction corresponds to a spontaneous vortex of supercurrent… ▽ More We fabricated high quality Nb/Al_2O_3/Ni_{0.6}Cu_{0.4}/Nb superconductor-insulator-ferromagnet-superconductor Josephson tunnel junctions. Using a ferromagnetic layer with a step-like thickness, we obtain a 0-pi junction, with equal lengths and critical currents of 0 and pi parts. The ground state of our 330 microns (1.3 lambda_J) long junction corresponds to a spontaneous vortex of supercurrent pinned at the 0-pi step and carrying ~6.7% of the magnetic flux quantum Phi_0. The dependence of the critical current on the applied magnetic field shows a clear minimum in the vicinity of zero field. △ Less

Submitted 5 October, 2006; v1 submitted 26 May, 2006; originally announced May 2006.

Comments: submitted to PRL

Journal ref: Phys. Rev. Lett. 97, 247001 (2006)

Theoretical current-voltage characteristics of ferroelectric tunnel junctions

Authors: H. Kohlstedt, N. A. Pertsev, J. Rodriguez Contreras, R. Waser

Abstract: We present the concept of ferroelectric tunnel junctions (FTJs). These junctions consist of two metal electrodes separated by a nanometer-thick ferroelectric barrier. The current-voltage characteristics of FTJs are analyzed under the assumption that the direct electron tunneling represents the dominant conduction mechanism. First, the influence of converse piezoelectric effect inherent in ferroe… ▽ More We present the concept of ferroelectric tunnel junctions (FTJs). These junctions consist of two metal electrodes separated by a nanometer-thick ferroelectric barrier. The current-voltage characteristics of FTJs are analyzed under the assumption that the direct electron tunneling represents the dominant conduction mechanism. First, the influence of converse piezoelectric effect inherent in ferroelectric materials on the tunnel current is described. The calculations show that the lattice strains of piezoelectric origin modify the current-voltage relationship owing to strain-induced changes of the barrier thickness, electron effective mass, and position of the conduction-band edge. Remarkably, the conductance minimum becomes shifted from zero voltage due to the piezoelectric effect, and a strain-related resistive switching takes place after the polarization reversal in a ferroelectric barrier. Second, we analyze the influence of the internal electric field arising due to imperfect screening of polarization charges by electrons in metal electrodes. It is shown that, for asymmetric FTJs, this depolarizing-field effect also leads to a considerable change of the barrier resistance after the polarization reversal. However, the symmetry of the resulting current-voltage loop is different from that characteristic of the strain-related resistive switching. The crossover from one to another type of the hysteretic curve, which accompanies the increase of FTJ asymmetry, is described taking into account both the strain and depolarizing-field effects. It is noted that asymmetric FTJs with dissimilar top and bottom electrodes are preferable for the non-volatile memory applications because of a larger resistance on/off ratio. △ Less

Submitted 22 March, 2005; originally announced March 2005.

Comments: 14 pages, 8 figures

Journal ref: Physical Review B, vol. 72, art. 125341 (2005)

Polarization states of polydomain epitaxial Pb(Zr1-xTix)O3 thin films and their dielectric properties

Authors: V. G. Kukhar, N. A. Pertsev, H. Kohlstedt, R. Waser

Abstract: Ferroelectric and dielectric properties of polydomain (twinned) single-crystal Pb(Zr1-xTix)O3 thin films are described with the aid of a nonlinear thermodynamic theory, which has been developed recently for epitaxial ferroelectric films with dense laminar domain structures. For Pb(Zr1-xTix)O3 (PZT) films with compositions x = 0.9, 0.8, 0.7, 0.6, 0.5, and 0.4, the "misfit strain-temperature" phas… ▽ More Ferroelectric and dielectric properties of polydomain (twinned) single-crystal Pb(Zr1-xTix)O3 thin films are described with the aid of a nonlinear thermodynamic theory, which has been developed recently for epitaxial ferroelectric films with dense laminar domain structures. For Pb(Zr1-xTix)O3 (PZT) films with compositions x = 0.9, 0.8, 0.7, 0.6, 0.5, and 0.4, the "misfit strain-temperature" phase diagrams are calculated and compared with each other. It is found that the equilibrium diagrams of PZT films with x > 0.7 are similar to the diagram of PbTiO3 films. They consist of only four different stability ranges, which correspond to the paraelectric phase, single-domain tetragonal ferroelectric phase, and two pseudo-tetragonal domain patterns. In contrast, at x = 0.4, 0.5, and 0.6, the equilibrium diagram displays a rich variety of stable polarization states, involving at least one monoclinic polydomain state. Using the developed phase diagrams, the mean out-of-plane polarization of a poled PZT film is calculated as a function of the misfit strain and composition. Theoretical results are compared with the measured remanent polarizations of PZT films grown on SrTiO3. Dependence of the out-of-plane dielectric response of PZT films on the misfit strain in the heterostructure is also reported. △ Less

