-
On-chip transfer of ultrashort graphene plasmon wavepackets using terahertz electronics
Authors:
Katsumasa Yoshioka,
Guillaume Bernard,
Taro Wakamura,
Masayuki Hashisaka,
Ken-ichi Sasaki,
Satoshi Sasaki,
Kenji Watanabe,
Takashi Taniguchi,
Norio Kumada
Abstract:
Steering transport of ultrashort polariton wavepackets is essential for achieving on-chip integrated nanocircuits with tightly confined electromagnetic fields towards ultrafast information processing. However, conventional optical techniques have struggled to integrate the necessary components for transferring polariton signals. Here, we address this challenge by electrically generating, manipulat…
▽ More
Steering transport of ultrashort polariton wavepackets is essential for achieving on-chip integrated nanocircuits with tightly confined electromagnetic fields towards ultrafast information processing. However, conventional optical techniques have struggled to integrate the necessary components for transferring polariton signals. Here, we address this challenge by electrically generating, manipulating, and reading out terahertz graphene plasmon-polariton wavepackets on-chip. By injecting an electrical pulse into graphene via an ohmic contact, we achieve coherent conversion of the pulse into a plasmon wavepacket exhibiting a pulse duration of 1.2 ps and extreme three-dimensional spatial confinement within a volume of $2.1 \times 10^{-18} m^3$. We reveal the transport properties of plasmons along graphene ribbons in different dielectric environments, providing a basis for designing graphene plasmonic circuits. Furthermore, we find that the conversion efficiency between the electrical pulses and plasmon wavepackets reaches ~30% thanks to the absence of a momentum mismatch. With unprecedented controllability, our platform represents a significant advance in on-chip handling of plasmonic signals in various van der Waals heterostructures.
△ Less
Submitted 5 November, 2023;
originally announced November 2023.
-
Gate-tunable giant superconducting nonreciprocal transport in few-layer $T_{\rm d}$-MoTe$_2$
Authors:
T. Wakamura,
M. Hashisaka,
S. Hoshino,
M. Bard,
S. Okazaki,
T. Sasagawa,
T. Taniguchi,
K. Watanabe,
K. Muraki,
N. Kumada
Abstract:
We demonstrate gate-tunable giant field-dependent nonreciprocal transport (magnetochiral anisotropy) in a noncentrosymmetric superconductor $T_{\rm d}$-MoTe$_2$ in the thin limit. Giant magnetochiral anisotropy (MCA) with a rectification coefficient $γ$ = $3.1 \times 10^6$ T$^{-1}$ A$^{-1}$, is observed at 230 mK, below the superconducting transition temperature ($T_c$). This is one of the largest…
▽ More
We demonstrate gate-tunable giant field-dependent nonreciprocal transport (magnetochiral anisotropy) in a noncentrosymmetric superconductor $T_{\rm d}$-MoTe$_2$ in the thin limit. Giant magnetochiral anisotropy (MCA) with a rectification coefficient $γ$ = $3.1 \times 10^6$ T$^{-1}$ A$^{-1}$, is observed at 230 mK, below the superconducting transition temperature ($T_c$). This is one of the largest values reported so far and is likely attributed to the reduced symmetry of the crystal structure. The temperature dependence of $γ$ indicates that the ratchet-like motion of magnetic vortices is the origin of the MCA, as supported by our theoretical model. For bilayer $T_{\rm d}$-MoTe$_2$, we successfully perform gate control of the MCA and realize threefold modulation of $γ$. Our experimental results provide a new route to realizing electrically controllable superconducting rectification devices in a single material.
△ Less
Submitted 16 March, 2023;
originally announced March 2023.
