Showing 1–3 of 3 results for author: Waluyo, I

Elucidating the active phases of CoOx films on Au(111) in the CO Oxidation Reaction

Authors: Hao Chen, Lorenz J. Falling, Heath Kersell, George Yan, Xiao Zhao, Judit Oliver-Meseguer, Slavomir Nemsak, Adrian Hunt, Iradwikanari Waluyo, Hirohito Ogasawara, Alexis Bell, Philippe Sautet, Miquel Salmeron

Abstract: Using CoOx thin films supported on Au(111) single crystal surfaces as model catalysts for the CO oxidation reaction we show that three reaction regimes exist in response to chemical and topographic restructuring of the CoOx catalyst as a function of reactant gas phase CO/O2 stoichiometry a finding that highlights the versatility of catalysts and their evolution in response to reaction conditions.… ▽ More Using CoOx thin films supported on Au(111) single crystal surfaces as model catalysts for the CO oxidation reaction we show that three reaction regimes exist in response to chemical and topographic restructuring of the CoOx catalyst as a function of reactant gas phase CO/O2 stoichiometry a finding that highlights the versatility of catalysts and their evolution in response to reaction conditions. Under oxygen-lean conditions and moderate temperatures (below 150C degrees) partially oxidized films containing CoO were found to be efficient catalysts. In contrast, stoichiometric CoO films containing only Co2+ form carbonates in the presence of CO that poison the reaction below 300 C degrees. Under oxygen-rich conditions a more oxidized catalyst phase forms containing Co3+ species that is effective in a wide temperature range. Resonant photoemission spectroscopy (ResPES) revealed the unique role of Co3+ sites in catalyzing the CO oxidation. DFT calculations provided deeper insights into the pathway and free energy barriers for the reactions on these oxide phases. △ Less

Submitted 26 April, 2023; originally announced April 2023.

Chemical profiles of the oxides on tantalum in state of the art superconducting circuits

Authors: Russell A. McLellan, Aveek Dutta, Chenyu Zhou, Yichen Jia, Conan Weiland, Xin Gui, Alexander P. M. Place, Kevin D. Crowley, Xuan Hoang Le, Trisha Madhavan, Youqi Gang, Lukas Baker, Ashley R. Head, Iradwikanari Waluyo, Ruoshui Li, Kim Kisslinger, Adrian Hunt, Ignace Jarrige, Stephen A. Lyon, Andi M. Barbour, Robert J. Cava, Andrew A. Houck, Steven L. Hulbert, Mingzhao Liu, Andrew L. Walter , et al. (1 additional authors not shown)

Abstract: Over the past decades, superconducting qubits have emerged as one of the leading hardware platforms for realizing a quantum processor. Consequently, researchers have made significant effort to understand the loss channels that limit the coherence times of superconducting qubits. A major source of loss has been attributed to two level systems that are present at the material interfaces. We recently… ▽ More Over the past decades, superconducting qubits have emerged as one of the leading hardware platforms for realizing a quantum processor. Consequently, researchers have made significant effort to understand the loss channels that limit the coherence times of superconducting qubits. A major source of loss has been attributed to two level systems that are present at the material interfaces. We recently showed that replacing the metal in the capacitor of a transmon with tantalum yields record relaxation and coherence times for superconducting qubits, motivating a detailed study of the tantalum surface. In this work, we study the chemical profile of the surface of tantalum films grown on c-plane sapphire using variable energy X-ray photoelectron spectroscopy (VEXPS). We identify the different oxidation states of tantalum that are present in the native oxide resulting from exposure to air, and we measure their distribution through the depth of the film. Furthermore, we show how the volume and depth distribution of these tantalum oxidation states can be altered by various chemical treatments. By correlating these measurements with detailed measurements of quantum devices, we can improve our understanding of the microscopic device losses. △ Less

Submitted 20 January, 2023; v1 submitted 11 January, 2023; originally announced January 2023.

Microscopic Relaxation Channels in Materials for Superconducting Qubits

Authors: Anjali Premkumar, Conan Weiland, Sooyeon Hwang, Berthold Jaeck, Alexander P. M. Place, Iradwikanari Waluyo, Adrian Hunt, Valentina Bisogni, Jonathan Pelliciari, Andi Barbour, Mike S. Miller, Paola Russo, Fernando Camino, Kim Kisslinger, Xiao Tong, Mark S. Hybertsen, Andrew A. Houck, Ignace Jarrige

Abstract: Despite mounting evidence that materials imperfections are a major obstacle to practical applications of superconducting qubits, connections between microscopic material properties and qubit coherence are poorly understood. Here, we perform measurements of transmon qubit relaxation times $T_1$ in parallel with spectroscopy and microscopy of the thin polycrystalline niobium films used in qubit fabr… ▽ More Despite mounting evidence that materials imperfections are a major obstacle to practical applications of superconducting qubits, connections between microscopic material properties and qubit coherence are poorly understood. Here, we perform measurements of transmon qubit relaxation times $T_1$ in parallel with spectroscopy and microscopy of the thin polycrystalline niobium films used in qubit fabrication. By comparing results for films deposited using three techniques, we reveal correlations between $T_1$ and grain size, enhanced oxygen diffusion along grain boundaries, and the concentration of suboxides near the surface. Physical mechanisms connect these microscopic properties to residual surface resistance and $T_1$ through losses arising from the grain boundaries and from defects in the suboxides. Further, experiments show that the residual resistance ratio can be used as a figure of merit for qubit lifetime. This comprehensive approach to understanding qubit decoherence charts a pathway for materials-driven improvements of superconducting qubit performance. △ Less

Submitted 6 April, 2020; originally announced April 2020.