Submitted 25 November, 2004; originally announced November 2004.

Comments: 23 pages, 4 figures

Journal ref: Physical Review B, vol. 73, art. 214103 (2006)

Ultrathin epitaxial ferroelectric films grown on compressive substrates: Competition between the surface and strain effects

Authors: A. G. Zembilgotov, N. A. Pertsev, H. Kohlstedt, R. Waser

Abstract: The mean-field Landau-type theory is used to analyze the polarization properties of epitaxial ferroelectric thin films grown on dissimilar cubic substrates, which induce biaxial compressive stress in the film plane. The intrinsic effect of the film surfaces on the spontaneous polarization is taken into account via the concept of the extrapolation length. The theory simultaneously allows for the… ▽ More The mean-field Landau-type theory is used to analyze the polarization properties of epitaxial ferroelectric thin films grown on dissimilar cubic substrates, which induce biaxial compressive stress in the film plane. The intrinsic effect of the film surfaces on the spontaneous polarization is taken into account via the concept of the extrapolation length. The theory simultaneously allows for the influence of the misfit strain imposed on the film lattice by a thick substrate. Numerical calculations are performed for PbTiO3 and BaTiO3 films under an assumption of the polarization reduction in surface layers. The film mean polarization is calculated as a function of film thickness, temperature, and misfit strain. It is shown that the negative intrinsic size effect is reduced in epitaxial films due to the in-plane compression of the film lattice. At room temperature, strong reduction of the mean polarization may take place only in ultrathin films (thickness ~ 1 nm). Theoretical predictions are compared with the available experimental data on polarization properties of BaTiO3 films grown on SrRuO3 coated SrTiO3. △ Less

Submitted 12 November, 2001; originally announced November 2001.

Comments: 8 pages with 7 figures. Submitted to J. Appl. Phys

Report number: EPH-JAP-11-01

Thermodynamic theory of epitaxial ferroelectric thin films with dense domain structures

Authors: V. G. Koukhar, N. A. Pertsev, R. Waser

Abstract: A Landau-Ginsburg-Devonshire-type nonlinear phenomenological theory is presented, which enables the thermodynamic description of dense laminar polydomain states in epitaxial ferroelectric thin films. The theory explicitly takes into account the mechanical substrate effect on the polarizations and lattice strains in dissimilar elastic domains (twins). Numerical calculations are performed for PbTi… ▽ More A Landau-Ginsburg-Devonshire-type nonlinear phenomenological theory is presented, which enables the thermodynamic description of dense laminar polydomain states in epitaxial ferroelectric thin films. The theory explicitly takes into account the mechanical substrate effect on the polarizations and lattice strains in dissimilar elastic domains (twins). Numerical calculations are performed for PbTiO3 and BaTiO3 films grown on (001)-oriented cubic substrates. The "misfit strain-temperature" phase diagrams are developed for these films, showing stability ranges of various possible polydomain and single-domain states. Three types of polarization instabilities are revealed for polydomain epitaxial ferroelectric films, which may lead to the formation of new polydomain states forbidden in bulk crystals. The total dielectric and piezoelectric small-signal responses of polydomain films are calculated, resulting from both the volume and domain-wall contributions. For BaTiO3 films, strong dielectric anomalies are predicted at room temperature near special values of the misfit strain. △ Less

Submitted 26 February, 2001; originally announced February 2001.

Comments: 19 pages, 8 figures

Journal ref: Physical Review B, vol. 64, art. 214103 (2001)