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Quantum magnetic oscillations in the absence of closed electron trajectories
Authors:
Z. E. Krix,
O. A. Tkachenko,
V. A. Tkachenko,
D. Q. Wang,
O. Klochan,
A. R. Hamilton,
O. P. Sushkov
Abstract:
Quantum magnetic oscillations in crystals are typically understood in terms of Bohr-Sommerfeld quantisation, the frequency of oscillation is given by the area of a closed electron trajectory. However, since the 1970s, oscillations have been observed with frequencies that do not correspond to closed electron trajectories and this effect has remained not fully understood. Previous theory has focused…
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Quantum magnetic oscillations in crystals are typically understood in terms of Bohr-Sommerfeld quantisation, the frequency of oscillation is given by the area of a closed electron trajectory. However, since the 1970s, oscillations have been observed with frequencies that do not correspond to closed electron trajectories and this effect has remained not fully understood. Previous theory has focused on explaining the effect using various kinetic mechanisms, however, frequencies without a closed electron orbit have been observed in equilibrium and so a kinetic mechanism cannot be the entire story. In this work we develop a theory which explains these frequencies in equilibrium and can thus be used to understand measurements of both Shubnikov-de Haas and de Haas-van Alphen oscillations. We show, analytically, that these frequencies arise due to multi-electron correlations. We then extend our theory to explain a recent experiment on artificial crystals in GaAs two-dimensional electron gases, which revealed for the first time magnetic oscillations having frequencies that are half of those previously observed. We show that the half-frequencies arise in equilibrium from single-particle dynamics with account of impurities. Our analytic results are reinforced by exact numerics, which we also use clarify prior works on the kinetic regime.
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Submitted 6 April, 2024;
originally announced April 2024.
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Lateral 2D superlattices in GaAs heterostructures with independent control of carrier density and modulation potential
Authors:
D. Q. Wang,
D. Reuter,
A. D. Wieck,
A. R. Hamilton,
O. Klochan
Abstract:
We present a new double-layer design for 2D surface superlattice systems in GaAs-AlGaAs heterostructures. Unlike previous studies, our device (1) uses an in-situ gate, which allows very short period superlattice in high mobility, shallow heterostructures; (2) enables independent control of the carrier density and the superlattice modulation potential amplitude over a wide range. We characterise th…
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We present a new double-layer design for 2D surface superlattice systems in GaAs-AlGaAs heterostructures. Unlike previous studies, our device (1) uses an in-situ gate, which allows very short period superlattice in high mobility, shallow heterostructures; (2) enables independent control of the carrier density and the superlattice modulation potential amplitude over a wide range. We characterise this device design using low-temperature magneto-transport measurements and show that the fabrication process caused minimal damage to the system. We demonstrate the tuning of potential modulation from weak (much smaller than Fermi energy) to strong (larger than the Fermi energy) regimes.
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Submitted 11 March, 2024;
originally announced March 2024.
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Formation of artificial Fermi surfaces with a triangular superlattice on a conventional two dimensional electron gas
Authors:
Daisy Q. Wang,
Zeb Krix,
Oleg P. Sushkov,
Ian Farrer,
David A. Ritchie,
Alexander R. Hamilton,
Oleh Klochan
Abstract:
In nearly free electron theory the imposition of a periodic electrostatic potential on free electrons creates the bandstructure of a material, determined by the crystal lattice spacing and geometry. Imposing an artificially designed potential to the electrons confined in a GaAs quantum well makes it possible to engineer synthetic two-dimensional band structures, with electronic properties differen…
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In nearly free electron theory the imposition of a periodic electrostatic potential on free electrons creates the bandstructure of a material, determined by the crystal lattice spacing and geometry. Imposing an artificially designed potential to the electrons confined in a GaAs quantum well makes it possible to engineer synthetic two-dimensional band structures, with electronic properties different from those in the host semiconductor. Here we report the fabrication and study of a tuneable triangular artificial lattice on a GaAs/AlGaAs heterostructure where it is possible to transform from the original GaAs bandstructure and Fermi surface to a new bandstructure with multiple artificial Fermi surfaces simply by altering a gate bias. For weak electrostatic potential modulation magnetotransport measurements reveal quantum oscillations from the GaAs two-dimensional Fermi surface, and classical oscillations due to these electrons scattering from the artificial lattice. Increasing the strength of the modulation reveals new quantum oscillations due to the formation of multiple artificial Fermi surfaces, and ultimately to new classical oscillations of the electrons from the artificial Fermi surface scattering from the superlattice modulation. These results show that low disorder gate-tuneable lateral superlattices can be used to form artificial two dimensional crystals with designer electronic properties.
