Undoped accumulation-mode Si/SiGe quantum dots
Authors:
Matthew G. Borselli,
Kevin Eng,
Richard S. Ross,
Thomas M. Hazard,
Kevin S. Holabird,
Biqin Huang,
Andrey A. Kiselev,
Peter W. Deelman,
Leslie D. Warren,
Ivan Milosavljevic,
Adele E. Schmitz,
Marko Sokolich,
Mark F. Gyure,
Andrew T. Hunter
Abstract:
We report on a quantum dot device design that combines the low disorder properties of undoped SiGe heterostructure materials with an overlap** gate stack in which each electrostatic gate has a dominant and unique function -- control of individual quantum dot occupancies and of lateral tunneling into and between dots. Control of the tunneling rate between a dot and an electron bath is demonstrate…
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We report on a quantum dot device design that combines the low disorder properties of undoped SiGe heterostructure materials with an overlap** gate stack in which each electrostatic gate has a dominant and unique function -- control of individual quantum dot occupancies and of lateral tunneling into and between dots. Control of the tunneling rate between a dot and an electron bath is demonstrated over more than nine orders of magnitude and independently confirmed by direct measurement within the bandwidth of our amplifiers. The inter-dot tunnel coupling at the (0,2)<-->(1,1) charge configuration anti-crossing is directly measured to quantify the control of a single inter-dot tunnel barrier gate. A simple exponential dependence is sufficient to describe each of these tunneling processes as a function of the controlling gate voltage.
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Submitted 4 August, 2014;
originally announced August 2014.
Measurement of valley splitting in high-symmetry Si/SiGe quantum dots
Authors:
Matthew G. Borselli,
Richard S. Ross,
Andrey A. Kiselev,
Edward T. Croke,
Kevin S. Holabird,
Peter W. Deelman,
Leslie D. Warren,
Ivan Alvarado-Rodriguez,
Ivan Milosavljevic,
Fiona C. Ku,
Wah S. Wong,
Adele E. Schmitz,
Marko Sokolich,
Mark F. Gyure,
Andrew T. Hunter
Abstract:
We have demonstrated few-electron quantum dots in Si/SiGe and InGaAs, with occupation number controllable from N = 0. These display a high degree of spatial symmetry and identifiable shell structure. Magnetospectroscopy measurements show that two Si-based devices possess a singlet N =2 ground state at low magnetic field and therefore the two-fold valley degeneracy is lifted. The valley splittings…
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We have demonstrated few-electron quantum dots in Si/SiGe and InGaAs, with occupation number controllable from N = 0. These display a high degree of spatial symmetry and identifiable shell structure. Magnetospectroscopy measurements show that two Si-based devices possess a singlet N =2 ground state at low magnetic field and therefore the two-fold valley degeneracy is lifted. The valley splittings in these two devices were 120 and 270 μeV, suggesting the presence of atomically sharp interfaces in our heterostructures.
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Submitted 13 April, 2011; v1 submitted 6 December, 2010;
originally announced December 2010.
