Showing 1–33 of 33 results for author: Walker, A R H

Quantum Hall Transport Measurements of Lateral p-n Junctions Formed via Precise Spatial Photodo** of Graphene/hBN Heterostructures

Authors: Son T. Le, Thuc T. Mai, Maria F. Munoz, Angela R. Hight Walker, Curt A. Richter, Aubrey T. Hanbicki, Adam L. Friedman

Abstract: Doped semiconductors are a central and crucial component of all integrated circuits. By using a combination of white light and a focused laser beam, and exploiting hBN defect states, heterostructures of hBN/Graphene/hBN are photodoped in-operando, reproducibly and reversibly. We demonstrate device geometries with spatially-defined do** type and magnitude. After each optical do** procedure, mag… ▽ More Doped semiconductors are a central and crucial component of all integrated circuits. By using a combination of white light and a focused laser beam, and exploiting hBN defect states, heterostructures of hBN/Graphene/hBN are photodoped in-operando, reproducibly and reversibly. We demonstrate device geometries with spatially-defined do** type and magnitude. After each optical do** procedure, magnetotransport measurements including quantum Hall measurements are performed to characterize the device performance. In the unipolar (p+-p-p+ and n-n+-n) configurations, we observe quantization of the longitudinal resistance, proving well-defined doped regions and interfaces that are further analyzed by Landauer-Buttiker modeling. Our unique measurements and modeling of these optically doped devices reveal a complete separation of the p- and n-Landau level edge states. The non-interaction of the edge states results in an observed "insulating" state in devices with a bi-polar p-n-p configuration that is uncommon and has not been measured previously in graphene devices. This insulating state could be utilized in high-performance graphene electrical switches. These quantitative magnetotransport measurements confirm that these do** techniques can be applied to any 2D materials encapsulated within hBN layers, enabling versatile, rewritable circuit elements for future computing and memory applications. △ Less

Submitted 3 June, 2024; v1 submitted 4 March, 2024; originally announced March 2024.

Raman fingerprints of spin-phonon coupling and magnetic transition in an organic molecule intercalated Cr2Ge2Te6

Authors: Sudeshna Samanta, Hector Iturriaga, Thuc T. Mai, Adam J. Biacchi, Rajbul Islam, Angela R. Hight Walker, Mohamed Fathi Sanad, Charudatta Phatak, Ryan Siebenaller, Emmanuel Rowe Michael A. Susner, Fei Xue, Srinivasa R. Singamaneni

Abstract: The manipulation of spin-phonon coupling in both formations and explorations of magnetism in two-dimensional van der Waals ferromagnetic semiconductors facilitates unprecedented prospects for spintronics devices. The interlayer engineering tunes spin-phonon coupling significantly and holds the promise for controllable magnetism via organic cation intercalation. Here, we present spectroscopic evide… ▽ More The manipulation of spin-phonon coupling in both formations and explorations of magnetism in two-dimensional van der Waals ferromagnetic semiconductors facilitates unprecedented prospects for spintronics devices. The interlayer engineering tunes spin-phonon coupling significantly and holds the promise for controllable magnetism via organic cation intercalation. Here, we present spectroscopic evidence to reveal the intercalation effect on intrinsic magnetic and electronic transitions in quasi-two-dimensional Cr2Ge2Te6 using tetrabutyl ammonium as the intercalant. The temperature-evolution of Raman modes E_g^3 and A_g^1, along with the magnetization measurements, unambiguously captures the enhancement of the ferromagnetic Curie temperature in the intercalated heterostructure. Moreover, the E_g^4 mode highlighted the increased effect of spin-phonon interaction in magnetic order-induced lattice distortion. Combined with the first-principle calculations, we observed a substantial number of electrons transferred from TBA+ to Cr through the interface. These results provide the interplay between spin-phonon coupling and magnetic ordering in van der Waals magnets where Raman fingerprints would be highly beneficial for further understanding the manipulation of magnetism in layered heterostructures. △ Less

Submitted 2 December, 2023; originally announced December 2023.

Optical Signatures of Strain Differences in Epitaxial Graphene Nanoribbons

Authors: Heather M. Hill, Ching-Chen Yeh, Swapnil M. Mhatre, Ngoc Thanh Mai Tran, Hanbyul **, Adam J. Biacchi, Chi-Te Liang, Angela R. Hight Walker, Albert F. Rigosi

Abstract: We demonstrate the preparation of both armchair and zigzag epitaxial graphene nanoribbons (GNRs) on 4H-SiC using a polymer-assisted, sublimation growth method. Historically, the preparation of GNRs depended on the quality, or smoothness, of the surface changes during growth. The physical phenomenon of terrace step formation introduces the risk of GNR deformation along sidewalls, but the risk is he… ▽ More We demonstrate the preparation of both armchair and zigzag epitaxial graphene nanoribbons (GNRs) on 4H-SiC using a polymer-assisted, sublimation growth method. Historically, the preparation of GNRs depended on the quality, or smoothness, of the surface changes during growth. The physical phenomenon of terrace step formation introduces the risk of GNR deformation along sidewalls, but the risk is heavily mitigated by this polymer-assisted sublimation method. Two widths (100 nm and 50 nm) are examined electrically and optically for both armchair and zigzag GNRs. Our electrical results support the expected behaviors of the GNRs, while the optical signatures of variable strain reveal the subtle differences among all the GNR species measured. △ Less

Submitted 28 February, 2023; originally announced February 2023.

Spectroscopy of photoionization from the $^1E$ singlet state in nitrogen$-$vacancy centers in diamond

Authors: Sean M. Blakley, Thuc T. Mai, Stephen J. Moxim, Jason T. Ryan, Adam J. Biacchi, Angela R. Hight Walker, Robert D. McMichael

Abstract: The $^1E-^1A_1$ singlet manifold of the negatively charged nitrogen vacancy $(NV^-)$ center in diamond plays a central role in the quantum information and quantum sensing applications of the $NV^-$ center. However, the energy of this manifold within the diamond bandgap and with respect to the $^3A_2-^3E$ triplet manifold has not been measured directly. Using field-quenching effects on photolumines… ▽ More The $^1E-^1A_1$ singlet manifold of the negatively charged nitrogen vacancy $(NV^-)$ center in diamond plays a central role in the quantum information and quantum sensing applications of the $NV^-$ center. However, the energy of this manifold within the diamond bandgap and with respect to the $^3A_2-^3E$ triplet manifold has not been measured directly. Using field-quenching effects on photoluminescence (PL) spectra, we report on the energy gap between the $^1E-^1A_1$ singlet manifold and the $^3A_2$ and $^3E$ ground and excited triplet states of the $NV^-$ as a function of excitation wavelength and power, temperature, and applied magnetic field in a heavily nitrogen-doped sample. Increased PL and decreased zero-phonon line width from the $NV^0$ were observed in the presence of an applied magnetic field, indicating ionization from the long-lived $^1E$ singlet state. A temperature-dependent ionization threshold between 532 nm and 550 nm was found, locating the singlet states within the diamond band gap. △ Less

Submitted 26 February, 2024; v1 submitted 24 January, 2023; originally announced January 2023.