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Submitted 11 March, 2024;
originally announced March 2024.
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Tuning the bandstructure of electrons in a two-dimensional artificial electrostatic crystal in GaAs quantum wells
Authors:
Daisy Q. Wang,
Zeb Krix,
Olga A. Tkachenko,
Vitaly A. Tkachenko,
Chong Chen,
Ian Farrer,
David A. Ritchie,
Oleg P. Sushkov,
Alexander R. Hamilton,
Oleh Klochan
Abstract:
The electronic properties of solids are determined by the crystal structure and interactions between electrons, giving rise to a variety of collective phenomena including superconductivity, strange metals and correlated insulators. The mechanisms underpinning many of these collective phenomena remain unknown, driving interest in creating artificial crystals which replicate the system of interest w…
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The electronic properties of solids are determined by the crystal structure and interactions between electrons, giving rise to a variety of collective phenomena including superconductivity, strange metals and correlated insulators. The mechanisms underpinning many of these collective phenomena remain unknown, driving interest in creating artificial crystals which replicate the system of interest while allowing precise control of key parameters. Cold atoms trapped in optical lattices provide great flexibility and tunability [1, 2], but cannot replicate the long range Coulomb interactions and long range hop** that drive collective phenomena in real crystals. Solid state approaches support long range hop** and interactions, but previous attempts with laterally patterned semiconductor systems were not able to create tunable low disorder artificial crystals, while approaches based on Moire superlattices in twisted two-dimensional (2D) materials [3, 4] have limited tunability and control of lattice geometry. Here we demonstrate the formation of highly tunable artificial crystals by superimposing a periodic electrostatic potential on the 2D electron gas in an ultrashallow (25 nm deep) GaAs quantum well. The 100 nm period artificial crystal is identified by the formation of a new bandstructure, different from the original cubic crystal and unique to the artificial triangular lattice: transport measurements show the Hall coefficient changing sign as the chemical potential sweeps through the artificial bands. Uniquely, the artificial bandstructure can be continuously tuned from parabolic free-electron bands into linear graphene-like and flat kagome-like bands in a single device. This approach allows the formation arbitrary geometry 2D artificial crystals, opening a new route to studying collective quantum states.
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Submitted 20 February, 2024;
originally announced February 2024.
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Geometric control of universal hydrodynamic flow in a two dimensional electron fluid
Authors:
Aydın Cem Keser,
Daisy Q. Wang,
Oleh Klochan,
Derek Y. H. Ho,
Olga A. Tkachenko,
Vitaly A. Tkachenko,
Dimitrie Culcer,
Shaffique Adam,
Ian Farrer,
David A. Ritchie,
Oleg P. Sushkov,
Alexander R. Hamilton
Abstract:
Fluid dynamics is one of the cornerstones of modern physics and has recently found applications in the transport of electrons in solids. In most solids electron transport is dominated by extrinsic factors, such as sample geometry and scattering from impurities. However in the hydrodynamic regime Coulomb interactions transform the electron motion from independent particles to the collective motion…
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Fluid dynamics is one of the cornerstones of modern physics and has recently found applications in the transport of electrons in solids. In most solids electron transport is dominated by extrinsic factors, such as sample geometry and scattering from impurities. However in the hydrodynamic regime Coulomb interactions transform the electron motion from independent particles to the collective motion of a viscous `electron fluid'. The fluid viscosity is an intrinsic property of the electron system, determined solely by the electron-electron interactions. Resolving the universal intrinsic viscosity is challenging, as it only affects the resistance through interactions with the sample boundaries, whose roughness is not only unknown but also varies from device to device. Here we eliminate all unknown parameters by fabricating samples with smooth sidewalls to achieve the perfect slip boundary condition, which has been elusive both in molecular fluids and electronic systems. We engineer the device geometry to create viscous dissipation and reveal the true intrinsic hydrodynamic properties of a 2D system. We observe a clear transition from ballistic to hydrodynamic electron motion, driven by both temperature and magnetic field. We directly measure the viscosity and electron-electron scattering lifetime (the Fermi quasiparticle lifetime) over a wide temperature range without fitting parameters, and show they have a strong dependence on electron density that cannot be explained by conventional theories based on the Random Phase Approximation.
