Showing 1–4 of 4 results for author: Warren, E L

Spectral effects on the energy harvesting efficiency of 2- and 4-terminal tandem photovoltaics

Authors: Robert Witteck, John. F. Geisz, Emily. L. Warren, William. E. McMahon

Abstract: In this work, we investigate how a varying spectral irradiance and top cell bandgap affect the energy yield of 2T and 4T perovskite//silicon tandem solar cells under outdoor operating conditions. For the comparison, we first validate an optoelectronic model employing a 1-year outdoor data set for a 4T mechanical stacked GaAs on Silicon tandem device. We then use our verified model to simulate pero… ▽ More In this work, we investigate how a varying spectral irradiance and top cell bandgap affect the energy yield of 2T and 4T perovskite//silicon tandem solar cells under outdoor operating conditions. For the comparison, we first validate an optoelectronic model employing a 1-year outdoor data set for a 4T mechanical stacked GaAs on Silicon tandem device. We then use our verified model to simulate perovskite//silicon tandem devices with a varying perovskite top cell bandgap for a location in Golden, Colorado, USA. We introduce a spectral binning method to efficiently reduce and improve the visualization of the 1-min-resolved environmental data while maintaining the simulation accuracy. Our findings reveal that, for a device that is current-matched under standard testing conditions, the annual spectral deviation reduces the energy harvesting efficiency by only 2%$_\mathrm{rel}$. When additional realistic losses for the 4T are taken into account, 2T devices are shown to have an energy-harvesting efficiency that is at parity or higher. Deviations in the top cell bandgap of more than 0.1 eV from current matching result in a reduced energy-harvesting efficiency of more than 5%$_\mathrm{rel}$ for the 2T tandem device. △ Less

Submitted 10 October, 2023; originally announced October 2023.

Comments: submitted to RRL

Efficient light-trap** in ultrathin GaAs solar cells using quasi-random photonic crystals

Authors: Jeronimo Buencuerpo, Theresa E. Saenz, Mark Steger, Michelle Young, Emily L. Warren, John F. Geisz, Myles A. Steiner, Adele C. Tamboli

Abstract: Ultrathin solar cells reduce material usage and allow the use of lower-quality materials thanks to their one order of magnitude smaller thickness than their conventional counterparts. However, efficient photonic light-trap** is required to harvest the incident light efficiently for an otherwise insufficient absorber thickness. Quasi-random photonic crystals are predicted to have high efficient l… ▽ More Ultrathin solar cells reduce material usage and allow the use of lower-quality materials thanks to their one order of magnitude smaller thickness than their conventional counterparts. However, efficient photonic light-trap** is required to harvest the incident light efficiently for an otherwise insufficient absorber thickness. Quasi-random photonic crystals are predicted to have high efficient light-trap** while being more robust under angle and thickness variations than simple photonic crystals. Here we experimentally demonstrate a light-trap** solution based on quasi-random photonic crystals fabricated by polymer blend lithography. We control the average lattice parameter by modifying the spin-coating speed. We demonstrate an ultrathin GaAs cell of 260 nm with a rear quasi-random pattern with submicron features, and a Jsc =26.4 mA/cm2 and an efficiency of 22.35% under the global solar spectrum. △ Less

Submitted 7 February, 2022; originally announced February 2022.

Inverted GaInP/GaAs Three-Terminal Heterojunction Bipolar Transistor Solar Cell

Authors: Marius H. Zehender, Simon. A. Svatek, Myles A. Steiner, Iván García, Pablo García Linares, Emily L. Warren, Antonio Martí, Adele. C. Tamboli, Elisa Antolín

Abstract: Here we present the experimental results of an inverted three-terminal heterojunction bipolar transistor solar cell (HBTSC) made of GaInP/GaAs. The inverted growth and processing enable contacting the intermediate layer (base) from the bottom, which improves the cell performance by reducing shadow factor and series resistance at the same time. With this prototype we show that an inverted processin… ▽ More Here we present the experimental results of an inverted three-terminal heterojunction bipolar transistor solar cell (HBTSC) made of GaInP/GaAs. The inverted growth and processing enable contacting the intermediate layer (base) from the bottom, which improves the cell performance by reducing shadow factor and series resistance at the same time. With this prototype we show that an inverted processing of a three-terminal solar cell is feasible and pave the way for the application of epitaxial lift-off, substrate reuse and mechanical stacking to the HBTSC which can eventually lead to a low-cost high-efficiency III-V-on-Si HBTSC technology. △ Less

Submitted 7 May, 2021; originally announced May 2021.

Solar energy conversion properties and defect physics of ZnSiP$_2$

Authors: Aaron D. Martinez, Emily L. Warren, Prashun Gorai, Kasper A. Borup, Darius Kuciauskas, Patricia C. Dippo, Brenden R. Ortiz, Robin T. Macaluso, Sau D. Nguyen, Ann L. Greenaway, Shannon W. Boettcher, Andrew G. Norman, Vladan Stevanović, Eric S. Toberer, Adele C. Tamboli

Abstract: Implementation of an optically active material on silicon has been a persistent technological challenge. For tandem photovoltaics using a Si bottom cell, as well as for other optoelectronic applications, there has been a longstanding need for optically active, wide band gap materials that can be integrated with Si. ZnSiP$_2$ is a stable, wide band gap (2.1 eV) material that is lattice matched with… ▽ More Implementation of an optically active material on silicon has been a persistent technological challenge. For tandem photovoltaics using a Si bottom cell, as well as for other optoelectronic applications, there has been a longstanding need for optically active, wide band gap materials that can be integrated with Si. ZnSiP$_2$ is a stable, wide band gap (2.1 eV) material that is lattice matched with silicon and comprised of inexpensive elements. As we show in this paper, it is also a defect-tolerant material. Here, we report the first ZnSiP$_2$ photovoltaic device. We show that ZnSiP$_2$ has excellent photoresponse and high open circuit voltage of 1.3 V, as measured in a photoelectrochemical configuration. The high voltage and low band gap-voltage offset are on par with much more mature wide band gap III-V materials. Photoluminescence data combined with theoretical defect calculations illuminate the defect physics underlying this high voltage, showing that the intrinsic defects in ZnSiP$_2$ are shallow and the minority carrier lifetime is 7 ns. These favorable results encourage the development of ZnSiP$_2$ and related materials as photovoltaic absorber materials. △ Less

Submitted 29 December, 2015; v1 submitted 17 June, 2015; originally announced June 2015.

Comments: As accepted by EES on December 11th, 2015