Showing 1–28 of 28 results for author: Wakabayashi, Y K

SrRuO3 under tensile strain: Thickness-dependent electronic and magnetic properties

Authors: Yuki K. Wakabayashi, Masaki Kobayashi, Yuichi Seki, Kohei Yamagami, Takahito Takeda, Takuo Ohkochi, Yoshitaka Taniyasu, Yoshiharu Krockenberger, Hideki Yamamoto

Abstract: The burgeoning fields of spintronics and topological electronics require materials possessing a unique combination of properties: ferromagnetism, metallicity, and chemical stability. SrRuO3 (SRO) stands out as a compelling candidate due to its exceptional combination of these attributes. However, understanding its behavior under tensile strain, especially its thickness-dependent changes, remains e… ▽ More The burgeoning fields of spintronics and topological electronics require materials possessing a unique combination of properties: ferromagnetism, metallicity, and chemical stability. SrRuO3 (SRO) stands out as a compelling candidate due to its exceptional combination of these attributes. However, understanding its behavior under tensile strain, especially its thickness-dependent changes, remains elusive. This study employs machine-learning-assisted molecular beam epitaxy to investigate SRO films with thicknesses from 1 to 10 nm. This work complements the existing focus on compressive-strained SRO, opening a new avenue for exploring its hitherto concealed potential. Using soft X-ray magnetic circular dichroism, we uncover an intriguing interplay between film thickness, electronic structure, and magnetic properties. Our key findings reveal an intensified localization of Ru 4d t2g-O 2p hybridized states at lower thicknesses, attributed to the weakened orbital hybridization. Furthermore, we find a progressive reduction of magnetic moments for both Ru and O ions as film thickness decreases. Notably, a non-ferromagnetic insulating state emerges at a critical thickness of 1 nm, marking a pivotal transition from the metallic ferromagnetic phase. These insights emphasize the importance of considering thickness-dependent properties when tailoring SRO for next-generation spintronic and topological electronic devices. △ Less

Submitted 8 April, 2024; originally announced April 2024.

Magnetic anisotropy driven by ligand in 4d transition metal oxide SrRuO3

Authors: Yuki K. Wakabayashi, Masaki Kobayashi, Yuichi Seki, Yoshinori Kotani, Takuo Ohkochi, Kohei Yamagami, Miho Kitamura, Yoshitaka Taniyasu, Yoshiharu Krockenberger, Hideki Yamamoto

Abstract: The origin of magnetic anisotropy in magnetic compounds is a longstanding issue in solid state physics and nonmagnetic ligand ions are considered to contribute little to magnetic anisotropy. Here, we introduce the concept of ligand driven magnetic anisotropy in a complex transition-metal oxide. We conducted X ray absorption and X ray magnetic circular dichroism spectroscopies at the Ru and O edges… ▽ More The origin of magnetic anisotropy in magnetic compounds is a longstanding issue in solid state physics and nonmagnetic ligand ions are considered to contribute little to magnetic anisotropy. Here, we introduce the concept of ligand driven magnetic anisotropy in a complex transition-metal oxide. We conducted X ray absorption and X ray magnetic circular dichroism spectroscopies at the Ru and O edges in the 4d ferromagnetic metal SrRuO3. Systematic variation of the sample thickness in the range below 10 nm allowed us to control the localization of Ru 4d t2g states, which affects the magnetic coupling between the Ru and O ions. We found that the orbital magnetization of the ligand induced via hybridization with the Ru 4d orbital determines the magnetic anisotropy in SrRuO3. △ Less

Submitted 13 September, 2023; v1 submitted 11 September, 2023; originally announced September 2023.

Stoichiometric growth of SrTiO3 films via Bayesian optimization with adaptive prior mean

Authors: Yuki K. Wakabayashi, Takuma Otsuka, Yoshiharu Krockenberger, Hiroshi Sawada, Yoshitaka Taniyasu, Hideki Yamamoto

Abstract: Perovskite insulator SrTiO3 is expected to be applied to the next generation of electronic and photonic devices as high-k capacitors and photocatalysts. However, reproducible growth of highly insulating stoichiometric SrTiO3 films remains challenging due to the difficulty of the precise stoichiometry control in perovskite oxide films. Here, to grow stoichiometric SrTiO3 thin films by fine-tuning m… ▽ More Perovskite insulator SrTiO3 is expected to be applied to the next generation of electronic and photonic devices as high-k capacitors and photocatalysts. However, reproducible growth of highly insulating stoichiometric SrTiO3 films remains challenging due to the difficulty of the precise stoichiometry control in perovskite oxide films. Here, to grow stoichiometric SrTiO3 thin films by fine-tuning multiple growth conditions, we developed a new Bayesian optimization (BO)-based machine learning method that encourages the exploration of the search space by varying the prior mean to get out of suboptimal growth condition parameters. Using simulated data, we demonstrate the efficacy of the new BO method, which reproducibly reaches the global best conditions. With the BO method implemented in machine-learning-assisted molecular beam epitaxy (ML-MBE), highly insulating stoichiometric SrTiO3 film with no absorption in the band gap was developed in only 44 MBE growth runs. The proposed algorithm provides an efficient experimental design platform that is not as dependent on the experience of individual researchers and will accelerate not only oxide electronics but also various material syntheses. △ Less

Submitted 1 March, 2023; originally announced March 2023.

Scattering-dependent transport of SrRuO3 films: From Weyl fermion transport to hump-like Hall effect anomaly

Authors: Shingo Kaneta-Takada, Yuki K. Wakabayashi, Yoshiharu Krockenberger, Hiroshi Irie, Shinobu Ohya, Masaaki Tanaka, Yoshitaka Taniyasu, Hideki Yamamoto

Abstract: Recent observation of quantum transport phenomena of Weyl fermions has brought much attention to 4d ferromagnetic perovskite SrRuO3 as a magnetic Weyl semimetal. Besides, the hump-like Hall effect anomaly, which might have a topological origin, has also been reported for this material. Here, we show that the emergence of such phenomena is governed by the degree of scattering determined by the defe… ▽ More Recent observation of quantum transport phenomena of Weyl fermions has brought much attention to 4d ferromagnetic perovskite SrRuO3 as a magnetic Weyl semimetal. Besides, the hump-like Hall effect anomaly, which might have a topological origin, has also been reported for this material. Here, we show that the emergence of such phenomena is governed by the degree of scattering determined by the defect density (Ru-deficiency- and/or interface-driven-defect scattering) and measurement temperature (phonon scattering), where the former is controlled by varying the growth conditions of the SrRuO3 films in molecular beam epitaxy as well as the film thickness. The resulting electronic transport properties can be classified into three categories: clean, intermediate, and dirty regimes. The transport of Weyl fermions emerges in the clean regime, whereas that of topologically trivial conduction electrons in the ferromagnetic metal state prevail in the intermediate and dirty regimes. In the clean and intermediate regimes, anomalous Hall resistivity obeys a scaling law incorporating the intrinsic Karplus-Luttinger (Berry phase) and extrinsic side-jump mechanisms. The hump-like Hall effect anomaly is observed only in the dirty regime, which is contrary to the scaling law between anomalous Hall resistivity and longitudinal resistivity. Hence, we conclude that this anomaly is not inherent to the material and does not have a topological origin. We also provide defect- and temperature-dependent transport phase diagrams of stoichiometric SrRuO3 and Ru-deficient SrRu0.7O3 where the appearance of Weyl fermions and hump-like Hall effect anomaly are mapped. These diagrams may serve as a guideline for designing SrRu1-xO3-based spintronic and topological electronic devices. △ Less

Submitted 9 February, 2023; originally announced February 2023.