-
Ultrafast intrinsic optical-to-electrical conversion dynamics in graphene photodetector
Authors:
Katsumasa Yoshioka,
Taro Wakamura,
Masayuki Hashisaka,
Kenji Watanabe,
Takashi Taniguchi,
Norio Kumada
Abstract:
Optical-to-electrical (O-E) conversion in graphene is a central phenomenon for realizing anticipated ultrafast and low-power-consumption information technologies. However, revealing its mechanism and intrinsic time scale require uncharted terahertz (THz) electronics and device architectures. Here, we succeeded in resolving O-E conversion processes in high-quality graphene by on-chip electrical rea…
▽ More
Optical-to-electrical (O-E) conversion in graphene is a central phenomenon for realizing anticipated ultrafast and low-power-consumption information technologies. However, revealing its mechanism and intrinsic time scale require uncharted terahertz (THz) electronics and device architectures. Here, we succeeded in resolving O-E conversion processes in high-quality graphene by on-chip electrical readout of ultrafast photothermoelectric current. By suppressing the RC time constant using a resistive zinc oxide top gate, we constructed a gate-tunable graphene photodetector with a bandwidth of up to 220 GHz. By measuring nonlocal photocurrent dynamics, we found that the photocurrent extraction from the electrode is instantaneous without a measurable carrier transit time across several-micrometer-long graphene, following the Shockley-Ramo theorem. The time for photocurrent generation is exceptionally tunable from immediate to > 4 ps, and its origin is identified as Fermi-level-dependent intraband carrier-carrier scattering. Our results bridge the gap between ultrafast optical science and device engineering, accelerating ultrafast graphene optoelectronic applications.
△ Less
Submitted 10 March, 2022;
originally announced March 2022.
-
Novel transport phenomena in graphene induced by strong spin-orbit interaction
Authors:
Taro Wakamura,
Sophie Guéron,
Hélène Bouchiat
Abstract:
Graphene is known to have small intrinsic spin-orbit Interaction (SOI). In this review, we demonstrate that SOIs in graphene can be strongly enhanced by proximity effect when graphene is deposited on the top of transition metal dichalcogenides. We discuss the symmetry of the induced SOIs and differences between TMD underlayers in the capacity of inducing strong SOIs in graphene. The strong SOIs co…
▽ More
Graphene is known to have small intrinsic spin-orbit Interaction (SOI). In this review, we demonstrate that SOIs in graphene can be strongly enhanced by proximity effect when graphene is deposited on the top of transition metal dichalcogenides. We discuss the symmetry of the induced SOIs and differences between TMD underlayers in the capacity of inducing strong SOIs in graphene. The strong SOIs contribute to bring novel phenomena to graphene, exemplified by robust supercurrents sustained even under tesla-range magnetic fields.
△ Less
Submitted 14 December, 2021;
originally announced December 2021.
-
Detection of graphene's divergent orbital diamagnetism at the Dirac point
Authors:
J. Vallejo,
N. J. Wu,
C. Fermon,
M. Pannetier-Lecoeur,
T. Wakamura,
K. Watanabe,
T. Tanigushi,
T. Pellegrin,
A. Bernard,
S. Daddinounou,
V. Bouchiat,
S. Guéron,
M. Ferrier,
G. Montambaux,
H. Bouchiat
Abstract:
The electronic properties of graphene have been intensively investigated over the last decade, and signatures of the remarkable features of its linear Dirac spectrum have been displayed using transport and spectroscopy experiments. In contrast, the orbital magnetism of graphene, which is one of the most fundamental signature of the characteristic Berry phase of graphene's electronic wave functions…
▽ More
The electronic properties of graphene have been intensively investigated over the last decade, and signatures of the remarkable features of its linear Dirac spectrum have been displayed using transport and spectroscopy experiments. In contrast, the orbital magnetism of graphene, which is one of the most fundamental signature of the characteristic Berry phase of graphene's electronic wave functions, has not yet been measured in a single flake. In particular, the striking prediction of a divergent diamagnetic response at zero do** calls for an experimental test. Using a highly sensitive Giant Magnetoresistance sensor (GMR) we have measured the gate voltage-dependent magnetization of a single graphene monolayer encapsulated between boron nitride crystals. The signal exhibits a diamagnetic peak at the Dirac point whose magnetic field and temperature dependences agree with theoretical predictions starting from the work of Mc Clure \cite{McClure1956}. Our measurements open a new field of investigation of orbital currents in graphene and 2D topological materials, offering a new means to monitor Berry phase singularities and explore correlated states generated by combined effects of Coulomb interactions, strain or moiré potentials.
△ Less
Submitted 21 December, 2021; v1 submitted 9 December, 2020;
originally announced December 2020.