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Submitted 17 March, 2021;
originally announced March 2021.
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Anisotropic Pauli Spin Blockade of Holes in a GaAs Double Quantum Dot
Authors:
Daisy Q. Wang,
Oleh Klochan,
Jo-Tzu Hung,
Dimitrie Culcer,
Ian Farrer,
David A. Ritchie,
Alexander R. Hamilton
Abstract:
Electrically defined semiconductor quantum dots are attractive systems for spin manipulation and quantum information processing. Heavy-holes in both Si and GaAs are promising candidates for all-electrical spin manipulation, owing to the weak hyperfine interaction and strong spin-orbit interaction. However, it has only recently become possible to make stable quantum dots in these systems, mainly du…
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Electrically defined semiconductor quantum dots are attractive systems for spin manipulation and quantum information processing. Heavy-holes in both Si and GaAs are promising candidates for all-electrical spin manipulation, owing to the weak hyperfine interaction and strong spin-orbit interaction. However, it has only recently become possible to make stable quantum dots in these systems, mainly due to difficulties in device fabrication and stability. Here we present electrical transport measurements on holes in a gate-defined double quantum dot in a $\mathrm{GaAs/Al_xGa_{1-x}As}$ heterostructure. We observe clear Pauli spin blockade and demonstrate that the lifting of this spin blockade by an external magnetic field is highly anisotropic. Numerical calculations of heavy-hole transport through a double quantum dot in the presence of strong spin-orbit coupling show quantitative agreement with experimental results and suggest that the observed anisotropy can be explained by both the anisotropic effective hole g-factor and the surface Dresselhaus spin-orbit interaction.
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Submitted 3 December, 2016;
originally announced December 2016.
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Unveiling the Massive Stars in the Galactic Center
Authors:
Hui Dong,
Jon Mauerhan,
Mark R. Morris,
Daniel Q. Wang,
Angela Cotera
Abstract:
We present our recent efforts to unveil and understand the origin of massive stars outside the three massive star clusters in the Galactic Center. From our HST/NICMOS survey of the Galactic Center, we have identified 180 Paschen-alpha emitting sources, most of which should be evolved massive stars with strong optically thin stellar winds. Recently, we obtained Gemini GNIRS/NIFS H- and K-band spect…
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We present our recent efforts to unveil and understand the origin of massive stars outside the three massive star clusters in the Galactic Center. From our HST/NICMOS survey of the Galactic Center, we have identified 180 Paschen-alpha emitting sources, most of which should be evolved massive stars with strong optically thin stellar winds. Recently, we obtained Gemini GNIRS/NIFS H- and K-band spectra of eight massive stars near the Arches cluster. From their radial velocities, ages and masses, we suggest that in our sample, two stars are previous members of the Arches cluster, while other two stars embedded in the H1/H2 HII regions formed in-situ.
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Submitted 2 December, 2013;
originally announced December 2013.
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X-ray Detections of Sub-millimetre Galaxies: Active Galactic Nuclei Versus Starburst Contribution
Authors:
Seth P. Johnson,
Grant W. Wilson,
Danial Q. Wang,
Christina C. Williams,
Kim S. Scott,
Min S. Yun,
Alexandra Pope,
James Lowenthal,
Itziar Aretxaga,
David Hughes,
M. J. Kim,
Sungeun. Kim,
Yoichi Tamura,
Kotaro Kohno,
Hajime Ezawa,
Ryohei Kawabe,
Tai Oshima
Abstract:
We present a large-scale study of the X-ray properties and near-IR-to-radio SEDs of submillimetre galaxies (SMGs) detected at 1.1mm with the AzTEC instrument across a ~1.2 square degree area of the sky. Combining deep 2-4 Ms Chandra data with Spitzer IRAC/MIPS and VLA data within the GOODS-N/S and COSMOS fields, we find evidence for AGN activity in ~14 percent of 271 AzTEC SMGs, ~28 percent consid…
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We present a large-scale study of the X-ray properties and near-IR-to-radio SEDs of submillimetre galaxies (SMGs) detected at 1.1mm with the AzTEC instrument across a ~1.2 square degree area of the sky. Combining deep 2-4 Ms Chandra data with Spitzer IRAC/MIPS and VLA data within the GOODS-N/S and COSMOS fields, we find evidence for AGN activity in ~14 percent of 271 AzTEC SMGs, ~28 percent considering only the two GOODS fields. Through X-ray spectral modeling and SED fitting using Monte Carlo Markov Chain techniques to Siebenmorgen et al. (2004) (AGN) and Efstathiou et al. (2000) (starburst) templates, we find that while star formation dominates the IR emission, with SFRs ~100-1000 M_sun/yr, the X-ray emission for most sources is almost exclusively from obscured AGNs, with column densities in excess of 10^23 cm^-2. Only for ~6 percent of our sources do we find an X-ray-derived SFR consistent with NIR-to-radio SED derived SFRs. Inclusion of the X-ray luminosities as a prior to the NIR-to-radio SED effectively sets the AGN luminosity and SFR, preventing significant contribution from the AGN template. Our SED modeling further shows that the AGN and starburst templates typically lack the required 1.1 mm emission necessary to match observations, arguing for an extended, cool dust component. The cross correlation function between the full samples of X-ray sources and SMGs in these fields does not indicate a strong correlation between the two populations at large scales, suggesting that SMGs and AGNs do not necessarily trace the same underlying large scale structure. Combined with the remaining X-ray-dim SMGs, this suggests that sub-mm bright sources may evolve along multiple tracks, with X-ray-detected SMGs representing transitionary objects between periods of high star formation and AGN activity while X-ray-faint SMGs represent a brief starburst phase of more normal galaxies.