Origin of magnetically dead layers in spinel ferrites $M\text{Fe}_2\text{O}_4$ grown on $\text{Al}_2\text{O}_3$: Effects of post-deposition annealing studied by XMCD

Authors: Yosuke Nonaka, Yuki K. Wakabayashi, Goro Shibata, Shoya Sakamoto, Keisuke Ikeda, Zhendong Chi, Yuxuan Wan, Masahiro Suzuki, Arata Tanaka, Masaaki Tanaka, Atsushi Fujimori

Abstract: We study the electronic and magnetic states of as-grown and annealed $M\text{Fe}_2\text{O}_4$(111)/$\text{Al}_2\text{O}_3$(111) ($M=\text{Co, Ni}$) thin films with various thicknesses grown on Si(111) substrates with the $γ$-$\text{Al}_2\text{O}_3$(111) buffer layers by using x-ray absorption spectroscopy (XAS) and x-ray magnetic circular dichroism (XMCD), to investigate magnetically dead layers i… ▽ More We study the electronic and magnetic states of as-grown and annealed $M\text{Fe}_2\text{O}_4$(111)/$\text{Al}_2\text{O}_3$(111) ($M=\text{Co, Ni}$) thin films with various thicknesses grown on Si(111) substrates with the $γ$-$\text{Al}_2\text{O}_3$(111) buffer layers by using x-ray absorption spectroscopy (XAS) and x-ray magnetic circular dichroism (XMCD), to investigate magnetically dead layers in these films. Although the magnetically dead layers in the as-grown samples are formed near the interface with the $\text{Al}_2\text{O}_3$ buffer layer, we reveal that ferrimagnetic order is partially recovered by post-deposition annealing at 973 K for 48 hours in air. By analyzing the line shapes of the XAS and XMCD spectra, we conclude that, in the dead layers, there are a significant number of vacancies at the $T_d$ sites of the spinel structure, which may be the microscopic origin of the degraded ferrimagnetic order in the $M\text{Fe}_2\text{O}_4$(111) thin films. △ Less

Submitted 5 February, 2023; originally announced February 2023.

Comments: 20 pages, 10 figures, 2 tables

Journal ref: Phys. Rev. Mater. 7. 044413 (2023)

Isotropic orbital magnetic moments in magnetically anisotropic SrRuO3 films

Authors: Yuki K. Wakabayashi, Masaki Kobayashi, Yukiharu Takeda, Miho Kitamura, Takahito Takeda, Ryo Okano, Yoshiharu Krockenberger, Yoshitaka Taniyasu, Hideki Yamamoto

Abstract: Epitaxially strained SrRuO3 films have been a model system for understanding the magnetic anisotropy in metallic oxides. In this paper, we investigate the anisotropy of the Ru 4d and O 2p electronic structure and magnetic properties using high-quality epitaxially strained (compressive and tensile) SrRuO3 films grown by machine-learning-assisted molecular beam epitaxy. The element-specific magnetic… ▽ More Epitaxially strained SrRuO3 films have been a model system for understanding the magnetic anisotropy in metallic oxides. In this paper, we investigate the anisotropy of the Ru 4d and O 2p electronic structure and magnetic properties using high-quality epitaxially strained (compressive and tensile) SrRuO3 films grown by machine-learning-assisted molecular beam epitaxy. The element-specific magnetic properties and the hybridization between the Ru 4d and O 2p orbitals were characterized by Ru M2,3-edge and O K-edge soft X-ray absorption spectroscopy and X-ray magnetic circular dichroism measurements. The magnetization curves for the Ru 4d and O 2p magnetic moments are identical, irrespective of the strain type, indicating the strong magnetic coupling between the Ru and O ions. The electronic structure and the orbital magnetic moment relative to the spin magnetic moment are isotropic despite the perpendicular and in-plane magnetic anisotropy in the compressive-strained and tensile-strained SrRuO3 films; i.e., the orbital magnetic moments have a negligibly small contribution to the magnetic anisotropy. This result contradicts Bruno model, where magnetic anisotropy arises from the difference in the orbital magnetic moment between the perpendicular and in-plane directions. Contributions of strain-induced electric quadrupole moments to the magnetic anisotropy are discussed, too. △ Less

Submitted 13 May, 2022; originally announced May 2022.

Bayesian optimization with experimental failure for high-throughput materials growth

Authors: Yuki K. Wakabayashi, Takuma Otsuka, Yoshiharu Krockenberger, Hiroshi Sawada, Yoshitaka Taniyasu, Hideki Yamamoto

Abstract: A crucial problem in achieving innovative high-throughput materials growth with machine learning and automation techniques, such as Bayesian optimization (BO) and robotic experimentation, has been a lack of an appropriate way to handle missing data due to experimental failures. Here, we propose a new BO algorithm that complements the missing data in the optimization of materials growth parameters.… ▽ More A crucial problem in achieving innovative high-throughput materials growth with machine learning and automation techniques, such as Bayesian optimization (BO) and robotic experimentation, has been a lack of an appropriate way to handle missing data due to experimental failures. Here, we propose a new BO algorithm that complements the missing data in the optimization of materials growth parameters. The proposed method provides a flexible optimization algorithm capable of searching a wide multi-dimensional parameter space. We demonstrate the effectiveness of the method with simulated data as well as in its implementation for actual materials growth, namely machine-learning-assisted molecular beam epitaxy (ML-MBE) of SrRuO3, which is widely used as a metallic electrode in oxide electronics. Through the exploitation and exploration in a wide three-dimensional parameter space, while complementing the missing data, we attained tensile-strained SrRuO3 film with a high residual resistivity ratio of 80.1, the highest among tensile-strained SrRuO3 films ever reported, in only 35 MBE growth runs. △ Less

Submitted 11 April, 2022; originally announced April 2022.