-
Phase-dependent dissipation and supercurrent of a graphene-superconductor ring under microwave irradiation
Authors:
Ziwei Dou,
Taro Wakamura,
Pauli Virtanen,
Nian-Jheng Wu,
Richard Deblock,
Sandrine Autier-Laurent,
Kenji Watanabe,
Takashi Taniguchi,
Sophie Guéron,
Hélène Bouchiat,
Meydi Ferrier
Abstract:
A junction with two superconductors coupled by a normal metal hosts Andreev bound states whose energy spectrum is phase-dependent and exhibits a minigap, resulting in a periodic supercurrent. Phase-dependent dissipation also appears at finite frequency due to relaxation of Andreev bound states. While dissipation and supercurrent versus phase have previously been measured near thermal equilibrium,…
▽ More
A junction with two superconductors coupled by a normal metal hosts Andreev bound states whose energy spectrum is phase-dependent and exhibits a minigap, resulting in a periodic supercurrent. Phase-dependent dissipation also appears at finite frequency due to relaxation of Andreev bound states. While dissipation and supercurrent versus phase have previously been measured near thermal equilibrium, their behavior in nonequilibrium is still elusive. By measuring the ac susceptibility of a graphene-superconductor junction under microwave irradiation, we find supercurrent response deviates from adiabatic ac Josephson effect as irradiation frequency is larger than relaxation rate. Notably, when irradiation frequency further increases above the minigap, the dissipation is enhanced at phase 0 where the minigap is largest and dissipation is minimum in equilibrium. We argue that this is evidence of the nonequilibrium distribution function which allows additional level transitions on the same side of the minigap. These results reveal that phase-dependent dissipation is more sensitive than supercurrent to microwave irradiation, and suggest a new method to investigate photon-assisted physics in proximitized superconducting system.
△ Less
Submitted 23 November, 2020; v1 submitted 14 November, 2020;
originally announced November 2020.
-
Spin-orbit-enhanced robustness of supercurrent in graphene/WS$_2$ Josephson junctions
Authors:
T. Wakamura,
N. J. Wu,
A. D. Chepelianskii,
S. Guéron,
M. Och,
M. Ferrier,
T. Taniguchi,
K. Watanabe,
C. Mattevi,
H. Bouchiat
Abstract:
We demonstrate enhanced robustness of the supercurrent through graphene-based Josephson junctions in which strong spin-orbit interactions (SOIs) are induced. We compare the persistence of a supercurrent at high magnetic fields between Josephson junctions with graphene on hexagonal boron-nitride and graphene on WS$_2$, where strong SOIs are induced via the proximity effect. We find that in the shor…
▽ More
We demonstrate enhanced robustness of the supercurrent through graphene-based Josephson junctions in which strong spin-orbit interactions (SOIs) are induced. We compare the persistence of a supercurrent at high magnetic fields between Josephson junctions with graphene on hexagonal boron-nitride and graphene on WS$_2$, where strong SOIs are induced via the proximity effect. We find that in the shortest junctions both systems display signatures of induced superconductivity, characterized by a suppressed differential resistance at a low current, in magnetic fields up to 1 T. In longer junctions however, only graphene on WS$_2$ exhibits induced superconductivity features in such high magnetic fields, and they even persist up to 7 T. We argue that these robust superconducting signatures arise from quasi-ballistic edge states stabilized by the strong SOIs induced in graphene by WS$_2$.
△ Less
Submitted 1 January, 2021; v1 submitted 7 September, 2020;
originally announced September 2020.
-
Spin-Orbit Interaction Induced in Graphene by Transition-Metal Dichalcogenides
Authors:
T. Wakamura,
F. Reale,
P. Palczynski,
M. Q. Zhao,
A. T. C. Johnson,
S. Guéron,
C. Mattevi,
A. Ouerghi,
H. Bouchiat
Abstract:
We report a systematic study on strong enhancement of spin-orbit interaction (SOI) in graphene driven by transition-metal dichalcogenides (TMDs). Low temperature magnetotoransport measurements of graphene proximitized to different TMDs (monolayer and bulk WSe$_2$, WS$_2$ and monolayer MoS$_2$) all exhibit weak antilocalization peaks, a signature of strong SOI induced in graphene. The amplitudes of…
▽ More
We report a systematic study on strong enhancement of spin-orbit interaction (SOI) in graphene driven by transition-metal dichalcogenides (TMDs). Low temperature magnetotoransport measurements of graphene proximitized to different TMDs (monolayer and bulk WSe$_2$, WS$_2$ and monolayer MoS$_2$) all exhibit weak antilocalization peaks, a signature of strong SOI induced in graphene. The amplitudes of the induced SOI are different for different materials and thickness, and we find that monolayer WSe$_2$ and WS$_2$ can induce much stronger SOI than bulk ones and also monolayer MoS$_2$. The estimated spin-orbit (SO) scattering strength for the former reaches $\sim$ 10 meV whereas for the latter it is around 1 meV or less. We also discuss the symmetry and type of the induced SOI in detail, especially focusing on the identification of intrinsic and valley-Zeeman (VZ) SOI via the dominant spin relaxation mechanism. Our findings offer insight on the possible realization of the quantum spin Hall (QSH) state in graphene.