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Submitted 4 February, 2013;
originally announced February 2013.
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Pygmy and Giant Dipole Resonances by Coulomb Excitation using a Quantum Molecular Dynamics model
Authors:
C. Tao,
Y. G. Ma,
G. Q. Zhang,
X. G. Cao,
D. Q. Fang. H. W. Wang
Abstract:
Pygmy and Giant Dipole Resonance (PDR and GDR) in Ni isotopes have been investigated by Coulomb excitation in the framework of the Isospin-dependent Quantum Molecular Dynamics model (IQMD). The spectra of $γ$ rays are calculated and the peak energy, the strength and Full Width at Half Maximum (FWHM) of GDR and PDR have been extracted. Their sensitivities to nuclear equation of state, especially to…
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Pygmy and Giant Dipole Resonance (PDR and GDR) in Ni isotopes have been investigated by Coulomb excitation in the framework of the Isospin-dependent Quantum Molecular Dynamics model (IQMD). The spectra of $γ$ rays are calculated and the peak energy, the strength and Full Width at Half Maximum (FWHM) of GDR and PDR have been extracted. Their sensitivities to nuclear equation of state, especially to its symmetry energy term are also explored. By a comparison with the other mean-field calculations, we obtain the reasonable values for symmetry energy and its slope parameter at saturation, which gives an important constrain for IQMD model. In addition, we also studied the neutron excess dependence of GDR and PDR parameters for Ni isotopes and found that the energy-weighted sum rule (EWSR) $PDR_{m_1}/GDR_{m_1}%$ increases linearly with the neutron excess.
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Submitted 1 February, 2013; v1 submitted 13 December, 2012;
originally announced December 2012.
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Fabrication and characterisation of ambipolar devices on an undoped AlGaAs/GaAs heterostructure
Authors:
J. C. H. Chen,
D. Q. Wang,
O. Klochan,
A. P. Micolich,
K. Das Gupta,
F. Sfigakis,
D. A. Ritchie,
D. Reuter,
A. D. Wieck,
A. R. Hamilton
Abstract:
We have fabricated AlGaAs/GaAs heterostructure devices in which the conduction channel can be populated with either electrons or holes simply by changing the polarity of a gate bias. The heterostructures are entirely undoped, and carriers are instead induced electrostatically. We use these devices to perform a direct comparison of the scattering mechanisms of two-dimensional (2D) electrons (…
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We have fabricated AlGaAs/GaAs heterostructure devices in which the conduction channel can be populated with either electrons or holes simply by changing the polarity of a gate bias. The heterostructures are entirely undoped, and carriers are instead induced electrostatically. We use these devices to perform a direct comparison of the scattering mechanisms of two-dimensional (2D) electrons ($μ_\textrm{peak}=4\times10^6\textrm{cm}^2/\textrm{Vs}$) and holes ($μ_\textrm{peak}=0.8\times10^6\textrm{cm}^2/\textrm{Vs}$) in the same conduction channel with nominally identical disorder potentials. We find significant discrepancies between electron and hole scattering, with the hole mobility being considerably lower than expected from simple theory.
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Submitted 3 April, 2012;
originally announced April 2012.