Single-domain perpendicular magnetization induced by the coherent O 2p-Ru 4d hybridized state in an ultra-high-quality SrRuO3 film

Authors: Yuki K. Wakabayashi, Masaki Kobayashi, Yukiharu Takeda, Kosuke Takiguchi, Hiroshi Irie, Shin-ichi Fujimori, Takahito Takeda, Ryo Okano, Yoshiharu Krockenberger, Yoshitaka Taniyasu, Hideki Yamamoto

Abstract: We investigated the Ru 4d and O 2p electronic structure and magnetic properties of an ultra-high-quality SrRuO3 film on SrTiO3 grown by machine-learning-assisted molecular beam epitaxy. The high itinerancy and long quantum lifetimes of the quasiparticles in the Ru 4d t2g-O 2p hybridized valence band are confirmed by observing the prominent well-screened peak in the Ru 3d core-level photoemission s… ▽ More We investigated the Ru 4d and O 2p electronic structure and magnetic properties of an ultra-high-quality SrRuO3 film on SrTiO3 grown by machine-learning-assisted molecular beam epitaxy. The high itinerancy and long quantum lifetimes of the quasiparticles in the Ru 4d t2g-O 2p hybridized valence band are confirmed by observing the prominent well-screened peak in the Ru 3d core-level photoemission spectrum, the coherent peak near the Fermi energy in the valence band spectrum, and quantum oscillations in the resistivity. The element-specific magnetic properties and the hybridization between the Ru 4d and O 2p orbitals were characterized by Ru M2,3-edge and O K-edge soft X-ray absorption spectroscopy and X-ray magnetic circular dichroism measurements. The ultra-high-quality SrRuO3 film with the residual resistivity ratio of 86 shows the large orbital magnetic moment of oxygen ions induced by the strong orbital hybridization of the O 2p states with the spin-polarized Ru 4d t2g states. The film also shows single-domain perpendicular magnetization with an almost ideal remanent magnetization ratio of 0.97. These results provide detailed insights into the relevance between orbital hybridization and the perpendicular magnetic anisotropy in SrRuO3/SrTiO3 systems. △ Less

Submitted 10 August, 2021; originally announced August 2021.

Reduced magnetocrystalline anisotropy of CoFe$_2$O$_4$ thin films studied by angle-dependent x-ray magnetic circular dichroism

Authors: Yosuke Nonaka, Yuki K. Wakabayashi, Goro Shibata, Shoya Sakamoto, Keisuke Ikeda, Zhendong Chi, Yuxuan Wan, Masahiro Suzuki, Tsuneharu Koide, Masaaki Tanaka, Ryosho Nakane, Atsushi Fujimori

Abstract: Spinel-type CoFe$_2$O$_4$ is a ferrimagnetic insulator with the Néel temperature exceeding 790 K, and shows a strong cubic magnetocrystalline anisotropy (MCA) in bulk materials. However, when a CoFe$_2$O$_4$ film is grown on other materials, its magnetic properties are degraded so that so-called magnetically dead layers are expected to be formed in the interfacial region. We investigate how the ma… ▽ More Spinel-type CoFe$_2$O$_4$ is a ferrimagnetic insulator with the Néel temperature exceeding 790 K, and shows a strong cubic magnetocrystalline anisotropy (MCA) in bulk materials. However, when a CoFe$_2$O$_4$ film is grown on other materials, its magnetic properties are degraded so that so-called magnetically dead layers are expected to be formed in the interfacial region. We investigate how the magnetic anisotropy of CoFe$_2$O$_4$ is modified at the interface of CoFe$_2$O$_4$/Al$_2$O$_3$ bilayers grown on Si(111) using x-ray magnetic circular dichroism (XMCD). We find that the thinner CoFe$_2$O$_4$ films have significantly smaller MCA values than bulk materials. The reduction of MCA is explained by the reduced number of Co$^{2+}$ ions at the $O_h$ site reported by a previous study [Y. K. Wakabayashi $\textit{et al.}$, Phys. Rev. B $\textbf{96}$, 104410 (2017)]. △ Less

Submitted 23 July, 2021; originally announced July 2021.

Comments: 5 pages, 3 figures

Journal ref: AIP Advances 11, 085317 (2021)

High-mobility two-dimensional carriers from surface Fermi arcs in magnetic Weyl semimetal films

Authors: Shingo Kaneta-Takada, Yuki K. Wakabayashi, Yoshiharu Krockenberger, Toshihiro Nomura, Yoshimitsu Kohama, Sergey A. Nikolaev, Hena Das, Hiroshi Irie, Kosuke Takiguchi, Shinobu Ohya, Masaaki Tanaka, Yoshitaka Taniyasu, Hideki Yamamoto

Abstract: High-mobility two-dimensional carriers originating from surface Fermi arcs in magnetic Weyl semimetals are highly desired for accessing exotic quantum transport phenomena and for topological electronics applications. Here, we demonstrate high-mobility two-dimensional carriers that show quantum oscillations in magnetic Weyl semimetal SrRuO3 epitaxial films by systematic angle-dependent, high-magnet… ▽ More High-mobility two-dimensional carriers originating from surface Fermi arcs in magnetic Weyl semimetals are highly desired for accessing exotic quantum transport phenomena and for topological electronics applications. Here, we demonstrate high-mobility two-dimensional carriers that show quantum oscillations in magnetic Weyl semimetal SrRuO3 epitaxial films by systematic angle-dependent, high-magnetic field magnetotransport experiments. The exceptionally high-quality SrRuO3 films were grown by state-of-the-art oxide thin film growth technologies driven by machine learning algorithm. The quantum oscillations for the 10-nm SrRuO3 film show a high quantum mobility of 3500 cm2/Vs, a light cyclotron mass, and two-dimensional angular dependence, which can be attributed to the surface Fermi arcs. The linear thickness dependence of the phase shift of the quantum oscillations provides evidence for the non-trivial nature of the quantum oscillations mediated by the surface Fermi arcs. In addition, at low temperatures and under magnetic fields of up to 52 T, the quantum limit of SrRuO3 manifests the chiral anomaly of the Weyl nodes. Emergence of the hitherto hidden two-dimensional Weyl states in a ferromagnetic oxide pave the way to explore novel quantum transport phenomena for topological oxide electronics. △ Less

Submitted 22 December, 2021; v1 submitted 6 June, 2021; originally announced June 2021.

Wide-range epitaxial strain control of electrical and magnetic properties in high-quality SrRuO3 films

Authors: Yuki K. Wakabayashi, Shingo Kaneta-Takada, Yoshiharu Krockenberger, Yoshitaka Taniyasu, Hideki Yamamoto

Abstract: Epitaxial strain in 4d ferromagnet SrRuO3 films is directly linked to the physical properties through the strong coupling between lattices, electrons, and spins. It provides an excellent opportunity to tune the functionalities of SrRuO3 in electronic and spintronic devices. However, a thorough understanding of the epitaxial strain effect in SrRuO3 has remained elusive due to the lack of systematic… ▽ More Epitaxial strain in 4d ferromagnet SrRuO3 films is directly linked to the physical properties through the strong coupling between lattices, electrons, and spins. It provides an excellent opportunity to tune the functionalities of SrRuO3 in electronic and spintronic devices. However, a thorough understanding of the epitaxial strain effect in SrRuO3 has remained elusive due to the lack of systematic studies. This study demonstrates wide-range epitaxial strain control of electrical and magnetic properties in high-quality SrRuO3 films. The epitaxial strain was imposed by cubic or pseudocubic perovskite substrates having a lattice mismatch of -1.6 to 2.3% with reference to bulk SrRuO3. The Poisson ratio, which describes the two orthogonal distortions due to the substrate clam** effect, is estimated to be 0.33. The Curie temperature (TC) and residual resistivity ratios of the series of films are higher than or comparable to the highest reported values for SrRuO3 on each substrate, confirming the high crystalline quality of the films. A TC of 169 K is achieved in a tensile-strained SrRuO3 film on the DyScO3 (110) substrate, which is the highest value ever reported for SrRuO3. The TC (146-169 K), magnetic anisotropy (perpendicular or in-plane magnetic easy axis), and metallic conduction (residual resistivity at 2 K of 2.10 - 373 μΩcm) of SrRuO3 are widely controlled by epitaxial strain. These results provide guidelines to design SrRuO3-based heterostructures for device applications. △ Less

Submitted 28 January, 2021; originally announced January 2021.