Comments: 10 pages, 7 figures. Submission to Physical Review B

Ring-Exchange Interaction Effects on Magnons in Dirac Magnet CoTiO$_3$

Authors: Yufei Li, Thuc T. Mai, M. Karaki, E. V. Jasper, K. F. Garrity, C. Lyon, D. Shaw, T. DeLazzer, A. J. Biacchi, R. L. Dally, D. M. Heligman, J. Gdanski, T. Adel, M. F. Muñoz, A. Giovannone, A. Pawbake, C. Faugeras, J. R. Simpson, K. Ross, N. Trivedi, Y. M. Lu, A. R. Hight Walker, R. Valdés Aguilar

Abstract: The magnetic interactions that determine magnetic order and magnon energies typically involve only two spins. While rare, multi-spin interactions can also appear in quantum magnets and be the driving force in the ground state selection and in the nature of its excitations. By performing time-domain terahertz and magneto-Raman spectroscopy measurements combined with theoretical modeling, we determi… ▽ More The magnetic interactions that determine magnetic order and magnon energies typically involve only two spins. While rare, multi-spin interactions can also appear in quantum magnets and be the driving force in the ground state selection and in the nature of its excitations. By performing time-domain terahertz and magneto-Raman spectroscopy measurements combined with theoretical modeling, we determine the origin of the magnon excitation gap in Dirac antiferromagnet CoTiO$_3$. By adding a ring-exchange interaction in a hexagonal plaquette of the honeycomb lattice to both an XXZ spin model and to a low energy spin-orbital flavor wave model, a gap is generated in the magnon spectrum at the Brillouin zone center. With this addition, the flavor wave model reproduces a large swath of experimental results including terahertz, Raman, inelastic neutron scattering, and magnetization experiments. △ Less

Submitted 4 June, 2024; v1 submitted 10 December, 2022; originally announced December 2022.

Comments: 8 pages, 4 figures in main text, 27 pages and 11 figures in supplement. Published May 21st, 2024 in PRB

Journal ref: Phys. Rev. B. 109, 184436 (2024)

Specifics of the Elemental Excitations in "True One-Dimensional" MoI$_3$ van der Waals Nanowires

Authors: Fariborz Kargar, Zahra Barani, Nicholas R. Sesing, Thuc T. Mai, Topojit Debnath, Huairuo Zhang, Yuhang Liu, Yanbing Zhu, Subhajit Ghosh, Adam J. Biacchi, Felipe H. da Jornada, Ludwig Bartels, Tehseen Adel, Angela R. Hight Walker, Albert V. Davydov, Tina T. Salguero, Roger K. Lake, Alexander A. Balandin

Abstract: We report on the temperature evolution of the polarization-dependent Raman spectrum of exfoliated MoI$_3$, a van der Waals material with a "true one-dimensional" crystal structure that can be exfoliated to individual atomic chains. The temperature evolution of several Raman features reveals anomalous behavior suggesting a phase transition of a magnetic origin. Theoretical considerations indicate t… ▽ More We report on the temperature evolution of the polarization-dependent Raman spectrum of exfoliated MoI$_3$, a van der Waals material with a "true one-dimensional" crystal structure that can be exfoliated to individual atomic chains. The temperature evolution of several Raman features reveals anomalous behavior suggesting a phase transition of a magnetic origin. Theoretical considerations indicate that MoI$_3$ is an easy-plane antiferromagnet with alternating spins along the dimerized chains and with inter-chain helical spin ordering. The calculated frequencies of the phonons and magnons are consistent with the interpretation of the experimental Raman data. The obtained results shed light on the specifics of the phononic and magnonic states in MoI$_3$ and provide a strong motivation for future study of this unique material with potential for spintronic device applications. △ Less

Submitted 10 October, 2022; originally announced October 2022.

Comments: 28 pages

Room temperature ferromagnetism in intercalated Fe3-xGeTe2 van der Waals magnet

Authors: Hector Iturriaga, Luis M. Martinez, Thuc T. Mai, Mathias Augustin, Angela R. Hight Walker, M. F. Sanad, Sreeprasad. T. Sreenivasan, Y. Liu, Elton J. G. Santos, C. Petrovic, Srinivasa R. Singamaneni

Abstract: Among several well-known transition metal-based compounds, the van der Waals (vdW) Fe3-xGeTe2 (FGT) magnet is a strong candidate for use in two-dimensional (2D) magnetic devices due to its strong perpendicular magnetic anisotropy, sizeable Curie temperature (TC ~ 154 K), and versatile magnetic character that is retained in the low-dimensional limit. While the TC remains far too low for practical a… ▽ More Among several well-known transition metal-based compounds, the van der Waals (vdW) Fe3-xGeTe2 (FGT) magnet is a strong candidate for use in two-dimensional (2D) magnetic devices due to its strong perpendicular magnetic anisotropy, sizeable Curie temperature (TC ~ 154 K), and versatile magnetic character that is retained in the low-dimensional limit. While the TC remains far too low for practical applications, there has been a successful push toward improving it via external driving forces such as pressure, irradiation, and do**. Here we present experimental evidence of a novel room-temperature (RT) ferromagnetic phase induced by the electrochemical intercalation of common tetrabutylammonium cations (TBA+) into FGT bulk crystals. We obtained Curie temperatures as high as 350 K with chemical and physical stability of the intercalated compound. The temperature-dependent Raman measurements in combination with vdW-corrected ab initio calculations suggest that charge transfer (electron do**) upon intercalation could lead to the observation of RT ferromagnetism. This work demonstrates that molecular intercalation is a viable route in realizing high-temperature vdW magnets in an inexpensive and reliable manner. △ Less

Submitted 17 September, 2022; originally announced September 2022.

Fabrication of uniformly doped graphene quantum Hall arrays with multiple quantized resistance outputs

Authors: Swapnil M. Mhatre, Ngoc Thanh Mai Tran, Heather M. Hill, Ching-Chen Yeh, Dipanjan Saha, David B. Newell, Angela R. Hight Walker, Chi-Te Liang, Randolph E. Elmquist, Albert F. Rigosi

Abstract: In this work, limiting factors for develo** metrologically useful arrays from epitaxial graphene on SiC are lifted with a combination of centimeter-scale, high-quality material growth and the implementation of superconducting contacts. Standard devices for metrology have been restricted to having a single quantized value output based on the $ν$ = 2 Landau level. With the demonstrations herein of… ▽ More In this work, limiting factors for develo** metrologically useful arrays from epitaxial graphene on SiC are lifted with a combination of centimeter-scale, high-quality material growth and the implementation of superconducting contacts. Standard devices for metrology have been restricted to having a single quantized value output based on the $ν$ = 2 Landau level. With the demonstrations herein of devices having multiple outputs of quantized values available simultaneously, these versatile devices can be used to disseminate the ohm globally. Such devices are designed to give access to quantized resistance values over the range of three orders of magnitude, starting as low as the standard value of approximately 12.9 k$Ω$ and reaching as high as 1.29 M$Ω$. Several experimental methods are used to assess the quality and versatility of the devices, including standard lock-in techniques and Raman spectroscopy. △ Less

Submitted 10 June, 2022; originally announced June 2022.

