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AlCl$_{3}$-dosed Si(100)-2$\times$1: Adsorbates, chlorinated Al chains, and incorporated Al
Authors:
Matthew S. Radue,
Sungha Baek,
Azadeh Farzaneh,
K. J. Dwyer,
Quinn Campbell,
Andrew D. Baczewski,
Ezra Bussmann,
George T. Wang,
Yifei Mo,
Shashank Misra,
R. E. Butera
Abstract:
The adsorption of AlCl$_{3}$ on Si(100) and the effect of annealing the AlCl$_{3}$-dosed substrate was studied to reveal key surface processes for the development of atomic-precision acceptor-do** techniques. This investigation was performed via scanning tunneling microscopy (STM), X-ray photoelectron spectroscopy (XPS), and density functional theory (DFT) calculations. At room temperature, AlCl…
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The adsorption of AlCl$_{3}$ on Si(100) and the effect of annealing the AlCl$_{3}$-dosed substrate was studied to reveal key surface processes for the development of atomic-precision acceptor-do** techniques. This investigation was performed via scanning tunneling microscopy (STM), X-ray photoelectron spectroscopy (XPS), and density functional theory (DFT) calculations. At room temperature, AlCl$_{3}$ readily adsorbed to the Si substrate dimers and dissociated to form a variety of species. Annealing of the AlCl$_{3}$-dosed substrate at temperatures below 450 $^{\circ}$C produced unique chlorinated aluminum chains (CACs) elongated along the Si(100) dimer row direction. An atomic model for the chains is proposed with supporting DFT calculations. Al was incorporated into the Si substrate upon annealing at 450 $^{\circ}$C and above, and Cl desorption was observed for temperatures beyond 450 $^{\circ}$C. Al-incorporated samples were encapsulated in Si and characterized by secondary ion mass spectrometry (SIMS) depth profiling to quantify the Al atom concentration, which was found to be in excess of 10$^{20}$ cm$^{-3}$ across a $\sim$2.7 nm thick $δ$-doped region. The Al concentration achieved here and the processing parameters utilized promote AlCl$_{3}$ as a viable gaseous precursor for novel acceptor-doped Si materials and devices for quantum computing.
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Submitted 22 January, 2021;
originally announced January 2021.
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Giant Field Enhancement in Longitudinal Epsilon Near Zero Films
Authors:
Mohammad Kamandi,
Caner Guclu,
Ting Shan Luk,
George T. Wang,
Filippo Capolino
Abstract:
We report that a longitudinal epsilon-near-zero (LENZ) film leads to giant field enhancement and strong radiation emission of sources in it and that these features are superior to what found in previous studies related to isotropic ENZ. LENZ films are uniaxially anisotropic films where relative permittivity along the normal direction to the film is much smaller than unity, while the permittivity i…
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We report that a longitudinal epsilon-near-zero (LENZ) film leads to giant field enhancement and strong radiation emission of sources in it and that these features are superior to what found in previous studies related to isotropic ENZ. LENZ films are uniaxially anisotropic films where relative permittivity along the normal direction to the film is much smaller than unity, while the permittivity in the transverse plane of the film is not vanishing. It has been shown previously that realistic isotropic ENZ films do not provide large field enhancement due to material losses, however, we show the loss effects can be overcome using LENZ films. We also prove that in comparison to the (isotropic) ENZ case, the LENZ film field enhancement is not only remarkably larger but it also occurs for a wider range of angles of incidence. Importantly, the field enhancement near the interface of the LENZ film is almost independent of the thickness unlike for the isotropic ENZ case where extremely small thickness is required. We show that for a LENZ structure consisting of a multilayer of dysprosium-doped cadmium oxide and silicon accounting for realistic losses, field intensity enhancement of 30 is obtained which is almost 10 times larger than that obtained with realistic ENZ materials
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Submitted 2 February, 2017; v1 submitted 30 January, 2017;
originally announced January 2017.
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Two-dimensional electron gas in monolayer InN quantum wells
Authors:
W. Pan,
E. Dimakis,
G. T. Wang,
T. D. Moustakas,
D. C. Tsui
Abstract:
We report in this letter experimental results that confirm the two-dimensional nature of the electron systems in monolayer InN quantum wells embedded in GaN barriers. The electron density and mobility of the two-dimensional electron system (2DES) in these InN quantum wells are 5x10^{15} cm^{-2} and 420 cm^2/Vs, respectively. Moreover, the diagonal resistance of the 2DES shows virtually no temperat…
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We report in this letter experimental results that confirm the two-dimensional nature of the electron systems in monolayer InN quantum wells embedded in GaN barriers. The electron density and mobility of the two-dimensional electron system (2DES) in these InN quantum wells are 5x10^{15} cm^{-2} and 420 cm^2/Vs, respectively. Moreover, the diagonal resistance of the 2DES shows virtually no temperature dependence in a wide temperature range, indicating the topological nature of the 2DES.
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Submitted 14 August, 2014;
originally announced August 2014.