Structural and transport properties of highly Ru-deficient SrRu0.7O3 thin films prepared by molecular beam epitaxy: comparison with stoichiometric SrRuO3

Authors: Yuki K. Wakabayashi, Shingo Kaneta-Takada, Yoshiharu Krockenberger, Kosuke Takiguchi, Shinobu Ohya, Masaaki Tanaka, Yoshitaka Taniyasu, Hideki Yamamoto

Abstract: We investigate structural and transport properties of highly Ru-deficient SrRu0.7O3 thin films prepared by molecular beam epitaxy on (001) SrTiO3 substrates. To distinguish the influence of the two types of disorders in the films, Ru vacancies within lattices and disorders near the interface, SrRu0.7O3 thin films with various thicknesses (t = 1-60 nm) were prepared. It was found that the influence… ▽ More We investigate structural and transport properties of highly Ru-deficient SrRu0.7O3 thin films prepared by molecular beam epitaxy on (001) SrTiO3 substrates. To distinguish the influence of the two types of disorders in the films, Ru vacancies within lattices and disorders near the interface, SrRu0.7O3 thin films with various thicknesses (t = 1-60 nm) were prepared. It was found that the influence of the former dominates the electrical and magnetic properties when t > 5-10 nm, while that of the latter does when t < 5-10 nm. Structural characterizations revealed that the crystallinity, in terms of the Sr and O sublattices, of SrRu0.7O3 thin films, is as high as that of the ultrahigh-quality SrRuO3 ones. The Curie temperature (TC) analysis elucidated that SrRu0.7O3 (TC = 140 K) is a material distinct from SrRuO3 (TC = 150 K). Despite the large Ru deficiency (30%), the SrRu0.7O3 films showed metallic conduction when t > 5 nm. In high-field magnetoresistance measurements, the fascinating phenomenon of Weyl fermion transport was not observed for the SrRu0.7O3 thin films irrespective of thickness, which is in contrast to the stoichiometric SrRuO3 films. The (magneto)transport properties suggest that a picture of carrier scattering due to the Ru vacancies is appropriate for SrRu0.7O3, and also that proper stoichiometry control is a prerequisite to utilizing the full potential of SrRuO3 as a magnetic Weyl semimetal and two-dimensional spin-polarized system. Nevertheless, the large tolerance in Ru composition (30 %) to metallic conduction is advantageous for some practical applications where SrRu1-xO3 is exploited as an epitaxial conducting layer. △ Less

Submitted 13 January, 2021; originally announced January 2021.

Thickness-dependent quantum transport of Weyl fermions in ultra-high-quality SrRuO3 films

Authors: Shingo Kaneta-Takada, Yuki K. Wakabayashi, Yoshiharu Krockenberger, Shinobu Ohya, Masaaki Tanaka, Yoshitaka Taniyasu, Hideki Yamamoto

Abstract: The recent observation of Weyl fermions in the itinerant 4d ferromagnetic perovskite SrRuO3 points to this material being a good platform for exploring novel physics related to a pair of Weyl nodes in epitaxial heterostructures. In this letter, we report the thickness-dependent magnetotransport properties of ultra-high-quality epitaxial SrRuO3 films grown under optimized conditions on SrTiO3 subst… ▽ More The recent observation of Weyl fermions in the itinerant 4d ferromagnetic perovskite SrRuO3 points to this material being a good platform for exploring novel physics related to a pair of Weyl nodes in epitaxial heterostructures. In this letter, we report the thickness-dependent magnetotransport properties of ultra-high-quality epitaxial SrRuO3 films grown under optimized conditions on SrTiO3 substrates. Signatures of Weyl fermion transport, i.e., unsaturated linear positive magnetoresistance accompanied by a quantum oscillation having a π Berry phase, were observed in films with thicknesses as small as 10 nm. Residual resistivity increased with decreasing film thickness, indicating disorder near the interface between SrRuO3 and the SrTiO3 substrate. Since this disorder affects the magnetic and electrical properties of the films, the Curie temperature decreases and the coercive field increases with decreasing thickness. Thickness-dependent magnetotransport measurements revealed that the threshold residual resistivity ratio (RRR) to observe Weyl fermion transport is 21. These results provide guidelines for realizing quantum transport of Weyl fermions in SrRuO3 near heterointerfaces. △ Less

Submitted 6 November, 2020; originally announced November 2020.

Quantum transport evidence of Weyl fermions in an epitaxial ferromagnetic oxide

Authors: Kosuke Takiguchi, Yuki K. Wakabayashi, Hiroshi Irie, Yoshiharu Krockenberger, Takuma Otsuka, Hiroshi Sawada, Sergey A. Nikolaev, Hena Das, Masaaki Tanaka, Yoshitaka Taniyasu, Hideki Yamamoto

Abstract: Magnetic Weyl fermions, which occur in magnets, have novel transport phenomena related to pairs of Weyl nodes, and they are, of both, scientific and technological interest, with the potential for use in high-performance electronics, spintronics and quantum computing. Although magnetic Weyl fermions have been predicted to exist in various oxides, evidence for their existence in oxide materials rema… ▽ More Magnetic Weyl fermions, which occur in magnets, have novel transport phenomena related to pairs of Weyl nodes, and they are, of both, scientific and technological interest, with the potential for use in high-performance electronics, spintronics and quantum computing. Although magnetic Weyl fermions have been predicted to exist in various oxides, evidence for their existence in oxide materials remains elusive. SrRuO3, a 4d ferromagnetic metal often used as an epitaxial conducting layer in oxide heterostructures, provides a promising opportunity to seek for the existence of magnetic Weyl fermions. Advanced oxide thin film preparation techniques, driven by machine learning technologies, may allow access to such topological matter. Here we show direct quantum transport evidence of magnetic Weyl fermions in an epitaxial ferromagnetic oxide SrRuO3: unsaturated linear positive magnetoresistance (MR), chiral-anomaly-induced negative MR, Pi Berry phase accumulated along cyclotron orbits, light cyclotron masses and high quantum mobility of about 10000 cm2/Vs. We employed machine-learning-assisted molecular beam epitaxy (MBE) to synthesize SrRuO3 films whose quality is sufficiently high to probe their intrinsic quantum transport properties. We also clarified the disorder dependence of the transport of the magnetic Weyl fermions, and provided a brand-new diagram for the Weyl transport, which gives a clear guideline for accessing the topologically nontrivial transport phenomena. Our results establish SrRuO3 as a magnetic Weyl semimetal and topological oxide electronics as a new research field. △ Less

Submitted 26 July, 2020; v1 submitted 2 April, 2020; originally announced April 2020.