Timescales for Nitric Acid Desorption in Epitaxial Graphene Devices

Authors: Swapnil M. Mhatre, Ngoc Thanh Mai Tran, Heather M. Hill, Dipanjan Saha, Angela R. Hight Walker, Chi-Te Liang, Randolph E. Elmquist, David B. Newell, Albert F. Rigosi

Abstract: This work reports the dynamics of transient hole do** in epitaxial graphene devices by using nitric acid as an adsorbent. The timescales associated with corresponding desorption processes are extracted from the data. The understanding of reversible hole do** without gating is of crucial importance to those fabricating devices with a particular functionality. Measurements of the electrical and… ▽ More This work reports the dynamics of transient hole do** in epitaxial graphene devices by using nitric acid as an adsorbent. The timescales associated with corresponding desorption processes are extracted from the data. The understanding of reversible hole do** without gating is of crucial importance to those fabricating devices with a particular functionality. Measurements of the electrical and optical properties of several devices post-exposure were performed with transport temperatures between 300 K and 1.5 K. Ambient conditions are applied to non-transport measurements to replicate the most likely laboratory conditions for handling devices using this do** method. The relevant timescales from transport measurements are compared with results from Raman spectroscopy measurements. △ Less

Submitted 15 April, 2022; originally announced April 2022.

Nonconventional Quantized Hall Resistances Obtained with $ν= 2$ Equilibration in Epitaxial Graphene $p-n$ Junctions

Authors: Albert F. Rigosi, Dinesh Patel, Martina Marzano, Mattias Kruskopf, Heather M. Hill, Hanbyul **, Jiuning Hu, Angela R. Hight Walker, Massimo Ortolano, Luca Callegaro, Chi-Te Liang, David B. Newell

Abstract: We have demonstrated the millimeter-scale fabrication of monolayer epitaxial graphene $p-n$ junction devices using simple ultraviolet photolithography, thereby significantly reducing device processing time compared to that of electron beam lithography typically used for obtaining sharp junctions. This work presents measurements yielding nonconventional, fractional multiples of the typical quantize… ▽ More We have demonstrated the millimeter-scale fabrication of monolayer epitaxial graphene $p-n$ junction devices using simple ultraviolet photolithography, thereby significantly reducing device processing time compared to that of electron beam lithography typically used for obtaining sharp junctions. This work presents measurements yielding nonconventional, fractional multiples of the typical quantized Hall resistance at $ν=2$ ($R_H\approx 12906 Ω$) that take the form: $\frac{a}{b}R_H$. Here, $a$ and $b$ have been observed to take on values such 1, 2, 3, and 5 to form various coefficients of $R_H$. Additionally, we provide a framework for exploring future device configurations using the LTspice circuit simulator as a guide to understand the abundance of available fractions one may be able to measure. These results support the potential for drastically simplifying device processing time and may be used for many other two-dimensional materials. △ Less

Submitted 24 January, 2022; originally announced January 2022.

Review of Theoretical and Computational Methods for 2D Materials Exhibiting Charge Density Waves

Authors: Sugata Chowdhury, Heather M. Hill, Albert F. Rigosi, Patrick M. Vora, Angela R. Hight Walker, Francesca Tavazza

Abstract: Two-dimensional (2D) materials that exhibit charge density waves (CDWs) have generated many research endeavors in the hopes of employing their exotic properties for various quantum-based technologies. Early investigations surrounding CDWs were mostly focused on bulk materials. However, applications for quantum devices have since required devices to be constructed from few-layer material to fully u… ▽ More Two-dimensional (2D) materials that exhibit charge density waves (CDWs) have generated many research endeavors in the hopes of employing their exotic properties for various quantum-based technologies. Early investigations surrounding CDWs were mostly focused on bulk materials. However, applications for quantum devices have since required devices to be constructed from few-layer material to fully utilize the material's properties. This field has greatly expanded over the decades, warranting a focus on the computational efforts surrounding CDWs in 2D materials. In this review, we will cover ground in the following relevant, theory-driven subtopics for TaS2 and TaSe2: summary of general computational techniques and methods, atomic structures, Raman modes, and effects of confinement and dimensionality. Through understanding how the computational methods have enabled incredible advancements in quantum materials, one may anticipate the ever-expanding directions available for continued pursuit as the field brings us through the 21st century. △ Less

Submitted 17 January, 2022; originally announced January 2022.

Analysis of Raman and Ellipsometric Responses of Nb$_{x}$W$_{1-x}$Se$_{2}$ alloys

Authors: Albert F. Rigosi, Heather M. Hill, Sergiy Krylyuk, Nhan V. Nguyen, Angela R. Hight Walker, Albert V. Davydov, David B. Newell

Abstract: The growth of transition metal dichalcogenide (TMDC) alloys provides an opportunity to experimentally access information elucidating how optical properties change with gradual substitutions in the lattice compared with their pure compositions. In this work, we performed growths of alloyed crystals with stoichiometric compositions between pure forms of NbSe2 and WSe2, followed by an optical analysi… ▽ More The growth of transition metal dichalcogenide (TMDC) alloys provides an opportunity to experimentally access information elucidating how optical properties change with gradual substitutions in the lattice compared with their pure compositions. In this work, we performed growths of alloyed crystals with stoichiometric compositions between pure forms of NbSe2 and WSe2, followed by an optical analysis of those alloys by utilizing Raman spectroscopy and spectroscopic ellipsometry. △ Less

Submitted 24 December, 2021; originally announced December 2021.

Bonding characteristics of the interfacial buffer layer in epitaxial graphene via density functional theory

Authors: Alana Okullo, Heather M. Hill, Albert F. Rigosi, Angela R. Hight Walker, Francesca Tavazza, Sugata Chowdhury

Abstract: Monolayer epitaxial graphene is an appropriate candidate for a wide variety of electronic and optical applications. One advantage of growing graphene on the Si face of SiC is that it develops as a single crystal, as does the layer underneath, commonly referred to as the interfacial buffer layer. The properties of this supporting layer include a band gap, making it of interest to groups seeking to… ▽ More Monolayer epitaxial graphene is an appropriate candidate for a wide variety of electronic and optical applications. One advantage of growing graphene on the Si face of SiC is that it develops as a single crystal, as does the layer underneath, commonly referred to as the interfacial buffer layer. The properties of this supporting layer include a band gap, making it of interest to groups seeking to build devices with on-off capabilities. In this work, using density functional theory, we have calculated the bonding characteristics of the buffer layer to the SiC substrate beneath. These calculations were used to determine a periodic length between the covalent bonds acting as anchor points in this interface. Additionally, it is evident that the formation of these anchor points depends on the lattice mismatch between the graphene layer and SiC. △ Less

Submitted 7 December, 2021; originally announced December 2021.