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Radiative Emission Enhancement Using Nano-antennas Made of Hyperbolic Metamaterial Resonators
Authors:
Caner Guclu,
Ting Shan Luk,
George T. Wang,
Filippo Capolino
Abstract:
A hyperbolic metamaterial (HM) resonator is analyzed as a nano-antenna for enhancing the radiative emission of quantum emitters in its vicinity. It has been shown that the spontaneous emission rate by an emitter near a hyperbolic metamaterial substrate is enhanced dramatically due to very large density of states. However, enhanced coupling to the free-space, which is central to applications such a…
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A hyperbolic metamaterial (HM) resonator is analyzed as a nano-antenna for enhancing the radiative emission of quantum emitters in its vicinity. It has been shown that the spontaneous emission rate by an emitter near a hyperbolic metamaterial substrate is enhanced dramatically due to very large density of states. However, enhanced coupling to the free-space, which is central to applications such as solid-state lighting, has not been investigated significantly. Here, we numerically demonstrate approximately 100 times enhancement of the free-space radiative emission at 660 nm wavelength by utilizing a cylindrical HM resonator with a radius of 54 nm and a height of 80 nm on top of an opaque silver-cladded substrate. We also show how the free-space radiation enhancement factor depends on the dipole orientation and the location of the emitter near the subwavelength resonator. Furthermore, we calculate that an array of HM resonators with subwavelength spacings can maintain most of the enhancement effect of a single resonator.
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Submitted 13 August, 2014; v1 submitted 23 May, 2014;
originally announced May 2014.
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Nanoscale Effects on Heterojunction Electron Gases in GaN/AlGaN Core/Shell Nanowires
Authors:
Bryan M. Wong,
François Léonard,
Qiming Li,
George T. Wang
Abstract:
The electronic properties of heterojunction electron gases formed in GaN/AlGaN core/shell nanowires with hexagonal and triangular cross-sections are studied theoretically. We show that at nanoscale dimensions, the non-polar hexagonal system exhibits degenerate quasi-one-dimensional electron gases at the hexagon corners, which transition to a core-centered electron gas at lower do**. In contrast,…
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The electronic properties of heterojunction electron gases formed in GaN/AlGaN core/shell nanowires with hexagonal and triangular cross-sections are studied theoretically. We show that at nanoscale dimensions, the non-polar hexagonal system exhibits degenerate quasi-one-dimensional electron gases at the hexagon corners, which transition to a core-centered electron gas at lower do**. In contrast, polar triangular core/shell nanowires show either a non-degenerate electron gas on the polar face or a single quasi-one-dimensional electron gas at the corner opposite the polar face, depending on the termination of the polar face. More generally, our results indicate that electron gases in closed nanoscale systems are qualitatively different from their bulk counterparts.
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Submitted 28 June, 2011; v1 submitted 23 June, 2011;
originally announced June 2011.
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Gutzwiller density functional calculations of the electronic structure of FeAs-based superconductors: Evidence for a three-dimensional Fermi surface
Authors:
G. T. Wang,
Y. M. Qian,
G. Xu,
X. Dai,
Z. Fang
Abstract:
The electronic structures of FeAs-compounds strongly depend on the
Fe-As bonding, which can not be described successfully by the local density approximation (LDA). Treating the multi-orbital fluctuations from $ab$-$initio$ by LDA+Gutzwiller method, we are now able to predict the correct Fe-As bond-length, and find that Fe-As bonding-strength is 30% weaker, which will explain the observed "soft…
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The electronic structures of FeAs-compounds strongly depend on the
Fe-As bonding, which can not be described successfully by the local density approximation (LDA). Treating the multi-orbital fluctuations from $ab$-$initio$ by LDA+Gutzwiller method, we are now able to predict the correct Fe-As bond-length, and find that Fe-As bonding-strength is 30% weaker, which will explain the observed "soft phonon". The bands are narrowed by a factor of 2, and the $d_{3z^2-r^2}$ orbital is pushed up to cross the Fermi level, forming 3-dimensional Fermi surfaces, which suppress the anisotropy and the ($π,π$) nesting. The inter-orbital Hund's coupling $J$ rather than $U$ plays crucial roles to obtain these results.
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Submitted 19 May, 2009; v1 submitted 7 March, 2009;
originally announced March 2009.
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Evidence for the band broadening across the ferromagnetic transition in Cr$_{1/3}$NbSe$_2$
Authors:
W. Z. Hu,
G. T. Wang,
Rongwei Hu,
C. Petrovic,
E. Morosan,
R. J. Cava. Z. Fang,
N. L. Wang
Abstract:
The electronic structure of Cr$_{1/3}$NbSe$_2$ is studied via optical spectroscopy. We observe two low-energy interband transitions in the paramagnetic phase, which split into four peaks as the compound enters the ferromagnetic state. The band structure calculation indicates the four peaks are interband transitions to the spin up Cr e$_g$ states. We show that the peak splitting below the Curie t…
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The electronic structure of Cr$_{1/3}$NbSe$_2$ is studied via optical spectroscopy. We observe two low-energy interband transitions in the paramagnetic phase, which split into four peaks as the compound enters the ferromagnetic state. The band structure calculation indicates the four peaks are interband transitions to the spin up Cr e$_g$ states. We show that the peak splitting below the Curie temperature is \emph{not} due to the exchange splitting of spin up and down bands, but directly reflects a band broadening effect in Cr-derived states upon the spontaneous ferromagnetic ordering.
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Submitted 5 August, 2008;
originally announced August 2008.