△ Less
Submitted 19 February, 2019; v1 submitted 17 September, 2018;
originally announced September 2018.
-
Electronic band structure of Two-Dimensional WS2/Graphene van der Waals Heterostructures
Authors:
Hugo Henck,
Zeineb Ben Aziza,
Debora Pierucci,
Feriel Laourine,
Francesco Reale,
Pawel Palczynski,
Julien Chaste,
Mathieu G. Silly,
François Bertran,
Patrick Le Fevre,
Emmanuel Lhuillier,
Taro Wakamura,
Cecilia Mattevi,
Julien E. Rault,
Matteo Calandra,
Abdelkarim Ouerghi
Abstract:
Combining single-layer two-dimensional semiconducting transition metal dichalcogenides (TMDs) with graphene layer in van der Waals heterostructures offers an intriguing means of controlling the electronic properties through these heterostructures. Here, we report the electronic and structural properties of transferred single layer WS2 on epitaxial graphene using micro-Raman spectroscopy, angle-res…
▽ More
Combining single-layer two-dimensional semiconducting transition metal dichalcogenides (TMDs) with graphene layer in van der Waals heterostructures offers an intriguing means of controlling the electronic properties through these heterostructures. Here, we report the electronic and structural properties of transferred single layer WS2 on epitaxial graphene using micro-Raman spectroscopy, angle-resolved photoemission spectroscopy measurements (ARPES) and Density Functional Theory (DFT) calculations. The results show good electronic properties as well as well-defined band arising from the strong splitting of the single layer WS2 valence band at K points, with a maximum splitting of 0.44 eV. By comparing our DFT results with local and hybrid functionals, we find the top valence band of the experimental heterostructure is close to the calculations for suspended single layer WS2. . Our results provide an important reference for future studies of electronic properties of WS2 and its applications in valleytronic devices.
△ Less
Submitted 13 June, 2018;
originally announced June 2018.
-
Detection of the interfacial exchange field at a ferromagnetic insulator-nonmagnetic metal interface with pure spin currents
Authors:
P. K. Muduli,
M. Kimata,
Y. Omori,
T. Wakamura,
Saroj P. Dash,
YoshiChika Otani
Abstract:
At the interface between a nonmagnetic metal (NM) and a ferromagnetic insulator (FI) spin current can interact with the magnetization, leading to a modulation of the spin current. The interfacial exchange field at these FI-NM interfaces can be probed by placing the interface in contact with the spin transport channel of a lateral spin valve (LSV) device and observing additional spin relaxation pro…
▽ More
At the interface between a nonmagnetic metal (NM) and a ferromagnetic insulator (FI) spin current can interact with the magnetization, leading to a modulation of the spin current. The interfacial exchange field at these FI-NM interfaces can be probed by placing the interface in contact with the spin transport channel of a lateral spin valve (LSV) device and observing additional spin relaxation processes. We study interfacial exchange field in lateral spin valve devices where Cu spin transport channel is in proximity with ferromagnetic insulator EuS (EuS-LSV) and yttrium iron garnet Y$_3$Fe$_5$O$_{12}$ (YIG-LSV). The spin signals were compared with reference lateral spin valve devices fabricated on nonmagnetic Si/SiO$_2$ substrate with MgO or AlO$_x$ cap**. The nonlocal spin valve signal is about 4 and 6 times lower in the EuS-LSV and YIG-LSV, respectively. The suppression in the spin signal has been attributed to enhanced surface spin-flip probability at the Cu-EuS (or Cu-YIG) interface due to interfacial spin-orbit field. Besides spin signal suppression we also found widely observed low temperature peak in the spin signal at $T \sim$30 K is shifted to higher temperature in the case of devices in contact with EuS or YIG. Temperature dependence of spin signal for different injector-detector distances reveal fluctuating exchange field at these interfaces cause additional spin decoherence which limit spin relaxation time in addition to conventional sources of spin relaxation. Our results show that temperature dependent measurement with pure spin current can be used to probe interfacial exchange field at the ferromagnetic insulator-nonmagnetic metal interface.