Characterization of in-gap states in epitaxial CoFe2O4(111) layers grown on Al2O3(111)/Si(111) by resonant inelastic x-ray scattering

Authors: Yuki K. Wakabayashi, Takashi Tokushima, Kentaro Kuga, Hiroshi Yomosa, Masaki Oura, Hidenori Fujiwara, Tetsuya Ishikawa, Masaaki Tanaka, Takayuki Kiss, Ryosho Nakane

Abstract: We have studied in-gap states in epitaxial CoFe2O4(111), which potentially acts as a perfect spin filter, grown on a Al2O3(111)/Si(111) structure by using ellipsometry, Fe L2,3-edge x-ray absorption spectroscopy (XAS), and Fe L2,3-edge resonant inelastic x-ray scattering (RIXS), and revealed the relation between the in-gap states and chemical defects due to the Fe2+ cations at the octahedral sites… ▽ More We have studied in-gap states in epitaxial CoFe2O4(111), which potentially acts as a perfect spin filter, grown on a Al2O3(111)/Si(111) structure by using ellipsometry, Fe L2,3-edge x-ray absorption spectroscopy (XAS), and Fe L2,3-edge resonant inelastic x-ray scattering (RIXS), and revealed the relation between the in-gap states and chemical defects due to the Fe2+ cations at the octahedral sites (Fe2+ (Oh) cations). The ellipsometry measurements showed the indirect band gap of 1.24 eV for the CoFe2O4 layer and the Fe L2,3-edge XAS confirmed the characteristic photon energy for the preferential excitation of the Fe2+ (Oh) cations. In the Fe L3-edge RIXS spectra, a band-gap excitation and an excitation whose energy is smaller than the band-gap energy (Eg = 1.24 eV) of CoF2O4, which we refer to as "below-band-gap excitation (BBGE)" hereafter, were observed. The intensity of the BBGE was strengthened at the preferential excitation energy of the Fe2+ (Oh) cations. In addition, the intensity of the BBGE was significantly increased when the thickness of the CoFe2O4 layer was decreased from 11 to 1.4 nm, which coincides with the increase in the site occupancy of the Fe2+ (Oh) cations with decreasing the thickness. These results indicate that the BBGE comes from the in-gap states of the Fe2+ (Oh) cations whose density increases near the heterointerface on the bottom Al2O3 layer. We have demonstrated that RIXS measurements and analyses in combination with ellipsometry and XAS are effective to provide an insight into in-gap states in thin-film oxide heterostructures. △ Less

Submitted 13 October, 2019; originally announced October 2019.

Machine-learning-assisted thin-film growth: Bayesian optimization in molecular beam epitaxy of SrRuO3 thin films

Authors: Yuki K. Wakabayashi, Takuma Otsuka, Yoshiharu Krockenberger, Hiroshi Sawada, Yoshitaka Taniyasu, Hideki Yamamoto

Abstract: Materials informatics exploiting machine learning techniques, e.g., Bayesian optimization (BO), has the potential to offer high-throughput optimization of thin-film growth conditions through incremental updates of machine learning models in accordance with newly measured data. Here, we demonstrated BO-based molecular beam epitaxy (MBE) of SrRuO3, one of the most-intensively studied materials in th… ▽ More Materials informatics exploiting machine learning techniques, e.g., Bayesian optimization (BO), has the potential to offer high-throughput optimization of thin-film growth conditions through incremental updates of machine learning models in accordance with newly measured data. Here, we demonstrated BO-based molecular beam epitaxy (MBE) of SrRuO3, one of the most-intensively studied materials in the research field of oxide electronics, mainly owing to its unique nature as a ferromagnetic metal. To simplify the intricate search space of entangled growth conditions, we ran the BO for a single condition while kee** the other conditions fixed. As a result, high-crystalline-quality SrRuO3 film exhibiting a high residual resistivity ratio (RRR) of over 50 as well as strong perpendicular magnetic anisotropy was developed in only 24 MBE growth runs in which the Ru flux rate, growth temperature, and O3-nozzle-to-substrate distance were optimized. Our BO-based search method provides an efficient experimental design that is not as dependent on the experience and skills of individual researchers, and it reduces experimental time and cost, which will accelerate materials research. △ Less

Submitted 2 August, 2019; originally announced August 2019.

Magnetization process of the insulating ferromagnetic semiconductor (Al,Fe)Sb

Authors: Shoya Sakamoto, Le Duc Anh, Pham Nam Hai, Yukiharu Takeda, Masaki Kobayashi, Yuki K. Wakabayashi, Yosuke Nonaka, Keisuke Ikeda, Zhendong Chi, Yuxuan Wan, Masahiro Suzuki, Yuji Saitoh, Hiroshi Yamagami, Masaaki Tanaka, Atsushi Fujimori

Abstract: We have studied the magnetization process of the new insulating ferromagnetic semiconductor (Al,Fe)Sb by means of x-ray magnetic circular dichroism. For an optimally doped sample with 10% Fe, a magnetization was found to rapidly increase at low magnetic fields and to saturate at high magnetic fields at room temperature, well above the Curie temperature of 40 K. We attribute this behavior to the ex… ▽ More We have studied the magnetization process of the new insulating ferromagnetic semiconductor (Al,Fe)Sb by means of x-ray magnetic circular dichroism. For an optimally doped sample with 10% Fe, a magnetization was found to rapidly increase at low magnetic fields and to saturate at high magnetic fields at room temperature, well above the Curie temperature of 40 K. We attribute this behavior to the existence of nanoscale Fe-rich ferromagnetic domains acting as superparamagnets. By fitting the magnetization curves using the Langevin function representing superparamagnetism plus the paramagnetic linear function, we estimated the average magnetic moment of the nanoscale ferromagnetic domain to be 300-400 $μ_{B}$, and the fraction of Fe atoms participating in the nano-scale ferromagnetism to be $\sim$50%. Such behavior was also reported for (In,Fe)As:Be and Ge:Fe, and seems to be a universal characteristic of the Fe-doped ferromagnetic semiconductors. Further Fe do** up to 14% led to the weakening of the ferromagnetism probably because antiferromagnetic superexchange interaction between nearest-neighbor Fe-Fe pairs becomes dominant. △ Less

Submitted 11 February, 2019; originally announced February 2019.