Examining Experimental Raman Mode Behavior in Mono- and Bi-layer 2H-TaSe$_{2}$ via Density Functional Theory

Authors: Sugata Chowdhury, Heather M. Hill, Albert F. Rigosi, Andrew Briggs, Helmuth Berger, David B. Newell, Angela R. Hight Walker, Francesca Tavazza

Abstract: Tantalum diselenide (TaSe$_{2}$) is a metallic transition metal dichalcogenide whose equilibrium structure and vibrational behavior strongly depends on temperature and thickness, including the emergence of charge density wave (CDW) states at very low T. In this work, observed modes for mono- and bi-layer are described across several spectral regions and com-pared to the bulk ones. Such modes, incl… ▽ More Tantalum diselenide (TaSe$_{2}$) is a metallic transition metal dichalcogenide whose equilibrium structure and vibrational behavior strongly depends on temperature and thickness, including the emergence of charge density wave (CDW) states at very low T. In this work, observed modes for mono- and bi-layer are described across several spectral regions and com-pared to the bulk ones. Such modes, including an experimentally observed forbidden Raman mode and low frequency CDW modes, are then matched to corresponding density functional theory (DFT) predicted vibrations, to unveil their inner working. The excellent match between experimental and computational results justifies the presented vibrational visualizations of these modes. Additional support is provided by experimental phonons seen in Raman spectra as a function of temperature and thickness. These results highlight the importance of understanding interlayer interactions and their effects on mode behaviors. △ Less

Submitted 5 December, 2020; originally announced December 2020.

Comments: arXiv admin note: substantial text overlap with arXiv:2005.11350

Magnon-phonon hybridization in quasi-2D antiferromagnet MnPSe$_3$

Authors: Thuc T. Mai, K. F. Garrity, A. McCreary, J. Argo, J. R. Simpson, V. Doan-Nguyen, R. Valdes Aguilar, A. R. Hight Walker

Abstract: Magnetic excitations in van der Waals (vdW) materials, especially in the two-dimensional (2D) limit, are an exciting research topic from both the fundamental and applied perspectives. Using temperature-dependent, magneto-Raman spectroscopy, we identify the hybridization of two-magnon excitations with two separate E$_\mathrm{g}$ phonons in MnPSe$_3$, a magnetic vdW material that could potentially h… ▽ More Magnetic excitations in van der Waals (vdW) materials, especially in the two-dimensional (2D) limit, are an exciting research topic from both the fundamental and applied perspectives. Using temperature-dependent, magneto-Raman spectroscopy, we identify the hybridization of two-magnon excitations with two separate E$_\mathrm{g}$ phonons in MnPSe$_3$, a magnetic vdW material that could potentially host 2D antiferromagnetism. Results from first principles calculations of the phonon and magnon spectra further support our identification. The Raman spectra's rich temperature dependence through the magnetic transition displays an avoided-crossing behavior in the phonons' frequency and a concurrent decrease in their lifetimes. We construct a model based on the interaction between a discrete level and a continuum that reproduces these observations. The strong magnon-phonon hybridization reported here highlights the need to understand its effects on spin transport experiments in magnetic vdW materials. △ Less

Submitted 9 December, 2020; v1 submitted 25 November, 2020; originally announced November 2020.

The Joint Automated Repository for Various Integrated Simulations (JARVIS) for data-driven materials design

Authors: Kamal Choudhary, Kevin F. Garrity, Andrew C. E. Reid, Brian DeCost, Adam J. Biacchi, Angela R. Hight Walker, Zachary Trautt, Jason Hattrick-Simpers, A. Gilad Kusne, Andrea Centrone, Albert Davydov, Jie Jiang, Ruth Pachter, Gowoon Cheon, Evan Reed, Ankit Agrawal, Xiaofeng Qian, Vinit Sharma, Houlong Zhuang, Sergei V. Kalinin, Bobby G. Sumpter, Ghanshyam Pilania, Pinar Acar, Subhasish Mandal, Kristjan Haule , et al. (3 additional authors not shown)

Abstract: The Joint Automated Repository for Various Integrated Simulations (JARVIS) is an integrated infrastructure to accelerate materials discovery and design using density functional theory (DFT), classical force-fields (FF), and machine learning (ML) techniques. JARVIS is motivated by the Materials Genome Initiative (MGI) principles of develo** open-access databases and tools to reduce the cost and d… ▽ More The Joint Automated Repository for Various Integrated Simulations (JARVIS) is an integrated infrastructure to accelerate materials discovery and design using density functional theory (DFT), classical force-fields (FF), and machine learning (ML) techniques. JARVIS is motivated by the Materials Genome Initiative (MGI) principles of develo** open-access databases and tools to reduce the cost and development time of materials discovery, optimization, and deployment. The major features of JARVIS are: JARVIS-DFT, JARVIS-FF, JARVIS-ML, and JARVIS-Tools. To date, JARVIS consists of 40,000 materials and 1 million calculated properties in JARVIS-DFT, 1,500 materials and 110 force-fields in JARVIS-FF, and 25 ML models for material-property predictions in JARVIS-ML, all of which are continuously expanding. JARVIS-Tools provides scripts and workflows for running and analyzing various simulations. We compare our computational data to experiments or high-fidelity computational methods wherever applicable to evaluate error/uncertainty in predictions. In addition to the existing workflows, the infrastructure can support a wide variety of other technologically important applications as part of the data-driven materials design paradigm. The JARVIS datasets and tools are publicly available at the website: https://jarvis.nist.gov . △ Less

Submitted 11 July, 2021; v1 submitted 3 July, 2020; originally announced July 2020.

Influence of Dimensionality on the Charge Density Wave Phase of 2H-TaSe$_{2}$

Authors: Sugata Chowdhury, Albert F. Rigosi, Heather M. Hill, Andrew Briggs, David B. Newell, Helmuth Berger, Angela R. Hight Walker, Francesca Tavazza

Abstract: Metallic transition metal dichalcogenides like tantalum diselenide (TaSe$_{2}$) exhibit exciting behaviors at low temperatures, including the emergence of charge density wave (CDW) states. In this work, density functional theory (DFT) is used to investigate how structural, electronic, and Raman spectral properties of the CDW configuration change as a function of thickness. Such findings highlight… ▽ More Metallic transition metal dichalcogenides like tantalum diselenide (TaSe$_{2}$) exhibit exciting behaviors at low temperatures, including the emergence of charge density wave (CDW) states. In this work, density functional theory (DFT) is used to investigate how structural, electronic, and Raman spectral properties of the CDW configuration change as a function of thickness. Such findings highlight the influence of dimensionality change (from 2D to 3D) and van der Waals (vdW) interactions on the system properties. The vdW effect is most strongly present in bulk TaSe$_{2}$ in the spectral range 165 cm$^{-1}$ to 215 cm$^{-1}$. The phonons seen in the experimental Raman spectra are compared with the results calculated from the DFT models as a function of temperature and layer number. The matching of data and calculations substantiates the model's description of the CDW structural formation as a function of thickness, which is shown in depth for 1L through 6L systems. These results highlight the importance of understanding interlayer interactions, which are pervasive in many quantum phenomena involving two-dimensional confinement. △ Less

Submitted 20 August, 2021; v1 submitted 22 May, 2020; originally announced May 2020.

