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A new quasi-one-dimensional transition metal chalcogenide semiconductor (Nb$_4$Se$_{15}$I$_2$)I$_2$
Authors:
Kejian Qu,
Zachary W. Riedel,
Irián Sánchez-Ramírez,
Simon Bettler,
Junseok Oh,
Emily N. Waite,
Nadya Mason,
Peter Abbamonte,
Fernando de Juan Sanz,
Maia G. Vergniory,
Daniel P. Shoemaker
Abstract:
The discovery of new low-dimensional transition metal chalcogenides is contributing to the already prosperous family of these materials. In this study, needle-shaped single crystals of a new quasi-one-dimensional material (Nb$_4$Se$_{15}$I$_2$)I$_2$ were grown by chemical vapor transport, and the structure was solved by single crystal X-ray diffraction (XRD). The new structure has one-dimensional…
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The discovery of new low-dimensional transition metal chalcogenides is contributing to the already prosperous family of these materials. In this study, needle-shaped single crystals of a new quasi-one-dimensional material (Nb$_4$Se$_{15}$I$_2$)I$_2$ were grown by chemical vapor transport, and the structure was solved by single crystal X-ray diffraction (XRD). The new structure has one-dimensional (Nb$_4$Se$_{15}$I$_2$)$_n$ chains along the [101] direction, with two I$^-$ ions per formula unit directly bonded to Nb$^{5+}$. The other two I$^-$ ions are loosely coordinated and intercalate between the chains. Individual chains are chiral, and stack along the $b$ axis in opposing directions, giving space group $P2_1/c$. The phase purity and crystal structure was verified by powder XRD. Density functional theory calculations show (Nb$_4$Se$_{15}$I$_2$)I$_2$ to be a semiconductor with a direct band gap of around 0.6 eV. Resistivity measurements of bulk crystals and micro-patterned devices demonstrate that (Nb$_4$Se$_{15}$I$_2$)I$_2$ has an activation energy of around 0.1 eV, and no anomaly or transition was seen upon cooling. (Nb$_4$Se$_{15}$I$_2$)I$_2$ does not undergo structural phase transformation from room temperature down to 8.2 K, based on cryogenic temperature single crystal XRD. This compound represents a well-characterized and valence-precise member of a diverse family of anisotropic transition metal chalcogenides.
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Submitted 20 October, 2022;
originally announced October 2022.
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Local imaging of diamagnetism in proximity coupled niobium nano-island arrays on gold thin films
Authors:
Logan Bishop-Van Horn,
Irene P. Zhang,
Emily N. Waite,
Ian Mondragon-Shem,
Scott Jensen,
Junseok Oh,
Tom Lippman,
Malcolm Durkin,
Taylor L. Hughes,
Nadya Mason,
Kathryn A. Moler,
Ilya Sochnikov
Abstract:
In this work we study the effect of engineered disorder on the local magnetic response of proximity coupled superconducting island arrays by comparing scanning Superconducting Quantum Interference Device (SQUID) susceptibility measurements to a model in which we treat the system as a network of one-dimensional (1D) superconductor-normal metal-superconductor (SNS) Josephson junctions, each with a J…
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In this work we study the effect of engineered disorder on the local magnetic response of proximity coupled superconducting island arrays by comparing scanning Superconducting Quantum Interference Device (SQUID) susceptibility measurements to a model in which we treat the system as a network of one-dimensional (1D) superconductor-normal metal-superconductor (SNS) Josephson junctions, each with a Josephson coupling energy $E_J$ determined by the junction length or distance between islands. We find that the disordered arrays exhibit a spatially inhomogeneous diamagnetic response which, for low local applied magnetic fields, is well described by this junction network model, and we discuss these results as they relate to inhomogeneous two-dimensional (2D) superconductors. Our model of the static magnetic response of the arrays does not fully capture the onset of nonlinearity and dissipation with increasing applied field, as these effects are associated with vortex motion due to the dynamic nature of the scanning SQUID susceptometry measurement. This work demonstrates a model 2D superconducting system with engineered disorder and highlights the impact of dissipation on the local magnetic properties of 2D superconductors and Josephson junction arrays.
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Submitted 18 August, 2022;
originally announced August 2022.
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Image registration of low signal-to-noise cryo-STEM data
Authors:
Benjamin H. Savitzky,
Ismail El Baggari,
Colin Clement,
Emily Waite,
John P. Sheckelton,
Christopher Pasco,
Alemayehu S. Admasu,
Jaewook Kim,
Sang-Wook Cheong,
Tyrel M. McQueen,
Robert Hovden,
Lena F. Kourkoutis
Abstract:
Combining multiple fast image acquisitions to mitigate scan noise and drift artifacts has proven essential for picometer precision, quantitative analysis of atomic resolution scanning transmission electron microscopy (STEM) data. For very low signal-to-noise ratio (SNR) image stacks - frequently required for undistorted imaging at liquid nitrogen temperatures - image registration is particularly d…
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Combining multiple fast image acquisitions to mitigate scan noise and drift artifacts has proven essential for picometer precision, quantitative analysis of atomic resolution scanning transmission electron microscopy (STEM) data. For very low signal-to-noise ratio (SNR) image stacks - frequently required for undistorted imaging at liquid nitrogen temperatures - image registration is particularly delicate, and standard approaches may either fail, or produce subtly specious reconstructed lattice images. We present an approach which effectively registers and averages image stacks which are challenging due to their low-SNR and propensity for unit cell misalignments. Registering all possible image pairs in a multi-image stack leads to significant information surplus. In combination with a simple physical picture of stage drift, this enables identification of incorrect image registrations, and determination of the optimal image shifts from the complete set of relative shifts. We demonstrate the effectiveness of our approach on experimental, cryogenic STEM datasets, highlighting subtle artifacts endemic to low-SNR lattice images and how they can be avoided. High-SNR average images with information transfer out to 0.72 A are achieved at 300 kV and with the sample cooled to near liquid nitrogen temperature.
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Submitted 23 October, 2017;
originally announced October 2017.