Journal ref: Phys. Rev. B 101, 075204 (2020)

Electronic structure of the novel high-$T_{\rm C}$ ferromagnetic semiconductor (Ga,Fe)Sb: x-ray magnetic circular dichroism and resonance photoemission spectroscopy studies

Authors: Shoya Sakamoto, Nguyen Thanh Tu, Yukiharu Takeda, Shin-ichi Fujimori, Pham Nam Hai, Le Duc Anh, Yuki K. Wakabayashi, Goro Shibata, Masafumi Horio, Keisuke Ikeda, Yuji Saitoh, Hiroshi Yamagami, Masaaki Tanaka, Atsushi Fujimori

Abstract: The electronic structure and the magnetism of the novel ferromagnetic semiconductor (Ga,Fe)Sb, whose Curie temperature $T_{\rm C}$ can exceed room temperature, were investigated by means of x-ray absorption spectroscopy (XAS), x-ray magnetic circular dichroism (XMCD), and resonance photoemission spectroscopy (RPES). The line-shape analyses of the XAS and XMCD spectra suggest that the ferromagnetis… ▽ More The electronic structure and the magnetism of the novel ferromagnetic semiconductor (Ga,Fe)Sb, whose Curie temperature $T_{\rm C}$ can exceed room temperature, were investigated by means of x-ray absorption spectroscopy (XAS), x-ray magnetic circular dichroism (XMCD), and resonance photoemission spectroscopy (RPES). The line-shape analyses of the XAS and XMCD spectra suggest that the ferromagnetism is of intrinsic origin. The orbital magnetic moments deduced using XMCD sum rules were found to be large, indicating that there is a considerable amount of 3$d^{6}$ contribution to the ground state of Fe. From RPES, we observed a strong dispersive Auger peak and non-dispersive resonantly enhanced peaks in the valence-band spectra. The latter is a fingerprint of the correlated nature of Fe 3$d$ electrons, whereas the former indicates their itinerant nature. It was also found that the Fe 3$d$ states have finite contribution to the DOS at the Fermi energy. These states presumably consisting of majority-spin $p$-$d$ hybridized states or minority-spin $e$ states would be responsible for the ferromagnetic order in this material. △ Less

Submitted 18 November, 2018; originally announced November 2018.

Journal ref: Phys. Rev. B 100, 035204 (2019)

Local Magnetic States of the Weakly Ferromagnetic Iron-Based Superconductor Sr$_2$VFeAsO$_{3-δ}$ Studied by X-ray Magnetic Circular Dichroism

Authors: Masafumi Horio, Yukiharu Takeda, Hiromasa Namiki, Takao Katagiri, Yuki K. Wakabayashi, Shoya Sakamoto, Yosuke Nonaka, Goro Shibata, Keisuke Ikeda, Yuji Saitoh, Hiroshi Yamagami, Takao Sasagawa, Atsushi Fujimori

Abstract: We have performed x-ray magnetic circular dichroism (XMCD) measurements on the iron-based superconductor Sr$_2$VFeAsO$_{3-δ}$ to study the origin of weak ferromagnetism (WFM) reported for this compound. While Fe 3$d$ electrons show a magnetic response similar to the other iron pnictides, signals from V 3$d$ electrons remain finite at zero magnetic field and may be responsible for the WFM. We have performed x-ray magnetic circular dichroism (XMCD) measurements on the iron-based superconductor Sr$_2$VFeAsO$_{3-δ}$ to study the origin of weak ferromagnetism (WFM) reported for this compound. While Fe 3$d$ electrons show a magnetic response similar to the other iron pnictides, signals from V 3$d$ electrons remain finite at zero magnetic field and may be responsible for the WFM. △ Less

Submitted 5 September, 2018; v1 submitted 16 August, 2018; originally announced August 2018.

Journal ref: J. Phys. Soc. Jpn. 87, 105001 (2018)

Systematic study of the electronic structure and the magnetic properties of a few-nm-thick epitaxial (Ni1-xCox)Fe2O4 (x = 0 - 1) layers grown on Al2O3(111)/Si(111) using soft X-ray magnetic circular dichroism: effects of cation distribution

Authors: Yuki K. Wakabayashi, Yosuke Nonaka, Yukiharu Takeda, Shoya Sakamoto, Keisuke Ikeda, Zhendong Chi, Goro Shibata, Arata Tanaka, Yuji Saitoh, Hiroshi Yamagami, Masaaki Tanaka, Atsushi Fujimori, Ryosho Nakane

Abstract: We study the electronic structure and the magnetic properties of epitaxial (Ni1-xCox)Fe2O4(111) layers (x = 0 - 1) with thicknesses d = 1.7 - 5.2 nm grown on Al2O3(111)/Si(111) structures, to achieve a high value of inversion parameter y, which is the inverse-to-normal spinel-structure ratio, and hence to obtain good magnetic properties even when the thickness is thin enough for electron tunneling… ▽ More We study the electronic structure and the magnetic properties of epitaxial (Ni1-xCox)Fe2O4(111) layers (x = 0 - 1) with thicknesses d = 1.7 - 5.2 nm grown on Al2O3(111)/Si(111) structures, to achieve a high value of inversion parameter y, which is the inverse-to-normal spinel-structure ratio, and hence to obtain good magnetic properties even when the thickness is thin enough for electron tunneling as a spin filter. We revealed the crystallographic (octahedral Oh or tetrahedral Td) sites and the valences of the Fe, Co, and Ni cations using experimental soft X-ray absorption spectroscopy and X-ray magnetic circular dichroism spectra and configuration-interaction cluster-model calculation. In all the (Ni1-xCox)Fe2O4 layers with d = about 4 nm, all Ni cations occupy the Ni2+ (Oh) site, whereas Co cations occupy the three different Co2+ (Oh), Co2+ (Td), and Co3+ (Oh) sites with constant occupancies. According to these features, the occupancy of the Fe3+ (Oh) cations decreases and that of the Fe3+ (Td) cations increases with decreasing x. Consequently, we obtained a systematic increase of y with decreasing x and achieved the highest y value of 0.91 for the NiFe2O4 layer with d = 3.5 nm. From the d dependences of y and magnetization in the d range of 1.7 - 5.2 nm, a magnetically dead layer is present near the NiFe2O4/Al2O3 interface, but its influence on the magnetization was significantly suppressed compared with the case of CoFe2O4 layers reported previously [Y. K. Wakabayasi et al., Phys. Rev. B 96, 104410 (2017)], due to the high site selectivity of the Ni cations. Since our epitaxial NiFe2O4 layer with d = 3.5 nm has a high y values (0.91) and a reasonably large magnetization (180 emu/cc), it is expected to exhibit a strong spin filter effect, which can be used for efficient spin injection into Si. △ Less

Submitted 8 August, 2018; originally announced August 2018.

Comments: arXiv admin note: text overlap with arXiv:1704.01712

Journal ref: Phys. Rev. Materials 2, 104416 (2018)

Ferromagnetism above 1000 K in highly cation-ordered double-perovskite insulator Sr3OsO6

Authors: Yuki K. Wakabayashi, Yoshiharu Krockenberger, Naoto Tsujimoto, Tommy Boykin, Shinji Tsuneyuki, Yoshitaka Taniyasu, Hideki Yamamoto

Abstract: Magnetic insulators have been intensively studied for over 100 years, and they, in particular ferrites, are considered to be the cradle of magnetic exchange interactions in solids. Their wide range of applications include microwave devices and permanent magnets . They are also suitable for spintronic devices owing to their high resistivity, low magnetic dam**, and spin-dependent tunneling probab… ▽ More Magnetic insulators have been intensively studied for over 100 years, and they, in particular ferrites, are considered to be the cradle of magnetic exchange interactions in solids. Their wide range of applications include microwave devices and permanent magnets . They are also suitable for spintronic devices owing to their high resistivity, low magnetic dam**, and spin-dependent tunneling probabilities. The Curie temperature is the crucial factor determining the temperature range in which any ferri/ferromagnetic system remains stable. However, the record Curie temperature has stood for over eight decades in insulators and oxides (943 K for spinel ferrite LiFe5O8). Here we show that a highly B-site ordered double-perovskite, Sr2(SrOs)O6 (Sr3OsO6), surpasses this long standing Curie temperature record by more than 100 K. We revealed this B-site ordering by atomic-resolution scanning transmission electron microscopy. The density functional theory (DFT) calculations suggest that the large spin-orbit coupling (SOC) of Os6+ 5d2 orbitals drives the system toward a Jeff = 3/2 ferromagnetic (FM) insulating state. Moreover, the Sr3OsO6 is the first epitaxially grown osmate, which means it is highly compatible with device fabrication processes and thus promising for spintronic applications. △ Less

Submitted 25 June, 2018; originally announced June 2018.