Comments: 6 figures, 28 pages

Distinct magneto-Raman signatures of spin-flip phase transitions in CrI3

Authors: Amber McCreary, Thuc T. Mai, Franz G. Utermohlen, Jeffrey R. Simpson, Kevin F. Garrity, Xiaozhou Feng, Dmitry Shcherbakov, Yanglin Zhu, ** Hu, Daniel Weber, Kenji Watanabe, Takashi Taniguchi, Joshua E. Goldberger, Zhiqiang Mao, Chun Ning Lau, Yuanming Lu, Nandini Trivedi, Rolando Valdés Aguilar, Angela R. Hight Walker

Abstract: The discovery of 2-dimensional (2D) materials, such as CrI3, that retain magnetic ordering at monolayer thickness has resulted in a surge of research in 2D magnetism from both pure and applied perspectives. Here, we report a magneto-Raman spectroscopy study on multilayered CrI3, focusing on two new features in the spectra which appear at temperatures below the magnetic ordering temperature and wer… ▽ More The discovery of 2-dimensional (2D) materials, such as CrI3, that retain magnetic ordering at monolayer thickness has resulted in a surge of research in 2D magnetism from both pure and applied perspectives. Here, we report a magneto-Raman spectroscopy study on multilayered CrI3, focusing on two new features in the spectra which appear at temperatures below the magnetic ordering temperature and were previously assigned to high frequency magnons. We observe a striking evolution of the Raman spectra with increasing magnetic field in which clear, sudden changes in intensities of the modes are attributed to the interlayer ordering changing from antiferromagnetic to ferromagnetic at a critical magnetic field. Our work highlights the sensitivity of the Raman modes to weak interlayer spin ordering in CrI3. In addition, we theoretically examine potential origins for the new modes, which we deduce are unlikely single magnons. △ Less

Submitted 6 April, 2020; v1 submitted 2 October, 2019; originally announced October 2019.

High-throughput Density Functional Perturbation Theory and Machine Learning Predictions of Infrared, Piezoelectric and Dielectric Responses

Authors: Kamal Choudhary, Kevin F. Garrity, Vinit Sharma, Adam J. Biacchi, Angela R. Hight Walker, Francesca Tavazza

Abstract: Many technological applications depend on the response of materials to electric fields, but available databases of such responses are limited. Here, we explore the infrared, piezoelectric and dielectric properties of inorganic materials by combining high-throughput density functional perturbation theory and machine learning approaches. We compute Γ-point phonons, infrared intensities, Born-effecti… ▽ More Many technological applications depend on the response of materials to electric fields, but available databases of such responses are limited. Here, we explore the infrared, piezoelectric and dielectric properties of inorganic materials by combining high-throughput density functional perturbation theory and machine learning approaches. We compute Γ-point phonons, infrared intensities, Born-effective charges, piezoelectric, and dielectric tensors for 5015 non-metallic materials in the JARVIS-DFT database. We find 3230 and 1943 materials with at least one far and mid-infrared mode, respectively. We identify 577 high-piezoelectric materials, using a threshold of 0.5 C/m2. Using a threshold of 20, we find 593 potential high-dielectric materials. Importantly, we analyze the chemistry, symmetry, dimensionality, and geometry of the materials to find features that help explain variations in our datasets. Finally, we develop high-accuracy regression models for the highest infrared frequency and maximum Born-effective charges, and classification models for maximum piezoelectric and average dielectric tensors to accelerate discovery. △ Less

Submitted 29 February, 2020; v1 submitted 2 October, 2019; originally announced October 2019.

Journal ref: npj Computational Materials, 6, 64 (2020)

Polarization-resolved Raman spectroscopy of α-RuCl3 and evidence of room temperature two-dimensional magnetic scattering

Authors: Thuc T. Mai, A. McCreary, P. Lampen-Kelley, N. Butch, J. R. Simpson, J. -Q. Yan, S. E. Nagler, D. Mandrus, A. R. Hight Walker, R. Valdes Aguilar

Abstract: Polarization-resolved Raman spectroscopy was performed and analyzed from large, high quality, mono-domain single crystal of α-RuCl3, a proximate Kitaev quantum spin liquid. Spectra were collected with laser polarizations parallel and perpendicular to the honeycomb plane. Pairs of nearly degenerate phonons were discovered and show either a 4-fold or 2-fold polarization angle dependence in their Ram… ▽ More Polarization-resolved Raman spectroscopy was performed and analyzed from large, high quality, mono-domain single crystal of α-RuCl3, a proximate Kitaev quantum spin liquid. Spectra were collected with laser polarizations parallel and perpendicular to the honeycomb plane. Pairs of nearly degenerate phonons were discovered and show either a 4-fold or 2-fold polarization angle dependence in their Raman intensity, thereby providing evidence to definitively assign the bulk crystal point group as C2h. The low frequency continuum that is often attributed to scattering from pairs of Majorana fermions was also examined and found to disappear when the laser excitation and scattered photon polarizations were perpendicular to the honeycomb plane. This disappearance, along with the behavior of the phonon spectrum in the same polarization configuration, strongly suggests that the scattering continuum is 2-dimensional. We argue that this scattering continuum originates from the Kitaev magnetic interactions that survives up to room temperature, a scale larger than the bare Kitaev exchange energy of approximately 50 K. △ Less

Submitted 2 August, 2019; originally announced August 2019.

Comments: 8 pages, 5 figures

Journal ref: Phys. Rev. B 100, 134419 (2019)

Quasi-Two-Dimensional Magnon Identification in Antiferromagnetic FePS3 via Magneto-Raman Spectroscopy

Authors: Amber McCreary, Jeffrey R. Simpson, Thuc T. Mai, Robert D. McMichael, Jason E. Douglas, Nicholas Butch, Cindi Dennis, Rolando Valdes Aguilar, Angela R. Hight Walker

Abstract: Recently it was discovered that van der Waals-bonded magnetic materials retain long range magnetic ordering down to a single layer, opening many avenues in fundamental physics and potential applications of these fascinating materials. One such material is FePS3, a large spin (S=2) Mott insulator where the Fe atoms form a honeycomb lattice. In the bulk, FePS3 has been shown to be a quasi-two-dimens… ▽ More Recently it was discovered that van der Waals-bonded magnetic materials retain long range magnetic ordering down to a single layer, opening many avenues in fundamental physics and potential applications of these fascinating materials. One such material is FePS3, a large spin (S=2) Mott insulator where the Fe atoms form a honeycomb lattice. In the bulk, FePS3 has been shown to be a quasi-two-dimensional-Ising antiferromagnet, with additional features in the Raman spectra emerging below the Neel temperature of approximately 120 K. Using magneto-Raman spectroscopy as an optical probe of magnetic structure, we show that one of these Raman-active modes in the magnetically ordered state is actually a magnon with a frequency of of approximately 3.7 THz (122 cm-1). Contrary to previous work, which interpreted this feature as a phonon, our Raman data shows the expected frequency shifting and splitting of the magnon as a function of temperature and magnetic field, respectively, where we determine the g-factor to be approximately 2. In addition, the symmetry behavior of the magnon is studied by polarization-dependent Raman spectroscopy and explained using the magnetic point group of FePS3. △ Less

Submitted 1 August, 2019; originally announced August 2019.

