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Orientation of hole quantum Hall nematic phases in an out-of-plane electric field
Authors:
A. F. Croxall,
F. Sfigakis,
J. Waldie,
I. Farrer,
D. A. Ritchie
Abstract:
We present observations of an anisotropic resistance state at Landau level filling factor $ν=5/2$ in a two-dimensional hole system (2DHS), which occurs for certain values of hole density $p$ and average out-of-plane electric field $E_\perp$. The 2DHS is induced by electric field effect in an undoped GaAs/AlGaAs quantum well, where front and back gates allow independent tuning of $p$ and $E_\perp$,…
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We present observations of an anisotropic resistance state at Landau level filling factor $ν=5/2$ in a two-dimensional hole system (2DHS), which occurs for certain values of hole density $p$ and average out-of-plane electric field $E_\perp$. The 2DHS is induced by electric field effect in an undoped GaAs/AlGaAs quantum well, where front and back gates allow independent tuning of $p$ and $E_\perp$, and hence the symmetry of the confining potential. For $p\approx2\times10^{11}$~cm$^{-2}$ and $E_\perp \approx -2 \times10^{5}$~V/m, the magnetoresistance along $\langle01\bar1\rangle$ greatly exceeds that along $\langle011\rangle$, suggesting the formation of a quantum Hall nematic or `stripe' phase. Reversing the sign of $E_\perp$ rotates the stripes by $90^{\circ}$. We suggest this behavior may arise from the mixing of the hole Landau levels and a combination of the Rashba and Dresselhaus spin-orbit coupling effects.
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Submitted 14 May, 2019; v1 submitted 7 March, 2019;
originally announced March 2019.
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A complete laboratory for transport studies of electron-hole interactions in GaAs/AlGaAs systems
Authors:
Ugo Siciliani de Cumis,
Joanna Waldie,
Andrew F. Croxall,
Deepyanti Taneja,
Justin Llandro,
Ian Farrer,
Harvey E. Beere,
David A. Ritchie
Abstract:
We present GaAs/AlGaAs double quantum well devices that can operate as both electron-hole (e-h) and hole-hole (h-h) bilayers, with separating barriers as narrow as 5 nm or 7.5 nm. With such narrow barriers, in the h-h configuration we observe signs of magnetic-field-induced exciton condensation in the quantum Hall bilayer regime. In the same devices we can study the zero-magnetic-field e-h and h-h…
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We present GaAs/AlGaAs double quantum well devices that can operate as both electron-hole (e-h) and hole-hole (h-h) bilayers, with separating barriers as narrow as 5 nm or 7.5 nm. With such narrow barriers, in the h-h configuration we observe signs of magnetic-field-induced exciton condensation in the quantum Hall bilayer regime. In the same devices we can study the zero-magnetic-field e-h and h-h bilayer states using Coulomb drag. Very strong e-h Coulomb drag resistivity (up to 10% of the single layer resistivity) is observed at liquid helium temperatures, but no definite signs of exciton condensation are seen in this case. Self-consistent calculations of the electron and hole wavefunctions show this might be because the average interlayer separation is larger in the e-h case than the h-h case.
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Submitted 27 November, 2016;
originally announced November 2016.
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Switching between attractive and repulsive Coulomb-interaction-mediated drag in an ambipolar GaAs/AlGaAs bilayer device
Authors:
B. Zheng,
A. F. Croxall,
J. Waldie,
K. Das Gupta,
F. Sfigakis,
I. Farrer,
H. E. Beere,
D. A. Ritchie
Abstract:
We present measurements of Coulomb drag in an ambipolar GaAs/AlGaAs double quantum well structure that can be configured as both an electron-hole bilayer and a hole-hole bilayer, with an insulating barrier of only 10 nm between the two quantum wells. The Coulomb drag resistivity is a direct measure of the strength of the interlayer particle-particle interactions. We explore the strongly interactin…
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We present measurements of Coulomb drag in an ambipolar GaAs/AlGaAs double quantum well structure that can be configured as both an electron-hole bilayer and a hole-hole bilayer, with an insulating barrier of only 10 nm between the two quantum wells. The Coulomb drag resistivity is a direct measure of the strength of the interlayer particle-particle interactions. We explore the strongly interacting regime of low carrier densities (2D interaction parameter $r_s$ up to 14). Our ambipolar device design allows comparison between the effects of the attractive electron-hole and repulsive hole-hole interactions, and also shows the effects of the different effective masses of electrons and holes in GaAs.
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Submitted 3 January, 2016; v1 submitted 27 November, 2015;
originally announced November 2015.
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Measurement and control of electron wave packets from a single-electron source
Authors:
J. Waldie,
P. See,
V. Kashcheyevs,
J. P. Griffiths,
I. Farrer,
G. A. C. Jones,
D. A. Ritchie,
T. J. B. M. Janssen,
M. Kataoka
Abstract:
We report an experimental technique to measure and manipulate the arrival-time and energy distributions of electrons emitted from a semiconductor electron pump, operated as both a single-electron source and a two-electron source. Using an energy-selective detector whose transmission we control on picosecond timescales, we can measure directly the electron arrival-time distribution and we determine…
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We report an experimental technique to measure and manipulate the arrival-time and energy distributions of electrons emitted from a semiconductor electron pump, operated as both a single-electron source and a two-electron source. Using an energy-selective detector whose transmission we control on picosecond timescales, we can measure directly the electron arrival-time distribution and we determine the upper-bound to the distribution width to be 30 ps. We study the effects of modifying the shape of the voltage waveform that drives the electron pump, and show that our results can be explained by a tunneling model of the emission mechanism. This information was in turn used to control the emission-time difference and energy gap between a pair of electrons.
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Submitted 22 July, 2015; v1 submitted 24 March, 2015;
originally announced March 2015.