Impurity band conduction in group-IV ferromagnetic semiconductor Ge1-xFex with nanoscale fluctuations in Fe concentration

Authors: Yoshisuke Ban, Yuki K. Wakabayashi, Ryosho Nakane, Masaaki Tanaka

Abstract: We study the carrier transport and magnetic properties of group-IV-based ferromagnetic semiconductor Ge1-xFex thin films (Fe concentration x = 2.3 - 14 %) with and without boron (B) do**, by measuring their transport characteristics; the temperature dependence of resistivity, hole concentration, mobility, and the relation between the anomalous Hall conductivity versus conductivity. At relatively… ▽ More We study the carrier transport and magnetic properties of group-IV-based ferromagnetic semiconductor Ge1-xFex thin films (Fe concentration x = 2.3 - 14 %) with and without boron (B) do**, by measuring their transport characteristics; the temperature dependence of resistivity, hole concentration, mobility, and the relation between the anomalous Hall conductivity versus conductivity. At relatively low x (= 2.3 %), the transport in the undoped Ge1-xFex film is dominated by hole hop** between Fe-rich hop** sites in the Fe impurity band, whereas that in the B-doped Ge1-xFex film is dominated by the holes in the valence band in the degenerated Fe-poor regions. As x increases (x = 2.3 - 14 %), the transport in the both undoped and B-doped Ge1-xFex films is dominated by hole hop** between the Fe-rich hop** sites of the impurity band. The magnetic properties of the Ge1-xFex films are studied by various methods including magnetic circular dichroism, magnetization and anomalous Hall resistance, and are not influenced by B-do**. We show band profile models of both undoped and B-doped Ge1-xFex films, which can explain the transport and the magnetic properties of the Ge1-xFex films. △ Less

Submitted 16 January, 2018; v1 submitted 14 June, 2017; originally announced June 2017.

Comments: 32 pages, 14 figures

Electronic structure and magnetic properties of magnetically dead layers in epitaxial CoFe2O4/Al2O3/Si(111) films studied by X-ray magnetic circular dichroism

Authors: Yuki K. Wakabayashi, Yosuke Nonaka, Yukiharu Takeda, Shoya Sakamoto, Keisuke Ikeda, Zhendong Chi, Goro Shibata, Arata Tanaka, Yuji Saitoh, Hiroshi Yamagami, Masaaki Tanaka, Atsushi Fujimori, Ryosho Nakane

Abstract: Epitaxial CoFe2O4/Al2O3 bilayers are expected to be highly efficient spin injectors into Si owing to the spin filter effect of CoFe2O4. To exploit the full potential of this system, understanding the microscopic origin of magnetically dead layers at the CoFe2O4/Al2O3 interface is necessary. In this paper, we study the crystallographic and electronic structures and the magnetic properties of CoFe2O… ▽ More Epitaxial CoFe2O4/Al2O3 bilayers are expected to be highly efficient spin injectors into Si owing to the spin filter effect of CoFe2O4. To exploit the full potential of this system, understanding the microscopic origin of magnetically dead layers at the CoFe2O4/Al2O3 interface is necessary. In this paper, we study the crystallographic and electronic structures and the magnetic properties of CoFe2O4(111) layers with various thicknesses (thickness d = 1.4, 2.3, 4, and 11 nm) in the epitaxial CoFe2O4(111)/Al2O3(111)/Si(111) structures using soft X-ray absorption spectroscopy (XAS) and X-ray magnetic circular dichroism (XMCD) combined with cluster-model calculation. The magnetization of CoFe2O4 measured by XMCD gradually decreases with decreasing thickness d and finally a magnetically dead layer is clearly detected at d = 1.4 nm. The magnetically dead layer has frustration of magnetic interactions which is revealed from comparison between the magnetizations at 300 and 6 K. From analysis using configuration-interaction cluster-model calculation, the decrease of d leads to a decrease in the inverse-to-normal spinel structure ratio and also a decrease in the average valence of Fe at the octahedral sites. These results strongly indicate that the magnetically dead layer at the CoFe2O4/Al2O3 interface originates from various complex networks of superexchange interactions through the change in the crystallographic and electronic structures. Furthermore, from comparison of the magnetic properties between d = 1.4 and 2.3 nm, it is found that ferrimagnetic order of the magnetically dead layer at d = 1.4 nm is restored by the additional growth of the 0.9-nm-thick CoFe2O4 layer on it. △ Less

Submitted 6 April, 2017; originally announced April 2017.

Journal ref: Phys. Rev. B 96, 104410 (2017)

Tunneling magnetoresistance in trilayer structures composed of group-IV ferromagnetic semiconductor Ge1-xFex, MgO, and Fe

Authors: Yuki K. Wakabayashi, Kohei Okamoto, Yoshisuke Ban, Shoichi Sato, Masaaki Tanaka, Shinobu Ohya

Abstract: Group-IV-based ferromagnetic semiconductor Ge1-xFex (GeFe) is one of the most promising materials for efficient spin injectors and detectors for Si and Ge. Recent first principles calculations (Sakamoto et al., Ref. 9) suggested that the Fermi level is located in two overlap** largely spin-polarized bands formed in the bandgap of GeFe; spin-down d(e) band and spin-up p-d(t2) band. Thus, it is im… ▽ More Group-IV-based ferromagnetic semiconductor Ge1-xFex (GeFe) is one of the most promising materials for efficient spin injectors and detectors for Si and Ge. Recent first principles calculations (Sakamoto et al., Ref. 9) suggested that the Fermi level is located in two overlap** largely spin-polarized bands formed in the bandgap of GeFe; spin-down d(e) band and spin-up p-d(t2) band. Thus, it is important to clarify how these bands contribute to spin injection and detection. In this study, we show the first successful observation of the tunneling magnetoresistance (TMR) in magnetic tunnel junctions (MTJs) containing a group-IV ferromagnetic semiconductor, that is, in MTJs composed of epitaxially grown Fe/MgO/Ge0.935Fe0.065. We find that the p-d(t2) band in GeFe is mainly responsible for the tunneling transport. Although the obtained TMR ratio is small (0.3%), the TMR ratio is expected to be enhanced by suppressing leak current through amorphous-like crystal domains observed in MgO. △ Less

Submitted 27 July, 2016; originally announced July 2016.