Journal ref: Phys. Rev. B 101, 064416 (2020)

Global alignment of solution-based single-wall carbon nanotube films via machine-vision controlled filtration

Authors: Joshua S. Walker, Jeffrey A. Fagan, Adam J. Biacchi, Valerie A. Kuehl, Thomas A. Searles, Angela R. Hight Walker, William D. Rice

Abstract: Over the past decade, substantial progress has been made in the chemical processing (chiral enrichment, length sorting, handedness selectivity, and filling substance) of single-wall carbon nanotubes (SWCNTs). Recently, it was shown that large, horizontally-aligned films can be created out of post-processed SWCNT solutions. Here, we use machine-vision automation and parallelization to simultaneousl… ▽ More Over the past decade, substantial progress has been made in the chemical processing (chiral enrichment, length sorting, handedness selectivity, and filling substance) of single-wall carbon nanotubes (SWCNTs). Recently, it was shown that large, horizontally-aligned films can be created out of post-processed SWCNT solutions. Here, we use machine-vision automation and parallelization to simultaneously produce globally-aligned SWCNT films using pressure-driven filtration. Feedback control enables filtration to occur with a constant flow rate that not only improves the nematic ordering of the SWCNT films, but also provides the ability to align a wide range of SWCNT types and on a variety of nanoporous membranes using the same filtration parameters. Using polarized optical spectroscopic techniques, we show that meniscus combing produces a two-dimensional radial SWCNT alignment on one side of the film. After we flatten the meniscus through silanation, spatially-resolved nematicity maps on both sides of the SWCNT film reveal global alignment across the entire structure. From experiments changing ionic strength and membrane tribocharging, we provide evidence that the SWCNT alignment mechanism stems from an interplay of intertube interactions and ordered membrane charging. This work opens up the possibility of creating globally-aligned SWCNT film structures for a new-generation of nanotube electronics and optical control elements. △ Less

Submitted 22 July, 2019; originally announced July 2019.

Comments: 10 pages, 4 figures; SI: 13 pages, 9 figures; 4 pages references

Strain Controlled Magnetic and Optical Properties of Monolayer 2H-TaSe$_2$

Authors: Sugata Chowdhury, Jeffrey R. Simpson, T. L. Einstein, Angela R. Hight Walker

Abstract: First-principles calculations are used to probe the effects of mechanical strain on the magnetic and optical properties of monolayer (ML) 2H-TaSe$_2$. A complex dependence of these physical properties on strain results in unexpected behavior, such as ferromagnetism under uniaxial, in-plane, tensile strain and a lifting of the Raman-active E' phonon degeneracy. While ferromagnetism is observed unde… ▽ More First-principles calculations are used to probe the effects of mechanical strain on the magnetic and optical properties of monolayer (ML) 2H-TaSe$_2$. A complex dependence of these physical properties on strain results in unexpected behavior, such as ferromagnetism under uniaxial, in-plane, tensile strain and a lifting of the Raman-active E' phonon degeneracy. While ferromagnetism is observed under compression along x-axis and expansion along y-axis, no magnetic order occurs when interchanging the strain direction. The calculations show that the magnetic behavior of the system depends on the exchange within the 5d orbitals of the Ta atoms. The magnetic moment per Ta atom persists even when an additional compressive strain along the z-axis is added to a biaxially-strained ML, which suggests stability of the magnetic order. Exploring the effects of this mechanical strain on the Raman-active phonon modes, we find that the E$^"$ and E' modes are red-shifted due to Ta-Se bond elongation, and that strain lifts the E' mode degeneracy, except for the symmetrical biaxial tensile case. Our results demonstrate the possibility of tuning the properties of 2D-materials for nanoelectronic applications through strain. △ Less

Submitted 23 December, 2018; originally announced December 2018.

Comments: 14 pages, 6 figs

Journal ref: Phys. Rev. Materials 3, 084004 (2019)

Phase Modulators Based on High Mobility Ambipolar ReSe2 Field-Effect Transistors

Authors: Nihar R. Pradhan, Carlos Garcia, Bridget Isenberg, Daniel Rhodes, Simin Feng, Shahriar Memaran, Yan Xin, Amber McCreary, Angela R. Hight Walker, Aldo Raeliarijaona, Humberto Terrones, Mauricio Terrones, Stephen McGill, Luis Balicas

Abstract: We fabricated ambipolar field-effect transistors (FETs) from multi-layered triclinic ReSe2, mechanically exfoliated onto a SiO2 layer grown on p-doped Si. In contrast to previous reports on thin layers (~2 to 3 layers), we extract field-effect carrier mobilities in excess of 10^2 cm^2/Vs at room temperature in crystals with nearly ~10 atomic layers. These thicker FETs also show nearly zero thresho… ▽ More We fabricated ambipolar field-effect transistors (FETs) from multi-layered triclinic ReSe2, mechanically exfoliated onto a SiO2 layer grown on p-doped Si. In contrast to previous reports on thin layers (~2 to 3 layers), we extract field-effect carrier mobilities in excess of 10^2 cm^2/Vs at room temperature in crystals with nearly ~10 atomic layers. These thicker FETs also show nearly zero threshold gate voltage for conduction and high ON to OFF current ratios when compared to the FETs built from thinner layers. We also demonstrate that it is possible to utilize this ambipolarity to fabricate logical elements or digital synthesizers. For instance, we demonstrate that one can produce simple, gate-voltage tunable phase modulators with the ability to shift the phase of the input signal by either 90^o or nearly 180^o. Given that it is possible to engineer these same elements with improved architectures, for example on h-BN in order to decrease the threshold gate voltage and increase the carrier mobilities, it is possible to improve their characteristics in order to engineer ultra-thin layered logic elements based on ReSe2. △ Less

Submitted 10 August, 2018; originally announced August 2018.

Comments: Scientific Reports 2018

Journal ref: Scientific Reports (2018)

Confocal laser scanning microscopy: A tool for rapid optical characterization of 2D materials

Authors: Vishal Panchal, Yanfei Yang, Guangjun Cheng, Jiuning Hu, Mattias Kruskopf, Chieh-I Liu, Albert F. Rigosi, Christos Melios, Angela R. Hight Walker, David B. Newell, Olga Kazakova, Randolph E. Elmquist

Abstract: Confocal laser scanning microscopy (CLSM) is a non-destructive, highly-efficient optical characterization method for large-area analysis of graphene on different substrates, which can be applied in ambient air, does not require additional sample preparation, and is insusceptible to surface charging and surface contamination. CLSM leverages optical properties of graphene and provides greatly enhanc… ▽ More Confocal laser scanning microscopy (CLSM) is a non-destructive, highly-efficient optical characterization method for large-area analysis of graphene on different substrates, which can be applied in ambient air, does not require additional sample preparation, and is insusceptible to surface charging and surface contamination. CLSM leverages optical properties of graphene and provides greatly enhanced optical contrast and map** of thickness down to a single layer. We demonstrate the effectiveness of CLSM by measuring mechanically exfoliated and chemical vapor deposition graphene on Si/SiO2, and epitaxial graphene on SiC. In the case of graphene on Si/SiO2, both CLSM intensity and height map** is powerful for analysis of 1-5 layers of graphene. For epitaxial graphene on SiC substrates, the CLSM intensity allows us to distinguish features such as dense, parallel 150 nm wide ribbons of graphene (associated with the early stages of the growth process) and large regions covered by the interfacial layer and 1-3 layers of graphene. In both cases, CLSM data shows excellent correlation with conventional optical microscopy, atomic force microscopy, Kelvin probe force microscopy, conductive atomic force microscopy, scanning electron microscopy and Raman map**, with a greatly reduced acquisition time. We demonstrate that CLSM is an indispensable tool for rapid analysis of mass-produced graphene and is equally relevant to other 2D materials. △ Less

Submitted 12 April, 2018; originally announced April 2018.