△ Less
Submitted 26 June, 2018; v1 submitted 7 May, 2018;
originally announced May 2018.
-
Strong Spin-Orbit Interaction Induced in Graphene by Monolayer WS$_2$
Authors:
Taro Wakamura,
Francesco Reale,
Pawel Palczynski,
Sophie Guéron,
Cecilia Mattevi,
Hélène Bouchiat
Abstract:
We demonstrate strong anisotropic spin-orbit interaction (SOI) in graphene induced by monolayer WS$_2$. Direct comparison between graphene/monolayer WS$_2$ and graphene/bulk WS$_2$ system in magnetotransport measurements reveals that monolayer transition metal dichalcogenide (TMD) can induce much stronger SOI than bulk. Detailed theoretical analysis of the weak-antilocalization curves gives an est…
▽ More
We demonstrate strong anisotropic spin-orbit interaction (SOI) in graphene induced by monolayer WS$_2$. Direct comparison between graphene/monolayer WS$_2$ and graphene/bulk WS$_2$ system in magnetotransport measurements reveals that monolayer transition metal dichalcogenide (TMD) can induce much stronger SOI than bulk. Detailed theoretical analysis of the weak-antilocalization curves gives an estimated spin-orbit energy ($E_{\rm so}$) higher than 10 meV. The symmetry of the induced SOI is also discussed, and the dominant $z$ $\rightarrow$ $-z$ symmetric SOI can only explain the experimental results. Spin relaxation by the Elliot-Yafet (EY) mechanism and anomalous resistance increase with temperature close to the Dirac point indicates Kane-Mele (KM) SOI induced in graphene.
△ Less
Submitted 11 April, 2018; v1 submitted 20 October, 2017;
originally announced October 2017.
-
Inverse spin Hall effect in a closed loop circuit
Authors:
Y. Omori,
F. Auvray,
T. Wakamura,
Y. Niimi,
A. Fert,
Y. Otani
Abstract:
We present measurements of inverse spin Hall effects (ISHEs) in which the conversion of a spin current into a charge current via the ISHE is detected not as a voltage in a standard open circuit but directly as the charge current generated in a closed loop. The method is applied to the ISHEs of Bi-doped Cu and Pt. The derived expression of ISHE for the loop structure can relate the charge current f…
▽ More
We present measurements of inverse spin Hall effects (ISHEs) in which the conversion of a spin current into a charge current via the ISHE is detected not as a voltage in a standard open circuit but directly as the charge current generated in a closed loop. The method is applied to the ISHEs of Bi-doped Cu and Pt. The derived expression of ISHE for the loop structure can relate the charge current flowing into the loop to the spin Hall angle of the SHE material and the resistance of the loop.
△ Less
Submitted 22 June, 2014; v1 submitted 8 May, 2014;
originally announced May 2014.
-
Experimental Verification of Comparability between Spin-Orbit and Spin-Diffusion Lengths
Authors:
Yasuhiro Niimi,
Dahai Wei,
Hiroshi Idzuchi,
Taro Wakamura,
Takeo Kato,
YoshiChika Otani
Abstract:
We experimentally confirmed that the spin-orbit lengths of noble metals obtained from weak anti-localization measurements are comparable to the spin diffusion lengths determined from lateral spin valve ones. Even for metals with strong spin-orbit interactions such as Pt, we verified that the two methods gave comparable values which were much larger than those obtained from recent spin torque ferro…
▽ More
We experimentally confirmed that the spin-orbit lengths of noble metals obtained from weak anti-localization measurements are comparable to the spin diffusion lengths determined from lateral spin valve ones. Even for metals with strong spin-orbit interactions such as Pt, we verified that the two methods gave comparable values which were much larger than those obtained from recent spin torque ferromagnetic resonance measurements. To give a further evidence for the comparability between the two length scales, we measured the disorder dependence of the spin-orbit length of copper by changing the thickness of the wire. The obtained spin-orbit length nicely follows a linear law as a function of the diffusion coefficient, clearly indicating that the Elliott-Yafet mechanism is dominant as in the case of the spin diffusion length.
△ Less
Submitted 6 January, 2013; v1 submitted 6 November, 2012;
originally announced November 2012.