Origin of the large positive magnetoresistance in Ge1-xMnx granular thin films

Authors: Yuki K. Wakabayashi, Ryota Akiyama, Yukiharu Takeda, Masafumi Horio, Goro Shibata, Shoya Sakamoto, Yoshisuke Ban, Yuji Saitoh, Hiroshi Yamagami, Atsushi Fujimori, Masaaki Tanaka, Shinobu Ohya

Abstract: GeMn granular thin films are a unique and promising material for spintronics applications due to large positive magnetoresistance (MR). Previous studies on GeMn have suggested that the large MR is related to nanospinodal decomposition of GeMn into Mn-rich ferromagnetic nanoparticles and Mn-poor paramagnetic matrix. However, its microscopic origin of the MR has not been clarified yet. Here, using X… ▽ More GeMn granular thin films are a unique and promising material for spintronics applications due to large positive magnetoresistance (MR). Previous studies on GeMn have suggested that the large MR is related to nanospinodal decomposition of GeMn into Mn-rich ferromagnetic nanoparticles and Mn-poor paramagnetic matrix. However, its microscopic origin of the MR has not been clarified yet. Here, using X-ray magnetic circular dichroism (XMCD), which is extremely sensitive to the local magnetic state of each atom, we investigate the magnetic properties of the nanoparticles and the matrix in GeMn separately. We find that the MR ratio is proportional to the product of the magnetizations originating from the nanoparticles and the matrix. This result indicates that spin-polarized holes in the nanoparticles penetrate into the matrix and that these holes undergo spin-disorder magnetic scattering by the paramagnetic Mn atoms in the matrix, which induces the large MR. △ Less

Submitted 14 June, 2016; originally announced June 2016.

Journal ref: Physical Review B 95, 014417 (2017)

Electronic Structure of the Ferromagnetic Semiconductor Fe-doped Ge Revealed by Soft X-ray Angle-Resolved Photoemission Spectroscopy

Authors: Shoya Sakamoto, Yuki K. Wakabayashi, Yukiharu Takeda, Shin-ichi Fujimori, Hakuto Suzuki, Yoshisuke Ban, Hiroshi Yamagami, Masaaki Tanaka, Shinobu Ohya, Atsushi Fujimori

Abstract: Ge$_{1-x}$Fe$_{x}$ (Ge:Fe) shows ferromagnetic behavior up to a relatively high temperature of 210 K, and hence is a promising material for spintronic applications compatible with Si technology. We have studied its electronic structure by soft x-ray angle-resolved photoemission spectroscopy (SX-ARPES) measurements in order to elucidate the mechanism of the ferromagnetism. We observed finite Fe 3… ▽ More Ge$_{1-x}$Fe$_{x}$ (Ge:Fe) shows ferromagnetic behavior up to a relatively high temperature of 210 K, and hence is a promising material for spintronic applications compatible with Si technology. We have studied its electronic structure by soft x-ray angle-resolved photoemission spectroscopy (SX-ARPES) measurements in order to elucidate the mechanism of the ferromagnetism. We observed finite Fe 3$d$ components in the states at the Fermi level ($E_{F}$) in a wide region in momentum space and $E_{F}$ was located above the valence-band maximum (VBM). First-principles supercell calculation also suggested that the $E_{F}$ is located above the VBM, within the narrow spin-down $d$($e$) band and within the spin-up impurity band of the deep acceptor-level origin derived from the strong $p$-$d$($t_{2}$) hybridization. We conclude that the narrow $d$($e$) band is responsible for the ferromagnetic coupling between Fe atoms while the acceptor-level-originated band is responsible for the transport properties of Ge:Fe. △ Less

Submitted 17 May, 2016; originally announced May 2016.

Journal ref: Phys. Rev. B 95, 075203 (2017)

Soft X-ray Angle Resolved Photoemission with Micro Positioning Techniques for Metallic V$_2$O$_3$

Authors: H. Fujiwara, T. Kiss, Y. K. Wakabayashi, Y. Nishitani, T. Mori, Y. Nakata, S. Kitayama, K. Fukushima, S. Ikeda, H. Fuchimoto, Y. Minowa, S. -K. Mo, J. D. Denlinger, J. W. Allen, P. Metcalf, M. Imai, K. Yoshimura, S. Suga, T. Muro, A. Sekiyama

Abstract: We have performed soft-X-ray angle resolved photoemission for metallic V$_2$O$_3$. Combining a micro focus beam (40 x 65 $μ$m$^2$) and micro positioning techniques with a long working distance microscope, we have succeeded in observing band dispersions from tiny cleavage surfaces with typical size of the several tens of $μ$m. The photoemission spectra show a clear position dependence reflecting th… ▽ More We have performed soft-X-ray angle resolved photoemission for metallic V$_2$O$_3$. Combining a micro focus beam (40 x 65 $μ$m$^2$) and micro positioning techniques with a long working distance microscope, we have succeeded in observing band dispersions from tiny cleavage surfaces with typical size of the several tens of $μ$m. The photoemission spectra show a clear position dependence reflecting the morphology of the cleaved sample surface. By selecting high quality flat regions on the sample surface, we have succeeded in band map** using both photon-energy and polar-angle dependences, opening the door to three-dimensional ARPES for typical three dimensional correlated materials where large cleavage planes are rarely obtained. △ Less

Submitted 27 March, 2015; v1 submitted 26 March, 2015; originally announced March 2015.

Comments: 5 pages, 4 figures, to be published in Journal of Synchrotron Radiation

Room temperature local ferromagnetism and nanoscale domain growth in the ferromagnetic semiconductor GeFe

Authors: Yuki K. Wakabayashi, Shoya Sakamoto, Yukiharu Takeda, Keisuke Ishigami, Yukio Takahashi, Yuji Saitoh, Hiroshi Yamagami, Atsushi Fujimori, Masaaki Tanaka, Shinobu Ohya

Abstract: We investigate the local electronic structure and magnetic properties of the group IV based ferromagnetic semiconductor, GeFe, using soft X ray magnetic circular dichroism. Our results show that the doped Fe 3d electrons are strongly hybridized with the Ge 4p states, and have an unusually large orbital magnetic moment relative to the spin magnetic moment; i.e., morb/mspin = 0.3. We find that local… ▽ More We investigate the local electronic structure and magnetic properties of the group IV based ferromagnetic semiconductor, GeFe, using soft X ray magnetic circular dichroism. Our results show that the doped Fe 3d electrons are strongly hybridized with the Ge 4p states, and have an unusually large orbital magnetic moment relative to the spin magnetic moment; i.e., morb/mspin = 0.3. We find that local ferromagnetic domains, which are formed through ferromagnetic exchange interactions in the high Fe content regions of the GeFe films, exist at room temperature, well above the Curie temperature. We demonstrate the first observation of the intriguing nanoscale domain growth process in which ferromagnetic domains expand as the temperature decreases, followed by a transition of the entire film into a ferromagnetic state at the Curie temperature. △ Less

Submitted 31 January, 2015; originally announced February 2015.