Comments: 4 Figures

High-throughput assessment of vacancy formation and surface energies of materials using classical force-fields

Authors: Kamal Choudhary, Adam J. Biacchi, Supriyo Ghosh, Lucas Hale, Angela R. Hight Walker, Francesca Tavazza

Abstract: In this work, we present an open access database for surface and vacancy-formation energies using classical force-fields (FFs). These quantities are essential in understanding diffusion behavior, nanoparticle formation and catalytic activities. FFs are often designed for a specific application, hence, this database allows the user to understand whether a FF is suitable for investigating particular… ▽ More In this work, we present an open access database for surface and vacancy-formation energies using classical force-fields (FFs). These quantities are essential in understanding diffusion behavior, nanoparticle formation and catalytic activities. FFs are often designed for a specific application, hence, this database allows the user to understand whether a FF is suitable for investigating particular defect and surface-related material properties. The FF results are compared to density functional theory and experimental data whenever applicable for validation. At present, we have 17,506 surface energies and 1,000 vacancy formation energies calculation in our database and the database is still growing. All the data generated, and the computational tools used, are shared publicly at the following websites https://www.ctcms.nist.gov/~knc6/periodic.html, https://jarvis.nist.gov and https://github.com/usnistgov/jarvis . Approximations used during the high-throughput calculations are clearly mentioned. Using some of the example cases, we show how our data can be used to directly compare different FFs for a material and to interpret experimental findings such as using Wulff construction for predicting equilibrium shape of nanoparticles. Similarly, the vacancy formation energies data can be useful in understanding diffusion related properties. △ Less

Submitted 9 October, 2018; v1 submitted 3 April, 2018; originally announced April 2018.

Rapid characterization of wafer-scale 2D material: Epitaxial graphene and graphene nanoribbons on SiC

Authors: Vishal Panchal, Yanfei Yang, Guangjun Cheng, Jiuning Hu, Chieh-I Liu, Albert F. Rigosi, Christos Melios, Olga Kazakova, Angela R. Hight Walker, David B. Newell, Randolph E. Elmquist

Abstract: We demonstrate that the confocal laser scanning microscopy (CLSM) provides a non-destructive, highly-efficient characterization method for large-area epitaxial graphene and graphene nanostructures on SiC substrates, which can be applied in ambient air without sample preparation and is insusceptible to surface charging or surface contamination. Based on the variation of reflected intensity from reg… ▽ More We demonstrate that the confocal laser scanning microscopy (CLSM) provides a non-destructive, highly-efficient characterization method for large-area epitaxial graphene and graphene nanostructures on SiC substrates, which can be applied in ambient air without sample preparation and is insusceptible to surface charging or surface contamination. Based on the variation of reflected intensity from regions covered by interfacial layer, single layer, bilayer, or few layer graphene, and through the correlation to the results from Raman spectroscopy and SPM, CLSM images with a high resolution (around 150 nm) reveal that the intensity contrast has distinct feature for undergrown graphene (mixing of dense, parallel graphene nanoribbons and interfacial layer), continuous graphene, and overgrown graphene. Moreover, CLSM has a real acquisition time hundreds of times faster per unit area than the supplementary characterization methods. We believe that the confocal laser scanning microscope will be an indispensable tool for mass-produced epitaxial graphene or applicable 2D materials. △ Less

Submitted 9 November, 2017; originally announced November 2017.

Epitaxial graphene homogeneity and quantum Hall effect in millimeter-scale devices

Authors: Yanfei Yang, Guangjun Cheng, Patrick Mende, Irene G. Calizo, Randall M. Feenstra, Chiashain Chuang, Chieh-Wen Liu, Chieh-I Liu, George R. Jones, Angela R. Hight Walker, Randolph E. Elmquist

Abstract: Quantized magnetotransport is observed in 5.6 x 5.6 mm^2 epitaxial graphene devices, grown using highly constrained sublimation on the Si-face of SiC(0001) at high temperature (1900 °C). The precise quantized Hall resistance of Rxy = h/2e^2 is maintained up to record level of critical current Ixx = 0.72 mA at T = 3.1 K and 9 T in a device where Raman microscopy reveals low and homogeneous strain.… ▽ More Quantized magnetotransport is observed in 5.6 x 5.6 mm^2 epitaxial graphene devices, grown using highly constrained sublimation on the Si-face of SiC(0001) at high temperature (1900 °C). The precise quantized Hall resistance of Rxy = h/2e^2 is maintained up to record level of critical current Ixx = 0.72 mA at T = 3.1 K and 9 T in a device where Raman microscopy reveals low and homogeneous strain. Adsorption-induced molecular do** in a second device reduced the carrier concentration close to the Dirac point(n ~ 1E10 (1/cm^2)), where mobility of 43700 cm^2/Vs is measured over an area of 10 mm^2. Atomic force, confocal optical, and Raman microscopies are used to characterize the large-scale devices, and reveal improved SiC terrace topography and the structure of the graphene layer. Our results show that the structural uniformity of epitaxial graphene produced by face-to-graphite processing contributes to millimeter-scale transport homogeneity, and will prove useful for scientific and commercial applications. △ Less

Submitted 24 June, 2016; originally announced June 2016.

Metal to insulator quantum-phase transition in few-layered ReS$_2$

Authors: Nihar R. Pradhan, Amber McCreary, Daniel Rhodes, Zhengguang Lu, Simin Feng, Efstratios Manousakis, Dmitry Smirnov, Raju Namburu, Madan Dubey, Angela R. Hight Walker, Humberto Terrones, Mauricio Terrones, Vladimir Dobrosavljevic, Luis Balicas

Abstract: In ReS$_2$ a layer-independent direct band-gap of 1.5 eV implies a potential for its use in optoelectronic applications. ReS$_2$ crystallizes in the 1T$^{\prime}$-structure which leads to anisotropic physical properties and whose concomitant electronic structure might host a non-trivial topology. Here, we report an overall evaluation of the anisotropic Raman response and the transport properties o… ▽ More In ReS$_2$ a layer-independent direct band-gap of 1.5 eV implies a potential for its use in optoelectronic applications. ReS$_2$ crystallizes in the 1T$^{\prime}$-structure which leads to anisotropic physical properties and whose concomitant electronic structure might host a non-trivial topology. Here, we report an overall evaluation of the anisotropic Raman response and the transport properties of few-layered ReS$_2$ field-effect transistors. We find that ReS$_2$ exfoliated on SiO$_2$ behaves as an $n$-type semiconductor with an intrinsic carrier mobility surpassing $μ_i$ ~30 cm$^2$/Vs at $T = 300$ K which increases up to ~350 cm$^2$/Vs at 2 K. Semiconducting behavior is observed at low electron densities $n$, but at high values of n the resistivity decreases by a factor > 7 upon cooling to 2 K and displays a metallic $T^2$-dependence. This indicates that the band structure of 1T$^{\prime}$-ReS$_2$ is quite susceptible to an electric field applied perpendicularly to the layers. The electric-field induced metallic state observed in transition metal dichalcogenides was recently claimed to result from a percolation type of transition. Instead, through a scaling analysis of the conductivity as a function of $T$ and $n$, we find that the metallic state of ReS$_2$ results from a second-order metal to insulator transition driven by electronic correlations. This gate-induced metallic state offers an alternative to phase engineering for producing ohmic contacts and metallic interconnects in devices based on transition metal dichalcogenides. △ Less

Submitted 7 October, 2015; originally announced October 2015.

