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OPTIMADE, an API for exchanging materials data
Authors:
Casper W. Andersen,
Rickard Armiento,
Evgeny Blokhin,
Gareth J. Conduit,
Shyam Dwaraknath,
Matthew L. Evans,
Ádám Fekete,
Abhijith Gopakumar,
Saulius Gražulis,
Andrius Merkys,
Fawzi Mohamed,
Corey Oses,
Giovanni Pizzi,
Gian-Marco Rignanese,
Markus Scheidgen,
Leopold Talirz,
Cormac Toher,
Donald Winston,
Rossella Aversa,
Kamal Choudhary,
Pauline Colinet,
Stefano Curtarolo,
Davide Di Stefano,
Claudia Draxl,
Suleyman Er
, et al. (31 additional authors not shown)
Abstract:
The Open Databases Integration for Materials Design (OPTIMADE) consortium has designed a universal application programming interface (API) to make materials databases accessible and interoperable. We outline the first stable release of the specification, v1.0, which is already supported by many leading databases and several software packages. We illustrate the advantages of the OPTIMADE API throug…
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The Open Databases Integration for Materials Design (OPTIMADE) consortium has designed a universal application programming interface (API) to make materials databases accessible and interoperable. We outline the first stable release of the specification, v1.0, which is already supported by many leading databases and several software packages. We illustrate the advantages of the OPTIMADE API through worked examples on each of the public materials databases that support the full API specification.
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Submitted 25 August, 2021; v1 submitted 2 March, 2021;
originally announced March 2021.
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Influence of the "second gap" on the transparency-conductivity compromise in transparent conducting oxides: an ab initio study
Authors:
Viet-Anh Ha,
David Waroquiers,
Gian-Marco Rignanese,
Geoffroy Hautier
Abstract:
Transparent conducting oxides (TCOs) are essential to many technologies. These materials are doped (\emph{n}- or \emph{p}-type) oxides with a large enough band gap (ideally $>$3~eV) to ensure transparency. However, the high carrier concentration present in TCOs lead additionally to the possibility for optical transitions from the occupied conduction bands to higher states for \emph{n}-type materia…
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Transparent conducting oxides (TCOs) are essential to many technologies. These materials are doped (\emph{n}- or \emph{p}-type) oxides with a large enough band gap (ideally $>$3~eV) to ensure transparency. However, the high carrier concentration present in TCOs lead additionally to the possibility for optical transitions from the occupied conduction bands to higher states for \emph{n}-type materials and from lower states to the unoccupied valence bands for \emph{p}-type TCOs. The "second gap" formed by these transitions might limit transparency and a large second gap has been sometimes proposed as a design criteria for high performance TCOs. Here, we study the influence of this second gap on optical absorption using \emph{ab initio} computations for several well-known \emph{n}- and \emph{p}-type TCOs. Our work demonstrates that most known \emph{n}-type TCOs do not suffer from second gap absorption in the visible even at very high carrier concentrations. On the contrary, \emph{p}-type oxides show lowering of their optical transmission for high carrier concentrations due to second gap effects. We link this dissimilarity to the different chemistries involved in \emph{n}- versus typical \emph{p}-type TCOs. Quantitatively, we show that second gap effects lead to only moderate loss of transmission (even in p-type TCOs) and suggest that a wide second gap, while beneficial, should not be considered as a needed criteria for a working TCO.
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Submitted 13 March, 2016;
originally announced March 2016.
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Low-Dimensional Transport and Large Thermoelectric Power Factors in Bulk Semiconductors by Band Engineering of Highly Directional Electronic States
Authors:
Daniel I. Bilc,
Geoffroy Hautier,
David Waroquiers,
Gian-Marco Rignanese,
Philippe Ghosez
Abstract:
Thermoelectrics are promising to address energy issues but their exploitation is still hampered by low efficiencies. So far, much improvement has been achieved by reducing the thermal conductivity but less by maximizing the power factor. The latter imposes apparently conflicting requirements on the band structure: a narrow energy distribution and a low effective mass. Quantum confinement in nanost…
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Thermoelectrics are promising to address energy issues but their exploitation is still hampered by low efficiencies. So far, much improvement has been achieved by reducing the thermal conductivity but less by maximizing the power factor. The latter imposes apparently conflicting requirements on the band structure: a narrow energy distribution and a low effective mass. Quantum confinement in nanostructures or the introduction of resonant states were suggested as possible solutions to this paradox but with limited success. Here, we propose an original approach to fulfill both requirements in bulk semiconductors. It exploits the highly-directional character of some orbitals to engineer the band-structure and produce a type of low-dimensional transport similar to that targeted in nanostructures, while retaining isotropic properties. Using first-principles calculations, the theoretical concept is demonstrated in Fe$_2$YZ Heusler compounds, yielding power factors 4-5 times larger than in classical thermoelectrics at room temperature. Our findings are totally generic and rationalize the search of alternative compounds with a similar behavior. Beyond thermoelectricity, these might be relevant also in the context of electronic, superconducting or photovoltaic applications.
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Submitted 2 April, 2015; v1 submitted 19 May, 2014;
originally announced May 2014.
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Band widths and gaps from the Tran-Blaha functional : Comparison with many-body perturbation theory
Authors:
David Waroquiers,
Aurélien Lherbier,
Anna Miglio,
Martin Stankovski,
Samuel Poncé,
Micael J. T. Oliveira,
Matteo Giantomassi,
Gian-Marco Rignanese,
Xavier Gonze
Abstract:
For a set of ten crystalline materials (oxides and semiconductors), we compute the electronic band structures using the Tran-Blaha [Phys. Rev. Lett. 102, 226401 (2009)] (TB09) functional. The band widths and gaps are compared with those from the local-density approximation (LDA) functional, many-body perturbation theory (MBPT), and experiments. At the density-functional theory (DFT) level, TB09 le…
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For a set of ten crystalline materials (oxides and semiconductors), we compute the electronic band structures using the Tran-Blaha [Phys. Rev. Lett. 102, 226401 (2009)] (TB09) functional. The band widths and gaps are compared with those from the local-density approximation (LDA) functional, many-body perturbation theory (MBPT), and experiments. At the density-functional theory (DFT) level, TB09 leads to band gaps in much better agreement with experiments than LDA. However, we observe that it globally underestimates, often strongly, the valence (and conduction) band widths (more than LDA). MBPT corrections are calculated starting from both LDA and TB09 eigenenergies and wavefunctions. They lead to a much better agreement with experimental data for band widths. The band gaps obtained starting from TB09 are close to those from quasi-particle self-consistent GW calculations, at a much reduced cost. Finally, we explore the possibility to tune one of the semi-empirical parameters of the TB09 functional in order to obtain simultaneously better band gaps and widths. We find that these requirements are conflicting.
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Submitted 27 February, 2013;
originally announced February 2013.