Comments: 25 pages, 5 figures

Journal ref: Nano Lett. 15 , 8377 (2015)

High-Speed Coherent Raman Fingerprint Imaging of Biological Tissues

Authors: Charles H. Camp Jr., Young Jong Lee, John M. Heddleston, Christopher M. Hartshorn, Angela R. Hight Walker, Jeremy N. Rich, Justin D. Lathia, Marcus T. Cicerone

Abstract: We have developed a coherent Raman imaging platform using broadband coherent anti-Stokes Raman scattering (BCARS) that provides an unprecedented combination of speed, sensitivity, and spectral breadth. The system utilizes a unique configuration of laser sources that probes the Raman spectrum over 3,000 cm$^{-1}$ and generates an especially strong response in the typically weak Raman "fingerprint"… ▽ More We have developed a coherent Raman imaging platform using broadband coherent anti-Stokes Raman scattering (BCARS) that provides an unprecedented combination of speed, sensitivity, and spectral breadth. The system utilizes a unique configuration of laser sources that probes the Raman spectrum over 3,000 cm$^{-1}$ and generates an especially strong response in the typically weak Raman "fingerprint" region through heterodyne amplification of the anti-Stokes photons with a large nonresonant background (NRB) while maintaining high spectral resolution of $<$ 13 cm$^{-1}$. For histology and pathology, this system shows promise in highlighting major tissue components in a non-destructive, label-free manner. We demonstrate high-speed chemical imaging in two- and three-dimensional views of healthy murine liver and pancreas tissues and interfaces between xenograft brain tumors and the surrounding healthy brain matter. △ Less

Submitted 15 February, 2014; v1 submitted 13 February, 2014; originally announced February 2014.

Comments: 22 pages (11 main, 11 supplemental), 9 figures (4 main, 5 supplemental; N.B.: reduced resolution for smaller file size-- contact author for full resolution images). This paper was submitted to Nature Photonics on October 2, 2013 (minor corrections applied). This version concatenates the supplementary section to the end of the main text-- rather than a separate file-- No document changes otherwise

UV/Ozone treatment to reduce metal-graphene contact resistance

Authors: Wei Li, Yiran Liang, Dangmin Yu, Lianmao Peng, Kurt P. Pernstich, Tian Shen, A. R. Hight Walker, Guangjun Cheng, Christina A. Hacker, Curt A. Richter, Qiliang Li, David J. Gundlach, Xuelei Liang

Abstract: We report reduced contact resistance of single-layer graphene devices by using ultraviolet ozone (UVO) treatment to modify the metal/graphene contact interface. The devices were fabricated from mechanically transferred, chemical vapor deposition (CVD) grown, single layer graphene. UVO treatment of graphene in the contact regions as defined by photolithography and prior to metal deposition was foun… ▽ More We report reduced contact resistance of single-layer graphene devices by using ultraviolet ozone (UVO) treatment to modify the metal/graphene contact interface. The devices were fabricated from mechanically transferred, chemical vapor deposition (CVD) grown, single layer graphene. UVO treatment of graphene in the contact regions as defined by photolithography and prior to metal deposition was found to reduce interface contamination originating from incomplete removal of poly(methyl methacrylate) (PMMA) and photoresist. Our control experiment shows that exposure times up to 10 minutes did not introduce significant disorder in the graphene as characterized by Raman spectroscopy. By using the described approach, contact resistance of less than 200 Ω μm was achieved, while not significantly altering the electrical properties of the graphene channel region of devices. △ Less

Submitted 4 December, 2012; originally announced December 2012.

Comments: 17 pages, 5 figures

Fundamental Optical Processes in Armchair Carbon Nanotubes

Authors: E. H. Haroz, J. G. Duque, X. Tu, M. Zheng, A. R. Hight Walker, R. H. Hauge, S. K. Doorn, J. Kono

Abstract: We have used post-synthesis separation methods based on density gradient ultracentrifugation and DNA-based ion-exchange chromatography to produce aqueous suspensions strongly enriched in armchair nanotubes for spectroscopic studies. Through resonant Raman spectroscopy of the radial breathing mode phonons, we provide macroscopic and unambiguous evidence that density gradient ultracentrifugation can… ▽ More We have used post-synthesis separation methods based on density gradient ultracentrifugation and DNA-based ion-exchange chromatography to produce aqueous suspensions strongly enriched in armchair nanotubes for spectroscopic studies. Through resonant Raman spectroscopy of the radial breathing mode phonons, we provide macroscopic and unambiguous evidence that density gradient ultracentrifugation can enrich armchair nanotubes. Furthermore, using conventional, optical absorption spectroscopy in the near-infrared and visible range, we show that interband absorption in armchair nanotubes is strongly excitonic. Lastly, by examining the G-band mode in Raman spectra, we determine that observation of the broad, lower frequency (G^{-}) feature is a result of resonance with non-armchair "metallic" nanotubes. These findings regarding the fundamental optical absorption and scattering processes in metallic carbon nanotubes lay the foundation for further spectroscopic studies to probe many-body physical phenomena in one dimension. △ Less

Submitted 19 October, 2012; originally announced October 2012.

Comments: 29 pages, 17 figures

Journal ref: Nanoscale 5, 1411 (2013)

Length-dependent Raman spectroscopy of single-walled carbon nanotubes: the effect of dispersant on defects

Authors: J. R. Simpson, J. A. Fagan, M. L. Becker, E. K. Hobbie, A. R. Hight Walker

Abstract: We compare Raman spectra from aqueous suspensions of length-separated single-walled carbon nanotubes (SWCNTs) dispersed using either polymer adsorption of single-stranded DNA or miscelle encapsulation with sodium deoxycholate surfactant. The Raman spectral features, other than the D-band, increase monotonically with nanotube length in both dispersion schemes. The intensity ratio of the disorder-… ▽ More We compare Raman spectra from aqueous suspensions of length-separated single-walled carbon nanotubes (SWCNTs) dispersed using either polymer adsorption of single-stranded DNA or miscelle encapsulation with sodium deoxycholate surfactant. The Raman spectral features, other than the D-band, increase monotonically with nanotube length in both dispersion schemes. The intensity ratio of the disorder-induced D to G' Raman bands decays as a function of SWCNT length, proportional to 1/L, as expected for endcap defects. While the UV-vis absorption and fluorescence also increase with length for both dispersants, the fluorescence intensity is dramatically lower for DNA-wrapped SWCNTs of equal length. The similarities in the length-dependent D/G' ratios exclude defects as an explanation for the fluorescence decrease in DNA versus deoxycholate dispersions. △ Less

Submitted 2 November, 2008; originally announced November 2008.

Comments: 3 pages, 3 figures